SPICE MODEL of 2SK2563 (Professional+BDP Model) in SPICE PARK
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The document provides a detailed device modeling report for the power MOSFET 2SK2563 by Shindengen, including key parameters for both the MOSFET and its body diode. It features circuit simulation results, comparisons with measurements, and characteristics such as transconductance, switching time, and reverse recovery. All content is subject to copyright by Bee Technologies Inc.
SPICE MODEL of 2SK2563 (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: 2SK2563 MANUFACTURER: Shindengen REMARK: Body Diode (Professional) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 2. POWER MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 3. Body Diode Model Pspice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 4. Transconductance Characteristic Circuit Simulation Result Comparison table VGS(V) ID(A) Error (%) Measurement Simulation 0.200 0.850 0.860 1.176 0.500 1.380 1.360 -1.449 1.000 1.950 1.910 -2.051 2.000 2.700 2.680 -0.741 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 5. Vgs-Id Characteristic Circuit Simulation result 10A 1.0A 100mA 0V 1V 2V 3V 4V 5V 6V 7V 8V 9V I(V2) V_V1 Evaluation circuit V2 0V dc V3 V1 10 Vd c 25 Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 6. Comparison Graph Circuit Simulation Result Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.100 3.400 3.431 0.918 0.200 3.600 3.568 -0.892 0.500 3.850 3.839 -0.291 1.000 4.100 4.145 1.107 2.000 4.600 4.582 -0.391 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 7. Id-Rds(on) Characteristic Circuit Simulation result 2.0A 1.0A 0A 0V 2.5V 5.0V I(V2) V_V3 Evaluation circuit V2 0V dc V3 V1 10 Vd c 25 Vd c 0 Simulation Result ID=2A, VGS=10V Measurement Simulation Error (%) R DS (on) 1.800 1.800 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 8. Gate Charge Characteristic Circuit Simulation result 15V 10V 5V 0V 0 10n 20n 30n V(W1:2) Time*10ms Evaluation circuit V2 0Vdc Dbreak PER = 1000u D1 PW = 600u U19 I2 TF = 10n W1 2SK2563P TR = 10n + 4Adc TD = 0 - I2 = 10m I1 W I1 = 0 IOFF = 10m V1 ION = 0uA 200Vdc 0 Simulation Result VDD=200V Measurement Simulation Error (%) ,ID=4A Qgs 3.000 nC 3.018 nC 0.600 Qgd 7.500 nC 7.556 nC 0.747 Qg 19.000 nC 18.995 nC -0.026 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 9. Capacitance Characteristic (Vds vs. Cbd) Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 2.000 145.000 144.000 -0.690 5.000 100.000 101.400 1.400 10.000 75.000 75.180 0.240 20.000 56.000 55.400 -1.071 50.000 37.000 37.600 1.622 100.000 28.000 27.400 -2.143 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 10. Switching Time Characteristic Circuit Simulation result 12V VDS =153 (V) VGS = 10V 8V 4V 0V 4.96us 5.00us 5.04us 5.08us 5.12us 5.16us 5.20us 5.24us V(2) V(3)/15.3 Time Evaluation circuit 3 V3 L1 0Vdc 30nH R1 L2 RL 2 75 50 30nH V1 = 0 V1 V2 = 20 VDD TD = 5u R2 TR = 6n TF = 6n 50 153 PW = 10u PER = 1000u 0 0 0 0 Simulation Result ID=2A, VDD=153V Measurement Simulation Error(%) VGS=0/10V ton 28.00 ns 28.31 ns 1.11 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 11. Output Characteristic Circuit Simulation result 4.0A 5.0V 2.0A 4.5V 4.0V VGS=3.5V 0A 0V 25V 50V I(V3) V_V2 Evaluation circuit V3 0Vdc V1 V2 10Vdc 25Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 12. Forward Current Characteristic of Reverse Diode Circuit Simulation Result 2.0A 1.0A 0A 0V 1.0V 2.0V I(V2) V_V3 Evaluation Circuit R1 0.0 1m V2 0V dc V3 0V dc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 13. Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.010 0.558 0.561 0.538 0.020 0.586 0.586 -0.004 0.050 0.622 0.620 -0.322 0.100 0.652 0.647 -0.767 0.200 0.678 0.677 -0.086 0.500 0.726 0.729 0.413 1.000 0.784 0.787 0.383 2.000 0.882 0.880 -0.227 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 14. Reverse Recovery Characteristic Circuit Simulation Result 400mA 0A -400mA 8us 10us 12us 14us 16us 18us 20us 22us 24us 26us I(R1) Time Evaluation Circuit R1 50 V1 = {-9.43} V1 V2 = {10.6} TD = 0.576u TR = 10n TF = 10n PW = 15u PER = 100u 0 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj 1.520 us 1.521 us 0.066 trb 0.880 us 0.888 us 0.909 trr 2.400 us 2.409 us 0.375 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 15. Reverse Recovery Characteristic Reference Trj=1.52(us) Trb=0.88(us) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2005