• Expanded Hybrid pi-model
• High frequency analysis
• Short Circuit Current Gain
• Miller Theorem
Objective: Determine the frequency response of the bipolar
transistor, and determine the Miller effect and Miller
capacitance.
▪ Thus far, we have considered the frequency response of
circuits as a function of external resistors and capacitors
▪ We have assumed the transistor to be ideal.
▪ However, both bipolar transistors and FETs have internal
capacitances that influence the high-frequency response of
circuits.
In this section,
▪ We will first develop an expanded small-signal hybrid-π model
of the bipolar transistor, taking these capacitances into account.
▪ We will then use this model to analyze the frequency
characteristics of the bipolar transistor.
Expanded Hybrid-π Equivalent Circuit
The C, B, and E terminals are
the external connections to
the transistor, and the Cʹ, Bʹ,
and Eʹ points are the idealized
internal collector, base, and
emitter regions.
To construct the equivalent circuit of the transistor, we will first
consider three pairs of terminals. Such as
▪ base to emitter
▪ collector to emitter and
▪ base to collector
Components of the hybrid-π equivalent circuit
rb → base series resistance between the
external base terminal B and the internal
base region Bʹ.
Cπ → B–E junction is forward biased;
it is the forward biased junction capacitance
rπ → forward-biased junction diffusion
resistance.
Cπ , rπ → Both parameters are functions of the
junction currents.
rex → emitter series resistance between the
external emitter terminal and the internal emitter
region. very small, on the order of 1 to 2 .
(b) collector to emitter
rc → is the collector series resistance between
the external and internal collector connections
Cs→ is the junction capacitance of the reverse
biased collector–substrate junction
gmVπ →The dependent current source. It is the
transistor collector current controlled by the
internal base–emitter voltage
ro→ output resistance due primarily to the
Early effect.
(c) base to collector
Cμ →reverse-biased junction capacitance
rμ → reverse-biased diffusion resistance
rμ → It is on the order of megaohms and can
be neglected
***The value of Cμ is usually much smaller than Cπ ; however, because
of a phenomenon known as the Miller effect, Cμ usually cannot be
neglected.
Short-Circuit Current Gain
Here the parasitic resistances rb, rc, and rex , the B–C diffusion resistance rμ, and
the substrate capacitance Cs are neglected to simplify the equivalent circuit
We will determine the small-signal current gain Ai = Ic/Ib .
Since gmrπ = β, then the low frequency current gain is just β
𝛽
ℎ𝑓𝑒 = ………………………………………………….(7.68)
1+𝑗𝜔𝑟𝜋 𝐶𝜋 +𝐶𝜇
Where the β-cut off frequency is
1
𝑓𝛽 =
2𝜋𝑟𝜋 𝐶𝜋 + 𝐶𝜇
Cutoff Frequency
At frequency fT , this gain goes to 1
From Equation (7.67), we can write the small-signal
current gain in the form
where fβ is the beta cutoff frequency
• The magnitude of h fe is
* Frequency fβ is also called the bandwidth of the transistor
* fT is the gain–bandwidth product of the transistor or more commonly the
unity-gain bandwidth
• Prob.#1: Determine the 3 dB frequency of the short-circuit
current gain of a bipolar transistor. Consider a bipolar transistor
with parameters rπ = 2.6k, Cπ = 0.5 pF and Cμ = 0.025 pF.
• Prob.#2: Calculate the bandwidth fβ and capacitance Cπ of a
bipolar transistor. Consider a bipolar transistor that has
parameters fT = 20 GHz at IC = 1 mA, βo = 120, and Cμ = 0.08
pF.
• Prob.#3: A BJT is biased at IC = 0.15 mA, and has parameters
βo = 150, Cπ = 0.8 pF, and Cμ = 0.012 pF. Determine fβ and fT .
(Ans. fβ = 7.54 MHz, fT = 1.13 GHz)
Miller Effect and Miller Capacitance
Miller Theorem:
The Miller theorem establishes that in a linear circuit, if there
exist a branch with impedance Z connecting two nodes with
nodal voltages V1 and V2 , we can replace this branch by two
branches connecting the corresponding nodes to ground by
𝑍 𝑘𝑍 𝑉2
impedances respectively and , where 𝑘 =
1−𝑘 𝑘−1 𝑉1
Exp.: 7.10
Determine the 3 dB frequency of the current gain for the circuit shown
in Figure 7.46, both with and without the effect of CM.
The circuit parameters are: RC = RL = 4k , rπ = 2.6k , RB = 200 k,
Cπ = 0.8pF , Cμ = 0.05 pF, and gm = 38.5mA/V.
Exp. :7.13
Determine the upper corner frequency and midband gain of a common-
emitter circuit.
For the circuit in the Figure, the parameters are: V+= 5 V, V−=−5 V,
RS = 0.1k , R1 = 40k, R2 = 5.72k , RE = 0.5 k , RC = 5 k and RL =10 k .
The transistor parameters are: β = 150 , VBE(on)= 0.7 V, VA =∞, Cπ=35pF,
and Cμ = 4 pF.
*** Practice related problems
