Micro and Nanostructures 199 (2025) 208081

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Micro and Nanostructures

journal homepage: www.journals.elsevier.com/micro-and-nanostructures

Ultra-wide range infrared photodetector based on BP/

MoSe2 heterojunction
Beiyun Liu a,**, Chengjie Zhi a , Guanxia Dai b, Boxing An c,* , Feihong Chu b,
Jicheng Mo a , Xiuyan Zhang a
a
School of Science, Guangxi University of Science and Technology, Liuzhou, Guangxi, 545006, China
b
Department of Electrical Engineering, Hebei Vocational University of Technology and Engineering, Xingtai, Hebei, 054000, China
c
Panjin Institute of Industrial Technology, Dalian University of Technology, Research Laboratory of Energy and Environment, Panjin, Liaoning,
124221, China

A R T I C L E I N F O A B S T R A C T

Keywords: Two-dimensional (2D) materials based photodetectors is a hot research field in recent years,
2D materials especially black phosphorus (BP), which has been favored by researchers due to its benign
dry transfer method properties of direct bandgap and bandgap of only 0.3 eV. However, devices based on BP only have
pn junction
low photoresponsivity and the material is prone to degradation, which is not conducive to their
Infrared photodetector
research in photodetectors. We constructed a BP and molybdenum molybdenum diselenide
(MoSe2) heterojunction photodetector by depositing electrodes and then transferring materials
using a dry transfer method. A pn junction is formed by p-type BP and n-type MoSe2, which
generates a built-in electric field that helps to separate the photogenerated electron-hole pairs and
improve the efficiency of photo detection. The device has a maximum photoresponsivity and
specific detectivity of 0.167 A/W and 1.2 × 1010 Jones at Vds = 1 V, Vg = 0 V. The range of photo
detection can be from 450 to 2400 nm. Our work has a positive impact on the research of two-
dimensional material heterojunctions for infrared photodetectors.

1. Introduction

The 2D layered materials, such as graphene and transition metal di-chalcogenides (TMDs), have opened a new era for optoelec­
tronic devices thanks to their excellent transport and optical properties [1–11]. Among them, layered BP received widespread
attention from researchers, which can be exfoliated from bulk counterpart [12]. A p-type field effect transistor was prepared by layered
BP with a mobility of up to 1000 cm2/V⋅s, which indicates that BP has great potential for application in high performance electronic
devices [13]. Meanwhile, due to its tunable direct bandgap from 0.3 eV (multilayer) to 1.5 eV (single layer), BP is an ideal material for
preparing infrared photodetectors [14–16]. However, Studies have shown that the responsivity of photodetectors prepared with few
layers of BP is only a few or a few tens of mA/W owing to weak light absorption [4]. Some studies have shown that the responsivity of
BP based photodetector can reach 104 A/W, but this result was achieved by applying a 50 V gate voltage to regulate the Fermi level
[17]. Then, a BP based photodetector deposited Ni/Au metal electrodes was prepared. At a temperature of 20 K, the interface and
volume traps were frozen and phonon scattering was reduced of this device, resulting to ultra-high responsivity of 7 × 106 A/W [18].

* Corresponding author.
** Corresponding author.
E-mail addresses: [email protected] (B. Liu), [email protected] (B. An).

https://doi.org/10.1016/j.micrna.2025.208081
Received 6 November 2024; Received in revised form 23 January 2025; Accepted 26 January 2025
Available online 28 January 2025
2773-0123/© 2025 Published by Elsevier Ltd.
B. Liu et al. Micro and Nanostructures 199 (2025) 208081

Unfortunately, under actual operation conditions, it is difficult to achieve a high gate voltage or very low temperature for a common
device.
Subsequently, it is realized that 2D materials have smooth surfaces and no dangling bonds, which can be directly stacked to
construct heterojunctions without considering lattice mismatch [19–24]. Therefore, stacking the BP of p-type carriers and TMDs of
n-type carriers together to form a pn junction has become a new direction for constructing high performance photodetectors [25–28].
Owing to the presence of built-in electric fields, it is beneficial for the separation of photogenerated electron-hole pairs, thereby
improving the detection efficiency of devices. For example, in the absence of gate voltage, the photodetector composed of BP/MoS2
achieves a photo responsivity of 418 mA/W, which has higher responsivity than BP only photodetector [25]. Then, by introducing
surface acoustic waves, charge carriers can be quickly driven out of the depletion region, these kind of BP/MoS2 based photodetector
can achieve a responsivity of 2.17 A/W [26]. Nevertheless, these works are lack of sufficient research in infrared detection.
Besides, it should be noted that that BP is easily degraded, especially after UV exposure. It is because the BP band edge overlaps
with the oxygen receptor energy level, making it easy to form p-o bonds [29]. Therefore, most devices based on BP are currently
prepared using electron beam exposure, which increases the cost of preparation and is not suitable for future industrial production.
Therefore, it is necessary to explore novel BP based pn junction photodetectors.
In this work, we constructed a 2D material heterojunction photodetector based on BP/MoSe2, which is prepared electrodes on the
substrate through UV exposure first, and then peeling and transferring the two-dimensional material. This method successfully avoids
the degradation of BP under UV exposure and more suitable for industrial production than electron beam exposure. The built-in
electric field formed by PN junction composed of BP and MoSe2 enables rapid separation of electron hole pairs. It enables our de­
vice to have excellent photo responsive efficiency which has a maximum photoresponsivity and specific detectivity of 0.167 A/W and
1.2 × 1010 Jones at Vds = 1 V, Vg = 0 V. Due to the presence of built-in electric fields that do not rely on light, the device also generates
effective light response in the infrared band, with a response range from 450 to 2400 nm. Our work offers a new approach for design of
photodetector with ultra-wide spectrum range.

2. Methods

The electrodes pattern was produced on silicon oxide/silicon substrate through UV lithography and development and then the e-
beam evaporation system was used to deposit metal electrodes of Ti/Au (2 nm/30 nm). Then, MoSe2 and BP flakes were mechanically
cleaved onto poly (dimethyl-siloxane) (PDMS) separately. After that, those two kinds of flakes were dry-transferred onto the electrodes

Fig. 1. (A) The optical image of BP/MoSe2 heterojunction (scale bar: 10 μm). (b) Raman spectrum of MoSe2 (red line), BP (green line), and het­
erojunction (blue line). (c) The AFM image of the BP/MoSe2 junction and (d) the thickness of BP layer (blue line) and MoSe2 layer (red line).

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on each side, with overlapping parts between them, as shown in Fig. 1(a).
Raman spectra was measured by a conformal Raman microscope with 532 nm laser excitation to prove the materials. The power
was kept at 40 μW to ensure that the sample would not be burned out, and the spot diameter was focused to 1 μm so that the spot could
hit the MoSe2-only and BP only regions and the BP/MoSe2 junction regions respectively. Atomic force microscope (AFM) was used to
confirm the thickness of materials.
Semiconductor analyzer (B1500A) was employed to measure optoelectronic properties of the device. The supercontinuum light
source (SuperK Extreme, NKT Photonics) provided ultra-wide spectrum light from 450 nm to 2400 nm with tunable power and
monochromator was applied to select the monochromatic light. The microscope (nikon Ni–U) with 50x objective lens was used to focus
the light spot size to 3 μm.

3. Results and discussion

Raman tests were performed on the heterojunction and the test results are shown in Fig. 1(b). The red line is pure MoSe2 Raman
spectrum, and the peaks of A1g,E12g and B12g of MoSe2 appear in 241 cm− 1, 286 cm− 1 and 352 cm− 1 of Raman spectrum respectively
[30]. The results are consistent with the Raman spectra of multilayer MoSe2. The green lines are Raman spectra of pure multilayer BP,
362 cm− 1,439 cm− 1, and 467 cm− 1, corresponding to the A1g,B2g and A2g peaks of BP, respectively. Where A1g represents the interplane
vibration mode of BP, B2g and A2g are both in-plane vibration modes, but they are perpendicular and parallel to the armchair direction
of the P atomic chain respectively [31]. The associated characteristic peaks correspond accurately to the Raman spectra of multilayer
BP. The blue line is the Raman spectrum of the BP/MoSe2 heterojunction. It can be seen that A1g of MoSe2 and A1g,B2g and A2g of BP have
four characteristic peaks, which appear in one Raman spectrum at the same time, indicating that the two are successfully super­
imposed. However, the E12g and B12g peaks of MoSe2, due to their weak strength, were suppressed after covering BP, so they could not be
seen basically. AFM was then used to test the surface morphology of the heterojunction, as shown in Fig. 1(c). A cross-section was
intercepted at different samples to obtain the thickness of BP and MoSe2. The thickness of BP was about 48 nm, while that of MoSe2 was
about 4.4 nm, as shown in Fig. 1(d).
Fig. 2(a) illustrates the schematic of our photodetector, where BP is used as the source electrode and MoSe2 as the drain electrode,
and the silicon substrate takes the oxide layer as the dielectric layer as the gate. Firstly, the electrical characteristics of the device in

Fig. 2. (A) schematic of BP/MoSe2 photodetector. (b) The electrical characteristics of the device under different gate voltage. (c) Output curve
under different light power with 500 nm light, the inset is the partial amplification near the zero point. (d) The relationship between the open circuit
voltage and the short circuit current and the data fitting, under different light power.

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B. Liu et al. Micro and Nanostructures 199 (2025) 208081

dark state was analyzed and he output curve of the heterojunction device was tested, as shown in Fig. 2(b). When the gate voltage is 0
V, the device exhibits certain rectification characteristics, and the positive bias device is in the on-state and the negative bias is in the
off state. This indicates that MoSe2 and BP have formed a pn junction, and a built-in electric field has been generated between them.
When 10–50 V gate voltage is applied to the device, the current increases gradually with the increase of gate voltage, indicating that
the electric field has a certain regulation effect on the device, and the carrier concentration in the channel is affected by the gate
voltage.
Then, the photoelectric properties of the sample under visible light irradiation were tested. The device is illuminated with 500 nm
light, and the optical power on the device is increased from 3.54 nW to 354 nW. It can be seen from the output curve, as the light power
increases, the current also gradually increases. The positive bias voltage can exceed 10 nA, and the negative bias voltage is close to 20
nA, as shown in Fig. 2(c). In addition, there is still a certain photocurrent generated when the bias is zero, as shown in inset of Fig. 2(c).
Because the electron hole pair is separated under the effect of the built-in electric field, with holes moving towards BP and electrons
moving towards, thus forming a short-circuit current (Isc). The short circuit current is negative because it is in the opposite direction of
the forward bias voltage. The short-circuit current increases with the increase of optical power, up to 0.65 nA. Meanwhile, in the open
circuit state, the open circuit voltage (Voc) also increases with the increase of optical power, up to more than 0.2V, as shown in Fig. 2(c).
The open circuit voltage and short circuit current under different power were extracted, and their relationship was fitted through the
following formula [32]:
( )
nkT Isc
Voc = ln +1 (1)
e I0

where n is the ideal factor of the diode, k is the Boltzmann constant, e is the elementary charge, T is the room temperature, and I0 is the
saturation current. It can be seen that the experimental data can be fitted well, as shown in Fig. 2(d). The fitting results show that the
ideal factor n of the device is 2.87. When n = 1, the diffusion current of the diode dominates the device. When n = 2, the device is
dominated by the recombination current. The fitting results show that the recombination current of the device is dominant, that is, the
recombination of transport carriers in the depletion region results in recombination, and additional carriers are needed to form the
recombination current.
To study the photoelectric response performance of the device. The responsivity (R) and specific detectivity (D*) of the device
under different light intensities at bias voltage of 1V is calculated respectively by the following formula [33]:

Fig. 3. Photoresponse characteristics of the BP/MoSe2 photodetector. (a) Photoresponsivity and (b) specific detectivity at different light power. (c)
Time response of photocurrent growth and decay. (d) The response time under periodic pulsed light.

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B. Liu et al. Micro and Nanostructures 199 (2025) 208081

Ipc
R= (2)
P
√̅̅̅̅̅̅̅̅̅̅̅̅̅
A
D =
*
R (3)
2eIdark

Ipc stands for photocurrent, which is calculated by the difference between the total current and the dark current under illumination,
that is, Ipc=Ids-Idark. P is the effective light power illuminated to the device, λ is the wavelength of the incident light, and Idark is the dark
current of the device. It can be seen that the responsivity of the device increases with the decrease of the optical power under positive
bias voltage. When the optical power is 3.54 nW, the responsivity reaches up to 0.167 A/W, as shown in Fig. 3(a). Under similar
conditions, this surpasses some photodetectors prepared with single BP or MoSe2 [4,6,34], and is on the same level as some BP based
pn junction photodetectors [25,26]. At the same time, specific detectivity of the device increase as the optical power decreases, the
maximum value is 1.2 × 1010 Jones, as shown in Fig. 3(b). Generally, the specific detectivity of our device is on the order of 109 higher
than devices prepared from a single material, as pn junctions can suppress dark current and improve the separation efficiency of
electron hole pairs. Then, the response time of the device under 500 nm illumination was studied. When the bias voltage is 1 V, it can
be seen that the current quickly reaches its maximum value after illumination and remains basically stable. Here, we record the rise
time as the time from 10 % to 90 % of the maximum photocurrent, and the fall time as the time from 90 % to 10 % of the maximum
photocurrent. Therefore, the rise time is 30 ms and the fall time is 22 ms, as shown in Fig. 3(c). In addition, the incident light is
irradiated on the device by the pulse light which is modulated into continuous switching by the chopper. The device maintains a

Fig. 4. (A) Output curves of different optical powers, the inset is the local amplification near the zero point. (b) The relationship between the open
circuit voltage and the short-circuit current, and the data fitting, the incident wavelength is 1550 nm. (c) response time at 500 nm. (d) Output curves
under different wavelengths. (e) response time varying wavelengths. (f) Responsivity and specific detective at different wavelengths. The bias
voltage of above results is 1 V.

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B. Liu et al. Micro and Nanostructures 199 (2025) 208081

basically consistent response time in multiple cycles, and the photocurrent rises to the same height, as shown in Fig. 3(d). This shows
that our device has very good repeatability and stability.
Moreover, the photo-response performance of the device under infrared irradiation was studied. The wavelength of the incident
light is set to 1550 nm, which is a common and important wavelength in optical fiber communication. Also, the output curve under
different power was tested first. Due to the high optical power output of the light source in infrared light, the variation range was from
70.8 nW to 5.31 mW. As can be seen from the output curve, as the light power increases, the current also gradually increases, which is
the same as the incident light wavelength of 500 nm, as shown in Fig. 4(a). There is also a certain amount of photocurrent generated at
zero bias voltage, up to about 0.67 nA. At the same time, in the open circuit state, the open circuit voltage also increases with the
increase of optical power, up to 0.19 V, as shown in the inset of Fig. 4(a). The open circuit voltage and short circuit current under
different power are extracted, and the relationship between them is fitted by the relation formula (1). Fig. 4(b) displays the fitted ideal
factor n = 2.73, which is close to the fitting result at 500 nm. In the same way, the response speed of the device under 1550 nm
illumination was tested. When the bias voltage is 1 V, it can be seen that the current quickly reaches the highest value after illumination
and basically keeps stable, rising for 32 ms and falling for 25 ms, which is close to 500 nm, shown in Fig. 4(c). To further suppurting the
findings, the device was tested for output curves at five evenly spaced wavelengths of 450 nm, 900 nm, 1400 nm, 1900 nm, and 2400
nm. It can be seen that the device exhibits similar photovoltaic effects at different wavelengths, illustrated in Fig. 4(d). Moreover,
Under the illumination of these five wavelengths, the device is under multiple on-off switching cycles. It can be seen that the response
time of the device at different wavelengths is relatively close, and the height of the current rise after illumination is consistent, dis­
played in Fig. 4(f). The results of the above figures demonstrate the excellent stability and repeatability of our device.
To further study the performance of the device, the optical response of the device under different wavelengths of light was tested.
Due to the spectral range of the light source is 450–2400 nm, except for 450 nm, a wavelength is taken every 100 nm from 500 nm until
2400 nm. The optical power is uniformly adjusted to 106 nW and the bias is 1 V. The device exhibits optical response across the entire
spectral range tested, displayed in Fig. 4(f). The photocurrent reaches its maximum at 500 nm, with the responsivity and specific
detectivity reaching 65.9 mA/W and 1.2 × 1010 Jones, respectively. Afterwards, as the wavelength increases, the light response begins
to significantly decrease until the wavelength reaches 900 nm, and the responsivity and specific detectivity fluctuate around 15 mA/W
and 3 × 108 Jones. In addition, although the light response at the wavelength of 900–2400 nm has a certain fluctuation, there is no sign
of decay. Considering the 0.3 eV band gap of the multilayer BP which corresponds to a cutoff wavelength of 4 μm, it can be concluded

Fig. 5. Photocurrent spatial imaging with wavelength of (a) 500 nm and (b) 1550 nm. (c) The energy band diagram after illumination hν is greater
than εg1, and (d) hν is less than εg1.

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B. Liu et al. Micro and Nanostructures 199 (2025) 208081

that the spectral range of the photodetector can be extended to the mid-infrared band. Unfortunately, due to the limitation of the
instrument, response data with longer wavelengths cannot be obtained. Add the I–V characteristics of the fabricated device under
different wavelengths.

3.1. Include the I-t curve at varying wavelengths to further support the findings

To further analyze the mechanism of infrared response of our device, the photocurrent spatial distribution of the device is tested.
Two-dimensional scanning is performed on the device surface using focused light spots with wavelengths of 500 nm and 1500 nm,
respectively. Photocurrent spatial imaging is presented in Fig. 5(a) and (b), where the green line represents BP, the white dotted line
represents MoSe2, and the yellow dotted line represents the electrodes. It can be seen that the pn junction region of BP/MoSe2 occurs
the strongest photo-response whether the wavelength is 500 nm or 1550 nm. Here, band diagram is introduced to illustrate these
phenomena. As is known, for semiconductors, only photon energy greater than the band gap can stimulate the photo-generated
carriers. The band gap εg1 of multilayer BP is close to 0.3eV, while the band gap εg2 of multilayer MoSe2 is close to 1.2eV. When
short-wavelength light, e.g. 500 nm, is irradiated on the heterojunction, the photon energy hν is greater than εg1 and εg2, so that both
BP and MoSe2 can simultaneously generate electron-hole pairs, as shown in Fig. 5(c). The pn junction region where BP and MoSe2
overlap generates a built-in electric field, resulting in rapid separation of electron hole pairs and strongest photocurrent. This is
consistent with the results of the photo response at 450–900 nm in Fig. 4(d). As the wavelength gradually increases, the photon energy
also gradually decreases to less than εg2 but remains greater than εg1. The photon can only excite photo-generated electron hole pairs in
BP rather than MoSe2, as shown in Fig. 5(d). As a result, the photo response rapidly decreases when the wavelength becomes longer
than 900 nm in Fig. 4(d). However, the built-in electric field formed between MoSe2 and BP still exist which maintain to separate the
electron hole pairs generated on BP, resulting in a significant photocurrent. Therefore, the strongest photo response always appears
near the pn junction, as long as photo generated carriers could be excited.
These photocurrent spatial imaging results fully prove that heterojunction plays an essential role in enhancing the photo response.
Since the regions with the strongest optical response are in the overlapping regions of the two materials, it can be inferred that
increasing the area of the overlapping region would enhance the optical response of the device.
For the convenience of comparison, the main performances of PN junction photodetectors composed of BP and other n-type ma­
terials have been summarized in Table 1. It can be seen that the responsivity prepared in this work is in the middle position compared
to similar works at present, but it is superior to other works in terms of spectral response range.

4. Conclusions

In summary, two-dimensional BP/MoSe2 heterojunction photodetectors were prepared on the substrate with evaporation elec­
trodes by dry transfer method. This method avoids the degradation of black phosphorus during the UV lithography process. In the
electrical measurement, the device exhibits obvious rectification characteristics, which proves that the pn junction composed of these
two materials forms a built-in field. The photo responsivity and specific detectivity of the device can reach up to 0.167 A/W and 1.2 ×
1010 Jones at wavelength of 500 nm, respectively. The device has a fast response time, rise time and fall time of 30 ms and 22 ms,
respectively. There is a significant photo response in the visible-infrared range of 450–2400 nm. In addition, the photocurrent imaging
results show that the photocurrent is generated in the overlapping pn junction region, which indicates that the built electric field of the
pn junction plays a key role in the separation of electron holes. Our results prove that 2D material heterojunction based on BP/MoSe2
has potential application value in ultra-wide spectrum detection.

CRediT authorship contribution statement

Beiyun Liu: Writing – original draft, Methodology, Investigation, Formal analysis. Chengjie Zhi: Formal analysis, Data curation.
Guanxia Dai: Methodology. Boxing An: Writing – review & editing, Resources, Funding acquisition. Feihong Chu: Software. Jicheng
Mo: Validation. Xiuyan Zhang: Visualization.

Notes

The authors declare no competing financial interest.

Table 1
Main performance of pn junction photodetectors composed of BP and n-type materials.
Materials Responsivity (A/W) Spectrum range (nm) Response time (ms) Reference

BP/MoSe2 0.167 450–2400 28 This work

BP/MoS2 0.418 633 – [25]
BP/MoS2 0.17 532, 1550 – [26]
BP/MoS2 2.71 582 – [27]
BP/InSe 0.011 450–950 24 [35]
BP/GaAs 0.037 514 – [28]

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B. Liu et al. Micro and Nanostructures 199 (2025) 208081

Declaration of competing interest

The authors declare that they have no known competing financial interests or personal relationships that could have appeared to
influence the work reported in this paper.

Acknowledge

The project was supported by the Youth Program of Natural Science Foundation of Guangxi under Grant No.
2021GXNSFBA075015, Young and Middle-aged Teachers Scientific Research Basic Ability Improvement Project of Guangxi Colleges
and University under Grant No. 2022KY0343, the Doctoral Foundation of Guangxi University of Science and Technology under Grant
no. 20Z03, the Natural Science Foundation of Liaoning Province Doctoral research start-up project under Grant No.2024-BS-330; the
Foundation of Liaoning Key Laboratory of Chemical Additive Synthesis and Separation under Grant No. ZJKF-2313, and the Science
and Technology plan guiding Program of Panjin under Grant No. 2023ZDJH016, Hebei Natural Science Foundation under Grant No.
A2023108002.

Data availability

Data will be made available on request.

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