STP65N045M9

Datasheet

N-channel 650 V, 39 mΩ typ., 54 A MDmesh M9 Power MOSFET

in a TO-220 package

Features
TAB
Order code VDS RDS(on) max. ID

STP65N045M9 650 V 45 mΩ 54A

2
3 • Worldwide best FOM RDS(on)*Qg among silicon-based devices
1
• Higher VDSS rating
TO-220
• Higher dv/dt capability
• Excellent switching performance
D(2, TAB) • Easy to drive
• 100% avalanche tested

Applications
G(1)
• High efficiency switching applications

Description
S(3)

AM01475v1_noZen This N-channel Power MOSFET is based on the most innovative super-junction
MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very
low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain
manufacturing process which allows an enhanced device structure. The resulting
product has one of the lower on-resistance and reduced gate charge values, among
all silicon based fast switching super-junction Power MOSFETs, making it particularly
suitable for applications that require superior power density and outstanding
efficiency.

Product status link

STP65N045M9

Product summary

Order code STP65N045M9

Marking 65N045M9
Package TO-220
Packing Tube

DS13506 - Rev 6 - July 2024 www.st.com

For further information contact your local STMicroelectronics sales office.
 STP65N045M9
Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VGS Gate-source voltage ±30 V

Drain current (continuous) at TC = 25 °C 54

ID(1) A
Drain current (continuous) at TC = 100 °C 34

IDM(2) Drain current (pulsed) 170 A

PTOT Total power dissipation at TC = 25 °C 245 W

dv/dt(3) Peak diode recovery voltage slope 50 V/ns

di/dt(3) Peak diode recovery current slope 900 A/μs

dv/dt(4) MOSFET dv/dt ruggedness 120 V/ns

Tstg Storage temperature range °C

-55 to 150
TJ Operating junction temperature range °C

1. Referred to TO-247 long leads package.

2. Pulse width is limited by safe operating area.
3. ISD ≤ 28 A, VDS (peak) < V(BR)DSS, VDD = 400 V.
4. VDS (peak) < V(BR)DSS, VDD = 400 V.

Table 2. Thermal data

Symbol Parameter Value Unit

RthJC Thermal resistance, junction-to-case 0.51 °C/W

RthJA Thermal resistance, junction-to-ambient 62.5 °C/W

Table 3. Avalanche characteristics

Symbol Parameter Value Unit

IAR Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max.) 6 A

EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 775 mJ

DS13506 - Rev 6 page 2/12

 STP65N045M9
Electrical characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 4. On-/off-states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 650 V

VGS = 0 V, VDS = 650 V 1

IDSS Zero gate voltage drain current µA
VGS = 0 V, VDS = 650 V, TC = 125 °C(1) 200

IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3.2 3.7 4.2 V

RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 28 A 39 45 mΩ

1. Specified by design, not tested in production.

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance - 4610 - pF

VDS = 400 V, f = 1 MHz, VGS = 0 V
Coss Output capacitance - 76 - pF

Coss eq. (1) VDS = 0 to 400 V, VGS = 0 V

Equivalent output capacitance - 885 - pF

RG Intrinsic gate resistance f = 1 MHz open drain - 1 - Ω

Qg Total gate charge - 80 - nC

VDD = 400 V, ID = 28 A, VGS = 0 to 10 V
Qgs Gate-source charge (see Figure 14. Test circuit for gate - 26.5 - nC

Qgd charge behavior)

Gate-drain charge - 23.5 - nC

1. Coss eq. is a constant equivalent capacitance that provides the same charging time as Coss while VDS is rising from 0 V to
the stated value.

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VDD= 325 V, ID = 28 A, - 25 - ns

tr Rise time RG = 4.7 Ω, VGS = 10 V - 26 - ns

td(off) Turn-off delay time (see Figure 13. Test circuit for - 77 - ns
resistive load switching times
and Figure 18. Switching time
tf Fall time - 4 - ns
waveform)

DS13506 - Rev 6 page 3/12

 STP65N045M9
Electrical characteristics

Table 7. Source-drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD (1)
Source-drain current - 54 A

ISDM(2) Source-drain current (pulsed) - 170 A

VSD (3) ISD = 55 A, VGS = 0 V

Forward on voltage - 1.5 V

trr Reverse recovery time ISD = 55 A, di/dt = 100 A/µs, - 288 ns

Qrr Reverse recovery charge VDD = 100 V - 4 µC

(see Figure 15. Test circuit for inductive
IRRM Reverse recovery current - 26 A
load switching and diode recovery times)
trr Reverse recovery time ISD = 55 A, di/dt = 100 A/µs, - 400 ns

Qrr Reverse recovery charge VDD = 100 V, TJ = 150 °C - 7.5 µC

(see Figure 15. Test circuit for inductive
IRRM Reverse recovery current - 34 A
load switching and diode recovery times)

1. Referred to TO-247 long leads package.

2. Pulse width is limited by safe operating area.
3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

DS13506 - Rev 6 page 4/12

 STP65N045M9
Electrical characteristics

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Maximum transient thermal impedance

ID GADG251120210953SOA ZthJC GADG251120210954ZTH

(A) IDM (°C/W)
0.4 0.3 0.2
duty=0.5
10 2
ea
ar
is )
th S(on tp =1µs
in R D 10 -1
ion y
at d b
10 1 p er ite
O lim
is tp =10µs 0.1
RDS(on) max.
0.05
10 0
10 -2
RthJC = 0.51 °C/W
tp =100µs duty = ton / T
10 -1 V(BR)DSS
TJ ≤ 150 °C
tp =10ms Single pulse ton
TC = 25 °C
Single pulse tp =1ms T
10 -2 10 -3
10 -1 10 0 10 1 10 2 VDS (V) 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 tp (s)

Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics

ID GADG251120210954OCH ID GADG141220210753TCH
(A) (A)
VGS = 8, 9, 10 V
150 150
VDS = 14 V
7V
120 120

90 90

60 60
6V
30 30

0 0
0 2 4 6 8 10 12 VDS (V) 4 5 6 7 8 9 VGS (V)

Figure 5. Typical gate charge characteristics Figure 6. Typical drain-source on-resistance

VDS GADG251120210955QVG VGS RDS(on) GADG251120210959RID

(V) VDD = 400 V, ID = 28 A (V) (mΩ)
Qg VGS
375 10 42

300 8 41
VGS = 10 V
Qgs Qgd
225 6 40

150 4 39

75 2 38
VDS

0 0 37
0 20 40 60 80 Qg (nC) 0 10 20 30 40 50 ID (A)

DS13506 - Rev 6 page 5/12

 STP65N045M9
Electrical characteristics

Figure 7. Typical capacitance characteristics Figure 8. Typical output capacitance stored energy

C GADG251120210958CVR EOSS GADG251120211015EOS

(pF) (µJ)

10 4
20
Ciss
10 3
15
10 2
Coss
10
10 1 Crss
f = 1 MHz 5
10 0

10 -1 0
10 -1 10 0 10 1 10 2 VDS (V) 0 100 200 300 400 500 600 VDS (V)

Figure 9. Normalized gate threshold vs temperature Figure 10. Normalized on-resistance vs temperature

VGS(th) GADG251120211003VTH RDS(on) GADG251120211003RON

(norm.) (norm.)

1.1 2.5
VGS = 10 V
ID = 250 µA
1.0 2.0

0.9 1.5

0.8 1.0

0.7 0.5

0.6 0.0
-75 -25 25 75 125 TJ (°C) -75 -25 25 75 125 TJ (°C)

Figure 11. Normalized breakdown voltage vs temperature Figure 12. Typical reverse diode forward characteristics

V(BR)DSS GADG251120211004BDV VSD GADG251120211006SDF

(norm.) (V)

1.10 1.1
TJ = -50 °C
ID = 1 mA
1.0
1.05
0.9
TJ = 25 °C
1.00
0.8
0.95 TJ = 150 °C
0.7

0.90 0.6

0.85 0.5
-75 -25 25 75 125 TJ (°C) 0 10 20 30 40 50 ISD (A)

DS13506 - Rev 6 page 6/12

 STP65N045M9
Test circuits

3 Test circuits

Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior

VDD

RL

RL
2200 3.3
+ μF μF VDD IG= CONST
100 Ω D.U.T.
VGS
VD
pulse width +
2.7 kΩ
RG D.U.T. 2200 VG
VGS
μF
pulse width
47 kΩ

1 kΩ

AM01468v1 AM01469v10

Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit
diode recovery times

A A A
D L
fast 100 µH VD
G D.U.T. diode
S B 3.3 1000 2200 3.3
B B + µF
25 Ω D
µF + µF VDD µF VDD
ID
G D.U.T.
+ RG S

_ Vi D.U.T.

pulse width

AM01470v1
AM01471v1

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

ton toff
V(BR)DSS
td(on) tr td(off) tf
VD

90% 90%
IDM

10% VDS 10%

ID 0

VDD VDD
VGS 90%

0 10%

AM01472v1 AM01473v1

DS13506 - Rev 6 page 7/12

 STP65N045M9
Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-220 type A package information

Figure 19. TO-220 type A package outline

0015988_typeA_Rev_23

DS13506 - Rev 6 page 8/12

 STP65N045M9
Package information

Table 8. TO-220 type A package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
b 0.61 0.88
b1 1.14 1.55
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10.00 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13.00 14.00
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95
Slug flatness 0.03 0.10

DS13506 - Rev 6 page 9/12

 STP65N045M9

Revision history
Table 9. Document revision history

Date Version Changes

24-Feb-2021 1 First release.

Updated title, Features and Description on cover page.
Updated Section 1 Electrical ratings.
16-Dec-2021 2 Updated Section 2 Electrical characteristics.
Added Section 2.1 Electrical characteristics (curves).
Updated Section 3 Test circuits.
Updated Table 1. Absolute maximum ratings.
16-Feb-2022 3 Updated Table 5. Dynamic.
Minor text changes.
25-May-2022 4 Updated Features on cover page.
Updated title and Features on cover page.
Updated Table 1. Absolute maximum ratings.
04-Sep-2023 5 Updated Table 6. Switching times.
Updated Table 7. Source-drain diode.
Updated Section 3: Test circuits.
Updated Figure 10. Normalized on-resistance vs temperature and Figure 11. Normalized
19-Jul-2024 6 breakdown voltage vs temperature.
Minor text changes.

DS13506 - Rev 6 page 10/12

 STP65N045M9
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

DS13506 - Rev 6 page 11/12

 STP65N045M9

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DS13506 - Rev 6 page 12/12