HYG065N07NS1D/U/V

N-Channel Enhancement Mode MOSFET

Feature Pin Description

 70V/70A
RDS(ON)= 6mΩ(typ.)@VGS = 10V
 100% Avalanche Tested
S
 Reliable and Rugged G
D S
D
G
 Halogen Free and Green Devices Available
D S
G
(RoHS Compliant)
TO-252-2L TO-251-3L TO-251-3S

Applications

 Switching application
 Power Management for Inverter Systems
 Motor control

N-Channel MOSFET

Ordering and Marking Information

Package Code
D U V D: TO-252-2L U: TO-251-3L V:TO-251-3S
G065N07 G065N07 G065N07
XYMXXXXXX XYMXXXXXX XYMXXXXXX Date Code
XYMXXXXXX

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-
Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).

HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.

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Absolute Maximum Ratings

Symbol Parameter Rating Unit

Common Ratings (Tc=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage 70 V
VGSS Gate-Source Voltage ±20 V
TJ Junction Temperature Range -55 to 175 °C
TSTG Storage Temperature Range -55 to 175 °C
IS Source Current-Continuous(Body Diode) Tc=25°C 70 A
Mounted on Large Heat Sink
IDM Pulsed Drain Current * Tc=25°C 300 A
Tc=25°C 70 A
ID Continuous Drain Current
Tc=100°C 49.5 A
Tc=25°C 62.5 W
PD Maximum Power Dissipation
Tc=100°C 31.2 W
RθJC Thermal Resistance, Junction-to-Case 2.4 °C/W
RθJA Thermal Resistance, Junction-to-Ambient ** 110 °C/W
EAS Single Pulsed-Avalanche Energy *** L=0.3mH 213 mJ

Note: * Repetitive rating；pulse width limited by max. junction temperature.

** Surface mounted on FR-4 board.
*** Limited by TJmax , starting TJ=25°C, L = 0.3mH, RG= 25Ω, VGS =10V.

Electrical Characteristics(Tc =25°C Unless Otherwise Noted)

HYG065N07NS1
Symbol Parameter Test Conditions Unit
Min Typ. Max
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V,IDS=250μA 70 - - V
VDS=70V,VGS=0V - - 1 μA
IDSS Drain-to-Source Leakage Current
TJ=125°C - - 50 μA
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250μA 2 3 4 V
IGSS Gate-Source Leakage Current VGS=±20V,VDS=0V - - ±100 nA
RDS(ON)* Drain-Source On-State Resistance VGS=10V,IDS=40A - 6 6.5 mΩ
Diode Characteristics
VSD* Diode Forward Voltage ISD=40A,VGS=0V - 0.91 1.1 V
trr Reverse Recovery Time - 34 ns
ISD=40A,dISD/dt=100A/μs
Qrr Reverse Recovery Charge - 37 nC

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Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted)

HYG065N07NS1
Symbol Parameter Test Conditions Unit
Min Typ. Max
Dynamic Characteristics
VGS=0V,VDS=0V,F=1
RG Gate Resistance - 3.5 - Ω
MHz
Ciss Input Capacitance VGS=0V, - 2908 -
Coss Output Capacitance VDS= 25V, - 844 - pF
Crss Reverse Transfer Capacitance Frequency=1.0MHz - 21 -
td(ON) Turn-on Delay Time - 15 -
Tr Turn-on Rise Time VDD= 35V,RG=4.0Ω, - 79 -
ns
td(OFF) Turn-off Delay Time IDS= 40A,VGS= 10V - 42 -
Tf Turn-off Fall Time - 70 -
Gate Charge Characteristics
Qg Total Gate Charge - 52 -
VDS =56V, VGS=10V，
Qgs Gate-Source Charge - 16 - nC
ID=20A
Qgd Gate-Drain Charge - 12 -

Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2%

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Typical Operating Characteristics

Figure 1: Power Dissipation Figure 2: Drain Current

Power Dissipation (w)

ID-Drain Current(A)
Tc-Case Temperature(℃) Tc-Case Temperature(℃)

Figure 3: Safe Operation Area Figure 4: Thermal Transient Impedance

Impedance (℃/W)
Normalized Transient
ID-Drain Current(A)

Thermal
Zjc

VDS-Drain-Source Voltage(V) Maximum Effective Transient Thermal

Impedance, Junction-to-Case

Figure 5: Output Characteristics Figure 6: Drain-Source On Resistance

RDS(ON)-ON-Resistance(Ω)
ID-Drain Current(A)

VDS-Drain-Source Voltage (V) ID-Drain Current(A)

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Typical Operating Characteristics(Cont.)

Figure 7: On-Resistance vs. Temperature Figure 8: Source-Drain Diode Forward

Normalized On-Resistance(A)

IS-Source Current (A)

Tj-Junction Temperature (℃) VSD-Source-Drain Voltage(V)

Figure 9: Capacitance Characteristics Figure 10: Gate Charge Characteristics

VGS-Gate-Source Voltage (V)
C-Capacitance(pF)

VDS-Drain-Source Voltage (V) QG-Gate Charge (nC)

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Avalanche Test Circuit

Switching Time Test Circuit

Gate Charge Test Circuit

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Device Per Unit

Package Type Unit Quantity

TO-252-2L Tube 75
TO-252-2L Reel 2500
TO-251-3L Tube 75
TO-251-3S Tube 75

Package Information
TO-252-2L

COMMON DIMENSIONS
mm
SYMBOL
MIN NOM MAX
A 2.20 2.30 2.40
A1 0.00 - 0.20
A2 0.97 1.07 1.17
b 0.68 0.78 0.90
b3 5.20 5.33 5.50
c 0.43 0.53 0.63
D 5.98 6.10 6.22
D1 5.30REF
E 6.40 6.60 6.80
E1 4.63 - -
e 2.286BSC
H 9.40 10.10 10.50
L 1.38 1.50 1.75
L1 2.90REF
L2 0.51BSC
L3 0.88 - 1.28
L4 - - 1.00
L5 1.65 1.80 1.95
θ 0° - 8°

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TO-251-3L

COMMON DIMENSIONS
mm
SYMBOL
MIN NOM MAX
A 2.20 2.30 2.40
A2 0.97 1.07 1.17
b 0.68 0.78 0.90
b2 0.00 0.04 0.10
b2' 0.00 0.04 0.10
b3 5.20 5.33 5.50
c 0.43 0.53 0.63
D 5.98 6.10 6.22
D1 5.30REF
E 6.40 6.60 6.80
E1 4.63 - -
e 2.286BSC
H 16.22 16.52 16.82
L1 9.15 9.40 9.65
L3 0.88 1.02 1.28
L5 1.65 1.80 1.95

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TO-251-3S

COMMON DIMENSIONS
mm
SYMBOL
MIN NOM MAX
A 2.20 2.30 2.40
A2 0.97 1.07 1.17
b 0.68 0.78 0.90
b3 5.20 5.33 5.50
c 0.43 0.53 0.63
D 5.98 6.10 6.22
D1 5.30REF
E 6.40 6.60 6.80
E1 4.63 - -
e 2.286BSC
H 10.00 11.22 11.44
L1 3.90 4.10 4.30
L3 0.88 1.02 1.28
L5 1.65 1.80 1.95

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Classification Profile

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly

Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
3 °C/second max. 3°C/second max.
(Tsmax to TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 See Classification Temp in table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.
Time 25°C to peak temperature 6 minutes max. 8 minutes max.
*Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.

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Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)

Package Volume mm³ Volume mm³
Thickness <350 ≥350
＜2.5 mm 235 °C 220 °C
≥2.5 mm 220 °C 220 °C

Table 2.Pb-free Process – Classification Temperatures (Tc)

Package Volume mm³ Volume mm³ Volume mm³
Thickness <350 350-2000 ≥2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
≥2.5 mm 250 °C 245 °C 245 °C

Reliability Test Program

Test item Method Description

SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HTRB JESD-22, A108 168/500/1000 Hrs, Bias @ 150°C
HTGB JESD-22, A108 168 /500/1000 Hrs, Vgs100% @ 150°C
PCT JESD-22, A102 96 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -55°C~150°C

Customer Service
Worldwide Sales and Service: [email protected]
Technical Support:[email protected]
Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and Technological Development Zone,Xi'an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: [email protected]
Web net: www.hymexa.com

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