Ratioed Logic

(will come back to

logical effort
concept later)

1
© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
Ratioed Logic

VDD VDD VDD

Resistive Depletion PMOS

Load RL Load VT < 0 Load
VSS
F F F
In1 In1 In1
In2 PDN In2 PDN In2 PDN
In3 In3 In3

VSS VSS VSS

(a) resistive load (b) depletion load NMOS (c) pseudo-NMOS

Goal: to reduce the number of devices over complementary CMOS

2
© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
Ratioed Logic
VDD

• N transistors + Load
Resistive
• VOH = V DD
Load RL

• VOL = RPN

F RPN + RL

In1 • Assymetrical response

In2 PDN
In3 • Static power consumption

• tpL= 0.69 RLCL

VSS

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© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
Active Loads
VDD VDD

Depletion PMOS
Load VT < 0 Load
VSS
F F
In1 In1
In2 PDN In2 PDN
In3 In3

VSS VSS

depletion load NMOS pseudo-NMOS

4
© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
Pseudo-NMOS
VDD

F
CL
A B C D

VOH = VDD (similar to complementary CMOS)

V OL 2 kp
  2
k n  VDD – V Tn  V OL – -------------  = ------  V DD – VTp 
 2  2

kp
V OL =  VDD – V T  1 – 1 – ------ (assuming that V T = V Tn = VTp )
kn

SMALLER AREA & LOAD BUT STATIC POWER DISSIPATION!!!

5
© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
 Pseudo-NMOS VTC

3.0

2.5

2.0 W/Lp = 4

1.5
Vout [V]

W/Lp = 2
1.0

W/Lp = 0.5 W/Lp = 1

0.5

W/Lp = 0.25
0.0
0.0 0.5 1.0 1.5 2.0 2.5
Vin [V]

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© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
Improved Loads
VDD

M1 M1 >> M2
Enable M2

CL
A B C D

Adaptive Load
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© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
Improved Loads (2) PDN are mutually
exclusive

VDD VDD Logic function and its

inverse are both
implemented
M1 M2 Assume Out and Out_bar a
initially high and low

Out Out Now making PDN1 conduc

A Fight between PDN1 and M

A PDN1 PDN2
B Out_bar is high-impedance
B

PDN1 musst be stronger th

VSS VSS M1

Differential Cascode Voltage Switch Logic (DCVSL)

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© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
 DCVSL Transient Response
NAND-AND Gate

2.5

AB

V ol ta ge[V]
1.5
AB
A,B
0.5 A,B

-0.50 0.2 0.4 0.6 0.8 1.0

Implement 0 in out branch Time [ns]
Implement dual in out_bar branch
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© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
 Pass-Transistor
Logic

10
© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
Pass-Transistor Logic

Switch Out A
Out
Inputs

Network B
B

• N transistors
• No static consumption
Re-generation is tricky!!!
11
© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
 Example: AND Gate
B

A
B
F = AB

12
© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
 13
© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
 NMOS-Only Logic

3.0
In
In
1.5 m/0.25 m Out
2.0

Voltage [V]
VD D x x
Out
0.5  m/0.25 m
0.5 m/0.25 m 1.0

0.0
0 0.5 1 1.5 2
Time [ns]

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© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
NMOS-only Switch

C = 2.5V C = 2.5 V
M2
A = 2.5 V A = 2.5 V B
Mn
B
CL M1

VB does not pull up to 2.5V, but 2.5V - VTN

Threshold voltage loss causes
static power consumption
NMOS has higher threshold than PMOS (body effect)
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© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
NMOS Only Logic:
Level Restoring Transistor (SOLUTION #1)
VDD
VDD
Level Restorer
Mr
B
M2
X
A Mn Out
M1

• Advantage: Full Swing

• Restorer adds capacitance, takes away pull down current at X
• Ratio problem 16
© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
Solution 2: Single Transistor Pass Gate with VT=0

VDD

VDD
0V 2.5V

VDD 0V Out

2.5V

WATCH OUT FOR LEAKAGE CURRENTS

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© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
Complementary Pass Transistor Logic

A
Pass-Transistor
A F
B Network
B
(a)
A Inverse
A Pass-Transistor F
B
B Network

B B B B B B

A A A

B F=AB B F=A+B A F=AÝ

A A A
(b)

B F=AB B F=A+B A F=AÝ

AND/NAND OR/NOR EXOR/NEXOR

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© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
Solution 3: Transmission Gate
C
C

A B A B

C
C

C = 2.5 V
A = 2.5 V
B
CL
C=0V

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© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
Resistance of Transmission Gate

30

2.5 V
Rn Rn
Rp
Resistance, ohms

20
2.5 V Vou t

Rp
0V
10
Rn || Rp

0
0.0 1.0 2.0
Vou t , V

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© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
Pass-Transistor Based Multiplexer

S S
VDD

VDD
S

A
M2

S F

M1
B

GND
In1 S S In2
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© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
 QUIZ
Design a 2:1 multiplexer whose propagation delay is
0.69nsec.

You have NMOS(s) whose RN=1k

PMOS(s) whose Rp=2k

CL=1pF

You have inverters whose delay is 0.1nsec.

Output of the mux must be regenerative.

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© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
Delay in Transmission Gate Networks
2.5 2.5 2.5 2.5
V1 Vi-1 Vi Vi+1 Vn-1 Vn
In

C C C C C
0 0 0 0

(a)

Req Req Req Req

V1 Vi Vi+1 Vn-1 Vn
In

C C C C C

(b)
m

Req Req Req Req Req Req

In
C CC C C CC C

(c)

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© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
 Dynamic Logic

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© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
 Dynamic CMOS
 In static circuits at every point in time (except
when switching) the output is connected to
either GND or VDD via a low resistance path.
 fan-in of n requires 2n (n N-type + n P-type) devices

 Dynamic circuits rely on the temporary storage

of signal values on the capacitance of high
impedance nodes.
 requires on n + 2 (n+1 N-type + 1 P-type) transistors

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© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
 Dynamic Gate
off
Clk Mp Clk Mp on
1
Out Out
In1 CL ((AB)+C)
A
In2 PDN
C
In3
B
Clk Me
off
Clk Me on

Two phase operation

Precharge (Clk = 0)
Evaluate (Clk = 1)
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© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
 Conditions on Output
 Once the output of a dynamic gate is
discharged, it cannot be charged again until
the next precharge operation.
 Inputs to the gate can make at most one
transition during evaluation.

 Output can be in the high impedance state

during and after evaluation (PDN off), state is
stored on CL

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© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
 Properties of Dynamic Gates
 Logic function is implemented by the PDN only
 number of transistors is N + 2 (versus 2N for static complementary
CMOS)
 Full swing outputs (VOL = GND and VOH = VDD)
 Non-ratioed - sizing of the devices does not affect
the logic levels
 Faster switching speeds
 reduced load capacitance due to lower input capacitance (Cin)
 reduced load capacitance due to smaller output loading (Cout)
 no Isc, so all the current provided by PDN goes into discharging C L

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© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
 Properties of Dynamic Gates
 Overall power dissipation usually higher than static
CMOS
 no static current path ever exists between VDD and GND
(including Psc)
 no glitching
 higher transition probabilities
 extra load on Clk
 PDN starts to work as soon as the input signals
exceed VTn, so VM, VIH and VIL equal to VTn
 low noise margin (NML)
 Needs a precharge/evaluate clock 30
© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
 Issues in Dynamic Design 1: Charge
Leakage
CLK
Clk Mp
Out

A CL

VOut Evaluate
Clk Me
Precharge

Leakage sources

Dominant component is subthreshold current

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© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
 Solution to Charge Leakage
Keeper

Clk Mp Mkp

A Out
CL
B

Clk Me

Same approach as level restorer for pass-transistor logic

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© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
 Issues in Dynamic Design 2: Charge
Sharing

Charge stored originally on

Clk Mp CL is redistributed (shared)
Out
over CL and CA leading to
A CL reduced robustness
B=0 CA

Clk Me CB

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© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
 Issues in Dynamic Design 4: Clock
Feedthrough

Coupling between Out and

Clk Mp Clk input of the precharge
Out device due to the gate to
A CL drain capacitance. So
voltage of Out can rise
B
above VDD. The fast rising
Clk Me (and falling edges) of the
clock couple to Out.

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© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
 Clock Feedthrough
Clock feedthrough
Clk
Out 2.5
In1
In2 Voltage 1.5

In3 In &
0.5 Clk
In4 Out
Clk -0.5
0 0.5 Time, ns 1

Clock feedthrough

35
© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
 Other Effects
 Capacitive coupling
 Substrate coupling
 Minority charge injection
 Supply noise (ground bounce)

36
© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits
 QUIZ
Find tpHL in two cases,
critical path
C1=C2=CL=10fF,
RN=1k,

In3 1 M3 CL 1.in3 and in2 have

arrived earlier and in1
In2 1 M2 C2 charged arrives late i.e. 200ps
In1 M1 C1 charged after in3 and in2
01
2.In1 and in2 have
arrived, in3 arrives 200ps
later.
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© Digital
EE141 Integrated Circuits 2nd
Combinational Circuits