EXPERIMENT 3

ELECTRONIC DEVICES
ELECTRONIC lab (706453)

Instructor: Dr. Milad Olaimat

Engineer: Eng. Nidaa Qarqaz

Author Name: 2100706016 ‫محمود محمد الخاليلة‬

Partner Name: 2100706024 ‫يوسف خالد دراوشة‬
2100706066 ‫علي محمد الخاليلة‬
2100706023 ‫كامل طاهر إعباسي‬
2100706025 ‫أحمد خالد العبسي‬
2100706025 . ‫سليمان عماد‬

Experiment Contacted on: 17/12/2024

Report Submitted on: 18/12/2024

Al Albayt University
School of Sustainable and
Renewable Energy
Department of Engineering
 Table of Contents

OBJECTIVES .............................................................................................. 1

INTRODUCTION .........................….......................................................... 1

EQUIPMENT and COMPONENTS USED .............................................. 1

PROCEDURE ........................................……….........…………………......2

Unit 1 ......................................................................................................... 2

Unit 2 ..........................................................................................................3

Unit 3 ......................................................................................................... 4

Unit 4 ………………………………......................................................... 5

Unit 5 ………………………………………………….………………… 5

DATA AND CALCULATIONS ...................…………………..................6

Unit 1 .......................................................…...............................................6

Unit 2 .....................................................….................................................8

Unit 3 ..........................................................................................................10

Unit 4 ……………………...….…………………………………………..11

Unit 5 ……………………………………………….…………………….12

CONCLUSIONS ......................................................................................... 13

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 OBJECTIVES
 Verify the integrity of BJT junctions using an ohmmeter.
 Analyze input and output characteristics of a BJT in common emitter
configuration.
 Record output characteristics of a BJT in common base configuration.
 Study the base polarization of a BJT and construct the static load line.
 Investigate emitter polarization of a BJT and build the static load line.

BACKGROUND THEORY (or INTRODUCTION)

BJTs operate based on diode-like junctions, where specific resistances depend on
whether the junction is forward or reverse biased. In the common emitter configuration, the
base current controls the collector current, allowing the transistor to amplify signals. In the
common base configuration, the emitter current drives the collector current, resulting in low
input impedance and high output impedance. Base polarization plays a crucial role in
establishing the operating point of the transistor, which affects its stability during operation.
Additionally, emitter polarization ensures proper voltage and current distribution, ensuring
the efficient functionality of the transistor.

EQUIPMENT and COMPONENTS USED

Digital Multimeter (Brand: Good Will Instruments Co. Ltd, Model:

GDM-8351)

Power Supply (Brand: De Lorenzo, Model: DL-3155AL2)

Transistor

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 PROCEDURE

Unit 1: Verification of the Integrity of BJT Junctions

1. Insert the Module DL 3155M13 in the console and set the main switch to ON.

2. NPN Transistor:

- Connect the positive terminal of the multimeter or an analog tester, set as ohmmeter (on some
multimeters the range is marked with the diode symbol), to the base of the transistor V1 and the
negative one to the emitter (Fig.1.2a).

- Write in Tab.1.1 if the recorded resistance results low or high.

- Invert the position of the ohmmeter terminals, so that the positive terminal is connected to the
emitter and the negative one is connected to the base (Fig.1.2a).

- Write in Tab.1.1 if the recorded resistance results low or high.

- Move the positive terminal of the ohmmeter on the base of the transistor V1 and the negative one
on the collector (Fig.1.2b).

- Write in Tab.1.1 if the recorded resistance results low or high.

- Invert the position of the ohmmeter terminals, so that the positive terminal is connected to the
collector and the negative one is connected to the base (Fig.1.2b).

- Write in Tab.1.1 if the recorded resistance results low or high.

- Move the positive terminal of the ohmmeter on the collector of the transistor V1 and the negative
one on the emitter (Fig.1.2c).

- Write in Tab.1.1 if the recorded resistance results low or high.

- Invert the position of the terminals and write in Tab.1.1 if the recorded resistance results low or
high.

- Observe Tab.1.1 and ensure the following:

1. The base-emitter junction provides a low resistance.

2. The emitter-base junction provides a high resistance.

3. The base-collector junction provides a low resistance.

4. The collector-base junction provides a high resistance.

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 5. The collector-emitter junction provides an infinite resistance.

6. The emitter-collector junction provides an infinite resistance.

3. PNP Transistor:

- Repeat the previous operations also for the transistor V2 by setting the ohmmeter terminals like
in Fig.1.3.

- Write in Tab.1.2 if the recorded resistance results low or high.

- Observe Tab.1.2 and ensure the following:

1. The base-emitter junction provides a high resistance.

2. The emitter-base junction provides a low resistance.

3. The base-collector junction provides a high resistance.

4. The collector-base junction provides a low resistance.

5. The collector-emitter junction provides an infinite resistance.

6. The emitter-collector junction provides an infinite resistance.

Unit 2: Record of the Input and Output Characteristics of a

BJT in Common Emitter Configuration
1. Insert the Module DL 3155M13 in the console and set the main switch to ON.

2. Input Characteristics:

- Connect the multimeters as in Fig.2.2a.

- Turn the potentiometer R1 completely counter clockwise.

- Adjust the voltage +V to read a collector-emitter voltage of 5V.

- Move the terminals of the voltmeter to jack 2 and the ground.

- Adjust R1 for all the values of the base-emitter voltage written in Tab.2.1.

- Write in Tab.2.1 the values of the measured base and collector current.

- Calculate the value of hFE and write it in Tab.2.1.

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 - With the obtained values, draw in Fig.2.3 the characteristics of the base current as a function of
the base-emitter voltage [IB = f(UBE)] with UCE constant.

- Draw in Fig.2.4 the characteristics of the collector current as a function of the base curren t [IC =
f(IB)] with UCE constant.

- Draw in Fig.2.5 the trend of the static parameter hFE as a function of the collector current [hFE =
f(IC)] with UCE constant.

3. Output Characteristics:

- Connect the multimeters as in Fig.2.6b.

- Adjust the potentiometer R1 until obtaining a base current IB = 10 µA.

- Adjust the voltage +V from 0 to 10V and read the values of IC in correspondence with the
different values of UCE shown in Tab.2.2.

- Write in Tab.2.2 all the measured current values.

- Repeat the procedure shown for every value of IB set in Tab.2.2.

- With the obtained values, draw in Fig.2.6 the output characteristics of the collector current as a
function of the collector-emitter voltage [IC = f(UCE)] for all the values of IB.

Unit 3: Record of the Output Characteristics of a BJT in

Common Base Configuration
1. Insert the Module DL 3155M13 in the console and set the main switch to ON.

2. Connect the multimeters as in Fig.3.3.

3. Turn the potentiometer R1 until obtaining an emitter current IE = 1mA.

4. Adjust the voltage +V from 0 to 10V and read the values of IC in correspondence with the
different values of UCB shown in Tab.3.1.

5. Write in Tab.3.1 all the measured current values.

6. Repeat the procedure for each value of IE set in Tab.3.1.

7. Connect the -V generator in place of +V and adjust the voltage to -5V.

8. Verify that the UCB voltage is approximately -0.8V with R1 potentiometer turned fully
clockwise.
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Unit 4: Base Polarization of a BJT Transistor
1. Insert the Module DL 3155M13 in the console and set the main switch to ON.

2. Connect the multimeters as in Fig.4.2a.

3. Read the values of UBE (jack 3-GND) and UCE (jack 4-GND) and write them in Tab.4.1.

4. Calculate the corresponding currents IB and IC and note the values in Tab.4.1.

5. Calculate the static gain of the transistor and note the values in Tab.4.1.

6. Apply heat to the transistor using a soldering iron and observe changes in the collect or-emitter
voltage and collector current.

7. Calculate the operation points in saturation (IC(sat)) and in cutoff (UCE(off)) on the load line,
writing the results in Tab.4.1.

8. Draw in Fig.4.3 the load line, considering the extreme points IC(sat) and UCE(off).

9. Write in Fig.4.3 the rest point Q with coordinates IC and UCE, ensuring it lies on the static load
line.

10. Make sure that the potentiometer R1 is turned completely counter clockwise.

11. Replace resistance R2 with R1, connecting the circuit as in Fig.4.2b.

12. Slowly turn R1 and record five values of IB between 10 and 300 µA and the corresponding
values of UCE in Tab.4.2.

13. Calculate IC with the measured values of UCE and write the result in Tab.4.2.

14. Write the points on the static load line in Fig.4.3.

Unit 5: Emitter Polarization of a BJT Transistor

1. Insert the Module DL 3155M13 in the console and set the main switch to ON.

2. Connect the multimeters as voltmeters to measure voltages at UE, UB, and UC (as in Fig.5.2).

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3. Record the values in Tab.5.1 and calculate the corresponding currents IB, IC, and note them in
Tab.5.1.

4. Calculate the static gain of the transistor and note the result in Tab.5.1.

5. Measure the collector-emitter voltage UCE (jacks 2 and 3) and write the value in Tab.5.1.

6. Apply heat to the transistor with a soldering iron, observing changes in UCE and IC.

7. Calculate the operation points in saturation (IC(sat)) and in cutoff (UCE(off)) on the load line.

8. Draw in Fig.5.2 the load line, considering the extreme points IC(sat) and UCE(off).

9. Write in Fig.5.2 the rest point Q with coordinates IC and UCE.

DATA AND CALCULATIONS

Unit 1 :

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Tables 1.1 and 1.2

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Unit 2 :

9
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Unit 3 :

11
Unit 4 :

12
Unit 5 :

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CONCLUSIONS

 Proper junction behavior confirms the operational integrity of the transistor.

 Input-output characteristics validate the BJT's amplification capability in common
emitter configuration.
 Output characteristics demonstrate the dependence of collector current on emitter
current and collector-base voltage in common base configuration.
 Base polarization affects the static load line and determines the transistor’s stability.
 Emitter polarization influences the work points and ensures proper operation of the
transistor in the circuit.

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