VLSI Lecture series

a
n d
Two Terminal F u MOS
i n g
er
and it’s eEnergy band
g i n
E n diagram
By Prof. Hitesh Dholakiya
Engineering Funda
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Outlines

d a
n
❖ Basics of MOS
❖ Two terminal MOS structure
Fu
❖ MOS substrate basic properties
i ng
er
❖ Energy band diagram of p type substrate

in e
❖ Energy band diagram of MOS structure

n g
❖ Energy Band diagram of Combined MOS structure
E
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Basics of MOS

d a
n
❖ Full form of MOS is ‘Metal Oxide Semiconductor’.

Fu
❖ Compared to BJT, it occupy less space. So it is more suitable for
integrated circuits.
i ng
r
❖ At gate terminal, if voltage is applied, it creates channel for
e
e
conduction in between DRAIN and SOURCE terminal.
in
g
❖ Conduction is only depends on majority carrier only.
n
E
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Two Terminal MOS structure

d a
n
Gate G Terminal

u
𝑽𝑮 Gate Voltage ❖By Adding impurities like BORON
Metal
g F
(Trivalent) in pure semiconductor,

in
we make P type material.
Oxide SiO2

er ❖ SiO2 layer is acting like a dielectric

i n e layer. That forms capacitor in

g
P Type Si Substrate between gate and substrate.

n
❖ Thickness is there in order of 10nm

E to 50nm.
❖External voltage is applied in
Substrate Terminal
between gate and substrate
𝑽𝑩 Substrate Voltage terminal, which will justify carrier
concentration for channel.
MOS substrate basic properties

d a
n
❖ At equilibrium as per Mass Action Law
𝒏𝒑 = 𝒏𝒊 𝟐
F u
n g
❖ Where, n & p are electrons & holes concentration,
i
respectively.

300K is approximately 1.45 × e

n
10 −3
10 1/𝑐𝑚 .

10 to 10 𝑐𝑚 n ), g
❖ Here, we have substrate i of acceptor concentration 𝑁 (in order of
𝐴

E
15 16 −3
so holes and electrons concentration is given by,
𝒑 = 𝑵𝑨
𝒏𝒊 𝟐
𝒏=
𝑵𝑨
Energy Band diagram of P Type substrate
a
❖ The bandgap in between conduction band and valance

d
band is 1.1eV.

n
❖ Fermi potential 𝝓𝑭 , is based on intrinsic Fermi Level 𝑬𝒊

u
Free Space

F
and Fermi level 𝑬𝑭
𝑬𝑭 − 𝑬𝒊

g
𝒒𝝌 𝝓𝑭 =
𝒒

er
𝑬𝒄 Conduction
in
❖ For p type semiconductor, Fermi potential can be
approximated by

e
𝒌𝑻 𝒏𝒊
Band

n
𝝓𝑭𝒑 = 𝐥𝐧

i
Band gap 1.1eV 𝒒 𝑵𝑨

g
❖ For n type semiconductor, Fermi potential can be

𝒒𝝓𝑭
E n 𝑬𝒊 Intrinsic Fermi
Level
𝑬𝑭 Fermi Level
approximated by
𝝓𝑭𝒑 =
𝒌𝑻 𝑵𝑫
𝒒
𝐥𝐧
𝒏𝒊
❖ Electron affinity is 𝒒𝝌, which is energy gap in between
𝑬𝒗 valance Band conduction band and Free space.
❖ Energy required to move electron from fermi level to free
space is work function 𝒒𝝓𝑺 .
𝒒𝝓𝒔 = 𝒒𝝌 + (𝑬𝑪 − 𝑬𝑭 )
Energy band diagram of MOS structure
Metal Al Oxide

d a
Semiconductor Si

𝒒𝝌 = 𝟎. 𝟗𝟓𝐞𝐕

un
F
𝑬𝒄 Conduction Band 𝒒𝝌 = 𝟒. 𝟏𝟓𝐞𝐕

g
𝒒𝝓𝑴 = 𝟒. 𝟏𝒆𝑽

er in
e
𝑬𝑭 Fermi Level

g i n
Band gap 8eV

E n

𝑬𝒗 valance Band
Energy band Diagram of combined MOS structure
❖ When we combined the three MOS material, fermi level must lined up in

a
single line and Free space must be continuous.

n d
❖ Because of work function difference in between semiconductor and metal,

F u
there is voltage drop across MOS and banding of bands.

in g Metal Al Oxide Semiconductor Si

er
e
𝑬𝒄 Conduction Band

g i n
n
𝑬𝒊 Intrinsic Level

E 𝑬𝑭 Fermi Level

𝑬𝑽 Valance Band