polyfet rf devices

SQ741

General Description
Silicon VDMOS and LDMOS
transistors designed specifically SILICON GATE ENHANCEMENT MODE
for broadband RF applications.
Suitable for Militry Radios,
RF POWER VDMOS TRANSISTOR
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI, 50.0 Watts Push - Pull
Laser Driver and others.
TM Package Style AQ
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
HIGH EFFICIENCY, LINEAR
input impedance and high efficiency. HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Junction to Maximum Storage DC Drain Drain to Drain to Gate to
Device Case Thermal Junction Temperature Current Gate Source Source
Dissipation Resistance Temperature Voltage Voltage Voltage
o o o o
110 Watts 1.40 C/W 200 C -65 C to 150 C 4.5 A 125 V 125 V 20 V

RF CHARACTERISTICS ( 50.0 WATTS OUTPUT )

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

Gps Common Source Power Gain 11 dB Idq = 0.40 A, Vds = 50.0 V, F = 400 MHz
η Drain Efficiency 55 % Idq = 0.40 A, Vds = 50.0 V, F = 400 MHz
VSWR Load Mismatch Tolerance 20:1 Relative Idq = 0.40 A, Vds = 50.0 V, F = 400 MHz

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

Bvdss Drain Breakdown Voltage 125 V Ids = 10.00 mA, Vgs = 0V

Idss Zero Bias Drain Current 1.0 mA Vds = 50.0 V, Vgs = 0V

Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V

Vgs Gate Bias for Drain Current 1 7 V Ids = 0.05 A, Vgs = Vds

gM Forward Transconductance 0.8 Mho Vds = 10V, Vgs = 5V

Rdson Saturation Resistance 2.50 Ohm Vgs = 20V, Ids = 1.00 A

Idsat Saturation Current 3.50 Amp Vgs = 20V, Vds = 10V

Ciss Common Source Input Capacitance 48.0 pF Vds = 50.0 Vgs = 0V, F = 1 MHz

Crss Common Source Feedback Capacitance 0.2 pF Vds = 50.0 Vgs = 0V, F = 1 MHz

Coss Common Source Output Capacitance 17.0 pF Vds = 50.0 Vgs = 0V, F = 1 MHz

POLYFET RF DEVICES REVISION 03/08/2001

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
 SQ741

POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE

SQ741 F=400MHZ, VDS=50V, Idq=.4A S1E 1 DIE CAPACITANCE
100
65 18 Ciss
60 17
55
16
50 Pout
15
45 10
14
40 Coss
35 13

30 12
25 11
20 Gain 1
10 Crss
15
Efficiency = 55% 9
10
8
5
0 7
0.1
0 1 2 3 4 5 6 7 8 9 10
0 5 10 15 20 25 30 35 40 45 50
PIN IN WATTS
VDS IN VOLTS

IV CURVE ID & GM VS VGS

S1E 1 DIE IV S1E 1 DIE ID & GM Vs VG

4 10.00
Id
Id in amps; Gm in mhos

3.5

3
1.00
2.5
gM
ID IN AMPS

1.5 0.10
1

0.5
0.01
0
0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18
vg=2v Vg=4v VDSINVOLTSvg=8v
Vg=6v 0 vg=12v Vgs in Volts

S11 & S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES

Tolerance .XX +/-0.01 .XXX +/-.005 inches

POLYFET RF DEVICES REVISION 03/08/2001

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com