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Mel ZG512 Ec-2r First Sem 2024-2025

The document outlines the details for the Mid-Semester Test for the course MEL ZG512 on Optoelectronic Devices, Circuits & Systems at Birla Institute of Technology & Science, Pilani. It includes the exam date, nature of the exam, weightage, duration, and a series of seven questions covering topics such as silicon crystal structure, Miller Indices, LED characteristics, laser modes, and photodiode calculations. Students are instructed to follow specific guidelines for answering the questions.

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18 views2 pages

Mel ZG512 Ec-2r First Sem 2024-2025

The document outlines the details for the Mid-Semester Test for the course MEL ZG512 on Optoelectronic Devices, Circuits & Systems at Birla Institute of Technology & Science, Pilani. It includes the exam date, nature of the exam, weightage, duration, and a series of seven questions covering topics such as silicon crystal structure, Miller Indices, LED characteristics, laser modes, and photodiode calculations. Students are instructed to follow specific guidelines for answering the questions.

Uploaded by

jagguvlsi94
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOC, PDF, TXT or read online on Scribd
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Birla Institute of Technology & Science, Pilani

Work Integrated Learning Programmes Division


First Semester 2024-2025

Mid-Semester Test
(EC-2 Regular)

Course No. : MEL ZG512


Course Title : OPTOELECTRONIC DEVICES, CIRCUIT & SYSTEMS
Nature of Exam : Closed Book
Weightage : 30% No. of Pages =2
Duration : 2 Hours No. of Questions = 7
Date of Exam : 21/09/2024 (EN)
Note to Students:
1. Please follow all the Instructions to Candidates given on the cover page of the answer book.
2. All parts of a question should be answered consecutively. Each answer should start from a fresh page.
3. Assumptions made if any, should be stated clearly at the beginning of your answer.

Q.1 Silicon (Si) has a diamond crystal structure. Compute packing factor (APF), co-
ordination number and number of atoms per unit cell. 5 Marks

Q.2 Find the Miller Indices for the planes A and B in the following figure

4 Marks

Q.3 A double heterojunction InGaAsP LED emitting at a peak wavelength of 1250 nm has a
radiative and non-radiative recombination time of 30 and 100 ns, respectively. The drive
current is 35 mA. Find the internal quantum efficiency and the internal power level.
5
Marks

Q.4 A laser has a refractive index of 1.55 and a crystal length of 5 cm. Determine the number
of longitudinal modes and their frequency separation for a peak emission wavelength of
0.6 µm. 5 Marks

Q.5 A GaAs Laser with a length of 490 µm has = 10/cm. The threshold gain of the Laser is
38/cm. Find the reflectivities r1 = r2 of the uncoated facets for the above Laser.
3 Marks

Q.6 The Intrinsic carrier density at room temperature in Ge is 2.37 × 10 19


m3. Calculate the resistivity if the electron and hole mobilities are 0.4
and 0.2 m2v–1s–1, respectively.
3 Marks
Q.7 A photodiode with a quantum efficiency of 68% was incident by photons of energy
2 x 10-19 J. Calculate
a. The photodiode operating wavelength. 2Marks
b. For a photocurrent of 3 µA, the required incidental optical power with the above
operating conditions. 3 Marks

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