MBRS1100T3G,

SBRS81100T3G,
MBRS190T3G,
SBRS8190T3G

Schottky Power Rectifier

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Surface Mount Power Package
SCHOTTKY BARRIER
Schottky Power Rectifiers employ the use of the Schottky Barrier
principle in a large area metal-to-silicon power diode. State-of-the-art
RECTIFIER
geometry features epitaxial construction with oxide passivation and 1.0 AMPERE
metal overlay contact. Ideally suited for low voltage, high frequency 90, 100 VOLTS
rectification, or as free wheeling and polarity protection diodes, in
surface mount applications where compact size and weight are critical
to the system. These state-of-the-art devices have the following
features:

Features SMB
• Small Compact Surface Mountable Package with J-Bend Leads CASE 403A

• Rectangular Package for Automated Handling

• Highly Stable Oxide Passivated Junction MARKING DIAGRAM
• High Blocking Voltage − 100 Volts
• 175°C Operating Junction Temperature AYWW
• Guardring for Stress Protection B1xG
G
• AEC−Q101 Qualified and PPAP Capable
• These are Pb−Free Devices
B1 = Device Code
Mechanical Characteristics
x = C for MBRS1100T3
• Case: Epoxy, Molded 9 for MBRS190T3
• Weight: 95 mg (approximately) A = Assembly Location**
Y = Year
• Finish: All External Surfaces Corrosion Resistant and Terminal WW = Work Week
Leads are Readily Solderable G = Pb−Free Package
• Lead and Mounting Surface Temperature for Soldering Purposes: (Note: Microdot may be in either location)
260°C Max. for 10 Seconds **The Assembly Location code (A) is front side
• Shipped in 12 mm Tape and Reel, 2,500 units per reel optional. In cases where the Assembly Location is
stamped in the package, the front side assembly code
• Cathode Polarity Band may be blank.

ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.

© Semiconductor Components Industries, LLC, 2015 1 Publication Order Number:

January, 2018 − Rev. 13 MBRS1100T3/D
 MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G

MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM V
Working Peak Reverse Voltage VRWM
DC Blocking Voltage VR
MBRS190T3 90
MBRS1100T3 100
Average Rectified Forward Current IF(AV) A
TL = 163°C 1.0
TL = 148°C 2.0
Non−Repetitive Peak Surge Current IFSM A
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 50

Operating Junction Temperature (Note 1) TJ −65 to +175 °C

Voltage Rate of Change dv/dt 10 V/ns
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance − Junction−to−Lead (TL = 25°C) RqJL 22 °C/W

ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2) (iF = 1.0 A, TJ = 25°C) VF 0.75 V
Maximum Instantaneous Reverse Current (Note 2) IR mA
(Rated dc Voltage, TJ = 25°C) 0.5
(Rated dc Voltage, TJ = 100°C) 5.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

ORDERING INFORMATION
Device Marking Package Shipping†
MBRS1100T3G B1C SMB 2500 / Tape & Reel
(Pb−Free)

SBRS81100T3G* B1C SMB 2500 / Tape & Reel

(Pb−Free)

SBRS81100T3G−VF01* B1C SMB 2500 / Tape & Reel

(Pb−Free)

MBRS190T3G B19 SMB 2500 / Tape & Reel

(Pb−Free)

SBRS8190T3G* B19 SMB 2500 / Tape & Reel

(Pb−Free)

SBRS1100T3G B19 SMB 2500 / Tape & Reel

(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*SBRS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

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 MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G

i F, INSTANTANEOUS FORWARD CURRENT (AMPS)

TYPICAL ELECTRICAL CHARACTERISTICS

20 1k
10 400
200
TJ = 150°C TJ = 150°C

I R , REVERSE CURRENT ( μA)

5 100
40 125°C
2 20
100°C 10 100°C
1
4
0.5 25°C 2
1
0.2 0.4
0.2
0.1 0.1
0.05 0.04
0.02 25°C
0.02 0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 10 20 30 40 50 60 70 80 90 100
vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current*

*The curves shown are typical for the highest voltage device in the voltage
grouping. Typical reverse current for lower voltage selections can be estimated
from these curves if VR is sufficient below rated VR.
PF(AV), AVERAGE POWER DISSIPATION (WATTS)

3.2 2.0
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)

2.8
TJ = 100°C DC
2.4 1.5

2.0
SQUARE
1.6 WAVE 1.0 SQUARE
WAVE
1.2 DC

0.8 0.5

0.4

0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 145 150 155 160 165 170 175 180
IF(AV), AVERAGE FORWARD CURRENT (AMPS) TL, LEAD TEMPERATURE (°C)
Figure 3. Power Dissipation Figure 4. Current Derating, Lead

280
260
240 NOTE: TYPICAL CAPACITANCE
220 NOTE: AT 0 V = 270 pF
200
C, CAPACITANCE (pF)

180
160
140
120
100
80
60
40
20
0
0.1 0.2 0.5 1 2 5 10 20 50 100
VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Typical Capacitance

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 MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G

PACKAGE DIMENSIONS

SMB
CASE 403A−03
ISSUE J

HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
E 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.

MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
A 1.95 2.30 2.47 0.077 0.091 0.097
b D A1 0.05 0.10 0.20 0.002 0.004 0.008
b 1.96 2.03 2.20 0.077 0.080 0.087
c 0.15 0.23 0.31 0.006 0.009 0.012
D 3.30 3.56 3.95 0.130 0.140 0.156
E 4.06 4.32 4.60 0.160 0.170 0.181
POLARITY INDICATOR HE 5.21 5.44 5.60 0.205 0.214 0.220
OPTIONAL AS NEEDED
L 0.76 1.02 1.60 0.030 0.040 0.063
L1 0.51 REF 0.020 REF

A1
L L1 c

SOLDERING FOOTPRINT*

2.261
0.089

2.743
0.108

2.159
0.085 SCALE 8:1 ǒinches
mm Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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