SCAPS-1D

Solar Cell Capacitance Simulator

 SCAPS features
• Layer Flexibility: Supports up to 7 semiconductor layers. • Generation: Calculates generation sources.

• Recombination: Models different recombination mechanisms. • Illumination: Supports various illumination spectra.
band-to-band, Auger, and SRH-type.
• Point of View: Considers light direction and attenuation.
• Defects: Considers defects in bulk or at interfaces with charge and
• Operating Parameters: Defines voltage, frequency, and
recombination.
temperature.
• Defect Types: Handles various defect types.
• Calculations: Computes key solar cell characteristics.
• Energetic Distributions: Supports different energy distribution
• Batch Processing: Allows multiple calculations at once.
types for defects.
• Settings Management: Saves and loads configurations.
• Optical Excitation: Allows light-induced defect excitation.
• Scripting: Enables automation and customization via scripts.
• Metastable Transitions: Models transitions between defects.
• Curve Fitting: Includes a built-in curve fitting tool.
• Contacts: Considers contact properties.

• Tunneling: Includes electron tunneling effects.

 Basic actions

1. Run SCAPS: Launch SCAPS.

2. Define Problem: Set geometry and
materials.
3. Define working point: Specify
Conditions.
4. Choose Measurement: Select
simulation.
5. Begin Calculation: Start
computation.
6. Display Curves: Show results.
2. Define the Problem:
1. Open SCAPS: Start the program.
2. Set Problem: Click the "Set Problem" button.
3. Choose Load: Select "Load" in the panel that appears.
4. Select Example File: Pick "NUMOS CIGS baseline.def" as an
example problem file from the /scaps/def directory (where SCAPS is
installed).
5. Adjust Properties: Later, modify cell properties using "Set Problem"
in the action panel.
3. Define Working Point:

• Temperature (T): Must be specified for all measurements.

• Voltage (V): Discarded in I-V and C-V simulations, used as dc-bias
voltage in C-f and QE(λ) simulations.
• Frequency (f): Not used in I-V, QE(λ), and C-f simulations, relevant
for C-V simulations.
• Illumination: Used in all measurements, defines bias light conditions;
default is one sun with 'air mass 1.5, global' spectrum, customizable
with various options.
4. Select Measurements:
• Select Measurements: Choose I-V, C-V, C-f, or QE(λ) in the Action
Panel.
• Adjust Parameters: Modify start, end values, and step count.
• Start with One: Begin with one simulation at a time.
• C-V Note: In C-V simulation, I-V curve is calculated automatically.
5. Start the calculation(s):
• Initiate Calculation: Click "Calculate: Single Shot" in the Action Panel.
• Energy Bands Panel: This opens, and calculations start.
• Status Line: At the bottom of the panel, you'll see a status line showing
progress, like "iv from 0.000 to 0.800 Volt: V = 0.550 Volt."
• Visualization: SCAPS provides a visual representation of energy bands
and levels evolving during the simulation.
• Divergence Message: If you see a divergence message, don't worry too
much; you haven't lost previously calculated I-V points.
6. Display the simulated curves:
1. View results after calculations.
2. Explore band diagrams and more.
3. Print, save, or display data.
4. Access specialized output panels.
Solar cell definition
Layer properties panel
Parameter Definition Importance
Measurement of material extent in one
Thickness (nm) direction. Vital for solar cell efficiency optimization.
Energy gap between valence and
Band Gap(eV) conduction bands. Determines absorbed solar spectrum range.
Measure of material's electrical energy Influences capacitor capacitance and
Dielectric Permittivity (ε) storage ability. charge storage.
Density of available electronic states in Crucial in graded composition of cell
CB Effective Density of State(cm-3) CB. layers.
Density of available electronic states in Important for semiconductor material
VB Effective Density of State(cm-3) VB. properties.
Average velocity of electrons due to Impacts electron movement and
Electron Thermal Velocity(cm s-1) thermal energy. conductivity.
Average velocity of electron holes due to Affects hole movement and semiconductor
Hole Thermal Velocity(cm s-1) thermal energy. behavior.
Measure of electron movement in response
Electron Mobility(cm2 V -1s-1) to electric field. Influences carrier extraction efficiency.
Measure of electron hole movement in
Hole Mobility(cm2 V -1s-1) response to electric field. Affects carrier transport efficiency.
Concentration of atoms/molecules Enhances carrier concentration and
Donor Density(cm-3) providing extra electrons. conductivity.
Concentration of atoms/molecules Regulates hole concentration and overall
Acceptor Density(cm-3) accepting electrons. behavior.
Minimum energy to remove an electron
Work Function (eV) from material's surface. Indicates material's electron affinity.
Defect properties panel
Interface and Defect
I-V curves
,.
Speeding up: Batch calculations

Speeding up: Recorder

 Main file-types with their default extension
and directory
SCAPS filetypes Default extension Default directory
Problem definition .def scaps\def
Material properties .materials scaps\materials
Action list .act scaps\def
Initial workingpoint .Wp2 SCAPS\def
Batch settings .sbf scaps\bdf
Recorder settings .srf scaps\bdf
Scaling .scl scaps\scaling
SCAPS scripts .script scaps\script
All SCAPS setting in one .scaps scaps\def
 File-types of SCAPS input data files
SCAPS Units Default extension Default directory
filetypes
Spectrum nm, W/m2 .spe scaps\spectrum
Generation mm, 1/m3.s .gen scaps\generation
Absorption nm, 1/m .abs scaps\absorption
Filter nm, % .ftr scaps\filter
Optical nm, m2 .opt scaps\optcapt
capture cross
section
Grating X in mm, properties in .grd scaps\grading
m-based SI units
THANK YOU