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Inchange - Semiconductor 2SC4007 Datasheet

The document provides specifications for the isc Silicon NPN Power Transistor 2SC4007, highlighting its low collector saturation voltage and breakdown voltages. It is suitable for audio and general-purpose applications, with maximum ratings including a collector current of 4A and a junction temperature of 150℃. Key electrical characteristics are detailed, including breakdown voltages and current gain classifications.

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Bishnu Chaudhary
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96 views2 pages

Inchange - Semiconductor 2SC4007 Datasheet

The document provides specifications for the isc Silicon NPN Power Transistor 2SC4007, highlighting its low collector saturation voltage and breakdown voltages. It is suitable for audio and general-purpose applications, with maximum ratings including a collector current of 4A and a junction temperature of 150℃. Key electrical characteristics are detailed, including breakdown voltages and current gain classifications.

Uploaded by

Bishnu Chaudhary
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SC4007

DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC= 2A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min)
·Wide Area of Safe Operation
·Complement to Type 2SA1634

APPLICATIONS
·Designed for audio and general purpose applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 100 V

VCEO Collector-Emitter Voltage 80 V

VEBO Emitter-Base Voltage 6 V

IC Collector Current-Continuous 4 A

ICM Collector Current-Peak 6 A

Collector Power Dissipation


40
@ TC=25℃
PC W
Collector Power Dissipation
2
@ Ta=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SC4007

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 100 V

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 80 V

V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 6 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.0 V

VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.5 V

ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA

IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 μA

hFE DC Current Gain IC= 1A ; VCE= 4V 100 500

fT Current-Gain—Bandwidth Product IE= -0.2A ; VCE= 12V 10 MHz

COB Output Capacitance IE=0 ; VCB= 10V; ftest= 1MHz 60 pF

 hFE classifications

E F G

100-200 160-320 250-500

isc Website：www.iscsemi.cn 2

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