Si PIN photodiode arrays

S8558 S15158

Surface mountable 16-element arrays

The S8558 and S15158 are 16-element Si PIN photodiode arrays in surface mountable chip carrier packages. They can
be mounted using solder reflow and used in a wide variety of applications such as spectrophotometers and distance
measurement.

Features Applications

Photosensitive area: 0.7 × 2.0 mm (× 16 elements) Spectrophotometers

Surface mountable chip carrier package Distance measurement
Compatible with lead-free solder reflow
High sensitivity

Structure
Parameter S8558 S15158 Unit
Number of elements 16 -
Element pitch 0.8 mm
Element size 0.7 × 2.0 mm
Package Ceramic Glass epoxy -
Window material Silicone resin -

Absolute maximum ratings (Ta=25 °C)

Parameter Symbol S8558 S15158 Unit
Reverse voltage VR max 30 V
Operating temperature*1 Topr -40 to +100 °C
Storage temperature*1 Tstg -40 to +125 -40 to +100 °C
Soldering temperature Peak temperature: 260, 3 times*2 °C
*1: N
 o dew condensation. When there is a temperature difference between a product and the surrounding area in high humidity
environments, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in
characteristics and reliability.
*2: See P.5. JEDEC J-STD-020 MSL 3
Note: E xceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product
within the absolute maximum ratings.

Electrical and optical characteristics (Ta=25 °C, per element, unless otherwise noted)
S8558 S15158
Parameter Symbol Condition Unit
Min. Typ. Max. Min. Typ. Max.
Spectral response range λ - 320 to 1100 - - 380 to 1100 - nm
Peak sensitivity wavelength λp - 960 - - 960 - nm
Photosensitivity S λ=λp - 0.72 - - 0.63 - A/W
VR=10 V - 0.05 1 - - -
Dark current ID nA
VR=10 V, all 16 elements - - - - 0.4 10
Temperature coefficient of ID ΔTID VR=10 V - 1.15 - - 1.15 - times/°C
VR=10 V, RL=50 Ω
Cutoff frequency fc - 25 - - 25 - MHz
λ=830 nm, -3 dB
Noise equivalent power NEP VR=10 V, λ=λp - 5.6 × 10-15 - - 1.2 × 10-14 - W/Hz1/2
VR=10 V, f=10 kHz - 5 10 - - -
Terminal capacitance Ct pF
VR=10 V, f=10 kHz, all 16 elements - - - - 60 90

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 Si PIN photodiode arrays S8558, S15158

Spectral response Dark current vs. reverse voltage (per element)

(Typ. Ta=25 °C) (Typ. Ta=25 °C)
0.8 1 nA

0.7
QE=100%
0.6
Photosensitivity (A/W)

100 pA
0.5

Dark current
0.4
S8558
0.3
10 pA
S15158
0.2
erminal capacitance vs. reverse voltage Cutoff frequency vs. reverse voltage
0.1

0 1 pA
300 400 500 600 700 800 900 1000 1100 0.01 0.1 1 10 100

Wavelength (nm) Reverse voltage (V)

KMPDB0193EB KMPDB0194EC

Terminal capacitance vs. reverse voltage (per element) Cutoff frequency vs. reverse voltage (per element)
(Typ. Ta=25 °C) (Typ. Ta=25 °C, λ=830 nm, RL=50 Ω)
1 nF 100 MHz
Terminal capacitance

100 pF
Cutoff frequency

KMPDB0193EB KMPDB0194EC
10 MHz

10 pF

1 pF 1 MHz
0.1 1 10 100 1 10 100

Reverse voltage (V) Reverse voltage (V)

KMPDB0195EB KMPDB0196EA

KMPDB0195EB KMPDB0196EA

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 Dimensional outline (unit: mm)
Dimensional outline (unit: mm) Si PIN photodiode arrays S8558, S15158

Dimensional outline (unit: mm)

S8558 S15158
15.35 13.46
ch1 ch16
13.70 P 0.8 × 15 = 12.0
ch1 P 0.8 × 15 = 12.0 ch16

2.0
4.61
6.50
4.85

Index mark 0.7 × 2.0 (× 16 elements)

2.0

ɸ0.35 photosensitive area

Index mark
ɸ0.4 (R0.15) (R0.25)

0.6 ± 0.05
0.7 × 2.0 (× 16 elements)
Photosensitive area Silicone resin
1.26 ± 0.15

Recommended land pattern (unit: mm)

Photosensitive surface Silicone resin
(0.8)

1.22
0.9 ± 0.11
Pad No. ch Pad No. ch
Pad No. ch Pad No. ch
1 16 Photosensitive
14
1 16
3 surface 3 14
5 12
P 1.27 × 8 = 10.16 7 10 5 12
9 8 7 10
0.6
Recommended land pattern (unit: mm)

3.31 ± 0.05
11 6 Index mark 9 8
13 4 ɸ0.5 1.3 ± 0.05 11 6
15 2 13 4
15 2
2.5

KC NC
KC: cathode common KC NC
Index mark KC: cathode common
NC: no connection
ɸ0.4 NC: no connection
1.0 ± 0.05

Tolerance unless
P1.3 × 8= 10.4 ± 0.05 Tolerance unless
otherwise noted: ±0.25
KMPDA0144EE (18 ×) 0.6 ± 0.05 otherwise noted: ±0.1

KMPDA0623EC

Recommended land pattern (unit: mm)

S8558 S15158
0.8
y: 3.0 min.

KMPDA0623EC
1.0 min.

x: 0.6 max. KMPDA0144EE

3.31
1.2

1.3 Photodiode
Photodiode

1. Solder all terminals. 1. Solder all terminals.

2. Do not make the land area larger than necessary. 2. Do not make the land area larger than necessary.
3. It is preferable that the land sizes be about equal.
3. It is preferable that the land sizes be about equal.
4. Make land width x about the same as the terminal width.
5. Make land length y at least 1 mm longer than the terminal length,
protruding outside the package. KMPDC0787EA

KPINC0028ED

KPINC0028ED
KMPDC0787EA

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 Si PIN photodiode arrays S8558, S15158

Standard packing specifications

S8558
P
 acking quantity
100 pcs max./tray

P
 acking state
Tray and desiccant in moisture-proof packaging (vacuum-sealed)

S15158
Reel (conforms to JEITA ET-7200)
ing specifications

Dimensions Hub diameter Tape width Material Electrostatic characteristics

330 mm 100 mm 24 mm PS Conductive

Embossed tape (unit: mm, material: PS, conductive)

ɸ1.55 ± 0.05 Index mark
1.75 ± 0.1

8.0 ± 0.1 2.0 ± 0.1 4.0 ± 0.1 1.8 ± 0.1

11.5 ± 0.1
24.0 ± 0.3

13.81 ± 0.1

4.96 ± 0.1 ϕ1.5 0.3 ± 0.05

Reel feed direction

KMPDC0789EA

P
 acking quantity
1000 pcs/reel

P
 acking state KMPDC0789EA
Reel and desiccant in moisture-proof packaging (vacuum-sealed)

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 Si PIN photodiode arrays S8558, S15158

Recommended reflow soldering conditions

300 °C
‧A  fter unpacking, keep it in an environment at 5 to
260 °C max.
30 °C and a humidity of 60% or less, and perform
soldering within 168 hours.
230 °C ‧ The effect that the product receives during reflow
soldering varies depending on the circuit board and
190 °C reflow oven that are used.
Temperature

170 °C ‧ When you set reflow soldering conditions, check

that problems do not occur in the product by
testing out the conditions in advance.

Preheat Soldering
60 to 120 s 20 to 40 s max.

Time
KPINB0385EB

Related information
www.hamamatsu.com/sp/ssd/doc_en.html

Precautions
‧ Disclaimer
‧ Surface mount type products

Technical note
‧ Si photodiodes KPINB0385EB

Information described in this material is current as of September 2022.

Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81)53-434-3311, Fax: (81)53-434-5184
U.S.A.: HAMAMATSU CORPORATION: 360 Foothill Road, Bridgewater, NJ 08807, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected]
Germany: HAMAMATSU PHOTONICS DEUTSCHLAND GMBH.: Arzbergerstr. 10, 82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-265-8 E-mail: [email protected]
France: HAMAMATSU PHOTONICS FRANCE S.A.R.L.: 19 Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected]
United Kingdom: HAMAMATSU PHOTONICS UK LIMITED: 2 Howard Court,10 Tewin Road, Welwyn Garden City, Hertfordshire, AL7 1BW, UK, Telephone: (44)1707-294888, Fax: (44)1707-325777 E-mail: [email protected]
North Europe: HAMAMATSU PHOTONICS NORDEN AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46)8-509 031 00, Fax: (46)8-509 031 01 E-mail: [email protected]
Italy: HAMAMATSU PHOTONICS ITALIA S.R.L.: Strada della Moia, 1 int. 6, 20044 Arese (Milano), Italy, Telephone: (39)02-93 58 17 33, Fax: (39)02-93 58 17 41 E-mail: [email protected]
China: HAMAMATSU PHOTONICS (CHINA) CO., LTD.: 1201 Tower B, Jiaming Center, 27 Dongsanhuan Beilu, Chaoyang District, 100020 Beijing, P.R. China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: [email protected]
Taiwan: HAMAMATSU PHOTONICS TAIWAN CO., LTD.: 8F-3, No.158, Section 2, Gongdao 5th Road, East District, Hsinchu, 300, Taiwan R.O.C. Telephone: (886)3-659-0080, Fax: (886)3-659-0081 E-mail: [email protected]
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Cat. No. KMPD1062E07 Sep. 2022 DN