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STM 32 G

The STM32G0C1xC/xE is a 32-bit microcontroller based on the Arm Cortex-M0+ core, featuring up to 512KB Flash and 144KB RAM, along with various communication interfaces and low-power modes. It supports a wide operating temperature range and includes advanced features such as AES encryption, USB 2.0, and multiple timers. The device is available in several package options and is designed for a variety of applications requiring efficient processing and connectivity.

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0% found this document useful (0 votes)
17 views163 pages

STM 32 G

The STM32G0C1xC/xE is a 32-bit microcontroller based on the Arm Cortex-M0+ core, featuring up to 512KB Flash and 144KB RAM, along with various communication interfaces and low-power modes. It supports a wide operating temperature range and includes advanced features such as AES encryption, USB 2.0, and multiple timers. The device is available in several package options and is designed for a variety of applications requiring efficient processing and connectivity.

Uploaded by

Atul Pandey
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 163

STM32G0C1xC/xE

Arm® Cortex®-M0+ 32-bit MCU, up to 512KB Flash, 144KB RAM,


6x USART, timers, ADC, DAC, comm. I/Fs, AES, RNG, 1.7-3.6 V
Datasheet - production data

Features
• Includes ST state-of-the-art patented
technology
LQFP32 UFQFPN32
• Core: Arm® 32-bit Cortex®-M0+ CPU, (7 × 7 mm) (5 × 5 mm) UFBGA64
(5 × 5 mm)
WLCSP52
(3.09 × 3.15 mm)
frequency up to 64 MHz LQFP48 UFQFPN48
(7 × 7 mm) (7 × 7 mm) UFBGA100
• -40°C to 85°C/105°C/125°C operating LQFP64 (7 × 7 mm)
temperature (10 × 10 mm)
LQFP80
• Memories (12 × 12 mm)
LQFP100
– Up to 512 Kbytes of flash memory with (14 × 14 mm)
protection and securable area, two banks,
read-while-write support • Communication interfaces
– 144 Kbytes of SRAM (128 Kbytes with HW – Three I2C-bus interfaces supporting Fast-
parity check) mode Plus (1 Mbit/s) with extra current
sink, two supporting SMBus/PMBus and
• CRC calculation unit wakeup from Stop mode
• Reset and power management – Six USARTs with master/slave
– Voltage range: 1.7 V to 3.6 V synchronous SPI; three supporting
– Separate I/O supply pin (1.65 V to 3.6 V) ISO7816 interface, LIN, IrDA capability,
– Power-on/Power-down reset (POR/PDR) auto baud rate detection and wakeup
– Programmable Brownout reset (BOR) feature
– Programmable voltage detector (PVD) – Two low-power UARTs
– Low-power modes: – Three SPIs (32 Mbit/s) with 4- to 16-bit
Sleep, Stop, Standby, Shutdown programmable bitframe, two multiplexed
– VBAT supply for RTC and backup registers with I2S interface; six extra SPIs through
USARTs
• Clock management – HDMI CEC interface, wakeup on header
– 4 to 48 MHz crystal oscillator
– 32 kHz crystal oscillator with calibration • USB 2.0 FS device (crystal-less) and host
– Internal 16 MHz RC with PLL option (±1 %) controller
– Internal 48 MHz RC oscillator • USB Type-C™ Power Delivery controller
– Internal 32 kHz RC oscillator (±5 %) • Two FDCAN controllers
• Up to 94 fast I/Os • True random-number generator (RNG)
– All mappable on external interrupt vectors • AES encryption with 128/256-bit key
– Multiple 5 V-tolerant I/Os
• Development support: serial wire debug (SWD)
• 12-channel DMA controller with flexible • 96-bit unique ID
mapping
• All packages ECOPACK 2 compliant
• 12-bit, 0.4 µs ADC (up to 16 ext. channels)
– Up to 16-bit with hardware oversampling Table 1. Device summary
– Conversion range: 0 to 3.6V
Reference Part number
• Two 12-bit DACs, low-power sample-and-hold
• Three fast low-power analog comparators, with STM32G0C1CC, STM32G0C1KC,
programmable input and output, rail-to-rail STM32G0C1xC STM32G0C1MC, STM32G0C1RC,
• 15 timers (two 128 MHz capable): 16-bit for STM32G0C1VC
advanced motor control, one 32-bit and six 16- STM32G0C1CE, STM32G0C1KE,
bit general-purpose, two basic 16-bit, two low- STM32G0C1xE STM32G0C1ME, STM32G0C1NE,
power 16-bit, two watchdogs, SysTick timer STM32G0C1RE, STM32G0C1VE
• Calendar RTC with alarm and periodic wakeup
from Stop/Standby/Shutdown

November 2024 DS13564 Rev 5 1/163


This is information on a product in full production. www.st.com
Contents STM32G0C1xC/xE

Contents

1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

3 Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.1 Arm® Cortex®-M0+ core with MPU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.2 Memory protection unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.3 Embedded flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.3.1 Securable area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.4 Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.5 Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.6 Cyclic redundancy check calculation unit (CRC) . . . . . . . . . . . . . . . . . . . 16
3.7 Power supply management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.7.1 Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.7.2 Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.7.3 Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.7.4 Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.7.5 Reset mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.7.6 VBAT operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.8 Interconnect of peripherals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.9 Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.10 General-purpose inputs/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.11 Direct memory access controller (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.12 DMA request multiplexer (DMAMUX) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.13 Interrupts and events . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.13.1 Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . 24
3.13.2 Extended interrupt/event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . 24
3.14 Analog-to-digital converter (ADC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.14.1 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.14.2 Internal voltage reference (VREFINT) . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.14.3 VBAT battery voltage monitoring . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.15 Digital-to-analog converter (DAC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.16 Voltage reference buffer (VREFBUF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

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3.17 Comparators (COMP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27


3.18 True random-number generator (RNG) . . . . . . . . . . . . . . . . . . . . . . . . . . 27
3.19 Advanced-encryption-standard (AES) hardware accelerator . . . . . . . . . . 28
3.20 Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.20.1 Advanced-control timer (TIM1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
3.20.2 General-purpose timers (TIM2, 3, 4, 14, 15, 16, 17) . . . . . . . . . . . . . . . 30
3.20.3 Basic timers (TIM6 and TIM7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3.20.4 Low-power timers (LPTIM1 and LPTIM2) . . . . . . . . . . . . . . . . . . . . . . . 30
3.20.5 Independent watchdog (IWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.20.6 System window watchdog (WWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.20.7 SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.21 Real-time clock (RTC), tamper (TAMP) and backup registers . . . . . . . . . 31
3.22 Inter-integrated circuit interface (I2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.23 Universal synchronous/asynchronous receiver transmitter (USART) . . . 33
3.24 Low-power universal asynchronous receiver transmitter (LPUART) . . . . 34
3.25 Serial peripheral interface (SPI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
3.26 Universal serial bus full-speed host/device interface (USB) . . . . . . . . . . . 35
3.27 USB Type-C Power Delivery controller . . . . . . . . . . . . . . . . . . . . . . . . . . 36
3.28 Controller area network (FDCAN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
3.29 Development support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
3.29.1 Serial wire debug port (SW-DP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

4 Pinouts, pin description and alternate functions . . . . . . . . . . . . . . . . . 37

5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
5.1 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
5.1.1 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
5.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
5.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
5.1.4 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
5.1.5 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
5.1.6 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
5.1.7 Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
5.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
5.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68

DS13564 Rev 5 3/163


5
Contents STM32G0C1xC/xE

5.3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68


5.3.2 Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . 69
5.3.3 Embedded reset and power control block characteristics . . . . . . . . . . . 69
5.3.4 Embedded voltage reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
5.3.5 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
5.3.6 Wakeup time from low-power modes and voltage scaling
transition times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
5.3.7 External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
5.3.8 Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
5.3.9 PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
5.3.10 Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
5.3.11 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
5.3.12 Electrical sensitivity characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
5.3.13 I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
5.3.14 I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
5.3.15 NRST input characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
5.3.16 Extended interrupt and event controller input (EXTI) characteristics . . 100
5.3.17 Analog switch booster . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
5.3.18 Analog-to-digital converter characteristics . . . . . . . . . . . . . . . . . . . . . . 101
5.3.19 Digital-to-analog converter characteristics . . . . . . . . . . . . . . . . . . . . . . 108
5.3.20 Voltage reference buffer characteristics . . . . . . . . . . . . . . . . . . . . . . . 112
5.3.21 Comparator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
5.3.22 Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
5.3.23 VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
5.3.24 Timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
5.3.25 Characteristics of communication interfaces . . . . . . . . . . . . . . . . . . . . 116

6 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125


6.1 Device marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
6.2 LQFP32 package information (5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
6.3 UFQFPN32 package information (A0B8) . . . . . . . . . . . . . . . . . . . . . . . . 130
6.4 LQFP48 package information (5B) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
6.5 UFQFPN48 package information (A0B9) . . . . . . . . . . . . . . . . . . . . . . . . 136
6.6 WLCSP52 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
6.7 Device marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140
6.8 LQFP64 package information (5W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141

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STM32G0C1xC/xE Contents

6.9 UFBGA64 package information (A019) . . . . . . . . . . . . . . . . . . . . . . . . . 144


6.10 LQFP80 package information (9X) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147
6.11 LQFP100 package information (1L) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
6.12 UFBGA100 package information (A0C2) . . . . . . . . . . . . . . . . . . . . . . . . 153
6.13 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156
6.13.1 Reference document . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
6.13.2 Selecting the product temperature range . . . . . . . . . . . . . . . . . . . . . . 157

7 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159

8 Important security notice . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160

9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161

DS13564 Rev 5 5/163


5
List of tables STM32G0C1xC/xE

List of tables

Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1


Table 2. Features and peripheral counts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 3. Access status versus readout protection level and execution modes. . . . . . . . . . . . . . . . . 15
Table 4. Interconnect of peripherals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Table 5. Temperature sensor calibration values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Table 6. Internal voltage reference calibration values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Table 7. Timer feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 8. I2C implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 9. USART implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Table 10. SPI/I2S implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Table 11. Terms and symbols used in Table 12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Table 12. Pin assignment and description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Table 13. Port A alternate function mapping (AF0 to AF7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Table 14. Port A alternate function mapping (AF8 to AF15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Table 15. Port B alternate function mapping (AF0 to AF7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Table 16. Port B alternate function mapping (AF8 to AF15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Table 17. Port C alternate function mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Table 18. Port D alternate function mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Table 19. Port E alternate function mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
Table 20. Port F alternate function mapping. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Table 21. Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Table 22. Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Table 23. Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
Table 24. General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
Table 25. Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Table 26. Embedded reset and power control block characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 69
Table 27. Embedded internal voltage reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Table 28. Current consumption in Run and Low-power run modes
at different die temperatures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
Table 29. Typical current consumption in Run and Low-power run modes,
depending on code executed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Table 30. Current consumption in Sleep and Low-power sleep modes . . . . . . . . . . . . . . . . . . . . . . . 75
Table 31. Current consumption in Stop 0 mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
Table 32. Current consumption in Stop 1 mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Table 33. Current consumption in Standby mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Table 34. Current consumption in Shutdown mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Table 35. Current consumption in VBAT mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Table 36. Current consumption of peripherals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Table 37. Low-power mode wakeup times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Table 38. Regulator mode transition times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
Table 39. Wakeup time using LPUART . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
Table 40. High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
Table 41. Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Table 42. HSE oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
Table 43. LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
Table 44. HSI16 oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Table 45. HSI48 oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
Table 46. LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89

6/163 DS13564 Rev 5


STM32G0C1xC/xE List of tables

Table 47. PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89


Table 48. Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Table 49. Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Table 50. EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
Table 51. EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
Table 52. ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
Table 53. Electrical sensitivity. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
Table 54. I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
Table 55. I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
Table 56. Input characteristics of FT_e I/Os . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
Table 57. Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Table 58. Non-FT_c I/O output timing characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
Table 59. FT_c I/O output timing characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Table 60. NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Table 61. EXTI input characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
Table 62. Analog switch booster characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Table 63. ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Table 64. Maximum ADC RAIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Table 65. ADC accuracy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
Table 66. DAC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
Table 67. DAC accuracy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
Table 68. VREFBUF characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
Table 69. COMP characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
Table 70. TS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
Table 71. VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Table 72. VBAT charging characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Table 73. TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Table 74. IWDG min/max timeout period at 32 kHz LSI clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Table 75. Minimum I2CCLK frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Table 76. I2C analog filter characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Table 77. SPI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Table 78. I2S characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
Table 79. USART characteristics in SPI mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Table 80. USB FS electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Table 81. UCPD operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
Table 82. LQFP32 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Table 83. UFQFPN32 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Table 84. Tolerance of form and position . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Table 85. Exposed pad variation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
Table 86. LQFP48 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
Table 87. UFQFPN48 – Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
Table 88. WLCSP52 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
Table 89. WLCSP52 - Recommended PCB design rules. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
Table 90. LQFP64 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142
Table 91. UFBGA64 – Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
Table 92. UFBGA64 - Example of PCB design rules (0.5 mm pitch BGA) . . . . . . . . . . . . . . . . . . . . 146
Table 93. LQFP80 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
Table 94. LQFP100 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151
Table 95. UFBGA100 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154
Table 96. UFBGA100 - Example of PCB design rules (0.5 mm pitch BGA) . . . . . . . . . . . . . . . . . . . 155
Table 97. Package thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156
Table 98. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161

DS13564 Rev 5 7/163


7
List of figures STM32G0C1xC/xE

List of figures

Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13


Figure 2. Power supply overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 3. STM32G0C1KxT LQFP32 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 4. STM32G0C1KxU UFQFPN32 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 5. STM32G0C1CxT LQFP48 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 6. STM32G0C1CxU UFQFPN48 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 7. STM32G0C1NxY WLCSP52 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Figure 8. STM32G0C1RxT LQFP64 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 9. STM32G0C1RxI UFBGA64 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 10. STM32G0C1MxT LQFP80 pinout. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Figure 11. STM32G0C1VxT LQFP100 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Figure 12. STM32G0C1VxI UFBGA100 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 13. Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Figure 14. Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Figure 15. Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Figure 16. Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Figure 17. VREFINT vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Figure 18. High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Figure 19. Low-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
Figure 20. Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Figure 21. Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
Figure 22. HSI16 frequency vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Figure 23. HSI48 frequency versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
Figure 24. I/O input characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Figure 25. Current injection into FT_e input with diode active . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
Figure 26. I/O AC characteristics definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Figure 27. Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
Figure 28. ADC accuracy characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Figure 29. ADC typical connection diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Figure 30. 12-bit buffered / non-buffered DAC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
Figure 31. SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
Figure 32. SPI timing diagram - slave mode and CPHA = 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
Figure 33. SPI timing diagram - master mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
Figure 34. I2S slave timing diagram (Philips protocol) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Figure 35. I2S master timing diagram (Philips protocol). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Figure 36. USART timing diagram in SPI master mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
Figure 37. USART timing diagram in SPI slave mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Figure 38. USB timings – definition of data signal rise and fall time . . . . . . . . . . . . . . . . . . . . . . . . . 124
Figure 39. LQFP32 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Figure 40. LQFP32 – Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
Figure 41. UFQFPN32 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
Figure 42. UFQFPN32 - Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
Figure 43. LQFP48 - Outline(15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
Figure 44. LQFP48 - Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
Figure 45. UFQFPN48 – Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
Figure 46. UFQFPN48 – Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
Figure 47. WLCSP52 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
Figure 48. WLCSP52 - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139

8/163 DS13564 Rev 5


STM32G0C1xC/xE List of figures

Figure 49. WLCSP52 package marking example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140


Figure 50. LQFP64 - Outline(15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141
Figure 51. LQFP64 - Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143
Figure 52. UFBGA64 – Outline(13) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144
Figure 53. UFBGA64 – Footprint example. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
Figure 54. LQFP80 - Outline(15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147
Figure 55. LQFP80 - Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
Figure 56. LQFP100 - Outline(15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
Figure 57. LQFP100 - Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Figure 58. UFBGA100 - Outline(13) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
Figure 59. UFBGA100 - Footprint example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155

DS13564 Rev 5 9/163


9
Introduction STM32G0C1xC/xE

1 Introduction

This document provides information on STM32G0C1xC/xE microcontrollers, such as


description, functional overview, pin assignment and definition, electrical characteristics,
packaging, and ordering codes.
Information on memory mapping and control registers is object of reference manual
RM0444.
For information on the device errata with respect to the datasheet and reference manual,
refer to the STM32G0C1xC/xE errata sheet ES0549.
Information on Arm®(a) Cortex®-M0+ core is available from the www.arm.com website.

a. Arm is a registered trademark of Arm Limited (or its subsidiaries) in the US and/or elsewhere.

10/163 DS13564 Rev 5


STM32G0C1xC/xE Description

2 Description

The STM32G0C1xC/xE mainstream microcontrollers are based on high-performance


Arm® Cortex®-M0+ 32-bit RISC core operating at up to 64 MHz frequency. Offering a high
level of integration, they are suitable for a wide range of applications in consumer, industrial
and appliance domains and ready for the Internet of Things (IoT) solutions.
The devices incorporate a memory protection unit (MPU), high-speed embedded memories
(144 Kbytes of SRAM and up to 512 Kbytes of flash program memory with read protection,
write protection, proprietary code protection, and securable area), DMA, an extensive range
of system functions, enhanced I/Os, and peripherals. The devices offer standard
communication interfaces (three I2Cs, three SPIs / two I2S, one HDMI CEC, one full-speed
USB, two FD CANs, and six USARTs), one 12-bit ADC (2.5 MSps) with up to 19 channels,
one 12-bit DAC with two channels, three fast comparators, an internal voltage reference
buffer, a low-power RTC, an advanced control PWM timer running at up to double the CPU
frequency, six general-purpose 16-bit timers with one running at up to double the CPU
frequency, a 32-bit general-purpose timer, two basic timers, two low-power 16-bit timers,
two watchdog timers, and a SysTick timer. The devices provide a fully integrated USB Type-
C Power Delivery controller.
The devices embed AES hardware accelerator and true random-number generator (RNG).
The devices operate within ambient temperatures from -40 to 125°C and with supply
voltages from 1.7 V to 3.6 V. Optimized dynamic consumption combined with a
comprehensive set of power-saving modes, low-power timers and low-power UART, allows
the design of low-power applications.
VBAT direct battery input allows keeping RTC and backup registers powered.
The devices come in packages with 32 to 100 pins. Some packages with low pin count are
available in two pinouts (standard and alternative indicated by “N” suffix). Products marked
by N suffix are offering VDDIO2 supply and additional UCPD port versus the standard pinout,
therefore those are better choice for UCPD/USB applications.

DS13564 Rev 5 11/163


36
Description STM32G0C1xC/xE

Table 2. Features and peripheral counts


STM32G0C1_
Peripheral
_KC/ _KCxxN/ _CC/ _CCxxN/ _RC/ _RCxxN/ _MC/ _VC/
_NE
_KE _KExxN _CE _CExxN _RE _RExxN _ME _VE

Flash memory (Kbyte) 256/512 256/512 256/512 256/512 512 256/512 256/512 256/512 256/512

SRAM (Kbyte) 128 (parity-protected) or 144 (not parity-protected)

Advanced control 1 (16-bit) high frequency

General-purpose 6 (16-bit) + 1 (16-bit) high frequency + 1 (32-bit)

Basic 2 (16-bit)
Timers

Low-power 2 (16-bit)

SysTick 1

Watchdog 2

SPI [I2S](1) 3 [2] + 6 extra through USARTs


2C
I 3
Comm. interfaces

USART 6

LPUART 2

USB 1(2) 1
(3)
UCPD 1 2

FDCAN 2

CEC 1

RTC Yes

Tamper pins 3

VDDIO2 pin / VSS pin No/No Yes/No No/No Yes/Yes Yes/Yes No/No Yes/Yes Yes/Yes Yes/Yes

RNG / AES Yes / Yes

GPIOs 30 29 44 42 46 60 58 74 94

Wakeup pins 4 3 4 5 7 8

ADC channels (ext. + int.) 11 + 2 10 + 2 14 + 3 16 + 3

DAC channels 2

VREFBUF No Yes

Analog comparators 3

Max. CPU frequency 64 MHz

Operating voltage 1.7 to 3.6 V

Ambient: -40 to 85 °C / -40 to 105 °C / -40 to 125 °C


Operating temperature(4)
Junction: -40 to 105 °C / -40 to 125 °C / -40 to 130 °C

Number of pins 32 48 52 64 80 100

1. The numbers in brackets denote the count of SPI interfaces configurable as I 2S interface.
2. The HSE crystal oscillator is not available on 32-pin packages. The precise clock for the USB peripheral must be provided by some
other means.
3. One port with only one CC line available (supporting limited number of use cases).
4. Depends on order code. Refer to Section 7: Ordering information for details.

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STM32G0C1xC/xE Description

Figure 1. Block diagram

POWER
DMAMUX
Voltage
SWCLK SWD VCORE regulator
SWDIO DMA
VDDIO1
VDDA VDD/VDDA
CPU Flash memory VSS/VSSA
I/F VDD
up to 512 KB

Bus matrix
CORTEX-M0+ VDDIO2
fmax = 64 MHz VDDIO2
SUPPLY
SRAM SUPERVISION
144 KB POR
Parity POR/BOR
Reset
NVIC IOPORT HSI48 Int NRST
RC 48 MHz T sensor
HSI16
RC 16 MHz
PLLPCLK PVD
PLLQCLK
GPIOs PLL
PLLRCLK
PAx Port A LSI
RC 32 kHz XTAL OSC OSC_IN
PBx Port B RNG 4-48 MHz OSC_OUT
decoder

PCx Port C HSE IWDG


AES
PDx Port D I/F
RCC LSE VDD VBAT
PEx Port E Reset & clock control Low-voltage
CRC detector
PFx Port F LSE
AHB

XTAL32 kHz OSC32_IN


System and OSC32_OUT
peripheral
clocks RTC, TAMP RTC_OUT
EXTI Backup regs RTC_REFIN
RTC_TS
from peripherals I/F
AHB-to-APB TAMP_IN

VREF+ VREFBUF
4 channels
COMP1 TIM1
BKIN, BKIN2, ETR
IN+, IN-, COMP2 4 channels
OUT TIM2 (32-bit)
ETR
COMP3
SYSCFG
4 channels
TIM3 & 4
DAC_OUT1 ETR
DAC I/F
DAC_OUT2 TIM14 1 channel
TIM6
TIM15 2 channels
16x IN ADC I/F BKIN
TIM7
TIM16 & 17 1 channel
TIMER 16/17 BKIN
MOSI/SD
MISO/MCK PWRCTRL
SPI/I2S 1&2
SPI1/I2S LPTIM1 &1/2
LPTIMER 2 ETR, IN, OUT
SCK/CK
NSS/WS
APB

WWDG IR_OUT
MOSI, MISO IRTIM
SPI3
APB

SCK, NSS
DBGMCU
USART1 to 6 RX, TX
CC, DBCC USART3/4 CTS, RTS
UCPD1
UCPD&2
FRSTX
RX, TX,
LPUART1
LPUART& && 22 CTS, RTS
CEC HDMI-CEC

NOE, DM, SCL, SDA


USB FS I2C1 &2
DP I2C2 SMBA, SMBUS

RX, TX FDCAN1
FDCAN1&&22 I2C3 SCL, SDA

Power domain of analog blocks : VBAT VDD VDDA VDDIO1/VDDIO2


MSv63192V2

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36
Functional overview STM32G0C1xC/xE

3 Functional overview

3.1 Arm® Cortex®-M0+ core with MPU


The Cortex-M0+ is an entry-level 32-bit Arm Cortex processor designed for a broad range of
embedded applications. It offers significant benefits to developers, including:
• a simple architecture, easy to learn and program
• ultra-low power, energy-efficient operation
• excellent code density
• deterministic, high-performance interrupt handling
• upward compatibility with Cortex-M processor family
• platform security robustness, with integrated Memory Protection Unit (MPU).
The Cortex-M0+ processor is built on a highly area- and power-optimized 32-bit core, with a
2-stage pipeline Von Neumann architecture. The processor delivers exceptional energy
efficiency through a small but powerful instruction set and extensively optimized design,
providing high-end processing hardware including a single-cycle multiplier.
The Cortex-M0+ processor provides the exceptional performance expected of a modern
32-bit architecture, with a higher code density than other 8-bit and 16-bit microcontrollers.
Owing to embedded Arm core, the STM32G0C1xC/xE devices are compatible with Arm
tools and software.
The Cortex-M0+ is tightly coupled with a nested vectored interrupt controller (NVIC)
described in Section 3.13.1.

3.2 Memory protection unit


The memory protection unit (MPU) is used to manage the CPU accesses to memory to
prevent one task to accidentally corrupt the memory or resources used by any other active
task.
The MPU is especially helpful for applications where some critical or certified code has to be
protected against the misbehavior of other tasks. It is usually managed by an RTOS (real-
time operating system). If a program accesses a memory location that is prohibited by the
MPU, the RTOS can detect it and take action. In an RTOS environment, the kernel can
dynamically update the MPU area setting, based on the process to be executed.
The MPU is optional and can be bypassed for applications that do not need it.

3.3 Embedded flash memory


STM32G0C1xC/xE devices feature up to 512 Kbytes of embedded flash memory available
for storing code and data.

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Flexible protections can be configured thanks to option bytes:


• Readout protection (RDP) to protect the whole memory. Three levels are available:
– Level 0: no readout protection
– Level 1: memory readout protection: the flash memory cannot be read from or
written to if either debug features are connected, boot in RAM or bootloader is
selected
– Level 2: chip readout protection: debug features (Cortex-M0+ serial wire), boot in
RAM and bootloader selection are disabled. This selection is irreversible.

Table 3. Access status versus readout protection level and execution modes

User execution Debug, boot from RAM or boot


Protection from system memory (loader)
Area
level
Read Write Erase Read Write Erase

User 1 Yes Yes Yes No No No


memory 2 Yes Yes Yes N/A N/A N/A
System 1 Yes No No Yes No No
memory 2 Yes No No N/A N/A N/A
Option 1 Yes Yes Yes Yes Yes Yes
bytes 2 Yes No No N/A N/A N/A
(1) N/A(1)
Backup 1 Yes Yes N/A No No
registers 2 Yes Yes N/A N/A N/A N/A
1 Yes Yes N/A Yes No N/A
OTP
2 Yes Yes N/A N/A N/A N/A
1. Erased upon RDP change from Level 1 to Level 0.

• Write protection (WRP): the protected area is protected against erasing and
programming. Two areas per bank can be selected, with 2-Kbyte granularity.
• Proprietary code readout protection (PCROP): a part of the flash memory can be
protected against read and write from third parties. The protected area is execute-only:
it can only be reached by the STM32 CPU as instruction code, while all other accesses
(DMA, debug and CPU data read, write and erase) are strictly prohibited. An additional
option bit (PCROP_RDP) determines whether the PCROP area is erased or not when
the RDP protection is changed from Level 1 to Level 0.
The whole non-volatile memory embeds the error correction code (ECC) feature supporting:
• single error detection and correction
• double error detection
• readout of the ECC fail address from the ECC register

3.3.1 Securable area


A part of the flash memory can be hidden from the application once the code it contains is
executed. As soon as the write-once SEC_PROT bit is set, the securable memory cannot be
accessed until the system resets. The securable area generally contains the secure boot
code to execute only once at boot. This helps to isolate secret code from untrusted
application code.

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Functional overview STM32G0C1xC/xE

3.4 Embedded SRAM


STM32G0C1xC/xE devices have 128 Kbytes of embedded SRAM with parity. Hardware
parity check allows memory data errors to be detected, which contributes to increasing
functional safety of applications.
When the parity protection is not required because the application is not safety-critical, the
parity memory bits can be used as additional SRAM, to increase its total size to 144 Kbytes.
The memory can be read/write-accessed at CPU clock speed, with 0 wait states.

3.5 Boot modes


At startup, the boot pin and boot selector option bit are used to select one of the three boot
options:
• boot from User flash memory
• boot from System memory
• boot from embedded SRAM
The boot pin is shared with a standard GPIO and can be enabled through the boot selector
option bit. If the BOOT0 pin selects the boot from the main flash memory of which the first
location is empty, the flash memory empty checker forces the boot from the system memory.
The system memory contains an embedded boot loader. It manages the flash memory
reprogramming through one of the following interfaces:
• USART on pins PA9/PA10, PC10/PC11, or PA2/PA3
• I2C-bus on pins PB6/PB7 or PB10/PB11
• SPI on pins PA4/PA5/PA6/PA7 or PB12/PB13/PB14/PB15
• USB on pins PA11/PA12
• FDCAN on pins PD0/PD1
When boot loader is executed, it configures some of the GPIOs out of their by-default high-Z
state. Refer to AN2606 for more details on the boot loader and on the GPIO configuration
when booting from the system memory.

3.6 Cyclic redundancy check calculation unit (CRC)


The CRC (cyclic redundancy check) calculation unit is used to get a CRC code using a
configurable generator polynomial value and size.
Among other applications, CRC-based techniques are used to verify data transmission or
storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of
verifying the flash memory integrity. The CRC calculation unit helps compute a signature of
the software during runtime, to be compared with a reference signature generated at link
time and stored at a given memory location.

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3.7 Power supply management

3.7.1 Power supply schemes


The STM32G0C1xC/xE devices require a 1.7 V to 3.6 V operating supply voltage (VDD).
Several different power supplies are provided to specific peripherals:
• VDD = 1.7 (1.6) to 3.6 V
VDD is the external power supply for the internal regulator and the system analog such
as reset, power management and internal clocks. It is provided externally through
VDD/VDDA pin.
The minimum voltage of 1.7 V corresponds to power-on reset release threshold
VPOR(max). Once this threshold is crossed and power-on reset is released, the
functionality is guaranteed down to power-down reset threshold VPDR(min).
• VDDA = 1.62 V (ADC and COMP) / 1.8 V (DAC) / 2.4 V (VREFBUF) to 3.6 V
VDDA is the analog power supply for the A/D converter, D/A converter, voltage
reference buffer and comparators. VDDA voltage level is identical to VDD voltage as it is
provided externally through VDD/VDDA pin.
• VDDIO1 = VDD
VDDIO1 is the power supply for the I/Os. VDDIO1 voltage level is identical to VDD voltage
as it is provided externally through VDD/VDDA pin.
• VDDIO2 = 1.65 to 3.6 V
VDDIO2 is the power supply from VDDIO2 pin for selected I/Os and VDDUSB. On
packages without VDDIO2 pin, VDDUSB and VDDIO2 are internally connected with VDD.
Although VDDIO2 is independent of VDD or VDDA, it must not be applied without valid
VDD.
• VBAT = 1.55 V to 3.6 V. VBAT is the power supply (through a power switch) for RTC,
TAMP, low-speed external 32.768 kHz oscillator and backup registers when VDD is not
present. VBAT is provided externally through VBAT pin. When this pin is not available
on the package, VBAT bonding pad is internally bonded to the VDD/VDDA pin.
• VREF+ is the analog peripheral input reference voltage, or the output of the internal
voltage reference buffer (when enabled). When VDDA < 2 V, VREF+ must be equal to
VDDA. When VDDA ≥ 2 V, VREF+ must be between 2 V and VDDA. It can be grounded
when the analog peripherals using VREF+ are not active.
The internal voltage reference buffer supports two output voltages, which is configured
with VRS bit of the VREFBUF_CSR register:
– VREF+ around 2.048 V (requiring VDDA equal to or higher than 2.4 V)
– VREF+ around 2.5 V (requiring VDDA equal to or higher than 2.8 V)
VREF+ is delivered through VREF+ pin. On packages without VREF+ pin, VREF+ is
internally connected with VDD, and the internal voltage reference buffer must be kept
disabled (refer to datasheets for package pinout description).
• VCORE is an internal supply for digital peripherals, SRAM and flash memory. It is
produced by an embedded linear voltage regulator. On top of VCORE, the flash memory
is also powered from VDD.

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36
Functional overview STM32G0C1xC/xE

Figure 2. Power supply overview


VDDA domain
VREF+
VREF+ A/D converter
VDDA Comparators
D/A converter
VSSA Voltage reference buffer

VDDIO1 VDDIO1 domain


I/O ring
VDDIO2 VDDIO2 domain
VDDIO2 I/O ring
USB
VSS VDD domain

Reset block
VDD Temp. sensor VCORE domain
VDD/VDDA
PLL, HSI
Core
VSS Standby circuitry
VSS/VSSA (Wakeup, IWDG) SRAM

Voltage VCORE Digital


regulator peripherals

Low-voltage Flash memory


detector

RTC domain
BKP registers
VBAT
LSE crystal 32.768 kHz osc
RCC BDCR register
RTC and TAMP
MSv63104V3

3.7.2 Power supply supervisor


The device has an integrated power-on/power-down (POR/PDR) reset active in all power
modes except Shutdown and ensuring proper operation upon power-on and power-down. It
maintains the device in reset when the supply voltage is below VPOR/PDR threshold, without
the need for an external reset circuit. Brownout reset (BOR) function allows extra flexibility. It
can be enabled and configured through option bytes, by selecting one of four thresholds for
rising VDD and other four for falling VDD.
The device also features an embedded programmable voltage detector (PVD) that monitors
the VDD power supply and compares it to VPVD threshold. It allows generating an interrupt
when VDD level crosses the VPVD threshold, selectively while falling, while rising, or while
falling and rising. The interrupt service routine can then generate a warning message and/or
put the MCU into a safe state. The PVD is enabled by software.

3.7.3 Voltage regulator


Two embedded linear voltage regulators, main regulator (MR) and low-power regulator
(LPR), supply most of digital circuitry in the device.
The MR is used in Run and Sleep modes. The LPR is used in Low-power run, Low-power
sleep and Stop modes.
In Standby and Shutdown modes, both regulators are powered down and their outputs set in
high-impedance state, such as to bring their current consumption close to zero. However,
SRAM data retention is possible in Standby mode, in which case the LPR remains active
and it only supplies the SRAM.

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STM32G0C1xC/xE Functional overview

3.7.4 Low-power modes


By default, the microcontroller is in Run mode after system or power reset. It is up to the
user to select one of the low-power modes described below.

Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can wake
up the CPU when an interrupt/event occurs.

Low-power run mode


This mode is achieved with VCORE supplied by the low-power regulator to minimize the
regulator's operating current. The code can be executed from SRAM or from flash memory,
and the CPU frequency is limited to 2 MHz. The peripherals with independent clock can be
clocked by HSI16.

Low-power sleep mode


This mode is entered from the low-power run mode. Only the CPU clock is stopped. When
wakeup is triggered by an event or an interrupt, the system reverts to the Low-power run
mode.

Stop 0 and Stop 1 modes


In Stop 0 and Stop 1 modes, the device achieves the lowest power consumption while
retaining the SRAM and register contents. All clocks in the VCORE domain are stopped. The
PLL, as well as the HSI16 RC oscillator and the HSE crystal oscillator are disabled. The
LSE or LSI keep running. The RTC can remain active (Stop mode with RTC, Stop mode
without RTC).
Some peripherals with wakeup capability can enable the HSI16 RC during Stop mode, so as
to get clock for processing the wakeup event. The main regulator remains active in Stop 0
mode while it is turned off in Stop 1 mode.

Standby mode
The Standby mode is used to achieve the lowest power consumption, with POR/PDR
always active in this mode. The main regulator is switched off to power down VCORE
domain. The low-power regulator is either switched off or kept active. In the latter case, it
only supplies SRAM to ensure data retention. The PLL, as well as the HSI16 RC oscillator
and the HSE crystal oscillator are also powered down. The RTC can remain active (Standby
mode with RTC, Standby mode without RTC).
For each I/O, the software can determine whether a pull-up, a pull-down or no resistor shall
be applied to that I/O during Standby mode.
Upon entering Standby mode, register contents are lost except for registers in the RTC
domain and standby circuitry. The SRAM contents can be retained through register setting.
The device exits Standby mode upon external reset event (NRST pin), IWDG reset event,
wakeup event (WKUP pin, configurable rising or falling edge), RTC event (alarm, periodic
wakeup, timestamp), TAMP event, or when a failure is detected on LSE (CSS on LSE).

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Functional overview STM32G0C1xC/xE

Shutdown mode
The Shutdown mode allows to achieve the lowest power consumption. The internal
regulator is switched off to power down the VCORE domain. The PLL, as well as the HSI16
and LSI RC-oscillators and HSE crystal oscillator are also powered down. The RTC can
remain active (Shutdown mode with RTC, Shutdown mode without RTC).
The BOR is not available in Shutdown mode. No power voltage monitoring is possible in this
mode. Therefore, switching to RTC domain is not supported.
SRAM and register contents are lost except for registers in the RTC domain.
The device exits Shutdown mode upon external reset event (NRST pin), wakeup event
(WKUP pin, configurable rising or falling edge), RTC event (alarm, periodic wakeup,
timestamp), or TAMP event.

3.7.5 Reset mode


During and upon exiting reset, the schmitt triggers of I/Os are disabled so as to reduce
power consumption. In addition, when the reset source is internal, the built-in pull-up
resistor on NRST pin is deactivated.

3.7.6 VBAT operation


The VBAT power domain, consuming very little energy, includes RTC, and LSE oscillator and
backup registers.
In VBAT mode, the RTC domain is supplied from VBAT pin. The power source can be, for
example, an external battery or an external supercapacitor. Two anti-tamper detection pins
are available.
The RTC domain can also be supplied from VDD.
By means of a built-in switch, an internal voltage supervisor allows automatic switching of
RTC domain powering between VDD and voltage from VBAT pin to ensure that the supply
voltage of the RTC domain (VBAT) remains within valid operating conditions. If both voltages
are valid, the RTC domain is supplied from VDD.
An internal circuit for charging the battery on VBAT pin can be activated if the VDD voltage is
within a valid range.
Note: External interrupts and RTC alarm/events cannot cause the microcontroller to exit the VBAT
mode, as in that mode the VDD is not within a valid range.

3.8 Interconnect of peripherals


Several peripherals have direct connections between them. This allows autonomous
communication between peripherals, saving CPU resources thus power supply
consumption. In addition, these hardware connections allow fast and predictable latency.
Depending on peripherals, these interconnections can operate in Run, Sleep and Stop
modes.

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STM32G0C1xC/xE Functional overview

Table 4. Interconnect of peripherals

Low-power sleep
Low-power run

Sleep
Interconnect

Stop
Run
Interconnect source Interconnect action
destination

TIMx Timer synchronization or chaining Y Y -


ADCx
Conversion triggers Y Y -
TIMx DACx
DMA Memory-to-memory transfer trigger Y Y -
COMPx Comparator output blanking Y Y -
Timer input channel, trigger, break
TIM1,2,3,4 Y Y -
from analog signals comparison
COMPx
Low-power timer triggered by analog
LPTIMERx Y Y Y
signals comparison
ADCx TIM1 Timer triggered by analog watchdog Y Y -
TIM16 Timer input channel from RTC events Y Y -
RTC Low-power timer triggered by RTC
LPTIMERx Y Y Y
alarms or tampers
All clock sources (internal and Clock source used as input channel for
TIM14,16,17 Y Y -
external) RC measurement and trimming
CSS
RAM (parity error)
Flash memory (ECC error) TIM1,15,16,17 Timer break Y Y -
COMPx
PVD
CPU (hard fault) TIM1,15,16,17 Timer break Y - -
TIMx External trigger Y Y -
LPTIMERx External trigger Y Y Y
GPIO
ADC
Conversion external trigger Y Y -
DACx

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Functional overview STM32G0C1xC/xE

3.9 Clocks and startup


The clock controller distributes the clocks coming from different oscillators to the core and
the peripherals. It also manages clock gating for low-power modes and ensures clock
robustness. It features:
• Clock prescaler: to get the best trade-off between speed and current consumption,
the clock frequency to the CPU and peripherals can be adjusted by a programmable
prescaler
• Safe clock switching: clock sources can be changed safely on the fly in run mode
through a configuration register.
• Clock management: to reduce power consumption, the clock controller can stop the
clock to the core, individual peripherals or memory.
• System clock source: three different sources can deliver SYSCLK system clock:
– 4-48 MHz high-speed oscillator with external crystal or ceramic resonator (HSE). It
can supply clock to system PLL. The HSE can also be configured in bypass mode
for an external clock.
– 16 MHz high-speed internal RC oscillator (HSI16), trimmable by software. It can
supply clock to system PLL.
– System PLL with maximum output frequency of 64 MHz. It can be fed with HSE or
HSI16 clocks.
• Auxiliary clock source: two ultra-low-power clock sources for the real-time clock
(RTC):
– 32.768 kHz low-speed oscillator with external crystal (LSE), supporting four drive
capability modes. The LSE can also be configured in bypass mode for using an
external clock.
– 32 kHz low-speed internal RC oscillator (LSI) with ±5% accuracy, also used to
clock an independent watchdog.
• USB clock source:
– HSI 48 MHz in association with CRS can provide a dedicated clock to USB FS
allowing the peripheral to operate as device without requiring an external
resonator
• Peripheral clock sources: several peripherals (RNG, I2S, USARTs, I2Cs, LPTIMs,
ADC, USB FS) have their own clock independent of the system clock.
• Clock security system (CSS): in the event of HSE clock failure, the system clock is
automatically switched to HSI16 and, if enabled, a software interrupt is generated. LSE
clock failure can also be detected and generate an interrupt. The CCS feature can be
enabled by software.
• Clock output:
– MCO (microcontroller clock output) provides one of the internal clocks for
external use by the application
– LSCO (low speed clock output) provides LSI or LSE in all low-power modes
(except in VBAT operation).
Several prescalers allow the application to configure AHB and APB domain clock
frequencies, 64 MHz at maximum.

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3.10 General-purpose inputs/outputs (GPIOs)


Each of the GPIO pins can be configured by software as output (push-pull or open-drain), as
input (with or without pull-up or pull-down) or as peripheral alternate function (AF). Most of
the GPIO pins are shared with special digital or analog functions.
Through a specific sequence, this special function configuration of I/Os can be locked, such
as to avoid spurious writing to I/O control registers.

3.11 Direct memory access controller (DMA)


The direct memory access (DMA) controller is a bus master and system peripheral with
single-AHB architecture.
With 12 channels, it performs data transfers between memory-mapped peripherals and/or
memories, to offload the CPU.
Each channel is dedicated to managing memory access requests from one or more
peripherals. The unit includes an arbiter for handling the priority between DMA requests.
Main features of the DMA controller:
• Single-AHB master
• Peripheral-to-memory, memory-to-peripheral, memory-to-memory and peripheral-to-
peripheral data transfers
• Access, as source and destination, to on-chip memory-mapped devices such as flash
memory, SRAM, and AHB and APB peripherals
• All DMA channels independently configurable:
– Each channel is associated either with a DMA request signal coming from a
peripheral, or with a software trigger in memory-to-memory transfers. This
configuration is done by software.
– Priority between the requests is programmable by software (four levels per
channel: very high, high, medium, low) and by hardware in case of equality (such
as request to channel 1 has priority over request to channel 2).
– Transfer size of source and destination are independent (byte, half-word, word),
emulating packing and unpacking. Source and destination addresses must be
aligned on the data size.
– Support of transfers from/to peripherals to/from memory with circular buffer
management
– Programmable number of data to be transferred: 0 to 216 - 1
• Generation of an interrupt request per channel. Each interrupt request originates from
any of the three DMA events: transfer complete, half transfer, or transfer error.

3.12 DMA request multiplexer (DMAMUX)


The DMAMUX request multiplexer enables routing a DMA request line between the
peripherals and the DMA controller. Each channel selects a unique DMA request line,
unconditionally or synchronously with events from its DMAMUX synchronization inputs.
DMAMUX may also be used as a DMA request generator from programmable events on its
input trigger signals.

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Functional overview STM32G0C1xC/xE

3.13 Interrupts and events


The device flexibly manages events causing interrupts of linear program execution, called
exceptions. The Cortex-M0+ processor core, a nested vectored interrupt controller (NVIC)
and an extended interrupt/event controller (EXTI) are the assets contributing to handling the
exceptions. Exceptions include core-internal events such as, for example, a division by zero
and, core-external events such as logical level changes on physical lines. Exceptions result
in interrupting the program flow, executing an interrupt service routine (ISR) then resuming
the original program flow.
The processor context (contents of program pointer and status registers) is stacked upon
program interrupt and unstacked upon program resume, by hardware. This avoids context
stacking and unstacking in the interrupt service routines (ISRs) by software, thus saving
time, code and power. The ability to abandon and restart load-multiple and store-multiple
operations significantly increases the device’s responsiveness in processing exceptions.

3.13.1 Nested vectored interrupt controller (NVIC)


The configurable nested vectored interrupt controller is tightly coupled with the core. It
handles physical line events associated with a non-maskable interrupt (NMI) and maskable
interrupts, and Cortex-M0+ exceptions. It provides flexible priority management.
The tight coupling of the processor core with NVIC significantly reduces the latency between
interrupt events and start of corresponding interrupt service routines (ISRs). The ISR
vectors are listed in a vector table, stored in the NVIC at a base address. The vector
address of an ISR to execute is hardware-built from the vector table base address and the
ISR order number used as offset.
If a higher-priority interrupt event happens while a lower-priority interrupt event occurring
just before is waiting for being served, the later-arriving higher-priority interrupt event is
served first. Another optimization is called tail-chaining. Upon a return from a higher-priority
ISR then start of a pending lower-priority ISR, the unnecessary processor context
unstacking and stacking is skipped. This reduces latency and contributes to power
efficiency.
Features of the NVIC:
• Low-latency interrupt processing
• 4 priority levels
• Handling of a non-maskable interrupt (NMI)
• Handling of 32 maskable interrupt lines
• Handling of 10 Cortex-M0+ exceptions
• Later-arriving higher-priority interrupt processed first
• Tail-chaining
• Interrupt vector retrieval by hardware

3.13.2 Extended interrupt/event controller (EXTI)


The extended interrupt/event controller adds flexibility in handling physical line events and
allows identifying wake-up events at processor wakeup from Stop mode.
The EXTI controller has a number of channels, of which some with rising, falling or rising,
and falling edge detector capability. Any GPIO and a few peripheral signals can be
connected to these channels.

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STM32G0C1xC/xE Functional overview

The channels can be independently masked.


The EXTI controller can capture pulses shorter than the internal clock period.
A register in the EXTI controller latches every event even in Stop mode, which allows the
software to identify the origin of the processor's wake-up from Stop mode or, to identify the
GPIO and the edge event having caused an interrupt.

3.14 Analog-to-digital converter (ADC)


A native 12-bit analog-to-digital converter is embedded into STM32G0C1xC/xE devices.
The ADC has up to 16 external channels and 3 internal channels (temperature sensor,
voltage reference, VBAT monitoring). It performs conversions in single-shot or scan mode. In
scan mode, automatic conversion is performed on a selected group of analog inputs.
The ADC frequency is independent from the CPU frequency, allowing maximum sampling
rate of ~2.5 MSps even with a low CPU speed. An auto-shutdown function guarantees that
the ADC is powered off except during the active conversion phase.
The ADC can be served by the DMA controller. It can operate in the whole VDD supply
range.
The ADC features a hardware oversampler up to 256 samples, improving the resolution to
16 bits (refer to AN2668).
An analog watchdog feature allows very precise monitoring of the converted voltage of one,
some or all scanned channels. An interrupt is generated when the converted voltage is
outside the programmed thresholds.
The events generated by the general-purpose timers (TIMx) can be internally connected to
the ADC start triggers, to allow the application to synchronize A/D conversions with timers.

3.14.1 Temperature sensor


The temperature sensor (TS) generates a voltage VTS that varies linearly with temperature.
The temperature sensor is internally connected to an ADC input to convert the sensor
output voltage into a digital value.
The sensor provides good linearity but it has to be calibrated to obtain good overall
accuracy of the temperature measurement. As the offset of the temperature sensor may
vary from part to part due to process variation, the uncalibrated internal temperature sensor
is suitable only for relative temperature measurements.
To improve the accuracy of the temperature sensor, each part is individually factory-
calibrated by ST. The resulting calibration data are stored in the part’s engineering bytes,
accessible in read-only mode.

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36
Functional overview STM32G0C1xC/xE

Table 5. Temperature sensor calibration values


Calibration value name Description Memory address

TS ADC raw data acquired at a


TS_CAL1 temperature of 30 °C (± 5 °C), 0x1FFF 75A8 - 0x1FFF 75A9
VDDA = VREF+ = 3.0 V (± 10 mV)
TS ADC raw data acquired at a
TS_CAL2 temperature of 130 °C (± 5 °C), 0x1FFF 75CA - 0x1FFF 75CB
VDDA = VREF+ = 3.0 V (± 10 mV)

3.14.2 Internal voltage reference (VREFINT)


The internal voltage reference (VREFINT) provides a stable (bandgap) voltage output for the
ADC and comparators. VREFINT is internally connected to an ADC input. The VREFINT
voltage is individually precisely measured for each part by ST during production test and
stored in the part’s engineering bytes. It is accessible in read-only mode.

Table 6. Internal voltage reference calibration values


Calibration value name Description Memory address

Raw data acquired at a


VREFINT temperature of 30 °C (± 5 °C), 0x1FFF 75AA - 0x1FFF 75AB
VDDA = VREF+ = 3.0 V (± 10 mV)

3.14.3 VBAT battery voltage monitoring


This embedded hardware feature allows the application to measure the VBAT battery voltage
using an internal ADC input. As the VBAT voltage may be higher than VDDA and thus outside
the ADC input range, the VBAT pin is internally connected to a bridge divider by three. As a
consequence, the converted digital value is one third the VBAT voltage.

3.15 Digital-to-analog converter (DAC)


The 2-channel 12-bit buffered DAC converts a digital value into an analog voltage available
on the channel output. The architecture of either channel is based on integrated resistor
string and an inverting amplifier. The digital circuitry is common for both channels.

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STM32G0C1xC/xE Functional overview

Features of the DAC:


• Two DAC output channels
• 8-bit or 12-bit output mode
• Buffer offset calibration (factory and user trimming)
• Left or right data alignment in 12-bit mode
• Synchronized update capability
• Noise-wave generation
• Triangular-wave generation
• Independent or simultaneous conversion for DAC channels
• DMA capability for either DAC channel
• Triggering with timer events, synchronized with DMA
• Triggering with external events
• Sample-and-hold low-power mode, with internal or external capacitor

3.16 Voltage reference buffer (VREFBUF)

When enabled, an embedded buffer provides the internal reference voltage to analog
blocks (for example ADC) and to VREF+ pin for external components.
The internal voltage reference buffer supports two voltages:
• 2.048 V
• 2.5 V
An external voltage reference can be provided through the VREF+ pin when the internal
voltage reference buffer is disabled.
On some packages, the VREF+ pad of the silicon die is double-bonded with supply pad to
common VDD/VDDA pin and so the internal voltage reference buffer cannot be used.

3.17 Comparators (COMP)


Three embedded rail-to-rail analog comparators have programmable reference voltage
(internal or external), hysteresis, speed (low for low-power) and output polarity.
The reference voltage can be one of the following:
• external, from an I/O
• internal, from DAC
• internal reference voltage (VREFINT) or its submultiple (1/4, 1/2, 3/4)
The comparators can wake up the device from Stop mode, generate interrupts, breaks or
triggers for the timers and can be also combined into a window comparator.

3.18 True random-number generator (RNG)


The RNG is a true random-number generator that provides full-entropy outputs to the
application as 32-bit samples. It is composed of a live entropy source (analog) and an
internal conditioning component.

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Functional overview STM32G0C1xC/xE

The RNG can be used to construct a NIST-compliant deterministic random bit generator
(DRBG), acting as a live entropy source.
The RNG is tested using the German BSI statistical tests of AIS-31 (T0 to T8).

3.19 Advanced-encryption-standard (AES) hardware accelerator


The embedded AES hardware accelerator can encipher or decipher data, using AES
algorithm.
Features of AES:
• Encryption/decryption using AES Rijndael Block Cipher algorithm
• NIST-FIPS-197-compliant implementation of AES encryption/decryption algorithm
• 128-bit and 256-bit register for storing the encryption, decryption or derivation key (four
32-bit registers)
• Electronic codebook (ECB), cipher block chaining (CBC), counter (CTR), Galois
counter (GCM), Galois message authentication code (GMAC) and cipher message
authentication code (CMAC) modes supported
• Key scheduler
• Key derivation for decryption
• 128-bit data block processing
• 128-bit and 256-bit key length
• 32-bit input and output buffers
• Register access supporting 32-bit data width
• 128-bit register for the initialization vector when AES is configured in CBC mode or for
the 32-bit counter initialization when CTR mode is selected, GCM mode or CMAC
mode
• Automatic data flow control with support of direct memory access (DMA) using 2
channels, one for incoming data, the other for outcoming data
• Message processing suspend to process another message with higher priority

3.20 Timers and watchdogs


The device includes an advanced-control timer, seven general-purpose timers, two basic
timers, two low-power timers, two watchdog timers and a SysTick timer. Table 7 compares
features of the advanced-control, general-purpose and basic timers.

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Table 7. Timer feature comparison


Counter Maximum DMA Capture/ Comple-
Counter Prescaler
Timer type Timer resolutio operating request compare mentary
type factor
n frequency generation channels outputs

Advanced- Up, down, Integer from 4


TIM1 16-bit 128 MHz Yes 3
control up/down 1 to 216 + 2 internal
Up, down, Integer from
TIM2 32-bit 64 MHz Yes 4 -
up/down 1 to 216
Up, down, Integer from
TIM3 16-bit 64 MHz Yes 4 -
up/down 1 to 216
Up, down, Integer from
TIM4 16-bit 64 MHz Yes 4 -
General- up/down 1 to 216
purpose Integer from
TIM14 16-bit Up 64 MHz No 1 -
1 to 216
Integer from
TIM15 16-bit Up 128 MHz Yes 2 1
1 to 216
TIM16 Integer from
16-bit Up 64 MHz Yes 1 1
TIM17 1 to 216
TIM6 Integer from
Basic 16-bit Up 64 MHz Yes - -
TIM7 1 to 216
LPTIM1 2n where
Low-power 16-bit Up 64 MHz No N/A -
LPTIM2 n=0 to 7

3.20.1 Advanced-control timer (TIM1)


The advanced-control timer can be seen as a three-phase PWM unit multiplexed on 6
channels. It has complementary PWM outputs with programmable inserted dead-times. It
can also be seen as a complete general-purpose timer. The four independent channels can
be used for:
• input capture
• output compare
• PWM output (edge or center-aligned modes) with full modulation capability (0-100%)
• one-pulse mode output
On top of these, there are two internal channels that can be used.
In debug mode, the advanced-control timer counter can be frozen and the PWM outputs
disabled, so as to turn off any power switches driven by these outputs.
Many features are shared with those of the general-purpose TIMx timers (described in
Section 3.20.2) using the same architecture, so the advanced-control timers can work
together with the TIMx timers via the Timer Link feature for synchronization or event
chaining.

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Functional overview STM32G0C1xC/xE

3.20.2 General-purpose timers (TIM2, 3, 4, 14, 15, 16, 17)


There are seven synchronizable general-purpose timers embedded in the device (refer to
Table 7 for comparison). Each general-purpose timer can be used to generate PWM outputs
or act as a simple timebase.
• TIM2, TIM3, and TIM4
These are full-featured general-purpose timers:
– TIM2 with 32-bit auto-reload up/downcounter and 16-bit prescaler
– TIM3 and TIM4 with 16-bit auto-reload up/downcounter and 16-bit prescaler
They have four independent channels for input capture/output compare, PWM or one-
pulse mode output. They can operate in combination with other general-purpose timers
via the Timer Link feature for synchronization or event chaining. They can generate
independent DMA request and support quadrature encoders. Their counter can be
frozen in debug mode.
• TIM14
This timer is based on a 16-bit auto-reload upcounter and a 16-bit prescaler. It has one
channel for input capture/output compare, PWM output or one-pulse mode output. Its
counter can be frozen in debug mode.
• TIM15, TIM16, TIM17
These are general-purpose timers featuring:
– 16-bit auto-reload upcounter and 16-bit prescaler
– 2 channels and 1 complementary channel for TIM15
– 1 channel and 1 complementary channel for TIM16 and TIM17
All channels can be used for input capture/output compare, PWM or one-pulse mode
output. The timers can operate together via the Timer Link feature for synchronization
or event chaining. They can generate independent DMA request. Their counters can
be frozen in debug mode.

3.20.3 Basic timers (TIM6 and TIM7)

These timers are mainly used for triggering DAC conversions. They can also be used as
generic 16-bit timebases.

3.20.4 Low-power timers (LPTIM1 and LPTIM2)


These timers have an independent clock. When fed with LSE, LSI or external clock, they
keep running in Stop mode and they can wake up the system from it.

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STM32G0C1xC/xE Functional overview

Features of LPTIM1 and LPTIM2:


• 16-bit up counter with 16-bit autoreload register
• 16-bit compare register
• Configurable output (pulse, PWM)
• Continuous/one-shot mode
• Selectable software/hardware input trigger
• Selectable clock source:
– Internal: LSE, LSI, HSI16 or APB clocks
– External: over LPTIM input (working even with no internal clock source running,
used by pulse counter application)
• Programmable digital glitch filter
• Encoder mode

3.20.5 Independent watchdog (IWDG)


The independent watchdog is based on an 8-bit prescaler and 12-bit downcounter with
user-defined refresh window. It is clocked from an independent 32 kHz internal RC (LSI).
Independent of the main clock, it can operate in Stop and Standby modes. It can be used
either as a watchdog to reset the device when a problem occurs, or as a free-running timer
for application timeout management. It is hardware- or software-configurable through the
option bytes. Its counter can be frozen in debug mode.

3.20.6 System window watchdog (WWDG)


The window watchdog is based on a 7-bit downcounter that can be set as free-running. It
can be used as a watchdog to reset the device when a problem occurs. It is clocked by the
system clock. It has an early-warning interrupt capability. Its counter can be frozen in debug
mode.

3.20.7 SysTick timer


This timer is dedicated to real-time operating systems, but it can also be used as a standard
down counter.
Features of SysTick timer:
• 24-bit down counter
• Autoreload capability
• Maskable system interrupt generation when the counter reaches 0
• Programmable clock source

3.21 Real-time clock (RTC), tamper (TAMP) and backup registers


The device embeds an RTC and five 32-bit backup registers, located in the RTC domain of
the silicon die.
The ways of powering the RTC domain are described in Section 3.7.6.
The RTC is an independent BCD timer/counter.

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Functional overview STM32G0C1xC/xE

Features of the RTC:


• Calendar with subsecond, seconds, minutes, hours (12 or 24 format), week day, date,
month, year, in BCD (binary-coded decimal) format
• Automatic correction for 28, 29 (leap year), 30, and 31 days of the month
• Programmable alarm
• On-the-fly correction from 1 to 32767 RTC clock pulses, usable for synchronization with
a master clock
• Reference clock detection - a more precise second-source clock (50 or 60 Hz) can be
used to improve the calendar precision
• Digital calibration circuit with 0.95 ppm resolution, to compensate for quartz crystal
inaccuracy
• Two anti-tamper detection pins with programmable filter
• Timestamp feature to save a calendar snapshot, triggered by an event on the
timestamp pin or a tamper event, or by switching to VBAT mode
• 17-bit auto-reload wakeup timer (WUT) for periodic events, with programmable
resolution and period
• Multiple clock sources and references:
– A 32.768 kHz external crystal (LSE)
– An external resonator or oscillator (LSE)
– The internal low-power RC oscillator (LSI, with typical frequency of 32 kHz)
– The high-speed external clock (HSE) divided by 32
When clocked by LSE, the RTC operates in VBAT mode and in all low-power modes. When
clocked by LSI, the RTC does not operate in VBAT mode, but it does in low-power modes
except for the Shutdown mode.
All RTC events (Alarm, WakeUp Timer, Timestamp or Tamper) can generate an interrupt
and wake the device up from the low-power modes.
The backup registers allow keeping 20 bytes of user application data in the event of VDD
failure, if a valid backup supply voltage is provided on VBAT pin. They are not affected by
the system reset, power reset, and upon the device’s wakeup from Standby or Shutdown
modes.

3.22 Inter-integrated circuit interface (I2C)


The device embeds three I2C peripherals. Refer to Table 8 for the features.
The I2C-bus interface handles communication between the microcontroller and the serial
I2C-bus. It controls all I2C-bus-specific sequencing, protocol, arbitration and timing.

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Features of the I2C peripheral:


• I2C-bus specification and user manual rev. 5 compatibility:
– Slave and master modes, multimaster capability
– Standard-mode (Sm), with a bitrate up to 100 kbit/s
– Fast-mode (Fm), with a bitrate up to 400 kbit/s
– Fast-mode Plus (Fm+), with a bitrate up to 1 Mbit/s and extra output drive I/Os
– 7-bit and 10-bit addressing mode, multiple 7-bit slave addresses
– Programmable setup and hold times
– Clock stretching
• SMBus specification rev 3.0 compatibility:
– Hardware PEC (packet error checking) generation and verification with ACK
control
– Command and data acknowledge control
– Address resolution protocol (ARP) support
– Host and Device support
– SMBus alert
– Timeouts and idle condition detection
• PMBus rev 1.3 standard compatibility
• Independent clock: a choice of independent clock sources allowing the I2C
communication speed to be independent of the PCLK reprogramming
• Wakeup from Stop mode on address match
• Programmable analog and digital noise filters
• 1-byte buffer with DMA capability

Table 8. I2C implementation


I2C1
I2C features(1) I2C3
I2C2

Standard mode (up to 100 kbit/s) X X


Fast mode (up to 400 kbit/s) X X
Fast Mode Plus (up to 1 Mbit/s) with extra output drive I/Os X X
Programmable analog and digital noise filters X X
SMBus/PMBus hardware support X -
Independent clock X -
Wakeup from Stop mode on address match X -
1. X: supported

3.23 Universal synchronous/asynchronous receiver transmitter


(USART)
The device embeds universal synchronous/asynchronous receivers/transmitters that
communicate at speeds of up to 8 Mbit/s.

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Functional overview STM32G0C1xC/xE

They provide hardware management of the CTS, RTS and RS485 DE signals,
multiprocessor communication mode, SPI synchronous communication and single-wire
half-duplex communication mode. Some can also support SmartCard communication (ISO
7816), IrDA SIR ENDEC, LIN Master/Slave capability and auto baud rate feature, and have
a clock domain independent of the CPU clock, which allows them to wake up the MCU from
Stop mode. The wakeup events from Stop mode are programmable and can be:
• start bit detection
• any received data frame
• a specific programmed data frame
All USART interfaces can be served by the DMA controller.

Table 9. USART implementation


USART1 USART4
USART modes/features(1) USART2 USART5
USART3 USART6

Hardware flow control for modem X X


Continuous communication using DMA X X
Multiprocessor communication X X
SPI emulation master/slave (synchronous mode) X X
Smartcard mode X -
Single-wire half-duplex communication X X
IrDA SIR ENDEC block X -
LIN mode X -
Dual clock domain and wakeup from Stop mode X -
Receiver timeout interrupt X -
Modbus communication X -
Auto baud rate detection X -
Driver Enable X X
1. X: supported

3.24 Low-power universal asynchronous receiver transmitter


(LPUART)
The device embeds two LPUARTs. The peripheral supports asynchronous serial
communication with minimum power consumption. It supports half duplex single wire
communication and modem operations (CTS/RTS). It allows multiprocessor
communication.
The LPUART has a clock domain independent of the CPU clock, and can wakeup the
system from Stop mode. The Stop mode wakeup events are programmable and can be:
• start bit detection
• any received data frame
• a specific programmed data frame

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STM32G0C1xC/xE Functional overview

Only a 32.768 kHz clock (LSE) is needed to allow LPUART communication up to 9600
baud. Therefore, even in Stop mode, the LPUART can wait for an incoming frame while
having an extremely low energy consumption. Higher speed clock can be used to reach
higher baudrates.
The LPUART interface can be served by the DMA controller.

3.25 Serial peripheral interface (SPI)


The device contains three SPIs running at up to 32 Mbits/s in master and slave modes. It
supports half-duplex, full-duplex and simplex communications. A 3-bit prescaler gives eight
master mode frequencies. The frame size is configurable from 4 bits to 16 bits. The SPI
peripherals support NSS pulse mode, TI mode and hardware CRC calculation.
The SPI peripherals can be served by the DMA controller.
The I2S interface mode of the SPI peripheral (if supported, see the following table) supports
four different audio standards can operate as master or slave, in half-duplex communication
mode. It can be configured to transfer 16 and 24 or 32 bits with 16-bit or 32-bit data
resolution and synchronized by a specific signal. Audio sampling frequency from 8 kHz up to
192 kHz can be set by an 8-bit programmable linear prescaler. When operating in master
mode, it can output a clock for an external audio component at 256 times the sampling
frequency.

Table 10. SPI/I2S implementation


SPI1
SPI features(1) SPI3
SPI2

Hardware CRC calculation X X


Rx/Tx FIFO X X
NSS pulse mode X X
2S
I mode X -
TI mode X X
1. X = supported.

3.26 Universal serial bus full-speed host/device interface (USB)


The devices embed a USB controller with full-speed USB device and host functionality
compliant with the USB specification version 2.0. The internal USB PHY supports USB FS
signaling, embedded DP pull-up and also battery charging detection according to Battery
Charging Specification Revision 1.2. The USB interface implements a full-speed (12 Mbit/s)
function interface with added support for USB 2.0 Link Power Management. It has software-
configurable endpoint setting with packet memory of 2 KB and suspend/resume support. It
requires a precise 48 MHz clock that is generated from the internal main PLL (the clock
source must come from a high-speed external clock, that is, from an external source or an
oscillator, see note) or by the internal 48 MHz oscillator in automatic trimming mode. The
synchronization for this oscillator can be taken from the USB data stream itself (SOF
signalization) which allows crystal less operation in USB device mode.

Note: On the STM32G0C1Kx device, only HSE external source clock is available (HSE bypass).

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Functional overview STM32G0C1xC/xE

3.27 USB Type-C Power Delivery controller


The device embeds two controllers (UCPD1 and UCPD2) compliant with USB Type-C Rev.
1.2 and USB Power Delivery Rev. 3.0 specifications.
The controllers use specific I/Os supporting the USB Type-C and USB Power Delivery
requirements, featuring:
• USB Type-C pull-up (Rp, all values) and pull-down (Rd) resistors
• “Dead battery” support
• USB Power Delivery message transmission and reception
• FRS (fast role swap) support
The digital controller handles notably:
• USB Type-C level detection with de-bounce, generating interrupts
• FRS detection, generating an interrupt
• byte-level interface for USB Power Delivery payload, generating interrupts (DMA
compatible)
• USB Power Delivery timing dividers (including a clock pre-scaler)
• CRC generation/checking
• 4b5b encode/decode
• ordered sets (with a programmable ordered set mask at receive)
• frequency recovery in receiver during preamble
The interface offers low-power operation compatible with Stop mode, maintaining the
capacity to detect incoming USB Power Delivery messages and FRS signaling.

3.28 Controller area network (FDCAN)


The controller area network (CAN) subsystem consists of two CAN modules and a message
RAM.
The CAN modules are compliant with ISO 11898-1 (CAN protocol specification version 2.0
part A, B) and CAN FD protocol specification version 1.0.
The 1-Kbyte message RAM per CAN module implements filters, receive FIFOs, receive
buffers, transmit event FIFOs, and transmit buffers.

3.29 Development support

3.29.1 Serial wire debug port (SW-DP)


An Arm SW-DP interface is provided to allow a serial wire debugging tool to be connected to
the MCU.

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STM32G0C1xC/xE Pinouts, pin description and alternate functions

4 Pinouts, pin description and alternate functions

The devices housed in 32-pin, 48-pin, and 64-pin packages come in two variants - “GP” and
“N” (the latter with ordering code having N behind the temperature range digit). Refer to
Table 2: Features and peripheral counts for differences.

Figure 3. STM32G0C1KxT LQFP32 pinout

PA14-BOOT0
PA15
Top view

PB8
PB7
PB6
PB5

PB3
PB4
32
31
30
29
28
27
26
25
PB9 1 24 PA13
PC14-OSC32_IN 2 23 PA12 [PA10]
PC15-OSC32_OUT 3 22 PA11 [PA9]
VDD/VDDA 4 21 PA10
VSS/VSSA 5
LQFP32 20 PC6
PF2-NRST 6 19 PA9
PA0 7 18 PA8 GP version
PA1 8 17 PB2 (_KxT)
10

12
13
14
15
16
11
9

PB0
PB1
PA2
PA3
PA4
PA5
PA6
PA7

MSv39712V3
PA14-BOOT0

Top view
PD3

PD1
PD0
PD2
PB8
PB7
PB6
32
31
30
29
28
27
26
25

PB9 1 24 PA13
PC14-OSC32_IN 2 23 PA12 [PA10]
PC15-OSC32_OUT 3 22 PA11 [PA9]
VDD/VDDA 4 21 PA10
VSS/VSSA 5
LQFP32 20 VDDIO2
PF2-NRST 6 19 PA9
PA0 7 18 PA8 N version
PA1 8 17 PB15 (_KxTxN)
10

12
13
14
15
16
11
9

PB0
PB1
PA2
PA3
PA4
PA5
PA6
PA7

MSv63108V3

1. The I/O pins supplied by VDDIO2 are shown in dark gray.

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Pinouts, pin description and alternate functions STM32G0C1xC/xE

Figure 4. STM32G0C1KxU UFQFPN32 pinout

PA14-BOOT0
Top view

PA15
PB8
PB7
PB6
PB5
PB4
PB3
32
31
30
29
28
27
26
25
PB9 1 24 PA13
PC14-OSC32_IN 2 23 PA12 [PA10]
PC15-OSC32_OUT 3 22 PA11 [PA9]
VDD/VDDA 4 21 PA10
VSS/VSSA 5 UFQFPN32 20 PC6
PF2-NRST 6 19 PA9
PA0 7 Exposed pad 18 PA8 GP version
PA1 8 17 PB2 (_KxU)

10

12
13
14
15
16
11
9
VSS

PB0
PB1
PA2
PA3
PA4
PA5
PA6
PA7
MSv39715V3

PA14-BOOT0
Top view PD3
PD2
PD1
PD0
PB8
PB7
PB6
32
31
30
29
28
27
26
25

PB9 1 24 PA13
PC14-OSC32_IN 2 23 PA12 [PA10]
PC15-OSC32_OUT 3 22 PA11 [PA9]
VDD/VDDA 4 21 PA10
VSS/VSSA 5 UFQFPN32 20 VDDIO2
PF2-NRST 6 19 PA9
PA0 7 Exposed pad 18 PA8 N version
PA1 8 17 PB15 (_KxUxN)
10

12
13
14
15
16
11
9

VSS
PB0
PB1
PA2
PA3
PA4
PA5
PA6
PA7

MSv63109V3

1. The I/O pads supplied by VDDIO2 are shown in gray.

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STM32G0C1xC/xE Pinouts, pin description and alternate functions

Figure 5. STM32G0C1CxT LQFP48 pinout

Top view

PA15
PD3
PD2
PD1
PD0
PB9
PB8
PB7
PB6
PB5
PB4
PB3
48
47
46
45
44
43
42
41
40
39
38
37
PC13 1 36 PA14-BOOT0
PC14-OSC32_IN 2 35 PA13
PC15-OSC32_OUT 3 34 PA12 [PA10]
VBAT 4 33 PA11 [PA9]
VREF+ 5 32 PA10
GP version
VDD/VDDA 6 31 PC7
LQFP48 (_CxT)
VSS/VSSA 7 30 PC6
PF0-OSC_IN 8 29 PA9
PF1-OSC_OUT 9 28 PA8
PF2-NRST 10 27 PB15
PA0 11 26 PB14
PA1 12 25 PB13
13
14
15
16
17
18
19
20
21
22
23
24
PB0
PB1
PB2
PB10

PB12
PA2
PA3
PA4
PA5
PA6
PA7

PB11
MSv63197V1

Top view

PA15
PD3
PD2
PD1
PD0
PB9
PB8
PB7
PB6
PB5
PB4
PB3
48
47
46
45
44
43
42
41
40
39
38
37
PC13 1 36 PA14-BOOT0
PC14-OSC32_IN 2 35 PA13
PC15-OSC32_OUT 3 34 PA12 [PA10]
VBAT 4 33 PA11 [PA9]
VREF+ 5 32 PA10
VDD/VDDA 6 31 VDDIO2
VSS/VSSA 7
LQFP48 30 VSS N version
PF0-OSC_IN 8 29 PA9 (_CxTxN)
PF1-OSC_OUT 9 28 PA8
PF2-NRST 10 27 PB15
PA0 11 26 PB14
PA1 12 25 PB13
13
14
15
16
17
18
19
20
21
22
23
24
PB0
PB1
PB2
PB10

PB12
PA2
PA3
PA4
PA5
PA6
PA7

PB11

MSv63106V3

1. The I/O pins supplied by VDDIO2 are shown in gray.

DS13564 Rev 5 39/163


56
Pinouts, pin description and alternate functions STM32G0C1xC/xE

Figure 6. STM32G0C1CxU UFQFPN48 pinout

Top view

PA15
PD3
PD2
PD1
PD0
PB9
PB8
PB7
PB6
PB5
PB4
PB3
48
47
46
45
44
43
42
41
40
39
38
37
PC13 1 36 PA14-BOOT0
PC14-OSC32_IN 2 35 PA13
PC15-OSC32_OUT 3 34 PA12 [PA10]
VBAT 4 33 PA11 [PA9]
VREF+ 5 32 PA10
VDD/VDDA 6 31 PC7
GP version
VSS/VSSA 7 UFQFPN48 30 PC6 (_CxU)
PF0-OSC_IN 8 29 PA9
PF1-OSC_OUT 9 28 PA8
PF2-NRST 10 27 PB15
PA0 11 Exposed pad 26 PB14
PA1 12 25 PB13
13
14
15
16
17
18
19
20
21
22
23
24
VSS

PB0
PB1
PB2
PB10

PB12
PA2
PA3
PA4
PA5
PA6
PA7

PB11
MSv63198V1

Top view

PA15
PD3
PD2
PD1
PD0
PB9
PB8
PB7
PB6
PB5
PB4
PB3
48
47
46
45
44
43
42
41
40
39
38
37

PC13 1 36 PA14-BOOT0
PC14-OSC32_IN 2 35 PA13
PC15-OSC32_OUT 3 34 PA12 [PA10]
VBAT 4 33 PA11 [PA9]
VREF+ 5 32 PA10 N version
VDD/VDDA 6 31 VDDIO2 (_CxUxN)
VSS/VSSA 7 UFQFPN48 30 VSS
PF0-OSC_IN 8 29 PA9
PF1-OSC_OUT 9 28 PA8
PF2-NRST 10 27 PB15
PA0 11 Exposed pad 26 PB14
PA1 12 25 PB13
13
14
15
16
17
18
19
20
21
22
23
24

VSS
PB0
PB1
PB2
PB10

PB12
PA2
PA3
PA4
PA5
PA6
PA7

PB11

MSv63107V3

1. The I/O pads supplied by VDDIO2 are shown in gray.

40/163 DS13564 Rev 5


STM32G0C1xC/xE Pinouts, pin description and alternate functions

Figure 7. STM32G0C1NxY WLCSP52 pinout


Top view

1 2 3 4 5 6 7 8 9 10 11 12 13

A PA15 PD0 PD3 PB3 PB5 PB8

PC14-
PA12 PA14-
B PA13 PD2 PB4 PC13 OSC32
[PA10] BOOT0
_IN

PC15-
PA11
C [PA9]
PA10 PD1 PB6 VBAT OSC32
_OUT

VDDIO VDD/
D 2
PC7 PC6 PB7 PB9 VREF+
VDDA

VSS/
E VSS PA9 PB12 PA2 PA1
VSSA

PF2- PF0-
F PA8 PB15 PB11 PA6 PA5
NRST OSC_IN

PF1-
G PB14 PB2 PC5 PC4 PA4 OSC_
OUT

H PB13 PB10 PB1 PB0 PA7 PA3 PA0

MSv63196V3

1. The I/O pads supplied by VDDIO2 are shown in gray.

DS13564 Rev 5 41/163


56
Pinouts, pin description and alternate functions STM32G0C1xC/xE

Figure 8. STM32G0C1RxT LQFP64 pinout

PC10
Top view

PD6
PD5
PD4
PD3
PD2
PD1
PD0
PC9
PB9
PB8
PB7

PB5
PB4
PB3
PB6
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
PC11 1 48 PC8
PC12 2 47 PA15
PC13 3 46 PA14-BOOT0
PC14-OSC32_IN 4 45 PA13
PC15-OSC32_OUT 5 44 PA12 [PA10]
VBAT 6 43 PA11 [PA9]
VREF+ 7 42 PA10
VDD/VDDA 8 41 PD9
VSS/VSSA 9 LQFP64 40 PD8 GP version
PF0-OSC_IN 10 39 PC7 (_RxT)
PF1-OSC_OUT 11 38 PC6
PF2-NRST 12 37 PA9
PC0 13 36 PA8
PC1 14 35 PB15
PC2 15 34 PB14
PC3 16 33 PB13
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
PC4
PC5
PB0
PB1
PB2
PB10

PB12
PA0
PA1
PA2
PA3
PA4
PA5
PA6
PA7

PB11
MSv63199V1
PC10

Top view
PD6
PD5
PD4
PD3
PD2
PD1
PD0
PC9
PB9
PB8
PB7

PB5
PB4
PB3
PB6
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49

PC11 1 48 PC8
PC12 2 47 PA15
PC13 3 46 PA14-BOOT0
PC14-OSC32_IN 4 45 PA13
PC15-OSC32_OUT 5 44 PA12 [PA10]
VBAT 6 43 PA11 [PA9]
VREF+ 7 42 PA10
VDD/VDDA 8 41 VDDIO2
9 LQFP64 40
VSS/VSSA
10 39
VSS
N version
PF0-OSC_IN PC7
PF1-OSC_OUT 11 38 PC6
(_RxTxN)
PF2-NRST 12 37 PA9
PC0 13 36 PA8
PC1 14 35 PB15
PC2 15 34 PB14
PC3 16 33 PB13
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
PC4
PC5
PB0
PB1
PB2
PB10

PB12
PA0
PA1
PA2
PA3
PA4
PA5
PA6
PA7

PB11

MSv63105V3

1. The I/O pins supplied by VDDIO2 are shown in gray.

42/163 DS13564 Rev 5


STM32G0C1xC/xE Pinouts, pin description and alternate functions

Figure 9. STM32G0C1RxI UFBGA64 pinout


1 2 3 4 5 6 7 8
Top view
A PC11 PC10 PB7 PB6 PD6 PD2 PD0 PC8

PC15-
PA12
B OSC32 PC12 PB8 PB3 PD5 PD1 PC9
[PA10]
_OUT

PC14-
PA14- PA11
C OSC32 PC13 PB9 PB4 PD4 PA15
BOOT0 [PA9]
_IN

VDD/ VDDIO
D VDDA
VREF+ VBAT PB5 PD3 PA10 PA13
2
N version
E
VSS/ PF2-
PC0 PA7 PC7 PA9 PC6 VSS (_RxIxN)
VSSA NRST

PF0-
F OSC_I PC1 PA3 PA6 PB0 PB14 PB15 PA8
N

PF1-
G OSC_ PC2 PA2 PA5 PB1 PB10 PB12 PB13
OUT

H PC3 PA0 PA1 PA4 PC4 PC5 PB2 PB11

MSv63110V3

1. The I/O balls supplied by VDDIO2 are shown in gray.

DS13564 Rev 5 43/163


56
Pinouts, pin description and alternate functions STM32G0C1xC/xE

Figure 10. STM32G0C1MxT LQFP80 pinout

Top view

PA15
PD7
PD6
PD5
PD4
PD3
PD2
PD1
PD0
PC9
PC8
PB8
PB7
PB6
PE3
PE1
PE0
PB5
PB4
PB3
80

79

78

77

76

75

74

73

72

71

70

69

68

67

66

65

64

63

62

61
PB9 1 60 PA14-BOOT0
PC10 2 59 PA13
PC11 3 58 PA12 [PA10]
PC12 4 57 PA11 [PA9]
PC13 5 56 PA10
PC14-OSC32_IN 6 55 PD15
PC15-OSC32_OUT 7 54 PD14
VBAT 8 53 PD13
VREF+ 9 52 PD12
VDD/VDDA 10 51 VDDIO2
VSS/VSSA 11
LQFP80 50 VSS
PF0-OSC_IN 12 49 PD11
PF1-OSC_OUT 13 48 PD10
PF2-NRST 14 47 PD9
PC0 15 46 PD8
PC1 16 45 PC7
PC2 17 44 PC6
PC3 18 43 PA9
PA0 19 42 PA8
PA1 20 41 PB15
21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

36

37

38

39

40
PC4
PC5
PB0
PB1
PB2
PE7
PE8
PE9
PE10
PB10

PB12
PB13
PB14
PA2
PA3
PA4
PA5
PA6
PA7

PB11

MSv63194V3

1. The I/O pins supplied by VDDIO2 are shown in gray.

44/163 DS13564 Rev 5


STM32G0C1xC/xE Pinouts, pin description and alternate functions

Figure 11. STM32G0C1VxT LQFP100 pinout

Top view

PF13
PF12

PF10
PF11

PD7
PD6
PD5
PD4
PD3
PD2
PD1
PD0
PC9
PC8
PB8
PB7
PB6
PE3
PE2
PE1
PE0
PB5
PB4
PB3

PF9
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
PB9 1 75 PA15
PC10 2 74 PA14-BOOT0
PC11 3 73 PA13
PE4 4 72 PF8
PE5 5 71 PA12 [PA10]
PE6 6 70 PA11 [PA9]
PC12 7 69 PA10
PC13 8 68 PD15
PC14-OSC32_IN 9 67 PD14
PC15-OSC32_OUT 10 66 PD13
VBAT 11 65 PD12
VREF+ 12 64 VDDIO2
VDD/VDDA 13 LQFP100 63 VSS
VSS/VSSA 14 62 PD11
PF0-OSC_IN 15 61 PD10
PF1-OSC_OUT 16 60 PD9
PF2-NRST 17 59 PD8
PF3 18 58 PC7
PF4 19 57 PC6
PF5 20 56 PA9
PC0 21 55 PA8
PC1 22 54 PB15
PC2 23 53 PB14
PC3 24 52 PB13
PA0 25 51 PB12
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
PC4
PC5
PB0
PB1
PB2
PF6
PF7
PE7
PE8
PE9
PE10

PE12
PE13
PE14
PE15
PB10
PA1
PA2
PA3
PA4
PA5
PA6
PA7

PE11

PB11

MSv63111V4

1. The I/O pins supplied by VDDIO2 are shown in gray.

DS13564 Rev 5 45/163


56
Pinouts, pin description and alternate functions STM32G0C1xC/xE

Figure 12. STM32G0C1VxI UFBGA100 pinout

Top view
1 2 3 4 5 6 7 8 9 10 11 12

A PB8 PE3 PE2 PE0 PB3 PF13 PF11 PF9 PD6 PD5 PD2 PC9

PA14-
B PC11 PC10 PB7 PE1 PB4 PF12 PF10 PD7 PD4 PD0 PA15
BOOT0

PA12
C PE6 PE4 PB9 PB6 PB5 PD3 PD1 PC8 PA13
[PA10]

PC14-
PA11
D OSC32 PC12 PE5 PF8 PD15
[PA9]
_IN

PC15-
E OSC32 VBAT PC13 PA10 PD14 PD13
_OUT

VDD/ VDDIO
F VDDA
VREF+ PD12
2

VSS/ PF2-
G VSSA NRST
PD11 VSS

PF0-
H OSC_I PF4 PF3 PA9 PD9 PD10
N

PF1-
J OSC_ PF5 PC1 PB15 PC6 PD8
OUT

K PC0 PC2 PA0 PA3 PA7 PE9 PE14 PB12 PB14 PC7

L PC3 PA1 PA4 PC4 PB0 PB2 PF7 PE10 PE12 PE15 PB11 PA8

M PA2 PA5 PA6 PC5 PB1 PF6 PE7 PE8 PE11 PE13 PB10 PB13

MSv63195V3

1. The I/O balls supplied by VDDIO2 are shown in gray.

46/163 DS13564 Rev 5


STM32G0C1xC/xE Pinouts, pin description and alternate functions

Table 11. Terms and symbols used in Table 12


Column Symbol Definition

Terminal name corresponds to its by-default function at reset, unless otherwise specified in
Pin name
parenthesis under the pin name.
S Supply pin
Pin type I Input only pin
I/O Input / output pin
FT 5 V tolerant I/O
TT 3.6 V tolerant I/O
RST Reset pin with embedded weak pull-up resistor
Options for TT or FT I/Os
_f I/O, Fm+ capable
I/O structure
_a I/O, with analog switch function
_c I/O, USB Type-C PD capable
_e I/O, with switchable diode to VDDIOx
_d I/O, USB Type-C PD Dead Battery function
_u I/O, with USB function
_s I/O, supplied from VDDIO2 only

Note Upon reset, all I/Os are set as analog inputs, unless otherwise specified.

Alternate
Functions selected through GPIOx_AFR registers
Pin functions
functions Additional
Functions directly selected/enabled through peripheral registers
functions

DS13564 Rev 5 47/163


56
48/163

Pinouts, pin description and alternate functions


Table 12. Pin assignment and description

Pin number

LQFP32 / UFQFPN32 - GP

LQFP48 / UFQFPN48 - GP
LQFP32 / UFQFPN32 - N

LQFP48 / UFQFPN48 - N

I/O structure
Pin type
UFBGA64 - N
LQFP64 - GP
Alternate Additional

LQFP64 - N

Note
UFBGA100
WLCSP52
Pin name

LQFP100
LQFP80
functions functions

- - - - - 64 64 A2 2 2 B2 PC10 I/O FT - USART3_TX, USART4_TX, TIM1_CH3, SPI3_SCK -

- - - - - 1 1 A1 3 3 B1 PC11 I/O FT - USART3_RX, USART4_RX, TIM1_CH4, SPI3_MISO -

- - - - - - - - - 4 C2 PE4 I/O FT - TIM3_CH2 -


DS13564 Rev 5

- - - - - - - - - 5 D3 PE5 I/O FT - TIM3_CH3 -

- - - - - - - - - 6 C1 PE6 I/O FT - TIM3_CH4 TAMP_IN3, WKUP3

LPTIM1_IN1, UCPD1_FRSTX, TIM14_CH1,


- - - - - 2 2 B2 4 7 D2 PC12 I/O FT - -
USART5_TX, SPI3_MOSI

(1)(2) TAMP_IN1, RTC_TS,


- - 1 1 B11 3 3 C2 5 8 E3 PC13 I/O FT TIM1_BKIN
RTC_OUT1, WKUP2

PC14- (1)(2)
- - 2 2 B13 4 4 C1 6 9 D1 I/O FT TIM1_BKIN2 OSC32_IN
OSC32_IN

PC14- (1)(2)
2 2 - - - - - - - - - I/O FT TIM1_BKIN2 OSC32_IN, OSC_IN
OSC32_IN

PC15- (1)(2)
3 3 3 3 C12 5 5 B1 7 10 E1 I/O FT OSC32_EN, OSC_EN, TIM15_BKIN OSC32_OUT
OSC32_OUT

- - 4 4 C10 6 6 D3 8 11 E2 VBAT S - - - -

STM32G0C1xC/xE
- - 5 5 D11 7 7 D2 9 12 F2 VREF+ S - - - VREFBUF_OUT

4 4 6 6 D13 8 8 D1 10 13 F1 VDD/VDDA S - - - -

5 5 7 7 E12 9 9 E1 11 14 G1 VSS/VSSA S - - - -

- - 8 8 F13 10 10 F1 12 15 H1 PF0-OSC_IN I/O FT - CRS1_SYNC, EVENTOUT, TIM14_CH1 OSC_IN


Table 12. Pin assignment and description (continued)

STM32G0C1xC/xE
Pin number

LQFP32 / UFQFPN32 - GP

LQFP48 / UFQFPN48 - GP
LQFP32 / UFQFPN32 - N

LQFP48 / UFQFPN48 - N

I/O structure
Pin type
UFBGA64 - N
LQFP64 - GP
Alternate Additional

LQFP64 - N

Note
UFBGA100
WLCSP52
Pin name

LQFP100
LQFP80
functions functions

PF1-
- - 9 9 G12 11 11 G1 13 16 J1 I/O FT - OSC_EN, EVENTOUT, TIM15_CH1N OSC_OUT
OSC_OUT
(3)
6 6 10 10 F11 12 12 E2 14 17 G2 PF2-NRST I/O RST, FT MCO, LPUART2_TX, LPUART2_RTS_DE NRST

- - - - - - - - - 18 H3 PF3 I/O FT - LPUART2_RX, USART6_RTS_DE_CK -


DS13564 Rev 5

- - - - - - - - - 19 H2 PF4 I/O FT - LPUART1_TX -

- - - - - - - - - 20 J2 PF5 I/O FT - LPUART1_RX -

Pinouts, pin description and alternate functions


LPTIM1_IN1, LPUART1_RX, LPTIM2_IN1,
- - - - - 13 13 E3 15 21 K1 PC0 I/O FT_a - LPUART2_TX, USART6_TX, I2C3_SCL, COMP3_INM7
COMP3_OUT

LPTIM1_OUT, LPUART1_TX, TIM15_CH1,


- - - - - 14 14 F2 16 22 J3 PC1 I/O FT_a - COMP3_INP1
LPUART2_RX, USART6_RX, I2C3_SDA

LPTIM1_IN2, SPI2_MISO/I2S2_MCK, TIM15_CH2,


- - - - - 15 15 G2 17 23 K2 PC2 I/O FT - -
FDCAN2_RX, COMP3_OUT

LPTIM1_ETR, SPI2_MOSI/I2S2_SD, LPTIM2_ETR,


- - - - - 16 16 H1 18 24 L1 PC3 I/O FT - -
FDCAN2_TX

SPI2_SCK/I2S2_CK, USART2_CTS,
COMP1_INM8, ADC_IN0,
7 7 11 11 H13 17 17 H2 19 25 K3 PA0 I/O FT_a - TIM2_CH1_ETR, USART4_TX, LPTIM1_OUT,
TAMP_IN2, WKUP1
UCPD2_FRSTX, COMP1_OUT

SPI1_SCK/I2S1_CK, USART2_RTS_DE_CK,
8 8 12 12 E10 18 18 H3 20 26 L2 PA1 I/O FT_ea - TIM2_CH2, USART4_RX, TIM15_CH1N, COMP1_INP2, ADC_IN1
I2C1_SMBA, EVENTOUT

SPI1_MOSI/I2S1_SD, USART2_TX, TIM2_CH3,


COMP2_INM8, ADC_IN2,
9 9 13 13 E8 19 19 G3 21 27 M1 PA2 I/O FT_a - UCPD1_FRSTX, TIM15_CH1, LPUART1_TX,
WKUP4, LSCO
49/163

COMP2_OUT
Table 12. Pin assignment and description (continued)
50/163

Pinouts, pin description and alternate functions


Pin number

LQFP32 / UFQFPN32 - GP

LQFP48 / UFQFPN48 - GP
LQFP32 / UFQFPN32 - N

LQFP48 / UFQFPN48 - N

I/O structure
Pin type
UFBGA64 - N
LQFP64 - GP
Alternate Additional

LQFP64 - N

Note
UFBGA100
WLCSP52
Pin name

LQFP100
LQFP80
functions functions

SPI2_MISO/I2S2_MCK, USART2_RX, TIM2_CH4,


10 10 14 14 H11 20 20 F3 22 28 K4 PA3 I/O FT_ea - UCPD2_FRSTX, TIM15_CH2, LPUART1_RX, COMP2_INP2, ADC_IN3
EVENTOUT

SPI1_NSS/I2S1_WS, SPI2_MOSI/I2S2_SD,
ADC_IN4, DAC1_OUT1,
DS13564 Rev 5

- - 15 15 G10 21 21 H4 23 29 L3 PA4 I/O TT_a - USART6_TX, TIM14_CH1, LPTIM2_OUT,


RTC_OUT2
UCPD2_FRSTX, EVENTOUT, SPI3_NSS

SPI1_NSS/I2S1_WS, SPI2_MOSI/I2S2_SD, ADC_IN4, DAC1_OUT1,


11 11 - - - - - - - - - PA4 I/O TT_a - USART6_TX, TIM14_CH1, LPTIM2_OUT, TAMP_IN1, RTC_TS,
UCPD2_FRSTX, EVENTOUT, SPI3_NSS RTC_OUT1, WKUP2

SPI1_SCK/I2S1_CK, CEC, TIM2_CH1_ETR,


12 12 16 16 F9 22 22 G4 24 30 M2 PA5 I/O TT_ea - USART6_RX, USART3_TX, LPTIM2_ETR, ADC_IN5, DAC1_OUT2
UCPD1_FRSTX, EVENTOUT

SPI1_MISO/I2S1_MCK, TIM3_CH1, TIM1_BKIN,


USART6_CTS, USART3_CTS, TIM16_CH1,
13 13 17 17 F7 23 23 F4 25 31 M3 PA6 I/O FT_ea - ADC_IN6
LPUART1_CTS, COMP1_OUT, I2C2_SDA,
I2C3_SDA

SPI1_MOSI/I2S1_SD, TIM3_CH2, TIM1_CH1N,


USART6_RTS_DE_CK, TIM14_CH1, TIM17_CH1,
14 14 18 18 H9 24 24 E4 26 32 K5 PA7 I/O FT_a - ADC_IN7
UCPD1_FRSTX, COMP2_OUT, I2C2_SCL,
I2C3_SCL

STM32G0C1xC/xE
USART3_TX, USART1_TX, TIM2_CH1_ETR,
- - - - G8 25 25 H5 27 33 L4 PC4 I/O FT_a - COMP1_INM7, ADC_IN17
FDCAN1_RX

USART3_RX, USART1_RX, TIM2_CH2, COMP1_INP0, ADC_IN18,


- - - - G6 26 26 H6 28 34 M4 PC5 I/O FT_a -
FDCAN1_TX WKUP5
Table 12. Pin assignment and description (continued)

STM32G0C1xC/xE
Pin number

LQFP32 / UFQFPN32 - GP

LQFP48 / UFQFPN48 - GP
LQFP32 / UFQFPN32 - N

LQFP48 / UFQFPN48 - N

I/O structure
Pin type
UFBGA64 - N
LQFP64 - GP
Alternate Additional

LQFP64 - N

Note
UFBGA100
WLCSP52
Pin name

LQFP100
LQFP80
functions functions

SPI1_NSS/I2S1_WS, TIM3_CH3, TIM1_CH2N,


FDCAN2_RX, USART3_RX, LPTIM1_OUT,
15 15 19 19 H7 27 27 F5 29 35 L5 PB0 I/O FT_ea - COMP3_INP0, ADC_IN8
UCPD1_FRSTX, COMP1_OUT, USART5_TX,
LPUART2_CTS

TIM14_CH1, TIM3_CH4, TIM1_CH3N, FDCAN2_TX,


DS13564 Rev 5

USART3_RTS_DE_CK, LPTIM2_IN1,
16 16 20 20 H5 28 28 G5 30 36 M5 PB1 I/O FT_ea - COMP1_INM6, ADC_IN9
LPUART1_RTS_DE, COMP3_OUT, USART5_RX,
LPUART2_RTS_DE

Pinouts, pin description and alternate functions


SPI2_MISO/I2S2_MCK, MCO2, USART3_TX, COMP1_INP1,
17 - 21 21 G4 29 29 H7 31 37 L6 PB2 I/O FT_ea -
LPTIM1_OUT, EVENTOUT COMP3_INM6, ADC_IN10

- - - - - - - - - 38 M6 PF6 I/O FT - LPUART1_RTS_DE -

- - - - - - - - - 39 L7 PF7 I/O FT - LPUART1_CTS, USART5_CTS -

- - - - - - - - 32 40 M7 PE7 I/O FT_a - TIM1_ETR, USART5_RTS_DE_CK COMP3_INP2

- - - - - - - - 33 41 M8 PE8 I/O FT_a - USART4_TX, TIM1_CH1N COMP3_INM8

- - - - - - - - 34 42 K8 PE9 I/O FT - USART4_RX, TIM1_CH1 -

- - - - - - - - 35 43 L8 PE10 I/O FT - TIM1_CH2N, USART5_TX -

- - - - - - - - - 44 M9 PE11 I/O FT - TIM1_CH2, USART5_RX -

- - - - - - - - - 45 L9 PE12 I/O FT - SPI1_NSS/I2S1_WS, TIM1_CH3N -

- - - - - - - - - 46 M10 PE13 I/O FT - SPI1_SCK/I2S1_CK, TIM1_CH3 -

- - - - - - - - - 47 K9 PE14 I/O FT - SPI1_MISO/I2S1_MCK, TIM1_CH4, TIM1_BKIN2 -

- - - - - - - - - 48 L10 PE15 I/O FT - SPI1_MOSI/I2S1_SD, TIM1_BKIN -


51/163
Table 12. Pin assignment and description (continued)
52/163

Pinouts, pin description and alternate functions


Pin number

LQFP32 / UFQFPN32 - GP

LQFP48 / UFQFPN48 - GP
LQFP32 / UFQFPN32 - N

LQFP48 / UFQFPN48 - N

I/O structure
Pin type
UFBGA64 - N
LQFP64 - GP
Alternate Additional

LQFP64 - N

Note
UFBGA100
WLCSP52
Pin name

LQFP100
LQFP80
functions functions

CEC, LPUART1_RX, TIM2_CH3, USART3_TX,


- - 22 22 H3 30 30 G6 36 49 M11 PB10 I/O FT_fa - ADC_IN11
SPI2_SCK/I2S2_CK, I2C2_SCL, COMP1_OUT

SPI2_MOSI/I2S2_SD, LPUART1_TX, TIM2_CH4,


- - 23 23 F5 31 31 H8 37 50 L11 PB11 I/O FT_fa - ADC_IN15
USART3_RX, I2C2_SDA, COMP2_OUT
DS13564 Rev 5

SPI2_NSS/I2S2_WS, LPUART1_RTS_DE,
- - 24 24 E6 32 32 G7 38 51 K10 PB12 I/O FT_fa - TIM1_BKIN, FDCAN2_RX, TIM15_BKIN, ADC_IN16
UCPD2_FRSTX, EVENTOUT, I2C2_SMBA

SPI2_SCK/I2S2_CK, LPUART1_CTS, TIM1_CH1N,


- - 25 25 H1 33 33 G8 39 52 M12 PB13 I/O FT_fs - FDCAN2_TX, USART3_CTS, TIM15_CH1N, -
I2C2_SCL, EVENTOUT

SPI2_MISO/I2S2_MCK, UCPD1_FRSTX,
- - 26 26 G2 34 34 F6 40 53 K11 PB14 I/O FT_fs - TIM1_CH2N, USART3_RTS_DE_CK, TIM15_CH1, -
I2C2_SDA, EVENTOUT, USART6_RTS_DE_CK

(4) SPI2_MOSI/I2S2_SD, TIM1_CH3N, TIM15_CH1N,


- 17 27 27 F3 35 35 F7 41 54 J10 PB15 I/O FT_fcs UCPD1_CC2, RTC_REFIN
TIM15_CH2, EVENTOUT, USART6_CTS

MCO, SPI2_NSS/I2S2_WS, TIM1_CH1,


(4)
18 18 28 28 F1 36 36 F8 42 55 L12 PA8 I/O FT_fcs CRS1_SYNC, LPTIM2_OUT, EVENTOUT, UCPD1_CC1
I2C2_SMBA

STM32G0C1xC/xE
MCO, USART1_TX, TIM1_CH2,
(4)
19 19 29 29 E4 37 37 E6 43 56 H10 PA9 I/O FT_fds SPI2_MISO/I2S2_MCK, TIM15_BKIN, I2C1_SCL, UCPD1_DBCC1
EVENTOUT, I2C2_SCL

UCPD1_FRSTX, TIM3_CH1, TIM2_CH3,


20 - 30 - D5 38 38 E7 44 57 J11 PC6 I/O FT_s - -
LPUART2_TX

UCPD2_FRSTX, TIM3_CH2, TIM2_CH4,


- - 31 - D3 39 39 E5 45 58 K12 PC7 I/O FT_s - -
LPUART2_RX
Table 12. Pin assignment and description (continued)

STM32G0C1xC/xE
Pin number

LQFP32 / UFQFPN32 - GP

LQFP48 / UFQFPN48 - GP
LQFP32 / UFQFPN32 - N

LQFP48 / UFQFPN48 - N

I/O structure
Pin type
UFBGA64 - N
LQFP64 - GP
Alternate Additional

LQFP64 - N

Note
UFBGA100
WLCSP52
Pin name

LQFP100
LQFP80
functions functions

- - - - - 40 - - 46 59 J12 PD8 I/O FT_s - USART3_TX, SPI1_SCK/I2S1_CK, LPTIM1_OUT -

- - - - - 41 - - 47 60 H11 PD9 I/O FT_s - USART3_RX, SPI1_NSS/I2S1_WS, TIM1_BKIN2 -

- - - - - - - - 48 61 H12 PD10 I/O FT_s - MCO -


DS13564 Rev 5

- - - - - - - - 49 62 G11 PD11 I/O FT_s - USART3_CTS, LPTIM2_ETR -

- - - 30 E2 - 40 E8 50 63 G12 VSS S - - - -

Pinouts, pin description and alternate functions


- 20 - 31 D1 - 41 D8 51 64 F12 VDDIO2 S - - - -

USART3_RTS_DE_CK, LPTIM2_IN1, TIM4_CH1,


- - - - - - - - 52 65 F11 PD12 I/O FT_s - -
FDCAN1_RX

- - - - - - - - 53 66 E12 PD13 I/O FT_s - LPTIM2_OUT, TIM4_CH2, FDCAN1_TX -

- - - - - - - - 54 67 E11 PD14 I/O FT_s - LPUART2_CTS, TIM4_CH3, FDCAN2_RX -

CRS1_SYNC, LPUART2_RTS_DE, TIM4_CH4,


- - - - - - - - 55 68 D11 PD15 I/O FT_s - -
FDCAN2_TX

SPI2_MOSI/I2S2_SD, USART1_RX, TIM1_CH3,


(4)
21 21 32 32 C4 42 42 D6 56 69 E10 PA10 I/O FT_fds MCO2, TIM17_BKIN, I2C1_SDA, EVENTOUT, UCPD1_DBCC2
I2C2_SDA

SPI1_MISO/I2S1_MCK, USART1_CTS, TIM1_CH4,


(5)
22 22 33 33 C2 43 43 C8 57 70 D12 PA11 [PA9] I/O FT_fus FDCAN1_RX, TIM1_BKIN2, I2C2_SCL, USB_DM
COMP1_OUT

SPI1_MOSI/I2S1_SD, USART1_RTS_DE_CK,
(5)
23 23 34 34 B1 44 44 B8 58 71 C12 PA12 [PA10] I/O FT_fus TIM1_ETR, FDCAN1_TX, I2S_CKIN, I2C2_SDA, USB_DP
COMP2_OUT

- - - - - - - - - 72 D10 PF8 I/O FT_s - - -


53/163
Table 12. Pin assignment and description (continued)
54/163

Pinouts, pin description and alternate functions


Pin number

LQFP32 / UFQFPN32 - GP

LQFP48 / UFQFPN48 - GP
LQFP32 / UFQFPN32 - N

LQFP48 / UFQFPN48 - N

I/O structure
Pin type
UFBGA64 - N
LQFP64 - GP
Alternate Additional

LQFP64 - N

Note
UFBGA100
WLCSP52
Pin name

LQFP100
LQFP80
functions functions

(6) SWDIO, IR_OUT, USB_NOE, EVENTOUT,


24 24 35 35 B3 45 45 D7 59 73 C11 PA13 I/O FT_es -
LPUART2_RX
(6)
25 25 36 36 B5 46 46 C7 60 74 B12 PA14-BOOT0 I/O FT_s SWCLK, USART2_TX, EVENTOUT, LPUART2_TX BOOT0

SPI1_NSS/I2S1_WS, USART2_RX,
DS13564 Rev 5

TIM2_CH1_ETR, MCO2, USART4_RTS_DE_CK,


26 - 37 37 A2 47 47 C6 61 75 B11 PA15 I/O FT_s - -
USART3_RTS_DE_CK, USB_NOE, EVENTOUT,
I2C2_SMBA, SPI3_NSS

UCPD2_FRSTX, TIM3_CH3, TIM1_CH1,


- - - - - 48 48 A8 62 76 C10 PC8 I/O FT_s - -
LPUART2_CTS

I2S_CKIN, TIM3_CH4, TIM1_CH2,


- - - - - 49 49 B7 63 77 A12 PC9 I/O FT_s - -
LPUART2_RTS_DE, USB_NOE

(4) EVENTOUT, SPI2_NSS/I2S2_WS, TIM16_CH1,


- 26 38 38 A4 50 50 A7 64 78 B10 PD0 I/O FT_cs UCPD2_CC1
FDCAN1_RX

(4) EVENTOUT, SPI2_SCK/I2S2_CK, TIM17_CH1,


- 27 39 39 C6 51 51 B6 65 79 C9 PD1 I/O FT_ds UCPD2_DBCC1
FDCAN1_TX

(4) USART3_RTS_DE_CK, TIM3_ETR, TIM1_CH1N,


- 28 40 40 B7 52 52 A6 66 80 A11 PD2 I/O FT_cs UCPD2_CC2
USART5_RX

(4) USART2_CTS, SPI2_MISO/I2S2_MCK,


- 29 41 41 A6 53 53 D5 67 81 C8 PD3 I/O FT_ds UCPD2_DBCC2
TIM1_CH2N, USART5_TX

STM32G0C1xC/xE
USART2_RTS_DE_CK, SPI2_MOSI/I2S2_SD,
- - - - - 54 54 C5 68 82 B9 PD4 I/O FT_s - -
TIM1_CH3N, USART5_RTS_DE_CK

USART2_TX, SPI1_MISO/I2S1_MCK, TIM1_BKIN,


- - - - - 55 55 B5 69 83 A10 PD5 I/O FT - -
USART5_CTS

- - - - - 56 56 A5 70 84 A9 PD6 I/O FT - USART2_RX, SPI1_MOSI/I2S1_SD, LPTIM2_OUT -


Table 12. Pin assignment and description (continued)

STM32G0C1xC/xE
Pin number

LQFP32 / UFQFPN32 - GP

LQFP48 / UFQFPN48 - GP
LQFP32 / UFQFPN32 - N

LQFP48 / UFQFPN48 - N

I/O structure
Pin type
UFBGA64 - N
LQFP64 - GP
Alternate Additional

LQFP64 - N

Note
UFBGA100
WLCSP52
Pin name

LQFP100
LQFP80
functions functions

- - - - - - - - 71 85 B8 PD7 I/O FT - MCO2 -

- - - - - - - - - 86 A8 PF9 I/O FT - USART6_TX -

- - - - - - - - - 87 B7 PF10 I/O FT - USART6_RX -


DS13564 Rev 5

- - - - - - - - - 88 A7 PF11 I/O FT - USART6_RTS_DE_CK -

- - - - - - - - - 89 B6 PF12 I/O FT - TIM15_CH1, USART6_CTS -

Pinouts, pin description and alternate functions


- - - - - - - - - 90 A6 PF13 I/O FT - TIM15_CH2 -

SPI1_SCK/I2S1_CK, TIM1_CH2, TIM2_CH2,


27 - 42 42 A8 57 57 B4 72 91 A5 PB3 I/O FT_a - USART5_TX, USART1_RTS_DE_CK, I2C3_SCL, COMP2_INM6
EVENTOUT, I2C2_SCL, SPI3_SCK

SPI1_MISO/I2S1_MCK, TIM3_CH1, USART5_RX,


28 - 43 43 B9 58 58 C4 73 92 B5 PB4 I/O FT_a - USART1_CTS, TIM17_BKIN, I2C3_SDA, COMP2_INP0
EVENTOUT, I2C2_SDA, SPI3_MISO

SPI1_MOSI/I2S1_SD, TIM3_CH2, TIM16_BKIN,


29 - 44 44 A10 59 59 D4 74 93 C5 PB5 I/O FT - FDCAN2_RX, LPTIM1_IN1, I2C1_SMBA, WKUP6
COMP2_OUT, USART5_RTS_DE_CK, SPI3_MOSI

- - - - - - - - 75 94 A4 PE0 I/O FT - TIM16_CH1, EVENTOUT, TIM4_ETR -

- - - - - - - - 76 95 B4 PE1 I/O FT - TIM17_CH1, EVENTOUT -

- - - - - - - - - 96 A3 PE2 I/O FT - TIM3_ETR -

- - - - - - - - 77 97 A2 PE3 I/O FT - TIM3_CH1 -


55/163
Table 12. Pin assignment and description (continued)
56/163

Pinouts, pin description and alternate functions


Pin number

LQFP32 / UFQFPN32 - GP

LQFP48 / UFQFPN48 - GP
LQFP32 / UFQFPN32 - N

LQFP48 / UFQFPN48 - N

I/O structure
Pin type
UFBGA64 - N
LQFP64 - GP
Alternate Additional

LQFP64 - N

Note
UFBGA100
WLCSP52
Pin name

LQFP100
LQFP80
functions functions

USART1_TX, TIM1_CH3, TIM16_CH1N,


FDCAN2_TX, SPI2_MISO/I2S2_MCK, LPTIM1_ETR,
30 30 45 45 C8 60 60 A4 78 98 C4 PB6 I/O FT_fa - COMP2_INP1
I2C1_SCL, EVENTOUT, USART5_CTS, TIM4_CH1,
LPUART2_TX
DS13564 Rev 5

USART1_RX, SPI2_MOSI/I2S2_SD, TIM17_CH1N,


31 31 46 46 D7 61 61 A3 79 99 B3 PB7 I/O FT_fa - USART4_CTS, LPTIM1_IN2, I2C1_SDA, COMP2_INM7, PVD_IN
EVENTOUT, TIM4_CH2, LPUART2_RX

CEC, SPI2_SCK/I2S2_CK, TIM16_CH1,


32 32 47 47 A12 62 62 B3 80 100 A1 PB8 I/O FT_f - FDCAN1_RX, USART3_TX, TIM15_BKIN, -
I2C1_SCL, EVENTOUT, USART6_TX, TIM4_CH3

IR_OUT, UCPD2_FRSTX, TIM17_CH1,


1 1 48 48 D9 63 63 C3 1 1 C3 PB9 I/O FT_f - FDCAN1_TX, USART3_RX, SPI2_NSS/I2S2_WS, -
I2C1_SDA, EVENTOUT, USART6_RX, TIM4_CH4

1. PC13, PC14 and PC15 are supplied through the power switch. Since the switch only provides a limited amount of current (3 mA), the use of GPIOs PC13 to PC15 in output
mode is limited:
- The speed should not exceed 2 MHz with a maximum load of 30 pF
- These GPIOs can be used as current sinks but not as current sources.
2. After an RTC domain power-up, PC13, PC14 and PC15 operate as GPIOs. Their function then depends on the content of the RTC registers. The RTC registers are not reset
upon system reset. For details on how to manage these GPIOs, refer to the RTC domain and RTC register descriptions in the RM0444 reference manual.
3. RST I/O structure when the PF2-NRST pin is configured as reset (input or input/output mode), FT I/O structure when the PF2-NRST pin is configured as GPIO.

STM32G0C1xC/xE
4. Upon reset, a pull-down resistor might be present on PA8, PB15, PD0, or PD2 depending on voltage level on PA9,PA10, PD1, and PD3, respectively. In order to disable this
resistor, strobe the UCPDx_STROBE bits in SYSCFG_CFGR1 register during start-up sequence.
5. Pins PA9/PA10 can be remapped in place of pins PA11/PA12 (default mapping), using SYSCFG_CFGR1 register.
6. Upon reset, these pins are configured as SW debug alternate functions, and the internal pull-up on PA13 pin and the internal pull-down on PA14 pin are activated.
Table 13. Port A alternate function mapping (AF0 to AF7)

STM32G0C1xC/xE
Port AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

SPI2_SCK/
PA0 USART2_CTS TIM2_CH1_ETR - USART4_TX LPTIM1_OUT UCPD2_FRSTX COMP1_OUT
I2S2_CK
SPI1_SCK/ USART2_RTS
PA1 TIM2_CH2 - USART4_RX TIM15_CH1N I2C1_SMBA EVENTOUT
I2S1_CK _DE_CK
SPI1_MOSI/
PA2 USART2_TX TIM2_CH3 - UCPD1_FRSTX TIM15_CH1 LPUART1_TX COMP2_OUT
I2S1_SD
SPI2_MISO/
PA3 USART2_RX TIM2_CH4 - UCPD2_FRSTX TIM15_CH2 LPUART1_RX EVENTOUT
I2S2_MCK
SPI1_NSS/ SPI2_MOSI/
PA4 - USART6_TX TIM14_CH1 LPTIM2_OUT UCPD2_FRSTX EVENTOUT
I2S1_WS I2S2_SD
SPI1_SCK/
PA5 CEC TIM2_CH1_ETR USART6_RX USART3_TX LPTIM2_ETR UCPD1_FRSTX EVENTOUT
I2S1_CK
DS13564 Rev 5

SPI1_MISO/
PA6 TIM3_CH1 TIM1_BKIN USART6_CTS USART3_CTS TIM16_CH1 LPUART1_CTS COMP1_OUT
I2S1_MCK
SPI1_MOSI/ USART6_RTS
PA7 TIM3_CH2 TIM1_CH1N TIM14_CH1 TIM17_CH1 UCPD1_FRSTX COMP2_OUT
I2S1_SD _DE_CK
SPI2_NSS/
PA8 MCO TIM1_CH1 - CRS1_SYNC LPTIM2_OUT - EVENTOUT
I2S2_WS
SPI2_MISO/
PA9 MCO USART1_TX TIM1_CH2 - TIM15_BKIN I2C1_SCL EVENTOUT
I2S2_MCK
SPI2_MOSI/
PA10 USART1_RX TIM1_CH3 MCO2 - TIM17_BKIN I2C1_SDA EVENTOUT
I2S2_SD
SPI1_MISO/
PA11 USART1_CTS TIM1_CH4 FDCAN1_RX - TIM1_BKIN2 I2C2_SCL COMP1_OUT
I2S1_MCK
SPI1_MOSI/ USART1_RTS
PA12 TIM1_ETR FDCAN1_TX - I2S_CKIN I2C2_SDA COMP2_OUT
I2S1_SD _DE_CK
PA13 SWDIO IR_OUT USB_NOE - - - - EVENTOUT
PA14 SWCLK USART2_TX - - - - - EVENTOUT
SPI1_NSS/ USART4_RTS USART3_RTS
PA15 USART2_RX TIM2_CH1_ETR MCO2 USB_NOE EVENTOUT
I2S1_WS _DE_CK _DE_CK
57/163
Table 14. Port A alternate function mapping (AF8 to AF15)
58/163 Port AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

PA0 - - - - - - - -
PA1 - - - - - - - -
PA2 - - - - - - - -
PA3 - - - - - - - -
PA4 - SPI3_NSS - - - - - -
PA5 - - - - - - - -
PA6 I2C2_SDA I2C3_SDA - - - - - -
PA7 I2C2_SCL I2C3_SCL - - - - - -
PA8 I2C2_SMBA - - - - - - -
PA9 I2C2_SCL - - - - - - -
DS13564 Rev 5

PA10 I2C2_SDA - - - - - - -
PA11 - - - - - - - -
PA12 - - - - - - - -
PA13 - - LPUART2_RX - - - - -
PA14 - - LPUART2_TX - - - - -
PA15 I2C2_SMBA SPI3_NSS - - - - - -

STM32G0C1xC/xE
Table 15. Port B alternate function mapping (AF0 to AF7)

STM32G0C1xC/xE
Port AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

SPI1_NSS/
PB0 TIM3_CH3 TIM1_CH2N FDCAN2_RX USART3_RX LPTIM1_OUT UCPD1_FRSTX COMP1_OUT
I2S1_WS
USART3_RTS LPUART1_RTS
PB1 TIM14_CH1 TIM3_CH4 TIM1_CH3N FDCAN2_TX LPTIM2_IN1 COMP3_OUT
_DE_CK _DE
SPI2_MISO/
PB2 - - MCO2 USART3_TX LPTIM1_OUT - EVENTOUT
I2S2_MCK
SPI1_SCK/ USART1_RTS
PB3 TIM1_CH2 TIM2_CH2 USART5_TX - I2C3_SCL EVENTOUT
I2S1_CK _DE_CK
SPI1_MISO/
PB4 TIM3_CH1 - USART5_RX USART1_CTS TIM17_BKIN I2C3_SDA EVENTOUT
I2S1_MCK
SPI1_MOSI/
PB5 TIM3_CH2 TIM16_BKIN FDCAN2_RX - LPTIM1_IN1 I2C1_SMBA COMP2_OUT
I2S1_SD
DS13564 Rev 5

SPI2_MISO/
PB6 USART1_TX TIM1_CH3 TIM16_CH1N FDCAN2_TX LPTIM1_ETR I2C1_SCL EVENTOUT
I2S2_MCK
SPI2_MOSI/
PB7 USART1_RX TIM17_CH1N - USART4_CTS LPTIM1_IN2 I2C1_SDA EVENTOUT
I2S2_SD
SPI2_SCK/
PB8 CEC TIM16_CH1 FDCAN1_RX USART3_TX TIM15_BKIN I2C1_SCL EVENTOUT
I2S2_CK
SPI2_NSS/
PB9 IR_OUT UCPD2_FRSTX TIM17_CH1 FDCAN1_TX USART3_RX I2C1_SDA EVENTOUT
I2S2_WS
SPI2_SCK/
PB10 CEC LPUART1_RX TIM2_CH3 - USART3_TX I2C2_SCL COMP1_OUT
I2S2_CK
SPI2_MOSI/
PB11 LPUART1_TX TIM2_CH4 - USART3_RX - I2C2_SDA COMP2_OUT
I2S2_SD
SPI2_NSS/ LPUART1_RTS
PB12 TIM1_BKIN FDCAN2_RX - TIM15_BKIN UCPD2_FRSTX EVENTOUT
I2S2_WS _DE
SPI2_SCK/
PB13 LPUART1_CTS TIM1_CH1N FDCAN2_TX USART3_CTS TIM15_CH1N I2C2_SCL EVENTOUT
I2S2_CK
59/163
Table 15. Port B alternate function mapping (AF0 to AF7) (continued)
60/163 Port AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

SPI2_MISO/ USART3_RTS
PB14 UCPD1_FRSTX TIM1_CH2N - TIM15_CH1 I2C2_SDA EVENTOUT
I2S2_MCK _DE_CK
SPI2_MOSI/
PB15 - TIM1_CH3N - TIM15_CH1N TIM15_CH2 - EVENTOUT
I2S2_SD

Table 16. Port B alternate function mapping (AF8 to AF15)


Port AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

PB0 USART5_TX - LPUART2_CTS - - - - -


LPUART2_RTS
PB1 USART5_RX - - - - - -
_DE
PB2 - - - - - - - -
DS13564 Rev 5

PB3 I2C2_SCL SPI3_SCK - - - - - -


PB4 I2C2_SDA SPI3_MISO - - - - - -
USART5_RTS
PB5 SPI3_MOSI - - - - - -
_DE_CK
PB6 USART5_CTS TIM4_CH1 LPUART2_TX - - - - -
PB7 - TIM4_CH2 LPUART2_RX - - - - -
PB8 USART6_TX TIM4_CH3 - - - - - -
PB9 USART6_RX TIM4_CH4 - - - - - -
PB10 - - - - - - - -
PB11 - - - - - - - -
PB12 I2C2_SMBA - - - - - - -

STM32G0C1xC/xE
PB13 - - - - - - - -
USART6_RTS
PB14 - - - - - - -
_DE_CK
PB15 USART6_CTS - - - - - - -
Table 17. Port C alternate function mapping

STM32G0C1xC/xE
Port AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

PC0 LPTIM1_IN1 LPUART1_RX LPTIM2_IN1 LPUART2_TX USART6_TX - I2C3_SCL COMP3_OUT


PC1 LPTIM1_OUT LPUART1_TX TIM15_CH1 LPUART2_RX USART6_RX - I2C3_SDA -
SPI2_MISO/
PC2 LPTIM1_IN2 TIM15_CH2 FDCAN2_RX - - - COMP3_OUT
I2S2_MCK
SPI2_MOSI/
PC3 LPTIM1_ETR LPTIM2_ETR FDCAN2_TX - - - -
I2S2_SD
PC4 USART3_TX USART1_TX TIM2_CH1_ETR FDCAN1_RX - - - -
PC5 USART3_RX USART1_RX TIM2_CH2 FDCAN1_TX - - - -
PC6 UCPD1_FRSTX TIM3_CH1 TIM2_CH3 LPUART2_TX - - - -
PC7 UCPD2_FRSTX TIM3_CH2 TIM2_CH4 LPUART2_RX - - - -
PC8 UCPD2_FRSTX TIM3_CH3 TIM1_CH1 LPUART2_CTS - - - -
DS13564 Rev 5

LPUART2_RTS_
PC9 I2S_CKIN TIM3_CH4 TIM1_CH2 - - USB_NOE -
DE
PC10 USART3_TX USART4_TX TIM1_CH3 - SPI3_SCK - - -
PC11 USART3_RX USART4_RX TIM1_CH4 - SPI3_MISO - - -
PC12 LPTIM1_IN1 UCPD1_FRSTX TIM14_CH1 USART5_TX SPI3_MOSI - - -
PC13 - - TIM1_BKIN - - - - -
PC14 - - TIM1_BKIN2 - - - - -
PC15 OSC32_EN OSC_EN TIM15_BKIN - - - - -
61/163
*

Table 18. Port D alternate function mapping


62/163 Port AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

SPI2_NSS/
PD0 EVENTOUT TIM16_CH1 FDCAN1_RX - - - -
I2S2_WS
SPI2_SCK/
PD1 EVENTOUT TIM17_CH1 FDCAN1_TX - - - -
I2S2_CK
USART3_RTS
PD2 TIM3_ETR TIM1_CH1N USART5_RX - - - -
_DE_CK
SPI2_MISO/
PD3 USART2_CTS TIM1_CH2N USART5_TX - - - -
I2S2_MCK
USART2_RTS SPI2_MOSI/ USART5_RTS
PD4 TIM1_CH3N - - - -
_DE_CK I2S2_SD _DE_CK
SPI1_MISO/
PD5 USART2_TX TIM1_BKIN USART5_CTS - - - -
I2S1_MCK
DS13564 Rev 5

SPI1_MOSI/
PD6 USART2_RX LPTIM2_OUT - - - - -
I2S1_SD
PD7 - - - MCO2 - - - -
SPI1_SCK/
PD8 USART3_TX LPTIM1_OUT - - - - -
I2S1_CK
SPI1_NSS/
PD9 USART3_RX TIM1_BKIN2 - - - - -
I2S1_WS
PD10 MCO - - - - - - -
PD11 USART3_CTS LPTIM2_ETR - - - - - -
USART3_RTS
PD12 LPTIM2_IN1 TIM4_CH1 FDCAN1_RX - - - -
_DE_CK
PD13 - LPTIM2_OUT TIM4_CH2 FDCAN1_TX - - - -
PD14 - LPUART2_CTS TIM4_CH3 FDCAN2_RX - - - -

STM32G0C1xC/xE
LPUART2_RTS
PD15 CRS1_SYNC TIM4_CH4 FDCAN2_TX - - - -
_DE
Table 19. Port E alternate function mapping

STM32G0C1xC/xE
Port AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

PE0 TIM16_CH1 EVENTOUT TIM4_ETR - - - - -


PE1 TIM17_CH1 EVENTOUT - - - - - -
PE2 - TIM3_ETR - - - - - -
PE3 - TIM3_CH1 - - - - - -
PE4 - TIM3_CH2 - - - - - -
PE5 - TIM3_CH3 - - - - - -
PE6 - TIM3_CH4 - - - - - -
USART5_RTS_D
PE7 - TIM1_ETR - - - - -
E_CK
PE8 USART4_TX TIM1_CH1N - - - - - -
PE9 USART4_RX TIM1_CH1 - - - - - -
DS13564 Rev 5

PE10 - TIM1_CH2N - USART5_TX - - - -


PE11 - TIM1_CH2 - USART5_RX - - - -
SPI1_NSS/
PE12 TIM1_CH3N - - - - - -
I2S1_WS
SPI1_SCK/
PE13 TIM1_CH3 - - - - - -
I2S1_CK
SPI1_MISO/I2S1
PE14 TIM1_CH4 TIM1_BK2 - - - - -
_MCK
SPI1_MOSI/I2S1
PE15 TIM1_BK - - - - - -
_SD
63/163
Table 20. Port F alternate function mapping
64/163 Port AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

PF0 CRS1_SYNC EVENTOUT TIM14_CH1 - - - - -


PF1 OSC_EN EVENTOUT TIM15_CH1N - - - - -
LPUART2_RTS
PF2 MCO LPUART2_TX - - - - -
_DE
USART6_RTS
PF3 - LPUART2_RX - - - - -
_DE_CK
PF4 - LPUART1_TX - - - - - -
PF5 - LPUART1_RX - - - - - -
LPUART1_RTS
PF6 - - - - - - -
_DE
PF7 - LPUART1_CTS - USART5_CTS - - - -
DS13564 Rev 5

PF8 - - - - - - - -
PF9 - - - USART6_TX - - - -
PF10 - - - USART6_RX - - - -
USART6_RTS
PF11 - - - - - - -
_DE_CK
PF12 TIM15_CH1 - - USART6_CTS - - - -
PF13 TIM15_CH2 - - - - - - -

STM32G0C1xC/xE
STM32G0C1xC/xE Electrical characteristics

5 Electrical characteristics

5.1 Parameter conditions


Unless otherwise specified, all voltages are referenced to VSS.
Parameter values defined at temperatures or in temperature ranges out of the ordering
information scope are to be ignored.
Packages used for characterizing certain electrical parameters may differ from the
commercial packages as per the ordering information.

5.1.1 Minimum and maximum values


Unless otherwise specified, the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at TA = 25 °C and TA = TA(max) (given by
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean ±3σ).

5.1.2 Typical values


Unless otherwise specified, typical data are based on TA = 25 °C, VDD = VDDA = VDDIO2 = 3
V. They are given only as design guidelines and are not tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean ±2σ).

5.1.3 Typical curves


Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.

5.1.4 Loading capacitor


The loading conditions used for pin parameter measurement are shown in Figure 13.

5.1.5 Pin input voltage


The input voltage measurement on a pin of the device is described in Figure 14.

Figure 13. Pin loading conditions Figure 14. Pin input voltage

MCU pin MCU pin

C = 50 pF VIN

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124
Electrical characteristics STM32G0C1xC/xE

5.1.6 Power supply scheme

Figure 15. Power supply scheme

VBAT

Backup circuitry
1.55 V to 3.6 V (LSE, RTC and
Power backup registers)
switch

VDD VCORE
VDD/VDDA VDD
Regulator

VDDIO1
OUT

Level shifter
100 nF IO
GPIOs
+ 4.7 μF IN
logic
Kernel logic
VSS (CPU, digital and
memories)
VDDIO2
VDDIO2(1) VDDIO2
OUT

Level shifter
IO
GPIOs
100 nF IN
logic
+ 4.7 μF VSS(2) VSS
VREF VDDA
VREF+(3)
VREF+ ADC
DAC
100 nF VREF- COMPs
+ 1 μF(4) VREFBUF
VSSA
VSS/VSSA
(1) Internally connected to VDD in devices without the VDDIO2 pin
(2) Internally connected to VSS in devices without the VSS pin
(3) Internally connected to VDDA in devices without the VREF+ pin
(4) Only required when VREFBUF is used MSv66839V3

Caution: Power supply pin pair (VDD/VDDA and VSS/VSSA, VDDIO2 and VSS) must be decoupled
with filtering ceramic capacitors as shown above. These capacitors must be placed as close
as possible to, or below, the appropriate pins on the underside of the PCB to ensure the
good functionality of the device.

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STM32G0C1xC/xE Electrical characteristics

5.1.7 Current consumption measurement

Figure 16. Current consumption measurement scheme

IDDVBAT
VBAT
VBAT

IDD
VDD VDD/VDDA
(VDDA)
VDDIO2

MSv66840V1

5.2 Absolute maximum ratings


Stresses above the absolute maximum ratings listed in Table 21, Table 22 and Table 23
may cause permanent damage to the device. These are stress ratings only and functional
operation of the device at these conditions is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability. The device mission profile
(application conditions) is compliant with the JEDEC JESD47 qualification standard.
All voltages are defined with respect to VSS.

Table 21. Voltage characteristics


Symbol Ratings Min Max Unit

VDD External supply voltage -0.3 4.0 V


VDDIO2 External supply voltage for selected I/Os -0.3 4.0 V
VBAT External supply voltage on VBAT pin -0.3 4.0 V
VREF+ External voltage on VREF+ pin -0.3 Min(VDD + 0.4, 4.0) V
Input voltage on FT_xx pins except FT_c and FT_s -0.3 VDD + 4.0(2)(3)
Input voltage on FT_s pins except FT_cs -0.3 VDDIO2 + 4.0(2)
VIN(1) V
Input voltage on FT_c pins -0.3 5.5
Input voltage on any other pin -0.3 4.0
1. Refer to Table 22 for the maximum allowed injected current values.
2. To sustain a voltage higher than 4 V the internal pull-up/pull-down resistors must be disabled.
3. When an FT_a pin is used by an analog peripheral such as ADC, the maximum VIN is 4 V.

Table 22. Current characteristics


Symbol Ratings Max Unit

IVDD/VDDA
Current into VDD/VDDA and VDDIO2 power pins (source)(1) 100 mA
,VDDIO2

IVSS/VSSA,VSS Current out of VSS/VSSA and VSS ground pins (sink)(1) 100 mA

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124
Electrical characteristics STM32G0C1xC/xE

Table 22. Current characteristics (continued)


Symbol Ratings Max Unit

Output current sunk by any I/O and control pin except FT_f 15
IIO(PIN) Output current sunk by any FT_f pin 20 mA
Output current sourced by any I/O and control pin 15
Total output current sunk by sum of all I/Os and control pins 80
∑IIO(PIN) mA
Total output current sourced by sum of all I/Os and control pins 80
Injected current on a FT_xx pin -5 / NA(3)
IINJ(PIN)(2) mA
Injected current on a TT_a pin(4) -5 / 0
∑|IINJ(PIN)| Total injected current (sum of all I/Os and control pins)(5) 25 mA
1. All main power (VDD/VDDA, VDDIO2, VBAT) and ground (VSS/VSSA, VSS) pins must always be connected to the
external power supplies, in the permitted range.
2. A positive injection is induced by VIN > VDDIOx while a negative injection is induced by VIN < VSS. IINJ(PIN) must never be
exceeded. Refer also to Table 21: Voltage characteristics for the maximum allowed input voltage values.
3. Positive injection is not possible on these I/Os and does not occur for input voltages lower than the specified maximum
value.
4. On these I/Os, any current injection disturbs the analog performances of the device.
5. When several inputs are submitted to a current injection, the maximum ∑|IINJ(PIN)| is the absolute sum of the negative
injected currents (instantaneous values).

Table 23. Thermal characteristics


Symbol Ratings Value Unit

TSTG Storage temperature range -65 to +150 °C


TJ Maximum junction temperature 150 °C

5.3 Operating conditions

5.3.1 General operating conditions

Table 24. General operating conditions


Symbol Parameter Conditions Min Max Unit

fHCLK Internal AHB clock frequency - 0 64


MHz
fPCLK Internal APB clock frequency - 0 64
VDD Standard operating voltage - 1.7(1) 3.6 V
External supply voltage for
VDDIO2 - 1.65 3.6 V
selected I/Os
For ADC and COMP
1.62 3.6
operation
VDDA Analog supply voltage V
For DAC operation 1.8 3.6
For VREFBUF operation 2.4 3.6
VBAT Backup operating voltage - 1.55 3.6 V

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STM32G0C1xC/xE Electrical characteristics

Table 24. General operating conditions (continued)


Symbol Parameter Conditions Min Max Unit

All except RST, TT_xx and


-0.3 Min(VDD + 3.6, 5.5)(2)
FT_c

VIN I/O input voltage RST -0.3 VDD + 0.3 V


TT_xx -0.3 VDDA + 0.3
FT_c -0.3 5.0(2)
Suffix 6(4) -40 85
(3) (4)
TA Ambient temperature Suffix 7 -40 105 °C
Suffix 3(4) -40 125
Suffix 6(4) -40 105
TJ (4)
Junction temperature Suffix 7 -40 125 °C
Suffix 3(4) -40 130
1. When RESET is released functionality is guaranteed down to VPDR min.
2. For operation with voltage higher than VDD +0.3 V, the internal pull-up and pull-down resistors must be disabled.
3. The TA(max) applies to PD(max). At PD < PD(max) the ambient temperature is allowed to go higher than TA(max) provided
that the junction temperature TJ does not exceed TJ(max). Refer to Section 6.13: Thermal characteristics.
4. Temperature range digit in the order code. See Section 7: Ordering information.

5.3.2 Operating conditions at power-up / power-down


The parameters given in Table 25 are derived from tests performed under the ambient
temperature condition summarized in Table 24.

Table 25. Operating conditions at power-up / power-down


Symbol Parameter Conditions Min Max Unit

VDD rising - ∞
µs/V
tVDD VDD slew rate VDD falling; ULPEN = 0 10 ∞
VDD falling; ULPEN = 1 100 ∞ ms/V

5.3.3 Embedded reset and power control block characteristics


The parameters given in Table 26 are derived from tests performed under the ambient
temperature conditions summarized in Table 24: General operating conditions.

Table 26. Embedded reset and power control block characteristics


Symbol Parameter Conditions(1) Min Typ Max Unit

tRSTTEMPO(2) POR temporization when VDD crosses VPOR VDD rising - 250 400 μs
VPOR (2) Power-on reset threshold - 1.62 1.66 1.70 V
VPDR(2) Power-down reset threshold - 1.60 1.64 1.69 V
VDD rising 2.05 2.10 2.18
VBOR1 Brownout reset threshold 1 V
VDD falling 1.95 2.00 2.08

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124
Electrical characteristics STM32G0C1xC/xE

Table 26. Embedded reset and power control block characteristics (continued)
Symbol Parameter Conditions(1) Min Typ Max Unit

VDD rising 2.20 2.31 2.38


VBOR2 Brownout reset threshold 2 V
VDD falling 2.10 2.21 2.28
VDD rising 2.50 2.62 2.68
VBOR3 Brownout reset threshold 3 V
VDD falling 2.40 2.52 2.58
VDD rising 2.80 2.91 3.00
VBOR4 Brownout reset threshold 4 V
VDD falling 2.70 2.81 2.90
VDD rising 2.05 2.15 2.22
VPVD0 Programmable voltage detector threshold 0 V
VDD falling 1.95 2.05 2.12
VDD rising 2.20 2.30 2.37
VPVD1 PVD threshold 1 V
VDD falling 2.10 2.20 2.27
VDD rising 2.35 2.46 2.54
VPVD2 PVD threshold 2 V
VDD falling 2.25 2.36 2.44
VDD rising 2.50 2.62 2.70
VPVD3 PVD threshold 3 V
VDD falling 2.40 2.52 2.60
VDD rising 2.65 2.74 2.87
VPVD4 PVD threshold 4 V
VDD falling 2.55 2.64 2.77
VDD rising 2.80 2.91 3.03
VPVD5 PVD threshold 5 V
VDD falling 2.70 2.81 2.93
VDD rising 2.90 3.01 3.14
VPVD6 PVD threshold 6 V
VDD falling 2.80 2.91 3.04
Hysteresis in
continuous - 20 -
Vhyst_POR_PDR Hysteresis of VPOR and VPDR mode mV
Hysteresis in
- 30 -
other mode
Vhyst_BOR_PVD Hysteresis of VBORx and VPVDx - - 100 - mV
IDD(BOR_PVD)(2) BOR and PVD consumption - - 1.1 1.6 µA
1. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power sleep modes.
2. Specified by design. Not tested in production.

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STM32G0C1xC/xE Electrical characteristics

5.3.4 Embedded voltage reference


The parameters given in Table 27 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 24: General operating
conditions.

Table 27. Embedded internal voltage reference


Symbol Parameter Conditions Min Typ Max Unit

VREFINT Internal reference voltage -40°C < TJ < 130°C 1.182 1.212 1.232 V
ADC sampling time when reading
tS_vrefint (1) - 4(2) - - µs
the internal reference voltage
Start time of reference voltage
tstart_vrefint - - 8 12(2) µs
buffer when ADC is enable
VREFINT buffer consumption from
IDD(VREFINTBUF) - - 12.5 20(2) µA
VDD when converted by ADC
Internal reference voltage spread
∆VREFINT VDD = 3 V - 5 7.5(2) mV
over the temperature range
TCoeff_vrefint Temperature coefficient - - 30 50(2) ppm/°C
ACoeff Long term stability 1000 hours, T = 25 °C - 300 1000(2) ppm
VDDCoeff Voltage coefficient 3.0 V < VDD < 3.6 V - 250 1200(2) ppm/V
VREFINT_DIV1 1/4 reference voltage 24 25 26
%
VREFINT_DIV2 1/2 reference voltage - 49 50 51
VREFINT
VREFINT_DIV3 3/4 reference voltage 74 75 76
1. The shortest sampling time can be determined in the application by multiple iterations.
2. Specified by design. Not tested in production.

Figure 17. VREFINT vs. temperature

V
1.235

1.23

1.225

1.22

1.215

1.21

1.205

1.2

1.195

1.19

1.185
-40 -20 0 20 40 60 80 100 120 °C
Mean Min Max
MSv40169V1

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124
Electrical characteristics STM32G0C1xC/xE

5.3.5 Supply current characteristics


The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 16: Current consumption
measurement scheme.

Typical and maximum current consumption


The MCU is placed under the following conditions:
• All I/O pins are in analog input mode
• All peripherals are disabled except when explicitly mentioned
• The flash memory access time is adjusted with the minimum wait states number,
depending on the fHCLK frequency (refer to the table “Number of wait states according
to CPU clock (HCLK) frequency” available in the RM0444 reference manual).
• When the peripherals are enabled fPCLK = fHCLK
• For flash memory and shared peripherals fPCLK = fHCLK = fHCLKS
Unless otherwise stated, values given in Table 28 through Table 36 are derived from tests
performed under ambient temperature and supply voltage conditions summarized in
Table 24: General operating conditions.

72/163 DS13564 Rev 5


STM32G0C1xC/xE Electrical characteristics

Table 28. Current consumption in Run and Low-power run modes


at different die temperatures
Conditions Typ Max(1)
Symbol Parameter Unit
General fHCLK Fetch 25 85 125 25 85 130
from(2) °C °C °C °C °C °C
64 MHz 8.6 8.8 9.4 9.0 9.1 9.7
56 MHz 7.5 7.8 8.3 7.9 8.0 8.6
48 MHz Flash 6.7 7.0 7.6 7.1 7.2 7.8
32 MHz memory 4.6 4.8 5.4 4.8 5.0 5.5
Range 1;
PLL enabled; 24 MHz 3.6 3.8 4.3 3.8 4.1 4.6
fHCLK = fHSE_bypass 16 MHz 2.3 2.5 3.0 2.4 2.6 3.2
(≤16 MHz),
fHCLK = fPLLRCLK 64 MHz 8.8 8.9 9.4 9.3 9.4 9.9
(>16 MHz); 56 MHz 7.7 7.8 8.3 8.2 8.3 8.8
Supply (3)
current in 48 MHz 6.9 7.0 7.5 7.3 7.4 7.9
IDD(Run) Run mode SRAM mA
(from flash 32 MHz 4.7 4.8 5.3 5.0 5.1 5.6
memory) 24 MHz 3.6 3.8 4.3 4.1 4.2 4.7
16 MHz 2.3 2.4 2.9 2.5 2.6 3.2
16 MHz 1.8 2.0 2.4 2.2 2.3 2.9
Range 2; Flash
PLL enabled; 8 MHz 1.0 1.1 1.6 1.3 1.4 2.1
memory
fHCLK = fHSE_bypass 2 MHz 0.3 0.4 0.9 0.6 0.9 1.4
(≤16 MHz),
fHCLK = fPLLRCLK 16 MHz 1.9 2.0 2.5 2.3 2.4 3.0
(>16 MHz); 8 MHz SRAM 1.0 1.1 1.6 1.3 1.5 2.1
(3)
2 MHz 0.3 0.4 0.9 0.6 0.9 1.4
2 MHz 280 415 950 585 845 1515
1 MHz 155 285 820 530 835 1315
Flash
500 kHz 90 220 750 475 795 1220
memory
PLL disabled; 125 kHz 45 170 700 445 745 1190
Supply fHCLK = fHSE
current in bypass (> 32 kHz), 32 kHz 30 155 695 430 720 1185
IDD(LPRun) µA
Low-power fHCLK = fLSE 2 MHz 250 360 855 575 835 1495
run mode bypass (= 32 kHz);
(3) 1 MHz 140 260 730 530 825 1300
500 kHz SRAM 80 205 650 475 780 1230
125 kHz 40 155 635 440 745 1200
32 kHz 30 135 625 415 715 1180
1. Based on characterization results, not tested in production.
2. Prefetch and cache enabled when fetching from flash memory. Code compiled with high optimization for space in SRAM.
3. VDD = 3.0 V for values in Typ columns and 3.6 V for values in Max columns, all peripherals disabled.

DS13564 Rev 5 73/163


124
Electrical characteristics STM32G0C1xC/xE

Table 29. Typical current consumption in Run and Low-power run modes,
depending on code executed
Conditions Typ Typ
Symbol Parameter Unit Unit
Fetch
General Code 25 °C 25 °C
from(1)

Reduced code(3) 8.70 136


Coremark 8.15 127
Flash
Dhrystone 2.1 8.00 125
memory
Fibonacci 7.30 114
Range 1;
fHCLK = fPLLRCLK = While(1) loop 5.90 92
64 MHz; Reduced code(3) 8.85 138
(2)
Coremark 9.10 142
Dhrystone 2.1 SRAM 8.95 140
Fibonacci 9.85 154
Supply While(1) loop 8.85 138
IDD(Run) current in mA μA/MHz
Run mode Reduced code(3) 2.45 153
Coremark 1.90 119
Flash
Dhrystone 2.1 1.90 119
memory
Range 2; Fibonacci 1.70 106
fHCLK = fHSI16 = While(1) loop 1.35 84
16 MHz,
PLL disabled, Reduced code(3) 2.10 131
(2)
Coremark 2.10 131
Dhrystone 2.1 SRAM 2.05 128
Fibonacci 2.25 141
While(1) loop 2.05 128
Reduced code(3) 485 243
Coremark 475 238
Flash
Dhrystone 2.1 480 240
memory
Fibonacci 500 250
Supply fHCLK = fHSI16/8 =
current in 2 MHz; While(1) loop 515 258
IDD(LPRun) μA μA/MHz
Low-power PLL disabled, Reduced code (3) 490 245
(2)
run mode
Coremark 485 243
Dhrystone 2.1 SRAM 480 240
Fibonacci 510 255
While(1) loop 480 240
1. Prefetch and cache enabled when fetching from flash memory. Code compiled with high optimization for space in SRAM.
2. VDD = 3.3 V, all peripherals disabled, cache enabled, prefetch disabled for execution in flash memory and enabled in SRAM

74/163 DS13564 Rev 5


STM32G0C1xC/xE Electrical characteristics

3. Reduced code used for characterization results provided in Table 28.

Table 30. Current consumption in Sleep and Low-power sleep modes


Conditions Typ Max(1)
Symbol Parameter Unit
General Voltage fHCLK 25 85 125 25 85 130
scaling °C °C °C °C °C °C
64 MHz 1.9 2.0 2.6 2.5 2.6 3.3
56 MHz 1.7 1.8 2.4 2.2 2.4 3.2
Flash memory enabled; 48 MHz 1.5 1.6 2.2 1.9 2.1 2.8
fHCLK = fHSE bypass Range 1
Supply (≤16 MHz; PLL 32 MHz 1.1 1.2 1.8 1.4 1.6 2.3
current in disabled),
IDD(Sleep) 24 MHz 0.9 1.0 1.6 1.2 1.3 2.1 mA
Sleep fHCLK = fPLLRCLK
mode (>16 MHz; PLL 16 MHz 0.5 0.6 1.2 0.7 0.9 1.6
enabled);
16 MHz 0.4 0.6 1.0 0.6 0.7 1.4
All peripherals disabled
Range 2 8 MHz 0.3 0.4 0.9 0.4 0.5 1.2
2 MHz 0.2 0.3 0.7 0.2 0.4 1.0
2 MHz 70 200 705 175 500 1325
Flash memory disabled;
Supply 1 MHz 48 175 685 145 438 1285
PLL disabled;
current in
IDD(LPSleep) f =f bypass (> 32 kHz), 500 kHz 37 165 670 130 413 1255 µA
Low-power HCLK HSE
fHCLK = fLSE bypass (= 32 kHz);
sleep mode 125 kHz 28 155 665 105 388 1250
All peripherals disabled
32 kHz 26 150 660 90 375 1210
1. Based on characterization results, not tested in production.

Table 31. Current consumption in Stop 0 mode


Conditions Typ Max(1)
Symbol Parameter Unit
HSI kernel VDD 25°C 85°C 125°C 25°C 85°C 130°C

1.8 V 290 370 675 370 470 850


2.4 V 295 370 680 370 470 870
Enabled
3V 295 375 695 375 475 930
Supply
current in 3.6 V 300 380 695 375 475 1050
IDD(Stop 0) µA
Stop 0 1.8 V 100 190 505 180 290 680
mode
2.4 V 100 195 510 180 290 685
Disabled
3V 105 195 525 180 295 695
3.6 V 105 200 530 185 305 830
1. Based on characterization results, not tested in production.

DS13564 Rev 5 75/163


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Electrical characteristics STM32G0C1xC/xE

Table 32. Current consumption in Stop 1 mode


Conditions Typ Max(1)
Symbol Parameter Unit
Flash
RTC(2) VDD 25°C 85°C 125°C 25°C 85°C 130°C
memory

1.8 V 2.9 25 105 7.3 78.1 336


2.4 V 3.1 26 110 9.4 97.5 392
Disabled
3V 3.3 26 110 14.6 106 440

Not 3.6 V 3.6 26 110 17.1 110 500


powered 1.8 V 3.3 25 105 8.3 78.1 336
Supply
current in 2.4 V 3.6 26 110 10.9 97.5 392
IDD(Stop 1) Enabled µA
Stop 1 3V 3.7 26 110 16.3 106 440
mode
3.6 V 4.2 27 110 19.9 115 500
1.8 V 7.0 30 110 17.5 93.8 352
2.4 V 7.3 30 115 22.1 113 410
Powered Disabled
3V 7.5 30 115 33.1 123 460
3.6 V 7.8 31 115 36.9 132 523
1. Based on characterization results, not tested in production.
2. Clocked by LSI

Table 33. Current consumption in Standby mode


Conditions Typ Max(1)
Symbol Parameter Unit
General VDD 25°C 85°C 125°C 25°C 85°C 130°C
1.8 V 0.1 2.1 9.4 0.8 14 45
2.4 V 0.1 2.5 11.5 1.2 17 54
RTC disabled
3.0 V 0.2 3.0 13.5 1.4 18 64
3.6 V 0.3 3.5 16.0 1.8 21 74
1.8 V 0.4 2.3 9.7 2.0 15 45
RTC enabled, 2.4 V 0.5 2.8 11.5 2.5 18 55
clocked by LSI; 3.0 V 0.7 3.4 14.0 3.0 20 64
Supply current 3.6 V 0.9 4.0 16.0 3.3 23 75
IDD(Standby) in Standby µA
mode(2) 1.8 V 0.3 2.3 9.6 2.1 14 45
IWDG enabled, 2.4 V 0.4 2.7 11.5 2.3 17 54
clocked by LSI 3.0 V 0.5 3.3 13.5 2.6 19 64
3.6 V 0.7 3.8 16.0 3.0 22 74
1.8 V 0.7 2.0 9.4 - - -
2.4 V 0.9 2.4 11.0 - - -
ENB_ULP = 0
3.0 V 1.1 2.9 13.5 - - -
3.6 V 1.3 3.4 15.5 - - -

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STM32G0C1xC/xE Electrical characteristics

Table 33. Current consumption in Standby mode (continued)


Conditions Typ Max(1)
Symbol Parameter Unit
General VDD 25°C 85°C 125°C 25°C 85°C 130°C
1.8 V 1.0 11.5 57 4.3 41 265
Extra supply
current to SRAM retention 2.4 V 1.0 11.5 57 4.3 41 265
∆IDD(SRAM) µA
retain SRAM enabled 3.0 V 1.1 11.6 58 4.4 41 270
content(3)
3.6 V 1.2 11.6 59 4.4 42 270
1. Based on characterization results, not tested in production.
2. Without SRAM retention and with ULPEN bit set
3. To be added to IDD(Standby) as appropriate

Table 34. Current consumption in Shutdown mode


Conditions Typ Max(1)
Symbol Parameter Unit
RTC VDD 25 °C 85 °C 125 °C 25 °C 85 °C 130 °C
1.8 V 23 840 7050 240 3210 39200
2.4 V 38 965 8050 370 3910 44600
Disabled
3.0 V 38 1100 9550 370 4700 51500
Supply current 3.6 V 57 1350 11000 500 5700 59400
IDD(Shutdown) in Shutdown nA
mode 1.8 V 235 1050 7400 290 3850 47000
Enabled, clocked 2.4 V 320 1250 8400 440 4690 53500
by LSE bypass at
32.768 kHz 3.0 V 425 1500 9950 450 5640 61800
3.6 V 550 1850 11500 590 6840 71200
1. Based on characterization results, not tested in production.

Table 35. Current consumption in VBAT mode


Conditions Typ
Symbol Parameter Unit
RTC VDD 25°C 85°C 125°C
1.8 V 195 416 2015
Enabled, clocked by 2.4 V 320 530 2366
LSE bypass at
32.768 kHz 3.0 V 492 635 2838
3.6 V 627 908 3339
1.8 V 130 325 1550
Enabled, clocked by 2.4 V 160 400 1800
Supply current in
IDD(VBAT) LSE crystal at nA
VBAT mode 3.0 V 210 500 2050
32.768 kHz
3.6 V 285 605 2400
1.8 V 4 160 1450
2.4 V 4 190 1700
Disabled
3.0 V 4 220 1950
3.6 V 7 270 2250

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124
Electrical characteristics STM32G0C1xC/xE

I/O system current consumption


The current consumption of the I/O system has two components: static and dynamic.
I/O static current consumption
All the I/Os used with internal or external pull-up or pull-down resistor generate current
consumption when the pin is externally or internally tied low or high, respectively. The value
of this current consumption can be simply computed by using the pull-up/pull-down resistor
values. For internal pull-up/pull-down resistors, the indicative values are given in Table 55:
I/O static characteristics. Any other external load must also be considered to estimate the
current consumption.
Additional I/O current consumption is due to I/Os configured as inputs if an intermediate
voltage level is externally applied. This current consumption is caused by the input Schmitt
trigger circuits used to discriminate the input value. Unless this specific configuration is
required by the application, this supply current consumption can be avoided by configuring
these I/Os in analog mode. This is notably the case of ADC input pins which should be
configured as analog inputs.
Caution: Any floating input pin can also settle to an intermediate voltage level or switch inadvertently,
as a result of external electromagnetic noise. To avoid current consumption related to
floating pins, they must either be configured in analog mode, or forced internally to a definite
digital value. This can be done either by using pull-up/down resistors or by configuring the
pins in output mode.
I/O dynamic current consumption
In addition to the internal peripheral current consumption measured previously
(seeTable 36: Current consumption of peripherals ), the I/Os used by an application also
contribute to the current consumption. When an I/O pin switches, it uses the current from
the I/O supply voltage to supply the I/O pin circuitry and to charge/discharge the capacitive
load (internal and external) connected to the pin:

I SW = V DDIOx × f SW × C

where
ISW is the current sunk by a switching I/O to charge/discharge the capacitive load
VDDIOx is the I/O supply voltage
fSW is the I/O switching frequency
C is the total capacitance seen by the I/O pin: C = CINT+ CEXT + CS
CS is the PCB board capacitance including the pad pin.
The test pin is configured in push-pull output mode and is toggled by software at a fixed
frequency.

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STM32G0C1xC/xE Electrical characteristics

On-chip peripheral current consumption


The current consumption of the on-chip peripherals is given in the following table. The MCU
is placed under the following conditions:
• All I/O pins are in Analog mode
• The given value is calculated by measuring the difference of the current consumptions:
– when the peripheral is clocked on
– when the peripheral is clocked off
• Ambient operating temperature and supply voltage conditions summarized in Table 21:
Voltage characteristics
• The power consumption of the digital part of the on-chip peripherals is given in the
following table. The power consumption of the analog part of the peripherals (where
applicable) is indicated in each related section of the datasheet.

Table 36. Current consumption of peripherals


Consumption in µA/MHz
Peripheral Bus
Low-power run
Range 1 Range 2
and sleep

IOPORT Bus IOPORT 0.5 0.4 0.3


GPIOA IOPORT 3.1 2.4 3.0
GPIOB IOPORT 2.9 2.3 3.0
GPIOC IOPORT 3.0 2.4 2.8
GPIOD IOPORT 2.7 2.2 2.5
GPIOE IOPORT 1.6 1.4 1.6
GPIOF IOPORT 2.8 2.3 2.6
Bus matrix AHB 0.5 0.5 0.5
All AHB Peripherals AHB 31 26 30
DMA1/DMAMUX AHB 5.1 4.3 4.9
CRC AHB 0.4 0.4 0.5
FLASH AHB 22 18 21
RNG AHB 1.5 1.3 1.5
AES AHB 2.7 2.3 2.5
All APB peripherals APB 120 110 220
AHB to APB bridge(1) APB 0.2 0.2 0.1
PWR APB 0.4 0.3 0.4
WWDG APB 0.4 0.4 0.4
DMA2 APB 1.5 1.3 1.5
TIM1 APB 7.6 6.3 7.2
TIM2 APB 5.2 4.3 4.9
TIM3 APB 4.7 3.9 4.3
TIM4 APB 4.4 3.7 4.2
TIM6 APB 1.2 1.0 1.1

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124
Electrical characteristics STM32G0C1xC/xE

Table 36. Current consumption of peripherals (continued)


Consumption in µA/MHz
Peripheral Bus
Low-power run
Range 1 Range 2
and sleep

TIM7 APB 0.8 0.7 0.8


TIM14 APB 1.4 1.2 1.3
TIM15 APB 4.2 3.5 3.9
TIM16 APB 2.7 2.3 2.5
TIM17 APB 0.8 0.7 0.7
LPTIM1 APB 3.3 2.7 3.1
LPTIM2 APB 3.2 2.7 3.1
I2C1 APB 3.6 3.0 3.3
I2C2 APB 3.4 2.8 3.2
I2C3 APB 0.9 0.7 0.8
SPI1 APB 2.2 1.9 2.1
SPI2 APB 2.1 1.7 2.0
SPI3 APB 1.4 1.2 1.3
USART1 APB 7.4 6.2 6.9
USART2 APB 7.4 6.2 7.0
USART3 APB 7.4 6.2 6.9
USART4 APB 2.1 1.8 2.0
USART5 APB 2.3 1.9 2.1
USART6 APB 2.2 1.8 2.1
LPUART1 APB 4.5 3.7 4.2
LPUART2 APB 4.9 4.1 4.6
ADC APB 2.4 2.0 2.3
DAC1 APB 1.9 1.6 1.8
SYSCFG/VREFBUF/COMP APB 0.5 0.4 0.5
CEC APB 0.4 0.3 0.3
CRS APB 0.2 0.2 0.3
USB APB 3.3 2.7 3.0
FDCAN APB 16 13 15
UCPD1 APB 4.0 7.9 59.0(2)
UCPD2 APB 4.0 7.9 59.5(2)
1. The AHB to APB Bridge is automatically active when at least one peripheral is ON on the APB.
2. UCPDx are always clocked by HSI16.

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STM32G0C1xC/xE Electrical characteristics

5.3.6 Wakeup time from low-power modes and voltage scaling


transition times
The wakeup times given in Table 37 are the latency between the event and the execution of
the first user instruction.

Table 37. Low-power mode wakeup times(1)


Symbol Parameter Conditions Typ Max Unit

Wakeup time from


tWUSLEEP Sleep to Run - 11 11
mode
CPU
Wakeup time from Transiting to Low-power-run-mode execution in flash cycles
tWULPSLEEP Low-power sleep memory not powered in Low-power sleep mode; 11 14
mode HCLK = HSI16 / 8 = 2 MHz
Transiting to Run-mode execution in flash memory not
powered in Stop 0 mode;
5.6 6
HCLK = HSI16 = 16 MHz;
Wakeup time from Regulator in Range 1 or Range 2
tWUSTOP0 µs
Stop 0 Transiting to Run-mode execution in SRAM or in flash
memory powered in Stop 0 mode;
2 2.4
HCLK = HSI16 = 16 MHz;
Regulator in Range 1 or Range 2
Transiting to Run-mode execution in flash memory not
powered in Stop 1 mode;
9.0 11.2
HCLK = HSI16 = 16 MHz;
Regulator in Range 1 or Range 2
Transiting to Run-mode execution in SRAM or in flash
memory powered in Stop 1 mode;
5 7.5
HCLK = HSI16 = 16 MHz;
Wakeup time from Regulator in Range 1 or Range 2
tWUSTOP1 µs
Stop 1 Transiting to Low-power-run-mode execution in flash
memory not powered in Stop 1 mode;
22 25.3
HCLK = HSI16/8 = 2 MHz;
Regulator in low-power mode (LPR = 1 in PWR_CR1)
Transiting to Low-power-run-mode execution in SRAM or
in flash memory powered in Stop 1 mode;
18 23.5
HCLK = HSI16 / 8 = 2 MHz;
Regulator in low-power mode (LPR = 1 in PWR_CR1)
Transiting to Run mode;
Wakeup time from
tWUSTBY HCLK = HSI16 = 16 MHz; 14.5 30 µs
Standby mode
Regulator in Range 1

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124
Electrical characteristics STM32G0C1xC/xE

Table 37. Low-power mode wakeup times(1) (continued)


Symbol Parameter Conditions Typ Max Unit

Transiting to Run mode;


Wakeup time from
tWUSHDN HCLK = HSI16 = 16 MHz; 258 340 µs
Shutdown mode
Regulator in Range 1
Wakeup time from Transiting to Run mode;
tWULPRUN Low-power run 5 7 µs
HSISYS = HSI16/8 = 2 MHz
mode(2)
1. Based on characterization results, not tested in production.
2. Time until REGLPF flag is cleared in PWR_SR2.

Table 38. Regulator mode transition times(1)


Symbol Parameter Conditions Typ Max Unit

Transition times between regulator


tVOST HSISYS = HSI16 20 40 µs
Range 1 and Range 2(2)
1. Based on characterization results, not tested in production.
2. Time until VOSF flag is cleared in PWR_SR2.

Table 39. Wakeup time using LPUART(1)


Symbol Parameter Conditions Typ Max Unit

Wakeup time needed to calculate the maximum Stop mode 0 - 1.7


tWULPUART LPUART baud rate allowing to wakeup up from Stop µs
mode when LPUART clock source is HSI16 Stop mode 1 - 8.5

1. Specified by design. Not tested in production.

5.3.7 External clock source characteristics


High-speed external user clock generated from an external source
In bypass mode the HSE oscillator is switched off and the input pin is a standard GPIO.
The external clock signal has to respect the I/O characteristics in Section 5.3.14. See
Figure 18 for recommended clock input waveform.

Table 40. High-speed external user clock characteristics(1)


Symbol Parameter Conditions Min Typ Max Unit

Voltage scaling
- 8 48
Range 1
fHSE_ext User external clock source frequency MHz
Voltage scaling
- 8 26
Range 2
VHSEH OSC_IN input pin high level voltage - 0.7 VDDIO1 - VDDIO1
V
VHSEL OSC_IN input pin low level voltage - VSS - 0.3 VDDIO1

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STM32G0C1xC/xE Electrical characteristics

Table 40. High-speed external user clock characteristics(1) (continued)


Symbol Parameter Conditions Min Typ Max Unit

Voltage scaling
7 - -
tw(HSEH) Range 1
OSC_IN high or low time ns
tw(HSEL) Voltage scaling
18 - -
Range 2
1. Specified by design. Not tested in production.

Figure 18. High-speed external clock source AC timing diagram

tw(HSEH)

VHSEH
90%
10%
VHSEL

tr(HSE) t
tf(HSE) tw(HSEL)
THSE

MS19214V2

Low-speed external user clock generated from an external source


In bypass mode the LSE oscillator is switched off and the input pin is a standard GPIO.
The external clock signal has to respect the I/O characteristics in Section 5.3.14. See
Figure 19 for recommended clock input waveform.

Table 41. Low-speed external user clock characteristics(1)


Symbol Parameter Conditions Min Typ Max Unit

fLSE_ext User external clock source frequency - - 32.768 1000 kHz


VLSEH OSC32_IN input pin high level voltage - 0.7 VDDIO1 - VDDIO1
V
VLSEL OSC32_IN input pin low level voltage - VSS - 0.3 VDDIO1
tw(LSEH)
OSC32_IN high or low time - 250 - - ns
tw(LSEL)
1. Specified by design. Not tested in production.

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Electrical characteristics STM32G0C1xC/xE

Figure 19. Low-speed external clock source AC timing diagram

tw(LSEH)

VLSEH
90%
10%
VLSEL

tr(LSE) t
tf(LSE) tw(LSEL)
TLSE

MS19215V2

High-speed external clock generated from a crystal/ceramic resonator


The high-speed external (HSE) clock can be supplied with a 4 to 48 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on design
simulation results obtained with typical external components specified in Table 42. In the
application, the resonator and the load capacitors have to be placed as close as possible to
the oscillator pins in order to minimize output distortion and startup stabilization time. Refer
to the crystal resonator manufacturer for more details on the resonator characteristics
(frequency, package, accuracy).

Table 42. HSE oscillator characteristics(1)


Symbol Parameter Conditions(2) Min Typ Max Unit

fOSC_IN Oscillator frequency - 4 8 48 MHz


RF Feedback resistor - - 200 - kΩ
(3)
During startup - - 5.5
VDD = 3 V,
Rm = 30 Ω, - 0.44 -
CL = 10 pF@8 MHz
VDD = 3 V,
Rm = 45 Ω, - 0.45 -
CL = 10 pF@8 MHz

IDD(HSE) HSE current consumption VDD = 3 V, mA


Rm = 30 Ω, - 0.68 -
CL = 5 pF@48 MHz
VDD = 3 V,
Rm = 30 Ω, - 0.94 -
CL = 10 pF@48 MHz
VDD = 3 V,
Rm = 30 Ω, - 1.77 -
CL = 20 pF@48 MHz
Maximum critical crystal
Gm Startup - - 1.5 mA/V
transconductance
tSU(HSE)(4) Startup time VDD is stabilized - 2 - ms
1. Specified by design. Not tested in production.
2. Resonator characteristics given by the crystal/ceramic resonator manufacturer.

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STM32G0C1xC/xE Electrical characteristics

3. This consumption level occurs during the first 2/3 of the tSU(HSE) startup time
4. tSU(HSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz oscillation is
reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer

For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5 pF to 20 pF range (typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see Figure 20). CL1 and CL2 are usually the
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF
can be used as a rough estimate of the combined pin and board capacitance) when sizing
CL1 and CL2.
Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.

Figure 20. Typical application with an 8 MHz crystal

Resonator with integrated


capacitors
CL1

OSC_IN fHSE
Bias
8 MHz controlled
resonator RF gain

REXT (1) OSC_OUT


CL2

MS19876V1

1. REXT value depends on the crystal characteristics.

Low-speed external clock generated from a crystal resonator


The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal resonator
oscillator. All the information given in this paragraph are based on design simulation results
obtained with typical external components specified in Table 43. In the application, the
resonator and the load capacitors have to be placed as close as possible to the oscillator
pins in order to minimize output distortion and startup stabilization time. Refer to the crystal
resonator manufacturer for more details on the resonator characteristics (frequency,
package, accuracy).

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Electrical characteristics STM32G0C1xC/xE

Table 43. LSE oscillator characteristics (fLSE = 32.768 kHz)(1)


Symbol Parameter Conditions(2) Min Typ Max Unit

LSEDRV[1:0] = 00
- 250 -
Low drive capability
LSEDRV[1:0] = 01
- 315 -
Medium low drive capability
IDD(LSE) LSE current consumption nA
LSEDRV[1:0] = 10
- 500 -
Medium high drive capability
LSEDRV[1:0] = 11
- 630 -
High drive capability
LSEDRV[1:0] = 00
- - 0.5
Low drive capability
LSEDRV[1:0] = 01
- - 0.75
Maximum critical crystal Medium low drive capability
Gmcritmax µA/V
gm LSEDRV[1:0] = 10
- - 1.7
Medium high drive capability
LSEDRV[1:0] = 11
- - 2.7
High drive capability
tSU(LSE)(3) Startup time VDD is stabilized - 2 - s
1. Specified by design. Not tested in production.
2. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for
ST microcontrollers”.
3. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is
reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer

Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.

Figure 21. Typical application with a 32.768 kHz crystal

Resonator with integrated


capacitors
CL1

OSC32_IN fLSE

32.768 kHz Drive


resonator programmable
amplifier

OSC32_OUT
CL2

MS30253V2

Note: An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden
to add one.

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STM32G0C1xC/xE Electrical characteristics

5.3.8 Internal clock source characteristics


The parameters given in Table 44 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 24: General operating
conditions. The provided curves are characterization results, not tested in production.

High-speed internal (HSI16) RC oscillator

Table 44. HSI16 oscillator characteristics(1)


Symbol Parameter Conditions Min Typ Max Unit

fHSI16 HSI16 Frequency VDD=3.0 V, TA=30 °C 15.88 - 16.08 MHz

HSI16 oscillator frequency drift over TA= 0 to 85 °C -1 - 1 %


∆Temp(HSI16)
temperature TA= -40 to 125 °C -2 - 1.5 %
HSI16 oscillator frequency drift over
∆VDD(HSI16) VDD=1.62 V to 3.6 V -0.1 - 0.05 %
VDD
From code 127 to 128 -8 -6 -4
From code 63 to 64
-5.8 -3.8 -1.8
TRIM HSI16 frequency user trimming step From code 191 to 192 %
For all other code
0.2 0.3 0.4
increments
DHSI16(2) Duty Cycle - 45 - 55 %
tsu(HSI16)(2) HSI16 oscillator start-up time - - 0.8 1.2 μs
(2)
tstab(HSI16) HSI16 oscillator stabilization time - - 3 5 μs
IDD(HSI16)(2) HSI16 oscillator power consumption - - 155 190 μA
1. Based on characterization results, not tested in production.
2. Specified by design. Not tested in production.

Figure 22. HSI16 frequency vs. temperature


MHz
16.4
+2 %
16.3
+1.5 %
16.2
+1 %

16.1

16

15.9

15.8 -1 %

-1.5 %
15.7
-2 %
15.6
-40 -20 0 20 40 60 80 100 120 °C
Mean min max
MSv39299V2

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Electrical characteristics STM32G0C1xC/xE

High-speed internal 48 MHz (HSI48) RC oscillator

Table 45. HSI48 oscillator characteristics(1)


Symbol Parameter Conditions Min Typ Max Unit

fHSI48 HSI48 Frequency VDD=3.0V, TA=30°C - 48 - MHz


(2) (2)
TRIM HSI48 user trimming step - - 0.11 0.18 %
USER TRIM
HSI48 user trimming coverage ±64 steps ±6(3) ±7(3) - %
COVERAGE
DuCy(HSI48) Duty Cycle - 45(2) - 55(2) %
VDD = 3.0 V to 3.6 V,
Accuracy of the HSI48 oscillator - - ±3(3)
TA = –15 to 85 °C
ACCHSI48_REL over temperature (factory %
calibrated) VDD = 1.65 V to 3.6 V, (3)
- - ±4.5
TA = –40 to 125 °C

HSI48 oscillator frequency drift VDD = 3 V to 3.6 V - 0.025(3) 0.05(3)


DVDD(HSI48) %
with VDD VDD = 1.65 V to 3.6 V - 0.05(3) 0.1(3)
tsu(HSI48) HSI48 oscillator start-up time - - 2.5(2) 6(2) μs
HSI48 oscillator power
IDD(HSI48) - - 340(2) 380(2) μA
consumption
Next transition jitter
NT jitter - - +/-0.15(2) - ns
Accumulated jitter on 28 cycles(4)
Paired transition jitter
PT jitter - - +/-0.25(2) - ns
Accumulated jitter on 56 cycles(4)
1. VDD = 3 V, TA = –40 to 125°C unless otherwise specified.
2. Specified by design. Not tested in production.
3. Evaluated by characterization. Not tested in production.
4. Jitter measurement are performed without clock source activated in parallel.

Figure 23. HSI48 frequency versus temperature


%
6

-2

-4

-6
-50 -30 -10 10 30 50 70 90 110 130
°C
Avg min max
MSv40989V1

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Low-speed internal (LSI) RC oscillator

Table 46. LSI oscillator characteristics(1)


Symbol Parameter Conditions Min Typ Max Unit

VDD = 3.0 V, TA = 30 °C 31.04 - 32.96


fLSI LSI frequency VDD = 1.62 V to 3.6 V, TA = -40 to kHz
29.5 - 34
125 °C
tSU(LSI)(2) LSI oscillator start-up time - - 80 130 μs
(2)
tSTAB(LSI) LSI oscillator stabilization time 5% of final frequency - 125 180 μs
LSI oscillator power
IDD(LSI)(2) - - 110 180 nA
consumption
1. Based on characterization results, not tested in production.
2. Specified by design. Not tested in production.

5.3.9 PLL characteristics


The parameters given in Table 47 are derived from tests performed under temperature and
VDD supply voltage conditions summarized in Table 24: General operating conditions.

Table 47. PLL characteristics(1)


Symbol Parameter Conditions Min Typ Max Unit

fPLL_IN PLL input clock frequency(2) - 2.66 - 16 MHz

DPLL_IN PLL input clock duty cycle - 45 - 55 %

Voltage scaling Range 1 3.09 - 122


fPLL_P_OUT PLL multiplier output clock P MHz
Voltage scaling Range 2 3.09 - 40
Voltage scaling Range 1 12 - 128
fPLL_Q_OUT PLL multiplier output clock Q MHz
Voltage scaling Range 2 12 - 33
Voltage scaling Range 1 12 - 64
fPLL_R_OUT PLL multiplier output clock R MHz
Voltage scaling Range 2 12 - 16
Voltage scaling Range 1 96 - 344
fVCO_OUT PLL VCO output MHz
Voltage scaling Range 2 96 - 128
tLOCK PLL lock time - - 15 40 μs
RMS cycle-to-cycle jitter - 50 -
Jitter System clock 56 MHz ±ps
RMS period jitter - 40 -
VCO freq = 96 MHz - 200 260
PLL power consumption
IDD(PLL) VCO freq = 192 MHz - 300 380 μA
on VDD(1)
VCO freq = 344 MHz - 520 650
1. Specified by design. Not tested in production.
2. Make sure to use the appropriate division factor M to obtain the specified PLL input clock values.

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Electrical characteristics STM32G0C1xC/xE

5.3.10 Flash memory characteristics

Table 48. Flash memory characteristics(1)


Symbol Parameter Conditions Typ Max Unit

tprog 64-bit programming time - 85 125 µs


Normal programming 2.7 4.6
tprog_row Row (32 double word) programming time
Fast programming 1.7 2.8
Normal programming 21.8 36.6 ms
tprog_page Page (2 Kbyte) programming time
Fast programming 13.7 22.4
tERASE Page (2 Kbyte) erase time - 22.0 40.0
Normal programming 2.8 4.7
tprog_bank Bank (512 Kbyte(2)) programming time s
Fast programming 1.8 2.9
tME Mass erase time - 22.1 40.1 ms
Programming 3 -
IDD(FlashA) Average consumption from VDD Page erase 3 - mA
Mass erase 5 -
Programming, 2 µs peak
7 -
IDD(FlashP) Maximum current (peak) duration mA
Erase, 41 µs peak duration 7 -
1. Specified by design. Not tested in production.
2. Values provided also apply to devices with less flash memory than one 512 Kbyte bank

Table 49. Flash memory endurance and data retention


Symbol Parameter Conditions Min(1) Unit

NEND Endurance TA = -40 to +105 °C 10 kcycles


1 kcycle(2) at TA = 85 °C 30
(2)
1 kcycle at TA = 105 °C 15
1 kcycle(2) at TA = 125 °C 7
tRET Data retention Years
10 kcycles(2) at TA = 55 °C 30
10 kcycles(2) at TA = 85 °C 15
10 kcycles(2) at TA = 105 °C 10
1. Evaluated by characterization. Not tested in production.
2. Cycling performed over the whole temperature range.

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5.3.11 EMC characteristics


Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)


While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
• Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
• FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and
VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 50. They are based on the EMS levels and classes
defined in application note AN1709.

Table 50. EMS characteristics


Level/
Symbol Parameter Conditions
Class

VDD = 3.3 V, TA = +25 °C,


Voltage limits to be applied on any I/O pin to
VFESD fHCLK = 64 MHz, LQFP100, 2B
induce a functional disturbance
conforming to IEC 61000-4-2
Fast transient voltage burst limits to be applied VDD = 3.3 V, TA = +25 °C,
VEFTB through 100 pF on VDD and VSS pins to induce a fHCLK = 64 MHz, LQFP100, 5A
functional disturbance conforming to IEC 61000-4-4

Designing hardened software to avoid noise problems


EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
• corrupted program counter
• unexpected reset
• critical data corruption (for example control registers)

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Electrical characteristics STM32G0C1xC/xE

Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)


The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.

Table 51. EMI characteristics


Symbol Parameter Conditions Monitored frequency band Value Unit

0.1 MHz to 30 MHz 9


fHSE = 8 MHz
30 MHz to 130 MHz 16
Peak(1) fHCLK = 64 MHz dBµV
SEMI VDD = 3.6 V, TA = 25 °C, 130 MHz to 1 GHz 4
LQFP100 package
1 GHz to 2 GHz 8
compliant with IEC 61967-2
Level(2) 0.1 MHz to 2 GHz 2.5 -
1. Refer to AN1709 “EMI radiated test” section.
2. Refer to AN1709 “EMI level classification” section

5.3.12 Electrical sensitivity characteristics


Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)


Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the ANSI/JEDEC standard.

Table 52. ESD absolute maximum ratings


Maximum
Symbol Ratings Conditions Class Unit
value(1)

Electrostatic discharge voltage TA = +25 °C, conforming to


VESD(HBM) 2 2000
(human body model) ANSI/ESDA/JEDEC JS-001
V
Electrostatic discharge voltage TA = +25 °C, conforming to
VESD(CDM) C2a 250
(charge device model) ANSI/ESDA/JEDEC JS-002
1. Based on characterization results, not tested in production.

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Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
• A supply overvoltage is applied to each power supply pin.
• A current is injected to each input, output and configurable I/O pin.
These tests are compliant with EIA/JESD 78A IC latch-up standard.

Table 53. Electrical sensitivity


Symbol Parameter Conditions Class

LU Static latch-up class TA = +125 °C conforming to JESD78 II Level A

5.3.13 I/O current injection characteristics


As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDDIOx (for standard, 3.3 V-capable I/O pins) should be avoided during normal
product operation. However, in order to give an indication of the robustness of the
microcontroller in cases when abnormal injection accidentally happens, susceptibility tests
are performed on a sample basis during device characterization.

Functional susceptibility to I/O current injection


While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out-of-range parameter: ADC error above a certain limit
(higher than 5 LSB TUE), induced leakage current on adjacent pins out of conventional
limits (-5 µA/+0 µA range) or other functional failure (for example reset occurrence or
oscillator frequency deviation).
Negative induced leakage current is caused by negative injection and positive induced
leakage current is caused by positive injection.

Table 54. I/O current injection susceptibility(1)


Functional susceptibility
Symbol Description Unit
Negative Positive
injection injection

All except PA4, PA5, PA6, PB0,


-5 N/A mA
PB3, and PC0
Injected current on
IINJ
pin PA4, PA5 -5 0 mA
PA6, PB0, PB3, and PC0 0 N/A mA
1. Based on characterization results, not tested in production.

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Electrical characteristics STM32G0C1xC/xE

5.3.14 I/O port characteristics


General input/output characteristics
Unless otherwise specified, the parameters given in Table 55 are derived from tests
performed under the conditions summarized in Table 24: General operating conditions. All
I/Os are designed as CMOS- and TTL-compliant.
Note: For information on GPIO configuration, refer to the application note AN4899 “STM32 GPIO
configuration for hardware settings and low-power consumption” available from the ST
website www.st.com.

Table 55. I/O static characteristics


Symbol Parameter Conditions Min Typ Max Unit

0.3 x VDDIOx
All (2)
except 1.62 V < VDDIOx < 3.6 V - -
I/O input low level FT_c 0.39 x VDDIOx
VIL(1) - 0.06 (3) V
voltage
2.7 V < VDDIOx < 3.6 V - - 0.3 x VDDIOx
FT_c
1.62 V < VDDIOx < 2.7 V - - 0.25 x VDDIOx
0.7 x VDDIOx (2) - -
All
I/O input high level except 1.62 V < VDDIOx < 3.6 V 0.49 x VDDIOx
VIH(1) FT_c - - V
voltage + 0.26(3)
FT_c 1.62 V < VDDIOx < 3.6 V 0.7 x VDDIOx - 5
TT_xx,
I/O input
Vhys(3) FT_xx, 1.62 V < VDDIOx < 3.6 V - 200 - mV
hysteresis
RST
0 < VIN ≤ VDDIOx - - 2000
FT_c
VDDIOx < VIN ≤ 5 V - - 3000(4)
0 < VIN ≤ VDDIOx - - 4500
FT_d
VDDIOx < VIN ≤ 5.5 V - - 9000(4)
0 < VIN ≤ VDDIOx - - ±150

Input leakage FT_u VDDIOx ≤ VIN ≤ VDDIOx + 1 V - - 2500


Ilkg nA
current(3) VDDIOx +1 V < VIN ≤ 5.5 V - - 250
0 < VIN ≤ VDDIOx - - ±70
Other
VDDIOx ≤ VIN ≤ VDDIOx + 1 V - - 600(4)
FT_xx
VDDIOx +1 V < VIN ≤ 5.5 V - - 150(4)
0 < VIN ≤ VDDIOx - - ±150
TT_a
VDDIOx < VIN ≤ VDDIOx + 0.3 V - - 2000(4)
Weak pull-up
RPU equivalent resistor VIN = VSS 25 40 55 kΩ
(5)

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Table 55. I/O static characteristics (continued)


Symbol Parameter Conditions Min Typ Max Unit

Weak pull-down
RPD equivalent VIN = VDDIOx 25 40 55 kΩ
resistor(5)
I/O pin
CIO - - 5 - pF
capacitance
1. Refer to Figure 24: I/O input characteristics.
2. Tested in production.
3. Specified by design. Not tested in production.
4. This value represents the pad leakage of the I/O itself. The total product pad leakage is provided by this formula:
ITotal_Ileak_max = 10 µA + [number of I/Os where VIN is applied on the pad] ₓ Ilkg(Max).
5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimal (~10% order).

All I/Os are CMOS- and TTL-compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters, as shown
in Figure 24.

Figure 24. I/O input characteristics


3

2.5
Minimum required
logic level 1 zone
TTL standard requirement VIHmin = 2V
2
DDIO
= 0.7xV
min
nt) V IH
equ ireme
VIN (V) tand ard r
OS s
1.5 ctio n (CM
in produ 0.18
Teste
d VDDIO +
VIHmin = 0.52 Undefined input range
ulation
on sim
Based
1
VDDIO - 0.1
VILmax = 0.4
simulation = 0.3 VDDIO TTL standard requirement VILmax = 0.8V
Based on ent) VILmax
da rd requirem
(CMOS stan
0.5 Tested in production
Minimum required
logic level 0 zone
0
1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6

Device characteristics VDDIO (V)


Tested thresholds MSv47925V1

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Electrical characteristics STM32G0C1xC/xE

Characteristics of FT_e I/Os


The following table and figure specify input characteristics of FT_e I/Os.

Table 56. Input characteristics of FT_e I/Os


Symbol Parameter Conditions Min Typ Max Unit

IINJ Injected current on pin - - - 5 mA


VDDIO1-VIN Voltage over VDDIO1 IINJ = 5 mA - - 2 V
Rd Diode dynamic serial resistor IINJ = 5 mA - - 300 Ω

Figure 25. Current injection into FT_e input with diode active
5

-40°C 25°C 125°C

IINJ (mA)

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2


VIN – VDDIO1 (V) MSv63112V1

Output driving current


The GPIOs (general purpose input/outputs) can sink or source up to ±8 mA, and up to
±15 mA with relaxed VOL/VOH.
In the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in Section 5.2:
• The sum of the currents sourced by all the I/Os on VDDIO1, plus the maximum
consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating
IVDD (see Table 21: Voltage characteristics).
• The sum of the currents sunk by all the I/Os on VSS, plus the maximum consumption of
the MCU sunk on VSS, cannot exceed the absolute maximum rating IVSS (see Table 21:
Voltage characteristics).

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Output voltage levels


Unless otherwise specified, the parameters given in the table below are derived from tests
performed under the ambient temperature and supply voltage conditions summarized in
Table 24: General operating conditions. All I/Os are CMOS- and TTL-compliant (FT OR TT
unless otherwise specified).

Table 57. Output voltage characteristics(1)(2)


Symbol Parameter Conditions Min Max Unit

VOL (3)
Output low level voltage for an I/O pin CMOS port - 0.4
|IIO| = 2 mA for FT_c I/Os
VOH Output high level voltage for an I/O pin = 8 mA for other I/Os VDDIOx - 0.4 -
VDDIOx ≥ 2.7 V
VOL(4) Output low level voltage for an I/O pin TTL port(3) - 0.4
|IIO| = 2 mA for FT_c I/Os
VOH(4) Output high level voltage for an I/O pin = 8 mA for other I/Os 2.4 -
VDDIOx ≥ 2.7 V
VOL(4) Output low level voltage for an I/O pin All I/Os except FT_c - 1.3
|IIO| = 15 mA V
VOH(4) Output high level voltage for an I/O pin VDDIOx ≥ 2.7 V VDDIOx - 1.3 -

VOL(4) Output low level voltage for an I/O pin |IIO| = 1 mA for FT_c I/Os - 0.4
= 3 mA for other I/Os
VOH(4) Output high level voltage for an I/O pin VDDIOx ≥ VDD(min) VDDIOx - 0.45 -

|IIO| = 20 mA
- 0.4
VOLFM+ Output low level voltage for an FT I/O VDDIOx ≥ 2.7 V
(4) pin in FM+ mode (FT I/O with _f option) |I | = 9 mA
IO - 0.4
VDDIOx ≥ VDD(min)
1. The IIO current sourced or sunk by the device must always respect the absolute maximum rating specified in Table 21:
Voltage characteristics, and the sum of the currents sourced or sunk by all the I/Os (I/O ports and control pins) must always
respect the absolute maximum ratings ΣIIO.
2. As PC13, PC14 and PC15 are supplied through the power switch, the sum of currents sourced by those I/Os must not
exceed 3 mA.
3. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
4. Specified by design. Not tested in production.

Output buffer timing characteristics


The definition and values of input/output AC characteristics are given in Figure 26 and
Table 58, respectively.
Unless otherwise specified, the parameters given are derived from tests performed under
the ambient temperature and supply voltage conditions summarized in Table 24: General
operating conditions.

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Electrical characteristics STM32G0C1xC/xE

Table 58. Non-FT_c I/O output timing characteristics(1)(2)


Speed Symbol Parameter Conditions Min Max Unit
C=50 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 2
C=50 pF, 1.6 V ≤ VDDIOx ≤ 2.7 V - 0.35
fmax Maximum frequency MHz
C=10 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 3
C=10 pF, 1.6 V ≤ VDDIOx ≤ 2.7 V - 0.45
00
C=50 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 100
C=50 pF, 1.6 V ≤ VDDIOx ≤ 2.7 V - 225
tr/tf Output rise and fall time ns
C=10 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 75
C=10 pF, 1.6 V ≤ VDDIOx ≤ 2.7 V - 150
C=50 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 10
C=50 pF, 1.6 V ≤ VDDIOx ≤ 2.7 V - 2
fmax Maximum frequency MHz
C=10 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 15
C=10 pF, 1.6 V ≤ VDDIOx ≤ 2.7 V - 2.5
01
C=50 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 30
C=50 pF, 1.6 V ≤ VDDIOx ≤ 2.7 V - 60
tr/tf Output rise and fall time ns
C=10 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 15
C=10 pF, 1.6 V ≤ VDDIOx ≤ 2.7 V - 30
C=50 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 30
C=50 pF, 1.6 V ≤ VDDIOx ≤ 2.7 V - 15
fmax Maximum frequency MHz
C=10 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 60
C=10 pF, 1.6 V ≤ VDDIOx ≤ 2.7 V - 30
10
C=50 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 11
C=50 pF, 1.6 V ≤ VDDIOx ≤ 2.7 V - 22
tr/tf Output rise and fall time ns
C=10 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 4
C=10 pF, 1.6 V ≤ VDDIOx ≤ 2.7 V - 8
C=30 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 60
C=30 pF, 1.6 V ≤ VDDIOx ≤ 2.7 V - 30
fmax Maximum frequency MHz
C=10 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 80(3)
C=10 pF, 1.6 V ≤ VDDIOx ≤ 2.7 V - 40
11
C=30 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 5.5
C=30 pF, 1.6 V ≤ VDDIOx ≤ 2.7 V - 11
tr/tf Output rise and fall time ns
C=10 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 2.5
C=10 pF, 1.6 V ≤ VDDIOx ≤ 2.7 V - 5
fmax Maximum frequency - 1 MHz
Fm+ C=50 pF, 1.6 V ≤ VDDIOx ≤ 3.6 V
tf Output fall time(4) - 5 ns
1. The I/O speed is configured with the OSPEEDRy[1:0] bitfield. The FM+ mode is configured through the SYSCFG_CFGR1
register. Refer to the reference manual RM0444 for the description of the GPIO port configuration.
2. Specified by design. Not tested in production.
3. This value represents the I/O capability but the maximum system frequency is limited to 64 MHz.
4. The fall time is defined between 70% and 30% of the output waveform, according to I2C specification.

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Table 59. FT_c I/O output timing characteristics(1)(2)


Speed Symbol Parameter Conditions Min Max Unit
C=50 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 2
fmax Maximum frequency MHz
C=50 pF, 1.6 V ≤ VDDIOx ≤ 2.7 V - 1
0
C=50 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 170
tr/tf Output rise and fall time ns
C=50 pF, 1.6 V ≤ VDDIOx ≤ 2.7 V - 330
C=50 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 10
fmax Maximum frequency MHz
C=50 pF, 1.6 V ≤ VDDIOx ≤ 2.7 V - 5
1
C=50 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 35
tr/tf Output rise and fall time ns
C=50 pF, 1.6 V ≤ VDDIOx ≤ 2.7 V - 65
1. The I/O speed is configured using the OSPEEDRy[0] bit. Refer to the reference manual RM0444 for description of the
GPIO port configuration.
2. Specified by design. Not tested in production.

Figure 26. I/O AC characteristics definition

90% 10%

50% 50%

10% 90%

t r(IO)out t f(IO)out

Maximum frequency is achieved with a duty cycle at (45 - 55%) when loaded by the
specified capacitance.

MS32132V4

5.3.15 NRST input characteristics


The NRST input driver uses CMOS technology. It is connected to a permanent
pull-up resistor, RPU.
Unless otherwise specified, the parameters given in the following table are derived from
tests performed under the ambient temperature and supply voltage conditions summarized
in Table 24: General operating conditions.

Table 60. NRST pin characteristics(1)


Symbol Parameter Conditions Min Typ Max Unit

NRST input low level


VIL(NRST) - - - 0.3 x VDDIO1
voltage
V
NRST input high level
VIH(NRST) - 0.7 x VDDIO1 - -
voltage
NRST Schmitt trigger
Vhys(NRST) - - 200 - mV
voltage hysteresis

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Table 60. NRST pin characteristics(1) (continued)


Symbol Parameter Conditions Min Typ Max Unit

Weak pull-up
RPU VIN = VSS 25 40 55 kΩ
equivalent resistor(2)
NRST input filtered
VF(NRST) - - - 70 ns
pulse
NRST input not filtered
VNF(NRST) 1.7 V ≤ VDD ≤ 3.6 V 350 - - ns
pulse
1. Specified by design. Not tested in production.
2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series
resistance is minimal (~10% order).

Figure 27. Recommended NRST pin protection

External
reset circuit(1) VDD

RPU
NRST(2) Internal reset
Filter

0.1 μF(3)

MS19878V4

1. The reset network protects the device against parasitic resets.


2. The user must ensure that, upon power-on, the level on the NRST pin can exceed the minimum VIH(NRST)
level. Otherwise, the device does not exit the power-on reset. This applies to any PF2-NRST configuration
set, the GPIO mode inclusive.
3. The external capacitor on NRST must be placed as close as possible to the device.

5.3.16 Extended interrupt and event controller input (EXTI) characteristics


The pulse on the interrupt input must equal or exceed the minimum length, to guarantee that
it is detected by the event controller.

Table 61. EXTI input characteristics(1)


Symbol Parameter Min Typ Max Unit

PLEC Pulse length to event controller 20 - - ns


1. Specified by design. Not tested in production.

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5.3.17 Analog switch booster

Table 62. Analog switch booster characteristics(1)


Symbol Parameter Min Typ Max Unit

VDD Supply voltage 1.62 V - 3.6 V


tSU(BOOST) Booster startup time - - 240 µs
Booster consumption for
- - 250
1.62 V ≤ VDD ≤ 2.0 V
Booster consumption for
IDD(BOOST) - - 500 µA
2.0 V ≤ VDD ≤ 2.7 V
Booster consumption for
- - 900
2.7 V ≤ VDD ≤ 3.6 V
1. Specified by design. Not tested in production.

5.3.18 Analog-to-digital converter characteristics


Unless otherwise specified, the parameters given in Table 63 are preliminary values derived
from tests performed under ambient temperature, fPCLK frequency and VDDA supply voltage
conditions summarized in Table 24: General operating conditions.
Note: It is recommended to perform a calibration after each power-up.

Table 63. ADC characteristics(1)


Symbol Parameter Conditions(2) Min Typ Max Unit

VDDA Analog supply voltage - 1.62 - 3.6 V

Positive reference VDDA ≥ 2 V 2 - VDDA


VREF+ V
voltage VDDA < 2 V VDDA
Range 1 0.14 - 35
fADC ADC clock frequency MHz
Range 2 0.14 - 16
ADC analog clock duty
DADC(3) - 45 - 55 %
cycle
12 bits - - 2.50
10 bits - - 2.92
fs Sampling rate MSps
8 bits - - 3.50
6 bits - - 4.38

External trigger fADC = 35 MHz; 12 bits - - 2.33


fTRIG MHz
frequency 12 bits - - fADC/15
Conversion voltage
VAIN (4) - VSSA - VREF+ V
range
External input
RAIN - - - 50 kΩ
impedance
Internal sample and
CADC - - 5 - pF
hold capacitor

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Electrical characteristics STM32G0C1xC/xE

Table 63. ADC characteristics(1) (continued)


Symbol Parameter Conditions(2) Min Typ Max Unit

Conversion
tSTAB ADC power-up time - 2
cycle
fADC = 35 MHz 2.35 µs
tCAL Calibration time
- 82 1/fADC
1.5 fADC 1.5 fADC
CKMODE[1:0] = 00 + 2 fPCLK - + 3 fPCLK -
cycles cycles
ADC_DR register write CKMODE[1:0] = 01 - 4.5 -
WLATENCY
latency
CKMODE[1:0] = 10 - 8.5 - 1/fPCLK
CKMODE[1:0] = 11 - 2.5 -
CKMODE[1:0] = 00 2 - 3 1/fADC

Trigger conversion CKMODE[1:0] = 01 6.5


tLATR
latency CKMODE[1:0] = 10 12.5 1/fPCLK
CKMODE[1:0] = 11 3.5

fADC = 35 MHz; 0.043 - 4.59 µs


VDDA > 2V 1.5 - 160.5 1/fADC
ts
Sampling time
fADC = 35 MHz; 0.1 - 4.59 µs
VDDA < 2V 3.5 160.5 1/fADC
ADC voltage regulator
tADCVREG_STUP - - - 20 µs
start-up time
fADC = 35 MHz
0.40 - 4.95 µs
Total conversion time Resolution = 12 bits
tCONV (including sampling ts + 12.5 cycles for successive
time) Resolution = 12 bits approximation 1/fADC
= 14 to 173
Laps of time allowed
between two
tIDLE - - - 100 µs
conversions without
rearm
fs = 2.5 MSps - 410 -
ADC consumption
IDDA(ADC) fs = 1 MSps - 164 - µA
from VDDA
fs = 10 kSps - 17 -
fs = 2.5 MSps - 65 -
ADC consumption
IDDV(ADC) fs = 1 MSps - 26 - µA
from VREF+
fs = 10 kSps - 0.26 -
1. Specified by design. Not tested in production.
2. I/O analog switch voltage booster must be enabled (BOOSTEN = 1 in the SYSCFG_CFGR1) when VDDA < 2.4 V and
disabled when VDDA ≥ 2.4 V.
3. This requirement is granted when the incoming clock (PCLK or ADC asynchronous clock) is divided by two or more in the
ADC. For other cases, refer to the reference manual section ADC clock for information on how to fulfill this requirement.

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4. VREF+ is internally connected to VDDA on some packages.Refer to Section 4: Pinouts, pin description and alternate
functions for further details.

Table 64. Maximum ADC RAIN .


Sampling time at 35 MHz Max. RAIN(1)(2)
Resolution Sampling cycle at 35 MHz
[ns] (Ω)

1.5(3) 43 50
3.5 100 680
7.5 214 2200
12.5 357 4700
12 bits
19.5 557 8200
39.5 1129 15000
79.5 2271 33000
160.5 4586 50000
(3)
1.5 43 68
3.5 100 820
7.5 214 3300
12.5 357 5600
10 bits
19.5 557 10000
39.5 1129 22000
79.5 2271 39000
160.5 4586 50000
(3)
1.5 43 82
3.5 100 1500
7.5 214 3900
12.5 357 6800
8 bits
19.5 557 12000
39.5 1129 27000
79.5 2271 50000
160.5 4586 50000

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Electrical characteristics STM32G0C1xC/xE

Table 64. Maximum ADC RAIN . (continued)


Sampling time at 35 MHz Max. RAIN(1)(2)
Resolution Sampling cycle at 35 MHz
[ns] (Ω)

1.5(3) 43 390
3.5 100 2200
7.5 214 5600
12.5 357 10000
6 bits
19.5 557 15000
39.5 1129 33000
79.5 2271 50000
160.5 4586 50000
1. Specified by design. Not tested in production.
2. I/O analog switch voltage booster must be enabled (BOOSTEN = 1 in the SYSCFG_CFGR1) when VDDA < 2.4 V and
disabled when VDDA ≥ 2.4 V.
3. Only allowed with VDDA > 2 V

Table 65. ADC accuracy(1)(2)(3)


Symbol Parameter Conditions(4) Min Typ Max Unit

VDDA = VREF+ = 3 V;
fADC = 35 MHz; fs ≤ 2.5 MSps; - ±3 ±4
TA = 25 °C
2 V < VDDA=VREF+ < 3.6 V;
Total
fADC = 35 MHz; fs ≤ 2.5 MSps; - ±3 ±6.5
ET unadjusted LSB
TA = entire range
error
1.65 V < VDDA=VREF+ < 3.6 V;
TA = entire range
- ±3 ±7.5
Range 1: fADC = 35 MHz; fs ≤ 2.2 MSps;
Range 2: fADC = 16 MHz; fs ≤ 1.1 MSps;
VDDA = VREF+ = 3 V;
fADC = 35 MHz; fs ≤ 2.5 MSps; - ±1.5 ±2
TA = 25 °C
2 V < VDDA = VREF+ < 3.6 V;
fADC = 35 MHz; fs ≤ 2.5 MSps; - ±1.5 ±4.5
EO Offset error LSB
TA = entire range
1.65 V < VDDA=VREF+ < 3.6 V;
TA = entire range
- ±1.5 ±5.5
Range 1: fADC = 35 MHz; fs ≤ 2.2 MSps;
Range 2: fADC = 16 MHz; fs ≤ 1.1 MSps;

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Table 65. ADC accuracy(1)(2)(3) (continued)


Symbol Parameter Conditions(4) Min Typ Max Unit

VDDA = VREF+ = 3 V;
fADC = 35 MHz; fs ≤ 2.5 MSps; - ±3 ±3.5
TA = 25 °C
2 V < VDDA = VREF+ < 3.6 V;
fADC = 35 MHz; fs ≤ 2.5 MSps; - ±3 ±5
EG Gain error LSB
TA = entire range
1.65 V < VDDA = VREF+ < 3.6 V;
TA = entire range
- ±3 ±6.5
Range 1: fADC = 35 MHz; fs ≤ 2.2 MSps;
Range 2: fADC = 16 MHz; fs ≤ 1.1 MSps;
VDDA = VREF+ = 3 V;
fADC = 35 MHz; fs ≤ 2.5 MSps; - ±1.2 ±1.5
TA = 25 °C
2 V < VDDA = VREF+ < 3.6 V;
Differential fADC = 35 MHz; fs ≤ 2.5 MSps; - ±1.2 ±1.5
ED LSB
linearity error TA = entire range
1.65 V < VDDA = VREF+ < 3.6 V;
TA = entire range
- ±1.2 ±1.5
Range 1: fADC = 35 MHz; fs ≤ 2.2 MSps;
Range 2: fADC = 16 MHz; fs ≤ 1.1 MSps;
VDDA = VREF+ = 3 V;
fADC = 35 MHz; fs ≤ 2.5 MSps; - ±2.5 ±3
TA = 25 °C
2 V < VDDA = VREF+ < 3.6 V;
Integral fADC = 35 MHz; fs ≤ 2.5 MSps; - ±2.5 ±3
EL LSB
linearity error TA = entire range
1.65 V < VDDA = VREF+ < 3.6 V;
TA = entire range
- ±2.5 ±3.5
Range 1: fADC = 35 MHz; fs ≤ 2.2 MSps;
Range 2: fADC = 16 MHz; fs ≤ 1.1 MSps;
VDDA = VREF+ = 3 V;
fADC = 35 MHz; fs ≤ 2.5 MSps; 10.1 10.2 -
TA = 25 °C
2 V < VDDA = VREF+ < 3.6 V;
Effective fADC = 35 MHz; fs ≤ 2.5 MSps; 9.6 10.2 -
ENOB bit
number of bits TA = entire range
1.65 V < VDDA = VREF+ < 3.6 V;
TA = entire range
9.5 10.2 -
Range 1: fADC = 35 MHz; fs ≤ 2.2 MSps;
Range 2: fADC = 16 MHz; fs ≤ 1.1 MSps;

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124
Electrical characteristics STM32G0C1xC/xE

Table 65. ADC accuracy(1)(2)(3) (continued)


Symbol Parameter Conditions(4) Min Typ Max Unit

VDDA = VREF+ = 3 V;
fADC = 35 MHz; fs ≤ 2.5 MSps; 62.5 63 -
TA = 25 °C
2 V < VDDA = VREF+ < 3.6 V;
Signal-to-noise
fADC = 35 MHz; fs ≤ 2.5 MSps; 59.5 63 -
SINAD and distortion dB
TA = entire range
ratio
1.65 V < VDDA = VREF+ < 3.6 V;
TA = entire range
59 63 -
Range 1: fADC = 35 MHz; fs ≤ 2.2 MSps;
Range 2: fADC = 16 MHz; fs ≤ 1.1 MSps;
VDDA = VREF+ = 3 V;
fADC = 35 MHz; fs ≤ 2.5 MSps; 63 64 -
TA = 25 °C
2 V < VDDA = VREF+ < 3.6 V;
Signal-to-noise fADC = 35 MHz; fs ≤ 2.5 MSps; 60 64 -
SNR dB
ratio TA = entire range
1.65 V < VDDA = VREF+ < 3.6 V;
TA = entire range
60 64 -
Range 1: fADC = 35 MHz; fs ≤ 2.2 MSps;
Range 2: fADC = 16 MHz; fs ≤ 1.1 MSps;
VDDA = VREF+ = 3 V;
fADC = 35 MHz; fs ≤ 2.5 MSps; - -74 -73
TA = 25 °C
2 V < VDDA = VREF+ < 3.6 V;
Total harmonic fADC = 35 MHz; fs ≤ 2.5 MSps; - -74 -70
THD dB
distortion TA = entire range
1.65 V < VDDA = VREF+ < 3.6 V;
TA = entire range
- -74 -70
Range 1: fADC = 35 MHz; fs ≤ 2.2 MSps;
Range 2: fADC = 16 MHz; fs ≤ 1.1 MSps;
1. Based on characterization results, not tested in production.
2. ADC DC accuracy values are measured after internal calibration.
3. Injecting negative current on any analog input pin significantly reduces the accuracy of A-to-D conversion of signal on
another analog input. It is recommended to add a Schottky diode (pin to ground) to analog pins susceptible to receive
negative current.
4. I/O analog switch voltage booster enabled (BOOSTEN = 1 in the SYSCFG_CFGR1) when VDDA < 2.4 V and disabled
when VDDA ≥ 2.4 V.

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STM32G0C1xC/xE Electrical characteristics

Figure 28. ADC accuracy characteristics

VREF+ VDDA
[1LSB = (or )]
Output code 2n 2n
EG
(1) Example of an actual transfer curve
2n-1 (2) Ideal transfer curve
2n-2 (3) End-point correlation line
2n-3 (2)
n = ADC resolution
ET = total unadjusted error: maximum deviation
(3) between the actual and ideal transfer curves
ET
7 (1) EO = offset error: maximum deviation between the first
actual transition and the first ideal one
6
EL EG = gain error: deviation between the last ideal
5 EO
transition and the last actual one
4 ED = differential linearity error: maximum deviation
ED between actual steps and the ideal one
3
2 EL = integral linearity error: maximum deviation between
1 any actual transition and the end point correlation line
1 LSB ideal
0 VREF+ (VDDA)
(1/2n)*VREF+
(2/2n)*VREF+
(3/2n)*VREF+
(4/2n)*VREF+
(5/2n)*VREF+
(6/2n)*VREF+
(7/2n)*VREF+

(2n-3/2n)*VREF+
(2n-2/2n)*VREF+
(2n-1/2n)*VREF+
(2n/2n)*VREF+
VSSA

MSv19880V6

Figure 29. ADC typical connection diagram

VDDA(4) VREF+(4)

I/O Sample-and-hold ADC converter


analog
RAIN(1) switch RADC
Converter
(2)
Cparasitic Ilkg(3) CADC
VAIN Sampling
switch with
multiplexing

VSS VSS VSSA

MSv67871V3

1. Refer to Table 63: ADC characteristics for the values of RAIN and CADC.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (refer to Table 55: I/O static characteristics for the value of the pad capacitance). A high
Cparasitic value will downgrade conversion accuracy. To remedy this, fADC should be reduced.
3. Refer to Table 55: I/O static characteristics for the values of Ilkg.
4. Refer to Figure 15: Power supply scheme.

General PCB design guidelines


Power supply decoupling should be performed as shown in Figure 15: Power supply
scheme. The 100 nF capacitor should be ceramic (good quality) and it should be placed as
close as possible to the chip.

DS13564 Rev 5 107/163


124
Electrical characteristics STM32G0C1xC/xE

5.3.19 Digital-to-analog converter characteristics

Table 66. DAC characteristics(1)


Symbol Parameter Conditions Min Typ Max Unit

DAC output buffer OFF, DAC_OUT


pin not connected (internal 1.71 -
Analog supply voltage for
VDDA connection only) 3.6 V
DAC ON
Other modes 1.80 -

DAC output buffer OFF, DAC_OUT


pin not connected (internal 1.71 -
VREF+ Positive reference voltage connection only) VDDA V

Other modes 1.80 -

DAC output connected to VSSA 5 - -


RL Resistive load kΩ
buffer ON connected to VDDA 25 - -
RO Output Impedance DAC output buffer OFF 9.6 11.7 13.8 kΩ
Output impedance sample VDD = 2.7 V - - 2
RBON and hold mode, output kΩ
buffer ON VDD = 2.0 V - - 3.5

Output impedance sample VDD = 2.7 V - - 16.5


RBOFF and hold mode, output kΩ
buffer OFF VDD = 2.0 V - - 18.0

CL DAC output buffer ON - - 50 pF


Capacitive load
CSH Sample and hold mode - 0.1 1 µF
VREF+
Voltage on DAC_OUT DAC output buffer ON 0.2 -
VDAC_OUT – 0.2 V
output
DAC output buffer OFF 0 - VREF+
±0.5 LSB - 1.7 3
Settling time (full scale: for Normal mode
±1 LSB - 1.6 2.9
a 12-bit code transition DAC output
between the lowest and the buffer ON ±2 LSB - 1.55 2.85
tSETTLING highest input codes when CL ≤ 50 pF, µs
±4 LSB - 1.48 2.8
DAC_OUT reaches final RL ≥ 5 kΩ
value ±0.5LSB, ±1 LSB, ±8 LSB - 1.4 2.75
±2 LSB, ±4 LSB, ±8 LSB) Normal mode DAC output buffer
- 2 2.5
OFF, ±1LSB, CL = 10 pF

Wakeup time from off state Normal mode DAC output buffer ON
- 4.2 7.5
(setting the ENx bit in the CL ≤ 50 pF, RL ≥ 5 kΩ
tWAKEUP(2) µs
DAC Control register) until Normal mode DAC output buffer
final value ±1 LSB - 2 5
OFF, CL ≤ 10 pF
Normal mode DAC output buffer ON
PSRR VDDA supply rejection ratio - -80 -28 dB
CL ≤ 50 pF, RL = 5 kΩ, DC

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STM32G0C1xC/xE Electrical characteristics

Table 66. DAC characteristics(1) (continued)


Symbol Parameter Conditions Min Typ Max Unit

Minimum time between two DAC_MCR:MODEx[2:0] = 000 or


consecutive writes into the 001 1 - -
DAC_DORx register to CL ≤ 50 pF; RL ≥ 5 kΩ
TW_to_W guarantee a correct µs
DAC_OUT for a small DAC_MCR:MODEx[2:0] = 010 or
variation of the input code 011 1.4 - -
(1 LSB) CL ≤ 10 pF

DAC output buffer


- 0.7 3.5
DAC_OUT ON, CSH = 100 nF
Sampling time in sample ms
pin connected DAC output buffer
and hold mode (code - 10.5 18
OFF, CSH = 100 nF
transition between the
tSAMP lowest input code and the DAC_OUT
highest input code when pin not
DACOUT reaches final connected DAC output buffer
- 2 3.5 µs
value ±1LSB) (internal OFF
connection
only)
Sample and hold mode,
Ileak Output leakage current - - -(3) nA
DAC_OUT pin connected
Internal sample and hold
CIint - 5.2 7 8.8 pF
capacitor
tTRIM Middle code offset trim time DAC output buffer ON 50 - - µs

Middle code offset for 1 trim VREF+ = 3.6 V - 1500 -


Voffset µV
code step VREF+ = 1.8 V - 750 -
No load, middle
- 315 500
DAC output code (0x800)
buffer ON No load, worst code
- 450 670
(0xF1C)
DAC consumption from
IDDA(DAC) DAC output No load, middle µA
VDDA - - 0.2
buffer OFF code (0x800)
315 ₓ 670 ₓ
Sample and hold mode, CSH =
- Ton/(Ton+ Ton/(Ton+
100 nF
Toff)(4) Toff)(4)

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124
Electrical characteristics STM32G0C1xC/xE

Table 66. DAC characteristics(1) (continued)


Symbol Parameter Conditions Min Typ Max Unit

No load, middle
- 185 240
DAC output code (0x800)
buffer ON No load, worst code
- 340 400
(0xF1C)
DAC output No load, middle
- 155 205
DAC consumption from buffer OFF code (0x800)
IDDV(DAC) µA
VREF+
185 ₓ 400 ₓ
Sample and hold mode, buffer ON,
- Ton/(Ton+ Ton/(Ton+
CSH = 100 nF, worst case
Toff)(4) Toff)(4)
155 ₓ 205 ₓ
Sample and hold mode, buffer OFF,
- Ton/(Ton+ Ton/(Ton+
CSH = 100 nF, worst case
Toff)(4) Toff)(4)
1. Specified by design. Not tested in production.
2. In buffered mode, the output can overshoot above the final value for low input code (starting from min value).
3. Refer to Table 55: I/O static characteristics.
4. Ton is the Refresh phase duration. Toff is the Hold phase duration. Refer to RM0444 reference manual for more details.

Figure 30. 12-bit buffered / non-buffered DAC

Buffered / non-buffered DAC

Buffer(1)

RLOAD

12-bit DAC_OUTx
digital-to-analog
converter
CLOAD

MSv47959V1

1. The DAC integrates an output buffer that can be used to reduce the output impedance and to drive external loads directly
without the use of an external operational amplifier. The buffer can be bypassed by configuring the BOFFx bit in the
DAC_CR register.

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STM32G0C1xC/xE Electrical characteristics

Table 67. DAC accuracy(1)


.

Symbol Parameter Conditions Min Typ Max Unit

Differential non DAC output buffer ON - - ±2


DNL
linearity (2) DAC output buffer OFF - - ±2
- monotonicity 10 bits guaranteed
DAC output buffer ON
- - ±4
Integral non CL ≤ 50 pF, RL ≥ 5 kΩ
INL
linearity(3) DAC output buffer OFF
- - ±4
CL ≤ 50 pF, no RL

VREF+ = 3.6 V - - ±12


DAC output buffer ON
CL ≤ 50 pF, RL ≥ 5 kΩ LSB
Offset error at
Offset VREF+ = 1.8 V - - ±25
code 0x800(3)
DAC output buffer OFF
- - ±8
CL ≤ 50 pF, no RL
Offset error at DAC output buffer OFF
Offset1 - - ±5
code 0x001(4) CL ≤ 50 pF, no RL

Offset Error at VREF+ = 3.6 V - - ±5


DAC output buffer ON
OffsetCal code 0x800
CL ≤ 50 pF, RL ≥ 5 kΩ
after calibration VREF+ = 1.8 V - - ±7

DAC output buffer ON


- - ±0.5
CL ≤ 50 pF, RL ≥ 5 kΩ
(5)
Gain Gain error %
DAC output buffer OFF
- - ±0.5
CL ≤ 50 pF, no RL
DAC output buffer ON
Total - - ±30
CL ≤ 50 pF, RL ≥ 5 kΩ
TUE unadjusted LSB
error DAC output buffer OFF
- - ±12
CL ≤ 50 pF, no RL
Total
unadjusted DAC output buffer ON
TUECal - - ±23 LSB
error after CL ≤ 50 pF, RL ≥ 5 kΩ
calibration
DAC output buffer ON
CL ≤ 50 pF, RL ≥ 5 kΩ - 71.2 -
Signal-to-noise 1 kHz, BW 500 kHz
SNR dB
ratio DAC output buffer OFF
CL ≤ 50 pF, no RL, 1 kHz - 71.6 -
BW 500 kHz
DAC output buffer ON
- -78 -
Total harmonic CL ≤ 50 pF, RL ≥ 5 kΩ, 1 kHz
THD dB
distortion DAC output buffer OFF
- -79 -
CL ≤ 50 pF, no RL, 1 kHz

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124
Electrical characteristics STM32G0C1xC/xE

Table 67. DAC accuracy(1) (continued)


Symbol Parameter Conditions Min Typ Max Unit

DAC output buffer ON


Signal-to-noise - 70.4 -
CL ≤ 50 pF, RL ≥ 5 kΩ, 1 kHz
SINAD and distortion dB
ratio DAC output buffer OFF
- 71 -
CL ≤ 50 pF, no RL, 1 kHz
DAC output buffer ON
- 11.4 -
Effective CL ≤ 50 pF, RL ≥ 5 kΩ, 1 kHz
ENOB bits
number of bits DAC output buffer OFF
- 11.5 -
CL ≤ 50 pF, no RL, 1 kHz
1. Specified by design. Not tested in production.
2. Difference between two consecutive codes - 1 LSB.
3. Difference between measured value at Code i and the value at Code i on a line drawn between Code 0 and last Code 4095.
4. Difference between the value measured at Code (0x001) and the ideal value.
5. Difference between ideal slope of the transfer function and measured slope computed from code 0x000 and 0xFFF when
buffer is OFF, and from code giving 0.2 V and (VREF+ – 0.2) V when buffer is ON.

5.3.20 Voltage reference buffer characteristics

Table 68. VREFBUF characteristics(1)


Symbol Parameter Conditions Min Typ Max Unit

VREFBUF VRS = 0 2.4 - 3.6


VDDA operating V
voltage VRS = 1 2.8 - 3.6

Iload = VRS = 0 2.038(2) 2.042 2.046 V


VREFBUF_ Voltage 100 µA
OUT reference output VRS = 1 2.497(2) 2.5 2.503
T = 30 °C
Trim step
TRIM - - ±0.05 ±0.1 %
resolution
CL Load capacitor - 0.5 1 1.5 µF
Equivalent
esr Serial Resistor - - - 2 Ω
of Cload
Static load
Iload - - - 4 mA
current
Iload = 500 µA - 200 1000
Iline_reg Line regulation 2.8 V ≤ VDDA ≤ 3.6 V ppm/V
Iload = 4 mA - 100 500
Iload_reg Load regulation 500 μA ≤ Iload ≤4 mA Normal mode - 50 500 ppm/mA
Temperature
TCoeff_vrefbuf coefficient of -40 °C < TJ < +125 °C - - 50 ppm/ °C
VREFBUF(3)

Power supply DC 40 60 -
PSRR dB
rejection 100 kHz 25 40 -

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STM32G0C1xC/xE Electrical characteristics

Table 68. VREFBUF characteristics(1) (continued)


Symbol Parameter Conditions Min Typ Max Unit
(4)
CL = 0.5 µF - 300 350
tSTART Start-up time CL = 1.1 µF(4) - 500 650 µs
(4)
CL = 1.5 µF - 650 800
Control of
maximum DC
current drive on
IINRUSH - - 8 - mA
VREFBUF_OUT
during start-up
phase (5)
Iload = 0 µA - 16 25
VREFBUF
IDDA(VREFBU
consumption Iload = 500 µA - 18 30 µA
F) from VDDA
Iload = 4 mA - 35 50
1. Specified by design. Not tested in production.
2. If the VDDA is below the VREFBUF operating voltage, the voltage reference buffer can not maintain accurately the output
voltage and it could drop down to VDDA - 150mV.
3. The temperature coefficient at VREF+ output is the sum of TCoeff_vrefint and TCoeff_vrefbuf.
4. The capacitive load must include a 100 nF capacitor in order to cut-off the high frequency noise.
5. To correctly control the VREFBUF inrush current during start-up phase and scaling change, the VDDA voltage should be in
the range [2.4 V to 3.6 V] and [2.8 V to 3.6 V] respectively for VRS = 0 and VRS = 1.

5.3.21 Comparator characteristics

Table 69. COMP characteristics(1)


Symbol Parameter Conditions Min Typ Max Unit

Analog supply
VDDA - 1.62 - 3.6 V
voltage
Comparator
VIN - 0 - VDDA V
input voltage range
VBG(2) Scaler input voltage - VREFINT V
VSC Scaler offset voltage - - ±5 ±10 mV
Scaler static BRG_EN=0 (bridge disable) - 200 300 nA
IDDA(SCALER) consumption from
VDDA BRG_EN=1 (bridge enable) - 0.8 1 µA

tSTART_SCALER Scaler startup time - - 100 200 µs

Comparator startup High-speed mode - - 5


time to reach
tSTART µs
propagation delay
specification Medium-speed mode - - 15

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124
Electrical characteristics STM32G0C1xC/xE

Table 69. COMP characteristics(1) (continued)


Symbol Parameter Conditions Min Typ Max Unit

200 mV step; High-speed mode - 30 50 ns


100 mV
overdrive Medium-speed mode - 0.3 0.6 µs
tD Propagation delay
>200 mV step; High-speed mode - - 70 ns
100 mV
overdrive Medium-speed mode - - 1.2 µs

Comparator offset
Voffset Full common mode range - ±5 ±20 mV
error
No hysteresis - 0 -

Comparator Low hysteresis - 10 -


Vhys mV
hysteresis Medium hysteresis - 20 -
High hysteresis - 30 -

Medium-speed Static - 5 7.5


mode; With 50 kHz and ±100 mV
No deglitcher - 6 -
overdrive square signal

Comparator Medium-speed Static - 7 10


IDDA(COMP) consumption from mode; With 50 kHz and ±100 mV µA
VDDA With deglitcher - 8 -
overdrive square signal
Static - 250 400
High-speed
mode With 50 kHz and ±100 mV
- 250 -
overdrive square signal
1. Specified by design. Not tested in production.
2. Refer to Table 27: Embedded internal voltage reference.

5.3.22 Temperature sensor characteristics

Table 70. TS characteristics


Symbol Parameter Min Typ Max Unit

TL(1) VTS linearity with temperature - ±1 ±2 °C


Avg_Slope(2) Average slope 2.3 2.5 2.7 mV/°C
V30 Voltage at 30°C (±5 °C)(3) 0.742 0.76 0.785 V

tSTART(TS_BUF)(1) Sensor Buffer Start-up time in continuous mode(4) - 8 15 µs

tSTART(1) Start-up time when entering in continuous mode(4) - 70 120 µs

tS_temp(1) ADC sampling time when reading the temperature 5 - - µs

Temperature sensor consumption from VDD, when


IDD(TS)(1) - 4.7 7 µA
selected by ADC
1. Specified by design. Not tested in production.
2. Based on characterization results, not tested in production.

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STM32G0C1xC/xE Electrical characteristics

3. Measured at VDDA = 3.0 V ±10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte.
4. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power sleep modes.

5.3.23 VBAT monitoring characteristics

Table 71. VBAT monitoring characteristics


Symbol Parameter Min Typ Max Unit

R Resistor bridge for VBAT - 39 - kΩ


Q Ratio on VBAT measurement - 3 - -
Er(1) Error on Q -10 - 10 %
(1)
tS_vbat ADC sampling time when reading the VBAT 12 - - µs
1. Specified by design. Not tested in production.

Table 72. VBAT charging characteristics


Symbol Parameter Conditions Min Typ Max Unit

Battery VBRS = 0 - 5 -
RBC charging kΩ
resistor VBRS = 1 - 1.5 -

5.3.24 Timer characteristics


The parameters given in the following tables are specified by design and not tested in
production. Refer to Section 5.3.14: I/O port characteristics for details on the input/output
alternate function characteristics (output compare, input capture, external clock, PWM
output).

Table 73. TIMx(1) characteristics


Symbol Parameter Conditions Min Max Unit

- 1 - tTIMxCLK
tres(TIM) Timer resolution time
fTIMxCLK = 64 MHz 15.625 - ns

Timer external clock frequency - 0 fTIMxCLK/2


fEXT MHz
on CH1 to CH4 fTIMxCLK = 64 MHz 0 40
TIMx (except TIM2) - 16 bit
ResTIM Timer resolution
TIM2 - 32
- 1 65536 tTIMxCLK
tCOUNTER 16-bit counter clock period
fTIMxCLK = 64 MHz 0.015625 1024 µs

Maximum possible count with - - 65536 × 65536 tTIMxCLK


tMAX_COUNT
32-bit counter fTIMxCLK = 64 MHz - 67.10 s
1. TIMx is used as a general term to refer to a timer (for example, TIM1).

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124
Electrical characteristics STM32G0C1xC/xE

Table 74. IWDG min/max timeout period at 32 kHz LSI clock(1)


Prescaler divider PR[2:0] bits Min timeout RL[11:0]= 0x000 Max timeout RL[11:0]= 0xFFF Unit

/4 0 0.125 512
/8 1 0.250 1024
/16 2 0.500 2048
/32 3 1.0 4096 ms
/64 4 2.0 8192
/128 5 4.0 16384
/256 6 or 7 8.0 32768
1. The exact timings further depend on the phase of the APB interface clock versus the LSI clock, which causes an
uncertainty of one RC period.

5.3.25 Characteristics of communication interfaces


I2C-bus interface characteristics
The I2C-bus interface meets timing requirements of the I2C-bus specification and user
manual rev. 03 for:
• Standard-mode (Sm): with a bit rate up to 100 kbit/s
• Fast-mode (Fm): with a bit rate up to 400 kbit/s
• Fast-mode Plus (Fm+): with a bit rate up to 1 Mbit/s.
The timings are ensured by design as long as the I2C peripheral is properly configured
(refer to the reference manual RM0444) and when the I2CCLK frequency is greater than the
minimum shown in the following table.

Table 75. Minimum I2CCLK frequency

Symbol Parameter Condition Typ Unit

Standard-mode 2
Analog filter enabled
9
DNF = 0
Fast-mode
Minimum I2CCLK Analog filter disabled
frequency for correct 9
fI2CCLK(min) DNF = 1 MHz
operation of I2C
peripheral Analog filter enabled
18
DNF = 0
Fast-mode Plus
Analog filter disabled
16
DNF = 1

The SDA and SCL I/O requirements are met with the following restrictions: the SDA and
SCL I/O pins are not “true” open-drain. When configured as open-drain, the PMOS
connected between the I/O pin and VDDIO1 is disabled, but is still present. Only FT_f I/O pins

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STM32G0C1xC/xE Electrical characteristics

support Fm+ low-level output current maximum requirement. Refer to Section 5.3.14: I/O
port characteristics for the I2C I/Os characteristics.
All I2C SDA and SCL I/Os embed an analog filter. Refer to the following table for its
characteristics:

Table 76. I2C analog filter characteristics(1)


Symbol Parameter Min Max Unit

Limiting duration of spikes suppressed


tAF 50 260 ns
by the filter(2)
1. Based on characterization results, not tested in production.
2. Spikes shorter than the limiting duration are suppressed.

SPI/I2S characteristics
Unless otherwise specified, the parameters given in Table 77 for SPI are derived from tests
performed under the ambient temperature, fPCLKx frequency and supply voltage conditions
summarized in Table 24: General operating conditions. The additional general conditions
are:
• OSPEEDRy[1:0] set to 11 (output speed)
• capacitive load C = 30 pF
• measurement points at CMOS levels: 0.5 x VDD
Refer to Section 5.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, SCK, MOSI, MISO for SPI).

Table 77. SPI characteristics(1)


Symbol Parameter Conditions Min Typ Max Unit

Master mode
1.65 < VDD < 3.6 V 32
Range 1
Master transmitter
1.65 < VDD < 3.6 V 32
Range 1
Slave receiver
1.65 < VDD < 3.6 V 32
fSCK Range 1
SPI clock frequency - - MHz
1/tc(SCK)
Slave transmitter/full duplex
2.7 < VDD < 3.6 V 32
Range 1
Slave transmitter/full duplex
1.65 < VDD < 3.6 V 23
Range 1
1.65 < VDD < 3.6 V
8
Range 2
tsu(NSS) NSS setup time Slave mode, SPI prescaler = 2 4 ₓ TPCLK - - ns
th(NSS) NSS hold time Slave mode, SPI prescaler = 2 2 ₓ TPCLK - - ns

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Electrical characteristics STM32G0C1xC/xE

Table 77. SPI characteristics(1) (continued)


Symbol Parameter Conditions Min Typ Max Unit

TPCLK TPCLK
tw(SCKH) SCK high time Master mode TPCLK ns
- 1.5 + 1.5
TPCLK TPCLK
tw(SCKL) SCK low time Master mode TPCLK ns
- 1.5 + 1.5
Master data input setup
tsu(MI) - 1 - - ns
time
Slave data input setup
tsu(SI) - 1 - - ns
time
Master data input hold
th(MI) - 5 - - ns
time
Slave data input hold
th(SI) - 1 - - ns
time
ta(SO) Data output access time Slave mode 9 - 34 ns
tdis(SO) Data output disable time Slave mode 9 - 16 ns
2.7 < VDD < 3.6 V
- 9 14
Range 1
Slave data output valid 1.65 < VDD < 3.6 V
tv(SO) - 9 21 ns
time Range 1
1.65 < VDD < 3.6 V
- 11 24
Voltage Range 2
Master data output valid
tv(MO) - - 3 5 ns
time
Slave data output hold
th(SO) - 5 - - ns
time
Master data output hold
th(MO) - 1 - - ns
time
1. Based on characterization results, not tested in production.

Figure 31. SPI timing diagram - slave mode and CPHA = 0

NSS input

tc(SCK) th(NSS)

tsu(NSS) tw(SCKH)
CPHA=0
SCK input

CPOL=0

CPHA=0
CPOL=1
ta(SO) tw(SCKL) tv(SO) th(SO) tdis(SO)

MISO output First bit OUT Next bits OUT Last bit OUT

tsu(SI) th(SI)

MOSI input First bit IN Next bits IN Last bit IN


118/163 DS13564 Rev 5
MSv41658V2
STM32G0C1xC/xE Electrical characteristics

Figure 32. SPI timing diagram - slave mode and CPHA = 1

NSS input

tc(SCK) th(NSS)
tsu(NSS) tw(SCKH)
CPHA=1
SCK input

CPOL=0

CPHA=1
CPOL=1
ta(SO) tw(SCKL) tv(SO) th(SO) tdis(SO)

MISO output First bit OUT Next bits OUT Last bit OUT

tsu(SI) th(SI)

MOSI input First bit IN Next bits IN Last bit IN

MSv41659V2

Figure 33. SPI timing diagram - master mode

High

NSS input
tc(SCK)
tw(SCKH)
CPHA=0
SCK output

CPOL=0

CPHA=0
CPOL=1
tw(SCKL)
CPHA=1
SCK output

CPOL=0

CPHA=1
CPOL=1
tsu(MI) th(MI)

MISO input First bit IN Next bits IN Last bit IN

MOSI output First bit OUT Next bits OUT Last bit OUT

tv(MO) th(MO)
MSv72626V1

Table 78. I2S characteristics(1)


Symbol Parameter Conditions Min Max Unit

fMCK= 256 x Fs; (Fs = audio sampling


fMCK I2S main clock output frequency) 2.048 49.152 MHz
Fsmin = 8 kHz; Fsmax = 192 kHz;
Master data - 64xFs
fCK I2S clock frequency MHz
Slave data - 64xFs

DS13564 Rev 5 119/163


124
Electrical characteristics STM32G0C1xC/xE

Table 78. I2S characteristics(1) (continued)


Symbol Parameter Conditions Min Max Unit

I2S clock frequency duty


DCK Slave receiver 30 70 %
cycle

tv(WS) WS valid time Master mode - 8

th(WS) WS hold time Master mode 2 -

tsu(WS) WS setup time Slave mode 4 -

th(WS) WS hold time Slave mode 2 -


tsu(SD_MR) Master receiver 4 -
Data input setup time
tsu(SD_SR) Slave receiver 5 -
th(SD_MR) Master receiver 4.5 -
Data input hold time
th(SD_SR) Slave receiver 2 - ns

after enable edge; 2.7 < VDD < 3.6V 16


Data output valid time -
tv(SD_ST) -
slave transmitter
after enable edge; 1.65 < VDD < 3.6V 23

Data output valid time -


tv(SD_MT) after enable edge - 5.5
master transmitter
Data output hold time -
th(SD_ST) after enable edge 8 -
slave transmitter
Data output hold time -
th(SD_MT) after enable edge 1 -
master transmitter
1. Based on characterization results, not tested in production.

Figure 34. I2S slave timing diagram (Philips protocol)

tc(CK)

CPOL = 0
CK Input

CPOL = 1

tw(CKH) tw(CKL) th(WS)

WS input

tsu(WS) tv(SD_ST) th(SD_ST)

SDtransmit LSB transmit(2) MSB transmit Bitn transmit

tsu(SD_SR) th(SD_SR)

SDreceive LSB receive(2) MSB receive Bitn receive LSB receive

MSv39721V1

1. Measurement points are done at CMOS levels: 0.3 VDDIO1 and 0.7 VDDIO1.
2. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.

120/163 DS13564 Rev 5


STM32G0C1xC/xE Electrical characteristics

Figure 35. I2S master timing diagram (Philips protocol)

90%
10%
tf(CK) tr(CK)

tc(CK)
CK output

CPOL = 0
tw(CKH)

CPOL = 1
tv(WS) tw(CKL) th(WS)

WS output

tv(SD_MT) th(SD_MT)

SDtransmit LSB transmit(2) MSB transmit Bitn transmit LSB transmit

tsu(SD_MR) th(SD_MR)

SDreceive LSB receive(2) MSB receive Bitn receive LSB receive

MSv39720V1

1. Based on characterization results, not tested in production.


2. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.

USART (SPI mode) characteristics


Unless otherwise specified, the parameters given in Table 79 for USART are derived from
tests performed under the ambient temperature, fPCLKx frequency and supply voltage
conditions summarized in Table 24: General operating conditions. The additional general
conditions are:
• OSPEEDRy[1:0] set to 10 (output speed)
• capacitive load C = 30 pF
• measurement points at CMOS levels: 0.5 x VDD
Refer to Section 5.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, CK, TX, and RX for USART).

Table 79. USART characteristics in SPI mode


Symbol Parameter Conditions Min Typ Max Unit

Master mode - - 8
fCK USART clock frequency MHz
Slave mode - - 21

DS13564 Rev 5 121/163


124
Electrical characteristics STM32G0C1xC/xE

Table 79. USART characteristics in SPI mode


Symbol Parameter Conditions Min Typ Max Unit
(1)
tsu(NSS) NSS setup time Slave mode Tker +2 - -
th(NSS) NSS hold time Slave mode 2 - -
tw(CKH) CK high time 1 / fCK / 2 1 / fCK / 2
Master mode 1 / fCK / 2
tw(CKL) CK low time -1 +1

Master mode Tker(1) + 2 - -


tsu(RX) Data input setup time
Slave mode 4 - -
ns
Master mode 1 - -
th(RX) Data input hold time
Slave mode 0.5 - -
Master mode - 0.5 1
tv(TX) Data output valid time
Slave mode - 10 19
Master mode 0 - -
th(TX) Data output hold time
Slave mode 7 - -
1. Tker is the usart_ker_ck_pres clock period

Figure 36. USART timing diagram in SPI master mode


1/fCK
tw(CKH)
CPHA=0
CK output

CPOL=0

CPHA=0
CPOL=1
tw(CKL)
CPHA=1
CK output

CPOL=0

CPHA=1
CPOL=1
tsu(RX) th(RX)

RX input MSB IN BIT6 IN LSB IN

TX output MSB OUT BIT1 OUT LSB OUT

tv(TX) th(TX) MSv65386V6

122/163 DS13564 Rev 5


STM32G0C1xC/xE Electrical characteristics

Figure 37. USART timing diagram in SPI slave mode


NSS input

1/fCK th(NSS)

tsu(NSS) tw(CKH)
CPHA=0
CPOL=0
CK input

CPHA=0
CPOL=1
tw(CKL) tv(TX) th(TX)

TX output First bit OUT Next bits OUT Last bit OUT

tsu(RX) th(RX)

RX input First bit IN Next bits IN Last bit IN

MSv65387V6

USB full speed (FS) characteristics


The STM32G0C1xC/xE USB interface is fully compliant with the USB specification version
2.0 and Battery charging rev 1.2 (primary and secondary detection).

Table 80. USB FS electrical characteristics


Symbol Parameter(1) Conditions Min(2) Typ Max(2) Unit

USB full speed transceiver


VDDIO2 - 3.0(3) - 3.6 V
operating voltage
tSTARTUP USB transceiver startup time - - - 1 µs
Pull down resistor on PA11,
RPD VIN = VDD 14.25 - 24.8 kΩ
PA12 (USB_FS_DP/DM)
Pull Up Resistor on PA12
VIN = VSS, during idle 0.9 1.25 1.575 kΩ
(USB_FS_DP)
RPU
Pull Up Resistor on PA12 VIN = VSS during
1.425 2.25 3.09 kΩ
(USB_FS_DP) reception
VCRS Output signal crossover voltage - 1.3 - 2.0 V
ZDRV Output driver impedance(4) Driving high or low 28 36 44 Ω
1. Specified by design. Not tested in production.
2. All the voltages are measured from the local ground potential.
3. The USB full speed transceiver functionality is ensured down to 2.7 V but not the full USB full speed
electrical characteristics which are degraded in the 2.7-to-3.0 V VDDIO2 voltage range.
4. No external termination series resistors are required on DP (D+) and DM (D-) pins as the matching
impedance is included in the embedded driver.

DS13564 Rev 5 123/163


124
Electrical characteristics STM32G0C1xC/xE

Figure 38. USB timings – definition of data signal rise and fall time

Cross over
points
Differential
data lines

VCRS

VSS

tf tr
ai14137b

UCPD characteristics
UCPD1 and UCPD2 controllers comply with USB Type-C Rev.2 and USB Power Delivery
Rev. 3.0 specifications.

Table 81. UCPD operating conditions


Symbol Parameter Conditions Min Typ Max Unit

UCPD operating supply Sink mode only 3.0 3.3 3.6


VDD
voltage Sink and source mode 3.135 3.3 3.465 V
Vswing Output voltage swing - 1.05 - 1.2
ZDRV Output driver impedance Driving high or low 33 - 75 Ω

CAN (controller area network) interface


Refer to Section 5.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics (FDCANx_TX and FDCANx_RX).

124/163 DS13564 Rev 5


STM32G0C1xC/xE Package information

6 Package information

In order to meet environmental requirements, ST offers these devices in different grades of


ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.

6.1 Device marking


Refer to technical note “Reference device marking schematics for STM32 microcontrollers
and microprocessors” (TN1433) available on www.st.com, for the location of pin 1 / ball A1
as well as the location and orientation of the marking areas versus pin 1 / ball A1.
Parts marked as “ES”, “E” or accompanied by an engineering sample notification letter, are
not yet qualified and therefore not approved for use in production. ST is not responsible for
any consequences resulting from such use. In no event will ST be liable for the customer
using any of these engineering samples in production. ST’s Quality department must be
contacted prior to any decision to use these engineering samples to run a qualification
activity.
A WLCSP simplified marking example (if any) is provided in the corresponding package
information subsection.

DS13564 Rev 5 125/163


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Package information STM32G0C1xC/xE

6.2 LQFP32 package information (5V)


This LQFP is a 32-pin, 7 x 7 mm, low-profile quad flat package.
Note: Figure 39 is not to scale.
Refer to the notes section for the list of notes on Figure 39 and Table 82.

Figure 39. LQFP32 - Outline

BOTTOM VIEW

2 1
(2)
(6) R1

D 1/4 H
R2

B
B-
N
O
TI
E 1/4

C
SE
B GAUGE PLANE
4x N/4 TIPS

0.25
aaa C A-B D bbb H A-B D 4x S
N B
L
3
(L1)
(1) (11)

SECTION A-A

(N – 4)x e (13)

C
A

A2 A1 b ddd C A-B D
0.05 (12) ccc C

D (4)
(9) (11)
(2) (5)
b WITH PLATING
D1
D (3)
(10)

(11) c
1
c1(11)
2 E 1/4
(3) A B
3
D 1/4
E1 E b1 BASE METAL
(6) (2) (4) (11)
(3) (5)

A A SECTION B-B
(Section A-A)

TOP VIEW 5V_LQFP32_ME_V1

126/163 DS13564 Rev 5


STM32G0C1xC/xE Package information

Table 82. LQFP32 - Mechanical data


millimeters inches(14)
Symbol
Min Typ Max Min Typ Max

θ 0° 3.5° 7° 0° 3.5° 7°

θ1 0° - - 0° - -

θ2 10° 12° 14° 10° 12° 14°

θ3 10° 12° 14° 10° 12° 14°


A - - 1.60 - - 0.0630
(12)
A1 0.05 - 0.15 0.0020 - 0.0059
A2 1.35 1.40 1.45 0.0531 0.0551 0.0571
b(9)(11) 0.30 0.37 0.45 0.0118 0.0146 0.0177
(11)
b1 0.30 0.35 0.40 0.0118 0.0128 0.0157
c(11) 0.09 - 0.20 0.0035 - 0.0079
c1(11) 0.09 - 0.16 0.0035 - 0.0063
(4)
D 9.00 BSC 0.3543 BSC
D1(2)(5) 7.00 BSC 0.2756 BSC
e 0.80 BSC 0.0315 BSC
E(4) 9.00 BSC 0.3543 BSC
E1(2)(5) 7.00 BSC 0.2756 BSC
L 0.45 0.60 0.75 0.0177 0.0236 0.0295
L1 1.00 REF 0.0394 REF
N(13) 32
R1 0.08 - - 0.0031 - -
R2 0.08 - 0.20 0.0031 - 0.0079
S 0.20 - - 0.0079 - -
aaa(1)(7)(15) 0.20 0.0079
(1)(7)(15)
bbb 0.20 0.0079
ccc(1)(7)(15) 0.10 0.0039
(1)(7)(15)
ddd 0.20 0.0079

DS13564 Rev 5 127/163


155
Package information STM32G0C1xC/xE

Notes:
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
2. The top package body size may be smaller than the bottom package size by as much
as 0.15 mm.
3. Datums A-B and D to be determined at datum plane H.
4. To be determined at the seating datum plane C.
5. Dimensions D1 and E1 do not include mold flash or protrusions. Allowable mold flash
or protrusions is “0.25 mm” per side. D1 and E1 are maximum plastic body size
dimensions including mold mismatch.
6. Details of pin 1 identifier are optional but must be located within the zone indicated.
7. All dimensions are in millimeters.
8. No intrusion is allowed inwards the leads.
9. Dimension b does not include a dambar protrusion. Allowable dambar protrusion shall
not cause the lead width to exceed the maximum “b” dimension by more than 0.08 mm.
Dambar cannot be located on the lower radius or the foot. The minimum space
between the protrusion and an adjacent lead is 0.07 mm for 0.4 mm and 0.5 mm pitch
packages.
10. The exact shape of each corner is optional.
11. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm
from the lead tip.
12. A1 is defined as the distance from the seating plane to the lowest point on the package
body.
13. N is the number of terminal positions for the specified body size.
14. Values in inches are converted from mm and rounded to four decimal digits.
15. Recommended values and tolerances.

128/163 DS13564 Rev 5


STM32G0C1xC/xE Package information

Figure 40. LQFP32 – Footprint example


0.45 0.8

32 25
1.2 REF
1 24

7.4

9.8
8 17

9 16

7.4

9.8

Soldering area

Solder resist opening


5V_LQFP32_FP_V4

1. Dimensions are expressed in millimeters.

DS13564 Rev 5 129/163


155
Package information STM32G0C1xC/xE

6.3 UFQFPN32 package information (A0B8)


This UFQFPN is a 32-pin, 5 x 5 mm, 0.5 mm pitch ultra thin fine pitch quad flat package.

Figure 41. UFQFPN32 - Outline

K fff CAB
D2 EXPOSED PAD

b
fff CAB

bbb CA B
ddd C

E2
e 2xR

Detail A
b
L
PIN 1 identifier

e L
Detail A

BOTTOM VIEW

A
ccc C
A1
SEATING
eee C PLANE
C

Detail B
FRONT VIEW
A1
B
PIN 1 identifier

Detail B
E

D A

TOP VIEW
A0B8_UFQFPN32_ME_V5

1. Drawing is not to scale.


2. All leads/pads should also be soldered to the PCB to improve the lead/pad solder joint life.
3. There is an exposed die pad on the underside of the UFQFPN package. It is recommended to connect and
solder this backside pad to PCB ground.

130/163 DS13564 Rev 5


STM32G0C1xC/xE Package information

Table 83. UFQFPN32 - Mechanical data


millimeters(1) inches(2)
Symbol
Min Typ Max Min Typ Max

A(3)(4) 0.50 0.55 0.60 0.0197 0.0217 0.0236


(5)
A1 0.00 - 0.05 0.000 - 0.0020
b(6) 0.18 0.25 0.30 0.0071 0.0098 0.0118
D(7) 5.00 BSC 0.1969 BSC
(8)
D2 See Table 85: Exposed pad variation
(7)
E 5.00 BSC 0.1969 BSC
E2(8) See Table 85: Exposed pad variation
e 0.50 BSC 0.0197 BSC
(9)
N 32
L 0.30 - 0.50 0.0118 - 0.0197
R 0.09 - - 0.0035 - -
1. All dimensions are in millimeters. Dimensioning and tolerancing schemes conform to ASME Y14.5M-2018
except European.
2. Values in inches are converted from mm and rounded to four decimal digits.
3. UFQFPN stands for ultra thin fine pitch quad flat package no lead: A ≤ 0.60 mm / Fine pitch e ≤ 1.00 mm.
4. The profile height, A, is the distance from the seating plane to the highest point on the package. It is
measured perpendicular to the seating plane.
5. A1 is the vertical distance from the bottom surface of the plastic body to the nearest metalized package
feature.
6. Dimension b applies to metalized terminal. If the terminal has the optional radius on the other end of the
terminal, the dimension b must not be measured in that radius area.
7. BSC stands for BASIC dimensions. It corresponds to the nominal value and has no tolerance. For
tolerances, refer to Table 84.
8. Dimensions D2 and E2 refer to the exposed pad. For variance, refer to Table 85.
9. N represents the total number of terminals.

Table 84. Tolerance of form and position


Symbol Millimeters(1) Inches(2)

aaa 0.15 0.0059


bbb 0.10 0.0039
ccc 0.10 0.0039
ddd 0.05 0.0020
eee 0.08 0.0315
fff 0.10 0.0039
1. All dimensions are in millimeters. Dimensioning and tolerancing schemes conform to ASME Y14.5M-2018
except European.
2. Values in inches are converted from mm and rounded to four decimal digits.

DS13564 Rev 5 131/163


155
Package information STM32G0C1xC/xE

Table 85. Exposed pad variation


D2 E2
Option
Min Typ Max Min Typ Max

1 3.40 3.50 3.60 3.40 3.50 3.60


2 3.50 3.60 3.70 3.50 3.60 3.70
3 3.60 3.70 3.80 3.60 3.70 3.80

Figure 42. UFQFPN32 - Footprint example


5.50

3.75

0.65

3.60

5.50 3.75

3.60
0.50
0.25

3.75
A0B8_UFQFPN32_FP_V1

1. Dimensions are expressed in millimeters.

132/163 DS13564 Rev 5


STM32G0C1xC/xE Package information

6.4 LQFP48 package information (5B)


This LQFP is a 48-pin, 7 x 7 mm low-profile quad flat package.
Note: See list of notes in the notes section.

Figure 43. LQFP48 - Outline(15)


BOTTOM VIEW

4x N/4 TIPS
aaa C A-B D
2 1
(2)
R1

H
R2

B
B-
D 1/4

N
O
(6)

TI
C
SE
B GAUGE PLANE
E 1/4

0.25
S
B
bbb H A-B D 4x
L
3
(13) (L1)
0.05 (N – 4)x e (1) (11)

A A2 C SECTION A-A

(12) ccc C
A1 ddd C A-B D
b
D (4)
(2) (5)
D1
(10) D (3) (9) (11)
N b WITH PLATING

1
2 E 1/4
(3) A 3
(6) B (3)
D 1/4 c c1
E1 E (11) (11)
(2) (4)
(5)
A A b1 BASE METAL
(Section A-A) (11)

SECTION B-B

TOP VIEW

5B_LQFP48_ME_V1

DS13564 Rev 5 133/163


155
Package information STM32G0C1xC/xE

Table 86. LQFP48 - Mechanical data


millimeters inches(14)
Symbol
Min Typ Max Min Typ Max

A - - 1.60 - - 0.0630
(12)
A1 0.05 - 0.15 0.0020 - 0.0059
A2 1.35 1.40 1.45 0.0531 0.0551 0.0571
(9)(11)
b 0.17 0.22 0.27 0.0067 0.0087 0.0106
(11)
b1 0.17 0.20 0.23 0.0067 0.0079 0.0090
(11)
c 0.09 - 0.20 0.0035 - 0.0079
c1(11) 0.09 - 0.16 0.0035 - 0.0063
(4)
D 9.00 BSC 0.3543 BSC
(2)(5)
D1 7.00 BSC 0.2756 BSC
E(4) 9.00 BSC 0.3543 BSC
E1(2)(5) 7.00 BSC 0.2756 BSC
e 0.50 BSC 0.1970 BSC
L 0.45 0.60 0.75 0.0177 0.0236 0.0295
L1 1.00 REF 0.0394 REF
N(13) 48
θ 0° 3.5° 7° 0° 3.5° 7°

θ1 0° - - 0° - -

θ2 10° 12° 14° 10° 12° 14°

θ3 10° 12° 14° 10° 12° 14°


R1 0.08 - - 0.0031 - -
R2 0.08 - 0.20 0.0031 - 0.0079
S 0.20 - - 0.0079 - -
aaa(1)(7) 0.20 0.0079
(1)(7)
bbb 0.20 0.0079
ccc(1)(7) 0.08 0.0031
(1)(7)
ddd 0.08 0.0031

134/163 DS13564 Rev 5


STM32G0C1xC/xE Package information

Notes:
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
2. The Top package body size may be smaller than the bottom package size by as much
as 0.15 mm.
3. Datums A-B and D to be determined at datum plane H.
4. To be determined at seating datum plane C.
5. Dimensions D1 and E1 do not include mold flash or protrusions. Allowable mold flash
or protrusions is “0.25 mm” per side. D1 and E1 are Maximum plastic body size
dimensions including mold mismatch.
6. Details of pin 1 identifier are optional but must be located within the zone indicated.
7. All Dimensions are in millimeters.
8. No intrusion allowed inwards the leads.
9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall
not cause the lead width to exceed the maximum “b” dimension by more than 0.08 mm.
Dambar cannot be located on the lower radius or the foot. Minimum space between
protrusion and an adjacent lead is 0.07 mm for 0.4 mm and 0.5 mm pitch packages.
10. Exact shape of each corner is optional.
11. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm
from the lead tip.
12. A1 is defined as the distance from the seating plane to the lowest point on the package
body.
13. “N” is the number of terminal positions for the specified body size.
14. Values in inches are converted from mm and rounded to 4 decimal digits.
15. Drawing is not to scale.

Figure 44. LQFP48 - Footprint example


0.50
1.20

36 25
37 24 0.30

0.20

9.70 7.30

48 13
1 12

5.80

9.70
5B_LQFP48_FP_V1

1. Dimensions are expressed in millimeters.

DS13564 Rev 5 135/163


155
Package information STM32G0C1xC/xE

6.5 UFQFPN48 package information (A0B9)


This UFQFPN is a 48-lead, 7 x 7 mm, 0.5 mm pitch, ultra thin fine pitch quad flat package.

Figure 45. UFQFPN48 – Outline


D1 EXPOSED PAD

E2 E1
e

PIN 1 idenfier
L
D2
BOTTOM VIEW
A
A3
A1
SEATING PLANE

C
DETAIL A
ddd C
LEADS COPLANARITY
FRONT VIEW

A1 A
SEATING PLANE

ddd C
PIN 1 IDENTIFIER C
LASER MAKER AREA

TOP VIEW

A0B9_UFQFPN48_ME_V4

1. Drawing is not to scale.


2. All leads/pads should also be soldered to the PCB to improve the lead/pad solder joint life.
3. There is an exposed die pad on the underside of the UFQFPN48 package. It is recommended to connect
and solder this back-side pad to PCB ground.

136/163 DS13564 Rev 5


STM32G0C1xC/xE Package information

Table 87. UFQFPN48 – Mechanical data


millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A 0.500 0.550 0.600 0.0197 0.0217 0.0236


A1 0.000 0.020 0.050 0.0000 0.0008 0.0020
A3 - 0.152 - - 0.0060 -
b 0.200 0.250 0.300 0.0079 0.0098 0.0118
(2)
D 6.900 7.000 7.100 0.2717 0.2756 0.2795
D1 5.400 5.500 5.600 0.2126 0.2165 0.2205
D2(3) 5.500 5.600 5.700 0.2165 0.2205 0.2244
(2)
E 6.900 7.000 7.100 0.2717 0.2756 0.2795
E1 5.400 5.500 5.600 0.2126 0.2165 0.2205
E2(3) 5.500 5.600 5.700 0.2165 0.2205 0.2244
e - 0.500 - - 0.0197 -
L 0.300 0.400 0.500 0.0118 0.0157 0.0197
ddd - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to four decimal digits.
2. Dimensions D and E do not include mold protrusion, not exceed 0.15 mm.
3. Dimensions D2 and E2 are not in accordance with JEDEC.

Figure 46. UFQFPN48 – Footprint example


7.30

6.20

48 37

1 36

0.20 5.60

7.30
5.80
6.20

5.60
0.30

12 25

13 24

0.50 0.75
0.55
5.80 A0B9_UFQFPN48_FP_V3

1. Dimensions are expressed in millimeters.

DS13564 Rev 5 137/163


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Package information STM32G0C1xC/xE

6.6 WLCSP52 package information


This WLCSP is a 52 balls, 3.09 x 3.15 mm, 0.4 mm pitch, wafer level chip scale package.

Figure 47. WLCSP52 - Outline


bbb Z
A1 BALL ORIENTATION A1
G
13 12 11 10 9 8 7 6 5 4 3 2 1

e2 D
E
E

DETAIL B A
F e1
D A2
aaa
(4x)

BOTTOM VIEW TOP VIEW SIDE VIEW

BUMP

DETAIL A

A2 eee Z

Z
b(52x)
ccc ZXY
ddd Z SEATING PLANE
FRONT VIEW
DETAIL A DETAIL B

B0BG_WLCSP52_ME_V1

1. Drawing is not to scale.


2. Dimension is measured at the maximum bump diameter parallel to primary datum Z.
3. Primary datum Z and seating plane are defined by the spherical crowns of the bump.
4. Bump position designation per JESD 95-1, SPP-010.
Table 88. WLCSP52 - Mechanical data
millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A(2) - - 0.58 - - 0.023


A1 - 0.17 - - 0.007 -
A2 - 0.38 - - 0.015 -
(3)
A3 - 0.025 - - 0.001 -
b 0.23 0.26 0.28 0.009 0.010 0.011
D 3.06 3.09 3.12 0.120 0.122 0.123

138/163 DS13564 Rev 5


STM32G0C1xC/xE Package information

Table 88. WLCSP52 - Mechanical data (continued)


millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

E 3.12 3.15 3.18 0.123 0.124 0.125


e - 0.40 - - 0.016 -
e1 - 2.40 - - 0.094 -
e2 - 2.42 - - 0.095 -
F(4) - 0.35 - - 0.014 -
(4)
G - 0.36 - - 0.014 -
aaa - - 0.10 - - 0.004
bbb - - 0.10 - - 0.004
ccc - - 0.10 - - 0.004
ddd - - 0.05 - - 0.002
eee - - 0.05 - - 0.002
1. Values in inches are converted from mm and rounded to 3 decimal digits.
2. The maximum total package height is calculated by the RSS method (Root Sum Square) using nominal
and tolerances values of A1 and A2.
3. Back side coating. Nominal dimension is rounded to the 3rd decimal place resulting from process
capability.
4. Calculated dimensions are rounded to the 3rd decimal place

Figure 48. WLCSP52 - Recommended footprint

Dpad

Dsm
BGA_WLCSP_FT_V1

Table 89. WLCSP52 - Recommended PCB design rules


Dimension Recommended values

Pitch 0.4 mm
Dpad 0,225 mm
Dsm 0.290 mm typ. (depends on soldermask registration tolerance)

DS13564 Rev 5 139/163


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Package information STM32G0C1xC/xE

Table 89. WLCSP52 - Recommended PCB design rules


Dimension Recommended values

Stencil opening 0.250 mm


Stencil thickness 0.100 mm

6.7 Device marking


The following figure gives an example of topside marking orientation versus ball A1 identifier
location.
The printed markings may differ depending on the supply chain.
Other optional marking or inset/upset marks that identify the parts throughout supply chain
operations, are not indicated below.

Figure 49. WLCSP52 package marking example

Ball A1 identifier

Product identification (1) G0C1E6

Date code

Revision code

Y WW R

MSv66140V2

140/163 DS13564 Rev 5


STM32G0C1xC/xE Package information

6.8 LQFP64 package information (5W)


This LQFP is 64-pin, 10 x 10 mm low-profile quad flat package.
Note: See list of notes in the notes section.

Figure 50. LQFP64 - Outline(15)

BOTTOM VIEW

2 1
(2)
R1

H
R2

B
B-
N
O
TI
C
SE
B GAUGE PLANE
D 1/4

0.25
(6)
S
B
L
4x N/4 TIPS
E 1/4 3
(L1)
aaa C A-B D (1) (11)
bbb H A-B D 4x
SECTION A-A

(13) (N – 4)x e

C
A
0.05
A2 A1 (12)
b
ddd C A-B D ccc C

D (4)

(5) (2) D1 (9) (11)

(10)
D (3) b WITH PLATING
N (4)

1 E 1/4 (11) (11)


2
3 c c1
(3) A (6) B (3) (5)
D 1/4 (2)
E1 E b1 BASE METAL
(11)

A A SECTION B-B
(Section A-A)

TOP VIEW 5W_LQFP64_ME_V1

DS13564 Rev 5 141/163


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Package information STM32G0C1xC/xE

Table 90. LQFP64 - Mechanical data


millimeters inches(14)
Symbol
Min Typ Max Min Typ Max

A - - 1.60 - - 0.0630
(12)
A1 0.05 - 0.15 0.0020 - 0.0059
A2 1.35 1.40 1.45 0.0531 0.0551 0.0570
(9)(11)
b 0.17 0.22 0.27 0.0067 0.0087 0.0106
(11)
b1 0.17 0.20 0.23 0.0067 0.0079 0.0091
(11)
c 0.09 - 0.20 0.0035 - 0.0079
c1(11) 0.09 - 0.16 0.0035 - 0.0063
(4)
D 12.00 BSC 0.4724 BSC
(2)(5)
D1 10.00 BSC 0.3937 BSC
E(4) 12.00 BSC 0.4724 BSC
E1(2)(5) 10.00 BSC 0.3937 BSC
e 0.50 BSC 0.1970 BSC
L 0.45 0.60 0.75 0.0177 0.0236 0.0295
L1 1.00 REF 0.0394 REF
N(13) 64
q 0° 3.5° 7° 0° 3.5° 7°
q1 0° - - 0° - -
q2 10° 12° 14° 10° 12° 14°
q3 10° 12° 14° 10° 12° 14°
R1 0.08 - - 0.0031 - -
R2 0.08 - 0.20 0.0031 - 0.0079
S 0.20 - - 0.0079 - -
aaa(1) 0.20 0.0079
bbb(1) 0.20 0.0079
(1)
ccc 0.08 0.0031
(1)
ddd 0.08 0.0031

142/163 DS13564 Rev 5


STM32G0C1xC/xE Package information

Notes:
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
2. The Top package body size may be smaller than the bottom package size by as much
as 0.15 mm.
3. Datums A-B and D to be determined at datum plane H.
4. To be determined at seating datum plane C.
5. Dimensions D1 and E1 do not include mold flash or protrusions. Allowable mold flash
or protrusions is “0.25 mm” per side. D1 and E1 are Maximum plastic body size
dimensions including mold mismatch.
6. Details of pin 1 identifier are optional but must be located within the zone indicated.
7. All Dimensions are in millimeters.
8. No intrusion allowed inwards the leads.
9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall
not cause the lead width to exceed the maximum “b” dimension by more than 0.08 mm.
Dambar cannot be located on the lower radius or the foot. Minimum space between
protrusion and an adjacent lead is 0.07 mm for 0.4 mm and 0.5 mm pitch packages.
10. Exact shape of each corner is optional.
11. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm
from the lead tip.
12. A1 is defined as the distance from the seating plane to the lowest point on the package
body.
13. “N” is the number of terminal positions for the specified body size.
14. Values in inches are converted from mm and rounded to 4 decimal digits.
15. Drawing is not to scale.

Figure 51. LQFP64 - Footprint example

48 33

0.30
49 0.5 32

12.70

10.30

10.30
64 17

1.20
1 16

7.80

12.70
5W_LQFP64_FP_V2

1. Dimensions are expressed in millimeters.

DS13564 Rev 5 143/163


155
Package information STM32G0C1xC/xE

6.9 UFBGA64 package information (A019)


This UFBGA is a 64-ball, 5 x 5 mm, 0.5 mm pitch ultra profile fine pitch ball grid array
package.
Note: See list of notes in the notes section.

Figure 52. UFBGA64 – Outline(13)


E1

e SE

H
G
SD F
E e
D1
D
C
B
A

1 2 3 4 5 6 7 8
Øb (N balls)
A1 ball pad corner Ø eee M C A B
Ø fff M C
Mold resin
ccc C

Substrate

Detail A A
SIDE VIEW Seating plane

(8)

A1 A2
B C
E A Detail A
A1 ball pad corner ddd C
(9) Solder balls

(DATUM A)

(DATUM B)

aaa C
TOP VIEW (4X)
A019_UFBGA64_ME_V2

144/163 DS13564 Rev 5


STM32G0C1xC/xE Package information

Table 91. UFBGA64 – Mechanical data


millimeters(1) inches(12)
Symbol
Min Typ Max Min Typ Max

A(2)(3) - - 0.60 - - 0.0236


(4)
A1 0.05 - - 0.0020 - -
A2 - 0.43 - - 0.0169 -
(5)
b 0.23 0.28 0.33 0.0090 0.0110 0.0130
(6)
D 5.00 BSC 0.1969 BSC
D1 3.50 BSC 0.1378 BSC
E 5.00 BSC 0.1969 BSC
E1 3.50 BSC 0.1378 BSC
(9)
e 0.50 BSC 0.0197 BSC
N(11) 64
SD(12) 0.25 BSC 0.0098 BSC
SE(12) 0.25 BSC 0.0098 BSC
aaa 0.15 0.0059
ccc 0.20 0.0079
ddd 0.08 0.0031
eee 0.15 0.0059
fff 0.05 0.0020

Notes:
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-2009 apart
European projection.
2. UFBGA stands for ultra profile fine pitch ball grid array: 0.5 mm < A ≤ 0.65 mm / fine
pitch e < 1.00 mm.
3. The profile height, A, is the distance from the seating plane to the highest point on the
package. It is measured perpendicular to the seating plane.
4. A1 is defined as the distance from the seating plane to the lowest point on the package
body.
5. Dimension b is measured at the maximum diameter of the terminal (ball) in a plane
parallel to primary datum C.
6. BSC stands for BASIC dimensions. It corresponds to the nominal value and has no
tolerance. For tolerances refer to form and position table. On the drawing these
dimensions are framed.
7. Primary datum C is defined by the plane established by the contact points of three or
more solder balls that support the device when it is placed on top of a planar surface.
8. The terminal (ball) A1 corner must be identified on the top surface of the package by
using a corner chamfer, ink or metalized markings, or other feature of package body or

DS13564 Rev 5 145/163


155
Package information STM32G0C1xC/xE

integral heat slug. A distinguish feature is allowable on the bottom surface of the
package to identify the terminal A1 corner. Exact shape of each corner is optional.
9. e represents the solder ball grid pitch.
10. N represents the total number of balls on the BGA.
11. Basic dimensions SD and SE are defined with respect to datums A and B. It defines the
position of the centre ball(s) in the outer row or column of a fully populated matrix.
12. Values in inches are converted from mm and rounded to 4 decimal digits.
13. Drawing is not to scale.

Figure 53. UFBGA64 – Footprint example

Dpad

Dsm
BGA_WLCSP_FT_V1

Table 92. UFBGA64 - Example of PCB design rules (0.5 mm pitch BGA)
Dimension Values

Pitch 0.5 mm
Dpad 0.280 mm
0.370 mm typ. (depends on the soldermask
Dsm
registration tolerance)
Stencil opening 0.280 mm
Stencil thickness Between 0.100 mm and 0.125 mm
Pad trace width 0.100 mm

146/163 DS13564 Rev 5


STM32G0C1xC/xE Package information

6.10 LQFP80 package information (9X)


This LQFP is a 80 pin, 12 x 12 mm low-profile quad flat package.
Note: See list of notes in the notes section.

Figure 54. LQFP80 - Outline(15)

BOTTOM VIEW

2 1
(2)
R1
R2

B
H

B-
N
O
TI
C
SE
B GAUGE PLANE

0.25
S
D 1/4 (6) B
L
3
(L1) (1) (11)
E 1/4
4x N/4 TIPS SECTION A-A
aaa C A-B D bbb H A-B D 4x

(N – 4)x e (13)
C
A
(9) (11)
0.05 A2 A1(12) b ddd C A-B D ccc C b WITH
PLATING
D (4)
(2) (5) D1
D (3) (11) (11)
(10)
N c c1
(4)

1
2
3
E 1/4 b1 BASE METAL
(11)
(3)
(3) A (6) B SECTION B-B
D 1/4
E1 E
(2)
(5)

A A
(Section A-A)

TOP VIEW
9X_LQFP80_ME_V2

DS13564 Rev 5 147/163


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Package information STM32G0C1xC/xE

Table 93. LQFP80 - Mechanical data


mm inches(14)
Dim.
Min Typ Max Min Typ Max

A - - 1.60 - - 0.0630
(12)
A1 0.05 - 0.15 0.0020 - 0.0059
A2 1.35 1.40 1.45 0.0531 0.0551 0.0571
(9)(11)
b 0.17 0.22 0.27 0.0067 0.0087 0.0106
(11)
b1 0.17 0.20 0.23 0.0067 0.0078 0.0090
(11)
c 0.09 - 0.20 0.0038 - 0.0067
c1(11) 0.09 - 0.16 0.0038 - 0.0063
D 14.00 BSC 0.5512 BSC
D1 12.00 BSC 0.4724 BSC
E 14.00 BSC 0.5512 BSC
E1 12.00 BSC 0.4724 BSC
e 0.50 BSC 0.0197 BSC
L 0.45 0.60 0.75 0.0177 0.0236 0.0295
L1 1.00 REF 0.0394 REF
N(13) 80
θ 0° 3.5° 7° 0° 3.5° 7°

θ1 0° - - 0° - -

θ2 10° 12° 14° 10° 12° 14°

θ3 10° 12° 14° 10° 12° 14°


R1 0.08 - - 0.0031 - -
R2 0.08 - 0.20 0.0031 - 0.0079
S 0.20 - - 0.0079 - -
aaa(1) 0.20 0.0079
(1)
bbb 0.20 0.0079
ccc(1) 0.08 0.0031
(1)
ddd 0.08 0.0031

148/163 DS13564 Rev 5


STM32G0C1xC/xE Package information

Notes:
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
2. The Top package body size may be smaller than the bottom package size by as much
as 0.15 mm.
3. Datums A-B and D to be determined at datum plane H.
4. To be determined at seating datum plane C.
5. Dimensions D1 and E1 do not include mold flash or protrusions. Allowable mold flash
or protrusions is “0.25 mm” per side. D1 and E1 are Maximum plastic body size
dimensions including mold mismatch.
6. Details of pin 1 identifier are optional but must be located within the zone indicated.
7. All Dimensions are in millimeters.
8. No intrusion allowed inwards the leads.
9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall
not cause the lead width to exceed the maximum “b” dimension by more than 0.08 mm.
Dambar cannot be located on the lower radius or the foot. Minimum space between
protrusion and an adjacent lead is 0.07 mm for 0.4 mm and 0.5 mm pitch packages.
10. Exact shape of each corner is optional.
11. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm
from the lead tip.
12. A1 is defined as the distance from the seating plane to the lowest point on the package
body.
13. “N” is the number of terminal positions for the specified body size.
14. Values in inches are converted from mm and rounded to 4 decimal digits.
15. Drawing is not to scale.

Figure 55. LQFP80 - Footprint example

0.5
1.25
0.3
14.70

12.30

1.2

9.80

14.70
9X_LQFP80_FP

1. Dimensions are expressed in millimeters.

DS13564 Rev 5 149/163


155
Package information STM32G0C1xC/xE

6.11 LQFP100 package information (1L)


This LQFP is 100 lead, 14 x 14 mm low-profile quad flat package.
Note: See list of notes in the notes section.

Figure 56. LQFP100 - Outline(15)

ș2 ș
(2)
R1

H
R2

B
B-
N
O
(6)

TI
C
SE
D1/4 B GAUGE PLANE

S
E1/4
B ș
4x N/4 TIPS
ș L
4x (L1)
aaa C A-B D
bbb H A-B D (1) (11)

BOTTOM VIEW SECTION A-A

(N-4) x e (13)

C
A (9) (11)
0.05
ccc C b WITH PLATING
A2 A1 b aaa C A-BD
(12)

SIDE VIEW

D (4)
(11) c
(2) (5) D1 c1 (11)

D (3)
(10) (4)
N

b1 BASE METAL
1 (11)
2
3 E1/4 SECTION B-B

D1/4 (6) (2)


A B
(5)

E1 E

SECTION A-A

A A

TOP VIEW 1L_LQFP100_ME_V3

150/163 DS13564 Rev 5


STM32G0C1xC/xE Package information

Table 94. LQFP100 - Mechanical data


millimeters inches(14)
Symbol
Min Typ Max Min Typ Max

A - 1.50 1.60 - 0.0590 0.0630


(12)
A1 0.05 - 0.15 0.0019 - 0.0059
A2 1.35 1.40 1.45 0.0531 0.0551 0.0570
(9)(11)
b 0.17 0.22 0.27 0.0067 0.0087 0.0106
(11)
b1 0.17 0.20 0.23 0.0067 0.0079 0.0090
(11)
c 0.09 - 0.20 0.0035 - 0.0079
c1(11) 0.09 - 0.16 0.0035 - 0.0063
(4)
D 16.00 BSC 0.6299 BSC
(2)(5)
D1 14.00 BSC 0.5512 BSC
E(4) 16.00 BSC 0.6299 BSC
E1(2)(5) 14.00 BSC 0.5512 BSC
e 0.50 BSC 0.0197 BSC
L 0.45 0.60 0.75 0.177 0.0236 0.0295
(1)(11)
L1 1.00 - 0.0394 -
N(13) 100
θ 0° 3.5° 7° 0° 3.5° 7°

θ1 0° - - 0° - -

θ2 10° 12° 14° 10° 12° 14°

θ3 10° 12° 14° 10° 12° 14°


R1 0.08 - - 0.0031 - -
R2 0.08 - 0.20 0.0031 - 0.0079
S 0.20 - - 0.0079 - -
aaa(1) 0.20 0.0079
(1)
bbb 0.20 0.0079
ccc(1) 0.08 0.0031
(1)
ddd 0.08 0.0031

DS13564 Rev 5 151/163


155
Package information STM32G0C1xC/xE

Notes:
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
2. The Top package body size may be smaller than the bottom package size by as much
as 0.15 mm.
3. Datums A-B and D to be determined at datum plane H.
4. To be determined at seating datum plane C.
5. Dimensions D1 and E1 do not include mold flash or protrusions. Allowable mold flash
or protrusions is “0.25 mm” per side. D1 and E1 are Maximum plastic body size
dimensions including mold mismatch.
6. Details of pin 1 identifier are optional but must be located within the zone indicated.
7. All Dimensions are in millimeters.
8. No intrusion allowed inwards the leads.
9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall
not cause the lead width to exceed the maximum “b” dimension by more than 0.08 mm.
Dambar cannot be located on the lower radius or the foot. Minimum space between
protrusion and an adjacent lead is 0.07 mm for 0.4 mm and 0.5 mm pitch packages.
10. Exact shape of each corner is optional.
11. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm
from the lead tip.
12. A1 is defined as the distance from the seating plane to the lowest point on the package
body.
13. “N” is the number of terminal positions for the specified body size.
14. Values in inches are converted from mm and rounded to 4 decimal digits.
15. Drawing is not to scale.

Figure 57. LQFP100 - Footprint example


75 51

76 50
0.5

0.3

16.7 14.3

100 26

1.2
1 25

12.3

16.7

1L_LQFP100_FP_V1

1. Dimensions are expressed in millimeters.

152/163 DS13564 Rev 5


STM32G0C1xC/xE Package information

6.12 UFBGA100 package information (A0C2)


This UFBGA is a 100-ball, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball grid array package.
Note: See list of notes in the notes section.

Figure 58. UFBGA100 - Outline(13)

E1

e SE

M
L
K
SD J
H
G
D1
F
E
D
C
e
B
A

A1 ball pad 1 2 3 4 5 6 7 8 9 10 11 12
corner Øb (N balls)
BOTTOM VIEW Ø eee M C A B
Ø fff M C

DETAIL A

Mold resin
A ccc C
SIDE VIEW
C
Substrate

B E
A
A1 ball pad
corner
(9)
Seating plane
(8)

(DATUM A) A1 A2
C
Detail A
D ddd C
Solder balls

(DATUM B)

aaa C
TOP VIEW (4X)
A0C2_UFBGA_ME_V8

DS13564 Rev 5 153/163


155
Package information STM32G0C1xC/xE

Table 95. UFBGA100 - Mechanical data


millimeters(1) inches(12)
Symbol
Min. Typ. Max. Min. Typ. Max.

A(2)(3) - - 0.60 - - 0.0236


(4)
A1 0.05 - - 0.0020 - -
A2 - 0.43 - - 0.0169 -
(5)
b 0.23 0.28 0.33 0.0090 0.0110 0.0130
(6)
D 7.00 BSC 0.2756 BSC
D1 5.50 BSC 0.2165 BSC
E 7.00 BSC 0.2756 BSC
E1 5.50 BSC 0.2165 BSC
(9)
e 0.50 BSC 0.0197 BSC
N(11) 100
SD(12) 0.25 BSC 0.0098 BSC
SE(12) 0.25 BSC 0.0098 BSC
aaa 0.15 0.0059
ccc 0.20 0.0079
ddd 0.08 0.0031
eee 0.15 0.0059
fff 0.05 0.0020

Notes:
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-2009 apart
European projection.
2. UFBGA stands for ulta profile fine pitch ball grid array: 0.50 mm < A ≤ 0.65 mm / fine
pitch e < 1.00 mm.
3. The profile height, A, is the distance from the seating plane to the highest point on the
package. It is measured perpendicular to the seating plane.
4. A1 is defined as the distance from the seating plane to the lowest point on the package
body.
5. Dimension b is measured at the maximum diameter of the terminal (ball) in a plane
parallel to primary datum C.
6. BSC stands for BASIC dimensions. It corresponds to the nominal value and has no
tolerance. For tolerances refer to form and position table. On the drawing these
dimensions are framed.
7. Primary datum C is defined by the plane established by the contact points of three or
more solder balls that support the device when it is placed on top of a planar surface.
8. The terminal (ball) A1 corner must be identified on the top surface of the package by
using a corner chamfer, ink or metalized markings, or other feature of package body or

154/163 DS13564 Rev 5


STM32G0C1xC/xE Package information

integral heat slug. A distinguish feature is allowable on the bottom surface of the
package to identify the terminal A1 corner. Exact shape of each corner is optional.
9. e represents the solder ball grid pitch.
10. N represents the total number of balls on the BGA.
11. Basic dimensions SD and SE are defined with respect to datums A and B. It defines the
position of the centre ball(s) in the outer row or column of a fully populated matrix.
12. Values in inches are converted from mm and rounded to 4 decimal digits.
13. Drawing is not to scale.

Figure 59. UFBGA100 - Footprint example

Dpad

Dsm
BGA_WLCSP_FT_V1

Table 96. UFBGA100 - Example of PCB design rules (0.5 mm pitch BGA)
Dimension Values

Pitch 0.50 mm
Dpad 0.280 mm
0.370 mm typ. (depends on the solder mask
Dsm
registration tolerance)
Stencil opening 0.280 mm
Stencil thickness Between 0.100 mm and 0.125 mm

DS13564 Rev 5 155/163


155
STM32G0C1xC/xE

6.13 Thermal characteristics


The operating junction temperature TJ must never exceed the maximum given in
Table 24: General operating conditions
The maximum junction temperature in °C that the device can reach if respecting the
operating conditions, is:
TJ(max) = TA(max) + PD(max) x ΘJA
where:
• TA(max) is the maximum operating ambient temperature in °C,
• ΘJA is the package junction-to-ambient thermal resistance, in °C/W,
• PD = PINT + PI/O,
– PINT is power dissipation contribution from product of IDD and VDD
– PI/O is power dissipation contribution from output ports where:
PI/O = Σ (VOL × IOL) + Σ ((VDDIO1 – VOH) × IOH),
taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high
level in the application.

Table 97. Package thermal characteristics


Symbol Parameter Package Value Unit

LQFP100 14 × 14 mm 47

UFBGA100 7 × 7 mm 48

LQFP80 12 x 12 mm 51

LQFP64 10 × 10 mm 53

Thermal resistance UFBGA64 5 × 5 mm 51


ΘJA °C/W
junction-ambient WLCSP52 3.09 × 3.15 mm 55

LQFP48 7 × 7 mm 59

UFQFPN48 7 × 7 mm 28

LQFP32 7 × 7 mm 59

UFQFPN32 5 × 5 mm 35

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Table 97. Package thermal characteristics (continued)


Symbol Parameter Package Value Unit

LQFP100 14 × 14 mm 23

UFBGA100 7 × 7 mm 30

LQFP80 12 x 12 mm 24

LQFP64 10 × 10 mm 25

Thermal resistance UFBGA64 5 × 5 mm 32


ΘJB °C/W
junction-board WLCSP52 3.09 × 3.15 mm 23

LQFP48 7 × 7 mm 27

UFQFPN48 7 × 7 mm 12

LQFP32 7 × 7 mm 27

UFQFPN32 5 × 5 mm 20

LQFP100 14 × 14 mm 9

UFBGA100 7 × 7 mm 12

LQFP80 12 x 12 mm 10

LQFP64 10 × 10 mm 11

Thermal resistance UFBGA64 5 × 5 mm 32


ΘJC °C/W
junction-case WLCSP52 3.09 × 3.15 mm 3

LQFP48 7 × 7 mm 13

UFQFPN48 7 × 7 mm 9

LQFP32 7 × 7 mm 13

UFQFPN32 5 × 5 mm 14

6.13.1 Reference document


JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural
Convection (still air). Available from www.jedec.org.

6.13.2 Selecting the product temperature range


The temperature range is specified in the ordering information scheme shown in Section 7:
Ordering information.
Each temperature range suffix corresponds to a specific guaranteed ambient temperature at
maximum dissipation and to a specific maximum junction temperature.
As applications do not commonly use microcontrollers at their maximum power
consumption, it is useful to calculate the exact power consumption and junction temperature
to determine which temperature range best suits the application.

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The following example shows how to calculate the temperature range needed for a given
application.

Example:
Assuming the following worst application conditions:
• ambient temperature TA = 50 °C (measured according to JESD51-2)
• IDD = 50 mA; VDD = 3.6 V
• 20 I/Os simultaneously used as output at low level with IOL = 8 mA (VOL= 0.4 V), and
• 8 I/Os simultaneously used as output at low level with IOL = 20 mA (VOL= 1.3 V),
the power consumption from power supply PINT is:
PINT = 50 mA × 3.6 V= 118 mW,
the power loss through I/Os PIO is
PIO = 20 × 8 mA × 0.4 V + 8 × 20 mA × 1.3 V = 272 mW,
and the total power PD to dissipate is:
PD = 180 mW + 272 mW = 452 mW
For a package with ΘJA= 65 °C/W, the junction temperature stabilizes at:
TJ = 50°C + (65 °C/W × 452 mW) = 50 °C + 29.4 °C = 79.4 °C
As a conclusion, product version with suffix 6 (maximum allowed TJ = 105° C) is sufficient
for this application.
If the same application was used in a hot environment with maximum TA greater than
75.5 °C, the junction temperature would exceed 105°C and the product version allowing
higher maximum TJ would have to be ordered.

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7 Ordering information

Example STM32 G 0C1 R E T 6 xyy

Device family
STM32 = Arm® based 32-bit microcontroller

Product type
G = general-purpose

Device subfamily
0C1 = STM32G0C1

Pin count
K = 32
C = 48
N = 52
M = 80
R = 64
V = 100

Flash memory size


C = 256 Kbytes
E = 512 Kbytes

Package type
I = UFBGA
T = LQFP
U = UFQFPN
Y = WLCSP

Temperature range
6 = -40 to 85°C (105°C junction)
7 = -40 to 105°C (125°C junction)
3 = -40 to 125°C (130°C junction)

Options
xTR = tape and reel packing; x = N (“N” product version), otherwise blank
x˽˽ = tray packing; x = N (“N” product version) or blank
other = 3-character ID incl. custom Flash code and packing information; x = N for “N” product version

For a list of available options (memory, package, and so on) or for further information on any
aspect of this device, contact your nearest ST sales office.

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Important security notice STM32G0C1xC/xE

8 Important security notice

The STMicroelectronics group of companies (ST) places a high value on product security,
which is why the ST product(s) identified in this documentation may be certified by various
security certification bodies and/or may implement our own security measures as set forth
herein. However, no level of security certification and/or built-in security measures can
guarantee that ST products are resistant to all forms of attacks. As such, it is the
responsibility of each of ST's customers to determine if the level of security provided in an
ST product meets the customer needs both in relation to the ST product alone, as well as
when combined with other components and/or software for the customer end product or
application. In particular, take note that:
• ST products may have been certified by one or more security certification bodies, such
as Platform Security Architecture (www.psacertified.org) and/or Security Evaluation
standard for IoT Platforms (www.trustcb.com). For details concerning whether the ST
product(s) referenced herein have received security certification along with the level
and current status of such certification, either visit the relevant certification standards
website or go to the relevant product page on www.st.com for the most up to date
information. As the status and/or level of security certification for an ST product can
change from time to time, customers should re-check security certification status/level
as needed. If an ST product is not shown to be certified under a particular security
standard, customers should not assume it is certified.
• Certification bodies have the right to evaluate, grant and revoke security certification in
relation to ST products. These certification bodies are therefore independently
responsible for granting or revoking security certification for an ST product, and ST
does not take any responsibility for mistakes, evaluations, assessments, testing, or
other activity carried out by the certification body with respect to any ST product.
• Industry-based cryptographic algorithms (such as AES, DES, or MD5) and other open
standard technologies which may be used in conjunction with an ST product are based
on standards which were not developed by ST. ST does not take responsibility for any
flaws in such cryptographic algorithms or open technologies or for any methods which
have been or may be developed to bypass, decrypt or crack such algorithms or
technologies.
• While robust security testing may be done, no level of certification can absolutely
guarantee protections against all attacks, including, for example, against advanced
attacks which have not been tested for, against new or unidentified forms of attack, or
against any form of attack when using an ST product outside of its specification or
intended use, or in conjunction with other components or software which are used by
customer to create their end product or application. ST is not responsible for resistance
against such attacks. As such, regardless of the incorporated security features and/or
any information or support that may be provided by ST, each customer is solely
responsible for determining if the level of attacks tested for meets their needs, both in
relation to the ST product alone and when incorporated into a customer end product or
application.
• All security features of ST products (inclusive of any hardware, software,
documentation, and the like), including but not limited to any enhanced security
features added by ST, are provided on an "AS IS" BASIS. AS SUCH, TO THE EXTENT
PERMITTED BY APPLICABLE LAW, ST DISCLAIMS ALL WARRANTIES, EXPRESS
OR IMPLIED, INCLUDING BUT NOT LIMITED TO THE IMPLIED WARRANTIES OF
MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE, unless the
applicable written and signed contract terms specifically provide otherwise.

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9 Revision history

Table 98. Document revision history


Date Revision Changes

13-Nov-2020 1 Initial release.


Updated last paragraph in Section 2: Description;
Updated Table 12: Pin assignment and description;
Updated Table 68: VREFBUF characteristics;
Missing package marking examples added in Section 6: Package information
18-Nov-2021 2 and figure LQFP32 package marking example corrected;
Section 6.7: Device marking updated;
Updated example in Section 6.13.2: Selecting the product temperature range;
Section 6.13: Thermal characteristics - improved UFBGA100, UFBGA64, and
LQFP80 ΘJAvalues as a result of characterization.
Updated Figure 11 to Figure 8 and Figure 5 to Figure 4: marking of VDDIO2-only
supplied pins corrected.
18-Jan-2022 3
I/O type “_s” added to Table 11: Terms and symbols used in Table 12 and
Table 12: Pin assignment and description.
Added HSI48 in features on the cover page and in Figure 1: Block diagram;
Updated Table 2: Features and peripheral counts;
Updated Table 12: Pin assignment and description (UFBGA80 corrected to
12-Dec-2022 4
LQFP80) in the header;
Updated Figure 49: WLCSP52 package marking example.
Updated Figure 54: LQFP80 - Outline(15).
Updated cover page;
RNG block presented as true random-number generator;
Universal serial bus full-speed host/device interface presented as USB;
Updated Section 1: Introduction;
Updated Table 2: Features and peripheral counts;
Updated Table 3: Access status versus readout protection level and execution
modes;
Updated Section 3.5: Boot modes;
Updated Figure 2: Power supply overview;
Added IDWG event to Section : Standby mode;
14-Nov-2024 5 Updated Section 3.7.6: VBAT operation;
Updated Section 3.14: Analog-to-digital converter (ADC);
Updated Section 3.18: True random-number generator (RNG);
Updated Table 7: Timer feature comparison;
Updated Section 3.20.1: Advanced-control timer (TIM1);
Updated Table 9: USART implementation;
Updated Section 3.26: Universal serial bus full-speed host/device interface
(USB);
Updated Section 4: Pinouts, pin description and alternate functions (packages
from lowest to highest pin count, Table 11: Terms and symbols used in Table 12,
Table 12: Pin assignment and description, and Table 13: Port A alternate function
mapping (AF0 to AF7));

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Revision history STM32G0C1xC/xE

Table 98. Document revision history (continued)


Date Revision Changes

Updated Figure 15: Power supply scheme;


Updated Section 5.2: Absolute maximum ratings (added mission profile
information and FT_s pin input voltage characteristic);
Updated Table 24: General operating conditions (VDDIO2(min) to 1.65 V, added
RST input voltage characteristic);
Updated Table 32: Current consumption in Stop 1 mode (added maximum
values);
Updated Section : I/O static current consumption;
Added Section 5.3.16: Extended interrupt and event controller input (EXTI)
characteristics;
Updated Table 51: EMI characteristics;
Updated Section : General input/output characteristics;
Updated Table 63: ADC characteristics, Table 65: ADC accuracy, and Figure 29:
12-Nov-2024 5 ADC typical connection diagram;
Table I/O AC characteristics split into Table 58: Non-FT_c I/O output timing
characteristics and Table 59: FT_c I/O output timing characteristics;
Updated Table 68: VREFBUF characteristics;
Table USART characteristics renamed to Table 79: USART characteristics in SPI
mode;
Added Figure 36: USART timing diagram in SPI master mode and Figure 37:
USART timing diagram in SPI slave mode;
Added Table 80: USB FS electrical characteristics and Figure 38: USB timings –
definition of data signal rise and fall time;
General update of Section 6: Package information (common Section 6.1: Device
marking, removal of device marking figures for packages other than WLCSP52);
Updated Table 97: Package thermal characteristics (reformatting);
Added Section 8: Important security notice;

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IMPORTANT NOTICE – READ CAREFULLY

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acknowledgment.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or
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ST and the ST logo are trademarks of ST. For additional information about ST trademarks, refer to www.st.com/trademarks. All other product
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2024 STMicroelectronics – All rights reserved

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