LAB MANUAL

COURSE NAME: ELECTRONICS I LAB

COURSE CODE: EEE 232

PREPARED BY
FARZANA RAHMAT ZAKI, SENIOR LECTURER, EEE
&
MAHMUDA AKTER MONNE, LECTURER, EEE

DEPARTMENT OF ELECTRICAL & ELECTRONIC ENGINEERING

EASTERN UNIVERSITY

Page 1 of 38
 CONTENTS

Exp. Name of Experiments Page

No. No.
1 Demonstration on diode characteristics 3

2 Demonstration on half-wave diode rectifier circuit 7

3 Demonstration on full-wave diode rectifier circuit 10

4 Demonstration on diode clipping circuit 13

5 Demonstration on diode clamping circuit 15

6 Demonstration on BJT biasing circuit 18

7 Demonstration on CE amplifier 28

8 Demonstration on an emitter follower 32

9 Demonstration on npn CB transistor characteristics 34

10 DC Characteristics of an Enhancement MOSFET. 36

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 Eastern University
Department of Electrical and Electronic Engineering
Course Code: EEE 232
Course Title: Electronics I Lab

Experiment no: 1
Name of the experiment: Demonstration on diode characteristics

Objective:
To Observe the I-V characteristics of silicon p-n junction diodes.

Materials required:
p-n junction diode dc power supply chords and wire
zener diode signal generator
resistor(1k) oscilloscope

Theory:
A diode is a two terminal semiconductor device which allows current to flow through it
in only one direction. This symbol is used to indicate a diode in a circuit diagram.
The meaning of the symbol is (Anode) (Cathode).Current flows from the anode side
to the cathode side. When a diode is forward biased as shown in Fig. 1(a), current ID
flows through the diode and current is given by
VD
ID = IS [ e nVT - 1]
Where n = ideality factor and 1  n  2
ID = diode current
IS = reverse-saturation current
VD= voltage across the diode
VT = thermal voltage = kT/q. At room temperature ( 300k) VT = 25mV.

P-type Silicon: When an intrinsic silicon semiconductor is doped with Al impurities, it

becomes p-type. At thermal equilibrium,
p0 = NA and n0 = ni2 / NA
Where p0 = hole concentration, n0 = electron concentration, NA = doping density of
impurities (acceptor atoms), ni = intrinsic concentration = 1.5  1010 cm-3 for Si at room
temperature.

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N-type Silicon: When an intrinsic silicon semiconductor is doped with P(phosphorous)
impurities, it becomes n-type. At thermal equilibrium,
n0 = ND and P0 = ni2 / ND
Where ND = doping density of impurities (donor atoms).

Current-Voltage Characteristics

Fig1(a). : I-V characteristic of Si diode.

Vin is the cut-in voltage and its value is usually 0.5V. At this voltage, diode is forward
biased but even then I is very small and it is usually neglected.
There are 3 areas of operation -The forward-bias region ( v> 0)
The reverse-bias region (v < 0)
The breakdown region (v < -Vzk)

Zener diode: The zener diode uses a p-n junction in reverse bias to make use of the zener
effect, which is a breakdown phenomenon which holds the voltage close to a constant
value called the zener voltage. It is useful in zener regulators to provide a more constant
voltage, for improvement of regulated power supplies, and for limiter applications. The
Circuit symbol is given below-

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 Fig. 1(b): I-V characteristic of a zener diode.

Circuit diagrams for the experiment:

+ VR - + VR -
1k + 1k +
VD VZ
Vdc - Vdc -

Fig. 2 : Circuit diagram for diode Fig. 3: Circuit diagram for zener diode
characteristics. characteristics.

+ Ch-1 -

+ VR -
1k +
- Ch-2 +

10V(p-p) VD
100Hz -

Fig. 4: Circuit diagram for obtaining diode characteristics from oscilloscope.

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Procedure:

1. Measure resistance accurately using multi-meter. Construct the circuit as shown

in Fig.2. Vary input voltage (Vdc) and measure VD and VR for values of VD =
0.1V, 0.2V, 0.3V, 0.4V, 0.5V, 0.6V and 0.7V and so on. Obtain maximum value
of VD without increasing Vdc beyond 25V. Note that ID = VR / R.

2. Repeat step1 for the values at VZ = 0.5V, 1V, 1.5V, 2V, 2.5V and so on up to the
maximum value obtainable without measuring Vdc beyond 25V. Apply circuit in
Fig.3 for this step.

3. Construct the circuit as shown in the Fig.4. Set the oscilloscope in X-Y mode and
locate the zero point and observe the output.

Data Tables:

For the fig. 2

Obs. Vdc (V) VD (V) VR (V) ID=VR/R (mA)

For the fig. 3

Obs. Vdc (V) VZ (V) VR (V) ID=VR/R (mA)

Report:

1. Complete the data tables for Fig. 2 and Fig. 3.

2. Draw the I-V characteristics for different readings obtained in this experiment for Fig.2
and Fig. 3.

3. Attach the curve that you got from the data table for Fig. 4.

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 Eastern University
Department of Electrical and Electronic Engineering
Course Code: EEE 232
Course Title: Electronics I Lab

Experiment no: 2
Name of the experiment: Demonstration on half-wave rectifier.

Objective:
To understand principle of diode in converting ac into dc and to study half wave rectifier
circuit.

Materials required:
Trainer board
Multimeter
Resistor(10kΩ)
Capacitor (1µF, 47 µF)
Diode- 1N4007

Theory:
A rectifier is an electrical device that converts alternating current to direct current, a
process known as rectification. Rectifiers are used as components of power supplies and
as detectors of radio signals. Rectifiers may be made of solid state diodes, vacuum tube
diodes, mercury arc valves, and other components. There are two types of rectifier
circuits: (a) Half-wave rectifier and (b) Full-wave rectifier.

Half-wave rectifier: A half wave rectifier is a special case of a clipper. In half wave
rectification, either the positive or negative half of the AC wave is passed easily, while
the other half is blocked, depending on the polarity of the rectifier. Because only one half
of the input waveform reaches the output, it is very inefficient if used for power transfer.
Half-wave rectification can be achieved with a single diode in a one phase supply.

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Circuit diagrams for the experiment:

+ Ch-1 -

+ Ch-2 -
10V(p-p) VL 10k
100Hz
-

Fig. 1: Circuit diagram for Half wave Rectifier.

The input and output of the rectifier are drawn in Fig.2. Diode conducts only when it is
forward biased. For VS = Vm sinωt, DC voltage and current of a half wave rectifier are as
follows-
VDC = Vm / π – (1/2) VDO
IDC = {Vm / π - (1/2) VDO} / R; where VDO = 0.7V.

Fig.2. : Input and output waveforms of half-wave rectifier circuit.

PIV( Peak Inverse Voltage): PIV is the peak reverse voltage that appears across the
diode when it is reverse biased.
PIV = Vm

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Ripple factor: A rectifier converts alternating currents into a unidirectional current,
periodically fluctuating components still remaining in the output wave. A measure of the
fluctuating component is given by the ripple factor which is defined as

r = rms value of alternating components of wave = Irms/ Idc = Vrms/ Vdc

average value of wave

where, Irms and Vrms denote the rms value of the ac components of the current and voltage
, respectively.
For a half-wave rectifier, r = 1.21

Filter: The rectifier with a filter is shown in Fig.1. When capacitor charges to Vp (10V
p-p), input voltage decreases immediately but capacitor will not charge its voltage
instantaneously. As a result, diode will be reverse biased and stop conducting. The stored
charges on the capacitor will be released through R.

For RC>>T,
the ripple voltage is given by--- Vr = (1/fC)IL where Vp/R ≈ IL (constant, an
assumption).

DC current, iDav = IL [ 1 + π √ (2 Vp / Vr)]

Maximum diode current, iDmax = IL [ 1 + 2π √ (2 Vp / Vr)]

Procedure:

1. Construct circuit of Fig.1 without the capacitor. Observe Vi and Vo simultaneously on

the oscilloscope. Sketch the input and output waveforms. Measure V0 with multi-
meter .

2. Connect 1μF capacitor across the load resistor. BE CAREFUL about the polarity of
the capacitor. Sketch the input and output waveforms. Measure V0 with multi-meter.

3. Replace 1μF capacitor with 47μF and repeat step 2.

Report:

1. Attach the input and output waveforms for steps 1,2,3.

2. Describe the operation of half wave rectifier.
3. What is the purpose of using capacitor in the rectifier circuit?
4. Which capacitor acts as a better filter? Explain your answer.

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 Eastern University
Department of Electrical and Electronic Engineering
Course Code: EEE 232
Course Title: Electronics I Lab

Experiment no: 3
Name of the experiment: Demonstration on full-wave rectifier.

Objective:
To understand principle of diode in converting ac into dc and to study full wave rectifier
circuit.

Materials required:
Trainer board
Multimeter
Resistor(10kΩ)
Capacitor (1µF, 47 µF)
Diode (1N4007) – 4pieces

Theory:
A rectifier is an electrical device that converts alternating current to direct current, a
process known as rectification. Rectifiers are used as components of power supplies and
as detectors of radio signals. Rectifiers may be made of solid state diodes, vacuum tube
diodes, mercury arc valves, and other components. There are two types of rectifier
circuits: (a) Half-wave rectifier and (b) Full-wave rectifier.

Full-wave rectifier: The full wave rectifier utilizes both halves of the input sinusoid. To
provide a unipolar output, it inverts the negative halves of the sine wave. There are two
forms of full wave rectifier- a) full wave rectifier utilizing a transformer with a center-
tapped secondary winding. b) the bridge rectifier

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Circuit diagrams for the experiment:
The bridge rectifier circuit is shown in Fig.1

+ + V0 -
Vi
-

Fig. 1: Circuit diagram for Full wave Rectifier.

Fig.2. : Input and output waveforms of full-wave rectifier circuit.

PIV( Peak Inverse Voltage): PIV is the peak reverse voltage that appears across the
diode when it is reverse biased.
PIV = Vm - VDO
DC voltage, VDC = 2Vm/π – 2VDO

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Ripple factor: A rectifier converts alternating currents into a unidirectional current,
periodically fluctuating components still remaining in the output wave. A measure of the
fluctuating component is given by the ripple factor which is defined as
r = rms value of alternating components of wave = Irms/ Idc = Vrms/ Vdc
average value of wave

where, Irms and Vrms denote the rms value of the ac components of the current and voltage
, respectively.
For a full-wave rectifier, r = 0.482

Filter: The rectifier with a filter is shown in Fig.1. When capacitor charges to Vp (10V
p-p), input voltage decreases immediately but capacitor will not charge its voltage
instantaneously. As a result, diode will be reverse biased and stop conducting. The stored
charges on the capacitor will be released through R.

For RC>>T,
the ripple voltage is given by--- Vr = Vp/ (2fCR)
DC current, iDav = IL [ 1 + π √ (Vp / 2Vr)]
Maximum diode current, iDmax = IL [ 1 + 2π √ (Vp / 2Vr)]

Procedure:

1. Construct circuit of Fig.1 without the capacitor. Observe and sketch Vi and Vo . DO
NOT TRY to oserve Vi, V0 simultaneously. Measure ac and dc components of V0
With multi-meter.

2. Connect 1μF capacitor across the load resistor. BE CAREFUL about the polarity of
the capacitor. Sketch the input and output waveforms. Measure V0 with multi-meter.

3. Replace 1μF capacitor with 47μF and repeat step 2.

Report:

1. Sketch the input and output waveforms for steps 1, 2, 3.

2. Describe the operation of bridge rectifier.
3. What are the advantages and disadvantages of the full wave center tapped and bridge
rectifier circuit?

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 Eastern University
Department of Electrical and Electronic Engineering
Course Code: EEE 232
Course Title: Electronics I Lab

Experiment no. : 4
Name of the experiment: Demonstration on diode clipping circuit.

Objective:
To understand the application of diodes in clipping circuit.

Materials required:
Breadboard
Multimeter
Resistor(1kΩ)
DC power supply
Signal generator
Oscilloscope
Diode (1N4007) – 1pc
Zener diode(4.7V) -2pcs

Theory: Limiter or clippers are used to cut-off or eliminate a portion of an ac signal. A

limiter can be realized by using diode and resistor as shown in figure.
This circuit limits an input voltage to certain maximum or minimum values. In the circuit
in Figure 2-1, one can see that as long as Vi is less than 2.5V, then the diode will be
reverse biased (an open circuit). In this case, the output voltage will track the input
voltage. If Vi exceeds 2.5V then the diode turns on and then Vo will be 5V. Thus, this
circuit limits the output voltage to less than 2.5V. By rearranging the components
variations on this circuit can be achieved.

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Circuit diagrams for the experiment:

The clipper circuit is shown in Fig.1 and 2.

Figure 1

Figure 2

Procedure:
1. Construct the circuit shown in figure1. Observe Vi and Vo simultaneously on the
oscilloscope and sketch the waveforms. Set the oscilloscope in XY mode. Observe
and record the transfer characteristic of the circuit. Make sure that Vi is fed to the X
channel.
2. Reverse the polarity of the diode in Fig.1 and repeat step 1.
3. Construct the circuit shown in Fig.2 and repeat the procedure in step 1.

Report:
1. What is a clipping circuit? Explain the operation of the circuit in Fig.1 and Fig.2.
2. Draw the input-output waveforms of Fig-1 and 2.
3. Design a circuit in which the input voltage is Vi = 5sinωt and the output should be
limited between +2.5V and -3.5V. Assumes that the diodes are ideal.
4. How will V0 change if the polarities of the two zener diodes in the circuit of figure-2
are reversed?

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 Eastern University
Department of Electrical and Electronic Engineering
Course Code: EEE 232
Course Title: Electronics I Lab

Experiment no: 5
Name of the experiment: Demonstration on diode clamping circuit.

Objective:
To observe and understand the application of diodes in clamping circuits.

Materials required:
Breadboard
Multimeter
Resistor(1kΩ)
Capacitor (10μF)
DC power supply
Signal generator
Oscilloscope
Diode (1N4007) – 1pc

Theory:
The clamper circuit is one that will clamp a signal to a different dc level. The clamper
circuit( also known as dc restorer) changes the dc voltage level of an input, but does not
affect the shape of the waveform.

Consider the negative voltage clamping circuit shown in Fig.-1. When the input is
positive, diode D1 is forward biased and capacitor C1 changes with the polarity shown.
During the positive half-cycle of input, the output voltage equals the diode forward
voltage VF . At this time, the voltage on the right hand side of the capacitor is +V F, while
that on the left-hand side is +E. Thus C1 is charged to (E-VF) with the polarity shown.
When the input goes negative, the diode is reverse biased and has no further effect
on the capacitor voltage. Also, R1 has a very high resistance, so that it cannot discharge
C1 by very much during negative (or positive) portion of the input waveform. While the
input is negative, the output voltage is the sum of the input and capacitor voltages. Since
the polarity of the capacitor charge is the same as the negative input, the output is a
negative voltage that is larger than the peak input level.
The peak-to-peak output is the difference between the negative and positive peak voltage
levels:

p-p output = VF – [ -(2E-VF)] = 2E

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 (E - VF)

+ C1 -

R1 VF

VF

2E
2E

Fig.1: Clamping circuit

Circuit diagrams for the experiment:

The clamping circuit is shown in Fig.2.

10F

+
Vi
1k

V0
10v(p-p)
square wave -
500Hz

Fig-2: Clamping Circuit

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Procedure:

1. Construct the circuit shown in figure2. Observe Vi and Vo simultaneously on the

oscilloscope and sketch the waveforms. Set the oscilloscope in XY mode. Observe
and record the transfer characteristic of the circuit. Make sure that Vi is fed to the X
channel.

2. Reverse the polarity of the diode in Fig.2 and repeat step 1.

Report:

1. What is a clamping circuit? Explain the operation of the circuit in Fig.2.

2. Draw the input-output waveforms.

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 Eastern University
Department of Electrical and Electronic Engineering
Course Code: EEE 232
Course Title: Electronics I Lab

Experiment no: 6
Name of the experiment: Demonstration on BJT Biasing Circuits.

Objective:
To establish the proper operating point and to study the stability of the operating point
with respect to changing β in different biasing circuits.

Materials required:
Breadboard
Multimeter
Resistors(1kΩ, 10kΩ, 470Ω, 560Ω, 500K Ω pot)
n-p-n transistor (C828)
Dc power supply
DC micrometer (0-100µA)

VCC=15V
1K

1K

Rc=470 Rc=470

Ic Ic
500K

500K
+VCE -

+VCE -

IB IB
10K
+VBE -

+VBE -

Figure 1(a) Fixed Bias Circuits Figure 1(b)

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1K VCC=15V VCC=15V

1K
Rc=470 Rc=470

Ic Ic
500K

500K
+VCE -

+VCE -
IB IB

10K
+VBE -

+VBE -
RE=560 RE=560

Figure 2(a) Self Bias Circuits Figure 2(b)

Theory:

Bipolar transistor amplifiers must be properly biased to operate correctly. In circuits

made with individual devices (discrete circuits), biasing networks consisting
of resistors are commonly employed. Much more elaborate biasing arrangements are used
in integrated circuits, for example, bandgap voltage references and current mirrors.
The operating point of a device, also known as bias point, quiescent point, or Q-point, is
the point on the output characteristics that shows the DC collector–emitter voltage (Vce)
and the collector current (Ic) with no input signal applied. The term is normally used in
connection with devices such as transistors.
For analog operation of a Class A amplifier, the Q-point is placed so the transistor stays
in active mode (does not shift to operation in the saturation region or cut-off region)
when input is applied.
The following discussion treats five common biasing circuits used with Class A bipolar
transistor amplifiers:

1. Fixed bias
2. Collector-to-base bias
3. Fixed bias with emitter resistor
4. Voltage divider bias
5. Emitter bias

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Fixed bias (base bias)

Fig. 3: Fixed bias (Base bias)

This form of biasing is also called base bias. The single power source (for example, a
battery) is used for both collector and base of a transistor, although separate batteries can
also be used.
In the given circuit,

Vcc = IBRB + Vbe

Therefore, IB = (Vcc - Vbe)/RB
For a given transistor, Vbe does not vary significantly during use. As Vcc is of fixed value,
on selection of RB, the base current IB is fixed. Therefore this type is called fixed
bias type of circuit.
Also for given circuit,

Vcc = ICRC + Vce

Therefore, Vce = Vcc - ICRC

The common-emitter current gain of a transistor is an important parameter in circuit

design, and is specified on the data sheet for a particular transistor. It is denoted as β on
this page.
Because IC = βIB
we can obtain IC as well. In this manner, operating point given as (Vce,IC) can be set for
given transistor.

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Merits:

 It is simple to shift the operating point anywhere in the active region by merely
changing the base resistor (RB).
 A very small number of components are required.
Demerits:

 The collector current does not remain constant with variation in temperature or
power supply voltage. Therefore the operating point is unstable.
 Changes in Vbe will change IB and thus cause IE to change. This in turn will alter
the gain of the stage.
 When the transistor is replaced with another one, considerable change in the value
of β can be expected. Due to this change the operating point will shift.
Usage:
Due to the above inherent drawbacks, fixed bias is rarely used in linear circuits (i.e.,
those circuits which use the transistor as a current source). Instead, it is often used in
circuits where transistor is used as a switch. However, one application of fixed bias is to
achieve crude automatic gain control in the transistor by feeding the base resistor from a
DC signal derived from the AC output of a later stage.

Collector Feedback Bias

Collector-to-base bias
This configuration employs negative feedback to prevent thermal runaway and stabilize
the operating point. In this form of biasing, the base resistor is connected to the

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collector instead of connecting it to the DC source . So any thermal runaway will
induce a voltage drop across the resistor that will throttle the transistor's base current.
From Kirchhoff's voltage law, the voltage across the base resistor is

Using , and so

From Ohm's law, the base current , and so

Hence, the base current is

If is held constant and temperature increases, then the collector current increases.
However, a larger causes the voltage drop across resistor to increase, which in turn
reduces the voltage across the base resistor . A lower base-resistor voltage drop
reduces the base current , which results in less collector current . Because an
increase in collector current with temperature is opposed, the operating point is kept
stable.
Merits:

 Circuit stabilizes the operating point against variations in temperature and β (i.e.
replacement of transistor)
Demerits:

 In this circuit, to keep independent of , the following condition must be met:

which is the case when

 As -value is fixed (and generally unknown) for a given transistor, this relation
can be satisfied either by keeping fairly large or making very low.

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  If is large, a high is necessary, which increases cost as well as precautions
necessary while handling.
 If is low, the reverse bias of the collector–base region is small, which limits
the range of collector voltage swing that leaves the transistor in active mode.
 The resistor causes an AC feedback, reducing the voltage gain of the
amplifier. This undesirable effect is a trade-off for greater Q-point stability.
Usage: The feedback also decreases the input impedance of the amplifier as seen from
the base, which can be advantageous. Due to the gain reduction from feedback, this
biasing form is used only when the trade-off for stability is warranted.

Fixed bias with emitter resistor

Fixed bias with emitter resistor

The fixed bias circuit is modified by attaching an external resistor to the emitter. This
resistor introduces negative feedback that stabilizes the Q-point. From Kirchhoff's
voltage law, the voltage across the base resistor is
VRb = VCC - IeRe - Vbe.
From Ohm's law, the base current is
Ib = VRb / Rb.
The way feedback controls the bias point is as follows. If Vbe is held constant and
temperature increases, emitter current increases. However, a larger Ie increases the

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emitter voltage Ve = IeRe, which in turn reduces the voltage VRb across the base resistor.
A lower base-resistor voltage drop reduces the base current, which results in less
collector current because Ic = β IB. Collector current and emitter current are related by
Ic = α Ie with α ≈ 1, so the increase in emitter current with temperature is opposed, and the
operating point is kept stable.

Similarly, if the transistor is replaced by another, there may be a change in

IC (corresponding to change in β-value, for example). By similar process as above, the
change is negated and operating point kept stable.
For the given circuit,
IB = (VCC - Vbe)/(RB + (β+1)RE).

Merits:
The circuit has the tendency to stabilize operating point against changes in temperature
and β-value.
Demerits:

 In this circuit, to keep IC independent of β the following condition must be met:

which is approximately the case if

( β + 1 )RE >> RB.

 As β-value is fixed for a given transistor, this relation can be satisfied either by
keeping RE very large, or making RB very low.
 If RE is of large value, high VCC is necessary. This increases cost as well as
precautions necessary while handling.
 If RB is low, a separate low voltage supply should be used in the base circuit.
Using two supplies of different voltages is impractical.
 In addition to the above, RE causes ac feedback which reduces the voltage gain of
the amplifier.

Page 24 of 38
Usage: The feedback also increases the input impedance of the amplifier when seen from
the base, which can be advantageous. Due to the above disadvantages, this type of
biasing circuit is used only with careful consideration of the trade-offs involved.

Voltage divider biasing

Voltage divider bias

The voltage divider is formed using external resistors R1 and R2. The voltage across
R2 forward biases the emitter junction. By proper selection of resistors R1 and R2, the
operating point of the transistor can be made independent of β. In this circuit, the voltage
divider holds the base voltage fixed independent of base current provided the divider
current is large compared to the base current. However, even with a fixed base voltage,
collector current varies with temperature (for example) so an emitter resistor is added to
stabilize the Q-point, similar to the above circuits with emitter resistor.
In this circuit the base voltage is given by:

voltage across

provided .
Also
For the given circuit,

Page 25 of 38
Merits:

 Unlike above circuits, only one dc supply is necessary.

 Operating point is almost independent of β variation.
 Operating point stabilized against shift in temperature.
Demerits:

 In this circuit, to keep IC independent of β the following condition must be met:

which is approximately the case if

where R1 || R2 denotes the equivalent resistance of R1 and R2 connected in parallel.

 As β-value is fixed for a given transistor, this relation can be satisfied either by
keeping RE fairly large, or making R1||R2very low.
 If RE is of large value, high VCC is necessary. This increases cost as well as
precautions necessary while handling.
 If R1 || R2 is low, either R1 is low, or R2 is low, or both are low. A low R1 raises
VB closer to VC, reducing the available swing in collector voltage, and limiting
how large RC can be made without driving the transistor out of active mode. A
low R2 lowers Vbe, reducing the allowed collector current. Lowering both resistor
values draws more current from the power supply and lowers the input resistance
of the amplifier as seen from the base.
 AC as well as DC feedback is caused by RE, which reduces the AC voltage gain
of the amplifier. A method to avoid AC feedback while retaining DC feedback is
discussed below.
Usage:
The circuit's stability and merits as above make it widely used for linear circuits.

Page 26 of 38
Prelab Work
Student must perform the following calculations before coming to the lab

1. For the circuit shown in Fig. I(a) and 2(a) find expressions for IcQ and VCQ.

Procedures:
1. Measure RC and record.
2. Construct Fig. 1(a). Adjust 500K potentiometer until VCE ≈ VCC/2. Measure VCE, VBE,
VRC and IB. Calculate IC from VRC and RC.
3. Construct Fig. 1(b). Repeat step-2.
4. Construct self bias circuit Fig. 2(a). Repeat step-2.
5. Construct voltage divider biasing circuit as shown in Fig. 2(b). Repeat step-2.

Reports:
1. Compare the circuits of fig. 1(a) and 1(b) with respect to stability against variation in β
and justify your answer.
2. Compare the circuits of fig. 2(a) and 2(b) with respect to stability against variation in β
and justify your answer.
3. Compare the stability of fixed bias circuits with that of self bias circuits.

4. Discuss the stability of fixed bias and self bias circuits against variation in temperature.

5. Determine β from the measured values of currents. Using this value for β and
measured value of PB, calculate VCEQ and ICQ for prelab expressions. Compare had
calculated values with experimental ones.

Page 27 of 38
 Eastern University
Department of Electrical and Electronic Engineering
Course Code: EEE 232
Course Title: Electronics I Lab

Experiment no: 7
Name of the experiment: Demonstration on Common Emitter (CE)
Amplifier.

Objective
To know the effect of the frequency on the gain of a common emitter amplifier and also
to measure the input impedance, output impedance and phase relationships of a CE
amplifier.

Equipment Required
1. n-p-n transistor 2. 10k potentiometer(2 3. Resistors
C828/C829 (1 pcs) pcs) (l00Ω,470Ω,
560Ω,5KΩ,33KΩ)
4. Capacitors 5. Multimeter (1 pcs) 6. Bread board(1 pcs)
(10µF,47µF)
7. Power supply'(1 8. Signal generator(1 9. Oscilloscope(1 pcs)
pcs) pcs)

Theory
When a bipolar transistor operates in linear region, then principle of superposition can be
applied. As a result, ac circuit can be separated from dc circuit. For small ac signal
analysis, π or T model is used.

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For T-model ,

For π-model,
And and

For T-model,

VA is the early voltage and Vt = kT/q is thermal voltage.

We know that a p-n junction diode is associated with two types of capacitance, (i)
junction capacitance and (ii) diffusion capacitance. A bipolar transistor consists of two
junctions, emitter- base and collector-base junctions. At high frequency we cannot
neglect the effect of capacitances on the performance of the transistor. At low and mid
band frequencies, their effects can be neglected.

Circuit Diagram:

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Prelab (Home) Work
Students must perform the following Calculations before coming to the lab.
1. Draw the small signal equivalent Circuits of the CE Amplifier Circuit.
2. Obtain an expression for the voltage gain (V0/Vin).
3. Remove CE = 10µF and obtain voltage gain.
4. Obtain an expression for output resistance Ro

Procedures

1. Construct the circuit as shown in the circuit diagram for CE amplifier. Adjust 10K
potentiometer until VCE is approximately equal to Vcc/2 by multimeter.

2. Set the signal generator frequency at 5KHz. Ch.2 is connected to Yo. Apply and
increase input signal until you see distorted output signal. Set Vin below this value
100mV. Connect Vin to ch.1. Measure peak value of both Vin and Yo.

3. Set the oscilloscope in dual mode. Observe the phase relationship between input
and output.

4. Connect the 10 KΩ potentiometer from Vo to ground. Adjust the 10KΩ

Potentiometer until Vo is half the open circuit value. Measure the output
impedance from potentiometer.

5. Disconnect ch.2 and connect ch.1 across loon and measure peak value.
Disconnect the bypass capacitor and observe the effect on gain.

6. Reconstruct the circuit as shown in Fig. I. Set the signal frequency at50Hz.
Measure the input and output.

7. Repeat step 7 for frequency 100Hz, 200Hz, 500Hz, 800Hz, IKHz,2KHz etc until
higher cut-off frequency is found ensuring constant input for all steps.

8. Observe the phase relationships between input and output below lower cutoff and
higher cutoff frequency.

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Reports
1. Plot the gain in dB as a function of frequency in a semi-log paper.
2. From the graph paper determine the lower cutoff frequency, higher cutoff
frequency and mid-band gain for this common emitter amplifier.
3. What are the input impedance, output Impedance and phase relationship between
input and output for CE amplifier and comment on them?
4. What is the function of bypass capacitor and the blocking capacitor?
5. What is the advantage and disadvantage of common emitter amplifier?
6. Using measured value of RB, Calculate voltage gain from prelab expressions for β
=75. If value of gm and rπ required, determine gm and rπ from dc analysis for the
circuit.

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 Eastern University
Department of Electrical and Electronic Engineering
Course Code: EEE 232
Course Title: Electronics I Lab

Experiment no: 8
Name of the experiment: Demonstration on an Emitter Follower.

Objective
To measure the input impedance, output impedance, phase relationship and gain of an
emitter follower.

Equipment Required
10. n-p-n transistor 11. 10k, 100K 12. Resistors
C828/C829 (1 pcs) potentiometer(2 (l00Ω,10KΩ,100KΩ)
pcs)
13. Capacitors 14. Multimeter (1 pcs) 15. Bread board(1 pcs)
(10µF,47µF)
16. Power supply'(1 17. Signal generator(1 18. Oscilloscope(1 pcs)
pcs) pcs)

Circuit Diagram

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Procedures
1. Construct the circuit as shown in Fig. I. Adjust l00K potentiometer to fix the Q-
point at the middle of the output characteristics.
2. Set the signal generator frequency at5Kllz. Apply the input signal to O.5V (p-p).
Observe the wave shape in dual mode.
3. Measure the peak value of both Vin and Vo.
4. Connect the 10KΩ potentiometer from Vo to ground. Adjust the 100 KΩ
potentiometer until Vo is half the open circuit value. Measure the potentiometer
resistance.
5. Disconnect ch.2 &potentiometer and connect ch.1 across 1000. Measure the peak
value.
6. Change the input frequency to 50 Hz and measure voltage gain. Measure voltage
gains at different frequencies. Take sufficient readings around lower cutoff
frequency, in mid-band and upper cutoff frequency.

Reports

1. Plot the frequency response of the circuit on semi-log graph paper.

2. What is the input impedance, output impedance, phase relationship and gain of
the emitter follower circuit. How do these quantities compare with those of a CE
amplifier?
3. What is the application of the emitter follower circuit?
4. What are advantages and disadvantages of emitter follower circuit?
5. Explain the reason why voltage gain is less than unity.

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 Eastern University
Department of Electrical and Electronic Engineering
Course Code: EEE 232
Course Title: Electronics I Lab

Experiment no: 9
Name of the experiment: Demonstration on npn CB transistor
characteristics.

Objective:
To determine the CB characteristics of a transistor.

Materials required:
Breadboard
Multimeter
Resistors(1kΩ, 2k, 500Ω, 100Ω)
n-p-n transistor (C828)
Dc power supply

Theory:
Transistor has two p-n junctions. One is called emitter junction and other is called
collector junction. When transistor is used as an amplifier, it is operated in active mode.
In active mode, emitter junction is forward biased and collector junction is reverse
biased.

Emitter current is given by- IE = IC + IB = [(1+β )/ β )]IC

Where, β = IC / IB is called common emitter current gain.

In good transistor, IC >>IB i.e. β>>1. IC can also be expressed as IC = α IE

where α = β /( β+1). Α is called common base current gain. For good transistor, α is close
to unity.

Proper dc biasing of a transistor is a pre-requisite for proper operation as an amplifier.

The purpose of the biasing is to fix the IC and VCE. But IC is a function of temperature,
VBE and β. It is always desirable to design a biasing circuit where IC is insensitive to
change in β.

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Circuit diagrams for the experiment:

500 100
A
A
Vcc (0-20V)

IE

VEE(0-5V)
IC

Fig.:1. Common Base configuration

Procedure:

1. Construct the circuit shown in figure1

2. Set VCC to 10V. Vary VEE so that IE is around 2mA. Adjust VCC to get VCB as zero.
Measure the value of VCB.
3. Keeping VCB = 0 , vary IE by changing VEE and measure the value of VBE and IE.
4. Set IE = 3mA. Adjust VCC to get VCB = 1V. Repeat step 3.
5. Adjust VEE so that IE is zero. Vary VCC from zero to a suitable value and measure VCB
and IC.
6. Vary VEE so that IE = 1mA. Repeat step 5.
7. Repeat step 5 for IE = 2mA.

Report:

1. Plot output and input characteristics of the n-p-n CB transistors.

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 Eastern University
Department of Electrical and Electronic Engineering
Course Code: EEE 232
Course Title: Electronics I Lab

Experiment no: 10
Name of the experiment: DC Characteristics of an Enhancement
MOSFET.

Objective:
1. To measure some of the important characteristics of the MOSFET
2. Construct a set of characteristic curves for the MOSFET

Equipments:
1. N-channel enhancement MOSFET 1 piece
2. DC ammeter I unit
3. DC voltmeter 1 unit
5. Regulated power supply 1 unit
6. Resistor 100k, 100k Pot, 5600 1 piece each
7. Bread Board One

Theory: The n-channel MOSFET Metal-Oxide consists of a Field Effect Transistor p-

type substrate into which two n+ regions are diffused, as shown in Fig. 1. These n+
sections act as the source and the drain.

The metal area of the gate, in conjunction with the insulating dielectric oxide layer and
the semiconductor channel, forms a parallel-plate capacitor. The insulating layer of
silicon dioxide is the reason why this device is called the Metal Oxide-field effect

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Transistor. The in layer results in an extremely high input resistance ( 1010 to 1015Ω) for
the MOSFET. When VGS≥VT, the transistor is ON. Now dependent on the value of drain
voltage VDS, MOSFET either operates in triode or saturation region.

The Enhancement MOSFET:

If we ground the substrate for the structure of Fig. 1 and apply a positive voltage at the
gate, an electric field will be directed perpendicularly through the oxide. This field will
end on "induced" negative charges on the semiconductor site, as shown in Fig. 1. First the
negative charge of electrons which are minority carriers in the p-type substrate forms an
"inversion layer". As the positive voltage on the gate increases, the induced negative
charge voltage, electrons will pile up in a thin region beneath the Si0 2- Si inter face and
electron density will be exceed than droping density NA. When the electron density at the
inter face, ns, is equal to NA, the corresponding gate voltage is known as threshold
voltage VT. A depletion region consisting of immobile acceptor ions will be formed. At
relatively large gate voltage Va an inversion layer will be created near the Si or Si inter
face.

Circuit Diagram:

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Procedures:
1. Connect the circuit as shown in Fig. 2. Set VGG to 15V. Regulate the potentiometer so
that the gate to source voltage VGS is OV.
2. For different values of VDD measure the drain to source voltage VDS and the drain
current ID. Also measure the voltage across 560Ω resistor. Take the readings upto for
VDS=5V.
3. Set the gate voltage VGS=3V. Repeat step 2 for this setup.
4. Similarly for VGS=5V. Repeat step 2 for each case and take the readings.

Reports:

1.(a) Plot the drain characteristics curves i.e. 10, VS, VDS for VGS=0,3 and 5V.
(b) Determine VA for the plot.
2. Determine threshold voltage using experimental data. Assume, λ=0.

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