EMB06K03HP

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:
N-CH-Q1 N-CH-Q2
BVDSS 30V 30V
RDSON (MAX.) 9.5mΩ 6.5mΩ
ID 11A 14A
N-Channel MOSFET
UIS, Rg 100% Tested
Pb-Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT

Q1 Q2

Gate-Source Voltage VGS ±20 ±20 V

Continuous Drain Current TA = 25 °C 11 14
ID
TA = 100 °C 7 9
A
Pulsed Drain Current1 IDM 44 56
Avalanche Current IAS 32 38
Avalanche Energy L = 0.1mH EAS 51.2 72.2
mJ
Repetitive Avalanche Energy2 L = 0.05mH EAR 25.6 36.1
Power Dissipation TA = 25 °C PD 2.0 2.3
W
TA = 100 °C 0.8 0.9

Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNIT

Junction-to-Case RJC 2.6 1.8

°C / W
Junction-to-Ambient RJA 62 55
1
Pulse width limited by maximum junction temperature.
Duty cycle  1％
2

RJA when mounted on a 1 in2 pad of 2 oz copper.

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ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)

PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT
MIN TYP MAX

STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A Q1 30 V
Q2 30
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A Q1 1 1.5 3

Q2 1 1.5 3
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V Q1 ±100 nA
Q2 ±100
Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V Q1 1 A
Q2 1
VDS = 20V, VGS = 0V, TJ = 125 °C Q1 25
Q2 25
1
On-State Drain Current ID(ON) VDS = 10V, VGS = 10V Q1 15 A
Q2 25
Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 13A Q1 8.2 9.5
mΩ
VGS = 10V, ID = 20A Q2 5.2 6.5
VGS = 4.5V, ID = 9A Q1 11 15
VGS = 4.5V, ID = 15A Q2 7.0 9.5
Forward Transconductance1 gfs VDS = 5V, ID = 13A Q1 18 S
VDS = 5V, ID = 20A Q2 22

DYNAMIC
Input Capacitance Ciss Q1 828
VGS = 0V, VDS = 15V, f = 1MHz Q2 1983 pF

Output Capacitance Coss Q1 196

Q2 328
Reverse Transfer Capacitance Crss Q1 174

Q2 287
Gate Resistance Rg VGS = 15mV, VDS = 0V, f = 1MHz Q1 1.7 Ω
Q2 1.2
Total Gate Charge1,2 Qg(VGS=10V) Q1 17.6
VDD = 15V, VGS = 10V,
Q2 53 nC
ID = 10A
Qg(VGS=4.5V) Q1 12.5
Q2 25

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Gate-Source Charge1,2 Qgs VDD = 15V, VGS = 10V, Q1 2.8

ID = 10A
Q2 6
1,2
Gate-Drain Charge Qgd Q1 7.4
Q2 10
Turn-On Delay Time1,2 td(on) Q1 8
Q2 9 nS
Rise Time1,2 tr VDD = 15V, Q1 18
Q2 20
Turn-Off Delay Time1,2 td(off) ID = 1A, VGS = 10V, RGS = 2.7Ω Q1 20
Q2 25
Fall Time1,2 tf Q1 12
Q2 15

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current IS Q1 11
A
Q2 14
Pulsed Current3 ISM Q1 44
Q2 56
Forward Voltage1 VSD IF = 10A, VGS = 0V Q1 1.3 V
Q2 1.3
Reverse Recovery Time trr Q1 Q1 22 nS
IF = 10A, dlF/dt = 100A / S Q2 28
Reverse Recovery Charge Qrr Q2 Q1 6 nC
IF = 10A, dlF/dt = 100A / S Q2 18
Pulse test : Pulse Width  300 sec, Duty Cycle  2％.
1

2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
EMC will review datasheet by quarter, and update new version.

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Q1 TYPICAL CHARACTERISTICS
On-Region Characteristics
50 On-Resistance Variation with Drain Current and Gate Voltage
3
10V
7V 5V
40
2.5
VGS = 4.5V
V GS = 4.5V
ID ,Drain-Source Current( A )

Drain-Source On-Resistance
30 2

R DS(ON) ,Normalized
5V

20 1.5
7V
10V
10 1

0.5
0 0 10 20 30 40 50
0 0.5 1 1.5 2 2.5 3
I D ,Drain Current( A )
VDS ,Drain-Source Voltage( V )

On-Resistance Variation with Temperature On-Resistance Variation with Gate-Source Voltage

1.8 0.030
ID = 12A
VGS = 10V I D = 6A
1.6
Drain-Source On-Resistance
R DS(ON) ,Normalized

0.025
R DS(ON) ,On-Resistance( ohm )

1.4
0.020
1.2

0.015
1.0

TA = 125°C
0.8 0.010
TA = 25°C

0.6 0
-50 -25 0 25 50 75 100 125 150 2 6 8 10
4
Tj ,Junction Temperature(°C ) VGS ,Gate-Source Voltage( V )

Body Diode Forward Voltage Variation

Transfer Characteristics with Source Current and Temperature
60
25
VGS = 0V
VDS = 10V
T A = -55 °C TA = 125°C
25 °C 10
20
I ,Reverse Drain Current( A )
ID ,Drain Current( A )

1
125 °C
15
25°C
0.1

10 -55°C
0.01

5
S

0.001

0 0.0001
0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VGS ,Gate-Source Voltage( V ) VSD ,Body Diode Forward Voltage( V )

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G a t e C h a r g e C h a r a c t e r is t ic s C A P A C IT A N C E C H A R A C T E R IS T IC S
4
12 10
ID = 1 0 A

10

C-CAPACITANCE ( pF )
10 3 C is s
8
VGS ,Gate-Source Voltage( V )

10V
V D S =5V

6
15V
Co ss
C rss
4 10 2

2
f = 1 M Hz
V G S= 0 V
0
0 10 20 30 0 5 10 15 20 25 30
Q g ,G a te C h a rg e ( n C ) V DS -D R A IN -S O U R C E V L T A G E ( V )

Maximum Safe Operating Area Single Pulse Maximum Power Dissipation

100 250
Single Pulse
it RθJA = 62°C/W
) Lim 100μs
(ON TA = 25°C
R DS 1ms
P( pk ),Peak Transient Power( W )

10 200
ID - Drain Current( A )

10ms
100ms 150
1s
1 10s
DC
100
0.1 VGS = 10V
Single Pulse
RJA= 62°C/W
50
TA = 25°C
0.01
0.1 1 10 100 0
VDS - Drain-Source Voltage( V ) 0.0001 0.001 0.01 0.1 1 10 100
t 1 ,Time ( sec )
T r a n sie n t T h e r m a l R e s p o n se C u r v e
1
0 .5

0 .3
Transient Thermal Resistance

0 .1
0 .1
r(t),Normalized Effective

0 .0 5

0 .0 2

0 .0 1
0 .0 1
N o te s:
DM

S in g le P u lse 1 .D u ty C y cle , D = t2
t1

2 .R θ JA = 6 2 °C / W
3 .T J - T A = P * R θ J A (t)
4 .Rθ J A (t) = r (t) * Rθ J A
0 .0 0 1
0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 100 1000
t1 , T im e ( S E C )

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Q2 TYPICAL CHARACTERISTICS

On-Region Characteristics
50 On-Resistance Variation with Drain Current and Gate Voltage
10V 3
7V
5V
40
VGS = 4.5V 2.5
I D ,Drain-Source Current( A )

Drain-Source On-Resistance
30
2

RDS(ON) ,Normalized
VGS = 4.5V
5V

20
1.5
7V
10V
10 1

0 0.5
0 0.5 1 1.5 2 2.5 3 0 60 80 100
20 40
VDS ,Drain-Source Voltage( V ) I D ,Drain Current( A )

On-Resistance Variation with Gate-Source Voltage

On-Resistance Variation with Temperature 0.015
1.8
I D = 20A ID = 10A
VGS = 10V
1.6
Drain-Source On-Resistance

0.012
R DS(ON) ,Normalized

R DS(ON) ,On-Resistance( ohm )

1.4 TA = 125°C
0.009

1.2

0.006
1.0 TA = 25°C

0.003
0.8

0.6 0
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10
Tj ,Junction Temperature(°C ) VGS ,Gate-Source Voltage( V )

Transfer Characteristics
100 Body Diode Forward Voltage Variation with
Source Current and Temperature
VDS = 10V T A = -55 ° C 60
25 ° C VGS = 0V
80 TA = 125°C
125 ° C 10
I S ,Reverse Drain Current( A )
ID ,Drain Current( A )

60 1

25°C
0.1
40
-55°C
0.01
20

0.001

0
0 1 2 3 4 5 0.0001
VGS ,Gate-Source Voltage( V ) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD ,Body Diode forward Voltage( V )

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G A T E C H A R G E C H A R A C T E R IS T IC S C a p a c it a n c e C h a r a c t e r is t ic s
4
12 10
ID = 1 0 A

10

C is s
VGS ,GATE-SOURCE VOLTAGE (V)

3
10

C-Capacitance( pF )
8
V D S = 5V 10V
C oss
15V
6 C rss

2
4 10

2
f = 1 M H z
V GS= 0 V

0 0 5 1 0 1 5 20 25 3 0
0 20 40 60 V D S -D r a in -S o u r c e V o lt a g e ( V )
Q g ,G A T E C H A R G E (n C )

Maximum Safe Operating Area Single Pulse Maximum Power Dissipation

100
t 250
) L im i Single Pulse
ON
R DS( 100μs RθJA = 55°C/W
TA = 25°C
P( pk ),Peak Transient Power( W )

10 1ms 200
ID - Drain Current( A )

100ms
1s
10s 150
1
DC

100
0.1 VGS = 10V
Single Pulse
50
RJA= 55°C/W
TA = 25°C
0.01
1 10 100 0
0.1
VDS - Drain-Source Voltage( V ) 0.0001 0.001 0.01 0.1 1 10 100
t 1 ,Time ( sec )

T ra n s ie n t T h e r m a l R e s p o n s e C u r v e
1
0 .5

0 .3
Transient Thermal Resistance

0 .1
0 .1
r(t),Normalized Effective

0 .0 5

0 .0 2

0 .0 1
0 .0 1
N o tes:
DM

S in g le P u ls e 1 .D u ty C y cle , D = t1 t2
2 .R θ JA = 5 5 ° C / W
3 .T J - T A = P * R θ J A (t )
4 .Rθ JA ( t) = r (t ) * Rθ J A
0 .0 0 1
0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 100 1000
t 1 , T im e ( S E C )

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Ordering & Marking Information:

Device Name: EMB06K03HP for Asymmetric Dual EDFN 5 x 6

B06 EMB06K03HP: Device Name

K03 ABCDEFG: Date Code
ABCDEFG A: Assembly House
B: Year(A:2008 B:2009 C:2010….)
C: Month(A:01 B:02 C:03 D:04 E:05 F:06 G:07 H:08 I:09 J:10 K:11 L:12)
DEFG: Serial No.

Outline Drawing
D D2

e b
8
θ

L
L1
L3
L2

E2
E1
E

L4

E3

E5
E4

L5
1
C D3 D4

A1
A

Dimension in mm
Dimension A A1 b c D D2 D3 D4 E E1 E2 E3 E4 E5

Min. 0.85 0.00 0.35 0.15 4.5 2.125 0.835 2.4 0.40 1.125 0.475

Typ. 0.90 0.40 0.20 5.2 4.6 2.175 0.885 5.55 6.05 2.45 0.45 1.175 0.525

Max. 1.00 0.05 0.45 0.25 4.7 2.225 0.935 2.5 0.50 1.225 0.575

Dimension e L L1 L2 L3 L4 L5 F θ

Min. 0.35 0 1.375 0.2 1.3 0.575 0°

Typ. 1.27 0.45 1.475 0.3 1.4 0.675 45°

Max. 0.55 0.1 1.575 0.4 1.5 0.775 10°

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Recommended minimum pads

4.8
0.5

0.65
0.77

0.6

0.725

2.6
0.45

1.3

1.9
0.625

0.5

1.27 0.5
0.635

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 Tape&Reel Information:2500pcs/Reel(Dimension in millimeter)

1.75±0.1
8.00±0.10

1. - 0 .

5.50±0.05
50 0
2.00±0.05

R0.3 MAX
+0
.1
4.00±0.10

12.00±0.3
1.5+
1.4±0.1

-0.1
1.0
13
R1

2.2
59

R1
65
±0
.5

97.0±1.0
產品別 EDFN5X6
Reel 尺寸 13”
編帶方式

前空格 25
後空格 50
裝箱數
滿捲數量 2.5K
捲/內盒比 1：1
內盒滿箱數 2.5K
內/外箱比 10：1
外箱滿箱數 25K

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