Module 2 Lecture 3
Module 2 Lecture 3
Answer:
3-2 Current Density
Streamlines representing
current density in the flow
of charge through a
constricted conductor.
3-2 Current Density
Conduction
electrons are
actually moving
to the right but
the conventional
current i is said to
move to the left.
Current is said to be due to positive charges that are propelled by the electric
field. In the figure, positive charge carriers drift at speed vd in the direction of
the applied electric field E which here is applied to the left. By convention, the
direction of the current density J and the sense of the current arrow are drawn
in that same direction, as is the drift speed vd.
The drift velocity vd is related to the current density by
Here the product ne, whose SI unit is the coulomb per cubic meter (C/m3), is
the carrier charge density.
3-3 Resistance and Resistivity
If we apply the same potential difference between the ends of geometrically similar
rods of copper and of glass, very different currents result. The characteristic of the
conductor that enters here is its electrical resistance. The resistance R of a
conductor is defined as
where V is the potential difference across the conductor and i is the current through
the conductor. Instead of the resistance R of an object, we may deal with the
resistivity ρ of the material:
I~V or I = V/R
A Microscopic View
The assumption that the conduction electrons in
a metal are free to move like the molecules in a
gas leads to an expression for the resistivity of a
metal:
or,
3-5 Power, Semiconductors, Superconductors
Semiconductors are materials that have few conduction electrons but can become
conductors when they are doped with other atoms that contribute charge carriers.
In a semiconductor, n (number of free
electrons) is small (unlike conductor) but
increases very rapidly with temperature as
the increased thermal agitation makes
more charge carriers available. This
causes a decrease of resistivity with
increasing temperature, as indicated
by the negative temperature coefficient
of resistivity for silicon in Table 26-2.