American International University- Bangladesh

Faculty of Science and Technology (FST)

Electronic Devices

Fall 2024-2025

Section: Z, Group: 02

LAB REPORT - 05

Study of Transistor Characteristics in Common Emitter Amplifier

Supervised By

SADIA YASMIN

Submitted by

Name ID Contribution
1.M.Sakib Sadman Arian 23-54986-3 Experimental Data,
Abstract,Simulation
2. Jarin Tasnim 23-54985-3 Simulation,Procedure,
Discussion
3. Md Tahsin Ur Rahman 23-54884-3 Analysis, Simulation
4. Asmaul Husna 23-54988-3 Theory, Data Table
5. Salman Arefin 22-47262-1 Data Table

Date of Submission : 26 November 2024

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Title of the Experiment: Study of Transistor Characteristics in Common Emitter Amplifier.

Abstract:

This experiment is about learning how transistors work. We’re going to use a special kind of transistor called a
Bipolar Junction Transistor (BJT). We'll connect it in a way called a Common Emitter (CE) Amplifier.
We'll test how the transistor works by looking at its input and output signals. Transistors can work in three
different ways: active, cutoff, and saturation. To make a good amplifier, we need the transistor to be in the active
mode. For other uses, like digital circuits, it can switch between cutoff and saturation.

Theory:
A Bipolar Junction Transistor (BJT) is a three-terminal semiconductor device. It is widely used in discrete circuits
as well as in integrated circuits. The main applications of BJ’s are analog circuits. For example, BJTs are used for
amplifiers, for high-speed amplifiers. BJTs can be used for digital circuits as well, but most of the digital circuits
are nowadays realized by field effect transistors (FETs).
There are three operating modes for BJTs, the active mode (amplifying mode), the cut-off mode, and the saturation
mode. To apply a BJT as an amplifier, the BJT must operate in active mode. To apply a BJT as a digital circuit
element, the BJT must be operated in the cut-off and the saturation modes.

Device Structure of BJT:

Each BJT consists of two anti-serial connected diodes. The BJT can be either implemented as an npn or a pnp
transistor. In both cases, the center region forms the base (B) of the transistor, while the external regions form the
collector (C) and the emitter (E) of the transistor. External wire connections to the p and n regions (transistor
terminals) are made through metal (e.g., Aluminum) contacts. A cross-section of the two types of BJTs consisting
of an emitter-base junction and a collector-base junction is shown in Fig. 1.
An npn or a pnp transistor is called a bipolar transistor because both types of carriers (electrons and holes)
contribute to the overall current. In the case of a field effect transistor, either the electronics or the holes determine
the current flow. Therefore, a field effect transistor is a unipolar device. The current and voltage amplification of
a BJT is controlled by the geometry of the device (for example width of the base region) and the doping
concentrations in the individual regions of the device. To achieve a high current amplification, the doping
concentration in the emitter region is typically higher than that of the base region. The base is a lightly doped very
thin region between the emitter and the collector and it controls the flow of charge carriers from the emitter to the
collector region.

Figure 1: Construction diagram of an npn and a pnp transistors.

Circuit Configuration:
Figure 2 shows the symbol for the npn transistor and pnp transistor. The emitter of the BJT is always marked by
an arrow, which indicates whether the transistor is an npn or a pnp transistor

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 Figure 2: Emitter, collector, and base of transistors and the connection modes.

There are three basic ways in which a BJT can be configured. In each case, one terminal is common to both the
input and output circuits shown in the figure above.
1. The common emitter configuration is used for voltage and current amplification and is the most common
configuration for transistor amplifiers.
2. The common collector configuration is often called an emitter follower since its output is taken from the
emitter resistor. It is useful as an impedance-matching device since its input impedance is much higher
than its output impedance.
3. The common base configuration is used for high-frequency applications because the base separates the
input and output, minimizing oscillations at high frequencies. It has a high voltage gain, relatively low
input impedance, and high output impedance compared to the common collector.

Biasing of Bipolar Junction Transistors:

In most cases, the BJT is used as an amplifier or switch. To perform these functions, the transistor must be
correctly biased. Depending on the bias condition (forward or reverse) of each of the BJT junctions, different
modes of operation of the BJT are obtained.
The three modes are defined as follows:
1. Active Mode: The emitter junction is forward-biased and the collector junction is reverse-biased. If the
BJT is operated in active mode, then the BJT can be used as an amplifier.
2. Saturation Mode: Both the emitter and collector junctions are forward-biased. If the BJT is used as a
switch, the saturation mode corresponds to the on-state of the BJT.
3. Cut-off Mode: Both the emitter and collector junction are reverse-biased. If the BJT is used as a switch,
the cut-off mode corresponds to the off state of the BJT.

Input and Output Characteristics:

The input characteristics curves are plotted between IB and VBE keeping the voltage, VCE constant. The input
characteristics look like the characteristics of a forward-biased diode. The base-to-emitter voltage varies only
slightly. The input dynamic resistance is calculated from the ratio of the small change of base-to-emitter voltage
to the small change of base current.
The output characteristics curves are plotted between the collector current, IC, and the collector-to-emitter voltage
drop by keeping the base current, IB constant. These curves are almost horizontal. The output dynamic resistance
again can be calculated from the ratio of the small change of emitter-to-collector voltage drop to the small change
of the collector current.

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 Figure 3: BJT Common Emitter Input Characteristics.

Figure 4: BJT Common Emitter Output Characteristics.

Apparatus:
SL# Apparatus Quantity
1 BJT (2N2222, C828) 1
2 Resistance (1 k 10 k 0 k) 1 each
4 Project Board 1
7 DC milliammeter (0-50 mA) 1
8 DC microammeter (0-500 A) 1
9 Multimeter 1
10 Connecting Leads 10
Precaution:

1. A transistor should never be removed or inserted into a circuit with voltage applied.
2. A replacement transistor should be ensured to be inserted into a circuit in the correct direction.
3. Transistors are sensitive to being damaged by electrical overloads, heat, humidity, and radiation. Damage of
this nature is often caused by applying the incorrect polarity voltage to the collector circuit or excessive
voltage to the input circuit.
4. One of the most frequent causes of damage to a transistor is electrostatic discharge from the human body
when the device is handled.
5. The applied voltage and current should not exceed the maximum rating of the given transistor.

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Experimental Procedures:
1. The actual values of the 1 kW and 10 kW resistors should be measured.
2. The terminals of the transistor should be identified, and the value of Beta (b) should be recorded.
3. The circuit should be connected as shown in Fig. 5. The microammeter and milliammeter should be
connected as shown in Fig. 5.
4. The multimeter (voltmeter mode) should be connected to measure the base resistance voltage (VB)
and input voltages (VBE).
5. Both DC power supplies should be turned on with the voltage control knob at 0 V.
6. The voltage control knob of the supply voltage, VCC, should be rotated from 0 to +10 V and
gradually fixed to get a constant collector-to-emitter voltage, VCE.
7. For input characteristics, the DC supply voltage, VBB, should be varied, and the base current, IB,
should be calculated using equation (1).
8. The input voltage (VBE) and current (IB) should be measured and recorded in Table 1.
9. The voltage control knob of the supply voltage, VCC, should be rotated from +10 to +16 V and
gradually fixed to get a constant collector-to-emitter voltage, VCE.
10. Steps 7 and 8 should be repeated.
11. All measured data should be recorded in Table 1.
12. Images of the circuit diagram should be recorded.
13. The DC power supply should be turned off.
14. The IB - VBE characteristic curve for the BJT should be plotted.
15. The knee voltage and static and dynamic resistance of the BJT should be determined.

Circuit Diagram:

Figure 5: Circuit diagram for the determination of CE transistor characteristics

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 Table 1 Data for the input characteristic, IB -VBE Curve

Collector Supply Voltage, VCC = +10 V Collector Supply Voltage, VCC = +16 V
Source
Base-to-Emitter Base Resistor Base Current, Base-to-Emitter Base Resistor Base Current,
Voltage,
VBB (V) Voltage, VBE (V) Voltage, VB (V) IB (mA) Voltage, VBE (V) Voltage, VB (V) IB (mA)
0 0.0054 0.0013 .000132 0.0049 0.0057 0.0005816

0.2 0.197 0.0058 .000593 0.115 0.0015 0.0001530

0.4 0.352 0.0083 .000848 0.382 0.0137 0.001400

0.6 0.547 0.0094 .000961 0.526 0.0158 0.0016155

0.8 0.647 0.088 0.008997 0.657 0.125 0.01278

1.5 0.707 0.786 0.080368 0.712 0.719 0.0735

2.0 0.708 1.202 0.122903 0.729 1.240 0.1267

2.5 0.713 1.724 0.176278 0.730 1.726 0.1764

3.0 0.715 2.263 0.231390 0.731 2.192 0.2241

1. The actual values of the 1 kW and 10 kW resistors should be measured.

2. The circuit should be connected as shown in Fig. 5.
3. The multimeter (voltmeter mode) should be connected to measure the base resistance voltage (VB) and collector
resistance voltage (VC). The microammeter and milliammeter should be connected as shown in Fig. 5.
4. Both DC power supplies should be turned on with the voltage control knob at 0 V.
5. First, the input circuit should be opened (i.e., to make IB = 0).
6. The collector supply voltage, VCC, should be varied by rotating the voltage control knob of the supply voltage in
steps of 0.2 V from 0 V to +1 V and then in steps of 2 V from 1 V to +16 V. The collector current, IC, should be
calculated using equation (2). This collector current value should be noted from the milliammeter reading.
7. VCC should be varied gradually until a constant collector current, i.e., collector saturation current (IC,sat), is
obtained for all collector-to-emitter voltages, VCE. This data should be filled in the table as indicated in Table 2.
8. Now, the input circuit should be closed, and the base current, IB, should be fixed at 50 μA and 100 μA by varying
VBB. The base current, IB, should be calculated using equation (1). This base current value should be noted from the
microammeter reading.
9. Steps 6-8 should be repeated.
10. All measured data should be recorded in Table 2.
11. Images of the circuit diagram should be recorded.
12. The DC power supply should be turned off.
13. The IC - VCE characteristic curve for the BJT should be plotted.
14. The collector saturation voltage and current, VCE,sat and IC,sat, should be determined for each output
characteristic curve.

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 Table 2 Data for the input characteristic, IC -VCE Curve

Base Current, IB = 0 A Base Current, IB = 50 A Base Current, IB = 100 A

Collector- Collector Collector- Collector Collector- Collector
Source Collector Collector Collector
to-Emitter Resistor to-Emitter Resistor to-Emitter Resistor
Voltage, Current, Current, Current,
Voltage, Voltage, Voltage, Voltage, Voltage, Voltage,
VCC (V) VCE (V) VC (V) IC (mA)
VCE (V) VC (V) IC (mA)
VCE (V) VC (V) IC (mA)
0.0 0.0058 0 0 0.0064 0.006 0.00612 0.0065 0.0061 0.0062

1.0 0.963 0 0 0.0608 0.928 00.946 0.039 0.191 0.194

2.0 1.97 0 0 0.0819 1.84 1.877 0.058 1.956 1.995

4.0 3.95 0 0 0.112 3.84 3.918 0.080 3.89 3.969

6.0 5.99 0 0 0.139 5.8 5.918 0.098 5.86 5.979

8.0 7.96 0 0 0.173 7.77 7.928 0.144 7.82 7.97

10.0 10.1 0 0 0.261 9.72 9.918 0.131 9.82 10.02

12.0 11.97 0 0 0.603 11.41 11.64 0.151 11.87 12.11

Table 1 : Experimental Data Curve

Table 2 : Experimental Data Curve

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Simulation Table 1 (a)

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Simulation Table 1(b)

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Simulation Table 2 (a)

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Simulation Table 2 (b)

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Simulation Table 2 (c)

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 Table 1 Simulation Data for the input characteristic, IB -VBE Curve

Collector Supply Voltage, VCC = +10 V Collector Supply Voltage, VCC = +16 V
Source
Base-to-Emitter Base Resistor Base Current, Base-to-Emitter Base Resistor Base Current,
Voltage,
VBB (V) Voltage, VBE (V) Voltage, VB (V) IB (mA) Voltage, VBE (V) Voltage, VB (V) IB (mA)
0 0.000000131 0.000000146
0.000000131 0 0.000000146 0
0.2 0.0000018 0.0000018
0.199 0.000027 0.199 0.000027
0.4 0.000015 0.000015
0.399 0.000055 0.399 0.000055
0.6 0.000011 0.011
0.588 0.0011 0.588 0.0011
0.8 0.000143 0.143
0.656 0.014 0.656 0.014
1.0 0.321 0.312
0.678 0.032 0.678 0.032
1.5 0.810 0.796
0.689 0.08 0.703 0.079
2.0 1.31 1.296
0.69 0.13 0.703 0.129
2.5 1.81 1.796
0.69 0.18 0.703 0.178
3.0 2.309 2.296
0.69 0.23 0.704 0.229

Table 1 : Simulated Data Curve

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 Table 2 simulation Data for the input characteristic, IC -VCE Curve

Base Current, IB = 0 A Base Current, IB = 50 A Base Current, IB = 100 A

Collector- Collector Collect Collector Collector- Collector
Source Collector Collector Collector
to-Emitter Resistor or- to- Resistor to-Emitter Resistor
Voltage, Current, Current, Current,
Voltage, Voltage, Emitter Voltage, Voltage, Voltage,
VCC (V) VCE (V) VC (V) IC (mA) IC (mA)
VC (V) IC (mA)
Voltage VC (V) VCE (V)
,
VCE
(V)
0.0 0 0 0 0.006 0.0169 0.0169 0.0172 0.0061 0.0172

1.0 0.999 0.00000101 0.000111 0.096 0.903 0.903 0.0706 0.191 0.929

2.0 2 0.00000201 0.000222 0.121 1.879 1.879 0.0899 1.956 1.91

4.0 4 0.00000402 0.000444 0.154 3.845 3.846 0.112 3.89 3.888

6.0 6 0.00000603 0.000888 0.190 5.81 5.81 0.129 5.86 5.872

8.0 8 0.00000803 0.000888 0.318 7.681 7.682 0.143 7.82 7.858

10.0 10 0.00001004 0.00177 2.12 7.88 7.88 0.157 9.82 9.845

12.0 12 0.00001205 0.00177 3.979 8.021 8.022 0.171 11.87 11.829

Table 2 : Simulated Data Curve

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Discussion & Conclusion:
The purpose of this experiment was fulfilled which was study of transistor characteristics in common emitter amplifier. In this
experiment transistor input and output characteristic was analyst and learn. For experimental data a circuit was constructed in
breadboard. For simulations a similar type of transistor. Both of the transistor has same characteristic. In this experiment
3regions of transistor was learned which are- active region, saturation region and cutoff region.Graph of Base current VS Base
emitter current, collector current VS base current are plotted and understood. There was a very little difference in experimental
values compared to the simulations data.

References:
[1] Robert L. Boylestad, Louis Nashelsky, Electronic Devices and Circuit Theory, 9th Edition, 2007-2008
[2] Adel S. Sedra, Kenneth C. Smith, Microelectronic Circuits, Saunders College Publishing, 3rd ed., ISBN: 0-03-
051648-X, 1991.
[3] American International University–Bangladesh (AIUB) Electronic Devices Lab Manual.
[4] David J. Comer, Donald T. Comer, Fundamentals of Electronic Circuit Design, John Wiley & Sons Canada, Ltd.,
ISBN: 0471410160, 2002.
[5] Resistor values: https://www.eleccircuit.com/how-to-basic-use-resistor/, accessed on 20 September 2023.

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