EEE 1231

ELECTRONIC DEVICES AND CIRCUITS

LECTURE - 10

Prepared by
Ipshita Tasnim Raha
Lecturer
Dept. of Computer Science & Engineering
Varendra University
Contact: [email protected]

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Metal Oxide Semiconductor
Field Effect Transistor
(MOSFET)

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MOSFET

3
MOSFET

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 Types of MOSFET
There are two basic types of MOSFET:

i. Depletion-type MOSFET or D-MOSFET: The D-MOSFET can be operated in both the

depletion mode and the enhancement mode. For this reason, a D-MOSFET is sometimes
called depletion/enhancement MOSFET.

ii. Enhancement-type MOSFET or E-MOSFET: The E-MOSFET can be operated only in

enhancement mode. The manner in which a MOSFET is constructed determines whether it is
DMOSFET or EMOSFET.

• N channel depletion MOSFET is a 3 terminal device similar to N channel enhancement

MOSFET. The only difference between the two is the existence of an N-channel.
• In N-channel depletion MOSFET, N-channel is already present. All other things are the same.

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MOSFET Construction

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D-MOSFET: Basic Construction

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D-MOSFET Symbol

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 D-MOSFET: Basic Operation
Case 1: VGS=0

On applying positive VDS, the electrons in the N channel will

move towards the positive drain terminal, and the drain current
will start flowing from drain to source. On increasing VDS
further, keeping VGS=0, a time will come where ID will become
constant, and that value of drain current is called saturation
current.

Meaning, when VGS = 0 and VDS > 0, current ID flows from

drain to source, and on increasing VDS further,
ID = IS = IDSS, as shown in the figure.

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 D-MOSFET: Basic Operation
Case 2: VGS<0

Apply VGS < 0. Holes from the P-type substrate will attract
towards the negative gate terminal and recombine with electrons
in the N channel, forming electron-hole pairs. On increasing
negative potential at the gate, more electron-hole combinations
will occur, decreasing the number of free electrons in the N
channel. As a result, ID decreases. A time will come when the
drain current will become zero. The negative gate voltage at
which the drain current is zero is called pinch-off voltage or VP.

Meaning, at pinch-off, VGS = VP, VDS > 0, and ID = 0, as

shown in the figure

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D-MOSFET: Basic Operation (Depletion Mode)

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 D-MOSFET: Basic Operation
Case 3: VGS>0

On applying VGS > 0, the minority carriers in the p-type

substrate, i.e. electrons, will get attracted towards the gate
terminal, thereby increasing the concentration of electrons in the
N-channel. As a result, the drain current will increase and
exceed the saturation current.

Meaning, when VGS > 0 and VDS > 0, then ID > IDSS, as
shown in the figure

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D-MOSFET: Basic Operation (Enhancement Mode)

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 n-channel D-MOSFET: V-I Characteristics
As discussed earlier, depletion-type MOSFET worked for both positive and negative gate voltages. Now we
can plot VI characteristics very easily. In the VI characteristics, you will see the plots of VDS vs ID for
various values of VGS.

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p-channel D-MOSFET

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E-MOSFET: Basic Construction

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E-MOSFET Symbol

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E-MOSFET: Basic Operation

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 E-MOSFET: Basic Operation
Case 1: VGS=0

Case 2: VGS>0

To get the drain current first we have to create a channel for the free movement of
electrons. To create a channel we have to apply a voltage between the gate and the
source terminal keeping the Gate at a higher potential. This voltage is called VGS.

Now the gate is at higher potential. The free electrons will move toward the gate
terminal. As discussed earlier we have a Silicon Dioxide layer at the top. Hence
these free electrons will accumulate near the Gate region and will not escape. The
silicon dioxide layer also acts as a dielectric. It will allow more free electrons to
accumulate near the gate terminal in less applied voltage at the gate terminal.

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 E-MOSFET: Basic Operation

Case 3: VGS> VT

Now on increasing VGS further, a high electric field is developed forcing

atoms inside the P substrate to break. The free electrons generated will fill
the holes near the gate region. This way holes are pushed away from the gate
terminal increasing N-type behavior near the gate terminal. A time will come
when an N-channel is created between the two N wells. The VGS voltage at
which the channel is created is called the threshold voltage or VT.

We can conclude from this discussion when VGS > VT an N channel is

induced near the gate terminal as shown in the figure below.

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 E-MOSFET: Basic Operation
Case 4: VGS>VT & VDS>0

A channel is created still we are not getting any current. Now, to get the
drain current,
Apply a voltage source between the drain and the source keeping the drain at
a higher potential. This voltage is called VDS. On applying this voltage
current will start flowing from drain to source. This current is called drain
current or ID.

We can conclude from this discussion, when VGS > VT and VDS > 0, the
current ID flows from drain to source as shown in the figure below.

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 E-MOSFET: pinch-off situation
On increasing VDS further ID will increase. But will this ID keep on
increasing with the increasing value of V DS? The answer to this question
is no.

On increasing the positive voltage at the drain terminal a reverse bias is

formed at the PN junction near the drain terminal. This will result in a
thick depletion region near the PN junction. Hence on increasing VDS
further, you will see the channel near the drain terminal is becoming
narrow. The drain current will face more resistance near the drain
terminal. A situation will reach when the drain current becomes
constant and will not increase further.

This situation is called the pinch-off situation and the drain current is
called the saturation current. The voltage at which we will get
saturation current is called saturation voltage.

We can conclude from this discussion, that

pinch-off is reached when VGS > 0 (constant) and VDS = VDS(SAT),
ID = ID(SAT) as shown in the figure below.

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E-MOSFET: V-I characteristics
From the graph, it is clear that the current ID will become constant at a specific value of VDS. current ID
increases only when the value of VGS is increased.

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D-MOSFETs vs JFETSs

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D-MOSFETs vs JFETSs

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D-MOSFETs vs E-MOSFETs

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