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Frequency Response: Bipolar Transistor

The document discusses the frequency response of bipolar transistors, which cannot be modeled as ideal transistors due to their internal capacitances. It introduces an expanded small-signal hybrid-pi model of the bipolar junction transistor to analyze its frequency characteristics. This model includes various internal resistances and capacitances. The document then examines how these internal components affect the short-circuit current gain and cut-off frequency of the transistor. It also describes the Miller effect, where the reversed-biased junction capacitance cannot be ignored as it has a multiplication effect on circuit applications.

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Bhandari Prakash
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43 views8 pages

Frequency Response: Bipolar Transistor

The document discusses the frequency response of bipolar transistors, which cannot be modeled as ideal transistors due to their internal capacitances. It introduces an expanded small-signal hybrid-pi model of the bipolar junction transistor to analyze its frequency characteristics. This model includes various internal resistances and capacitances. The document then examines how these internal components affect the short-circuit current gain and cut-off frequency of the transistor. It also describes the Miller effect, where the reversed-biased junction capacitance cannot be ignored as it has a multiplication effect on circuit applications.

Uploaded by

Bhandari Prakash
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PPTX, PDF, TXT or read online on Scribd
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Frequency Response: Bipolar Transistor.

• So far, we considered the frequency response of circuits as a


function of external resistors and capacitors.
• While finding the F.R of a transistor, we assumed the transistor to be
ideal i.e. we neglected its internal capacitances.
• However, for the BJT and the FETs the case is not same as of ideal
transistor it is because we can’t neglect its internal capacitances
which influence the high-frequency response of circuits.
• In this section, we will use an expanded small-signal hybrid- pi
model of the BJT in order to analyze the frequency characteristics of
the BJT.
• Rb is the base series resistance between the external base terminal B
and the internal base region B’.
• Rex is the emitter series resistance between the external emitter
terminal and the internal emitter region.
• Rc is the collector series resistance between the external and internal
collector connections.
• R pi is the forward-biased junction diffusion resistance.
• C pi is the forward- biased junction capacitance.
• R (μ) is the reversed-biased junction diffusion resistance.
• C (μ) is the reversed-biased junction capacitance.
The value of C(μ) is usually smaller than C pi; however, because of a
phenomenon known as the Miller Effect, C (μ) cannot be ignored.
Short –Circuit Current Gain
Let’s determine the short- circuit gain of the BJT in order to understand
the frequency effects. For this, we will simplify an expanded hybrid pi
equivalent circuit, in which we will neglect the parasitic resistance, rb,
rex, rc, the diffusion resistance r (μ) and the substrate capacitance Cs.
Keep in mind that the transistor must still be biased in the forward-
active region. We will determine the small-signal current gain
Ai = Ic/Ib;

Cut-off Frequency
When, we see the expression of current gain: the small- signal current
gain decreases with increasing value of frequency. But, there is a value
of frequency at which gain becomes one and that frequency is called
cut-off frequency.
Miller Effect and Miller Capacitance
As, previously mentioned that C(μ) can not be neglected because of a
phenomenon know as the Miller effect, or feedback effect.
The C(μ) is a multiplication effect in circuit applications.

Let’s determine the Miller Capacitance Value.


• We will take a different approach other than that we did previously(i.e.
KCL).
• We will treat C (μ) as a two-port network and will develop an
equivalent circuit, with elements between the input base and ground
and between the output collector and ground.

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