Physics


CBSE QUESTION PAPER-2023-24 (55/3/1)
SUBJECT: PHYSICS (SOLUTIONS)
SECTION-A
1. (B) Spherical surface
2. (B) 1.6 × 10–18 J
 = U = Uf – Ui
= q(Vf – Vi)
= 1.6 × 10–19 [5 – (–5)]
= 1.6 × 10–18 J
y
3. (C) (– 0.24 nT kˆ )
(3,4,0
 Id sin 
dB  0 5.0A Q
4r 2
x
3 O
4   10 7  5  2  10 2  P
 5 z
4  (5)2

3
= 0.24 × 10–9 = 0.24 nT   k̂  sin  
5
4. (D) remain stationary
5. (B) 0.3 MB
 = MB(cos1 – cos2)
= MB(cos0° – cos45°)
 1 
 MB  1   = MB(1–0.707) = 0.3 MB
 2
6. (C) [15.0 V]
Ldi
e
dt
4
= 15  10 3 
0.004
= 15 × 10–3 × 103 = 15V
7. (B) l is decreased and A is increased
0 N2 A
L

8. (B) Gamma rays

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9. (B) 2
1 1 e(ze)
m p V2  …(1)
2 4  0 rp

1 1 (2e) (ze)
(4m p )V2  …(2)
2 40 r

(1) 1 r rp
  2  2
(2) 4 2rp r

Km

10. (C)

11. (B) decreases by 87.5%

2 r  r  n 2
T v  1
v  n

T  n3

T1 8
  T1 = 8T2
T2 1

T1 7
T  T1   T1
8 8

7 T1
 100
8 T1

700
  87.5% decreases
8

12. (B) 0.05 eV

13. (D)
14. (C)
15. (A)
16. (A)

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SECTION-B
17. (a) Relaxation time () : The average time taken by an electron between two successive
collisions is the relaxation time.
total time between two collisions for all the free electrons
 , ( 10–14s in metals)
number of free electrons
I neAVd  e 
J   neVd  Vd  E 
A A  m 
ne 
2
J E
m
1
J   E

m
so 
ne 2 
m
R  2
A ne A
OR
(b) Let the current in galvanometer be Ig and resistance of galvanometer is Rg.

(I
(I11–I–Ig)g)
RR1 1 RR2
I1 IIgg 2
A C
RRgg G
 K
K22
R R4
((I 2+I
I2 + Ig ) g)
I D I

+ –
K
K11
E
Apply Kirchhoff's voltage law in loop ABDA-
– I1R1 – IgRg + I2R3 = 0 ....(1)
Apply KVL in loop BCDB -
– (I1 – Ig)R2 + (I2 + Ig)R4 + IgRg = 0 ....(2)
In balanced Wheat Stone Bridge (Ig = 0)
From eq. (1) & (2)
I1R1 = I2 R3 ....(3)
I1R2 = I2R4 ....(4)
eq. (3)  (4)
R1 R 3
 This is the condition of balanced Wheat Stone Bridge. [3]
R2 R4

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18. M = 24
f0 + fe = 150 …(1)
f0
M  24
fe
f0
fe 
24
Put the value in equation (1)
f
f0  0  150
24
25f0
 150  f0 = 144 cm
24
19. (a) For a simple microscope, the angular size of the object equals the angular size of the image.
Yet it offers magnification because we can keep the small object much closer to the eye
than 25 cm and hence have it subtend a large angle. The image is at 25 cm which we can
see. Without the microscope, you would need to keep the small object at 25 cm which
would subtend a very small angle.
(b) Yes
Plane and convex mirrors can produce real images as well. If the object is virtual, i.e., if the
light rays convergoing at a point behind a plane mirror (or a convex mirror) are reflected to
a point on a screen placed in front of the mirror, then a real image will be formed.
20. I = 0.1 × 10–9 watt/m2
P
I , where P = radiation power
A
nhc
PIA
t
n IA 0.1  10 9  0.4  10 14  500  10 9
 
t hc 6.6  10 34  3  108
 104 photon/sec
21. 1 atom of Si doped out of 106 atoms (1 ppm of B)
5  10 28
In 5 × 1028 atoms net doped = 6
= 5 × 1022 atoms
10
1 B atoms creates 1 Hole excen
so, no. of excen Hole = 5 × 1022 = nh
also, nenh = ni2
 ne– = (1.5 × 1016)2 /5 × 1022 = 4.5 × 109
 No. of e– formed = 4.5 × 109.
as nh > ne → It is a P - type semiconductor formed.
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SECTION-C
22. Each branch of the network is assigned an unknown current to be determined by the application
of Kirchhoff’s rules. To reduce the number of unknowns at the outset, the first rule of Kirchhoff
is used at every junction to assign the unknown current in each branch.
We then have three unknowns I1, I2 and I3 which can be found by applying the second rule of
Kirchhoff to three different closed loops.
Kirchhoff’s second rule for the closed loop ADCA gives,
10 – 4(I1– I2) + 2(I2 + I3 – I1) – I1 = 0 ...(i)
that is, 7I1– 6I2 – 2I3 = 10
For the closed loop ABCA, we get
10 – 4I2– 2 (I2 + I3) – I1 = 0
that is, I1 + 6I2 + 2I3 =10 ...(ii)
For the closed loop BCDEB, we get
5 – 2 (I2 + I3 ) – 2 (I2 + I3 – I1) = 0
that is, 2I1 – 4I2 – 4I3 = –5 ...(iii)
Equations (i, ii and iii) are three simultaneous equations in three
unknowns. These can be solved by the usual method to give
5 7
I1 = 2.5A, I 2  A , I 3  1 A
8 8
The currents in the various branches of the network are
5 1 7
AB : A, CA : 2 A, DEB : 1 A
8 2 8
7 1
AD :  1 A , CD : OA, BC :  2 A
8 2
23. Bio–Savart's law explain that a current–carrying conductor produce a magnetic field around it
and Lorentz said that an external magnetic field exerts a force on a current–carrying conductor
Thus, from the two studies, we can say that any two current carrying conductors when placed
near each other, will exert a magnetic force on each other.
Force acting on length of wire (1) due to magnetic field generated by wire (2)

(1) (2)

B2 B1

I1 I2
F12 F21

Repulsion
d

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
F12 = I1  B2 sin 90° B1 = magnetic field of wire (1)

 I 
F12 = I1   0 2  B2 = magnetic field of wire (2)
 2 d 

 F
Force acting on unit length of wire (1) f  
 
F12 0 I1I 2

2d
0 I1I 2
 f12  ...(1)
2d

Force on length of wire (2) due to magnetic field generated by wire (1)

 I 
F21 = I2 B1 sin 90° or F21 = I2  0 1 
 2d 

Force on unit length of wire (2)

F21 0 I1I 2
or 
2d
0 I1I 2
 f21  ...(2)
2d
It is clear from equation (1) & (2) that force acting per unit length on each wire will be same.
Current flows in opposite direction then force is of repulsion.
24. (a) X  capacitor
1
(b) XC 
C

XC

(c)


(d) (i) In an ac circuit a capacitor acts like a resistor that depends on the frequency of the ac
source
(ii) In a dc circuit a capacitor behaves an infinite resistance [like open circuit] when it is
fully charged or discharged

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25. E  (6.3 N / C) [cos(1.5rad / m)y  (4.5 10 8 red / s)t] ˆi
The general equation for the electric field vector .....(1)
E = E0cos (ky + t) i .....(2)
on comparing equation (1) & (2)
2
wave no. k 

2 6.28
(a) 1.5     4.18 m
 1.5
(b) E 0 = B0 C
E0 6.3
B0   8
= 2.1 × 10–8 T
C 3  10
(C) B = 2.1 × 10–8 [cos(1.5 rad/m)y + (4.5 ×108 rad/s)t] i
26. Bohr's first postulate : An electron in an atom can revolve in certain stable orbits without the
emission of radiant energy. The neccessary centripetal force for circular motion is provided by
electrostatic force of attraction between the nucleus and electron.
Bohr's second postulate : The electron revolves around the nucleus only in those orbits for
h
which the angular momentum is equal to an integral multiple of where h = plank's constant
2
or angular momentum of revolving e– is quantized.
From Bohr's second postulate
nh
mv n rn 
2
nh
vn  ....(1)
2mrn

For Radius :
Coulomb force : The electrostatic attraction force which is acting between electron and nucleus
is called coulamb force. According to this -
kZe 2  kq1q 2
Fe   Fe  2
rn2  r
mv 2n
Centripetal force 
rn

mv 2n
In equilibrium 
rn

kZe 2
v 2n  ……(2)
mrn
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
From equation (1) and (2)
n2h2 kZe 2

4 2 m 2 rn2 mrn

 h2  n2
rn   2 2  ……(3)
 4  e km  Z

Put the value , k, h, m, e

n2
rn  0.529 10 8  cm
Z

n2
rn  0.529  Å
z
27. (a) The atomic unit (amu) is defined as 1/12th of the mass of an atom of carbon.
1 a.m.u. = 1.67 × 10–24g = 1.67 × 10–27 kg
(b) Atomic mass M(H) of hydrogen and nuclear mass (mn) are
m(H) = 1.007825u and Mn = 1.008665u
mass defect m = [M(H) + Mn – M(D)]
2.016490u – 2.014102u
m = 0.002388u
As 1u correspond to 931.49 MeV energy therefore mass defect corresponds to energy
Eb = 0.002388 × 931.49
= 2.224MeV
28. (a) Forward Bias : In forward bias setup the p-side of the diode is attached to the positivity
terminal and n-side is fixed to the negative terminal of the battery.
Forward biasing characteristics curve : When applied voltage is low, the current through
the diode is almost zero. It is because of the potential barrier, which opposes the applied
voltage till the applied voltage exceeds the potential barrier, the current increases very
slowly with increases in applied voltage.
v
+ –
p n mA

D
I I

+ – ( )
V K Rh
Reverse Bias : When the p-side of the diode is connected to the negative terminal of
battery and n-side is connected to the positive terminal of battery.
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
Reverse biasing characteristics curve : The applied voltage supports the flow of minority
charge carriers across the junction. So, a very small current flow across the junction due to
minority charge carriers.
I(mA)

100 Forward Biasing

V 80
– + 60
40
p n A
– + 100 80 60 40 20 20
V(Volt)
Vbr 0.2 0.4 0.6 0.8 1.0
I I

Reverse Biasing
– +
V K Rh 1(A)

OR
(b) (i) Conductor : On the basis of energy band theory, those material in which valence band
and conduction band are partially filled or valance band and conduction band overlap is
known as conductor. There is no forbidden energy gap between the valence band and the
conduction band. In case of partially filled valence band, electrons from filled energy
levels can move easily to the unfilled higher energy levels and hence conduction of
electrons take place. In case of the overlap of valence and conduction bands, electrons
move easily from valence band to the conduction band. Thus, large number of electrons
are available for the conduction of electricity. Resistivity of conducting materials are
from 10–2 to 10–8 -m.
E

CB (Conduction band)
VB

(Valence band)

(ii) Insulator : On the basis of energy band theory, in insulators, the valence band is
completely filled with electrons and the conduction band is empty and both the bands
are separated by a forbidden energy gap of about greater than 3eV. At room
temperature, the electrons in the valence band cannot go to the conduction band and
hence insulator cannot conduct electricity. Therefore, insulator is a bad conductor of
electricity. Resistivity of insulators are from 1011 to 1019 -m.

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

(empty) Conduction band

E
E>g >
3eV
3eV
(filled) Valence band

(iii) Semiconductors : On the basis of energy band theory, semiconductors are those
material in which the forbidden energy gap between the filled valence band and the
empty conduction band is very small (i.e., < 3ev). At absolute zero temperature (0 K),
semiconductor behave as an insulator. But at room temperature, some of the electrons in
valence band have sufficient thermal energy to jump to the conduction band and a
semiconductor can conduct even at room temperature.
Germanium and Silicon are the examples of semiconductors. In case of Silicon, the
forbidden energy gap (Eg) at room temperature is about 1.1 eV and for Germanium it is
about 0.7 eV. Resistivity of semiconductors are from 10–5 to 106 -m.

Conduction band
E Eg< <3eV
3eV

Valence band

SECTION-D
29. (i) (D) IV
(ii) (D) accelerate along – î
(iii) (A) V = V0 + x
(iv) (a) (C) E4 > E3 > E2 > E1
OR
(b) (B) 2.6 × 106 m/s
30. (i) (D) 6
(ii) (C) 3
(iii) (a) (C) 6
OR
(b) (B) sin–1 (0.225)
(iv) (D) 10

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
SECTION-E
31. (a) (i) Considering a capacitor having each plate of area A, arranged at distance d. If charge
Q & –Q is given to it's plates then-
Electric field intensity in between plates of capacitor is
 +Q –Q
E= ........(1)
0 +  –
+ –
Q + –
Surface charge density,   + air –
A
+ –
From equation (1) + –
+ –
Q d
E= ......(2)
0 A
Potential difference between plates of capacitor,
V = E.d
from equation (2)
Q
V= ·d ......(3)
0 A
Q 0 A
By definition of electric capacitance, C=  C
 Q.d  d
 
 0 A 
0r A
When dielectric medium between its plates C
d
(ii) The potential at the sphere's surface is given as
6
1 q 9 6  10
V   9  10  = 27 × 104 V
4 0 r 0.2
Since the potential at any point inside the sphere will be equal to the potential at the
surface. The potential the centre of the sphere is given as
V = 27 × 104 V
OR
(b)(i) Charge given to a conducting sphere is distributed uniformly over it's outer surface. At all
points of this sphere, the magnitude of the electric field is same and its direction
everywhere is perpendicular to the surface.
E
E + q E

O R
E E

+
E E

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
When point lies outside the sphere (r > R) :
Using Gauss law, at a point P situated outside the sphere,
q inside
 EdA cos   0 + q P
E
dA
r
q  E  constant O
E  dA   R
0   0
+
q
So E  4r 2 
0

1 q kq 1
E out   E out  2  E out  2
40 r 2
r r

When point lies inside the sphere (r < R) :- + q

E
From Gauss law :- dA
O r P

+
R
q inside 
 EdA cos   
q inside  0
 +

 EdA cos   0  E in  0

Graph between E & r :

Electric field
(E) kq
E s=
R2
Es 1
Eout 
r2
Ein=0
O r=R distance (r)

(ii) Electric Field due to uniformly charged infinite plane sheet of charge :
Let infinite sheet of charge has surface charge density . The electric field at a point due to
charged plane sheet is directed perpendicular to the sheet.

+
+ + dA dEsin
+ 
 + +
dE
+ +
+x + r dEcos
+ +  
+ +O + +  P  dEcos
+x + 
+
+ + dE
+ + dEsin
+
dA+ +
+

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
Assuming a cylindrical Gaussian surface of length 2r and area of cross section A to find electric
field at point P.
From Gauss's law, the electric flux coming out of the given surface,
q
 EdA cos   0

A 
S EdA cos 0  S EdA cos 90  S EdA cos 0  0 q  A
1 2 3

+
(Cylindrical +
+ dA+ S1
E E
gaussian surface) +
A + S2 +
E  dA  0  E  dA  +
+
+ P
dA

S1 S3
0 S3
+
+
+ r
dA +
+ r +
A  E +
EA  EA   E + +
0 2 0 +
+

+ +
+ +
+ +
+ +

E2  2E1
32. (a) (i) (1) Current sensitivity is defined as the deflection produced in the galvanometer
when a unit current flows through it.
Current sensitivity is the deflection shown by galvanometer for a unit current
flow.
 NAB
Is  or
I K
Where  is the deflection in the coil.
Current sensitivity of galvanometer can be increased by
(a) Increasing the number of turns (N)
(b) Increasing magnetic induction (B)
(c) Increasing area of coil (A)
(d) Decreasing the couple per unit twist of the spiral springs. (By using
phosphor bronze wire)
(2) V = Ig [R + G]
V
Ig 
RG
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
V
 I g (R ' G)
2
V V
 (R ' G)
2 RG
RG
 G  R1
2
R G R G
R'   
2 2 2

(ii)   (2t 3  5t 2  6t)  10 3 wb

d
e= = (6t2 + 10t + 6) × 10–3 V
dt

e (6t 2  10t  6)  10 3
i=  A
R 5
at t = 2 sec

(24  20  6)  10 3
i
5
 i = 10 × 10–3 = 10–2 A
OR
(b) (i) When the armature coil rotates between magnetic poles with constant angular
velocity () then the magnetic flux linked with the armature coil changes with time.
The magnetic flux passing through coil is given by
 = BA cos where,   Angle between B and A
 = BA cost   t
If N be the number of turns in the coil then magnetic flux
  NBA cos t

Induced e.m.f.

d T
 t
dt
d
   NBA  cos t 
dt
 = – NBA (– sin t)

  NBA sin t 0 = NBA (maximum value)

  0 sin t

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
 BA
(ii) m 
I I
R L2
µ I r 2 µ r 2 4 10 7   (10 2 )2 r
= 0  = 0 = L1
2R I 2R 2 1
42  10 7  10 4
= = 19.7×10–11 H
2
A T
M
33. (a) (i) 
Q 1  R
i1 r2
i2
r1

P N S

B C
Let PQ & RS are incident & emergent rays. Let incident ray gets deviated by () in prism,
i.e. TMS = 
1 & 2 are deviation produced at surfaces AB & AC respectively.
     
 = (i1 – r1) + (i2 – r2)
 = (i1 + i2) – (r1 + r2) .....(1)
In quadrilateral AQNR,
A + QNR = 180o [QN, RN are normals]
Also, in QNR, QNR + r1 + r2 = 180o
 A = r1 + r2 .....(2)
From eq (1) & (2) , we get
  = (i1 + i2) – A .....(3)
Angle of deviation produced by prism varies with angle of incidence. When prism is
adjusted at angle of minimum deviation, then
i1 = i2 = i (suppose)
and   m
 r1 = r2 = r (suppose)
From (1) & (2) we have,
m = 2i – 2r
& 2r = A
A  m
i=
2
r = A/2
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
 Refractive index of material of prism is.

 A  m 
sin  
sin i  2 
 
sin r A
sin  
2
Y
50°

45°
Angle of deviation

40°
()

m

35°

i=
30°
O 30° 35° 40° 45° 50° 55° 60° X
Angle of incidence (i)

(ii) Applying Snell's law 45°

µ1sin i = µ2sinr A D

1 × sin45° = µ sin(90  )

1
cos    tan  = 2
2µ B C

2
 sin  =
3
1 1 3
sin = µl  
µ sin  2
OR
(b)(i) y1 = a cos t ….(1)
y2 = a cos (t + ) ….(2)
Resultant displacement will be given by -
y = y1 + y2
 CD  C  D 
y = a [cost + cos(t + )] cosC  cosD  2cos   cos  
  2   2 
y = 2a cos( cos(t + )
Amplitude of resultant wave :
R  2a cos( / 2)

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Resultant intensity :
I  KR 2  I  K[4a 2 cos2 ( / 2)]
I1 = I2 = I0 = Ka2

I  4 I 0 cos2   / 2 

For constructive interference :

 = 0, 2, 4, ………… = 2n
R  2a
I = K (4a2)
 I = 4I0
For destructive interference :
 = , 3, 5, ………… = (2n–1)
I0

(ii) I  I1  I2  2 I1 I2 cos 
 2 2  
I    2I  2I cos    3I = 3I   x   =
  3   6 3
 
6

 3
I    2I  2I cos  = 2I  2I 
  6 2
 12 

I    I(2  3)
 
 12 

I( /6) 3 (2  3)
  = 0.804
I( /12) 2 3 2 3

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