Lecture 7: Turn On Methods of SCR: Dr. Aadesh Kumar Arya
Lecture 7: Turn On Methods of SCR: Dr. Aadesh Kumar Arya
Established in 1998
of minority carriers at this junction. At a particular voltage, there will be an Avalanche Breakdown at the inner junction J 2 as a
result of minority charge carriers colliding with atoms and releasing even more minority charge carriers.
This voltage is known as Forward Breakover Voltage VBO. At this voltage, the junction
J2 becomes forward biased and the SCR turns into conduction state. A large current flows through
the SCR (from Anode to Cathode, which is limited by the load resistance) with a very low
voltage drop across it.
During the turn ON state, the forward voltage drop across the SCR is in the range of 1 to 1.5 volts and this
may be increased with the load current
near to VBO, we can turn ON the SCR by increasing the junction temperature (J 2). At a particular temperature, the reverse bias
of the junction breaks down an the device starts to conduct.
This triggering occur in some circumstances particularly when it the device temperature is more (also called false triggering).
This type of triggering is practically not employed because it causes the thermal runaway and hence the device or SCR may
be damaged.
So, the junction J2 behaves as a capacitor (J1 and J3 as conducting plates with a dielectric J2) due to the space charges in the
depletion region.
The charging
current of the capacitor is given as:
In this method, light rays with appropriate wavelength and intensity are allowed to strike
the junction J2.
The bombarded energy particles from the light (neutrons or photons) causes to break
electron bonds as a result, new electron – hole pairs are formed in the device.
As the number of charge carriers are increased, there is an instantaneous increase in the
flow of current, causing the SCR to turn ON.
NOTE: For successfully turning ON the SCR with the help of light radiation, the rate of
change of applied voltage (dv / dt) must be high.
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Gate Triggering
This is most common and most efficient method to turn ON the
SCR. When the SCR is forward biased, a sufficient positive
voltage at the gate terminal injects some electrons into the
junction J2.
This results in an increase in the reverse leakage current and
hence the breakdown of junction J2 occurs even at a voltage
Depending on the size of the SCR, the gate current varies from
lower than the VBO.
a few milli-amps to 250 milli-amps or more.
If the gate current applied is more, then more electrons are
injected into the junction J2 and results to come into the
conduction state at much lower applied voltage.
DC Gate Triggering
In this triggering, a sufficient DC voltage is applied between the gate and cathode terminals in such a way that the gate is
made positive with respect to the cathode. The gate current drives the SCR into conduction mode.
In this method, a continuous gate signal (DC Voltage) is applied at the gate and hence it causes internal power dissipation
(or more power loss). Another important drawback is there is no isolation between the power and control circuits (as they
both are DC).
AC Triggering:
This is the most commonly used method of turning on the SCR, especially in AC
applications. With proper isolation between the power and control circuits (using
transformers), the SCR is triggered by the phase-shift AC voltage derived from the main
supply. The firing angle is controlled by changing the phase angle of the gate signal.
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However, only one half of the cycle is available for the gate drive to control the firing angle and for the next half of
the cycle, a reverse voltage is applied between the gate and cathode.
This is one of the limitation of AC triggering and the other is need for separate step down or pulse transformer to
supply the voltage to gate drive from the main supply.
Pulse Triggering
The most popular method of triggering the SCR is the pulse
triggering. In this method, gate is supplied with single pulse or a
train of high frequency pulses.
The main advantage of this method is that gate drive is
discontinuous or doesn’t need continuous pulses to turn the
SCR and hence gate losses are reduced in greater amount by
applying single or periodically appearing pulses. For isolating
the gate drive from the main supply, a pulse transformer is used.
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