ELECTRONIC CIRCUIT DESIGN 1

402058

MOS Field Effect

Transistor (MOSFET)
 ACKNOWLEDGEMENT

This slide is adopted from lecture slides of

Microelectronic Circuits Text by Sedra and Smith,
Oxford Publishing.

Oxford University Publishing

Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033)

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 INTRODUCTION

 IN THIS CHAPTER YOU WILL LEARN

 The physical structure of the field effect transistor and
how it works.
 How the voltage between two terminals of the transistor
controls the current that flows through the third terminal,
and the equations that describe these current-voltage
relationships.
 How to analyze and design circuits that contain
MOSFETs.

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 INTRODUCTION

 IN THIS CHAPTER YOU WILL LEARN

 How the transistor can be used to make an amplifier.
 How to obtain linear amplification from the fundamentally
nonlinear MOSFET.
 The three basic ways for connecting a MOSFET to be
able to construct amplifiers with different properties.
 Practical circuits for MOSFET amplifiers that can be
constructed by using discrete components.

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 INTRO TO MOSFET

 MOSFET was found in 1960 at Bell Laboratories.

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 two n-type doped
1. DEVICE STRUCTURE
regionsAND
(drain, source)
PHYSICAL OPERATIONlayer of SiO separates
2
source and drain
 N-channel enhancement-type MOSFET
metal, placed on top of
SiO2, forms gate
electrode

one p-type doped region

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 1.1. OPERATION

 Operation at zero voltage gate

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 1.1. OPERATION

 Create a channel for current flow

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 1.1. OPERATION

 Create a channel for current flow

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 1.1. OPERATION

 Create a channel for current flow this induced channel is

also known as an
inversion layer

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 1.1. OPERATION

 Apply vDS

vOV vDS

The voltage
differential between
both sides of n-
channel increases
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with vDS.
 1.1. OPERATION

saturation occurs
once vDS > vOV

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 1.1. OPERATION

 The equation used n represents mobility of electrons at surface of the

n-channel in m2 / Vs
              
to define iD  nvDS 
(eq5.7) iD   C oxWvOV   in A
depends on       L 
charge per unit   
relationship btw length of electron
n -channel
vDS and vOV.
drift velocity
in C / m in m2 / Vs

 vDS << vOV (eq5.14) iD   nC ox 

W
 vOV  12 vDS  vDS in A
L
 vDS < vOV 1 W 2
 vDS => vOV (eq5.17) iD   nC ox  vOV in A
2 L
 vDS >> vOV 1
 nbeen
W 2
(eq5.23) i
This has
D  not C ox  vOV  1  yet!
covered vDS  in A
2 L
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 1.1. OPERATION (NMOS)

W
For all region: VOV = VGS – VTN, Kn  K , K n'  n Cox
'
n
Cut-off region: VOV  0: L
iD = 0
Triode region: 0  VDS  VOV:
 VDS 
iD  K n  VOV   VDS
 2 
Saturation region: 0  VOV  VDS:
Kn 2
iD  VOV (1  VDS )
2
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 2. THE P-CHANNEL MOSFET

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 3. COMPLEMENTARY MOS (CMOS)

CMOS employs MOS transistors of both polarities

more difficult to fabricate
more powerful and flexible
now more prevalent than NMOS or PMOS

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 SYMBOLS

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 4. THE VI CHARACTERISTIC

Modes of operation:
 Cut – off
 Triode
 Saturation (use in amplifier circuits)

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 4. THE VI CHARACTERISTIC

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 4. THE VI CHARACTERISTIC

NMOS

Consider the condition of vGS to know mode of operation

Cut – off mode if
vGS if Vtn
Triode or saturation mode
vGS  Vtn  vOV
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 4. THE VI CHARACTERISTIC

 Triode or saturation mode if vGS  Vtn  vOV

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 4. THE VI CHARACTERISTIC

PMOS

Consider the condition of vSG to know mode of operation

Cut – off mode if
vSG if| Vtp |
Triode or saturation mode
vSG | Vtp |  | vOV |
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 4. THE VI CHARACTERISTIC

 Triode or saturation mode if vSG | Vtp |  | vOV |

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 1.1. OPERATION (PMOS)

W
For all region: VOV = VGS – VTP, Kp  K , K p'   p Cox
'
p
Cut-off region: VOV > 0: L
iD = 0
Triode region: 0  |VDS|  |VOV|:
 VSD 
iD  K p  VOV   VSD
 2 
Saturation region: 0  |VOV|  |VDS|:
Kp
iD  V (1  VSD )
2
OV
2
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 EXAMPLE 5.3

RD and RS = ?

Transistor operates at ID = 0.4mA

and VD = +0.5V.
Vt = 0.7V
nCox = 100A/V2,
L = 1m, and W = 32m.
Neglect the channel-length
modulation effect ( = 0).
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 EXAMPLE 5.6

 Determine mode of operation

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 HOMEWORK

 Sedra/Smith, Microelectronic Circuits, 7e.

 Chapter 5 problems:
5.44, 5.47, 5.49, 5.54
5.55, 5.57, 5.59

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 5. APPLYING MOSFET IN AMPLIFIER
DESIGN

 An amplifier may be designed by transistor and

series resistance.

 Appropriate biasing is important to ensure linear

gain, and appropriate input voltage swing.
 Small-signal model is employed to model the amp’s
operation.

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 5.1. BIASING FOR LINEAR
AMPLIFICATION
  thisequation
  issimply
 ohm's
 law  
1 2
(eq5.34) VDS  VDD   kn  VGS  Vt   RD
   2       
Vsource ID RD

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 5.1. BIASING FOR LINEAR
AMPLIFICATION

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 LOAD LINE

dc bias output
voltage voltage

input voltage
to be
amplified

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 MOSFET TRANSCONDUCTANCE

W
g m  nCox VOV
L
W 2I D
 2 nCox I D 
L VOV

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 5.2. SMALL SIGNAL MODEL

The resistor (ro) takes on value

10kOhm to 1MOhm and
represents channel-length
modulation.
ro = VA / ID

THE HYBRID – π MODEL

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 EXAMPLE 7.3

DC bias

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 EXAMPLE 7.3

Small signal equivalent circuit

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 5.2. SMALL SIGNAL MODEL

THE T MODEL

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 6. CHARACTERIZING AMPLIFIERS

vin Rin
Rin  vin  vsig
iin Rin  Rsig

vx RL
Ro  vi  0 vo  Avo vi
ix RL  Ro

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 6. CHARACTERIZING AMPLIFIERS

vo
Open circuit voltage gain: Avo  RL
vi
vo RL
Voltage gain of the amplifier: Av   Avo
vi RL  Ro
vo Rin RL
Overall voltage gain: Gv   Avo
vsig Rin  Rsig RL  Ro
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 7. 3 BASIC CONFIGURATIONS

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 7.1. COMMON SOURCE (CS)
AMPLIFIER

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 7.1. COMMON SOURCE (CS)
AMPLIFIER

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 7.2. COMMON GATE (CG) AMPLIFIER

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 7.3. COMMON DRAIN (CD) OR
SOURCE FOLLOWER AMPLIFIER

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 SUMMARY

IN THIS CHAPTER, YOU HAVE LEARNED:

 the physical structure of the field effect transistor and how
it works.
 how to analyze and design circuits that contain
MOSFETs.
 how the transistor can be used to make an amplifier.
 the three basic ways for connecting a MOSFET
 practical circuits for MOSFET amplifiers

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 HOMEWORK

Sedra/Smith, Microelectronic Circuits, 7e.

Chapter 7 problems:
7.30, 7.31, 7.33
7.72, 7.73
7.97
Prepare Chapter 9: Differential & multistage amplifiers

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