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Lecture 2

The document discusses the basics of bipolar junction transistors (BJTs). It can be summarized as follows: 1. A BJT has three doped regions - an emitter, a base, and a collector. The emitter is heavily doped, the base is lightly doped, and the collector is intermediately doped. 2. When forward bias is applied to the emitter-base junction, electrons are injected from the emitter into the base. Most of these electrons then diffuse into the collector. 3. The current flowing from the emitter to the collector (IC) is approximately equal to the current flowing from the emitter to the base (IB) multiplied by the transistor's

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18 views33 pages

Lecture 2

The document discusses the basics of bipolar junction transistors (BJTs). It can be summarized as follows: 1. A BJT has three doped regions - an emitter, a base, and a collector. The emitter is heavily doped, the base is lightly doped, and the collector is intermediately doped. 2. When forward bias is applied to the emitter-base junction, electrons are injected from the emitter into the base. Most of these electrons then diffuse into the collector. 3. The current flowing from the emitter to the collector (IC) is approximately equal to the current flowing from the emitter to the base (IB) multiplied by the transistor's

Uploaded by

Sammie
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PPTX, PDF, TXT or read online on Scribd
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Bipolar

Junctio
n
Transis
tor
(BJT)
BJT Fundamentals
A transistor • Collector
has three • Base
doped • Emitter
regions…

Kinds of • NPN
BJT • PNP
• Emitter – The Unbiased
heavily doped
• Base – lightly Transistor
doped
• Collector-
Dopi intermediate or
ng between the
heavy doping of
Leve the emitter and
ls the lightly
doped base
• Physically the
largest region
of the three.
Doping Level
Emitte • Heavily doped
r • Its job is to emit or inject
• Thin
current carriers
region andto the Base
Lightly
region • doped
Current carriers injected to
Base the Base does not flow out
the Base lead
region • Current carriers injected to
Collect • Collector
the Base are passed to the
Moderately doped
or • Attracts the current
carriers
region
Emitter and Transistor is
physically a back-
Collector Diodes to-back diode.
The transistor has
two (2) junctions…
• Between the emitter
and the base
• Emitter-base diode or
emitter diode
• Between the collector
and the base
• Collector-base diode or
collector diode
Before and After Because of their
Diffusion repulsion for each
other, the free
electrons in the n
regions will spread in
free electrons in the n
all directions
region will diffuse
across the junction
and recombine with
the holes in the p
region
The Biased
Transistor
The Biased Transistor
The heavily doped
emitter has to emit
or inject its free
electrons
The lightlyinto the
doped
base also base.
has to pass
emitter-injected
electrons on toisthe
The collector so
collector.
named because it
collects or gathers most
of the electrons from the
base.
Base Electrons
At the instant that forward bias is
applied to the emitter diode electrons
in the emitter have not yet entered
the base region.
Theoretically, these free electrons
can flow in either of two directions.
• First, they can flow to the left
and out of the base, passing
through on the way to the
positive source terminal.
• Second, the free electrons can
flow into the collector.
Collector Electrons

Almost all the free


electrons go into the
collector. Once they
are in the collector,
they feel the
attraction of the
source voltage.
Summary…

The thin and lightly


forward-biases the These electrons flow
doped base gives
emitter diode, forcing through the collector,
almost all these
the free electrons in through , and into the
electrons enough time
the emitter to enter the positive terminal of
to diffuse into the
base. the voltage source.
collector.
TRANSISTOR CURRENTS
How the Currents Compare
 Emitter is the source of the electrons, it has the largest current.
 Since most of the emitter electrons flow to the collector, the collector current is almost as large as
the emitter current.
 The base current is very small by comparison, often less than 1 percent of the collector current.
Collector characteristic for a Common-Base
Amplifier
Three basic
regions
Active
Cut-off
Saturat
ion
Regions In the active region the base–emitter junction is forward-
biased, whereas the collector-base junction is reverse-biased
… In the cutoff region the base–emitter and collector–base
junctions of a transistor are both reverse-biased.
In the saturation region the base–emitter and collector–base
junctions are forward-biased.
𝑰 𝑬= 𝑰 𝑪 + 𝑰 𝑩
Relation of (Active Region)
Currents
𝑰 𝑩≪𝑰𝑪
The
Alpha &
Beta

: ratio of the collector


current and emitter current

: ratio of the collector


current and base current, also
know as the current gain
COMMON-
EMITTER
CONFIGURAT
In the active region of
ION
a common-emitter
amplifier, the base–
emitter junction is
forward-biased,
whereas the
collector–base
junction is reverse-
biased.
COMMON-EMITTER
CONFIGURATION
Characteristics of a silicon
transistor in the common-
emitter configuration:
(a) collector
characteristi
cs;
(b) base
characterist
ics.
COMMON-EMITTER
CONFIGURATION
𝑰 𝑪=∝ 𝑰 𝑬 + 𝑰 𝑪𝑩𝑶 (dc mode)

𝜷
+ )+ 𝜶=
𝜷 +𝟏
+
𝜶
𝜷=
𝟏− 𝜶
𝑰 𝑬 = 𝑰 𝑩 ( 𝜷 ❑ +𝟏)
COMMON-EMITTER
CONFIGURATION
DC Biasing BJTs

The term “BIAS” is to


establish a fixed level of
current and voltage
DC Biasing
For the BJT
BJTs
to be biased • The base–emitter junction must be
in its linear forward-biased (p-region voltage more
positive), with a resulting forward-bias
or active voltage of about 0.6 V to 0.7 V.
operating • The base–collector junction must be
reverse-biased (n-region more
region the positive), with the reverse-bias voltage
being any value within the maximum
following limits of the device.
must be
Operating regions of BJTs

Linear- Cutoff- Saturation-


region region region
operation: operation: operation:
• Base– • Base– • Base–
emitter emitter emitter
junction junction junction
forward- reverse- forward-
biased biase biased
• Base– • Base– • Base–
collector collector collector
junction junction junction
reverse- reverse- forward-
biased biased biased
Fixed bias
configuration
Forward-bias of Base-
Emitter
• Consider:
Collector-emitter loop

𝐼 𝐶= 𝛽 𝐼 𝐵
𝑉 𝐶𝐸 + 𝐼 𝐶 𝑅 𝐶 −𝑉 𝐶𝐶 =0
𝑉 𝐶𝐸 =𝑉 𝐶𝐶 − 𝐼 𝐶 𝑅 𝐶
𝑉 𝐶𝐸 =𝑉 𝐶
𝑉 𝐵𝐸 =𝑉 𝐵
Transistor Saturation
The term
saturation is
applied to any
system where
levels have reached
their maximum
• saturation level may rise
values.
or drop.
Transistor
Saturation
For the ideal graph,

Assume:

Therefore:

=
𝑽 𝑪𝑬 =𝑽 𝑪𝑪 − 𝑰 𝑪 𝑹 𝑪
𝑽 𝑪𝑬 =𝑽
𝐼 𝐶 =0
𝑪𝑪

Load-
Line
Analysi
s
Load-Line
Analysis
𝑽 𝑪𝑬 =𝑽 𝑪𝑪 − 𝑰 𝑪 𝑹𝑪
𝑽 𝑪𝑪
𝑰 𝑪=
𝑹𝑪
𝑽 𝑪𝑬 = 𝟎

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