DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BSS87
N-channel enhancement mode
vertical D-MOS transistor
Product specification 2001 May 18
Supersedes data of 1997 June 23
Philips Semiconductors Product specification
N-channel enhancement mode
BSS87
vertical D-MOS transistor
FEATURES PINNING - SOT89
• Direct interface to C-MOS, TTL, etc. PIN DESCRIPTION
• High-speed switching 1 source
• No secondary breakdown 2 drain
• Low RDSon. 3 gate
APPLICATIONS
handbook, halfpage d
• Line current interruptor in telephone sets
• Applications in relay, high-speed and line transformer
drivers. g
1 2 3
DESCRIPTION s
Bottom view MAM355
N-channel enhancement mode vertical D-MOS transistor
in a SOT89 package.
Fig.1 Simplified outline (SOT89) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VDS drain-source voltage (DC) − − 200 V
VGSO gate-source voltage (DC) open drain − − ±20 V
ID drain current (DC) − − 400 mA
Ptot total power dissipation Tamb ≤ 25 °C − − 1 W
RDSon drain-source on-state resistance ID = 400 mA; VGS = 10 V − 1.6 3 Ω
yfs forward transfer admittance ID = 400 mA; VDS = 25 V 140 750 − mS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage (DC) − 200 V
VGSO gate-source voltage (DC) open drain − ±20 V
ID drain current (DC) − 400 mA
IDM peak drain current − 1.6 A
Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 1 W
Tstg storage temperature −55 +150 °C
Tj junction temperature − 150 °C
Note
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum
10 × 10 mm
2001 May 18 2
Philips Semiconductors Product specification
N-channel enhancement mode
BSS87
vertical D-MOS transistor
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 125 K/W
Note
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum
10 × 10 mm
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 200 − − V
IDSS drain-source leakage current VDS = 60 V; VGS = 0 − − 200 nA
VDS = 200 V; VGS = 0 − 0.1 60 µA
IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − ±100 nA
VGSth gate-source threshold voltage ID = 1 mA; VGS = VDS 0.8 − 2.8 V
RDSon drain-source on-state resistance ID = 400 mA; VGS = 10 V − 1.6 3 Ω
Yfs transfer admittance ID = 400 mA; VDS = 25 V 140 750 − mS
Ciss input capacitance VDS = 25 V; VGS = 0; − 100 120 pF
f = 1 MHz
Coss output capacitance VDS = 25 V; VGS = 0; − 20 30 pF
f = 1 MHz
Crss reverse transfer capacitance VDS = 25 V; VGS = 0; − 10 15 pF
f = 1 MHz
Switching times (see Figs 2 and 3)
ton turn-on time ID = 250 mA; VDD = 50 V; − 6 10 ns
VGS = 0 to 10 V
toff turn-off time ID = 250 mA; VDD = 50 V; − 49 60 ns
VGS = 0 to 10 V
2001 May 18 3
Philips Semiconductors Product specification
N-channel enhancement mode
BSS87
vertical D-MOS transistor
handbook, halfpage 90 %
handbook, halfpage VDD = 50 V INPUT
10 %
90 %
10 V OUTPUT
ID
0V
50 Ω 10 %
MSA631 ton toff
MBB692
VDD = 50 V.
Fig.2 Switching times test circuit. Fig.3 Input and output waveforms.
2001 May 18 4
Philips Semiconductors Product specification
N-channel enhancement mode
BSS87
vertical D-MOS transistor
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89
D B
b3
E
HE
L
1 2 3
b2 c
w M b1
e1
0 2 4 mm
scale
DIMENSIONS (mm are the original dimensions)
L
UNIT A b1 b2 b3 c D E e e1 HE w
min.
1.6 0.48 0.53 1.8 0.44 4.6 2.6 4.25
mm 3.0 1.5 0.8 0.13
1.4 0.35 0.40 1.4 0.37 4.4 2.4 3.75
OUTLINE REFERENCES EUROPEAN
ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION
97-02-28
SOT89 TO-243 SC-62
99-09-13
2001 May 18 5
Philips Semiconductors Product specification
N-channel enhancement mode
BSS87
vertical D-MOS transistor
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1) DEFINITIONS
STATUS(2)
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS DISCLAIMERS
Short-form specification The data in a short-form Life support applications These products are not
specification is extracted from a full data sheet with the designed for use in life support appliances, devices, or
same type number and title. For detailed information see systems where malfunction of these products can
the relevant data sheet or data handbook. reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
Limiting values definition Limiting values given are in
for use in such applications do so at their own risk and
accordance with the Absolute Maximum Rating System
agree to fully indemnify Philips Semiconductors for any
(IEC 60134). Stress above one or more of the limiting
damages resulting from such application.
values may cause permanent damage to the device.
These are stress ratings only and operation of the device Right to make changes Philips Semiconductors
at these or at any other conditions above those given in the reserves the right to make changes, without notice, in the
Characteristics sections of the specification is not implied. products, including circuits, standard cells, and/or
Exposure to limiting values for extended periods may software, described or contained herein in order to
affect device reliability. improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
Application information Applications that are
the use of any of these products, conveys no licence or title
described herein for any of these products are for
under any patent, copyright, or mask work right to these
illustrative purposes only. Philips Semiconductors make
products, and makes no representations or warranties that
no representation or warranty that such applications will be
these products are free from patent, copyright, or mask
suitable for the specified use without further testing or
work right infringement, unless otherwise specified.
modification.
2001 May 18 6
Philips Semiconductors Product specification
N-channel enhancement mode
BSS87
vertical D-MOS transistor
NOTES
2001 May 18 7
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Printed in The Netherlands 613510/03/pp8 Date of release: 2001 May 18 Document order number: 9397 750 08278
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