MAC16D, MAC16M, MAC16N

Preferred Device

Triacs

Silicon Bidirectional Thyristors

Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
• Blocking Voltage to 800 Volts http://onsemi.com
• On-State Current Rating of 16 Amperes RMS at 80°C
• Uniform Gate Trigger Currents in Three Quadrants TRIACS
• High Immunity to dv/dt — 500 V/µs minimum at 125°C 16 AMPERES RMS
• Minimizes Snubber Networks for Protection
400 thru 800 VOLTS
• Industry Standard TO-220AB Package
• High Commutating di/dt — 9.0 A/ms minimum at 125°C
• Device Marking: Logo, Device Type, e.g., MAC16D, Date Code
MT2 MT1
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1) VDRM, Volts
(TJ = –40 to 125°C, Sine Wave, VRRM
50 to 60 Hz, Gate Open) 4
MAC16D 400
MAC16M 600
MAC16N 800
On-State RMS Current IT(RMS) 16 Amps
(Full Cycle Sine Wave, 60 Hz,
TC = 80°C) 1
2
Peak Non-Repetitive Surge Current ITSM 150 Amps 3
(One Full Cycle Sine Wave, 60 Hz,
TJ = 125°C) TO–220AB
CASE 221A
Circuit Fusing Consideration I2t 93 A2sec STYLE 4
(t = 8.3 ms)
Peak Gate Power PGM 20 Watts PIN ASSIGNMENT
(Pulse Width ≤ 1.0 µs, TC = 80°C)
1 Main Terminal 1
Average Gate Power PG(AV) 0.5 Watt 2 Main Terminal 2
(t = 8.3 ms, TC = 80°C)
3 Gate
Operating Junction Temperature Range TJ – 40 to °C
+125 4 Main Terminal 2

Storage Temperature Range Tstg – 40 to °C

+150 ORDERING INFORMATION
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
Device Package Shipping
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded. MAC16D TO220AB 50 Units/Rail

MAC16M TO220AB 50 Units/Rail

MAC16N TO220AB 50 Units/Rail

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 2000 1 Publication Order Number:

May, 2000 – Rev. 2 MAC16D/D
 MAC16D, MAC16M, MAC16N

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance — Junction to Case RθJC 2.0 °C/W
— Junction to Ambient RθJA 62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM, mA
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 0.01
TJ = 125°C — — 2.0

ON CHARACTERISTICS
Peak On-State Voltage* VTM — 1.2 1.6 Volts
(ITM = ± 21 A Peak)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) IGT mA
MT2(+), G(+) 10 16 50
MT2(+), G(–) 10 18 50
MT2(–), G(–) 10 22 50
Holding Current IH — 20 50 mA
(VD = 12 V, Gate Open, Initiating Current = ±150 mA)
Latching Current (VD = 24 V, IG = 50 mA) IL mA
MT2(+), G(+) — 33 50
MT2(+), G(–) — 36 80
MT2(–), G(–) — 33 50
Gate Trigger Voltage (VD = 12 V, RL = 100 Ω) VGT Volts
MT2(+), G(+) 0.5 0.75 1.5
MT2(+), G(–) 0.5 0.72 1.5
MT2(–), G(–) 0.5 0.82 1.5
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10. (di/dt)c 9.0 — — A/ms
(VD = 400 V, ITM = 6.0 A, Commutating dv/dt = 24 V/µs,
Gate Open, TJ = 125°C, f = 250 Hz, No Snubber)
CL = 10 µF
LL = 40 mH
Critical Rate of Rise of Off-State Voltage dv/dt 500 — — V/µs
(VD = Rated VDRM, Exponential Waveform,
Gate Open, TJ = 125°C)
*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

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 MAC16D, MAC16M, MAC16N

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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 MAC16D, MAC16M, MAC16N

125 20 DC
180°
120 18

PAV, AVERAGE POWER (WATTS)

120°
TC, CASE TEMPERATURE (°C)

115 16
α = 30 and 60° 14
90°
110 60°
α = 90° 12
105
α = 180° α = 120° 10
100 α = 30°
8
95
DC 6
90 4
85 2
80 0
0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16
IT(RMS), RMS ON-STATE CURRENT (AMP) IT(RMS), ON-STATE CURRENT (AMP)

Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

100 1

TYPICAL AT MAXIMUM @ TJ = 125°C

TJ = 25°C

0.1
I T, INSTANTANEOUS ON-STATE CURRENT (AMP)

10
0.01
0.1 1 10 100 1000 1 · 104
t, TIME (ms)

Figure 4. Thermal Response

MAXIMUM @ TJ = 25°C 40
1
I H, HOLD CURRENT (mA)

MT2 POSITIVE

MT2 NEGATIVE

0.1 5
0 0.5 1 1.5 2 2.5 3 3.5 4 – 40 – 10 20 50 80 110 125
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. On-State Characteristics Figure 5. Hold Current Variation

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 MAC16D, MAC16M, MAC16N

100 1
VD = 12 V

VGT, GATE TRIGGER VOLTAGE (VOLT)

IGT, GATE TRIGGER CURRENT (mA)

RL = 100 Ω
Q2
Q3

Q1 Q1
Q3

Q2

VD = 12 V
RL = 100 Ω

1 0.5
– 40 – 10 20 50 80 110 125 – 40 – 10 +20 50 80 110 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Gate Trigger Current Variation Figure 7. Gate Trigger Voltage Variation
dv/dt , CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE (V/µ s)

5000 100
VD = 800 Vpk
4K
TJ = 125°C (dv/dt) c , CRITICAL RATE OF RISE OF
COMMUTATING VOLTAGE (V/µ s)

3K TJ = 125°C 100°C 75°C

10
2K
ITM
1
f=
tw 2 tw
1K
6f I
(di/dt)c = TM
VDRM 1000

0 1
10 100 1000 10000 10 20 30 40 50 60 70 80 90 100
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) (di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

Figure 8. Critical Rate of Rise of Off-State Voltage Figure 9. Critical Rate of Rise of
(Exponential Waveform) Commutating Voltage

LL 1N4007
200 VRMS
ADJUST FOR MEASURE
ITM, 60 Hz VAC I
TRIGGER CONTROL

CHARGE
TRIGGER CONTROL –
CHARGE 200 V
+
MT2
1N914 51 W
NON-POLAR MT1
CL G

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c

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 MAC16D, MAC16M, MAC16N

PACKAGE DIMENSIONS

TO–220AB
CASE 221A–09
ISSUE Z

NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
–T– PLANE
Y14.5M, 1982.
C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
Q A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04

STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2

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 MAC16D, MAC16M, MAC16N

Notes

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 MAC16D, MAC16M, MAC16N

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