Silan

Microelectronics SVS11N65D/F/S/FJD2_Datasheet
11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION 2

SVS11N65D/F/S/FJD2 is an N-channel enhancement mode high

voltage power MOSFETs produced using Silan’s super junction MOS 1
technology. It achieves low conduction loss and switching losses. It
1
leads the design engineers to their power converters with high 3 3
1.Gate 2.Drain 3.Source TO-263-2L
efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.e., suitable for hard and soft
switching topologies.
12
3
TO-220FJ-3L
FEATURES

 11A,650V, RDS(on)(typ.)=0.33@VGS=10V 1 12
 New revolutionary high voltage technology 3 3
TO-252-2L TO-220F-3L
 Ultra low gate charge
 Periodic avalanche rated
 Extreme dv/dt rated
 High peak current capability

ORDERING INFORMATION

Hazardous
Part No. Package Marking Packing Type
Substance Control
SVS11N65DD2TR TO-252-2L 11N65DD2 Halogen free Tape & Reel
SVS11N65FD2 TO-220F-3L 11N65FD2 Halogen free Tube
SVS11N65SD2 TO-263-2L 11N65SD2 Halogen free Tube
SVS11N65SD2TR TO-263-2L 11N65SD2 Halogen free Tape & Reel
SVS11N65FJD2 TO-220FJ-3L 11N65FJD2 Halogen free Tube

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.6

http: //www.silan.com.cn Page 1 of 9
 Silan
Microelectronics SVS11N65D/F/S/FJD2_Datasheet

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C)

Ratings
Characteristics Symbol SVS11N65 SVS11N65 SVS11N65 Unit
DD2 F/FJD2 SD2
Drain-Source Voltage VDS 650 V
Gate-Source Voltage VGS ±30 V
TC=25°C 11
Drain Current ID A
TC=100°C 7
Drain Current Pulsed IDM 44 A
Power Dissipation (TC=25C) 87 35 92 W
PD
- Derate above 25C 0.70 0.28 0.74 W/C
Single Pulsed Avalanche Energy (Note 1) EAS 250 mJ
Reverse diode dv/dt (Note 2) dv/dt 15 V/ns
MOSFET dv/dt ruggedness (Note 3) dv/dt 50 V/ns
Operation Junction Temperature Range TJ -55～+150 C
Storage Temperature Range Tstg -55～+150 C

THERMAL CHARACTERISTICS
Ratings
Characteristics Symbol SVS11N65 SVS11N65 SVS11N65 Unit
DD2 F/FJD2 SD2
Thermal Resistance, Junction-to-Case RθJC 1.44 3.57 1.36 C/W
Thermal Resistance, Junction-to-Ambient RθJA 62.0 62.5 62.50 C/W

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.6

http: //www.silan.com.cn Page 2 of 9
 Silan
Microelectronics SVS11N65D/F/S/FJD2_Datasheet

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, TC=25C)

Characteristics Symbol Test conditions Min. Typ. Max. Unit

Drain -Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 650 -- -- V
Drain-Source Leakage Current IDSS VDS=650V, VGS=0V -- -- 1.0 µA
Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V -- -- ±100 nA
Gate Threshold Voltage VGS(th) VGS= VDS, ID=250µA 2.0 -- 4.0 V
Static Drain- Source
RDS(on) VGS=10V, ID=5.5A -- 0.33 0.4 
on State Resistance
Gate resistance Rg f=1MHz -- 5.2 -- 
Input Capacitance Ciss -- 632 --
f=1MHz,VGS=0V,
Output Capacitance Coss -- 37 -- pF
VDS=100V
Reverse Transfer Capacitance Crss -- 2.3 --
Turn-on Delay Time td(on) VDD=325V, VGS=10V, -- 12 --
Turn-on Rise Time tr RG=24Ω, ID=11A -- 35 --
ns
Turn-off Delay Time td(off) -- 64 --
Turn-off Fall Time tf (Note 4,5) -- 31 --
Total Gate Charge Qg VDD=520V, VGS=10V, -- 23 --
Gate-Source Charge Qgs ID=11A -- 5.3 -- nC
Gate-Drain Charge Qgd (Note 4,5) -- 11 --

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristics Symbol Test conditions Min. Typ. Max. Unit

Continuous Source Current IS Integral Reverse P-N Junction -- -- 11
A
Pulsed Source Current ISM Diode in the MOSFET -- -- 44
Diode Forward Voltage VSD IS=11A,VGS=0V -- -- 1.4 V
Reverse Recovery Time Trr IS=11A,VGS=0V, -- 361 -- ns
Reverse Recovery Charge Qrr dIF/dt=100A/µs (Note 4) -- 3.9 -- µC
Notes:
1. L=79mH,IAS=2.4A,VDD=100V, RG=25, starting temperature TJ=25C;
2. VDS=0~400V,ISD<=11A, TJ=25C;
3. VDS=0~480V;
4. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
5. Essentially independent of operating temperature.

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.6

http: //www.silan.com.cn Page 3 of 9
 Silan
Microelectronics SVS11N65D/F/S/FJD2_Datasheet
TYPICAL CHARACTERISTICS

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

100 100
VGS=4.5V
VGS=5V -55°C
VGS=5.5V 25°C
VGS=6V 150°C
Drain Current – ID(A)

Drain Current – ID(A)

VGS=7V
10 VGS=8V 10
VGS=10V
VGS=15V

1 1

Notes: Notes:
1.250µS pulse test 1.250µS pulse test
2.TC=25°C 2.VDS=50V
0.1 0.1
0.1 1 10 100 2 4 6 8 10

Drain-Source Voltage – VDS(V) Gate-Source Voltage– VGS(V)

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current Variation vs. Source Current and Temperature
0.40 100
Reverse Drain Current – IDR(A)
Drain-Source On-Resistance –

VGS=10V -55°C
0.38 VGS=20V 25°C
150°C
10
RDS(ON)(Ω)

0.36

0.34
1

0.32 Notes:
Note: TJ=25°C 1.250µS pulse test
2.VGS=0V
0.30 0.1
0 2 4 6 8 10 12 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Drain Current – ID(A) Source-Drain Voltage– VSD(V)

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

104 12
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd VDS=520V
Gate-Source Voltage– VGS(V)

Crss=Cgd VDS=325V
103 10
VDS=130V
Capacitance(pF)

8
102
6
1
10
4

100
Ciss Notes: 2
Coss 1. VGS=0V Note: ID=11.0A
Crss 2. f=1MHz
10-1 0
0 100 200 300 400 500 600 0 5 10 15 20 25 30

Drain-Source Voltage – VDS(V) Total Gate Charge – Qg(nC)

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.6

http: //www.silan.com.cn Page 4 of 9
 Silan
Microelectronics SVS11N65D/F/S/FJD2_Datasheet
TYPICAL CHARACTERISTICS(continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-resistance Variation

vs. Temperature vs. Temperature
1.2 3.0
Drain-Source Breakdown Voltage–

Drain-Source On-Resistance
2.5

– RDS(ON)(Normalized)
BVDSS(Normalized)

1.1
2.0

1.0 1.5

1.0
0.9
Notes: Notes:
1. VGS=0V 0.5 1. VGS=10V
2. ID=250µA 2. ID=5.5A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
Junction Temperature – TJ(°C) Junction Temperature – TJ(°C)

Figure 9.1. Max. Safe Operating Figure 9.2. Max. Safe Operating
Area(SVS11N65DD2) Area(SVS11N65F/FJD2)
2 2
10 10

100µs 100µs
1
10 1ms 101
Drain Current - ID(A)

Drain Current - ID(A)

10ms 1ms

DC
100 Operation in This Area is
100 10ms

Limited by RDS(ON)
DC
-1 -1 Operation in This Area is
10 10
Limited by RDS(ON)

Note: TC=25°C Note: TC=25°C

10-2 10-2
100 101 102 103 100 101 102 103

Drain Source Voltage - VDS(V) Drain Source Voltage - VDS(V)

Figure 9.3. Max. Safe Operating

Area(SVS11N65SD2)
102

100µs
101
Drain Current - ID(A)

1ms

10ms

0
10 DC

Operation in This Area is

Limited by RDS(ON)

10-1

Note: TC=25°C

10-2
100 101 102 103
Drain Source Voltage - VDS(V)

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.6

http: //www.silan.com.cn Page 5 of 9
 Silan
Microelectronics SVS11N65D/F/S/FJD2_Datasheet
TYPICAL TEST CIRCUIT

Same Type
as DUT
VGS
Qg
10V

VGS VDS
Qgs Qgd

DUT
Vgs(th)
Ig

Qg(th) Charge

Gate Charge Test Circuit & Waveform

RL
VDS
VDS
90%

VGS

RG DUT VDD
10%
VGS
VGS td(on) td(off)
tr tf
ton toff

Resistive Switching Test Circuit & Waveform

L 1 2 BVDSS
EAS =
VDS 2 LIAS BVDSS VDD
BVDSS
ID
IAS

RG
DUT VDD
ID(t)
VGS VDS(t)
VDD
tp

tp Time

Unclamped Inductive Switching Test Circuit & Waveform

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.6

http: //www.silan.com.cn Page 6 of 9
 Silan
Microelectronics SVS11N65D/F/S/FJD2_Datasheet
PACKAGE OUTLINE

TO-252-2L UNIT: mm

SYMBOL MIN NOM MAX

A 2.10 2.30 2.50
A1 0 --- 0.127
b 0.66 0.76 0.89
b3 5.10 5.33 5.46
c 0.45 --- 0.65
c2 0.45 --- 0.65
D 5.80 6.10 6.40
E 6.30 6.60 6.90
e 2.30TYP
Eject pin（note1）
H 9.60 10.10 10.60
L 1.40 1.50 1.70
L1 2.90REF
L4 0.60 0.80 1.00
L4

NOTE1：There are two conditions for this position:has an eject pin or has no eject pin.

TO-220F-3L UNIT: mm

1
4.42 4.70 5.02

2.30 2.54 2.80

2.50 2.76 3.10
0.70 0.80 0.90
1 1.47

0.35 0.50 0.65

15.25 15.87 16.25

15.30 15.75 16.30

9.30 9.80 10.30

9.73 10.16 10.36

2.54BCS

6.40 6.68 7.00

12.48 12.98 13.48

/ / 3.50
3.00 3.18 3.40
3.05 3.30 3.55

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.6

http: //www.silan.com.cn Page 7 of 9
 Silan
Microelectronics SVS11N65D/F/S/FJD2_Datasheet
PACKAGE OUTLINE(continued)

TO-263-2L UNIT: mm

L1 A

E c2
SYMBOL MIN NOM MAX
A 4.30 4.57 4.72
A1 0 0.10 0.25

b 0.71 0.81 0.91

c 0.30 --- 0.60

c2 1.17 1.27 1.37

D

D 8.50 --- 9.35

E 9.80 --- 10.45

H
e 2.54BSC

c 14.70 --- 15.75

H
A1
L 2.00 2.30 2.74
L2

L1 1.12 1.27 1.42

L2 --- --- 1.75

L

b1 e e b

TO-220FJ-3L UNIT: mm

1
4.42 4.70 5.02

2.30 2.54 2.80

2.50 2.76 3.10
0.55 0.70 0.85
1 1.29

0.35 0.50 0.65

15.25 15.87 16.25

13.97 14.47 14.97

10.58 11.08 11.58

9.73 10.16 10.36

2.54BCS

6.40 6.68 7.00

12.48 12.98 13.48

2.00
3.00 3.18 3.40
3.05 3.30 3.55

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.6

http: //www.silan.com.cn Page 8 of 9
 Silan
Microelectronics SVS11N65D/F/S/FJD2_Datasheet
Important notice :
 The instructions are subject to change without notice！ Customers should obtain the latest relevant information before placing
orders and should verify that such information is complete and current.
 Our products are consumer electronic products, and / or civil electronic products.
 When using our products, please do not exceed the maximum rating of the products, otherwise the reliability of the whole
machine will be affected. There is a certain possibility of failure or malfunction of any semiconductor product under specific
conditions. The buyer is responsible for complying with safety standards and taking safety measures when using our products
for system design, sample and whole machine manufacturing, so as to avoid potential failure risk that may cause personal
injury or property loss.
 It is strongly recommended to identify the trademark when buying our products. Please conatus us if there is any question.
 When exporting, using and reselling our products, buyer must comply with the international export control laws and
regulations of China, the United States, the United Kingdom, the European Union and other countries & regions.
 Product promotion is endless, our company will wholeheartedly provide customers with better products!
 Website: http: //www.silan.com.cn

Part No.: SVS11N65D/F/S/FJD2 Document Type: Datasheet

Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn

Rev.: 1.6
Revision History:
1. Update Electrical schematic and TYPICAL TEST CIRCUIT
2. Update Fig 5
Rev.: 1.5
Revision History:
1. Add dv/dt
2. Update Fig 5 and 6
3. Add TO-220FJ-3L
Rev.: 1.4
Revision History:
1. Modify the figure 3
Rev.: 1.3
Revision History:
1. Modify the absolute maximum ratings
2. Modify the thermal characteristics
Rev.: 1.2
Revision History:
1. Add the package information of TO-263-2L
Rev.: 1.1
Revision History:
1. Add the package information of TO-220F-3L
Rev.: 1.0
Revision History:
1. First release

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.6

http: //www.silan.com.cn Page 9 of 9