bq27546-G1 Single-Cell Li-Ion Battery Fuel Gauge For Battery Pack Integration
bq27546-G1 Single-Cell Li-Ion Battery Fuel Gauge For Battery Pack Integration
bq27546-G1
SLUSC53B – MAY 2015 – REVISED MAY 2018
bq27546-G1 Single-Cell Li-Ion Battery Fuel Gauge for Battery Pack Integration
1 Features 3 Description
1• Battery Fuel Gauge for 1-Series (1sXp) Li-Ion The bq27546-G1 Li-Ion battery fuel gauge is a
Applications up to 14,500-mAh Capacity microcontroller peripheral that provides fuel gauging
for single-cell Li-Ion battery packs. The device
• Microcontroller Peripheral Provides: requires minimal system microcontroller firmware
– Internal or External Temperature Sensor for development for accurate battery fuel gauging. The
Battery Temperature Reporting bq27546-G1 resides within the battery pack or on the
– SHA-1/HMAC Authentication system’s main-board with an embedded battery (non-
removable).
– Lifetime Data Logging
– 64 Bytes of Non-Volatile Scratch Pad FLASH The bq27546-G1 uses the patented Impedance
Track™ algorithm for fuel gauging, and provides
• Battery Fuel Gauging Based on Patented information such as remaining battery capacity
Impedance Track™ Technology (mAh), state-of-charge (%), run-time to empty (min.),
– Models Battery Discharge Curve for Accurate battery voltage (mV), and temperature (°C). It also
Time-To-Empty Predictions provides detections for internal short or tab
disconnection events.
– Automatically Adjusts for Battery Aging,
Battery Self-Discharge, and Temperature/Rate The bq27546-G1 features integrated support for
Inefficiencies secure battery pack authentication, using the SHA-
1/HMAC authentication algorithm.
– Low-Value Sense Resistor (5 mΩ to 20 mΩ)
• Advanced Fuel Gauging Features The device comes in a 15-ball Nano-Free™ DSBGA
package (2.61 mm × 1.96 mm) that is ideal for space-
– Internal Short Detection constrained applications.
– Tab Disconnection Detection
• HDQ and I2C™ Interface Formats for Device Information(1)
Communication with Host System PART NUMBER PACKAGE BODY SIZE (NOM)
• Small 15-Ball Nano-Free™ (DSBGA) Packaging bq27546-G1 YZF (15) 2.61 mm × 1.96 mm
(1) For all available packages, see the orderable addendum at
2 Applications the end of the data sheet.
• Smartphones
• Tablets
• Digital Still and Video Cameras
• Handheld Terminals
• MP3 or Multimedia Players
Simplified Schematic
Single Cell Li -Ion Battery Pack
PACK+ REGIN
VCC
BAT
HDQ HDQ
SDA SDA TS
SCL SCL
SRP
PROTECTION
IC SE
SRN
CE VSS
CHG DSG
PACK– FET
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
bq27546-G1
SLUSC53B – MAY 2015 – REVISED MAY 2018 www.ti.com
Table of Contents
1 Features .................................................................. 1 8 Detailed Description .............................................. 9
2 Applications ........................................................... 1 8.1 Overview ................................................................... 9
3 Description ............................................................. 1 8.2 Functional Block Diagram ....................................... 10
4 Revision History..................................................... 2 8.3 Feature Description................................................. 10
8.4 Device Functional Modes........................................ 15
5 Device Comparison Table..................................... 3
8.5 Programming........................................................... 20
6 Pin Configuration and Functions ......................... 3
8.6 Register Maps ......................................................... 22
7 Specifications......................................................... 4
9 Application and Implementation ........................ 24
7.1 Absolute Maximum Ratings ...................................... 4
9.1 Application Information............................................ 24
7.2 ESD Ratings.............................................................. 4
9.2 Typical Applications ................................................ 25
7.3 Recommended Operating Conditions....................... 4
9.3 Application Curves .................................................. 29
7.4 Thermal Information .................................................. 4
7.5 Supply Current .......................................................... 5 10 Power Supply Recommendations ..................... 29
10.1 Power Supply Decoupling ..................................... 29
7.6 Digital Input and Output DC Characteristics ............. 5
7.7 Power-On Reset........................................................ 5 11 Layout................................................................... 30
7.8 2.5-V LDO Regulator ................................................ 5 11.1 Layout Guidelines ................................................. 30
7.9 Internal Clock Oscillators .......................................... 5 11.2 Layout Example .................................................... 31
7.10 Integrating ADC (Coulomb Counter) 12 Device and Documentation Support ................. 32
Characteristics ........................................................... 6 12.1 Documentation Support ........................................ 32
7.11 ADC (Temperature and Cell Voltage) 12.2 Community Resources.......................................... 32
Characteristics ........................................................... 6 12.3 Trademarks ........................................................... 32
7.12 Data Flash Memory Characteristics........................ 6 12.4 Electrostatic Discharge Caution ............................ 32
7.13 HDQ Communication Timing Characteristics ......... 6 12.5 Glossary ................................................................ 32
7.14 I2C-Compatible Interface Timing Characteristics .... 7 13 Mechanical, Packaging, and Orderable
7.15 Typical Characteristics ............................................ 8 Information ........................................................... 32
4 Revision History
Changes from Revision A (December 2015) to Revision B Page
• Changed the descriptions for the SRP and SRN pins ........................................................................................................... 3
• Changed Pin Configuration and Functions ............................................................................................................................ 3
• Changed Power-On Reset .................................................................................................................................................... 5
• Added "FULLSLEEP mode" to the introduction in Power Modes ....................................................................................... 15
Pin Functions
NUMBER NAME TYPE DESCRIPTION
(1) Analog input pin connected to the internal coulomb counter where SRP is nearest the CELL–
A1 SRP IA
connection. Connect to a 5-mΩ to 20-mΩ sense resistor.
Analog input pin connected to the internal coulomb counter where SRN is nearest the PACK–
B1 SRN IA
connection. Connect to a 5-mΩ to 20-mΩ sense resistor.
C1, C2 VSS P Device ground
C3 SE O Shutdown Enable output. Push-pull output
D1 VCC P Regulator output and processor power. Decouple with a 1.0-µF ceramic capacitor to VSS.
E1 REGIN P Regulator input. Decouple with a 0.1-µF ceramic capacitor to VSS.
A2 HDQ I/O HDQ serial communications line (Slave). Open-drain
B2 TS IA Pack thermistor voltage sense (use 103AT-type thermistor). ADC input
D2 CE I Chip Enable. Internal LDO is disconnected from REGIN when driven low.
Cell-voltage measurement input. ADC input. Recommendation is 4.8 V maximum for conversion
E2 BAT IA
accuracy.
Slave I2C serial communications clock input line for communication with system (Master). Use
A3 SCL I
with a 10-kΩ pull-up resistor (typical).
Slave I2C serial communications data line for communication with system (Master). Open-drain
B3 SDA I/O
I/O. Use with a 10-kΩ pull-up resistor (typical).
NC/GPI
D3, E3 NC Do not connect for proper operation. Reserved for future GPIO.
O
7 Specifications
7.1 Absolute Maximum Ratings
Over-operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VI Regulator input, REGIN –0.3 5.5 V
VCC Supply voltage range –0.3 2.75 V
VIOD Open-drain I/O pins (SDA, SCL, HDQ) –0.3 5.5 V
VBAT BAT input (pin E2) –0.3 5.5 V
VI Input voltage range to all others (pins GPIO, SRP, SRN, TS) –0.3 VCC + 0.3 V
TA Operating free-air temperature range –40 85 °C
TF Functional temperature range –40 100
°C
Tstg Storage temperature range –65 150
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report (SPRA953).
(1) If the clock frequency (fSCL) is > 100 kHz, use 1-byte write commands for proper operation. All other transactions types are supported at
400 kHz. (Refer to I2C Interface.)
1.2V
t(B) t(BR) t(RISE)
(a) Break and Break Recovery (b) HDQ line rise time
t(HW1) t(DW1)
t(HW0) t(DW0)
t(CYCH) t(CYCD)
1-bit
Break 7-bit address 8-bit data
R/W
t(RSPS)
(e) Gauge to Host Response
SCL
SDA
td(STA) tf tsu(STOP)
tr
th(DAT) tsu(DAT)
2.65 8.8
VREGIN = 2.7 V
2.5 8.4
8.3
2.45
8.2
2.4
8.1
2.35 8
-40 -20 0 20 40 60 80 -40 -20 0 20 40 60 80 100
Temperature (°C) Temperature (qC) D002
D001
Figure 3. Regulator Output Voltage Vs. Temperature Figure 4. High-Frequency Oscillator Frequency Vs.
Temperature
34 5
fLOSC - Low Frequency Oscillator (kHz)
33.5 4
Reported Temperature Error (qC)
3
33
2
32.5 1
32 0
31.5 -1
-2
31
-3
30.5 -4
30 -5
-40 -20 0 20 40 60 80 100 -30 -20 -10 0 10 20 30 40 50 60
Temperature (qC) D003
Temperature (qC) D004
Figure 5. Low-Frequency Oscillator Frequency Vs. Figure 6. Reported Internal Temperature Measurement Vs.
Temperature Temperature
8 Detailed Description
8.1 Overview
The bq27546-G1 accurately predicts the battery capacity and other operational characteristics of a single Li-
based rechargeable cell. It can be interrogated by a system processor to provide cell information, such as state-
of-charge (SOC) and time-to-empty (TTE).
Information is accessed through a series of commands, called Standard Commands. Further capabilities are
provided by the additional Extended Commands set. Both sets of commands, indicated by the general format
Command(), are used to read and write information contained within the bq27546-G1 control and status
registers, as well as its data flash locations. Commands are sent from the system to gauge using the bq27546-
G1 serial communications engine, and can be executed during application development, pack manufacture, or
end-equipment operation.
Cell information is stored in the bq27546-G1 in non-volatile flash memory. Many of these data flash locations are
accessible during application development. They cannot, generally, be accessed directly during end-equipment
operation. To access to these locations, use the bq27546-G1 companion evaluation software, individual
commands, or a sequence of data-flash-access commands. To access a desired data flash location, the correct
data flash Subclass and offset must be known. For detailed data flash information, see the bq27546-G1
Technical Reference Manual (SLUUB74).
The bq27546-G1 provides 64 bytes of user-programmable data flash memory, partitioned into two (2) 32-byte
blocks: Manufacturer Info Block A and Manufacturer Info Block B. This data space is accessed through a
data flash interface. For specifics on accessing the data flash, see section Manufacturer Information Blocks in the
bq27546-G1 Technical Reference Manual (SLUUB74).
The key to the bq27546-G1 high-accuracy gas gauging prediction is the Texas Instruments proprietary
Impedance Track™ algorithm. This algorithm uses cell measurements, characteristics, and properties to create
state-of-charge predictions that can achieve less than 1% error across a wide variety of operating conditions and
over the lifetime of the battery.
The bq27546-G1 measures charge/discharge activity by monitoring the voltage across a small-value series
sense resistor (5 mΩ to 20 mΩ typ.) located between the CELL– and the battery’s PACK– terminal. When a cell
is attached to the bq27546-G1, cell impedance is learned based on cell current, cell open-circuit voltage (OCV),
and cell voltage under loading conditions.
The bq27546-G1 external temperature sensing is optimized with the use of a high accuracy negative
temperature coefficient (NTC) thermistor with R25 = 10 kΩ ± 1% and B25/85 = 3435K ± 1% (such as Semitec
103AT) for measurement. The bq27546-G1 can also be configured to use its internal temperature sensor. The
bq27546-G1 uses temperature to monitor the battery-pack environment, which is used for fuel gauging and cell
protection functionality.
To minimize power consumption, the bq27546-G1 has different power modes: NORMAL, SLEEP, FULLSLEEP,
and HIBERNATE. The bq27546-G1 passes automatically between these modes, depending upon the occurrence
of specific events, though a system processor can initiate some of these modes directly. More details can be
found in Power Modes.
NOTE
Divider BAT
CE
2.5-V LDO Oscillator
REG25 + System Clock ADC TS
Power Mgt
VCC Temp
Sensor
HDQ
Communications SRP
SCL Coulomb
-
HDQ/I2C Impedance
Counter
SDA Track
Engine SRN
Peripherals SE
VSS
(1) The actual resistance value vs. the sense resistor setting is not important; however, the actual voltage
threshold when calculating the configuration is important. The voltage thresholds are typical values
under room temperature.
8.3.3.3 Flash Updates
Data flash can only be updated if Voltage() ≥ Flash Update OK Voltage. Flash programming current can cause
an increase in LDO dropout. The value of Flash Update OK Voltage should be selected such that the bq27546-
G1 VCC voltage does not fall below its minimum of 2.4 V during flash write operations.
8.3.4 Autocalibration
The bq27546-G1 device provides an autocalibration feature that measures the voltage offset error across SRP
and SRN from time-to-time as operating conditions change. It subtracts the resulting offset error from normal
sense resistor voltage, VSR, for maximum measurement accuracy.
Autocalibration of the ADC begins on entry to SLEEP mode, except if Temperature() is ≤ 5°C or Temperature() ≥
45°C.
The fuel gauge also performs a single offset calibration when (1) the condition of AverageCurrent() ≤ 100 mA
and (2) {voltage change since the last offset calibration ≥ 256 mV} or {temperature change since last offset
calibration is greater than 8°C for ≥ 60 seconds}.
Capacity and current measurements will continue at the last measured rate during the offset calibration when
these measurements cannot be performed. If the battery voltage drops more than 32 mV during the offset
calibration, the load current has likely increased considerably; therefore, the offset calibration will be stopped.
8.3.5 Communications
8.3.5.1 Authentication
The bq27546-G1 device can act as a SHA-1/HMAC authentication slave by using its internal engine. Sending a
160-bit SHA-1 challenge message to the bq27546-G1 fuel gauge causes the gauge to return a 160-bit digest,
based upon the challenge message and a hidden, 128-bit plain-text authentication key. If this digest matches an
identical one generated by a host or dedicated authentication master, and when operating on the same challenge
message and using the same plain text keys, the authentication process is successful.
HDQ serial communication is normally initiated by the host processor sending a break command to the bq27546-
G1 device. A break is detected when the DATA pin is driven to a logic-low state for a time t(B) or greater. The
DATA pin should then be returned to its normal ready high logic state for a time t(BR). The bq27546-G1 fuel
gauge is now ready to receive information from the host processor.
The bq27546-G1 device is shipped in I2C mode. TI provides tools to enable the HDQ peripheral. The HDQ
Communication Basics Application Report (SLUA408A) provides details of HDQ communication.
8.3.5.6.2 Temperature
This feature triggers an interrupt based on the OTC (Overtemperature in Charge) or OTD (Overtemperature in
Discharge) condition being met. It uses the same data flash entries as OTC or OTD and triggers interrupts as
long as either the OTD or OTC condition is met and HDQIntEN = 1.
Figure 7. Supported I2C formats: (a) 1-byte write, (b) quick read, (c) 1 byte-read, and (d) incremental read
(S = Start, Sr = Repeated Start, A = Acknowledge, N = No Acknowledge, and P = Stop).
The quick read returns data at the address indicated by the address pointer. The address pointer, a register
internal to the I2C communication engine, increments whenever data is acknowledged by the bq27546-G1 or the
I2C master. Quick writes function in the same manner and are a convenient means of sending multiple bytes to
consecutive command locations (such as two-byte commands that require two bytes of data).
S ADDR[6:0] 0 A CMD[7:0] N P
The I2C engine releases both SDA and SCL if the I2C bus is held low for t(BUSERR). If the fuel gauge was holding
the lines, releasing them frees the master to drive the lines. If an external condition is holding either of the lines
low, the I2C engine enters the low-power SLEEP mode.
POR
Entry to SLEEP
Pack Configuration [SLEEP] = 1
AND
SLEEP
| AverageCurrent( ) |≤ Sleep Current
Fuel gauging and data
HIBERNATE updated every 20 seconds
Wakeup From HIBERNATE
Communication Activity
AND
Disable all device Comm address is NOT for the device
subcircuits except GPIO. Entry to WAITFULLSLEEP
Entry to FULLSLEEP If Full Sleep Wait Time > 0, Exit From WAITFULLSLEEP
Guage ignores Control Status Any Communication Cmd
If Full Sleep Wait Time = 0, [FULLSLEEP]
Host must set Control Status
[FULLSLEEP]=1
Exit From WAIT_HIBERNATE
WAITFULLSLEEP
Host must set Control Status
[HIBERNATE] = 0
AND FULLSLEEP Count Down
VCELL > Hibernate Voltage
Exit From
Entry to FULLSLEEP FULLSLEEP
Exit From WAIT_HIBERNATE Count <1 Any
Cell relaxed Communication
AND WAIT_HIBERNATE Cmd
| AverageCurrent() | < Hibernate
Current FULLSLEEP
OR
Fuel gauging and data In low power state of SLEEP
Cell relaxed Exit From SLEEP mode. Gas gauging and data
AND updated every 20 seconds (Host has set Control Status
VCELL < Hibernate Voltage [HIBERNATE] = 1 updated every 20 seconds
OR
VCELL < Hibernate Voltage
(1) The [SE_EN] bit in Pack Configuration can be enabled to use the [SE] and [SHUTDWN] bits in the
CONTROL_STATUS() function. The SE pin shutdown function is disabled.
(2) The HDQ pin is used for communication and the HDQ Host Interrupt Feature is available.
8.4.2.1 SHUTDOWN Mode
In SHUTDOWN mode, the SE pin is used to signal the external circuit to power-off the fuel gauge. This feature is
useful to shut down the fuel gauge in a deeply discharged battery to protect the battery. By default, SHUTDOWN
mode is in NORMAL state. By sending the SET_SHUTDOWN subcommand or setting the [SE_EN] bit in the
Pack Configuration register, the [SHUTDWN] bit is set and enables the shutdown feature. When this feature is
enabled and [INTSEL] is set, the SE pin can be in NORMAL state or SHUTDOWN state. The SHUTDOWN state
can be entered in HIBERNATE mode (only if HIBERNATE mode is enabled due to low cell voltage). All other
power modes will default the SE pin to NORMAL state. Table 3 shows the SE pin state in NORMAL or
SHUTDOWN mode. The CLEAR_SHUTDOWN subcommand or clearing [SE_EN] bit in the Pack Configuration
register can be used to disable SHUTDOWN mode.
The SE pin will be high impedance at power-on reset (POR), and the [SE_POL] does not affect the state of SE
pin at POR. Also, [SE_PU] configuration changes will only take effect after POR. In addition, the [INTSEL] only
controls the behavior of the SE pin; it does not affect the function of [SE] and [SHUTDWN] bits.
NOTE
To avoid conflict, the keys must be different from the codes presented in the CNTL DATA
column of Table 8 subcommands.
When in SEALED mode the [SS] bit of CONTROL_STATUS is set, but when the UNSEAL keys are correctly
received by the bq27546-G1, the [SS] bit is cleared. When the full-access keys are correctly received the
CONTROL_STATUS [FAS] bit is cleared.
Both Unseal Key and Full-Access Key have two words and are stored in data flash. The first word is Key 0 and
the second word is Key 1. The order of the keys sent to bq27546-G1 are Key 1 followed by Key 0. The order of
the bytes for each key entered through the Control() command is the reverse of what is read from the part. For
an example, if the Unseal Key is 0x56781234, key 1 is 0x1234 and key 0 is 0x5678. Then Control() should
supply 0x3412 and 0x7856 to unseal the part. The Unseal Key and the Full-Access Key can only be updated
when in FULL ACCESS mode.
8.5 Programming
8.5.1 Standard Data Commands
The bq27546-G1 uses a series of 2-byte standard commands to enable system reading and writing of battery
information. Each standard command has an associated command-code pair, as indicated in Table 7. Each
protocol has specific means to access the data at each Command Code. DataRAM is updated and read by the
gauge only once per second. Standard commands are accessible in NORMAL operation mode.
RESCAP = No-load rate of compensation is applied to the reserve capacity calculation. True when set.
CALEN = Calibration mode is enabled.
INTPOL = Polarity for Interrupt pin. (See INTERRUPT Mode.)
INTSEL = Interrupt Pin select: 0 = SE pin, 1 = HDQ pin. (See INTERRUPT Mode.)
RSVD = Reserved. Must be 0.
IWAKE/RSNS1/RSNS0 = These bits configure the current wake function (see Wake-Up Comparator).
GNDSEL = The ADC ground select control. The VSS (pins C1, C2) is selected as ground reference when the bit is clear.
Pin A1 is selected when the bit is set.
RFACTSTEP = Enables Ra step up/down to Max/Min Res Factor before disabling Ra updates.
SLEEP = The fuel gauge can enter sleep, if operating conditions allow. True when set. (See SLEEP Mode.)
RMFCC = RM is updated with the value from FCC, on valid charge termination. True when set.
SE_PU = Pull-up enable for SE pin. True when set (push-pull).
SE_POL = Polarity bit for SE pin. SE is active high when set (makes SE high when gauge is ready for shutdown).
SE_EN = Indicates if set the shutdown feature is enabled. True when set.
TEMPS = Selects external thermistor for Temperature() measurements. True when set.
ChgDoDEoC = Enable DoD at EoC recalculation during charging only. True when set. The default setting is recommended.
SE_TDD = Enable Tab Disconnection Detection. True when set.
VconsEN = Enable voltage consistency check. True when set. The default setting is recommended.
SE_ISD = Enable Internal Short Detection. True when set.
RSVD = Reserved. Must be 0.
LFPRelax = Enable LiFePO4 long relaxation mode. True when set.
Enable DoD weighting feature of gauging algorithm. This feature can improve accuracy during relaxation in a
DoDWT =
flat portion of the voltage profile, especially when using LiFePO4 chemistry. True when set.
FConvEn = Enable fast convergence algorithm. The default setting is recommended.
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
D1
VCC
TS VCC
E3
NC/GPIO
E2 SRP A1 J7 J9
BAT 1 1
E1 HDQ A2
REGIN 2 2 TP9
D3 SCL A3
NC/GPIO PACK+
D2 SRN B1 R14 R15
R7, R8, and R9 are optional pull-down resistors if pull-up resistors are applied.
CE
C1 C2
VCC D1 TS B2 10 k
VCC 10 k
0.1 µF
VSS R4 100 R8 100 3
C6
SE SDA
100 100 2 SCL 2 PACK+/Load+
Place C1 close to BAT pin
Vin Max: 4.2 V Place C2 close to REGIN pin C3 TP5 AZ23C5V6-7 1 VSS
1 PACK–/Load–
Current Max: 3 A
1 µF D2 J10 TB2
0.1 µF
0.1 µF
TP2
C5
C7
CELL +
TB1 TP10
Place R1, R3, C5, C6, C7 PACK–
1 R1 R3
CELL + J3 Close to GG
2 ON
1
CELL –
2 100 100
CE
3 OFF
TP1
TP6
CELL –
Low-pass filter for coulomb counter input should be placed
as close as possible to gas gauge IC. Connection to sense
resistor must be of Kelvin connection type.
TP5
R2 Q1:A Q1:B
0.01
SI6926DQ SI6926DQ
C14 C15
0.1 µF 0.1 µF
www.ti.com
bq27546-G1
SLUSC53B – MAY 2015 – REVISED MAY 2018 www.ti.com
2.65 8.8
VREGIN = 2.7 V
2.5 8.4
8.3
2.45
8.2
2.4
8.1
2.35 8
-40 -20 0 20 40 60 80 -40 -20 0 20 40 60 80 100
Temperature (°C) Temperature (qC) D002
D001
Figure 11. Regulator Output Voltage Vs. Temperature Figure 12. High-Frequency Oscillator Frequency Vs.
Temperature
34 5
fLOSC - Low Frequency Oscillator (kHz)
33.5 4
Reported Temperature Error (qC)
3
33
2
32.5 1
32 0
31.5 -1
-2
31
-3
30.5 -4
30 -5
-40 -20 0 20 40 60 80 100 -30 -20 -10 0 10 20 30 40 50 60
Temperature (qC) D003
Temperature (qC) D004
Figure 13. Low-Frequency Oscillator Frequency Vs. Figure 14. Reported Internal Temperature Measurement
Temperature Vs. Temperature
11 Layout
NOTE
For best possible noise performance, it is important to separate the low-current and high-
current loops to different areas of the board layout.
The fuel gauge and all support components should be situated on one side of the boards and tap off of the high-
current loop (for measurement purposes) at the sense resistor. Routing the low-current ground around instead of
under high-current traces will further help to improve noise rejection.
SCL
Use copper R7 R10
pours for battery
power path to
minimize IR SDA
losses R4 R8
SE
C1
R THERM
Kelvin connect the
BAT sense line
right at positive C2
REGIN
battery terminal
BAT
NC
C3
CE
NC
Vcc
VSS
VSS
SE
HDQ
SDA TS SRN
R6 R9
HDQ
SRP
SCL
PACK –
10 mΩ 1%
12.3 Trademarks
Impedance Track, Nano-Free, E2E are trademarks of Texas Instruments.
I2C is a trademark of NXP Semiconductors, N.V.
All other trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
www.ti.com 10-Dec-2020
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)
BQ27546YZFR-G1 ACTIVE DSBGA YZF 15 3000 RoHS & Green SNAGCU Level-1-260C-UNLIM -40 to 85 BQ27546
BQ27546YZFT-G1 ACTIVE DSBGA YZF 15 250 RoHS & Green SNAGCU Level-1-260C-UNLIM -40 to 85 BQ27546
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
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In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 10-Dec-2020
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 9-Nov-2024
B0 W
Reel
Diameter
Cavity A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
W Overall width of the carrier tape
P1 Pitch between successive cavity centers
Sprocket Holes
Q1 Q2 Q1 Q2
Pocket Quadrants
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 9-Nov-2024
Width (mm)
H
W
Pack Materials-Page 2
PACKAGE OUTLINE
YZF0015 SCALE 6.500
DSBGA - 0.625 mm max height
DIE SIZE BALL GRID ARRAY
B E A
BALL A1
CORNER
C
0.625 MAX
SEATING PLANE
0.35
BALL TYP 0.05 C
0.15
1 TYP
SYMM
2 SYMM
TYP C
D: Max = 2.64 mm, Min = 2.58 mm
B E: Max = 1.986 mm, Min =1.926 mm
0.5
TYP
A
1 2 3
0.35
15X
0.25
0.015 C A B 0.5 TYP
4219381/A 02/2017
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
TM
3. NanoFree package configuration.
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EXAMPLE BOARD LAYOUT
YZF0015 DSBGA - 0.625 mm max height
DIE SIZE BALL GRID ARRAY
(0.5) TYP
15X ( 0.245)
1 2 3
A
(0.5) TYP
SYMM
C
SYMM
4219381/A 02/2017
NOTES: (continued)
4. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints.
For more information, see Texas Instruments literature number SNVA009 (www.ti.com/lit/snva009).
www.ti.com
EXAMPLE STENCIL DESIGN
YZF0015 DSBGA - 0.625 mm max height
DIE SIZE BALL GRID ARRAY
(0.5) TYP
1 2 3
(0.5)
TYP
B
METAL
TYP
C SYMM
SYMM
4219381/A 02/2017
NOTES: (continued)
5. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.
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