polyfet rf devices

SR401

General Description
Silicon VDMOS and LDMOS
transistors designed specifically SILICON GATE ENHANCEMENT MODE
for broadband RF applications.
Suitable for Militry Radios,
RF POWER VDMOS TRANSISTOR
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI, 300.0 Watts Push - Pull
Laser Driver and others.
TM Package Style AR
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
HIGH EFFICIENCY, LINEAR
input impedance and high efficiency. HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Junction to Maximum Storage DC Drain Drain to Drain to Gate to
Device Case Thermal Junction Temperature Current Gate Source Source
Dissipation Resistance Temperature Voltage Voltage Voltage
o o o o
465 Watts 0.35 C/W 200 C -65 C to 150 C 27.0 A 70 V 70 V 20 V

RF CHARACTERISTICS ( 300.0 WATTS OUTPUT )

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

Gps Common Source Power Gain 13 dB Idq = 1.20 A, Vds = 28.0 V, F = 175 MHz
η Drain Efficiency 55 % Idq = 1.20 A, Vds = 28.0 V, F = 175 MHz
VSWR Load Mismatch Tolerance 20:1 Relative Idq = 1.20 A, Vds = 28.0 V, F = 175 MHz

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

Bvdss Drain Breakdown Voltage 65 V Ids = 120.00 mA, Vgs = 0V

Idss Zero Bias Drain Current 6.0 mA Vds = 28.0 V, Vgs = 0V

Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V

Vgs Gate Bias for Drain Current 1 7 V Ids = 0.60 A, Vgs = Vds

gM Forward Transconductance 7.2 Mho Vds = 10V, Vgs = 5V

Rdson Saturation Resistance 0.16 Ohm Vgs = 20V, Ids =15.00 A

Idsat Saturation Current 42.00 Amp Vgs = 20V, Vds = 10V

Ciss Common Source Input Capacitance 300.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz

Crss Common Source Feedback Capacitance 15.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz

Coss Common Source Output Capacitance 200.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz

POLYFET RF DEVICES REVISION 10/08/2001

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
 SR401

POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE

SR401 Pin vs Pout Freq=175Mhz; S4 1 DIE CAPACITANCE
Vds=28Vdc, Idq=1.2A 1000
320 18

280
17 Ciss
240
Pout 16
200 Coss
P1dB = 200W
100
160 15

120
14
Gain
80

13
40
Efficiency @200W = 52% Crss
0 12
10
0 5 10 15 20 0 5 10 15 20 25 30
Pin in Watts VDS IN VOLTS

IV CURVE ID & GM VS VGS

vg=2v Vg=4v
S4A 1 DIE IV Vg=6v Vg=8v 100.00 S4A 1 DIE ID & GM Vs VG
45 Vg=10v vg=12v
Id in amps; Gm in mhos

40

35

30 Id
ID IN AMPS

25
10.00
20

15
gM
10

0
0 2 4 6 8 10 12 14 16 18 20 1.00
VDS IN VOLTS 0 2 4 6 8 10 12 14
Vgs in Volts

Zin Zout PACKAGE DIMENSIONS IN INCHES

Tolerance .XX +/-0.01 .XXX +/-.005 inches

POLYFET RF DEVICES REVISION 10/08/2001

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com