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Unit 3

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24 views30 pages

Unit 3

Uploaded by

[C3B] Aqilah Husna
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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BASIC ELECTRONIC

UNIT 3 : BIPOLAR
JUNCTION TRANSISTOR
(BJT)
LEARNING OBJECTIVES
The objectives of this unit are to:
• Describe the basic structure of the BJT (bipolar junction
transistor)
• Explain how a transistor is biased and discuss the
transistor currents and their relationships
• Discuss transistor parameters and characteristics and
use these to analyze a transistor circuit
• Discuss how a transistor is used as a voltage amplifier
• Discuss how a transistor is used as an electronic switch
• Identify various types of transistor package
configurations
3.1. INTRODUCTION TO BJT
• BJT: is a three terminal device in which current flowing
between two terminals can be controlled by a signal on the
third terminal.
3.2. TRANSISTOR CONSTRUCTION
• BJT is constructed with three doped semiconductor
regions separated by two p-n junctions as shown in
Figure 4.1.
• The three regions are called emitter, base and
collector.
• Voltage between 2 terminals controls current through the
3rd terminal.

A.Two types of bipolar transistors are npn and pnp.


1.NPN – consists of 2 N-type regions separated by a P-type.
2.PNP – consists of 2 P-type regions separated by an N-type.

B.A wire lead connects to each of the three regions as labeled


E (Emitter), B (Base) and C ( Collector).
TRANSISTOR CONSTRUCTION
• Figure 3.1: Transistor Structures and Symbols.
3.4. TRANSISTOR CURRENTS

Figure 4.3: Current in the BJT Transistor


3.5. TRANSISTOR BIASING
GENERAL BIAS MODES
GENERAL BIAS MODES
i. Forward active mode ( Amplifier Circuit)
• VBE > 0 (Base – Emitter at Forward Bias) ;
• VBC < 0 ( Base - Collector at Reverse Bias)

ii. Cut – off mode ( Switching circuit – OFF condition )


• VBE < 0 (Base – Emitter at Reverse Bias ) ;
• VBC < 0 ( Base - Collector at Reverse Bias )

iii.Saturation mode ( Switching circuit – ON condition)


• VBE > 0 (Base – Emitter at Forward Bias);
• VBC > 0 ( Base - Collector at Forward Bias )
3.6. TRANSISTOR CONFIGURATION
CIRCUIT
Three type of BJT Configuration:
1. COMMON EMITTER
2. COMMON BASE
3. COMMON COLLECTOR
3.6.1. COMMON EMITTER (CE)
• CE = when a Emitter transistor is connected ground
terminal.
• Input = Base, Output = Collector, Ground = Emitter.
COMMON EMITTER (CE)

dc, sometime it called static forward current transfer ratio for common
emitter and is usually designated hFE on transistor data sheets.
Figure 4.5: Characteristics of a silicon transistor in the common-emitter
configuration
3.6.2. COMMON BASE (CB)

• CB= when a Base transistor is connected ground


terminal.
• Input =Emitter, Output = Collector, Ground = Base
• Because IC ≈ IE,
▫  dc near unity.
IC
 dc 
IE
Common Base - Input Characteristic for Common Base
configuration
3.6.3. COMMON COLLECTOR (CC)
• CC= when a Collector transistor is connected the common terminal.
• Input =Base, Output = Emitter, Ground = Collector
CC- Input Characteristic for Common Collector
configuration
3.7. DC BIASING
• Bias establishes the dc operating point for proper linear
operation of an amplifier.
• If an amplifier is not biased with correct dc voltages on the
input and output, it can go into saturation or cutoff when an
input signal is applied.

Figure 4.12: Examples of linear and nonlinear operation of an inverting amplifier (the triangle symbol).
3.7.1 Operating Points
• A transistor must be properly biased with a dc voltage in order to
operate as an amplifier.
• A dc operating must be set, if the variation input terminal are
amplified and properly reproduced at the output terminal.
• The dc operating point is often referred to as Q-point ( quiescent
point).

Figure 4.13: Various operating


points within the limits of
operation of a transistor
3.7.2 CURRENT AND VOLTAGE ANALYSIS
• During operation in Forward-Active region, VBB forward-biases the base-
emitter junction, and VCC reverse-biases the base-collector junction.
• When base-emitter junction is forward-biased, it is like a forward-biased diode
and has a nominal voltage drop of VBE = 0.7 V.

Figure 4.15: A dc-biased transistor circuit with variable bias voltages (VBB and VCC) for
generating the collector characteristic curves shown in part (b).
Current And Voltage Analysis –con’t
• Considering the loop at the input side i.e. the base-emitter
loop (apply KVL),

• Considering the loop at the output side


▫ i.e. the collector-emitter loop C
3.7.3 DC LOAD LINE
• DC load line is the line of output characteristic of a transistor
circuit which gives the value of Ic and VCE corresponding to
the dc condition.

Figure 4.16: Load-line analysis and movement of Q-point with increasing levels of IB.
DC Load Line –Con’t
• Equation from the circuit;

To Plot the dc Load Line


• i. A point is selected at maximum VCE, i.e. (During Cutoff)

• ii. Another point is selected at maximum Ic, i.e. (During


Saturation)
3.7.4 TRANSISTOR DATA SHEET
3.8. TRANSISTOR AMPLIFYING AND
SWITCHING CIRCUIT
3.8.1 TRANSISTOR AS AN AMPLIFIER

Figure 4.17: Basic Transistor Amplifier Circuit


r 'e

Transistor As An Amplifier –con’t


• Amplification is process of increasing the amplitude of an
electrical signal.
• The current gain is called  where, Ai    I c
Ib
• AC input voltages produces an ac base current much larger
ac collector current. The ac collector current produces ac
voltage across RC.
• Thus producing and amplified, but inverted, reproduction of
the ac input voltage in the active region of operation.

r ' e is the internal ac emitter


resistance of the EBJ
during forward biased

D2a 9.2
r 'e

3.8.2 TRANSISTOR AS A SWITCH


• When used as an electronic switch, a transistor is normally
operated alternately in cutoff(off) and saturation(on).
• Digital circuit make used of the switching characteristics of
transistors.
r 'e

Transistor As A Switch - con’t


a. During Cutoff
• To bias the transistor in cutoff,
▫ VBB  0. Since VBB = 0, IB = 0 .

• These causes both BE and BC junctions to be reverse biased.


The transistor is now in cutoff region.
• In this condition, ideally, an open between collector and
emitter as shown in the equivalent circuit.
• All currents are zero and VCE(cutoff) = VCC
r 'e

Transistor As A Switch - con’t


b. During Saturation
• To bias the transistor in saturation region, both BE and BC
junctions has to be forward biased.
• To ensure this VBB should be high enough to ensure the IB is large
enough to cause the IC to reach its saturation. In this condition,
there is, ideally, a short between collector and emitter. 
V CC V CE ( SAT )
• Formula for collector saturation current is I C ( SAT ) 
R C

• Since VCE(sat) is very small in compared to VCC it can usually be


neglected. The minimum value of base current needed to produce
saturation is
• IB should be significantly greater than IB(min) to keep the
transistor well into saturation. To achieve this, IB(min) used is
usually twice the calculated value. I C ( SAT )
I B (min)

 DC
r 'e

3.8.2.1 A SIMPLE APPLICATION


Figure 3.17: A transistor used to switch an LED on and off.

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