Stability Analysis For A Semiconductor Laser in An External Cavity
Stability Analysis For A Semiconductor Laser in An External Cavity
dt
= zE(t - 7). (1)where Eo(t)and $ ( t ) are real-valued and supposed to be slowly
varying. From (l), (3), and (6) we derive the following equa-
To simplify the discussion we have not included the spontane- tions for Eo and $.
ous emission term in (1). However, it will be included in a later
section (Section IV). The model does not take into account
the spatial distribution of the field amplitude and the carrier
density N. The effects of lateral carrier diffusion and spatial
hole burning are therefore not included.
The term on the right of (1) is the field reflected from the
external cavity with time delay r. The factor z is given by z = where
K f d where fd is the frequency spacing between the longitudinal
modes of the solitary laser, and K* is the level of optical feed- A ( t ) = 007 + $ ( t ) $ ( t - 7 ) . (11)
back, i.e., the fraction of power coupled back into the lasing Inadditiontothe field equations(lOa)-(lOb) we have the
mode. We assume K << 1, so that multiple reflections can be rate equation for the carrier density
ignored.
Themodal gain per second andthephotonlifetime are d
- N =J -
denoted by G ( N ) and T ~ respectively.
, In the absence of feed- dt
back the threshold carrier density Nth is determined by
J is the pumping term and r, is the carrier lifetime. The equa-
1 tions (loa)-( lOcJ constitute our basic model.
G(Nth)= ~.
TP B. Stationary Solutions
G ( N ) is assumed to be linear, i.e., Any stationary solution to (lOa)-(lOc)can be written as
-
Eo(t)= Eo, $ ( t ) = A u t , N ( t ) = N ,
G ( N ) = G d N - No),
GN and No being constants.
(3)
- -
where E o , A o , and N are time-independent.
(12)
Aw is the sta-
The angular optical frequency o ( N ) is given by the Fabry- tionary shift in angular frequency due to the external cavity.
Perot resonance condition By inserting (1 2) in (loa)-( 1Oc) we obtain the following equa-
tions for the stationary solutions.
n(w,N)o(N)=pncl-' (4) -
G N A N = - 2 z COS OT (13)
forthepth longitudinal mode. 1 is thelength of the laser
diode, c is the speed of light: and n(o,N ) is the effective w - w o = - z ( a cos o r f sin or). (14)
refractive index.
We shall assume that the solitary laser oscillatesin a single
longitudinal mode with ahgular frequency
where
a 0 = U(Nth) (5)
W = W ~+ Ao (16)
for some fixed value of p . The carrier density N will in general
be close to thethreshold value N t h , so that we can expand
-
is- the angular frequency of the composite system. Also, A N =
o ( N ) to first order in A N = N - Nth. By (4) N - Nth, and E, is the stationary field amplitude for the soli-
tary laser. The stationary solutions are obtained by first solving
-
the phase condition(14) for o. Equations (13) and(15)
give the corresponding values for N and Eo.
-
where n* = n + oo(anlaw) is the effective group index, and The phase condition (14) may have multiple solutions corre-
sponding to multiple externalcavity modes. The laser tends to
2w0 an oscillate in the mode which has thelowest threshold gain. This
a = - -__ (7) mode is therefore the dominant mode. The threshold gain is
n*GN aN
given by
for N = Nth. a! is the parameter that gives the strength of the
coupling between phase and amplitude of the electric field as - 1
G ( N )= - - 22 cos or. (17)
discussed in the introduction. An equivalent but more basic TP
TROMBORG et al.: SEMICONDUCTOR LASER IN AN EXTERNAL CAVITY 1025
Hence the dominant mode is the mode for which the excess
gain
A G = G,AN=
- -22 COS 07 (18)
is minimum.
-lr 0 7T
Y (rad)
(b)
Fig. 2. (a) Graphical representation of the phase condition (26) using
the parameters 6 and y . (b) Corresponding excess gain. Eachhori-
zontal line in (a) represents the situation in a particularintervalof
Fig. 1. The point ( y m , e,) is a local maximum (cf. Section 111-B).
Since the excess gain is minimum for y = 0 the line (33a) corre-
e=y+zT(siny+acosy) 1b) (3
sponds to solutions of optimum gain. The asymptotes (33b)
for the phase-condition limit in the (a, 0)-plane for - 7r < y < correspondtothe same external cavity modeforthe same
w. The curves are shown in Fig. 3(a)-(c) for the three cases value of a.
z7 < 1, ZT = 1, and ZT > 1. The region a < 0 is unphysical, but As y o varies from - 7r to 7r the phase-condition limit appears
is included in the figures to emphasize the symmetry. as the envelope to the lines(32), Le., it is acaustic. At the
For fixed y = y o the phase condition same timethe lines will sweep over the shadedareain Fig.
3(a)-(c). We can thereforeconcludethat (25) will have a
0 = y o + z~ (sin yo + a cos yo) (32) solution in the range - n < y < 7r if and only if (a,0) lies in
describes a line in the (a,0)-plane. The line can be shown to the shaded region. From the form (26) it is clear that it has
be a tangent tothephase-condition limit equations(31a)- at most three solutions. For each point (a,e ) in the shaded
(31b)atthepoint given by y = y o . It follows from(31a) area we shall denote the solution with minimum excess gain
as the first sheet solution. In Fig. 3(a)-(c) the curve sections
that I a I -+ ~0 for y + 0, k7r. The lines
corresponding to first sheetsolutions are drawnwiththick
fore = zra y o = 0, (334 line while the others are drawn with thin line.
0 = + nfor
- z7a yo = + n (33b) Thepropermathematicaldescriptionofthephase-condi-
tion limit is within the field of catastrophe theory. Thus the
arethereforetheasymptotestothephase-conditionlimit. limit in Fig. 3(a) shows a cusp catastrophe while the limit in
TROMBORG et al.: SEMICONDUCTOR LASER IN AN EXTERNAL CAVITY 1027
e( y ‘ ) - e( y “ ) = 27rq
for some integer q. By (25) this implies that
sin ( q_
_ ’ ) -~(- 1)4+’
r - y_
(34)
q7r - Y’ zr
The limit for the dominant mode is given by the solution to
(34) with minimum excess gain, i.e., with minimum y’. It can
be shown that this is the solution for q = 1. This means that -720 -360 0 360 720
the frequency of the dominant mode will jump for y = ‘y’ e (deg.)
where
(C)
Let &E,6q5, and 6N denote the deviation from the stationary +so& + z a g ( c o s y a- s i n y ) ( l - e-"). (44)
solution. To first order they obey the equations
We have the limiting case when a zero of D(s) passes the imagi-
S&(t) + z COS y [6E(t)- 6E(t - T)] nary axis, i.e., when s = ja is a zero of D(s) for R # 0. The
1 fixed zero of D(s) for s = 0 does not influence the stability.
+ zEo siny [s@(t>
- s@(t- r)] - - G~E,,:oN(~) By inserting s = jL! in (44) the real and imaginary parts give the
2
following two conditions forhaving a zero ofD(s) on theimag-
inary axis
Z
- - sin y [6E(t)- 6E(t - r)]
E O
1
Z COSY
-I [6$(t)- 6 @ ( t- T)] + 6d(t) - - G~a6N(t)
2
= F@J
(t), (39b)
2E0 1
- 6E(t) + Siir(t) -I - 6N(t) Equation (46) gives an explicit expression for r as a function
TP TR of R
= FN (t>
where F,, FQ,and FN are Langevin noise terms, which account
(39c)
7=
2
-
R
{ arccot [% (a2 -
1 1+pn (47)
for the spontaneous emission noise [26] . In the following we
for integer p ( p > 0). The curves are shown in Fig. 5 for rR =
neglect the carrier noise FN ( t ) which is usually less important
1 ns and OR 1271 = 2.55 GHz as derived from the parameters in
[ 1 11 , [26]. The parameter rR in (39c) is given by
Table I. For fixed r , the solutions to (46) give the positions
1 1 - +~ ~ 2 2 . (40) wherethe zeros of D(s) may pass the imaginaryaxis. It is
interesting that these positions depend only on r and not on 01
TR rs
or the external cavity parameters K and mor.
The criterion for stable operation is that the determinant for The limit of stable operation is reached when a zero of D(s)
the Laplace transform of (39a)-(39c) first passes the imaginary axis. Supposethishappens at s =
jRo . The solution Ro to (46) will generally be the one which
D(s) = s3 + s2 ;[ 1 + 2 z cosy(l - e-s7)] is closest to O R . Thus L!O = W R for W R r = ( 2 p + 1) 71. When
there are two solutions at about the same distance from O R
one may determine the limit corresponding to both solutions.
I 1
Z
+ s z2(1 - e-")' + 2 - cosy(1 - e - S T ) + w$ In Fig. 6 we have shown the positions of the zeros ofD(s) for
TR
Q = 3, K = 2 . lo-', r = 5 n / w R [i.e., z r = 2.45, which is the
+ [$ (1 - e-87)'
case shown in Figs. 3(c) and 4(c)] and for two values of mor.
The parameter d is the detuning definedas the change in phase
mor fromits value atoptimum gain (i.e., for y = 0). The
+ zwi (cosy - a sin y ) (1 - e-")
@=[(I - 2 (-)i)cosy
I G a i n coefficient GN
O=y+zr(siny+acosy) (48b)
I
~~~
for -77 < y 5 71. It is seen to have the same form as the repre-
, Photonlifetime
I, curves (48a) and (31a) intersect for some value o f y the limits
' Normalized bias current I/I, 1.3
i (48a)-(48b) and (31a)-(31b) have a common tangent at the
point (a, 0) given by that value of y . As for the gain-condition
Threshold carrler denslty 1.55.10*~~-~
Nth
limit Bz the tangent point divides the pulsation limit into two
branches where only one of the branches corresponds t o first
sheet solutions.
If we introduce the pulsation limit in Fig. 4(a)-(c) we get
the results shown in Fig. 8(a)-(c). As in Fig. 4(a)-(c) we have
only included the limits corresponding to first sheet solutions.
For the limit B1 we only show the branches, which appear as
bistabilitylimits.The final stability region is shown as the
shaded area. It is ageneral featurethatthestability region
decreases with increasing a, due to the asymptotic approach
of the phase-condition and pulsation limitsto the line of opti-
mum gain. In Fig. 8(c) we notice that the stability region is
bounded by the gain-condition limits on bothsides in an inter-
-3 -2 -1 0 1
val of CY around 0. This interval increases with increasing feed-
Re(s) rR
5n. -
Fig. 6 . The complex zeros of D ( s ) for a = 3, K = 2 . lo-' and WRT =
: d = 0 " ; --=-- : d = -100". The frequencies obtained
from Fig. 5 are marked on the imaginary axis.
back level. For values of a in the interval the width of the
stability region is 360" in the 0-direction.
V. THESTABLETUNINGRANGE
where the zeros areallowed to pass according to (46). The solid Inthe previous sections we have determinedthestability
curve corresponds to the case of optimum gain and the dashed region in the (a, 0)-plane for fixed cavity length and for three
curve corresponds to a situation near the limiting case where a characteristic levels ofopticalfeedback. However, it is the
zero enters the right half s-plane. The zeros are seen to move region of stable operation for fixed a , but varying phase m o r ,
almost horizontally. The zeros with imaginary part less than cavity length, and optical feedback whichis directly related to
W R move toward the imaginaryaxis for decreasing detuning the experimental situation.
while the other zeros move away from the axis. In practice, one may adjust the phase o 0 r to a value of opti-
The zeros of D(s) give rise to resonance poles in the transfer mum gain. As mentioned in the previous section we denote
functions for the system (39a)-(39c). Theywill therefore show the deviation ofmor from this value as the detuningd . Within
1030 JOURNAL
IEEE OF QUANTUM ELECTRONICS, VOL. QE-20, NO. 9, SEPTEMBER 1984
VI. CONCLUSION
We have presented a detailed theoretical analysis of the sta-
bility properties for a semiconductorlaser in an externalcavity.
The theory is based on three position-independent rate equa-
tions for the carrier density and the amplitude and phase of
the laser field. I t takes intoaccounttheimportant carrier
density dependence of the refractive index, expressed by the
parameter a which is also known as thelinewidthenhance-
ment factor.
The stability region has been calculated as a function of the
feedback power level, the external cavity length, thephase cd07
of the reflected signal (in the limit of no optical feedback),
and the a-parameter. Three types of stability limits have been
-720 -360 0 360 720 identified: A is the phase-condition limit where the oscillation
8 (de57.J
frequency jumps to another external cavity mode because the
actual mode ceases to be a solution, B is the gam-condition
(C)
limit where the oscillation frequency jumps to another exter-
Fig. 8. The final stability region in the (a,8)-plane for the same param- nal cavity mode with a more favorable gain, and Cis the limit
eters as in Fig. 4 and W R T = 5n. (a) z r = 0.245; (b) zr = 1;(c) 2 7 =
2.45. The pulsation limit C depends explicitly on the value of z and for the onset of feedback-induced pulsations. The former two
r , whereas the limits A , B1, and B2 depend on the product27. limitsrepresenta bistable situation,wheremorethanone
TROMBORG et al.: SEMICONDUCTOR
ANLASER IN EXTERNAL CAVITY 1031
with optical feedback,” Electron. Lett., vol. 19, pp. 1068-1070, Member of the Telecommunication Research Laboratory, Copenhagen,
the at stationed
Dec. 1983. Electromagnetics Institute, Technical University of
M. Tamburrini, P. Spano,and S. Piazzola, “Influence of anexter- Denmark. His presentwork is on OTDR-technique and physics of
nal cavity on semiconductor laser phase noise,” Appl. Phys. Lett., optoelectronic devices.
vol. 43, pp. 410-412, Sept. 1983.
P. Spano. “High frequency phase-noise in semiconductor lasers,” in
Pro;. 9thEC6C, G&eva,-Switzerland, Oct. 1983, pp. 131-133. Jens Henrik Osmundsen was born on August 8,
A. E. R. Woodcock and T. Poston, A Geometrical Study of the 1958. He received the M.Sc. degree in electrical
Elementary Catastrophes. New York: Springer-Verlag, 1974. engineering from the ElectromagneticsInsti-
K. Kikuchi, T. Okoshi, and H. Ishigami, “Measurement of spec- tute, Technical University of Denmark, Lyngby,
tral purity of GaAlAs lasers” (in Japanese), Rec. Opt. Quantum in 1982, and is now working towards the Ph.D.
Electron. IECEJapan, vol. OQE83-23, pp. 25-32, June 1983. degree.
E. Patzak, H. Olesen, A. Sugimura, S. Saito, and T. Mukai, “Spec- His research interests are primarily within the
tral linewidth reduction in semiconductor lasers by an external field of semiconductor laser stabilization and
cavity with weak optical feedback,” Electron. Lett., vol. 19, pp. optical feedback effects on laser properties.
938-940, Oct. 1983.
R. Schimpe and W. Harth, “Theory of FM noise of single-mode
injection lasers.” Electron. Lett., vol. 19, pp. 136-137,Feb.
1983.