Title : Study of Single-Stage Bipolar Junction Transistor (BJT)-Based Common Emitter

Amplifier Circuit.

Abstract:
This study investigates the performance characteristics of a single-stage Bipolar Junction
Transistor (BJT)-based common emitter amplifier. The experiment focuses on analyzing the
amplifier's gain, input and output impedance, frequency response, and biasing stability. The
circuit's operation is explored by evaluating the relationship between input and output signals,
along with its amplification factor under varying load conditions. Practical insights into transistor
biasing, stabilization techniques, and the effects of coupling and bypass capacitors are also
gained. The results demonstrate the BJT amplifier's suitability for mid-range frequency
applications, providing a foundation for understanding transistor-based amplification systems.

Objectives:
The objectives of this experiment are to
1. Trace the circuit diagram of a single-stage transistor amplifier.
2. Establish the proper DC operating point (Q-point) of a bipolar transistor-based amplifier
circuit.
3. Measure the Beta (β) of the transistor with a multimeter.
4. Measure the maximum signal that can be amplified with the amplifier without any
distortion.
5. Measure the voltage gain of the amplifier at an input frequency of 1 kHz.
6. Measure the voltage gain of the amplifier at different values of load resistances.

Theory:
The aim of AC analysis in a common emitter (CE) configuration is to determine the Q-point for
undistorted signal amplification. This involves DC analysis to position the Q-point on the transistor's
characteristic curve, followed by calculating small-signal parameters based on the chosen model.
Gain dependency on load resistors is also examined.
In CE amplifiers, biasing ensures proper operation by setting the transistor’s operating point to
handle AC signals with minimal distortion. The single-stage CE amplifier often uses voltage divider
biasing, where the base voltage (VB) is determined using a simple voltage divider formula:

This approach allows the base voltage to be independent of the base current when the divider
current is significantly larger than the base current. Approximate analysis can be performed
assuming

Load Line and Q-Point:

The DC load line illustrates all possible operating points of a transistor, from fully ON
(IC=VCC/(RC+RE)) to fully OFF (IC=0). The Q-point, located on this load line, represents the
values of IC and VCE when no input signal is applied. It is determined as:

The Q-point is independent of β\beta and is ideally positioned at the load line's center for Class A
operation, minimizing distortion

Coupling and Bypass Capacitors:

Coupling capacitors (C1,C2) block DC and pass AC signals, maintaining Q-point stability while
coupling AC between stages. The bypass capacitor (CE) shorts RE for AC signals, maximizing
voltage gain.
Circuit Diagram:

Figure 2: Circuit diagram for the study of CE BJT amplifier circuit

Apparatus:
1. BJT (2N2222, C828, BD135)
2. Resistance (RB,POT = 6.85kohm, RL,POT = 0-100 kohm, RC = 0.461 kohm, RE = 0.548
kohm, RB2 = 3.254 kohm,).
3. Project Board.
4. Oscilloscope and Probes
5. Signal Generator and DC Power Supply
6. Capacitor (10 F and 100 F)
7. Multimeter.
8. Connecting Leads (4).

Experiment:
Simulation Circuit:

Fig 4.2- Data for amplifier circuit against RL=1kohm

 Fig 4.3- Data for amplifier circuit against RL=3.3kohm

Fig 4.4- Data for amplifier circuit against RL=9.5kohm

Fig 4.5- Data for amplifier circuit against RL=20kohm

Fig 4.6- Data for amplifier circuit against RL=46kohm

Fig 4.7- Data for amplifier circuit against RL=90kohm

Experimental & Simulation Results:

Experimental Data:

Table : Measured data of the voltage gain of the amplifier circuit against the load resistances.

𝐆𝐚𝐢𝐧,
Load Resistor, Input voltage, Output Voltage, Gain in dB,
RL (k ) Vi (mV) Vo (V)
1.0 62 2.36 0.038 31.59

3.3 64 3.00 0.046 33.25

5.0 68 3.56 0.053 34.48

9.5 70 4.00 0.057 35.11

20 68 4.20 0.061 35.70

30 66 4.30 0.065 36.25

46 64 4.30 0.067 36.52

76 64 4.30 0.067 36.52

90 64 4.30 0.067 36.52

Simulation Data:

𝐆𝐚𝐢𝐧,
Table : Measured data of the voltage gain of the amplifier circuit against the load resistances.
Gain in dB,
Load Resistor, Input voltage, Output Voltage,
RL (k ) Vi (mV) Vo (V)
1.0 62.5 3.82 0.061 35.70
3.3 62.5 4.87 0.077 37.72
5.0 62.5 5.10 0.081 38.16
9.5 62.5 5.23 0.083 38.38
20 62.5 5.28 0.084 38.48
30 62.5 5.29 0.084 38.48
46 62.5 5.30 0.084 38.48
76 62.5 5.31 0.084 38.48
90 62.5 5.31 0.084 38.48
Answer all the Report Questions:

1. Difference Between Simulated and Measured Values

 The simulated voltage gain (Av) and corresponding dB gain (Av, dB) are consistently
higher than the measured values for all load resistances (RLR_L).
 For example:
o At RL=1.0 kΩ
 Measured Av, dB: 31.59 dB
 Simulated Av, dB: 35.70 dB
 Difference: 35.70−31.59=4.11 dB35.70 - 31.59 = 4.11 \, \text{dB}
 This discrepancy may result from non-idealities in the experimental setup, such as parasitic
resistance, loading effects, or differences in the actual BJT parameters compared to those
used in the simulation.

2. Load Characteristic Curve

Fig 5.1:Experimental load characteristic curve of the Av,dB vs RL

 Fig 5.2:Simulated load characteristic curve of the Av,dB vs RL

 At low RL, the gain increases significantly because the load resistance has a direct impact
on the output voltage.
 For larger RL, the gain stabilizes since the output voltage approaches the maximum swing
allowed by the circuit.

3. Behavior of the CE Amplifier in Different Regions

 Active Region:
o The BJT operates as an amplifier.
o The collector current is controlled by the base-emitter voltage (VBE).
o VCE >VBE The transistor remains "on."
 Saturation Region:
o The transistor acts as a closed switch.
o Both VBE and VCE are low.
o Amplification is not possible in this region.
 Cut-off Region:
o The transistor is "off," with no current flow.
o The output voltage is approximately the supply voltage.

4. Determine BJT Parameters and Comparison

 From the datasheet:
o Parameters such as DC current gain, VBE (base-emitter voltage), and VCE
(collector-emitter saturation voltage) should be noted.
 Compare these parameters to experimental results:
o If DC current gain or other key parameters deviate, this could explain gain
discrepancies.
5. Why is Biasing Necessary?
 Purpose:
o To set the transistor's operating point in the active region.
 Without Biasing:
o The circuit could enter saturation or cut-off, leading to distortion or no signal
amplification.
 Proper biasing ensures stability against temperature and manufacturing variations.

6. Role of Capacitors and Resistors

 Capacitors:
o Coupling capacitors: Block DC and allow AC signal transfer.
o Bypass capacitors: Provide a low-impedance path to ground, stabilizing the
amplifier's gain.
 Resistors:
o Biasing resistors: Establish the operating point.
o Load resistor: Determines the output voltage and influences gain.
 Equations:
o Voltage gain: Av=−gm⋅ RL, where gm is the transconductance.
o Coupling effect:

7. Suggestions

 Improve accuracy by calibrating instruments.

 Use higher tolerance components to minimize discrepancies.
 Repeat measurements under varied environmental conditions to analyze stability.

8. Overall Discussion
 Comparison with Expectations:
o Simulated results match theoretical predictions closely, but experimental results are
lower due to practical limitations.
Discussion:
In this experiment, we studied a single-stage common-emitter (CE) amplifier using a bipolar junction
transistor (BJT). The objective was to analyze the voltage gain under varying load resistances and
compare experimental results with simulation data.
Both experimental and simulation results showed that the voltage gain (A_v) increased with
increasing load resistance (R_L), as expected. A larger load resistance in the collector circuit leads to
higher voltage amplification. The negative sign in the gain formula reflects the 180-degree phase shift
between input and output signals, a characteristic of CE amplifiers.
The experimental data revealed a smaller gain compared to simulation data, likely due to practical
factors such as non-ideal component behavior, measurement errors, and experimental setup
limitations, including parasitic resistances and capacitances. Simulations may also inadequately
account for BJT non-linearities at higher input signals.
Despite these differences, the experimental and simulated results exhibited similar trends, confirming
the experiment's success in demonstrating the principles of BJT-based CE amplifiers.

Conclusion:

The single-stage BJT-based common emitter amplifier effectively amplifies input signals,
demonstrating significant voltage gain and suitable performance for mid-range frequency
applications. The experiment highlights the importance of proper biasing and component
selection to ensure stability and minimize distortions. The findings validate the circuit's utility in
basic amplification tasks and offer a foundational understanding of transistor-based analog
circuits.

References:

[1] Robert L. Boylestad, Louis Nashelsky, Electronic Devices and Circuit Theory, 9th
Edition, 2007-2008
[2] Adel S. Sedra, Kenneth C. Smith, Microelectronic Circuits, Saunders College
Publishing, 3rd ed., ISBN: 0-03- 051648-X, 1991.
[3] American International University–Bangladesh (AIUB) Electronic Devices Lab Manual.
[4] David J. Comer, Donald T. Comer, Fundamentals of Electronic Circuit Design, John
Wiley & Sons Canada, Ltd., ISBN: 0471410160, 2002.
[5] Resistor values: https://www.eleccircuit.com/how-to-basic-use-resistor/, accessed on
2023.