Lab Manual BE
Lab Manual BE
Certificate
This is to certify that Mr./Ms. ___________________________________
________ Enrollment No. _______________ of B.E. Semester _____
Electronics & Communication Engineering of this Institute (GTU Code: 013)
has satisfactorily completed the Practical work for the subject Basic
Electronics Engineering (__________) for the academic year ODD 2024-25.
Place: __________
Date: __________
Total
Clarity of 1)The student 1)The students can 1)The students can 1)The students can
concepts and understands the identify the identify the clearly identify
record book practical but struggles equipment and equipment properly components ,
to identify the connect the circuits and understand the
equipment and properly. 2)connect the circuits procedures , and
2)clumsy while 2)Struggle to take properly and arrange neatly arranges
working on proper reading. the equipment. practical setup.
practicality. 2)Takes proper
3)Take near accurate reading, prepare
reading and can graphs and calculate
make calculations. the needed
parameters.
Practical Skills 1)Struggles to 1)Can complete basic 1)Can complete 1)Can complete
complete basic laboratory tasks with laboratory tasks complex laboratory
laboratory tasks. some guidance. independently and tasks independently
2)Requires extensive 2)Requires some efficiently. and efficiently.
guidance and guidance and 2)Has a good level of 2)Has a high level of
assistance to use assistance to use proficiency in using proficiency in using
laboratory equipment. laboratory laboratory laboratory equipment.
3)Has difficulty equipment. equipment. 3)Can analyze
interpreting 3)Can interpret 3)Can interpret experimental results
experimental results experimental results experimental results and draw sophisticated
and making with some accuracy, accurately and make conclusions.
conclusions. but has difficulty well-supported
making conclusions. conclusions.
Experiment No: 0
Program Objectives:
Program Outcome (PO)
Engineering Graduates will be able to:
PO1.Engineering knowledge: Apply the knowledge of mathematics, science, engineering
fundamentals, and an engineering specialization to the solution of complex engineering problems.
PO2. Problem analysis: Identify, formulate, review research literature, and analyze complex
engineering problems reaching substantiated conclusions using first principles of
mathematics,natural sciences, and engineering sciences.
PO3. Design/development of solutions: Design solutions for complex engineering problems and
design system components or processes that meet the specified needs with appropriate
consideration for the public health and safety, and the cultural, societal, and environmental
considerations.
PO4. Conduct investigations of complex problems: Use research-based knowledge and research
methods including design of experiments, analysis and interpretation of data, and synthesis of the
information to provide valid conclusions.
PO5. Modern tool usage: Create, select, and apply appropriate techniques, resources, and modern
engineering and IT tools including prediction and modeling to complex engineering activities with
an understanding of the limitations.
PO6. The engineer and society: Apply reasoning informed by the contextual knowledge to assess
societal, health, safety, legal and cultural issues and the consequent responsibilities relevant to the
professional engineering practice.
PO7. Environment and sustainability: Understand the impact of the professional engineering
solutions in societal and environmental contexts, and demonstrate the knowledge of, and need for
sustainable development.
PO8. Ethics: Apply ethical principles and commit to professional ethics and responsibilities and
norms of the engineering practice.
PO9. Individual and team work: Function effectively as an individual, and as a member or leader
in diverse teams, and in multidisciplinary settings.
PO10. Communication: Communicate effectively on complex engineering activities with the
engineering community and with society at large, such as, being able to comprehend and write
effective reports and design documentation, make effective presentations, and give and receive
clear instructions.
PO11. Project management and finance: Demonstrate knowledge and understanding of the
engineering and management principles and apply these to one’s own work, as a member and
leader in a team, to manage projects and in multidisciplinary environments.
PO12. Life-long learning: Recognize the need for, and have the preparation and ability to engage
in independent and life-long learning in the broadest context of technological change.
Course Outcomes:
CO-1 : Analyze the general and special-Purpose diode circuits
CO-2 : Design biasing circuits for BJT
CO-3 : Analyze BJT circuits in small signal domain
CO-4 : Analyze FET circuits for DC voltages and currents
CO-5 : Understand usage of Special Purpose Diodes
Experiment No: 01
Study of Multimeter & CRO and Measurement of Voltage & current,
Amplitude & Frequency
Date:
Competency and Practical Skills: After this practical students are expected to develop following
competencies and skills ,
1) Proper understanding of Multimeter and CRO and Measurements as these are the most basic set
of measurement instruments
2) Knowledge of Working of Multimeter and CRO ,various available functionalities how to use it in
measurements
3) Practical hands of Multimeter and CRO and Troubleshooting skills in case of not getting the
desired results.
Relevant CO: CO-1 : Analyze the general – and special-Purpose diode circuits
Objectives:
1) To achieve mentioned competency and have hands on of the Multimeter and CRO
2) To be able to measure AC and DC voltage and current in the circuitry.
3) To be able to calculate frequency , Amplitude and various shifts from the CRO which
will enable them to understand and use DSO effectively.
4) Troubleshoot the instrument in case of not getting desired results.
5) Study of CRO and to find the Amplitude and Frequency using CRO.
6) To measure the Unknown Frequency & Phase difference using CRO.
Equipment/Instruments: Digital Multimeter, Cathode-ray oscilloscope, Function Generator,
Regulated Power supply, Decade Resistance Box (DRB), CRO Probes and Bread Board.
[A] MULTIMETER:
Theory:
A digital multimeter (DMM) is a measuring instrument used to measure various electrical
quantities. The standard measurements that are performed by a DMM are current, voltage and
resistance. Apart from these, a digital multimeter can also measure temperature, frequency,
capacitance, continuity, transistor gains etc.
DMM Controls and Connection Ports
A typical DMM has a rotary switch, digital display and connecting jacks for the probes. Let’s see
the various parts of DMM in somewhat details −
Display − The DMM has an illuminated display screen for better visualisation. Most DMM have
four digit display, the first of which can only be either a 0 or 1 and a + / - indication as well.
There may also be some more indicators like AC / DC etc.
Connection Ports − There are three or four ports available on the front of the DMM. However,
only two are needed at a time. Typical ports of the DMM are −Common − It is used with all
measurements. The negative (black) probe is connected to this.
VΩmA Port − This port is used for the most measurements and positive (red)probe is connected
to it.
Measuring Voltage:
To measure potential-difference, or voltage, a voltmeter must be connected between two points at
different potentials. In other words, a voltmeter must always be connected in parallel with the part
of the circuit under test. In order to operate, a voltmeter must, of course, draw some current from
the circuit under test, and this can lead to inaccurate results because it can interfere with the normal
condition of the circuit. We call this the ‗loading effect‘ and, to minimise this ‗loading effect‘
(and, therefore, improve the accuracy of a reading), this operating current must be as small as
possible and, for this reason, voltmeters are manufactured with a very high value of internal
resistance —usually many megohms
Procedure:
1. Turn the meter ON.
3. Set the dial (rotary switch) to the correct measurement type and range for the measurement to be
made. While selecting the range, ensure that the maximum range is above than that is expected.
Optimise the range for the best reading. If possible enable all the leading digits to not read zero,
in this way the greatest number of significant digits can be read.
4. Once the measurement is completed, it is a wise precaution to place the probes into the voltage
measurement ports and turn the range to maximum voltage. So that if the meter probes are
accidentally connected across a high voltage point, there is a little chance of damage to the
DMM.
Circuit Diagram: Teacher can give any basic circuit for basic voltage and current measurement
Obsevations:
[B] CRO:
Theory: An outline explanation of how an oscilloscope works can be given using the block
diagram shown below.
Fig. 1: Cathode Ray Oscilloscope
Like a television screen, the screen of an oscilloscope consists of a Cathode Ray Tube.
Although the size and shape are different, the operating principle is the same. Inside the tube is a
vacuum. The electron beam emitted by the heated cathode at the rear end of the tube is accelerated
and focused by one or more anodes, and strikes the front of the tube, producing a bright spot on
the phosphorescent screen.
The electron beam is bent, or deflected, by voltages applied to two sets of plates fixed in
the tube. The horizontal deflection plates or X-plates produce side to side movement. As you can
see, they are linked to a system block called the time base. This produces a saw tooth waveform.
During the rising phase of the saw tooth, the spot is driven at a uniform rate from left to right
across the front of the screen. During the falling phase, the electron beam returns rapidly from
right ot left, but the spot is 'blanked out' so that nothing appears on the screen. In this way, the
time base generates the X-axis of the V/t graph.
The slope of the rising phase varies with the frequency of the saw tooth and can be
adjusted, using the TIME/DIV control, to change the scale of the X-axis. Dividing the oscilloscope
screen into squares allows the horizontal scale to be expressed in seconds, milliseconds or
microseconds per division (s/DIV, ms/DIV, µs/DIV). Alternatively, if the squares are 1 cm apart,
the scale may be given as s/cm, ms/cm or µs/cm.
The signal to be displayed is connected to the input. The AC/DC switch is usually kept in
the DC position (switch closed) so that there is a direct connection to the Y-amplifier. In the AC
position (switch open) a capacitor is placed in the signal path. The capacitor blocks DC signals
but allows AC signals to pass.
The Y-amplifier is linked in turn to a pair of Y-plates so that it provides the Y-axis of the
the V/t graph. The overall gain of the Y-amplifier can be adjusted, using the VOLTS/DIV
control, so that the resulting display is neither too small nor too large, but fits the screen and can
be seen clearly. The vertical scale is usually given in V/DIV or mV/DIV.
Changing the scales of the X-axis and Y-axis allows many different signals to be displayed.
Sometimes, it is also useful to be able to change the positions of the axes. This is possible using
the X-POS and Y-POS controls. For example, with no signal applied, the normal trace is a straight
line across the centre of the screen. Adjusting Y-POS allows the zero level on the Y-axis to be
changed, moving the whole trace up or down on the screen to give an effective display of signals
like pulse waveforms which do not alternate between positive and negative values.
Fig. 2: Front View of Oscilloscope
Screen: Usually displays a V/t graph, with voltage V on the vertical axis and time t on the
horizontal axis. The scales of both axes can be changed to display a huge variety of signals.
When the X-Y button is pressed IN, the oscilloscope does not display a V/t graph. Instead,
the vertical axis is controlled by the input signal to CH II. This allows the oscilloscope to be used
to display a V/V voltage/voltage graph.
The X-Y control is used when you want to display component characteristic curves, or
Lissajous figures. (Links to these topics will be added later.)
Time / Div: Allows the horizontal scale of the V/t graph to be changed.
Intensity and Focus: Adjusting the INTENSITY control changes the brightness of the
oscilloscope display. The FOCUS should be set to produce a bright clear trace.
If required, TR can be adjusted using a small screwdriver so that the oscilloscope trace is exactly
horizontal when no signal is connected.
Volts / Div: Adjust the vertical scale of the V/t graph. The vertical scales for CH I and CH II
can be adjusted independently.
DC/AC/GND Slide Switches: In the DC position, the signal input is connected directly to
the Y-amplifier of the corresponding channel, CH I or CH II. In the AC position, a capacitor is
connected into the signal pathway so that DC voltages are blocked and only changing AC
signals are displayed.
In the GND position, the input of the Y-amplifier is connected to 0 V. This allows you to check
the position of 0 V on the oscilloscope screen. The DC position of these switches is correct for most
signals.
Model waveforms:
A) Measurement of Amplitude:
Procedure:
1. Make the connections as per the diagram shown above.
2. Put the CRO on a single channel mode and bring the CRO into operation by adjusting
the trace of the beam to a normal brightness and into a thin line.
3. Now apply the sinusoidal wave of different amplitudes by using the LEVEL and
COARSE buttons of the function generator.
Observations:
Observations:
Result:
Conclusion:
Quiz:
1) List out the functions of the multimeter.
2) Draw a simple circuit diagram by placing voltmeter and ammeter to measure voltage and current
respectively.
4) Give the max range of voltage and frequency that your CRO can measure.
Suggested Reference:
https://www.tutorialspoint.com/electronic_measuring_instruments/measuring_instruments.htm
References used by the students:
Clarity of
concepts and
record book
Knowledge and
Understanding
Practical Skills
Experiment No: 2
Obtain V-I characteristic of P-N junction Diode.
Date:
Theory:
Donor impurities (pentavalent) are introduced into one-side and acceptor impurities into the
other side of a single crystal of an intrinsic semiconductor to form a p-n diode with a junction
called depletion region (this region is depleted off the charge carriers). This region gives rise to a
potential barrier called Cut-in Voltage. This is the voltage across the diode at which it starts
conducting. The P-N junction can conduct beyond this potential.
Forward bias :
The P-N junction supports uni-directional current flow. If +ve terminal of the input supply is
connected to anode (P-side) and –ve terminal of the input supply is connected the cathode. Then
diode is said to be forward biased. In this condition the height of the potential barrier at the junction
is lowered by an amount equal to given forward biasing voltage. Both the holes from p-side and
electrons from n-side cross the junction simultaneously and constitute a forward current from n-
side (injected minority current – due to holes crossing the junction and entering P- side of the
diode). Assuming current flowing through the diode to be very large, the diode can be
approximated as short- circuited switch.
Reverse bias:
If –ve terminal of the input supply is connected to anode (p-side) and +ve terminal of the input
supply is connected to cathode (n-side) then the diode is said to be reverse biased. In this condition
an amount equal to reverse biasing voltage increases the height of the potential barrier at the
junction. Both the holes on P-side and electrons on N-side tend to move away from the junction
there by increasing the depleted region. However the process cannot continue indefinitely, thus a
small current called reverse saturation current continues to flow in the diode. This current is
negligible hence the diode can be approximated as an open circuited switch.
Circuit diagram:
Procedure:
Forward Bias Condition:
1. Connect the components as shown in the Fig.1.
2. Vary the supply voltage such that the voltage across the Silicon diode varies from 0 to 0.6 V in
steps of 0.1 V and in steps of 0.02 V from 0.6 to 0.76 V. In each step record the current flowing
through the diode as Id and Voltage across diode Vd.
3.Repeat the above steps for Germanium diode too but with the exception that the voltage across
the diode should be varied in steps of 0.01 V from 0.1 to 0.3 V in step-2.
Observations:
Forward Bias:
Sr. Input voltage Forward Voltage Forward
No. Vi (volt) VD (volt) Current
I D (mA)
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
Reverse Bias:
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
Results:
Cut in Voltage = _______________V
Reverse Breakdown Voltage = _____________V
Static Forward Resistance = ______________Ω
Dynamic Forward Resistance = _____________Ω
Static Reverse Resistance = ______________Ω
Dynamic Reverse Resistance = _____________Ω
Quiz:
1) Give applications of P-N junction diode.
3) Define PIV
Suggested Reference:
1) David A. Bell, “Electronic Devices and Circuits”, Oxford University Press, Fifth edition
2) Albert Malvino & David, “Electronic Principles”, Tata McGraw-Hill, Seventh edition
References used by the students:
Clarity of
concepts and
record book
Knowledge
and
Understanding
Practical Skills
Experiment No: 3
Obtain V-I characteristic of Zener Diode.
Date:
Objectives:
1) To perform an Experiment to Study forward bias and reverse bias characteristics of Zener Diode
2) Observe and calculate diode voltages and current
Equipment/Instruments: Trainer kit, Power supply, Patch cords, Digital Multimeters, Zener
Diode, Resistors , bread board, Connectors
Theory:
Zener diode is a heavily doped Silicon diode. An ideal P-N junction diode does not conduct in
reverse biased condition. A Zener diode conducts excellently even in reverse biased condition.
These diodes operate at a precise value of voltage called break down voltage. A Zener diode when
forward biased behaves like an ordinary P-N junction diode. A Zener diode when reverse biased
can undergo avalanche break down or zener break down.
Avalanche Break down:
If both p-side and n-side of the diode are lightly doped, depletion region at the junction widens.
Application of a very large electric field at the junction increases the kinetic energy of the charge
carriers which collides with the adjacent atoms and generates charge carriers by breaking the bond,
they in-turn collides with other atoms by creating new charge carriers, this process is cumulative
which results in the generation of large current resulting in Avalanche Breakdown.
Zener Break down:
If both p-side and n-side of the diode are heavily doped, depletion region at the junction reduces,
it leads to the development of strong electric field and application of even a small voltage at the
junction may rupture covalent bond and generate large number of charge carriers. Such sudden
increase in the number of charge carriers results in Zener break down.
Circuit Diagram:
Graph:
1. Take a graph sheet and divide it into 4 equal parts. Mark origin at the center of the graph sheet.
2. Now mark +ve X-axis as VF, -ve X-axis as VR, +ve Y-axis as IF and –ve Y-axis as IR.
3. Mark the readings tabulated for forward biased condition in first Quadrant and reverse biased
condition in third Quadrant.
Observations:
Forward Bias:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
Reverse Bias:
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
Results:
Cut in Voltage = _______________V
Reverse Breakdown Voltage = _____________V
Static Forward Resistance = ______________Ω
Dynamic Forward Resistance = _____________Ω
Static Reverse Resistance = ______________Ω
Dynamic Reverse Resistance = _____________Ω
Quiz:
1) Give applications of zener diode.
Suggested Reference:
3) David A. Bell, “Electronic Devices and Circuits”, Oxford University Press, Fifth edition
4) Albert Malvino & David, “Electronic Principles”, Tata McGraw-Hill, Seventh edition
References used by the students:
Clarity of
concepts and
record book
Knowledge
and
Understanding
Practical Skills
Experiment No:3
Half Wave Rectifier with and without Filter
Date:
Relevant CO: CO-1 : Analyze the general – and special-Purpose diode circuits
Objectives: 1) To perform an Experiment to Study rectification by one diode.
2) Observe input output waveforms for given circuits
3) Measure output voltage, frequency, ripple factor and efficiency of the circuits.
Equipment/Instruments: Trainer kit / ( PN junction Diode , Resistors , bread board) , function
generator, C.R.O., Patch cords, Digital Multimeters
Theory:
A rectifier is a circuit that converts a pure AC signal into a pulsating DC signal or a signal
that is a combination of AC and DC components.
A half wave rectifier makes use of single diode to carry out this conversion. It is named so as the
conversion occurs for half input signal cycle. During the positive half cycle, the diode is forward
biased and it conducts and hence a current flows through the load resistor. During the negative half
cycle, the diode is reverse biased and it is equivalent to an open circuit, hence the current through
the load resistance is zero. Thus the diode conducts only for one half cycle and results in a half
wave rectified output.
A rectifier is a circuit that converts a pure AC signal into a pulsating DC signal or a signal that is a
combination of AC and DC components. In DC supplies, a rectifier is often followed by a filter
circuit which converts the pulsating DC signal into pure DC signal by removing the AC
component. An L-section filter consists of an inductor and a capacitor connected in the form of an
inverted L. A - section filter consists of two capacitors and one induction in the form symbol pi.
Circuit Diagram:
Waveforms:
Safety and necessary Precautions:
1) Always keep power off while making connections.
2) Necessary care should be taken while working with ammeters , voltmeters and multimeters.
3) Before applying a signal to the C.R.O., make sure all the push buttons of control panel should
be in depressed condition.
Procedure:
1.Connect the circuit as shown in the fig.
2. Connect the multimeter across the 1kΩ load.
3. Measure the AC and DC voltages by setting multimeter to ac and dc mode respectively.
4.Calculate the ripple factor using the following formula.
Ripple factor ( γ ) = VAC/ VDC
Observations:
Half wave rectifier without filter
Calculations:
1) Ripple Factor (With and without filter) :
Results:
1) Ripple Factor without filter =____________ and with capacitor filter =_______
2) Rectification Efficiency without filter =____________ and with capacitor filter=_______
Conclusion:
Quiz:
1) Write the limitations of half wave rectifier.
2) Derive the value of ripple factor for half wave rectifier circuit.
Suggested Reference:
1) David A. Bell, “Electronic Devices and Circuits”, Oxford University Press, Fifth edition
2) Albert Malvino & David, “Electronic Principles”, Tata McGraw-Hill, Seventh edition
References used by the students:
Insert the marks according to observations ;
Category Novice (2) Developing (3) Proficient (4) Expert (5) Score
Clarity of
concepts and
record book
Knowledge and
Understanding
Practical Skills
Experiment No:4
Bridge Rectifier with and without Filter
Date:
Relevant CO: CO-1 : Analyze the general – and special-Purpose diode circuits
Objectives: 1) To perform an Experiment to Study rectification by four diodes.
2) Observe input output waveforms for given circuits
3) Measure output voltage, frequency, ripple factor and efficiency of the circuits.
Equipment/Instruments: Trainer kit / ( PN junction Diodes , Resistors , bread board) , function
generator, C.R.O., Patch cords, Digital Multimeters
Theory:
Another type of circuit that produces the same output as a full-wave rectifier is that of the
Bridge Rectifier. This type of single phase rectifier uses 4 individual rectifying diodes connected
in a "bridged" configuration to produce the desired output but does not require a special centre
tapped transformer, thereby reducing its size and cost. The single secondary winding is connected
to one side of the diode bridge network and the load to the other side as shown in figure. The 4
diodes labeled D1 to D4 are arranged in "series pairs" with only two diodes conducting current
during each half cycle. During the positive half cycle of the supply, diodes D1 and D2 conduct in
Fig. 1: Full-wave Bridge Rectifier series while diodes D3 and D4 are reverse biased and the current
flows through the load as shown below (Fig. 2). During the negative half cycle of the supply,
diodes D3 and D4 conduct in series, but diodes D1 and D2 switch of as they are now reverse
biased. The current flowing through the load is the same direction as before.
Ripple Factor: Ripple factor is defined as the ratio of the effective value of AC components
to the average DC value. It is denoted by the symbol ‘γ’.
Rectification Factor: The ratio of output DC power to input AC power is defined as
efficiency.
It is denoted by the symbol ‘η’
Circuit Diagram:
Waveforms:
Safety and necessary Precautions:
1) Always keep power off while making connections.
2) Necessary care should be taken while working with ammeters , voltmeters and multimeters.
3) Before applying a signal to the C.R.O., make sure all the push buttons of control panel should
be in depressed condition.
Procedure:
1.Connect the circuit as shown in the fig.
2. Connect the multimeter across the 1kΩ load.
3. Measure the AC and DC voltages by setting multimeter to ac and dc mode respectively.
4.Calculate the ripple factor using the following formula.
Ripple factor ( γ ) = VAC/ VDC
Observations:
Bridge rectifier without filter
Calculations:
1) Ripple Factor (With and without filter) :
Quiz:
1) Compare Full wave rectifier and Bridge rectifier.
2) Give the reason why bridge rectifier is used than full wave rectifier?
Suggested Reference:
1) David A. Bell, “Electronic Devices and Circuits”, Oxford University Press, Fifth edition
2) Albert Malvino & David, “Electronic Principles”, Tata McGraw-Hill, Seventh edition
References used by the students:
Category Novice (2) Developing (3) Proficient (4) Expert (5) Score
Clarity of
concepts and
record book
Knowledge and
Understanding
Practical Skills
Experiment No:5
Clamper Circuits
Date:
Clamper circuits consist of energy storage elements like capacitors. A simple clamper circuit
comprises of a capacitor, a diode, a resistor and a dc battery if required.
Clamper Circuit
A Clamper circuit can be defined as the circuit that consists of a diode, a resistor and a capacitor
that shifts the waveform to a desired DC level without changing the actual appearance of the
applied signal.
In order to maintain the time period of the wave form, the tau(τ) must be greater than, half the
time period (τ>T/2)
τ=RC
Where R is the resistance of the resistor employed
C is the capacitance of the capacitor used
The time constant of charge and discharge of the capacitor determines the output of a clamper
circuit.
In a clamper circuit, a vertical shift of upward or downward takes place in the output waveform
with respect to the input signal.
The load resistor and the capacitor affect the waveform. So, the discharging time of the capacitor
should be large enough.
Discharging time of the capacitor should be slow.
Vo = Vi + Vm
During the positive half cycle, the capacitor gets charged to its peak value vm. The diode is
forward biased and conducts. During the negative half cycle, the diode gets reverse biased and
gets open circuited. The output of the circuit at this moment will be
Vo = Vi + Vm
Circuit Diagram with Waveforms:
Quiz:
1) Draw the circuits for positive biased positive clamping and negative biased positive clamping.
2) Draw the circuits for positive biased negative clamping and negative biased negative clamping.
Suggested Reference:
1) David A. Bell, “Electronic Devices and Circuits”, Oxford University Press, Fifth edition
2) Albert Malvino & David, “Electronic Principles”, Tata McGraw-Hill, Seventh edition
References used by the students:
Category Novice (2) Developing (3) Proficient (4) Expert (5) Score
Clarity of
concepts and
record book
Knowledge and
Understanding
Practical Skills
Experiment No:6
Clipper Circuits
Date:
Relevant CO: CO-1 : Analyze the general – and special-Purpose diode circuits
Positive Clipper:
Negative Clipper:
Safety and necessary Precautions:
1) Always keep power off while making connections
2) Necessary care should be taken while working with ammeters , voltmeters and multimeters.
3) Before applying a signal to the C.R.O., make sure all the push buttons of control panel should
be in depressed condition.
Procedure:
1. Connect the circuit as shown in the fig.
2. Connect the function generator to the input of the circuit and give this signal to Ch. 1 of CRO .
3. Take the output from the load resistor and give this signal to Ch.l 2 of CRO.
4. Observe input output signals on CRO screen.
5. Draw the input output waveforms for both positive and negative (series and shunt) clipper
circuits.
Observations:
I/O waveforms of positive clipper I/O waveforms of negative clipper
(Series and shunt) (Series and shunt)
Conclusion:
Quiz:
1) Draw the circuits for biased (positive & negative) series positive clipping.
2) Draw the circuits for biased (positive & negative) shunt positive clipping.
3) Draw the circuits for biased (positive & negative) series negative clipping.
4) Draw the circuits for biased (positive & negative) shunt negative clipping.
Suggested Reference:
1) David A. Bell, “Electronic Devices and Circuits”, Oxford University Press, Fifth edition
2) Albert Malvino & David, “Electronic Principles”, Tata McGraw-Hill, Seventh edition
References used by the students:
Clarity of
concepts and
record book
Knowledge and
Understanding
Practical Skills
Experiment No: 7
7-segment static display system
Date:
Objectives:
1) To learn about various applications of decoder T
2) o learn and understand the working of IC 7447
3) To learn about types of seven-segment display
Theory:
The Light Emitting Diode (LED) finds its place in many applications in these modern
electronic fields. One of them is the Seven Segment Display. Seven-segment displays contains the
arrangement of the LEDs in “Eight” (8) passion, and a Dot (.) with a common electrode, lead
(Anode or Cathode). The purpose of arranging it in that passion is that we can make any number
out of that by switching ON and OFF the particular LED’s. Here is the block diagram of the Seven
Segment LED arrangement.
The Light Emitting Diode (LED), finds its place in many applications in this modern electronic
fields. One of them is the Seven Segment Display. Seven-segment displays contains the
arrangement of the LEDs in “Eight” (8) passion, and a Dot (.) with a common electrode, lead
(Anode or Cathode). The purpose of arranging it in that passion is that we can make any number
out of that by switching ON and OFF the particular LED’s. Here is the block diagram of the Seven
Segment LED arrangement.
Circuit Diagram:
PROCEDURE:
Conclusion:
Clarity of
concepts and
record book
Knowledge and
Understanding
Practical Skills
Experiment No: 8
Common Emitter BJT Characteristics
Date:
Objectives:
1) To perform an Experiment to Study Input Output characteristic of Common Emitter transistor
configuration .
2) Observe change in input parameters(V and I) by keeping output parameter constant.
3) Observe change in output parameters(V and I) by keeping input parameter constant.
Equipment/Instruments: Trainer kit / (BJT (BC 107) , Resistors , bread board) ,Regulated power
supply, Patch cords, Digital Multimeters
Theory:
The configuration in which the emitter is connected between the collector and base is
known as a common emitter configuration. The variation of Base current(IB) with Base-Emitter
voltage(VBE), keeping Collector Emitter voltage(VCE) constant gives input characteristics and
variation of collector current(IC) with Emitter-collector voltage(V CE), keeping Base current(IB)
constant gives output characteristics
Circuit Diagram:
Model graph :
Procedure:
TO FIND THE INPUT CHARACTERISTICS:
2. Keep VBB and VCC in zero volts before giving the supply
3. Set VCE = 1 volt by varying VCC and vary the VBB smoothly with fine control such that base current
IB varies in steps of 5μA from zero upto 200μA, and note down the corresponding voltage V BE for
each step in the tabular form.
3. Repeat the experiment for IB = 40μA and IB = 60μA, tabulate the readings.
Observations:
INPUT CHARACTERISTICS;
7
8
10
11
12
13
14
15
OUTPUT CHARACTERISTICS;
7
8
10
11
12
13
14
15
Graph:
Draw the graph for both input and output characteristics on separate graph paper.
Results:
1) Input Rsistance ri = ΔVBE / ΔIB = ___________Ω
2) Output Rsistance ro = ΔVCE / ΔIC =___________Ω
3) Current amplification factor ꞵ = ΔIc / ΔIb = _______
Conclusion:
Quiz:
1) Enlist the input output terminals for Common Emitter configuration of BJT.
4) What will be the biasing condition for Cut-off, Active and Saturation region of BJT.
Suggested Reference:
1) David A. Bell, “Electronic Devices and Circuits”, Oxford University Press, Fifth edition
2) Albert Malvino & David, “Electronic Principles”, Tata McGraw-Hill, Seventh edition
References used by the students:
Category Novice (2) Developing (3) Proficient (4) Expert (5) Score
Clarity of
concepts and
record book
Knowledge and
Understanding
Practical Skills
Experiment No:9
Common Base BJT Characteristics
Date:
Objectives:
1) To perform an Experiment to Study Input Output characteristic of Common Base transistor
configuration .
2) Observe change in input parameters(V and I) by keeping output parameter constant.
3) Observe change in output parameters(V and I) by keeping input parameter constant.
Equipment/Instruments: Trainer kit / (BJT (BC 107) , Resistors , bread board) ,Regulated power
supply, Patch cords, Digital Multimeters
Theory:
In CB Configuration, the base terminal of the transistor will be connected common between
the output and the input terminals. The variation of emitter current(I E) with Base-Emitter
voltage(VBE), keeping Collector Base voltage(VCB) constant gives input characteristics and
variation of collector current(IC) with Base-Collector voltage(VCB), keeping emitter current(IE)
constant gives output characteristics
Circuit Diagram:
Model graph :
Procedure:
TO FIND THE INPUT CHARACTERISTICS:
2. Keep VEE and VCC in zero volts before giving the supply
3. Set VCB = 1 volt by varying VCC. and vary the VEE smoothly with fine control such that emitter current
IE varies in steps of 0.2mA from zero upto 20mA, and note down the corresponding voltage V EB for
each step in the tabular form.
2. Set the IE = 1mA by using VEE such that, VCB changes in steps of 1.0 volts from zero upto 20 volts,
note down the corresponding collector current IC for each step in the tabular form.
3. Repeat the experiment for IE = 3mA and IE = 5mA, tabulate the readings.
INPUT CHARACTERISTICS;
10
11
12
13
14
15
OUTPUT CHARACTERISTICS;
10
11
12
13
14
15
Graph:
Draw the graph for both input and output characteristics on separate graph paper.
Results:
1) Input Rsistance ri = ΔVEB / ΔIE = ___________Ω
2) Output Rsistance ro = ΔVCB / ΔIC =___________Ω
3) Current amplification factor 𝜶 = ΔIc / ΔIe = _______
Conclusion:
Quiz:
1) Enlist the input output terminals for Common Base configuration of BJT.
Suggested Reference:
1) David A. Bell, “Electronic Devices and Circuits”, Oxford University Press, Fifth edition
2) Albert Malvino & David, “Electronic Principles”, Tata McGraw-Hill, Seventh edition
References used by the students:
Category Novice (2) Developing (3) Proficient (4) Expert (5) Score
Clarity of
concepts and
record book
Knowledge and
Understanding
Practical Skills
Experiment No:10
Transistor as a Switch
Date:
Objectives:
1) To make the load ON or OFF as per the switching effect of BJT.
2) To observe the required current to drive any application load.
Theory:
A transistor is a semiconductor device has three terminals emitter-base and collector. There are
many uses of this electronic component but most common is it used as switch and amplifier. Here,
we will have discuss use of tra nsistor or BJT as Switch, application, circuits and different
parameters related to it.
BJT as Switch
In the below figure the circuit shown explains the operation of BJT as a switch.
In the first circuit, the transistor is in the cutoff region because the emitter-base junction is not
forward biased condition.In this state, there is no connection between emitter and collector of a
transistor as shown like an open switch.
In the second circuit, a transistor is in a saturation state as both base-collector and the base-emitter
junction is in forward biased state. The value of base current is such large that it makes collector
current such level that transistor is in saturation state. In a saturation state, there is a short circuit
between emitter and collector as it is shown in a circuit like closes switch configuration.
In real, a minor voltage loss across the transistor of up to some 10th of a volt usually exits, that is
the saturation voltage, VCE(sat).
The state where both junctions of transistor base-emitter and base-collector are in reverses biased
condition called a cutoff mode of a diode. In this case voltage across the base-emitter is less that
does not allow current to flow from collector to emitter. In this state, VCE is equal to the VCC.
VCE(cutoff) = VCC
In this mode of operation, their base-emitter junction is in forward biased condition due to that
base current generated that results in the production of collector current.
IC(sat)=VCC-VCE(sat)/RC
The minimum value of the base current required to generated saturation is given here.
Usually, IB must be significantly larger than IB(min) to confirm that the transistor is saturated.
Circuit Diagram:
ON
OFF
Results:
1. Minimum Current IB required to ON the LED is ______________ mA
Conclusion:
Quiz:
1) Derive the equation for the output loop to find the output/ load current for NPN transistor.
2) Draw the circuit for transistor working as a switch to ON-OFF another device (except LED)
Suggested Reference:
1) David A. Bell, “Electronic Devices and Circuits”, Oxford University Press, Fifth edition
2) Albert Malvino & David, “Electronic Principles”, Tata McGraw-Hill, Seventh edition
References used by the students:
Category Novice (2) Developing (3) Proficient (4) Expert (5) Score
Clarity of
concepts and
record book
Knowledge and
Understanding
Practical Skills
Experiment No:11
Characteristics of FET
Date:
Equipment/Instruments: Trainer kit / (JFET BFW11 , Resistors , bread board) ,Regulated power
supply, Digital Multimeters, Connectors
Theory:
A JFET is called as Junction Field effect transistor. It is a unipolar device because the flow of
current through it is due to one type of carriers i.e., majority carriers where as a BJT is a Bi - Polar
device, It has 3 terminals Gate, Source and Drain. A JFET can be used in any of the three
configurations viz, Common Source, Common Gate and Common Drain. The input gate to source
junction should always be operated in reverse bias, hence input resistance R i = ∞, IG ≈ 0.
Pinch off voltage VP is defined as the gate to source reverse bias voltage at which the output
drain current becomes zero.
In CS configuration Gate is used as input node and Drain as the output node. A JFET in
CS configuration is used widely as an amplifier. A JFET amplifier is preferred over a BJT amplifier
when the demand is for smaller gain, high input resistance and low output resistance. Any FET
operation is governed by the following equation.
The drain current equation and trans-conductance is given as
Circuit Diagram:
Procedure:
Transfer Characteristics:
1) Connect the circuit as shown. All the knobs of the power supply must be at the minimum position
before the supply is switched on.
2) Adjust the output voltage VDS to 4V by adjusting the supply VDD.
3) Vary the supply voltage VGG so that the voltage VGS varies in steps of -0.25 V from 0 V onwards.
In each step note the drain current ID. This should be continued till ID becomes zero.
4) Repeat above step for VDS = 8 V.
5) Plot a graph between the input voltage V GS and output current ID for output voltage VDS in the
second quadrant. This curve is called the transfer characteristics.
Drain Characteristics:
1) Connect the circuit as shown in figure. Adjust all the knobs of the power supply to their minimum
positions before switching the supply on.
2) Adjust the input voltage VGS to 0 V by adjusting the supply VGG
3) Vary the supply voltage VDD so that VDS varies in steps of 0.5 V from 0 to 4 V and then in steps
of 1 V from 4 to 10 V. In each step note the value of drain current I D.
4) Adjust VGS to -1 and -2 V and repeat step-3 for each value of V GS.
5) Plot a graph between VDS and ID for different values of VGS. These curves are called drain
characteristics.
6) Mark the various regions in the drain characteristics graph and calculate the drain resistance.
Observations:
Transfer Characteristics:
VDS = 4V VDS = 6V
Graph:
1. Plot the drain characteristics by taking VDS on X-axis and ID on Y-axis at a constant VGS.
2. Plot the transfer characteristics by taking VGS on X-axis and taking ID on Y-axis at constant
VDS.
Model graph :
Transfer Characteristics Drain Characteristics
1. Drain Resistance (rd): It is given by the relation of small change in drain to source voltage ( V DS)
to the corresponding change in Drain Current ( ID) for a constant gate to source voltage ( V GS),
when the JFET is operating in pinch-off region.
2. Trans Conductance (gm): Ratio of small change in drain current ( ID) to the corresponding change
in gate to source voltage ( VGS) for a constant VDS.
Results:
1. Drain Resistance rd=_____________
2. Transconductance gm = ___________
3. Amplification Factor µ = _____________
Conclusion:
Quiz:
1) What are the advantages of FET?
3) What is transconductance?
Suggested Reference:
1) David A. Bell, “Electronic Devices and Circuits”, Oxford University Press, Fifth edition
2) Albert Malvino & David, “Electronic Principles”, Tata McGraw-Hill, Seventh edition
References used by the students:
Insert the marks according to observations ;
Category Novice (2) Developing (3) Proficient (4) Expert (5) Score
Clarity of
concepts and
record book
Knowledge and
Understanding
Practical Skills