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Small Geometry Effect: For Theory

The document discusses the Small/Narrow Channel Effect in MOSFETs, which occurs when the channel width is comparable to the depletion region thickness, leading to changes in device characteristics. It highlights the increase in threshold voltage and gate-induced drain leakage (GIDL) due to the effects of narrow channel dimensions. Additionally, it addresses other small channel effects such as hot electron effect and time-dependent dielectric breakdown, which can degrade device performance over time.

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Harshit Dubey
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5 views8 pages

Small Geometry Effect: For Theory

The document discusses the Small/Narrow Channel Effect in MOSFETs, which occurs when the channel width is comparable to the depletion region thickness, leading to changes in device characteristics. It highlights the increase in threshold voltage and gate-induced drain leakage (GIDL) due to the effects of narrow channel dimensions. Additionally, it addresses other small channel effects such as hot electron effect and time-dependent dielectric breakdown, which can degrade device performance over time.

Uploaded by

Harshit Dubey
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Small Geometry Effect

(Narrow Channel Effect)


Somesh Kr Malhotra
Assistant Professor
ECE Department,UIEt,CSJM University

For theory:
Visit:someshkrmalhotra.wordpress.com
Small/Narrow Channel Effect
This occurs when channel width is
comparable to maximum depletion
region thickness.
Due to this there are change in
device charactersitics and are refer
as Narrow Channel Effects
Increase in Threshold Voltage

Figure below show the Narrow Channel MOSFET


Increase in Threshold Voltage
Fig. shows at both ends of the thin gate oxide layer there are
two thick field oxides (FOX) layer.
FOX is overlapped partially by the Gate electrode.
When we apply gate voltage, underneath the FOX relatively
shallow depletion regions are formed.
Hence, additional gate voltage is required
to support this extra depletion region charge.
Thus, the threshold voltage of the
MOSFET increases for narrow channel devices.
Gate-induced Drain Leakage

When VGS = 0, MOSFET is OFF: the drain current


must be zero.
But at VGS = 0, for large drain voltage there is a
leakage current in the device due to band-to-band
tunnelling of carriers. This leakage current is known as
gate-induced drain leakage (GIDL)
Other Small Channel Effect
HOT ELECTRON EFFECT
We are decreasing the Size of MOSFET in a very fast
rate due to which the horizontal and vertical electric
field is increasing in a drastic way.
Due to this increase in electric field the charge carriers
are getting extra Kinetic energies (hot carriers) are
injected into gate oxide which changes the oxide
interface charge distribution.
Degrading V-I characteristics
Other Small Channel Effect
TIME-DEPENDENT DIELECTRIC BREAKDOWN
Gate oxide thicknes is also getting reduced with scaling
which causes vertical electric field to put stress on
oxide layer.
After prolong use, such thin oxide layer under electric
field stress, degrades the oxide insulation which can
permanently damage the device.
This is known as Time-dependent dielectric
breakdown.
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For theory
Visit:
someshkrmalhotra.wordpress.com

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