CNTFET
Substitute of MOSFET
Gonugunta Saiphani kumar
M.Tech VLSI 2nd sem 14219008
NIT Jalandhar-144011
1
Introduction
 When further scaling down MOSFET, serious limits in fabrication&
performance
 In particular five different short-channel effects can be distinguished:
1. drain-induced barrier lowering and punchthrough
2. surface scattering
3. velocity saturation
4. impact ionization
5. hot electrons
And also self oscillation of MOSFET due to parasitic capacitances
2
Solutions to overcome
 Modification on existing structures & technologies
 High - K insulating material, metal gate electrode
 Using new materials to replace silicon MOSFETs
3
Carbon nano tubes
4
Role of chirality vector
depending on angle of arrangement along the tube
 If n=m or n-m = 3i then it behaves like a metal
 Otherwise it behaves like a semiconductor
 Diameter SWCNT(~1nm) ; where a0 = 0.142nm
5
CNTFET
 Formed by CNT connecting
two metal electrodes.
 Gate electrode is separated
CNT by thin oxide film.
 There is no scattering in the CNT channell
 The net current is carried by carriers
with energy between μ1 and μ2 that
travel from contact 1 to contact 2.
L = |Ch| = a *
6
Why carbon nanotubes?
 Single walled carbon nanotube is a potential channel material for future
high performance logic circuits.
 High carrier mobility from 3000 to 10000 cm2/v-s
 Excellent electrostatics
 Excellent gate control.
7
8
advantages
 Better control over channel formation
 Better threshold voltage
 Better subthreshold slope
 High electron mobility
 High current density
 High transconductance
 Good stiffness, strength
9
I-V Characteristics10
Implementation of full adder using
10nm CNTFET
11
Results w.r.t MOSFET
12
Drawbacks of CNTFET
 Manufacturing CNTFET-based circuits will differ from current practice with
conventional silicon Technologies so the fault/defect models must be
revisited.
 the defect and failure rate at device and circuit level is expected to be
much higher than with traditional CMOS.
 The carbon nanotube degrades in a few days when exposed to oxygen.
There have been several works done on passivating the nanotubes with
different polymers and increasing their lifetime.
 So many difficulties in mass production, production cost.
 The multi-channeled CNTFETs can keep a stable performance after several
months, while the single-channeled CNTFETs are usually out of work after a
few weeks in the ambient atmosphere.The multi-channeled CNTFETs keep
operating when some channels break down, this won’t happen in the
single-channeled ones.
13
14

Cntfet copy

  • 1.
    CNTFET Substitute of MOSFET GonuguntaSaiphani kumar M.Tech VLSI 2nd sem 14219008 NIT Jalandhar-144011 1
  • 2.
    Introduction  When furtherscaling down MOSFET, serious limits in fabrication& performance  In particular five different short-channel effects can be distinguished: 1. drain-induced barrier lowering and punchthrough 2. surface scattering 3. velocity saturation 4. impact ionization 5. hot electrons And also self oscillation of MOSFET due to parasitic capacitances 2
  • 3.
    Solutions to overcome Modification on existing structures & technologies  High - K insulating material, metal gate electrode  Using new materials to replace silicon MOSFETs 3
  • 4.
  • 5.
    Role of chiralityvector depending on angle of arrangement along the tube  If n=m or n-m = 3i then it behaves like a metal  Otherwise it behaves like a semiconductor  Diameter SWCNT(~1nm) ; where a0 = 0.142nm 5
  • 6.
    CNTFET  Formed byCNT connecting two metal electrodes.  Gate electrode is separated CNT by thin oxide film.  There is no scattering in the CNT channell  The net current is carried by carriers with energy between μ1 and μ2 that travel from contact 1 to contact 2. L = |Ch| = a * 6
  • 7.
    Why carbon nanotubes? Single walled carbon nanotube is a potential channel material for future high performance logic circuits.  High carrier mobility from 3000 to 10000 cm2/v-s  Excellent electrostatics  Excellent gate control. 7
  • 8.
  • 9.
    advantages  Better controlover channel formation  Better threshold voltage  Better subthreshold slope  High electron mobility  High current density  High transconductance  Good stiffness, strength 9
  • 10.
  • 11.
    Implementation of fulladder using 10nm CNTFET 11
  • 12.
  • 13.
    Drawbacks of CNTFET Manufacturing CNTFET-based circuits will differ from current practice with conventional silicon Technologies so the fault/defect models must be revisited.  the defect and failure rate at device and circuit level is expected to be much higher than with traditional CMOS.  The carbon nanotube degrades in a few days when exposed to oxygen. There have been several works done on passivating the nanotubes with different polymers and increasing their lifetime.  So many difficulties in mass production, production cost.  The multi-channeled CNTFETs can keep a stable performance after several months, while the single-channeled CNTFETs are usually out of work after a few weeks in the ambient atmosphere.The multi-channeled CNTFETs keep operating when some channels break down, this won’t happen in the single-channeled ones. 13
  • 14.