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Chapter03

Chapter 3 discusses various light sources used in optical communications, including semiconductor lasers and LEDs. It covers the principles of operation, such as energy band diagrams, emission processes, and device structures. The chapter also illustrates the performance characteristics and configurations of different laser types, including DFB, DBR, and VCSEL lasers.

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13 views36 pages

Chapter03

Chapter 3 discusses various light sources used in optical communications, including semiconductor lasers and LEDs. It covers the principles of operation, such as energy band diagrams, emission processes, and device structures. The chapter also illustrates the performance characteristics and configurations of different laser types, including DFB, DBR, and VCSEL lasers.

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Chapter 3

LIGHT SOURCES FOR OPTICAL


COMMUNICATIONS

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Fig. 3.1.1. (A) Band diagram of separate n- and p-type semiconductors, (B) energy diagram of a pn junction under equilibrium, and
(C) band diagram of a pn junction with forward bias.

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Fig. 3.1.2. Illustration of direct bandgap (A) and indirect bandgap (B) of semiconductor materials.

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Fig. 3.1.3. Illustration of an energy band in semiconductors and the impact on the spectral width of radiative recombination. (A) Energy
distributions of electrons and holes. (B) Probability distribution of the frequency of emitted photons.

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Fig. 3.1.4. Illustration of spontaneous emission (A) and stimulated emission (B).

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Fig. 3.1.5. Illustration of semiconductor double heterostructure.

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Fig. 3.2.1. Illustration of surface emission (A) and edge emission (B) LEDs.

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Fig. 3.2.2. LED emitting power is linearly proportional to the injection current.

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Fig. 3.2.3. Illustration of LED external efficiency reduction due to total internal reflection.

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Fig. 3.3.1. A laser cavity with facet reflectivity R1 and R2, optical gain g, optical loss α, and refractive index n.

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Fig. 3.3.2. Gain and loss profile. Vertical bars show the wavelengths of longitudinal modes.

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Fig. 3.3.3. Photon density P(J) and carrier density N(J) as functions of injection current density J. Jth is the threshold current density
and Nth is the threshold carrier density.

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Fig. 3.3.4. Illustration of the dimension of a laser cavity.

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Fig. 3.3.5. Direct intensity modulation of a laser diode. TCA: transconductance amplifier.

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Fig. 3.3.6. Illustration of the laser turn-delay. Injection current is turned on at t=0 from JB to J2, but both photon density and carrier density
will require a certain time delay to build up toward their final values.

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Fig. 3.3.7. Illustration of optical power emitted a CW-operated laser diode without (A), and with relative intensity noise (B)

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Fig. 3.3.8. System block diagram to measure laser RIN.

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Fig. 3.3.9. Explanation of a relaxation oscillation process in a semiconductor laser.

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Fig. 3.3.10. Normalized intensity noise spectral density with 10GHz relaxation oscillation frequency.

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Fig. 3.3.11. Optical field vector diagram. Illustration of optical phase noise generated due to spontaneous emission events.

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Fig. 3.4.1. (A) Structure of a DFB laser with a corrugating grating just outside the active layer, and (B) an illustration of two counter-
propagating waves in the cavity (the ordinate represents optical field amplitude).

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Fig. 3.4.2. (A) A Bragg grating with length L, and (B) normalized reflectivity R(f) and transmissivity T(f) of the Bragg grating.

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Fig. 3.4.3. (A) A uniform DFB grating and (B) a DFB grating with a quarter-wave shift in the middle.

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Fig. 3.4.4. (A) Spectrum of a DFB laser with a pair of degenerate modes, and (B) spectrum of a λ/4-shifted DFB laser with a dominant
single mode.

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Fig. 3.4.5. Structure of a DBR laser with an active section A, phase control section P, and Bragg reflector section B. The laser cavity is
formed between the left-end facet with reflectivity R1 and the effective reflection from the Bragg section.

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Fig. 3.4.6. Configuration of an external cavity semiconductor laser, where the external feedback is provided by a reflective grating.

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Fig. 3.4.7. Illustration of resonance losses between R1 and R2 (α2) and between R2 and R3 (α3). α1 is the reflection loss of the grating
and αm is the combined mirror loss. Lasing threshold is reached only by one mode at λL.

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Fig. 3.5.1. (A) Illustration of VCSEL structure, and (B) InP-based VCSEL structure reported in Rodes et al. (2013) operating in 1550nm
wavelength. BTJ, buried-tunnel-junction; BCB, BenzoCycloButhene.

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Fig. 3.5.2. Performance of a 1550nm wavelength VCSEL with D=5μm active area aperture diameter and L=2.5μm vertical cavity length.
(A) P–I curve for device operated at different temperature and the inset shows the emission optical spectrum. Dashed lines show current-
voltage relations. (B) Modulation response as the function of the modulation frequency at different bias currents and at 20°C temperature
(Rodes et al., 2013).

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Fig. 3.5.3. Illustration of coupling light from a VCSEL array to a fiber array (Iga, 2000).

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Fig. 3.5.4. (A) Illustration of a cross section through a single top-emitting VCSEL superimposed to a SEM picture. (1) vertical light
emission, (2) active layer area without current injection, (3) active layer area with current injection, (4) conductive DBRs, (5) metallic ring
contact, and (6) oxide layer. (B) Plan view image of VCSEL array (Moench et al., 2015).

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Fig. 3.6.1. (A) Equivalent electrical circuit of a laser diode and (B) voltage vs current relation of a diode laser with 0.1Ω series resistance.

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Fig. 3.6.2. (A) Illustration of diode laser P–I curve at different junction temperatures and (B) threshold current as a function of junction
temperature.

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Fig. 3.6.3. Example of laser diode-biasing circuit based on a trans-conductive amplifier stage.

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Fig. 3.6.4. (A) Picture of diode laser on heat sink and (B) picture of cylindrical packaged diode laser.

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Fig. 3.6.5. (A) Configuration of a diode laser package used for fiber-optic communication systems, (B) pin assignment of a standard
14-pin butterfly package of a laser diode, (C) bench-top external cavity tunable laser instrument, and (D) integrated tunable laser
assembly (ITLA) for optical communication systems. ((C) Used with permission from Keysight and Santec. (D) Used with permission
from Neophotonics.)

© 2020 Elsevier Inc. All rights reserved. 36

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