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Theo van de Ven and Armand Soldera (Eds.)
Advanced Materials
Also of interest
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Advanced
Materials
Edited by
Theo van de Ven and Armand Soldera
Editors
Prof. Theodorus van de Ven
Dept. of Chemistry
McGill University
Pulp & Paper Research Centre
3420 Rue University
Montreal, Québec H3A 2A7
Canada
[email protected]
ISBN 978-3-11-053765-9
e-ISBN (PDF) 978-3-11-053773-4
e-ISBN (EPUB) 978-3-11-053779-6
www.degruyter.com
Preface
In 2006, RAND published a report on the Global Technology Revolution 2020
(https://www.rand.org/pubs/technical_reports/TR303.html). Among the 56 tech-
nologies identified as having profound impacts by 2020, 16 are at the top of the list
for their better chance of becoming established and for their social relevance.
Among them, nine are directly related to advanced materials. A year before the ref-
erence year of this report, we show that research carried out in our Center is per-
fectly aligned with the expected trends. This Centre, Quebec Centre for Advanced
Materials/Centre Québécois sur les Matériaux Fonctionnels (QCAM/CQMF), funded
in 2017, arises from a merge between two recognized centers: Center for Self-Assem-
bled Chemical Structure (CSACS), whose director was Prof. Theo van de Ven, and
CQMF, whose director was Prof. Armand Soldera. Conceptually, it is divided into
three fundamental themes devoted to advanced materials: self-assembly, polymer
science, and nanoscience; and three applied themes dedicated to functional materi-
als: energy, sustainable development, and biomedical applications. This book high-
lights the importance of research in materials in Quebec.
An advanced material can be defined as a material for which some properties
have been greatly improved, comparatively to more conventional materials. This
book contains the main trends regarding this topic from basic research to industrial
applications. The topics of this book fall mainly under TRL (Technology Readiness
Level) 1 to 5. It is also aimed at exposing research in advanced materials developed
by members of CQMF/QCAM. Moreover, it represents a follow-up of our previous
book entitled Functional Materials published by de Gruyter, which mainly repre-
sents a pedagogical treatment of these materials.
The guiding principle underlying the large development of advanced materials
is certainly the way their design is performed. This rational design is at the heart of
all the chapters of this book. All the aspects related to the design of advanced mate-
rials going from fundamental to applied research, or touching biomaterials to elec-
tronic structures, are thus inspected.
A very original design strategy has been envisioned by Rahbani and Sleiman
(Chapter 7): the origami approach. It provides an ideal tool to specifically position
functional objects and study their interactions at the nanoscale level. This way to
fashion DNA leads to the development of nanomechanical devices for applications
ranging from biomedicine to material sciences. The approach in designing biomate-
rials advocated by Hoesli et al. (Chapter 10) follows a different strategy. They pro-
pose to develop tailored functional materials in differentiating pancreatic cells for
cellular therapy of diabetes. For this, an interdisciplinary approach is required to
(1) design platforms to mimic pancreas development and (2) study developmental
biology in vitro. From a different perspective, Odette and Mauzeroll (Chapter 4) pro-
pose to use redox-sensitive lipid-based materials for applications in biological
https://doi.org/10.1515/9783110537734-202
VI Preface
systems. They find there a very new source for the development of clinically thera-
peutic systems.
Thanks to a fine-tuning of their constituting molecules, new and optimal prop-
erties emerge. Rondeau-Gagné (Chapter 3) proposes the development of self-healing
materials. This ability to regenerate spontaneously and autonomously has a strong
potential to revolutionize many areas such as advanced technologies or consumer
goods. The propensity of small molecules to form glass instead of the expected crys-
tals also leads to a great variety of applications, including pharmaceutical, pho-
tonic, and optoelectronic. Molecular glasses are also noteworthy materials that can
play an important role in such applications. However, their very understanding re-
mains a challenge. An overview of the progress made in the last 25 years, from their
design, synthesis, their characterization, and the simulation of their properties, is
described by Lebel and Soldera (Chapter 9).
To design new materials that will ultimately lead to interesting applications, self-
assembly remains a very stimulating avenue. van de Ven and Whitehead (Chapter 8)
propose alternate copolymers, where specific self-assembly driving monomers are in-
troduced to generate hollow nanotubes. Morphology transformation was triggered
differently by Yu and Zhao (Chapter 2). It is CO2 that plays this role, thanks to an ap-
propriate introduction of functional groups into polymers. Different CO2-responsive
functional groups are thus proposed. Control of solid-state assembly is exploited by
Schneider and Perepichka (Chapter 1) to regulate charge mobility in organic semicon-
ductors. Structure–property relationships are thus elaborated to better tackle charge
mobility. Achieving semiconducting properties from organic materials is actually
very challenging. To address this issue, Morin et al. (Chapter 13) review some of the
most important aspects regarding the synthesis, purification, and applications of two
highly praised carbon nanomaterials, namely carbon nanotubes and graphene nano-
ribbons. Nanoparticles are advanced materials where self-assembly can leverage
technological applications. Bayram and Blum (Chapter 12) present an overview of the
internal and external methods for directing this self-assembly of nanoparticles. Sta-
bility of such nanosystems, actually for nanoparticles as large as 100 nm, was shown
to greatly depend on the interface. The phase diagram of Au–Pt solid core–liquid
shells was thus revisited by Braidy (Chapter 11).
Designing is also uncovered in the way materials are prepared. The centrifugal
spinning is a novel efficient technique to prepare nanofiber. It consists in extruding
fibers through high speed, rotating polymer solution jets. The setup and the mathe-
matical model are discussed by Taghavi and Noroozi (Chapter 5).
Advanced materials have also a strong impact in designing fuel cells. Two stud-
ies reported in this book are concerned by improvement in this kind of application.
Sun et al. (Chapter 6) explore the chemistry of Fe/N/C electrocatalysts to replace
the rare and expensive platinum for the oxygen reduction reaction in polymer elec-
trolyte fuel cells. Outstanding nonprecious metal catalyst emerges from their lab.
Schougaard et al. (Chapter 14) survey researches on Li-ion batteries, revealing the
Preface VII
List of Contributors XI
Nadi Braidy
11 Phase Diagram of an Au–Pt Solid Core–Liquid Shell Nanoparticle 285
Index 389
List of Contributors
Cyril Aumaitre Anthony Jolly
Département de chimie and Centre de Département de chimie and Centre de
Recherche sur les Matériaux Avancés Recherche sur les Matériaux Avancés
(CERMA) (CERMA)
Université Laval Université Laval
1045 Ave de la Médecine 1045 Ave de la Médecine
Québec Québec
Canada G1V 0A6 Canada G1V 0A6
https://doi.org/10.1515/9783110537734-204
XII List of Contributors
1.1 Introduction
Organic electronics encompass devices in which molecules or polymers serve as
the electrically active material. Notably, the properties of these organic materials
can be endlessly tuned through structural modifications. The ability to tailor a
semiconductor for a specific application is one of the most attractive aspects of
organic electronics. Additionally, solution-processable materials offer the possi-
bility of inexpensive, large area devices, via, for example, roll-to-roll or inkjet
printing. Solar cells produced in this way could potentially satisfy the world’s in-
creasing energy demands in a sustainable manner. Organic electronics made en-
tirely from biodegradable materials would help stem the accumulation of e-waste
in landfills. For organic electronics to become widely adopted and compete with
the existing inorganic materials, however, they need to demonstrate sufficiently
long lifetimes and competitive optoelectronic properties. Since the 1970s, this has
fueled a continuing quest for new high-performance, stable materials, as well as
extensive research into what factors dictate charge transport and how to control
them. The goal of this chapter is to contribute new design strategies for the syn-
thesis of organic semiconductors (OSCs) and to better our understanding of
structure–property relationships.
While some design strategies yield predictable results, many structure–
property relationships are still not well understood, especially as they relate to
https://doi.org/10.1515/9783110537734-001
2 Julia A. Schneider, Dmitrii F. Perepichka
Initially the impetus for organic electronics was to recreate the conducting
properties of inorganic materials, which led to extensive studies on the conductivity
of molecular crystals and conjugated polymers. The current prominence of the
field, however, came about due to breakthroughs in device fabrication. While work-
ing for Eastman Kodak in the early 1980s, Tang filed patents for the first heteroge-
neous organic solar cell and the first electroluminescent device, making him one of
the founders of organic electronics. His organic light-emitting diode (OLED) demon-
strated not only that organic material could produce light in response to an electri-
cal current, but also that organic materials could be used in commercially viable
electronic devices [8]. A few years later, the Friend group, working at the Cavendish
Laboratory, reported the first OLED based on a conjugated polymer, poly(phenylene
vinylene), paving the way for solution-processable devices [9].
In the late 1980s, Friend and others were also making breakthroughs in organic
field-effect transistors (OFET). An important contribution was the demonstration
that charge carriers could be introduced into conjugated polymers, such as polyace-
tylene, by using an electric field [10]. Also paramount in the advancement of the
field was Garnier’s work with oligothiophene-based OFETs [11]. Early measurements
of evaporated films of sexithiophene only displayed mobilities on the order of
10 − 4 cm2 =Vs, but the possibility of using OSCs in conventional electronics was
established.
Since these early discoveries, many OSCs – polymers and small mole-
cules – have been synthesized and tested in devices. Organic electronics ex-
hibit four key beneficial properties: flexibility, transparency, expendability,
and the potential to be processed at low-cost over large surfaces through solu-
tion printing techniques [12]. Because of these properties, organic electronics
can be advantageous for certain applications where inorganic materials would
not be appropriate, though they do often suffer from low conductivities and
poor operational stability. The incorporation of thin-film-printed OSCs in radio
frequency identification tags, for example, would lower the tag’s cost and im-
prove their mechanical properties, making them viable for tracking large in-
ventories, such as in supermarkets [13]. OSCs have also been heavily studied
as sensors, where cost, flexibility, and disposability can be important factors,
but fast switching speeds may not be necessary, for example, because the
sensing process is limited by biochemical reactions and adsorption rates [14].
The first commercial use of OSCs was in OLED displays, which are thinner and
use less energy than their inorganic analogues. The emission color of an OLED
can also be tuned by modifying the organic chromophore. Organic photovol-
taics (OPVs) are an example of devices that greatly benefit from the large-
scale printing processes available to OSCs. Solution-processable OPVs can be
light, flexible, and transparent, something that would be impossible in silicon-
based solar cells [15]. Complimentary circuits, which rely on a combination of
p- and n-type transistors, have also been made from OSCs, although their
4 Julia A. Schneider, Dmitrii F. Perepichka
development has been slow due in part to the relative scarcity of n-type semi-
conductors [16]. All these applications have made organic electronics one
of the most rapidly growing fields over the last several decades. Ongoing re-
search focuses on selectively tuning a material’s electronic properties, on in-
creasing solubility and stability, and on understanding and controlling
supramolecular assemblies.
S
S
n
Anthracene Polythiophene
Figure 1.1: Conjugated molecules have alternating double and single bonds. Overlap between
π-orbitals causes electrons to be delocalized throughout the structure, giving rise to electron
density above and below the aromatic cores, as seen in the calculated electrostatic potential
surfaces.
In a material with no band gap, termed “metallic,” electrons can easily move into
the empty states of the conductance band, creating “free” charge carriers that
1 Design Principles for Organic Semiconductors 5
Eg Eg = 0
HOMO
Valence
band
(filled states)
Insulator Semiconductor Metal
Figure 1.2: Molecular orbitals make up the energy bands and the size of the band gap determines
the conductivity. p- and n-type doping of the band gap with respective charge accumulation is
shown in the semiconductor. (Electrons are filled and holes are unfilled circles).
describe charge transport in all OSCs. Charge transport in an ultrapure crystal is dif-
ferent than that in an amorphous film, which will also be different from transport
in semicrystalline polymer films. Several theories were developed and expanded
upon to explain the observed characteristics of OSC devices, namely, temperature-
dependent, field-dependent, and film-thickness-dependent charge-carrier mobility.
Unfortunately, it is still hard to predict the effects of microstructures in inhomoge-
neous OSC films, such as crystalline domains in polymer films [17, 18]. The existing
theories are generally characterized as band theory, hopping theory, and hybrid
theories of the two.
Band theory is based on a model where charges are fully delocalized over sev-
eral molecular units and exist in bands (equivalent to the conductance and valence
bands introduced in Section 1.3). For band transport to occur, the interaction energy
between nearest neighbors, called the electronic coupling (t), must be greater than
disorder-induced energy barriers. Band transport is characterized by a decrease in
charge carrier mobility with increasing temperatures, a property common to crystal-
line inorganic semiconductors, but rarely seen in OSCs. Karl and coworkers mea-
sured the hole and electron transport in assiduously purified naphthalene crystals
at temperatures from 4 to 300 K, and proved that band transport can take place in
ultrapure OSC crystals below 300 K [19]. When measuring electron transport along
the three crystallographic directions of naphthalene crystals, a strong anisotropy
was observed that coincided with the electronic couplings acquired from DFT
calculations – a fact that emphasizes the dependence of band transport on crystal-
linity [20].
In amorphous OSCs, however, disorder effects become large and transport
through a single delocalized band is no longer feasible. Disorder effects can be dy-
namic, such as vibrational changes when a molecule (or “site”) becomes charged
(seen in crystalline OSCs as well) or static, such as pre-existing variations in site
energies and intersite distances [21]. In such an environment, a charge is localized
on a single site and must “hop” to another localized site for conductivity to be ob-
served. This process had been previously described by Marcus in the electron trans-
fer between identical molecules in solutions – a theory for which he was awarded
the 1992 Nobel Prize in chemistry [22, 23]. Hopping theory in OSCs was spearheaded
by, among others, Mott and Holstein, who developed small polaron-hopping theory
[24]. A polaron is the combination of a charge carrier and the lattice deformations
associated with that carrier’s movement. The distortions to the molecules and their
environment lead to an energetic cost to charge transfer called the reorganization
energy (λ). As a result, charge transfer is thermally activated and we observe an in-
crease in mobility as temperature increases. Holstein’s model for the rate of electron
transfer is a function of the electronic coupling (t), the polaron binding energy
(Epol ), and thermal energy (kB T) shown in eq. (1.1).
1 Design Principles for Organic Semiconductors 7
rffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi
t2 π Epol
kET = exp − (1:1)
h 2Epol kB T 2kB T
Figure 1.3: Theoretical charge transport models. On the left is the hopping method where only
localized states exist. In the middle is band theory where all charges travel through the conductance
band. On the right is the MTR model in which trapped charges can still move into the conductance
band. (Note that these figures depict n-type transport).
8 Julia A. Schneider, Dmitrii F. Perepichka
In the context of molecular design for OSCs, maximizing nearest neighbor inter-
actions and minimizing reorganization energy are crucial to increased charge mobi-
lities. In the end, though, charge transport is often limited by the number of trap
states. The efficacy of a trap depends on its energy level relative to the HOMO or
LUMO, for hole or electron trapping, respectively [29]. Trapping sites can either be
structural faults or chemical impurities. A commonly seen trap is oxygen or oxida-
tion products, but not all such impurities need to act as traps. If the energy level of
the potential trap lies above or below the material’s band gap, the trap remains in-
effective. The nature of the traps present, especially oxidation products, depend on
the OSC and can sometimes be predicted and avoided.
OPVs, though still tailing silicon-based solar panels in terms of efficiency, can be
printed into lightweight, flexible, and transparent solar cells. These qualities are
important mechanistic and aesthetic features when incorporating solar windows
into urban architecture [36]. The solution processability of materials for roll-to-roll
printing is especially important for OPVs due to the large-scale nature of this
application.
OPVs produce electricity through the photoelectric effect illustrated in Figure 1.5
for a simple p–n junction. A p–n junction describes the interface between a p-type
(donor) and n- type (acceptor) semiconductor. Incident light excites an electron into
the conductance band of the donor or acceptor material, leaving a hole behind, thus
creating an “electron–hole pair” or “exciton.” This exciton must diffuse to the p–n
junction where the charges can be separated: the hole into the p-type donor material
and the electron into the n-type acceptor material. The charges are then channeled to
their respective electrodes and produce an electric current.
LUMO
hv
HOMO
Hole
Electron
Figure 1.5: Once an exciton is generated (left) it must diffuse to the p–n junction before undergoing
charge separation (right).
10 Julia A. Schneider, Dmitrii F. Perepichka
Efficient solar cells are constructed with a few key factors in mind.
– First, the active layer should have a broad absorbance spectrum that captures a
majority of the sun’s energy. This calls for a semiconductor with a small band
gap ( 1.5 eV). The band gap cannot be too small, however, to avoid large en-
ergy loss from exciton thermalization and the HOMO–LUMO offset of the cell
[37].
– The lifetime of an exciton is on the order of nanoseconds and its diffusion
length only 10 nm, necessitating small, regularly spaced domains of donor
and acceptor phases to minimize exciton recombination.
– The driving force for charge separation at the p–n junction (the electropotential
drop from the LUMO of the donor to the LUMO of the acceptor) needs to be
greater than the exciton binding energy to drive exciton dissociation.
– The charge mobilities of the donor and acceptor materials should be reasonably
high ( > 10 − 4 cm2 /Vs). They should also be balanced to avoid a build-up of elec-
trons or holes, which leads to accelerated charge recombination.
Controlling the morphology of the donor and acceptor domains is an integral part
of fabricating efficient devices. The most common practice is to dissolve the two
materials in a common solvent and to create a blended active layer called a bulk
heterojunction (BHJ) (Figure 1.6). Annealing and adding solvent additives can alter
how each material crystallizes and thus affect the resulting domain sizes.
The power efficiency of a solar cell is defined by three parameters: the short-
circuit current (ISC ), the open-circuit voltage (VOC ), and the fill factor (FF). These pa-
rameters are calculated from the current–voltage relationship of the device plotted
in an I–V curve (Figure 1.7). The short-circuit current is the largest current that may
be drawn from the solar cell and occurs when the bias across the cell is zero. While
in the open-circuit state, charge carriers generated under illumination accumulate
at the anode and cathode. When this growing potential difference cancels out the
built-in potential, the current is zero and the measured open-circuit voltage is the
maximum voltage the solar cell can provide to an external circuit [38]. In OPVs
the VOC is limited by the “band gap” of the cell, or LUMOAcceptor − HOMODonor (Fig-
ure 1.6), but empirically, large voltage losses are always observed due to the recom-
bination of charges [39].
Power is the product of the current and voltage (P = I × V), with the maximum
power of the cell (PMax ) representing the point of peak efficiency. The fill factor (FF)
is the ratio of the area bound by the ISC and VOC to the area bound by the current
and voltage at PMax as seen in eq. (1.2) and Figure 1.7. FF is often described as the
“squareness” of the I–V curve, with an ideal value of 1.
IMax VMax
FF = (1:2)
ISC VOC
1 Design Principles for Organic Semiconductors 11
Anode
Cathode
Donor
Acceptor
Anode VOC
Donor phase
Acceptor phase
Cathode
Figure 1.6: On the left is a simplified depiction of a bulk heterojunction showing the blended
donor and acceptor domains. On the right is shown the VOC as it relates to the HOMO of the donor
and the LUMO of the acceptor, that is, the band gap of the cell.
Voltage (V)
Open circuit
voltage
(Voc)
Fill factor
(FF)
Current (A)
PMax
Short circuit
current (Isc)
Figure 1.7: A characteristic I–V curve for an irradiated solar cell showing the VOC , ISC , and PMax . The
FF is the ratio between the two shaded areas.
How do these parameters relate to the design of OSCs? Lowering the band gap
of the donor material means more light is harvested, which has a direct bene-
ficial impact on the ISC . Unfortunately, if shrinking the band gap increases the
HOMO level of the donor material, this will limit the VOC ; therefore, simultaneously
lowering the band gap and the HOMO level of the material is extremely desirable.
Chen et al. observed that for each 0.1 eV drop in the HOMO level of differently
substituted poly(benzodithiophene-thieno[3, 4-b]thiophene), they increased the
VOC by 0.07 V [40].
Both the ISC and VOC are limited by charge recombination as well. Exciton disso-
ciation and charge recombination both occur at the donor–acceptor interface. It is
therefore important to augment charge mobility with ordered films while maintain-
ing adequate domain sizes for exciton dissociation. Efficient charge extraction at
the electrodes will also help reduce recombination loss.
Polymers have been extensively tested as donor materials for BHJ solar
cells, and a key property that influences the morphology of the films is molec-
ular weight [41]. Larger molecular weight polymers show a propensity to form
nanofibrillar morphologies and exhibit higher charge mobilities. For example,
batches of poly(dioctylfluorene-dithienylbenzothiadiazole) displayed higher ISC s
with increasing MWs, though the VOC s stayed constant [42]. Too large an MW, how-
ever, may decrease the mobility due to entanglement, which hinders intrachain
transport [43].
To ensure the solution processability of high MW-conjugated polymers, solubi-
lizing side chains are required, which will affect film morphology as well. The posi-
tion, length, and bulkiness of alkyl side chains affects the π–π interactions between
polymer chains. Increased π–π interactions lead to higher mobilities and ISC s, but
may have a detrimental effect on the film blends [44]. More examples of side chain
engineering is discussed in Section 1.6.4
Above the gate is an insulating layer, called the gate dielectric layer, for example,
SiO2. When an electric field is applied to the gate charges accumulate in the dielec-
tric layer. This causes an accumulation of complementary charges in the semicon-
ductor at the semiconductor-dielectric interface. Once turned “on” by the electric
field, the semiconductor becomes conductive and charges can migrate along the
narrow transistor channel. Since charge migration occurs only at the semiconduc-
tor–dielectric interface, any defects can easily limit charge mobilities. “Smoothing”
the dielectric layer, with polystyrene, for example, has been shown to greatly im-
prove mobilities [48].
Organic semiconductor
Vd
Transistor channel
Source Drain
+ Insulator
+ + + + + + + + + + + + +
Gate
Figure 1.8: Schematic diagram of a bottom-gate, top-contact OFET showing the gate-induced charge
transport channel. Reprinted by permission from Macmillan Publishers Ltd: Nature Materials [49],
copyright 2010.
In the case of poorly soluble small molecules, films are deposited using vacuum
vapor deposition, but for polymers or soluble small molecules, solution-processing
techniques, such as spin-coating, are used. A single crystal can also be used as the
active layer, enabling the measurement of mobilities specific to that packing archi-
tecture. The physical morphology of the OSC plays an important part in device per-
formance, and so the method used to deposit the material can vastly affect charge
mobility. This is starkly evident in the case of pentacene thin films, which are prac-
tically insulating (μh 10 − 9 cm2 =Vs) as amorphous films deposited at low temper-
atures, but display high mobilities in ordered films deposited at room temperature
(μh 1 cm2 =Vs) [50].
The charge mobility of an OFET is determined by recording the drain-source
current (IDS ) as a function of drain-source bias (VDS ) at different gate voltages (VG ).
When a small drain-source voltage VDS is applied (smaller than the gate voltage
minus the threshold voltage, <(VG −VT )) the device operates in the linear regime. As
drain-source voltage increases and surpasses (VG −VT ) the device operates in a
14 Julia A. Schneider, Dmitrii F. Perepichka
–80 V
Linear Saturation
regime regime
–60 V
IDS1/2 (A1/2)
IDS (mA)
IDS (A)
–40 V VT
–20 V
0V
0 –10 –20 –30 –40 –50 –60 10 0 –10 –20–30–40–50–60
Figure 1.9: Typical electrical characteristics of a p-channel OFET device: (left) output curve and
(right) transfer curve.
saturation regime (Figure 1.9). Charge mobilities can be calculated from either re-
gime. In the saturation regime, drain current is independent of drain-source volt-
age, but rather varies as the square of the gate voltage as given in eq. (1.4):
W
IDS = − Ci μðVG − VT Þ2 (1:4)
2L
where W and L are the channel width and length and Ci is the capacitance of the
dielectric. The threshold voltage, VT , is the minimum gate voltage that is needed to
generate the transistor channel. The field-effect carrier mobility, μ, can thus be de-
termined from the slope of the curve plotting the square root of the saturation cur-
rent as a function of gate voltage according to eq. (1.5):
pffiffiffiffiffiffi2
2L 1 δ IDS
μ= (1:5)
W Ci δVG
It must be pointed out, however, that these equations are approximations. Equation
(1.5) assumes that the mobility is independent of the gate voltage, which is not the
case for several reasons. For example, at low gate voltages charges will be trapped by
localized traps, limiting mobility [51, 52]. The charge mobility in eq. (1.5) is also not
corrected for contact resistance at the metal/organic interface, which is a common is-
sues in OFETs. Contact resistance can occur due to an energy level mismatch between
the electrode metal and the OSC or disorder in the OSC film at the interface.
1 Design Principles for Organic Semiconductors 15
The most basic and prevalent unit in conjugated molecules is the benzene ring. The
benzene ring contains six electrons in delocalized π-orbitals, but its ring structure
gives it more resonance stabilization than linear hexatriene. Benzene is a very small
conjugated system, so its HOMO–LUMO gap is large (ca. 5.5 eV).
To shrink the band gap, there are two ways of expanding the conjugation. The
first is to connect multiple benzene or aromatic rings together with C–C single
bonds, forming an oligomer or a polymer. This method preserves the aromatic sta-
bility of each ring, but planarity is lost due to steric hindrance between the benzene
rings. The short distance between benzene rings will not accommodate the C–H
16 Julia A. Schneider, Dmitrii F. Perepichka
Substitution
Aromaticity
θ°
S
S S
Figure 1.10: Factors that influence band gap labeled on polythiophene (PT). Reprinted with
permission from Roncali [53]. Copyright 2007 John Wiley & Sons, Inc.
bonds on each ring, requiring the backbone of the polymer to twist (Figure 1.11a).
When larger substituents need to be added, steric hindrances can cause serious tor-
sional twists, interrupting the orbital overlaps between rings. A simple solution to
planarize the polymer is to introduce a spacer group between each ring. The spacer
group must also be conjugated and, in effect, it will “dilute” the aromaticity of the
benzene rings. This promotes delocalization of electrons along the entire polymer,
not just within nodes of the aromatic rings. Examples of such conjugated spacers are
vinylene (Figure 1.11b) and ethynylene. The ethynylene spacer has no hydrogen
atoms to contribute to sterics and therefore produces rod-like, planar polymers [54].
The disadvantage comes in the form of increased BLA, caused by the large difference
in lengths between the C–C single bond and the much shorter C ≡ C triple bond.
(a) (b)
n n
Poly(p-phenylene) Poly(phenylene vinylene)
Eg = 3.4 eV) Eg = 2.4 eV
θ = 36.8° θ = 0.5°
Figure 1.11: Simple polyphenylene has a twisted backbone (a) leading to a large band gap, which
can be lowered by introducing a vinylene spacer, such as in poly(phenylene vinylene) (b). DFT
calculations of the dihedral angles performed using B3LYP, 6-31G(d).
1 Design Principles for Organic Semiconductors 17
S n S n
Poly(isothianaphthene)
O OR O OR
OR S F OR F
S
S S
S S n S S n
OR OR
Figure 1.13: Both isothianaphthene and thieno[3,4-b]thiophene contain a fused aromatic ring when
the polymer is in quinoidal form.
A method to planarize aromatic rings and reduce BLA is to use a spacer group
that impedes torsional twisting. The most well-known example of this is fluorene,
which is essentially two benzene rings fused by a C–C single bond and an sp2 car-
bon. Fusing the rings not only ensures better π-orbital interactions, but also short-
ens the C–C linking bond and elongates the C–C bonds within the five-membered
rings, thus reducing the BLA (Figure 1.14). Polyfluorenes, therefore, are extremely
popular OSCs, exhibiting good stability, interesting liquid–crystalline properties, as
well as being excellent blue-light emitters [64]. In many other π-conjugated sys-
tems, such as PTs, the rigidification of molecules has proved to be a useful ap-
proach toward low-band gap materials [65, 66].
04
1.5 1.386
1.3
1.39
85
1.507
7
1.3
5
76
1.38
1.472
7
1.3
2
1.3
1.416
87
1.390
Figure 1.14: The fused spacer group in fluorene lowers BLA as compared to biphenyl. Averaged
bond lengths (Å) reported in [67] for biphenyl and reported in [68] for fluorene.
1 Design Principles for Organic Semiconductors 19
Benezene Eg = 6.8 eV
HOMO = –6.7 eV
Naphthalene Eg = 4.8 eV
HOMO = –5.8 eV
Anthracene Eg = 3.6 eV
HOMO = –5.2 eV
Pentacene Eg = 2.1 eV
HOMO = –4.6 eV
Migrating sextet
Pentacene
biradicaloid
Phenanthrene Triphenylene
Figure 1.15: A drop in band gap and a raising of HOMO levels can be observed with the expansion
of linear acenes. Below are nonlinear PAHs illustrating Clar’s classification of six-membered rings.
20 Julia A. Schneider, Dmitrii F. Perepichka
1.6.3 Heteroatoms
250
Reorganization energy
200
150
Energy (meV)
100
50
0
0.00 0.02 0.04 0.06 0.08 0.10 0.12
Figure 1.16: Molecular reorganization energies computed for (oligo)acenes (black triangles),
phenacenes (green squares), circum(oligo)acenes (blue circles), and (oligo)perylenes (red diamonds),
as a function of the inverse of the total number of carbon atoms NC . Reprinted from Malloci et al.
[74], Copyright 2014 with permission from Elsevier.
..
N
.. .. ..
S
.. N S
.. N
H ..
Figure 1.17: Pictured are several heteroaromatic structures. Electrons participating in the
aromaticity are labeled in red.
1.6.4 Substituents
R
N
O C10H21 R N N
S
S S S S n
n
R F F
2 3
S S O O
N N
S S S S
n S
S n
S 4 5
R1 R2 R1
N N N
H N N H N N H N N
0° 10° 0°
n n n
S S S
H H OR2 OR2 F F
PTBTz PTBTz-OR PTBTz-F
μh = 0.007 cm2/(Vs) μh = 0.019 cm2/(Vs) μh = 1.9 cm2/(Vs)
Figure 1.19: Varying the benzotriazole substituents in these copolymers did not affect the band
gap, but led to tighter interchain ordering and higher mobilities. Reprinted with permission from
Yum et al. [83]. Copyright 2014 American Chemical Society.
F–S interactions all have some stabilizing influence, their noncovalent binding ener-
gies might be too low to provide a conformational “lock” in polymers. That study
concludes that only hydrogen-bonding interactions, such as CH–N and CH–O, have
high enough binding energies ( 2 kcal/mol) to act as “locking” mechanisms [84].
Electron-donating or -withdrawing substituents are often used to fine-tune the
HOMO and LUMO energy levels of a material. Replacing the hexyl chain in P3HT
with an alkoxy chain (see polymer 2) results in a 0.3 eV increase in the HOMO level,
shrinking the band gap of the polymer (1.6 eV compared to 1.9 eV for P3HT) [85].
24 Julia A. Schneider, Dmitrii F. Perepichka
Finally, possibly the most widely explored design strategy for manipulating the band
gap of a material is the donor–acceptor strategy, which calls for combining electron-
deficient units with electron-rich units. When these units are in conjugation, their
orbital splitting results in a narrower band gap with lower HOMO–LUMO levels (Fig-
ure 1.20a). This strategy is widely used in polymers for OPVs where broad absorption
is desired, but raising the HOMO would be detrimental to the VOC . Using D–A units,
the band gap of a material can be fine-tuned, either by altering a unit or by altering
its ratio relative to other units. The “push–pull system” in D–A polymers has other
benefits as well. As was introduced in Section 1.6.1, BLA can be decreased and po-
larizability increased by increasing the strength of the donor and acceptor moieties.
This has been extensively studied in polyenes [92], as well as other conjugated sys-
tems [93, 94]. As a result of their high polarizability, materials with D–A structures
can exhibit nonlinear optical properties, such as two-photon absorption [95, 96].
Electron-rich and -deficient aromatics are well known to assemble in a face-to-
face manner [98, 99]. The “push–pull” behavior of D–A units promotes intra-
molecular charge transfer between units, leading to intramolecular dipoles.
Thus, the dipole–dipole interactions between polymer chains lead to smaller in-
terchain distances and therefore better charge transport between polymer back-
bones (Figure 1.20b). Indeed, short π–π distances are frequently observed in X-ray
diffraction experiments of D–A polymer films [100, 101]. D–A polymer PTB7, shown
in Figure 1.13, has been used in OPVs with PCEs exceeding 9%. Yet when Yu’s
group attempted to make a similar polymer with a D–A–A structure, their highest
1 Design Principles for Organic Semiconductors 25
a) LUMO
LUMO
Eg
HOMO
HOMO
D A
b) D–A
Donor
Acceptor
Figure 1.20: (a) The orbital splitting of donor and acceptor units results in a smaller band gap
without raising HOMO levels. Reproduced from Ref. [97] with permission of The Royal Society of Chem-
istry. (b) Tight interchain packing in D–A polymers is favored by alternating donor–acceptor π-stacks.
PCE was only 2%. By using two acceptor units, they lowered the local dipole mo-
ment causing charge localization in the A–A unit, and as a result observed faster
recombination rates and lower ISC s [102].
Examples of oft-used donor and acceptor units are shown in Figure 1.21. While
common in polymer design, the D–A strategy is equally applicable to oligomeric
molecules and unimolecular rectifiers, and can be utilized simply through the
choice of substituents as well. Examples of D–A copolymers using different build-
ing blocks are shown in Figure 1.22. All have shown excellent properties in OPVs or
OFETs. Bronstein et al. combined thieno[3,2-b]thiophene (TT) and diketopyrrolopyr-
role, two particularly well-studied units known for forming crystalline films with
good mobilities, in polymer 6. Although as-spun films of 6 showed no signs of crys-
tallinity in X-ray diffraction or differential scanning calorimetry studies, their
charge mobilities were among the highest for polymer FETs (μh = 1.95 cm2 =Vs). Poly-
mer/PC71 BM OPV devices gave a max PCE of 5.4% [103]. Higher charge mobilities
and PCE values have since been realized in many other diketopyrrolopyrrole co-
polymers [104]. With polymer 7, Chen et al. present a heptacyclic unit where the
benzodithiophene core is covalently rigidified by two flanking thiophene units. This
monomer was copolymerized with thienopyrrolodione. FET devices of 7 exhibited
modest mobilities (μh = 6.8 × 10 − 2 cm2 =Vs), but OPV devices with PC71 BM gave PCEs
of 6.6%, a vast improvement compared to the unrigidified analogue with a PCE of
0.2% [105]. Osaka et al. also utilized a fused ring approach with their D–A polymer
8, which features naphthodithiophene and naphthobisthiadiazole. The first itera-
tion of 8 had no solubilizing chains on the naphthodithiophene units (R′ = 2-decyl-
tetradecyl, R″ = H) and displayed an edge-on orientation with a π-stack distance of
26 Julia A. Schneider, Dmitrii F. Perepichka
Donors Acceptors
Weak
N S S N
N S N N S
R R R Benzobisthiazole Bithiazole
Fluorene Carbazole R R
R R R N O N O
N N
S S
S S S
R R R Benzotriazole Thienopyrrolodione
Benzodithiophene Indacenodithiophene R
O N
R R S
N N
S
Strong N O
S S S
R
Thienothiophene Cyclopentadithiophene Diketopyrrolopyrrole Benzothiadiazole
Figure 1.21: A selection of electron-donating and -accepting monomers that have been used
in D–A copolymers.
C8H17
C10H21 C8H17O OC8H17
O N O
C8H17
S N O S S
S
S S S
N S S S
O
C8H17
C8H17O OC8H17
C10H21
6 7
S
Rʹ N N
Rʺ
S
S
S
S
N N Rʹ
Rʺ S
Figure 1.22: Shown are three examples of D–A copolymers with impressive properties in OFET or
OPV devices.
1 Design Principles for Organic Semiconductors 27
3.43 Å. This polymer yielded high performing FET and polymer/PCBM OPV devices
(μh = 0.5 cm2 =Vs, PCE = 5.2%). Adding linear dodecyl chains to naphthodithiophene
changed the orientation of the polymer films to have face-on π-stacks with a dis-
tance of 3.51 Å. The improved solubility led to even higher PCEs of 8.0% while only
lowering mobilities to μh = 0.1 cm2 =Vs [106]. Recent years have seen continued prog-
ress in the device performance of D–A polymers and small molecules. New materi-
als and processing techniques have led to OPV efficiencies of 10–12% [107–109] and
charge mobilities nearing 5 cm2 =Vs [110–112].
Both of these effects promote electron delocalization and shrink the band gap of
the polymer.
Our study led us to report the synthesis and the spectroscopic, structural, and
device characterization of poly(3,6-dialkylsulfanylthieno[3,2-b]thiophene vinylene),
S-PTTV, its oxidized derivative poly(3,6-dialkylsulfonylthieno[3,2-b]thiophene
vinylene), SO2 -PTTV, and the random copolymer incorporating both sulfanyl and
sulfonyl units, S/SO2 -PTTV (Figure 1.23) [127].
R
R O R S S
S S S S R
O O
S S
O S S O
S S S S R n
R n R O n O
S S
R O m
Figure 1.23: Polymer structures discussed in this case study, where R=2-ethylhexyl.
8
Relative energy (kcal/mol)
6 S-2TTV
SO2-2TTV
2
0 20 40 60 80 100 S-2TT
Figure 1.24: Energy barrier of rotation of thiophene/vinylene dihedral angles in model dimers
S-2TTV (blue dot), SO2 -2TTV (red square), and S-2TT (green diamond).
1 Design Principles for Organic Semiconductors 29
SO2-PTTV
1 S/SO2-PTTV-1:2
S-PTTV
0.8 S/SO2-PTTV-1:1
Absorbance
0.6
0.4
0.2
0
400 500 600 700 800 900
Wavelength (nm)
Figure 1.25: Absorption spectra of polymers as thin films on glass. The inset shows the highly
reflective, metallic luster of a film of S-PTTV.
The effect of the substituents was further analyzed via the redox behavior of the
synthesized polymers, as studied by cyclic voltammetry for thin films drop-cast on
Pt electrodes (Table 1.1). Compared to the alkyl-substituted C6 -PTTV [129], the sul-
fanyl substituents show a moderate electron withdrawing effect, shifting the
30 Julia A. Schneider, Dmitrii F. Perepichka
Table 1.1: Redox potentials,a HOMO–LUMO levels,b and band gapsc of polymers determined by
cyclic voltammetry of thin films.
Ered (V) Eox (V) LUMO (eV) HOMO (eV) EgCV (eV)
oxidation and reduction of S-PTTV by 0.08 and 0.20 eV, respectively. A much
larger shift is observed for sulfonyl-substituted polymer, SO2 -PTTV (0.67 and
0.63 V shifts for oxidation and reduction, respectively). The random copolymers S/
SO2 -PTTV-1:1 and S/SO2 -PTTV-1:2 show the electronic effects of both their mono-
mer units with reduction and oxidation onsets between those of S-PTTV and SO2 -
PTTV, giving them the smallest electrochemical gaps at 1.87 and 1.88 eV,
respectively.
A rather low hole mobility in thin-film transistors of 1 × 10 − 5 cm2 =Vs was
measured for S-PTTV, and no further improvement was achieved upon annealing.
A likely reason for the poor transistor characteristics of these materials lies in the
rotational disorder of the polymer chain and the resultant poor packing, caused by
the out-of-plane protrusion of the alkylsulfanyl substituents.
In bulk-heterojunction solar cell devices from polymer:PC70 BM blends S-PTTV
displayed slightly higher open-circuit voltages (VOC = 0.68 V) than reported for C6 -
PTTV (VOC = 0.60 V), as is expected due to its lower HOMO level. The trend contin-
ues for S/SO2 -PTTV-1:1, which has the lowest HOMO level and a high VOC of
0.80 V. Thus, we were able to directly tune the open-circuit voltage of the devices
by controlling the ratio of the substituents. The performances of both the S-PTTV
and S/SO2 -PTTV-1:1 devices were limited, however, by low short-circuit currents
(ISC ) and FF. Poor mobilities mean more chances for recombination at the interface
before holes and electrons can diffuse away, as well as an increase in the serial
resistance, resulting in low FFs [131, 132].
In conclusion, the sulfanyl and sulfonyl substituents show moderate and strong
electron-withdrawing effects and their combination in random copolymers is a
means to fine-tune optoelectronic properties and achieve low band gap polymers
(1.5 eV) without affecting the uniformity of the conjugated backbone. This method
can be a welcome alternative to designing more complex donor–acceptor motifs for
new polymeric semiconductors.
1 Design Principles for Organic Semiconductors 31
(a) (b)
It is important to remember that the conductance and valence bands are formed by
molecular orbital interactions, so not only must the molecules be closely packed,
but also their frontier molecular orbitals should be aligned as well. Figure 1.27
maps the electron coupling (t) of two cofacial pentacene molecules with respect to
long axis displacement. The molecular overlap is at its maximum when the mole-
cules are perfectly aligned and decreases in an oscillatory pattern that correlates
with the nodes of the HOMO orbitals. The electronic coupling (t) in a material can
be calculated from the crystal structures. In symmetric systems, t can be approxi-
mated by the energy splitting of the frontier orbitals in a dimer (for example, ΔE =
(HOMO – HOMO-1)/2 for hole transport) [133]. This approximation, called the en-
ergy-splitting-in-dimer approach (ESID), assumes both molecules in the dimer have
the same site energies, which will not be the case if the molecules inhabit different
environments in the crystal lattice. The energy-splitting-in-dimer method is, there-
fore, not reliable for extended systems where polarization effects of the crystal envi-
ronment on the site energies should be taken into account [134]. A better
calculation of t is the direct-coupling method, which calculates t from the wave
function of each molecule according to eq. (1.6)
32 Julia A. Schneider, Dmitrii F. Perepichka
300 Displacement
HOMO
LUMO 3.74 Å
200
100
t (meV)
–100
–200
0 2 4 6 8 10 12 14
Figure 1.27: Evolution of the HOMO and LUMO intermolecular electronic coupling (t) as a function
of displacement for two tetracene molecules with a π-stacking distance of 3.74 Å. The dotted line
indicates the magnitude of long-axis displacement found in rubrene crystals. Reprinted with
permission from Da Silva Filho al [135]. Copyright 2005 John Wiley & Sons, Inc.
J − 21 ðε1 + ε2 ÞS
t= (1:6)
1 − S2
where J is the charge transfer integral, S is the orbital overlap, and ε1 and ε2 are the
site energies of the molecules.
While predicting exact packing motifs is not generally possible, and the chance
of polymorphism is likely, morphological changes can be induced through molecu-
lar design. A few recent reviews have addressed this subject as it applies to poly-
mers and small molecules [136, 137]. What follows are a few examples of design
strategies based on noncovalent intermolecular interactions.
The solid-state packing of molecules is controlled by noncovalent effects,
namely, van der Waals and coulombic interactions. For example, in pentacene,
electron density lies in the π-orbitals above and below the plane of the molecule
and slightly positively charged hydrogen atoms lie along the periphery of the penta-
cene backbone. This generates a quadrupole moment, represented as a partial posi-
tive charge density sandwiched between two partial negative charge densities
(Figure 1.28a). Pentacene has many polymorphs [138], but all of them adopt a her-
ringbone arrangement to maximize electrostatic interactions between its partially
negative “face” and partially positive “edge.” (Figure 1.28a). This face-to-edge pack-
ing still allows for high electronic coupling between the different molecular dimers,
leading to high mobilities in pentacene films (μh 1 cm2 =Vs) [139] and single crys-
tals (μh 40 cm2 =Vs) [140].
1 Design Principles for Organic Semiconductors 33
(a)
(b)
Figure 1.28: (a) Pentacene’s herringbone face-to-edge packing is due to its quadrupole moment.
(b) In perfluoropentacene the herringbone packing is orthogonal with tighter π–π stacks. Section (b)
reprinted with permission from Sakamoto et al. [141]. Copyright 2004 American Chemical Society.
There are several ways to disrupt these electrostatic CH–π interactions and get
tighter π–π stacks. One way is to replace the hydrogens with heteroatoms. Per-
fluoropentacene, for example, has an inverse electron density distribution to pen-
tacene and is a well-known OSC for n-type transport due to the electron-
withdrawing nature of fluorine. The fluorine atoms affect the packing of the mole-
cules, in which CH–π interactions are replaced by F–F interactions between nearly
perpendicular molecules (Figure 1.28b). The CF–π interactions between molecules
of the same π-stack also greatly reduce their short-axis displacement (3.15 Å vs
5.34 Å in pentacene), thereby increasing the electronic coupling between cofacial
molecules [141, 142].
The use of bulky substituents is another oft-used strategy for controlling crys-
tal packing. Trialkylsilylethynyl groups have been extensively studied as substitu-
ents on oligoacenes because their size can be easily controlled. Anthony et al.
34 Julia A. Schneider, Dmitrii F. Perepichka
found that with smaller alkylsilyl groups (e.g., SiMe3 ), pentacene derivatives as-
semble into slipped stacks, but if the size of the substituent is approximately half
the length of the acene backbone, then a lamellar “brickwork” arrangement is ob-
served [145]. This type of packing in crystals of bis(triisopropylsilylethynyl)penta-
cene (TIPS-pentacene) leads to good electronic coupling between overlapping
pentacene cores (54 and 65 meV) and high mobilities (μh = 1.8 cm2 =Vs) (Figure
1.29a) [146, 147].
Okamoto et al. designed aryl and perfluoroaryl substituted tetracene as another
way to induce face-to-face packing of the acene core. Here, aromatic–fluoroaromatic
F
(a) (b)
F F
F F
Si Si
a
3.30 Å
0 3.35 Å
Figure 1.29: (a) Brickwork packing of TIPS-pentacene induced through bulky substituents.
Reprinted with permission from Anthony et al. [143]. Copyright 2001 American Chemical Society.
(b) Aromatic donor–acceptor interactions between substituents gives a lamellar brickwork assem-
bly in 5-perfluorophenyl-11-phenyltetracene. Reprinted with permission from Okamoto et al. [144].
Copyright 2011 American Chemical Society.
1 Design Principles for Organic Semiconductors 35
S S S S
S S S
S
S
S
S S
Dithienobenzodithiophene (DTBDT) Dinaphthothiophene (DNT-V)
μh = 1.7 cm2/Vs μh = 1.1 cm2/Vs
S
S
S S
Benzobisbenzothiophene (BBBT) Anthradithiophene
μh = 0.01 cm2/Vs μh = 0.3 cm2/Vs
Figure 1.30: Calculated HOMO orbital contours (B3LYP/6-31G(d)) and hole transport mobilities for
several thiophene-containing OSCs.
[80, 158]. “Bent” structural isomers of DNTT, however, exhibit much lower charge
mobilities due to 1D electronic coupling or electronic coupling between isolated
dimers. In addition, of the three isomers, only DNTT shows HOMO orbital coeffi-
cients on the sulfur atoms.
Finally, processing techniques can have a huge impact on the morphology of
the material [159]. The same molecule will display vastly different electronic proper-
ties depending on whether it was drop cast, spin coated, evaporated, annealed, or
grown as a single crystal. New solution-processing techniques like solution shear-
ing, in which a top wafer is dragged across the evaporating OSC solution, have suc-
ceeded in forming oriented crystalline thin films by physically straining the
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taken the holy prophets, and Christ and his apostles for your
example, to have labored with your hands, and not the false
prophets and false teachers, who sought to live upon the people,...
Christ shews that such stewards as those could not dig for their
living, and to beg they were ashamed....
And the true prophets, and Christ with his apostles have set us
better example.... Here you may see that Elijah was plowing ... here
Elisha went to Jordan with the sons of the prophets and cut down
wood.... Amos was a husbandman and a gatherer of wild figs....
Christ was a carpenter.... Paul was a tayler or tent-maker and
worked at it tho’ he were a travelling minister of the gospel,—and so
did the rest of the apostles, as is to be seen.... These examples, with
that apostolical command (to the elders of the church) Acts 20, 34,
35, ought to be attended by Christ’s ministers....
FROM REPLY TO PETER PRATT.
John Rogers, 2d.
He further says:
Sept. 14, 1766. Some of our people went and sat down some
distance from the priest’s house, and when he came out to go to
meeting, they walked with him and endeavored to have some
friendly discourse with him concerning the things of God; But the
priest would not talk with them about the things of God. However,
they walked with him and talked to him, but before they came to the
meeting house, justice Coit began to kick them in a furious manner,
especially the women. Also one of the townsmen fell upon them,
punching both men and women with a staff in a cruel manner, so
they were driven by some of the people to the upper end of the
town.
The next first day of the week, being the 21st of Sept., as some of
us were setting by the side of a house, between meetings, about
four or five rods from the priest’s house, saying nothing to any
person, the high-sheriff came, with some assistants and took us and
sent for justice Coit, who came and committed eight men of us to
prison. And on the 26th day of the same month, justice Coit came to
the prison, and we were taken out and brought before him, and he
charged us with disturbing the minister’s peace. We told him we had
no thought of doing the minister any hurt. Justice Coit answered,
that he did not suppose that we intended to strike him or wrestle
with him, nor did he suppose we intended to hurt a hair of his head,
but he supposed that we intended, when the minister came out, to
go along by his side and talk with him. So when justice Coit had
confessed that he did not suppose we intended to hurt a hair of the
priest’s head, he fined us five shillings each, and required bonds of
good behavior towards all his majesty’s subjects; but especially
towards the priest. But we refused to give such bonds, looking upon
the judgment to be very absurd, and that justice Coit’s supposing
that we intended to talk with the priest was not breach of the peace
in us, so he committed seven of us to prison again, all heads of
families, one of which men was in his 75th year. Four of these men
were kept in prison till the 13th of December following, and two
were set at liberty about the 28th of November, and one within a
few days after we were committed to prison.
Now after these men were committed to prison, our friends that
were at liberty thought it necessary that some of our people should
go on the first days of the week and set in the priest’s sight and not
fear them that persecute the body. But when the priest saw them
sitting in sight, if it were but a few women, he would not come out
of his house to go to meeting.... Also this behavior of the priest
occasioned much trouble to his poor flock, for sometimes the bell
would ring and the people sit waiting for their priest till it was time
for meeting to be half done: And then justice Coit, or some of the
rest of his sheep, were obliged to come and move the women out of
the priest’s sight, and guard their shepherd to the meeting house,
lest these women should speak to him of the things of God.
It was almost every day of the first days of the week for the whole
time of this imprisonment, which was near three months, that this
shepherd was kept in his house by the sight of our friends, and
sometimes only at the sight of a few women, and he never ventured
to come out till some of his sheep came and drove the women away.
But justice Coit committed no more of our friends to prison under
bonds of good behavior because he supposed they intended to talk
with the priest, after these men above mentioned. But the 23rd of
November, one of our men told the priest, after he was come out of
the meeting house, that he came to put him in mind how they kept
God’s children in prison, and that their worship was upheld by
cruelty. The priest answered to this effect, that they could uphold it
in no other way. Then the man replied it must certainly be of the
devil, if there was no other way to uphold it but by cruelty. But the
sheriff struck him twice on the head, and punched him with his staff
to prevent his speaking with the priest. And he and three women
were committed to prison, but at night they were set at liberty....
God said, Jer. 1, 7,—“Thou shalt go to all that I shall send thee, and
whatsoever I command thee thou shalt speak.” Also the apostle Paul
exhorteth us to be followers of him as he was of Christ, I Cor. XI. 1.
And Paul spent much time in going from place to place, disputing in
the synagogues on the Sabbath days, as appears in the Acts of the
Apostles. And no doubt they built their synagogues, and thought, as
our neighbors do, that they had a natural right to worship in them
and that the apostle had no right to oppose them in their worship,
for they were as much offended at the apostle as our neighbors are
at us, for they called him a pestilent fellow, and said he was a mover
of sedition throughout the world, Acts XXIV. 5. Also speaking of Paul
and Silas they said, Acts XVII, “These that have turned the world
upside down, are come hither also.”
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