MLA 150
THE ADVANCED MASKLESS ALIGNER
heidelberg-instruments.com
MLA 150
THE ADVANCED MASKLESS ALIGNER
The Maskless Aligner MLA 150 takes you into the future of photolithography: The traditional photomask
becomes a thing of the past as your design file is exposed directly onto the resist-coated wafer via a
2-dimensional Spatial Light Modulator.
THE NEW PHOTOLITHOGRAPHY
CYCLE
In addition to flexibility and economy,
MLA 150 provides non-contact expo-
sure, outstanding ease of use, and high
speed, making it the ideal tool in rapid
prototyping environments, for low-
to mid-volume production, and Re-
search & Development. The Maskless
Aligner was first introduced in 2015.
Since then, the revolutionary, state-
of-the-art maskless technology has
become firmly established. Today, the
MLA 150 serves as a trusted, indispen-
sable workhorse in many multi-user
facilities, nanofabrication labs, and na-
tional institutes. Application areas in-
clude MEMS, micro-optics, diffractive
optical elements, sensors, electronic
components, and many more.
THE RASTER SCAN WRITING STRATEGY
Directly modulated light illuminates the resist-covered
surface according to the design data; this precise exposure
immediately generates the pattern. This process is called
“direct writing” – as opposed to projecting an image
through a mask. The design layout is converted into a
pixel image and during exposure, the image is created by
projecting each pixel onto the photoresist through the
optical system while the stage advances continuously. The
Spatial Light Modulator effectively takes on the role of a
programmable photomask.
• High-speed Spatial Light Modulator (SLM)
• Bi-directional writing process
• „Empty stripes“ optimization
• Ultra-fast x-y stage
MLA 150 EXPOSURE TIMES *
Laser wavelength 405 nm
50 x 50 mm2 4 minutes
100 x 100 mm 2
9 minutes
150 x 150 mm2 16 minutes
200 x 200 mm 2
36 minutes
Writing strategy MLA 150 *For exposure at 100 mJ/cm2 and minimum feature size of 1 μm
HIGH RESOLUTION HIGH-ASPECT-RATIO
• Adjustable
depth of focus
• Aspect ratio
up to 1:20
• Applications:
Micro-fluidics,
MEMS,
waveguides
High-aspect ratio: Pillars. Resist: 160 μm SU-8
High-resolution mode: Vertical 500 nm lines and spaces. Resist: S1805. Wave-
length: 375 nm
FAST AND HIGH-PRECISION ALIGNMENT
• Global and field-by-field alignment
• Backside alignment
• Alignment accuracy of better than 500 nm
• Fast and easy alignment procedure
• Alignment error compensation: Corrects for rotation,
offset, scaling and shearing
• Allows mix and match between different tool-sets, e.g.
e-beam or thermal scanning probe lithography and la-
ser lithography MIX-AND-MATCH APPLICATIONS
Mix and match
MLA 150
E-beam
Mix-and-match lithography
SQUID magnetic flux sensor; 18 layer process Courtesy of EPFL LMIS1, Lausanne
Courtesy of the Kirchhoff Institute for Physics, Heidelberg
FLEXIBILITY
• The available solid-state laser sources (405
and 375 nm) make the system compatible
with all broadband UV photoresists (including
SU-8) and can both be installed in the MLA 150 at the
same time
• 3D-patterning with grayscale lithography
• Optional: exchangeable chucks with individual
vacuum layouts
• The Draw Mode: Add individual features to a previ-
ously patterned substrate. Using graphic elements, or
even a bitmap, simply „draw“ the desired structures
- such as labels, markers, or electrical connections -
directly into the camera image
MLA 150
SYSTEM SPECIFICATIONS
Write Mode I * Write Mode II *
Writing performance
Minimum feature size [μm] 0.6 1
Minimum lines & spaces [μm] 0.8 1.2
Global 2nd layer alignment [3σ, nm] 500 500
Local 2nd layer alignment [3σ, nm] 250 250
Backside alignment [3σ, nm] 1000 1000
Exposure time 405 nm laser for 4″ wafer [min] 35 9
Exposure time 375 nm laser for 4″ wafer [min] 35 20
Max. write speed 405 nm laser [mm2/min] 285 1100
Max. write speed 375 nm laser [mm2/min] 285 500
System features
Light source Diode lasers: 8 W at 405 nm, 2.8 W at 375 nm, or both
Variable: 3 x 3 mm² to 6″ x 6″ | Optional: 8″ x 8″
Substrate sizes
Customizable on request
Substrate thickness 0 - 12 mm
Maximum exposure area 150 x 150 mm2 | Optional: 200 x 200 mm2
Environmental chamber Temperature stability ± 0.1°
Real-time autofocus Air-gauge or optical
Autofocus compensation range 180 μm
Grayscale 128 gray levels
Exposure wizard, resist database, automatic labeling
Software features and serialization, Draw Mode for CADless exposures,
substrate tracking / history
• Can handle masks up to 7″ and wafers up to 8″
Optional Automatic Loading System
• A second cassette station, and a prealigner and wafer scanner are
available as options
System dimensions (lithography unit)
Height × width × depth 1950 mm × 1300 mm × 1300 mm
Weight 1100 kg
Installation requirements
Electrical 230 VAC ± 5%, 50/60 Hz, 16 A
Compressed air 6 - 10 bar, stability ± 0.5 bar
Economical considerations
Saves on the cost of photomasks
Low running costs for maintenance, energy consumption, spare parts
Solid-state laser light sources with lifetime of several years
* Only one write mode can be installed on the system
Please note: Specifications depend on individual process conditions and Visit product website for
may vary according to equipment configuration. Write speed depends on more information
exposure area. Design and specifications are subject to change without
prior notice.
To contact your local representative,
please consult our website
heidelberg-instruments.com
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