Microsystem Technologies

https://doi.org/10.1007/s00542-024-05638-7 (0123456789().,-volV)(0123456789().
,- volV)

TECHNICAL PAPER

Simulation and modeling of high-sensitive JL-TFET based biosensor

for label free detection of biomolecules
Pratikhya Raut1 • Deepak Kumar Panda2 • Umakanta Nanda3 • Chih-Chieh Hsu4

Received: 30 July 2023 / Accepted: 25 March 2024

Ó The Author(s), under exclusive licence to Springer-Verlag GmbH Germany, part of Springer Nature 2024

Abstract
A biosensor employing a junctionless TFET (JL-TEFT) to identify different protein molecules is modelled and investigated
in this paper. The JLTFET is chosen for designing the biosensor because of its superiority over TFET and JLFET. The
biomolecules can be captured in this type of devices by creating cavities across the gate. Various output parameters of label
free biosensing with respect to various dielectric constants was studied using TCAD simulator. This article further
portrays current and voltage sensitivity. This paper also investigates the fill factor impact of size of biomolecules and
cavity positioning on the performance of biosensor. The dielectric modulation method for identifying a range of proteins
and amino acids is being investigated through simulations. The sensitivity of JLTFET-based biosensors was found to be
1013. The novelties in this manuscript is that for the first time, an analytical mathematical model of a triple material gate
asymmetrical hetero-dielectric JLTFET biosensor has been derived here. The developed model is not having any empirical
parameter. Hence the proposed model is faster. Besides exhibiting increased sensitivity when compared to previous FET
and TFET-based biosensors, this device also shows its suitability for low-power applications, hence providing a multitude
of avenues for future exploration.

1 Introduction convictions. As a consequence, when developing a sensor,

it is vital to consider reliability, efficacy, and affordability.
The demand for dependable detectors has recently surged As a result, the significance of dielectric modulation-based
as a result of the COVID-19-caused epidemic. While most sensors has grown, with the bulk of detection methods
of the biosensors are being developed to detect a variety of falling into one of two categories: label free (Saha et al.
parameters such as proteins, toxic substances, gases, and so 2021) or either labelled. The second approach is based on a
on (Vanlalawmpuia and Bhowmick 2021), the bulk of chemical reaction between the biomolecule and the
these rely on sophisticated methods that raise the cost and receptor, whereas the first approach detects the presence of
detection time. A considerable proportion of the pro- a biomolecule using physical Generally label free methods
posed biosensors have problems with erroneous are most preferred due to their capability to enable direct
detection of molecules, reusability and direct processing.
Field effect transistor based biosensors proposed in recent
& Umakanta Nanda past are also incredibly useful due to their remarkable
[email protected] sensitivity and cost effectiveness. These biosensors on the
1 other hand, have significant Short Channel Effects and
Department of ECE, V R Siddhartha Engineering College,
Siddhartha Academy of Higher Education (deemed to be Subthreshold Slope due to their basic operating principle.
University), Vijayawada, Andhra Pradesh 520007, India Therefore, SS sub 60 mV/dec biosensors based on tun-
2
Department of ECE, Amrita School of Engineering nelling TFET (Karthik and Pandey 2022a) technology is
Amaravati, Amrita Vishwa Vidyapeetham, Amaravati, envisioned. However, creating the abrupt junctions
Andhra Pradesh 522503, India required for tunnelling TFET can be problematic. As a
3
School of Electronics Engineering, VIT-AP University, result, uniformly doped JLTFET (Wadhwa and Raj 2019)
Amaravati, Near Vijayawada, Andhra Pradesh 522237, India biosensors, which share the advantageous properties of
4
Department of Electronic Engineering, National Yunlin TFET, produce significantly better results. These devices
University of Science and Technology, Douliu 64002,
Taiwan, ROC

123

Content courtesy of Springer Nature, terms of use apply. Rights reserved.

 Microsystem Technologies

have a much lower probability of SCE’s (Raut and Nanda In this study, two 20 nm gates named polar and control
2022) and an SS (Raut et al. 2022) of less than 60 mV/Dec. gates have been successfully implemented. Using the
A literature review reflects that Narang developed a principle of work function modulation, the uniformly
dielectric modulation-based biosensor using DG-TFET doped structure has been transformed into a PIN structure
(Narang et al. 2011). This study generated a current sen- without the need of doping. An asymmetrical hetero
sitivity of 1010 for K values ranging from 1 to 12. In an dielectric with triple material controlled gates are inte-
essentially doped TFET based biosensor. Shafi et al. (2018) grated in a junctionless device for creating a biosensor in
measured a 107 fold increase in current sensitivity. Anand this work. Additionally, an 2 nm spacer has been intro-
et al. (2019) designed a doping free TFET biosensor with a duced across the gates to enhance the isolation between
ratio of 1010. In Ajay et al. (2017) a mathematical model is them. The primary mechanism of the biosensor relies on
developed for TFET based biosensors. A dielectric modu- the phenomenon of dielectric modulation, which entails
lation technique for a JLTFET biosensor with an encircling introducing dielectric variation across the cavity to
gate is proposed in Chakraborty et al. (2018). In Singh improve the effective coupling throughout the tunnelling
et al. (2017) an analytical mathematical model is developed junction.
for split gated biosensors (Raut and Nanda 2022). The electric field of the device is mostly influenced by
Sarkar and Banerjee (2012) designed a label-free the cavity that is carved along the dielectric of the control
detection ultrasensitive TFET-based nanowire biosensor in gate of the biosensor. The most purpose of this cavity is to
2021. Here the drain current sensitivity of the dielectric trap biomolecules across the tunneling area by altering the
modulated junctionless TFET biosensor is in the order of surface potential. Consequently, the output current increa-
108 accompanied by subthreshold slope = 57 mV/Dec with ses. For capturing biomolecules, a cavity has been etched
k = 10. Likewise, Anvarifard et al. (2021) designed a through the dielectric of the biosensor’s control gate. A
special SiGe source-based DMTFET in 2021 for detection cavity is etched after a layer of 2 nm dielectric is main-
of biomolecules. tained for isolation. It prefers to engrave the cavity at the
This article describes the construction of a biosensor tunnel intersection for greater impact and control The
device before moving on to a description of how it works simulations were carried out with the help of the Synopsis
and the development of a mathematical model. The out- TCAD, featuring the non-local band to band tunnelling
comes are then analyzed, and an appraisal is reached. model. Each mesh’s electric field is defined by the more
In the case of short channel SOI (silicon on insulator, authentic non-local model. Since conventional TFETs are
MOSFET), the lattice temperature has been fully studied challenging for fabrication, JLTFETs are in high demand.
by integrating the energy balance equation (Omura 1995). As a result, there is a nano-gap above the source region of
In order to reduce the effects of high electric fields, slightly the biosensors dielectric layer for the sensing part. A sec-
doped drains have been applied to fully depleted SOI tion of the dielectric layer is then photo lithographically
devices (Raut et al. 2023; Karthik and Pandey 2022b). etched to form the space. Source and discharge are then
generated by implanting gate material with the appropriate
work functions. This method is based on simulation only.
2 Description of device structure There is fabrication complexity as the proposed device is a
multigate structure with various work function. Therefore,
Figure 1 depicts the biosensor based on JLTFETs for high resolution photolithographic process is required but
detecting biomolecules. This is essentially a TFET devoid now days with advance technologies this can be fabricated
of any junction which is composed of 1 9 1019 uniformly in an easier way.
doped n-type dopants.

3 Developmemt of analytical model

The Poisson equation is used to express the distribution of

device potential, which is denoted as follows:
o2 /ðx; yÞ o2 /ðx; yÞ qNchan
þ ¼ ð1Þ
ox2 oy2 esi
Here, Nchan—channel doping, esi —silicon dielectric
permittivity, Lg—gate length, q—charge, /ðx; yÞ—channel
potential.
Fig. 1 2D representation of DM-JL-TFET as a biosensor

123

Content courtesy of Springer Nature, terms of use apply. Rights reserved.

Microsystem Technologies

Expression of surface potential of the device for various Coxh :Coxs

Coxbasef 1 ¼ ð11Þ
metals is depicted as: Coxh : þ Coxs
/js ðx; yÞ ¼ A0j þ A1j ðxÞy þ A2j ðxÞy2 ð2Þ Coxbasef 1 =dielectric layer capacitance
Total capacitance for M2 is represented as
For M1 metal, j = 1.
For M2 metal, j = 2. Cox2 :Cox22
Coxbasef 1 ¼ ð12Þ
For M3 metal, j = 3. Cox2 þ Cox22
for Lj1  x  Lj and 0  y  tsi eHfO þe
layer 1, C ox2 ¼ t2oxf SiO2
/js represents the device surface potential. e 2
And, layer 2, C ox22 ¼ tHfO
oxf
The device channel initiate at Lc0 and length of cavity
Total capacitance for M3 is represented as
Lca = Lc2 ? Lc3.
Employing 3 gate materials indicates change in flat band eHfO2
Coxbasef 3 ¼ ð13Þ
voltages in the device. Hence the work functions mathe- 2toxf
matically derived as:
toxf is thickness of front oxide layer.
Vflb;L1 ¼ /M1  /si ; Vflb;L2 ¼ /M2  /si ; Vflb;L3 Layers M2, M3 are entrapped with biomolecules.
¼ /M3  /si ð3Þ Coxbasefi :Coxbiomoleculef
Coxfi ¼ ; i ¼ 1; 2; 3 for M2; M3
/M1 ; /M2 ; /M3 represents various metal work functions. Coxbasefi þ Coxbiomoleculef
/si —work function of silicon. ð14Þ
Now,
For cavity, Coxbiomoleculef ¼ ebiomole
tcav .
Eg
usi ¼ v þ þ uB ð4Þ B. Electric field at the back gate M2, M3
2q
  
N cha d/1 ðx; yÞ Coxb1 /B1 ðxÞ  VGS1
uB ¼ V T ln ð5Þ  ¼ ð15Þ
ni dy y¼tsi Cs tsi

Here, thermal voltage, VT ¼ kT
q and ni represents the d/2 ðx; yÞ Coxb2 /B2 ðxÞ  VGS2
 ¼ ð16Þ
silicon intrinsic concentration. dy y¼tsi Cs tsi
A. Analytical model development for electric field 
d/3 ðx; yÞ Coxb3 /B3 ðxÞ  VGS3
Total capacitance for M1 is represented as: ¼ ð17Þ
 dy y¼tsi Cs tsi
d/1 ðx; yÞ Coxf 1 VGS11  A01ðxÞ
 ¼ ð6Þ eHfO2
dy y¼0 C s t si Coxbk ¼ ; /Ba ¼ back gate potential ð18Þ
toxb
esi
VGS1 ¼ VGS  VFB;L1; CS ¼ Coxbase :Coxbiomoleculesj
tsi Coxbj ¼ ; i ¼ 1; 2; 3 ð19Þ
 Coxbase þ Coxbiomoleculesj
d/2 ðx; yÞ Coxf 2 VGS2  A02ðxÞ
¼ ð7Þ
dy  y¼0 Cs tsi eSiO2
Coxbmoleculesj ¼ for j ¼ 1; M1 ð20Þ
tcav
VGS2 ¼ VGS  VFB;L2;
 ebiomolecule
d/3 ðx; yÞ Coxf 3 VGS3  A03ðxÞ Coxbmoleculesj ¼
tcav
for j ¼ 2; 3; M2; M3 ð21Þ
¼ ð8Þ
dy y¼0 Cs tsi
/B ðx; yÞ ¼ /ðx; yÞjy ¼ tsi ð22Þ
VGS3 ¼ VGS  VFB;L3; ð9Þ
/Bj ðx; yÞ denotes back gate potential for various metals,
The total capacitance for M1 is expressed as: j = 1, 2, 3
Coxbase1f :Cofixed /Bj ðx; yÞ ¼ A0j ðxÞ þ Aj1 ðxÞtsi
Coxf 1 ¼ ; ð10Þ
Coxbase1f þ Cofixed þ Aj2 ðxÞtsi2 ; for M1; M2; M3 ð23Þ
The third layer i.e., Layer 3 is
/j ðx; y ¼ 0Þ ¼ A0j denotes surface potential.
Cofixed ¼ eSiO2=tcav C. Considering surface potential continuity at interface

123

Content courtesy of Springer Nature, terms of use apply. Rights reserved.

 Microsystem Technologies

/1 ðL1; 0Þ ¼ /2 ðL1; 0Þ 4 Results and discussion

ð24Þ
/2 ðL2; 0Þ ¼ /3 ðL1; 0Þ
D. Electric field continuous at interface A. Mathematical model validation of the structure
  Figure 2 displays the proposed biosensor’s energy
d/1 ðx; yÞ d/2 ðx; yÞ bandgap. The proposed device structure’s performance is
¼ ð25Þ
dy x¼L1 dy x¼L1 validated by comparing it to existing structures as por-
  trayed in Table 1.The electric field is maximised when the
d/2 ðx; yÞ d/3 ðx; yÞ
¼ ð26Þ dielectric value across the cavity increases, leading to most
dy x¼L2 dy x¼L2 favourable alignment. The dotted line depicts the align-
Now, device built in potential is ment when the cavity is filled with a dielectric value of
  k = 12, whereas the solid line depicts the condition for
Na Ncha
Vbp ¼ VT ln ð27Þ k = 1 (Air). The alignment between the bends is reduced in
ni2 air-filled cavities. The likelihood of carriers tunnelling
As the device is equally doped. increases with the size of the bends.
So, Na = Ncha = Nd. Modelling of ssurface potential for different dielectrics
are shown in Fig. 3. The variation with respect to length is
VT lnðNd Ncha Þ
Hence,/3 ðL3 ; 0Þ ¼ Vbi þ VDS ¼ ð28Þ investigated. According to observations, the potential rises
ni2
throughout the channel. When three different materials are
Solving Eq. (2) the constants can be evaluated and are applied through the control gate in the source region, the
expressed below potential profile changes by one step. The potential profile
Coxf 1 Vgs1  A01ðxÞ changes to zero in the source region when the surface
A11 ðxÞ ¼  ð29Þ potential of simulated and expected are compared. The
Cs tsi
graph shows the relative accuracy of the model by com-
Coxf 2 Vgs2  A02ðxÞ
A21 ðxÞ ¼  ð30Þ paring simulated and modelled surface potential values to
Cs tsi each other (Fig. 4).
Coxf 3 Vgs3  A03ðxÞ
A31 ðxÞ ¼  ð31Þ B. Impact of drain current with respect to different k for
Cs tsi
  neutral biomolecule
Coxbf Coxf 1 Coxf 1 Figure 5 depicts the current variation for the dielectric
Cs tsi 1 þ Cs þ Coxbj  
A12 ðxÞ ¼   Vgs1  A01ðxÞ ð32Þ variation for fully filled nanogaps. The materials chosen as
Coxf 1
tsi 2 þ Cs biomolecules having various dielectric constants are air (1),
  ferro-cytochrome (4), bacteria phage T7 (6), zein (7),
Coxbf Coxf 2 Coxf 2
Cs tsi 1 þ Cs þ Coxbj   keratin (9) and gelatin (12). Biosensors are created by
A22 ðxÞ ¼   Vgs2  A02ðxÞ ð33Þ carving cavities present in gate oxide of the tunnel junc-
C
tsi 2 þ Coxfs 2
tion. Then, various biomolecules with different properties,
  such as gelatin, keratin, and others are used to fill these
Coxbf Coxf 3 Coxf 3
1 þ þ Coxbj  
Cs tsi

Cs
 cavities. With varying dielectric properties, the
A32 ðxÞ ¼ Vgs3  A03ðxÞ ð34Þ
Coxf 3
tsi 2 þ Cs

E. Model for drain current

By employing Kane’s model, the drain current equation
was developed i.e.
Z
IDS ¼ q GBT dV ð35Þ
" 3=2
#
jEj2 Ebg
GBT ¼ Akane exp Bkan ð36Þ
Ebg jEj

Here, E = average electric field, Ebg = energy band gap,

Akane = 4*1014S-1cm-1/2, Bkane = 1.9*107V/cms.

Fig. 2 Band bending structure of the proposed device

123

Content courtesy of Springer Nature, terms of use apply. Rights reserved.

Microsystem Technologies

Table 1 Comparison with the

References ION (A/lm) ION (A/lm) Ratios Vth (V) SS (mV/dec)
existing literature
Ghosh and Akram (2013) 36 9 10–6 5 9 10–14 6 9 108 0.4 70
–5 –13
Bal et al. (2014) 18 9 10 3 9 10 6 9 108 0.4 –
Darwin (2019) 1 9 10–6 1 9 10–13 6 9 107 0.8 48
Our work (k = 12) 3 9 10–4 2.4 9 10–17 1.2 9 1013 0.3 48

Fig. 5 Drain current at various biomolecules dielectric

Fig. 3 Variation of surface potential for various k values

Fig. 6 Drain current at various cavity length

Fig. 4 Surface potential of the modelled device vs. simulation results
modest for lengths of 10 nm, the ON current increases with
capacitances vary. Due to this change in capacitance, the lengths of 20 nm.
charge density across the junction changes resulting and The drain current increases as the cavity length increa-
enhancement of the surface potential. This increase in ses. However, the OFF current remains consistent. The
surface potential raises the electric field across the junction bends are precisely aligned. The greatest electric field for
as the k values increase, higher tunnelling results from a the cavity is at the tunnel junction at 20 nm. As a result,
higher electric field. more electrons can tunnel through the junction. This
C. Impact of drain current w.r.t. cavity length increases the drain current. However, as the length
To get the impact of drain current due to varying cavity increases further, the alignment is lost and tunnelling
length, in Fig. 6, the cavity length was swept from 10 to effects decrease. However, the simulated values and
30 nm while keeping k value as 12, gate voltage of 1 V and modelled values show close correspondence indicating that
a drain voltage of 1 V with cavity thickness of 5 nm,. It has the models predictions are correct.
been found that while the current sensitivity is relatively D. Impact of drain current w.r.t cavity width

123

Content courtesy of Springer Nature, terms of use apply. Rights reserved.

 Microsystem Technologies

Fig. 7 Drain current at various cavity width

Fig. 9 Sensitivity at various negatively charged biomolecules

Fig. 8 Drain current at various biomolecules charge

Change in drain current with respect to cavity thickness

is demonstrated in Fig. 7. Gate and drain voltage are held Fig. 10 Sensitivity at various positively charged biomolecules
constant at 20 nm, 1 V, and 1 V, respectively. It has been
found that as the thickness is increased the effective tun- increases. The presence of a negatively charged biomole-
nelling barrier also enhances, causing the reduction of drain cule-SiO2 interface prevents depletion of the p-type chan-
current. nel, necessitating a greater gate voltage than a neutral
interface to deplete the p-type substrate, resulting in a
E. Effect of charged biomolecule in performance reduction in tunnel width and thus resulting in reduction in
Figure 8 shows the effect of charged (both positive and sensitivity. For a constant gate voltage as shown in
negative) biomolecules in a fully filled nanogap. According Eq. (18), increasing negative charges results in a decrease
to the plotted graph, the drain current rises with rising in surface potential resulting in a decrease in current.
positive charges (right shift) and it falls with rising nega-
tive charges (left shift). This is generally represented by 2. Sensitivity analysis for positive charge biomolecule
equation of MOSFET i.e. MOSFET equation can be used to represent this. Fig-
ure 10 illustrates how a positive charge of magnitude
qNbiomolecule k
VGS ¼ ws þ /mes  0
; Cox0 ¼ ð37Þ 1 9 1012 C/cm2 will change depending on the dielectric.
Cox tox
The sensitivity increases with the volume of the positive
1. Analysis of sensitivity for negative charged charge, as shown in Fig. 10. The p-type channel is drained
biomolecules by the positive charge of biomolecules, which also
As seen in Fig. 9. It is evident that the sensitivity increases electron tunneling at the source-channel tunnel
decreases for increase in negative charge of biomolecules. junction. The sensitivity rises as a result. However, for a
However, for a constant charge, sensitivity increases as k constant charge, sensitivity increases with k.

123

Content courtesy of Springer Nature, terms of use apply. Rights reserved.

Microsystem Technologies

Fig. 11 Drain current at various Fill Factor

F. Fill factor impact on biosensor

Biosensor performance is determined by the biomole-
cule’s percentage present in the cavity. Figure 11. portrays
the impact of fill factor on drain current when cavities are
25% filled 75% filled, and completely filled. The drain
current increases when the cavity is completely filled
because the gate has complete control over the channel. As
the fill factor decreases, fewer biomolecules are present in
the cavity, leaving more space for air. Reduced capacitance
causes a reduction in the electric field across the tunnel
junction. Thus, the current decreases due to a decrease in Fig. 12 a ION/IOFF at various k-value. b ION at various k-value
the fill factor.
SVTH ¼ VTH ðair; k ¼ 1Þ  VTH ðbiom; k ¼ 12Þ
G. Analysis of sensitivity
1. Sensitivity of current 1:4  0:3 ¼ 1:1V
The change in current caused by a change in the H. Impact of dielectric variation in current ratio
dielectric constant is called as current sensitivity. The Figure 12a shows how variations in the material’s
control gate over the tunnel junction is etched with cavities. dielectric constant affect the drain current and current ratio.
The dielectric constant over the polar gate remains con- The band alignment improves as the dielectric increases,
stant. By putting various dielectric biomolecules into the and the ON-current rises along with it. Additionally,
cavities, the performance is assessed. Performance is because the OFF-state current is nearly same, the current
examined for cavities that are both filled (k = 12) and
empty (k = 1). The sensitivity of a current is calculated by
determining the current when the cavity is generally filled
with biomolecules w.r.t current when the cavity is com-
pletely filled with air both at a specific gate to source
voltage.

IDBiom  IDair 
Securrent ¼ VGS
IDair
1014  1016
¼
1016
13
¼ 10 :
It may attain two decades of current sensitivity. So, for a
high-k value of 12, this device exhibits a sensitivity of
1013.
2. Sensitivity of threshold voltage Fig. 13 Variation of Vth w.r.t k-value

123

Content courtesy of Springer Nature, terms of use apply. Rights reserved.

 Microsystem Technologies

J. Effect of k on subthreshold swing (SS)

The SS is one of the key factors that affects switching
speed. Mathematically it is expressed as:
oVGS
SS ¼ mV=dec ð38Þ
o log IDS
According to the curve in Fig. 14, the SS value drops as
the k-value rises for neuronal biomolecules. This is because
the probability of tunnelling increases as the electric field
increases with increasing k value.
K. A comparative assessment shown in Table 2 illustrates
that the proposed JLTFET can reach current sensitivities
two orders of magnitude higher than competing TFET-
based devices in the literature. In other words, this device
Fig. 14 Variation of Vth w.r.t k-value
can achieve ION/IOFF sensitivity of 1013 for current and
0.7 V for voltage change. Table 2 shows a comparison
Table 2 Analysis of various parameters of different biosensor device analysis as well as a comparison of relative effectiveness of
structures recent studies.
References Ion/Ioff Vth(V) SS (mV/Dec) L. When there is steric hindrance, more biomolecules
Chakraborty et al. (2018) 10 7
0.4 0.25
cannot enter because the immobilised biomolecules block
Anand et al. (2019) 108 – –
their entry first. In actuality, there is an obstacle that pre-
Chakraborty et al. (2018) 1010 0.7 –
vents the biomolecules from partially hybridizing since
they are likely to become immobile in the nanogaps. Dif-
Proposed device 1013 0.7 0.33
ferent patterns of immobilization within the nanogap are
considered, such as increasing, decreasing, concave, and
convex placement profiles (Narang et al. 2015), in order to
account for this on a TCAD tool for simulation. Table 3
switching ratio likewise rises, improving the sensitivity as provides sensitivity characteristics for various scenarios of
depicted in Fig. 12b. probe positioning within the nanocavities on the source and
I. Effect of change in dielectric on threshold voltage drain sides of the biosensor with k = 12.
Figure 13 illustrates the impact of dielectric constant From this table it is observed that when the cavity is
affect the threshold voltage. The constant current method is filled with more percentage of biomolecules the sensitivity
used to determine the threshold voltage for an ON-current is higher due the higher dielectric constant in the cavity.
value of 10–7. The threshold voltage appears to decrease as
k value increases. Better coupling and alignment result
from greater field as the k value rises, which raises the
probabilities of tunnelling.

Table 3 Spatial distribution of the biomolecules on the sensitivity

Nanocavity both sides are partition into Coloured area Percentage of Sensitivity
10 sections, each comprised of 5 parts represents presence of biomolecules
(each side) biomolecules covered at the
surface
SIDS

Case 1 30 % 7x1012
Case 2 50 % 2x1013
Case 3 60 % 5x1013

123

Content courtesy of Springer Nature, terms of use apply. Rights reserved.

Microsystem Technologies

5 Conclusion Ghosh B, Akram MW (2013) Junction less Tunnel Field Effect

Transistor. IEEE Electron Device Lett 34:584–586
Karthik, K. R., & Pandey, C. K., ‘‘A review of tunnel field-effect
This manuscript discusses the capabilities of a JLTFET transistors for improved ON-state behaviour.,’’ Silicon, 1–23,
based biosensor for detecting various biomolecules having (2022).
different dielectric constants. The proposed sensor’s rela- Karthik KR, Pandey C (2022b) K, ‘‘Design and investigation of a
novel gate-all-around vertical tunnel FET with improved DC and
tive current and voltage sensitivity are analysed, and values analog/RF parameters.’’ ECS Journal of Solid State Science and
of 1013 and 0.7 V are reported, respectively. The study is Technology 11(11):111007
primarily simulation based which is simulated using Sen- Narang R, Saxena M, Gupta RS, Gupta M (2011) Dielectric
taurus TCAD tool. The analytical model for the proposed modulated tunnel field-effect transistor—A biomolecule sensor.
IEEE Electron Device Lett 33(2):266–268
bio sensing device has also been formulated to obtain the Narang R, Saxena M, Gupta RS, Gupta M (2015) Comparative
drain current expression in this work. While comparing the analysis of dielectric-modulated FET. IEEE Trans Nanotechnol
analytical and simulated drain currents, it is found that both 14(3):427–435. https://doi.org/10.1109/TNANO.2015.2396899
are in good agreement with each other. Furthermore, this Omura Y (1995) An improved analytical solution of energy balance
equation for short-channel SOI MOSFET’s and transverse-field-
paper investigates the effects of location, charged biomo- induced carrier heating. IEEE Trans Electron Devices
lecule, fill factor, and cavity size. The increase in current as 42(2):301–306
the dielectric increases is caused by energy band modula- Raut P and Nanda U, ‘‘RF and linearity parameter analysis of
tion. TCAD is used to solve and validate the analytical junction-less gate all around (JLGAA) MOSFETs and their
dependence on gate work function,’’ Silicon 14 (10),
model of the proposed device. The most important 5427–35,2022.
parameter of the device i.e. switching ratio (Ion/Ioff) was Raut, P., Nanda, U., & Panda, D. K. , ‘‘Recent Trends on Junction-
found to be 1013 with a threshold voltage of 0.7 V. Fur- Less Field Effect Transistors in Terms of Device Topology,
thermore, the device subthreshold swing value (SS) Modeling, and Application’’., ECS Journal of Solid State
Science and Technology,2023.
achieved was 0.33 mV/Dec which is better as compared to Raut, P., Nanda, U., & Panda, D. K., ‘‘ RF with linearity and non-
other biosensors device. The device not only has much linearity parameter analysis of gate all around negative capac-
higher relative current sensitivity than conventional FET itance junction less FET (GAA-NC-JLFET) for different ferro-
and TFET-based biosensors, but it is also suitable for low- electric thickness.,’’ Physica Scripta, 97(10), 105809, 2022.
Raut P, Nanda U (2022) A Charge-Based Analytical Model for Gate
power applications. Therefore, a dielectric modulation- All Around Junction-Less Field Effect Transistor Including
based design provides a wide range of opportunities for Interface Traps. ECS Journal of Solid State Science and
future research and applications as well as a path towards Technology 11(5):051006
increased performance. Saha, R., Hirpara, Y., & Hoque, S., ‘‘Sensitivity analysis on dielectric
modulated Ge-source DMDG TFET based label-free biosen-
sor. IEEE Transactions on Nanotechnology,’’ 20,
552–560.,2021.
Data availability Not applicaple.
Sarkar D, Banerjee K (2012) Proposal for tunnel-field-effect-transis-
tor as ultra-sensitive and label-free biosensors. App Phys Lett
100(14):143108
References Shafi N, Sahu C, Periasamy C (2018) Virtually doped SiGe tunnel
FET for enhanced sensitivity in biosensing applications. Super-
Ajay, R. Narang, M. Saxena, and M. Gupta, ‘‘Modeling and lattices Microstruct 120:75–89
simulation investigation of sensitivity of symmetric split gate Singh D, Pandey S, Nigam K, Sharma D, Yadav DS, Kondekar P
junctionless FET for biosensing application,’’ IEEE Sensors J., (2017) A charge-plasma-based dielectric-modulated junctionless
vol. 17, no. 15, pp. 4853–4861, Aug. 2017. TFET for biosensor label-free detection. IEEE Trans Electron
Anand S, Singh A, Amin SI, Thool AS (2019) Design and Devices 64(1):271–278
performance analysis of dielectrically modulated doping-less Vanlalawmpuia, K., & Bhowmick, B. , ‘‘Analysis of Hetero-Stacked
tunnel FET-based label free biosensor. IEEE Sensors J Source TFET and Heterostructure Vertical TFET as Dielectri-
19(12):4369–4374 cally Modulated Label-Free Biosensors.,’’IEEE Sensors Jour-
Anvarifard MK, Ramezani Z, Amiri IS (2021) High Ability of a nal, 22(1), 939–947,2021.
Reliable Novel TFET-Based Device in Detection of Biomole- Wadhwa G, Raj B (2019) Design, simulation and performance
cule Specifies-A Comprehensive Analysis on Sensing Perfor- analysis of JLTFET biosensor for high sensitivity. IEEE Trans
mance. IEEE Sensors J 21(5):6880–6887 Nanotechnol 18:567–574
Bal P, Ghosh B, Mondal P (2014) Dual material gate junctionless
tunnel field effect transistor. J Comput Electron 13:230–234 Publisher’s Note Springer Nature remains neutral with regard to
Chakraborty A, Singha D, Sarkar A (2018) Staggered heterojunc- jurisdictional claims in published maps and institutional affiliations.
tionsbased tunnel-FET for application as a label-free biosensor.
Int J Nanoparticles 10(1–2):107–116 Springer Nature or its licensor (e.g. a society or other partner) holds
Darwin, S.; ASTS. Mathematical Modeling of Junctionless Triple exclusive rights to this article under a publishing agreement with the
Material Double Gate MOSFET for Low Power Applications. author(s) or other rightsholder(s); author self-archiving of the
J. Nano Res. 2019, 56, 71–79. accepted manuscript version of this article is solely governed by the
terms of such publishing agreement and applicable law.

123

Content courtesy of Springer Nature, terms of use apply. Rights reserved.

Terms and Conditions
Springer Nature journal content, brought to you courtesy of Springer Nature Customer Service Center GmbH (“Springer Nature”).
Springer Nature supports a reasonable amount of sharing of research papers by authors, subscribers and authorised users (“Users”), for small-
scale personal, non-commercial use provided that all copyright, trade and service marks and other proprietary notices are maintained. By
accessing, sharing, receiving or otherwise using the Springer Nature journal content you agree to these terms of use (“Terms”). For these
purposes, Springer Nature considers academic use (by researchers and students) to be non-commercial.
These Terms are supplementary and will apply in addition to any applicable website terms and conditions, a relevant site licence or a personal
subscription. These Terms will prevail over any conflict or ambiguity with regards to the relevant terms, a site licence or a personal subscription
(to the extent of the conflict or ambiguity only). For Creative Commons-licensed articles, the terms of the Creative Commons license used will
apply.
We collect and use personal data to provide access to the Springer Nature journal content. We may also use these personal data internally within
ResearchGate and Springer Nature and as agreed share it, in an anonymised way, for purposes of tracking, analysis and reporting. We will not
otherwise disclose your personal data outside the ResearchGate or the Springer Nature group of companies unless we have your permission as
detailed in the Privacy Policy.
While Users may use the Springer Nature journal content for small scale, personal non-commercial use, it is important to note that Users may
not:

1. use such content for the purpose of providing other users with access on a regular or large scale basis or as a means to circumvent access
control;
2. use such content where to do so would be considered a criminal or statutory offence in any jurisdiction, or gives rise to civil liability, or is
otherwise unlawful;
3. falsely or misleadingly imply or suggest endorsement, approval , sponsorship, or association unless explicitly agreed to by Springer Nature in
writing;
4. use bots or other automated methods to access the content or redirect messages
5. override any security feature or exclusionary protocol; or
6. share the content in order to create substitute for Springer Nature products or services or a systematic database of Springer Nature journal
content.
In line with the restriction against commercial use, Springer Nature does not permit the creation of a product or service that creates revenue,
royalties, rent or income from our content or its inclusion as part of a paid for service or for other commercial gain. Springer Nature journal
content cannot be used for inter-library loans and librarians may not upload Springer Nature journal content on a large scale into their, or any
other, institutional repository.
These terms of use are reviewed regularly and may be amended at any time. Springer Nature is not obligated to publish any information or
content on this website and may remove it or features or functionality at our sole discretion, at any time with or without notice. Springer Nature
may revoke this licence to you at any time and remove access to any copies of the Springer Nature journal content which have been saved.
To the fullest extent permitted by law, Springer Nature makes no warranties, representations or guarantees to Users, either express or implied
with respect to the Springer nature journal content and all parties disclaim and waive any implied warranties or warranties imposed by law,
including merchantability or fitness for any particular purpose.
Please note that these rights do not automatically extend to content, data or other material published by Springer Nature that may be licensed
from third parties.
If you would like to use or distribute our Springer Nature journal content to a wider audience or on a regular basis or in any other manner not
expressly permitted by these Terms, please contact Springer Nature at

[email protected]