DATA SHEET

MOS INTEGRATED CIRCUIT

µPD16813
MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT

DESCRIPTION
The µPD16813 is a monolithic dual H bridge driver circuit which uses power MOS FETs in its driver stage. By
complementing the P channel and N channel of the output stage, the circuit current has been substantially inproved
as compared with that of conventional charge pump drivers.
The µPD16813 is therefore ideal as the driver circuit of the 2-phase excitation, bipolar-driven stepping motor for
the head actuator of an FDD.

FEATURES
• Low ON resistance (sum of ON resistors of top and bottom transistors)
RON = 2.0 Ω TYP.
• Low current consumption: IDD = 100 µA MAX.
• Noise reduction circuit that operates when INC is OFF.
• Compact surface mount package: 16-pin plastic SOP (300 mil)

PIN CONFIGURATION (Top View)

VM1 1 16 NC

1A 2 15 1B

PGND1 3 14 PGND2

2A 4 13 2B

VDD 5 12 VM2

IN1 6 11 SEL

IN2 7 10 NC

INC 8 9 DGND

ORDERING INFORMATION

Part Number Package

µPD16813GS 16-pin plastic SOP (300 mil)

Document No. S10590EJ2V0DS00 (2nd edition)

Date Published July 1997 N
Printed in Japan
© 1997
 µPD16813

BLOCK DIAGRAM

VDD

VM

VM1
+
IN1
1A

‘‘H” BRIDGE 1
IN2
1B

PGND1
SEL CONTROL
CIRCUIT
VM2

INC
2A

‘‘H” BRIDGE 2
2B

DGND PGND2

FUNCTION TABLE

• In stop mode (SEL = High)

Excitation Direction INC IN1 IN2 H1 H2

<1> H H H F F
<2> H L H R F
<3> H L L R R
<4> H H L F R
H1 F
– L × × Stop
<4> <1>

• In brake mode (SEL = Low) H2 R H2 F

Excitation Direction INC IN1 IN2 H1 H2

<1> H H H F F <3> <2>

<2> H L H R F H1 R
<3> H L L R R
<4> H H L F R

– L × × Brake

F : Forward
R : Reverse
× : Don’t care

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 µPD16813

FORWARD REVERSE STOP BRAKE

VM VM VM VM

ON OFF OFF ON OFF OFF OFF OFF

A B A B A B A B

OFF ON ON OFF OFF OFF ON ON

ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)

Parameter Symbol Rating Unit

Supply voltage (motor block) VM –0.5 to +7 V

Supply voltage (control block) VDD –0.5 to +7 V

Power consumption Pd1 0.862Note 1 W

Pd2 1.087Note 2

Instantaneous H bridge driver current ID (pulse) ±1.0Note 2, 3 A

Input voltage VIN –0.5 to VDD + 0.5 V

Operating temperature range TA 0 to 60 °C

Operation junction temperature Tj MAX. 150 °C

Storage temperature range Tstg –55 to +125 °C

Notes 1. IC only
2. When mounted on a printed circuit board (100 × 100 × 1 mm, glass epoxy)
3. t ≤ 5 ms, Duty ≤ 40 %

Pd – TA Characteristics
1.2
When mounted
on printed circuid boad

1.0
Average power consumption Pd (W)

IC only

0.8

0.6

0.4

0.2

0 20 40 60 80
Ambient temperature TA (˚C)

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 µPD16813

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol MIN. TYP. MAX. Unit

Supply voltage (motor block) VM 4.0 5.0 6.0 V

Supply voltage (control block) VDD 4.0 5.0 6.0 V

H bridge driver currentNote IDR ±310 mA

Operating temperature TA 0 60 °C

Note When mounted on a printed circuit board (100 × 100 × 1 mm, glass epoxy)

ELECTRICAL SPECIFICATIONS (Within recommended operating conditions unless otherwise specified)

Parameters Symbol Conditions MIN. TYP. MAX. Unit

OFF VM pin current IM VM = 6.0 V, VDD = 6.0 V 1.0 µA

VDD pin current IDD 0.1 mA

Control pin high-level input current IIH VIN = VDD 1.0 µA

Control pin low-level input current IIL VIN = 0 V –1.0 µA
Control pin high-level input voltage VIH 3.0 VDD + 0.3 V

Control pin low-level input voltage VIL –0.3 0.8 V

H bridge circuit ON resistanceNote 1 RON1 VM = 5 V, VDD = 5 V 2.0 4.0 Ω

RON relative accuracy ∆RON Excitation direction <2>, <4>Note 2 ±5 %

∆RON Excitation direction <1>, <3> ±10

H bridge circuit propagation delay tPHL VM = 5 V, VDD = 5 V,Note 3 2.0 2.5 µs

time TA = 25 °C, RM = 20 Ω

H bridge circuit propagation delay tPLH 0.4 0.65 µs

time

H bridge circuit rise time tTHL VM = 5 V, VDD = 5 V,Note 3 0.2 0.4 µs

H bridge circuit fall time tTLH TA = 25 °C, RM = 20 Ω 0.1 0.2 µs

Notes 1. Sum of ON resistances of top and bottom transistors

2. For the excitation direction, refer to FUNCTION TABLE.
3.

INC

TPHL TPLH

IM
TTHL TTLH

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 µ PD16813

CHARACTERISTIC CURVES

RON vs. Tj Characteristics RON vs. VDD (=VM) Characteristics

4 4
RON = 20 Ω

H bridge ON resistance RON (Ω)

3
H bridge ON resistance RON (Ω)

2
2

0
4.0 5.0 6.0
Supply voltage VDD (=VM) (V)
0 25 50 75 100 125 150
Operation junction temperature Tj (˚C)

TPHL – TA Characteristics TPLH – TA Characteristics

4 0.8
H bridge circuit propagation delay time TPLH (µs)
H bridge circuit propagation delay time TPHL (µs)

0.7

3 0.6

0.5

2 0.4

0.3

1 0.2

0.1

0 25 50 75 100 125 150 0 25 50 75 100 125 150

Operating temperature TA (˚C) Operating temperature TA (˚C)

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 µPD16813

16 PIN PLASTIC SOP (300 mil)

16 9

detail of lead end

P
1 8

A
H
I
G

J
F

K
L
E

B
C N

D M M

NOTE ITEM MILLIMETERS INCHES

Each lead centerline is located within 0.12 mm (0.005 inch) of A 10.46 MAX. 0.412 MAX.
its true position (T.P.) at maximum material condition. B 0.78 MAX. 0.031 MAX.
C 1.27 (T.P.) 0.050 (T.P.)

D 0.40 +0.10
–0.05 0.016 +0.004
–0.003
E 0.1±0.1 0.004±0.004
F 1.8 MAX. 0.071 MAX.
G 1.55 0.061
H 7.7±0.3 0.303±0.012
I 5.6 0.220
J 1.1 0.043

K 0.20 +0.10
–0.05 0.008 +0.004
–0.002

L 0.6±0.2 0.024 +0.008

–0.009
M 0.12 0.005
N 0.10 0.004
P 3 ° +7°
–3° 3° +7°
–3°
P16GM-50-300B-4

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 µPD16813

RECOMMENDED SOLDERING CONDITIONS

It is recommended to solder this product under the conditions described below.

For soldering methods and conditions other than those listed below, consult NEC.

Surface mount type

For the details of the recommended soldering conditions of this type, refer to Semiconductor Device Mounting
Technology Manual (C10535E).

Symbol of Recommended
Soldering Method Soldering Conditions
Soldering

Infrared reflow Peak package temperature: 230 °C, Time: 30 seconds MAX. (210 °C MIN.), IR30-00
Number of times: 1, Number of days: NoneNote

VPS Peak package temperature: 215 °C, Time: 40 seconds MAX. (200 °C MIN.), VP15-00
Number of times: 1, Number of days: NoneNote

Wave soldering Solder bath temperature: 260 °C MAX., Time: 10 seconds MAX., WS60-00
Number of times: 1, Number of days: NoneNote

Partial heating Pin temperature: 300 °C MAX., Time: 10 seconds MAX., –

Number of days: NoneNote

Note The number of storage days at 25 °C, 65 % RH after the dry pack has been opened

Caution Do not use two or more soldering methods in combination (except partial heating).

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 µPD16813

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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
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customer designated "quality assurance program" for a specific application. The recommended applications of
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before using it in a particular application.
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Anti-radioactive design is not implemented in this product.

M4 96.5

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