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FACULTY of MECHANICAL ENGINEERING

The laboratory report focuses on the characteristics and applications of Bipolar Junction Transistors (BJTs), specifically the 2N3904 NPN transistor. It details the experiment's objectives, procedures, and results, highlighting the transistor's operation in different regions and its effectiveness as an electronic switch. The findings align with theoretical expectations and suggest areas for improvement in future experiments.

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19 views8 pages

FACULTY of MECHANICAL ENGINEERING

The laboratory report focuses on the characteristics and applications of Bipolar Junction Transistors (BJTs), specifically the 2N3904 NPN transistor. It details the experiment's objectives, procedures, and results, highlighting the transistor's operation in different regions and its effectiveness as an electronic switch. The findings align with theoretical expectations and suggest areas for improvement in future experiments.

Uploaded by

Vicky Amg
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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FACULTY of MECHANICAL ENGINEERING & TECHNOLOGY

MMJ32803 – ELECTRONICS AND


MICROPROCESSOR

SEMESTER II

ACADEMIC SESSION 2023/2024

LABORATORY REPORT 1

BIPOLAR JUNCTION TRANSISTOR

Date of laboratory 6 May 2025

Name Vigneswaran A/L Thinagaran

Matrix Number 221112927

Program UR6521001 (RK08)

Instructor/Lecturer Dr. Mariam Majid


MARKS
Introduction

The Bipolar Junction Transistor ( B.JT ) is build up with three


doped semiconductor regions separated by two pn junction called
emitter, base, and collector. One type consists of two n regions
separated by a p region ( NPN ), and the other type consists of two p
regions separated by an n region as illustrated in Figure 1. The term
bipolar refers to the use of both holes and electrons as carriers in the
transistor structure.

c
Collector

2N3904
NPN General Purpose
Amplifier

E = EMITTER
C = COLLECTOR
B = BASE
Figure 1: Basic BJT construction, symbols and transistor.

When a transistor is connected to dc bias voltages, such as shown in Figure 2 for


both types, VBB forward-biases the base emitter junction and Vcc reverse-biases
the base-collector junction. For example, Vcc is normally taken directly from the
power supply output and VBB, which is smaller, can be produced with a voltage
divider. The overall view for the transistor operation is as illustrated in Figure 3.

Figure 2(a): pnp transistor


Objectives
1.To find out the characteristic of BJT such as the regions of operations,
parameters Abc, Bbc, VBE and VCE

2.To apply BJT as an electronic switch.

Components
1. 2N3904 NPN Transistor
2. Resistors
5ΚΩ
1ΜΩ
1ΚΩ
560ΚΩ
3. Power supply (PS)
4.Breadboard
5.LED
6.Digital Multi Meter
7.Jumper wire

Procedure
BJT characteristic and parameter

Vcc=5V

VBB

Figure 4: Schematic diagram


1.Wire up the circuit as shown in Figure 4 with transistor 2N3904, Rc = 5k, RB=
1MQ and Vcc= 5V.

2.Increase VBe until Ic = 0.5mA. Find out VcB and VBE

3. Measure Ic, VCB, and VBE using DMM. To measure lc, tap positive DMM
pointer to input and negative pointer to 5k resistor. [To measure VCB, tap positive
DMM pointer to the collector and the negative pointer to the base. To measure
VBE, tap positive DMM pointer to the base and the negative pointer to the
emitter.]

4.Measure IB, the base current and compare the result to the collector current.
Calculate ẞ and а. [Note that to measure IB, tap the positive DMM pointer VBB
and negative pointer to 1MO resistor.]

5.Keeр the VBB maintain, vary Vec from OV to 6V while tap positive DMM to
the collector and negative pointer to the emitter to measure VCE [Measure le by
using the same way in step 5.1.3.]

6. Record the result in Table 2 and plot le vs VCE in Graph 1.

BJT as a switch.

1.5v
560KΩ
1.Using the 2N3904 you had used before, build up a circuit as shown in Figure 5.
2.Apply PS (Power Supply) voltage from 1 V to 5 V to the circuit. Measure VBE
while you simultaneously increase the voltage.
3.Record O your results in Table 3. [Note that the correct measurement way is very
important to get the right values.]
4.Make your observation on LED light. Record the observation in Table 3 [(off/
on/ dimmer / dim / bright /brighter).]
Graph 1: IcVS VCE

Ic(mA) vs Vce(V)
250

200

150

100

50

0
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17

Ic(mA) Vce(V)
Discussion
BJT Characteristics and Parameters:

1. Regions of Operation:
The BJT operates in three regions: cutoff, active, and saturation. In the active
region, the transistor functions as an amplifier, where V BE ≈ 0.7 V (for silicon
transistors) and I C =β DC I B. In the saturation region, both junctions are forward-
biased, and V CE is minimal ≈ 0.2 V , allowing the transistor to act as a closed
switch. The cutoff region occurs when V BE 0.7 V , turning the transistor off.

2. Measurements and Calculations:


The experiment involved measuring I C, I B, V BE, and V CB to calculate β DC and α DC . The
theoretical relationship I E =I B + I C was verified, and the values of β DC and α DC were found
to align with typical ranges (20–200 for β DC and 0.95–0.99 for α DC ).
The plot of I C vs V CE demonstrated the transistor's behavior in the active and saturation
regions. Initially, I C increased with V CE , but once the transistor reached saturation, I C
remained relatively constant despite further increases in V CE .

3. Discrepancies and Errors:


o Minor discrepancies between experimental and theoretical values may have arisen
due to resistor tolerances, inaccuracies in the multimeter, or variations in the
transistor's characteristics. For example, V BE might not have been exactly 0.7 V
due to temperature effects or manufacturing tolerances.

BJT as an Electronic Switch:

1. Switching Behavior:
When the BJT was used as a switch, the LED's state (off/on) depended on the
base-emitter voltage V BE. Below V BE ≈ 0.7 V , the transistor remained in the cutoff
region, and the LED was off. As V BE exceeded the threshold, the transistor
entered the saturation region, allowing significant collector current to flow and
turning the LED on.The brightness of the LED increased with higher V BEand I C
confirming the transistor's ability to control current flow.
Conlusion

The experiment successfully demonstrated the fundamental characteristics of the


BJT, including its operation in different regions and its application as a switch. The
measured parameters ( β DC , α DC ,V BE ,V CE ¿aligned well with theoretical expectations,
and the switching behavior was clearly observed. Potential improvements could
include using more precise measurement tools or repeating the experiment under
controlled temperature conditions to minimize errors. Overall, the lab provided
valuable insights into the practical applications of BJTs in electronic circuits.

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