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Tutorial 7

This document is Tutorial 7 for the Photonic Devices and Systems course, focusing on rate equations and semiconductor laser calculations. It includes problems related to threshold current, optical power generation, photon lifetime, and various parameters of InGaAs and InGaAsP lasers. Solutions are provided for each problem, detailing the necessary calculations and given parameters.

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30 views12 pages

Tutorial 7

This document is Tutorial 7 for the Photonic Devices and Systems course, focusing on rate equations and semiconductor laser calculations. It includes problems related to threshold current, optical power generation, photon lifetime, and various parameters of InGaAs and InGaAsP lasers. Solutions are provided for each problem, detailing the necessary calculations and given parameters.

Uploaded by

vs493599
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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Photonic Devices and

Systems
ELECENG 4EM4 – Tutorial 7
Prepared by Raghi El Shamy

1
Tutorial 7
Review Rate Equations

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Tutorial 7

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Tutorial 7

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Tutorial 7
Output Power:

Ith I 5
Tutorial 7 – Problem 1
• A 1300nm InGaAs semiconductor laser has the following parameters: width of the
active region, w=3μm; thickness of the active region, d=0.3μm; length of the active
region, L=500μm; electron lifetime (associated with spontaneous and non-radiative
recombination), τe=1ns; gain cross section, G0=2.5x10-20m2; threshold density,
Ne,th=0.8x1024m-3; internal loss, αint=0.46cm-1; refractive index, n=3.5; reflectivities,
R1=R2=0.65. Under steady state condition, calculate (a) threshold current; (b) the bias
current required to generate an optical power of 100 mW.
Solution

(a)

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Tutorial 7 – Problem 1
Solution
Givens:
(b)
λ=1300nm w=3μm
d=0.3μm L=500μm
αint=0.46cm-1 n=3.5
R1=R2=0.65 P=100 mW.

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Tutorial 7 – Problem 1
Solution
Givens:
(b)
λ=1300nm w=3μm
d=0.3μm L=500μm
αint=0.46cm-1 n=3.5
R1=R2=0.65 P=100 mW

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Tutorial 7 – Problem 2
• A 250μm long InGaAsP laser has an internal loss 40 cm -1, mirror loss 100
cm-1, refractive index n=3.4. Calculate photon lifetime τph. What is the
threshold value of the electron population density, N e,th? Assume that gain
varies as G= G0(Ne-Ne0), with G0=2.64x10-12m2, Ne0=0.5x1024m-3
Solution

From steady state:

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Tutorial 7 – Problem 3
• A semiconductor laser has the following parameters: bandgap, E g=1.24eV;
active region thickness, d=0.5μm; active region width, w=10μm; active
region length, L=200μm; refractive index, n=3.4. The optical power
generated is 100mW. Calculate (a) wavelength of light emitted; (b) optical
intensity; (c) energy density and photon density; (d) number of photons.
Solution
(a)

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Tutorial 7 – Problem 3
Solution
(b)

(c)

(d)
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End of Tutorial 7

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