Transistors

P.Madhavi,M.Tech
EEE Department
Bipolar Junction Transistors
A bipolar junction transistor is a three-terminal semiconductor device that consists of two p-n
junctions which are able to amplify or magnify a signal. It is a current controlled device.
The three terminals of the BJT are the base, the collector, and the emitter. A signal of a small
amplitude applied to the base is available in the amplified form at the collector of the transistor.
This is the amplification provided by the BJT. It does require an external source of DC power supply
to carry out the amplification process.
Construction of Bipolar Junction Transistor
Combinations of p-n junctions, or build a BJT i.e. a BJT is made of p and n type semiconductors.
The two junctions divide the three semiconductors of a BJT which are: the base, collector, and
the emitter. The emitter and collector part of transistor are placed on each side of the base.
• Emitter (E) : The outermost layer of a transistor, is commonly known as the emitter, it is
heavily doped with N- type or P-type semiconductor material. P-type material is often
employed to produce the emitter of a PNP transistor, whereas N-type material is mostly
utilized for creating the emitter of a NPN transistor.
• Base (B): The intermediate layer is called the base, it forms a narrow zone between the emitter
and collector and is slightly doped. Its made up of different material than the emitter. A NPN
transistor's base is P-type, while a PNP transistor's base is of N-type.
• Collector (C): The inner layer is called as collector, and it has a modest doping level. The type
of semiconductor used in the designing is the same as that of the emitter. An NPN transistor's
collector is formed from N-type material, whereas a PNP transistor's collector is made of P-
type material.
Cont..
There are two junctions formed in BJT . They are:
• Emitter-Base junction: The Emitter-Base junction of a BJT refers
to the junction that is formed between the emitter and base.
During normal operation , this junction is forward-biased.
• Collector-Base junction : Collector-Base junction is the name
given to the junction that is formed between the emitter and base.
During normal operation , this junction is reverse-biased.
There are three operating regions of a bipolar junction transistor:
 Active region: The region in which the transistors operate as an
amplifier.
 Saturation region: The region in which the transistor is fully on and
operates as a switch such that collector current is equal to the
saturation current.
 Cut-off region: The region in which the transistor is fully off and
collector current is equal to zero.
 Operation of BJT
BJT operates in three regions:
• Active region: The transistor is on in this region. When the collector-base junction
is reverse-biased while the emitter-base junction is in forward-bias, then BJT
works in the active area. As a result, BJT is used as an amplifier. The collector
current is proportional to and controlled by the base current and relatively
insensitive to VCE. In this region the transistor can be an amplifier.
(IC = βIB)
• Saturation region: The saturation region arises when the collector-base junctions
and the emitter-base junction are both forward-biased. The transistor is on. The
collector current varies very little with a change in the base current in the
saturation region. The VCE is small, a few tenths of a volt. The collector current
is strongly dependent on VCE unlike in the active region. It is desirable to operate
transistor switches in or near the saturation region when in their on state.
Ic = I(saturation)
• Cut-off region: Because the emitter and collector junctions are both in the
reversed bias, so the BJT is off in this condition and vary small amount of current
flows from collector to the emitter. There is no current between emitter and the
collector.
(IB = 0 therefore IC = 0)
Construction of Bipolar Junction Transistor
BJT is a semiconductor device that is constructed with 3 doped semiconductor
Regions i.e. Base, Collector & Emitter separated by 2 p-n Junctions.
Bipolar transistors are manufactured in two types, PNP and NPN, and are
available as separate components, usually in large quantities. The prime use or
function of this type of transistor is to amplify current.
This makes them useful as switches or amplifiers. They have a wide application in
electronic devices like mobile phones, televisions, radio transmitters, and
industrial control.
Types of Bipolar Junction Transistor
There are two types of bipolar junction transistors:
PNP bipolar junction transistor
NPN bipolar junction transistor
PNP BJT
 In PNP BJT, the n-type semiconductor is sandwiched between the two p-type semiconductors. The
two p-type semiconductors act as emitter and collector respectively while the n-type
semiconductor acts as a base.
 The current enters the transistor through the emitter such that the emitter-base junction is forward
biased and the collector-base junction is reverse biased.
Cont...
 The two p-type of semiconductors are sandwiched between the n-type semiconductor in a PNP BJT.
The two p-type semiconductors act as the emitter and collector, respectively, and the n-type acts as
the base. In a PNP transistor, current is due to the movement of holes, as opposed to the mobility of
free electrons in an NPN transistor. The collector base junction of a PNP transistor is reverse biased,
whereas the emitter base junction is biased forward. The holes within the emitter area flow into the
base region due to the forward bias at the emitter-base junction. This constitutes the emitter current .

 The holes after reaching the base region, combine with the electrons in the base and constitutes base
current. Most of the holes do not combine with the electrons in the base region as base width is made
extremely small, and holes does not get sufficient electrons for recombination.

 Thus most of the holes diffuse to the collector region and constitutes collector region. There is small
component of collector current due to the thermally generated carriers . This is called reverse
saturation current.
NPN BJT
 In NPN BJT, p-type semiconductor is sandwiched between the two n-type semiconductors. The
two n-type semiconductors act as emitter and collector respectively while the p-type
semiconductor acts as a base.
 Current entering the emitter, base, and collector has the sign convention of positive while the
current that leaves the transistor has the sign convention of negative.
Cont..
 P-type material is sandwiched between the two n-type of semiconductors in NPN type
semiconductor. The two semiconductors of the n type act as the emitter and collector, respectively,
while of p-type acts as the base. The Emitter-base junction is forward bias and collector-base is
reverse bias during the forward active state of NPN transistor. Only if voltage exceeds the barrier
potential, which is 0.3 volts for germanium transistors and 0.7 volts for silicon transistors, is the
emitter-base junction forward biased.
 Due to forward bias on the emitter- base junction the free electrons move towards the base region
in N –type emitter. This constitutes emitter current . Direction of conventional current is opposite
to the flow of electrons. Electrons after reaching the base region tend to combine with the holes. If
these free electron combine with holes in the base, they constitute base current .
 Most of the free electrons do not combine with the holes in the base as base and the width is made
extremely small and electrons do not get sufficient holes for recombination. Thus most of the
electrons will diffuse to the collector region and constitutes collector current . There is another
component of collector current due to the thermal generated carriers. known as reverse saturation
current and is quite small.
Cont...
The transistor is fundamentally a current-controlled device, hence the voltage between its terminals has significant
effect on its behavior.
• Voltage Control: If we talk of input, the BJT is primarily a voltage-controlled device. The base-emitter junction
voltage determines the current flows between the emitter and the collector and the base-emitter junction
voltage determines whether the transistor is "on" or "off" and hence influences the amount of current that may
travel through it.
• Charge Control: The current between the collector and emitter is determined by the movement of charge
carriers, such as electrons or holes, in the base area. Between the collector and emitter, a considerably bigger
current is controlled by a much smaller current at the base. Holes are charge carriers in PNP transistors , whereas
NPN transistors have electrons. The transistor's ability to work as a switch or an amplifier are determined by the
number of charge carriers delivered into the base region.
• Current Flow: The current that flows between the collector and emitter of a BJT is its main output. The voltage
across the base-emitter junction controls base current, which influences the collector current. The transistor's
current gain, or β (beta), explains the relationship between IC, IB, and IE, where ,IC=collector current , IB=base
current , and IE= emitter current (IE). The collector current should, in theory, be equal to β times the base
current, or:
IC = β * IB.
Bipolar Transistor Configurations
There are basically three possible ways to connect BJT in an electric circuit are:
• Common Collector Configuration
• Common Base Configuration
• Common Emitter Configuration.
Common Base Configuration
• The base of transistor is grounded in common base characteristics , with the
emitter acting as the input and the collector as the output. The emitter-base
junction is biased forward, whereas the junction between the collector and the
base is reverse biased. Low voltage gain but high current gain is offered by the CB
arrangement. It is frequently employed in impedance matching. It reverses the
output signal's phase with respect to the input and frequently utilized as a buffer
between circuits with high and low impedance and in high-frequency applications
like RF amplifiers.
Characteristics
Input characteristics- The curve drawn between Output characteristics - The curve drawn between collector current
emitter current and emitter – base voltage for a given and collector – base voltage, for a given value of emitter current is
value of collector – base voltage is known as input known as output characteristics. Output characteristics of CB ΔIE at
characteristics. Input characteristics of CB ΔVCB at constant:Rout =ΔVCB /ΔIB
constant:Rin = ΔVBE/ΔIE
Common Emitter Configuration
Emitter of transistor is grounded in common-emitter characteristics , and the base serves as
input and the collector serves as output. The CE configuration is like the CB
configuration, it has a forward biased BE junction and a reverse biased CB junction. The
voltages of CB and CE configurations are related by:
VCE = VCB + VBE or, VCB = VCE - VBE
and the emitter current in given by : IE = IC + IB
A CE design offers a modest current gain together with a strong voltage gain. It is
frequently employed in voltage amplification. In a Phase Relationship, it Flips the phase
of input signal in relation to the output. Typically used in general-purpose amplification,
audio amplifiers and RF amplifiers .
Characteristics
Input Characteristics - Input characteristics refer to the Output characteristics - The output characteristics for a
curve between base current and base-emitter voltage for a given base current Ib are shown by the curve formed
particular collector-emitter voltage value. between collector current (Ic ) and collector-emitter voltage
(Vce).
Common Collector Configuration
• In the common collector characteristics, the collector of the transistor is grounded,
then the base turns as input and the emitter turns as output. One voltage gain but a
significant current gain is achieved with the CC setup. It serves mostly as a buffer
for current. Phase Relationship: Preserves the identical phase between the signals
received and sent. It include impedance transformation, impedance buffering, and
voltage following to match impedance between circuits.
Common
Collector
Configuration
In the common collector characteristics, the
collector of the transistor is grounded, then
the base turns as input and the emitter turns
as output. One voltage gain but a significant
current gain is achieved with the CC setup. It
serves mostly as a buffer for current. Phase
Relationship: Preserves the identical phase
between the signals received and sent. It
include impedance transformation, impedance
buffering, and voltage following to match
impedance between circuits.
Characteristics
Input Characteristics - To determine the i/p characteristics Output Characteristics - The Curve drawn between
Vce is kept at a suitable fixed value. The base collector emitter current and collector-emitter voltage for a given
voltage Vbc is increased in equal steps and the value of current is known as output characteristics. Output
corresponding increase in Ib is noted. characteristics of CC at constant:
Cont...
Functions of BJT
• Amplification: Junction Bipolar Transistors are crucial for boosting electrical signals in devices
like audio amplifiers because they magnify signals by regulating a greater current flow between
the collector and emitter based on a lesser input current at the base.
• Switching: BJTs function as electronic switches that regulate the current flow between the emitter
and collector. A key element of logic gates and digital circuits, the BJT functions as a switch by
applying a signal to its base, permitting or limiting the flow of current.
• Signal Modulation: BJTs are employed in modulation circuits to change the carrier signals'
properties. These transistors are essential components of information-transmission communication
systems because they may change signal characteristics like amplitude, frequency, or phase by
altering the base current.
Applications of BJT
A BJT is used as an amplifier.
BJT can also function as a switch .
It can be used as an oscillator.
BJT is often used in logic circuits.
It is also used in clipping circuits .
BJT is used as a demodulator and used a detector
Its used in temperature sensors.
Advantages
• Voltage gain is high.
• It includes maximum current density.
• It provides good performance at high frequency.
• It has a high gain bandwidth.
• High-frequency operation.
• Forward voltage drop is low
• It operates in low power or high power applications
Disadvantages
• Less switching frequency.
• Noise production is more.
• Thermal stability is less.
• The time taken for switching is not fast as compared to a high flashing frequency
of voltage and current.