FabricationofThin FilmUsing Modified Physical Vapor Deposition (PVD) Module

International Journal of Research in Engineering and Science (IJRES)
ISSN (Online): 2320-9364, ISSN (Print): 2320-9356
www.ijres.org Volume 3 Issue 3 ǁ March. 2015 ǁ PP.17-27
www.ijres.org 17 | Page
FabricationofThin FilmUsing Modified Physical Vapor
Deposition (PVD) Module
Engr. Mohd Khairul Muzhafar Bin Md Nor
Department of Electrical EngineeringPolytechnic Kota Kinabalu
Yasin Bin Yusoff
Department of Electrical Engineering Polytechnic Kota Kinabalu
Abstract
This paper explains the fabrication of thin film using modified Physical Vapor Deposition (PVD) Module.
Physical Vapor Deposition (PVD) is a variety of vacuum deposition and is a general term used to describe any
of a variety of methods to deposit thin films by the condensation of a vaporized form of the material onto various
surfaces. The surface morphology of various such as Titanium Dioxide and Aluminum thin film has been
studied. The Titanium Dioxide and Aluminum thin film has been fabricated on Silicon (Si) substrate using
modified Physical Vapor Deposition (PVD) module system. The process started with the establishment of
process flow, process modules, and process parameters. Two modules were developed. The characteristics prior
to the thin film fabrication namely surface morphology, metal thickness characterization and V-I characteristic
were recorded. The samples were characterized by Optical Microscope, Atomic Force Microscope (AFM),X-ray
diffraction (XRD) and I - V characterization. The result and data were analyzed and applied in the fabrication
of thin film using various materials. The thin film fabrication process used Titanium Dioxide (TiO2) nanopowder
and Aluminum (Al2O3) nanopowder for the coating process. The result for each processes are presented in this
paper.
Keywords:Aluminum Oxide, Titanium Dioxide, OpticalMicroscope, AFM, SEM andXRD.
I. INTRODUCTION
Semiconductor device fabrication is the process used to create chips, the integrated circuits that are present
in everyday electrical and electronic devices. It is a multiple-step sequence of photographic and chemical
processing steps during which electronic circuits are gradually created on a wafer made of pure semiconducting
material. Silicon is the most commonly used semiconductor material today, along with various compound
semiconductors.
Thin films are thin material layers ranging from fractions of a nanometer to several micrometers in
thickness. Electronic semiconductor devices and optical coatings are the main applications benefiting from thin
film construction. Work is being done to fabricate thin films with chemical such as titanium oxide for making a
semiconductor and zinc oxide for application such as gas sensor, piezoelectricity material and many researches
in solar cell.
In particular, the use of such coatings on cutting tools can extend the life of these items by several orders of
magnitude. Research is being done on a new class of thin film inorganic oxide materials, called amorphous
heavy-metal cation multi component oxide, which could be used to make transparent transistors that are
inexpensive, stable, and environmentally benign. Thin-films are applied to surfaces using one of many
techniques of thin-film deposition.
Basically, devices are fabricated on silicon and function as semiconductor because of the unique properties
of this material. There are four main reasons for the selection of silicon as the primary semiconductor material:
i. Abundance of silicon
ii. Higher melting temperature for wider processing range
iii. Wider temperature range of operation
iv. Natural growth of silicon dioxide
Silicon is the second most abundant element on earth and makes up about 25% of the earth’s crust. If
processed properly, silicon can be refined into sample quantities of the very pure form necessary for
semiconductor fabrication which leads to lower costs. Silicon’s melting temperature of 1412°C is much higher
than the melting temperature for germanium which is 937°C. This higher melting temperature permits silicon to
withstand high-temperature processing. Another advantage to using silicon is that a semiconductor device made

Fabrication of Thin Film Using Modified Physical Vapor Deposition (PVD) Module
from silicon can function over a wider temperature range than germanium, which increases the semiconductor’s
application and reliability.
It is found that, a major disadvantage of most ceramic listed above is their high in cost. This factor has led
to a situation of limited use commercially rather for research purpose only. In general, commercial ceramic are
made from starting ceramic powder which will later been shaped to form desired ceramic. The starting powders
are often made by energy – intensity processes or by other expensive methods adapted to produce high purity
starting powders. Higher degree of purity will cause decrease in impurity content which will alter the total
performance of the ceramic. The powders are then used to fabricate thin films on substrate.
In this paper, the Al2O3and TiO2thin film was fabricated on the silicon (Si) substrate. Then, the morphology
of the Al2O3 and TiO2 thin film after evaporationprocess on the surface of the thin film is studied. Thesurface on
the sampleare been characterized by Digital Camera, Optical Microscope (OM), Atomic Force Microscope
(AFM), Scanning Electron Microscope (SEM), Energy Dispersive Spectrometer (EDS),I–Vcharacterization and
X-ray diffraction (XRD). Influence of the evaporation process to the physical and chemical properties of Al2O3
and TiO2 thin film is discussed.
II. METHODOLOGY
Evaporation Process
A. Formation of thin film process
First, aSilicon (Si) substrate wafer is cleaned with the Buffered Oxide-Etch (BOE) is used to remove
organic and inorganic contaminants residue, respectively. It is usually followed byDeionized water (DI). The
substrate was placed in anevaporation chamber which contains mixture of Titanium Dioxide (TiO2)nanopowder
and graphite (CaC6) and mixture of Alumina (Al2O3)nanopowder and graphite (CaC6) as a material source in
tungsten boat. The chamber was pump up to 10-5
Torr using a high vacuum pumping system. It will consist of
45 minutes of waiting. Then, the evaporation process can be started by increasing the voltage of the tungsten
boatabout 10% from its maximum range for 1 minute (tungsten – dark red), then up to 20% about 45 seconds
(tungsten – red) and then to 30% for about 7 minute (tungsten – bright orange). The current range when we
operate the PVD module is 73A until 83A for the maximum power. The colorof the tungsten will change
according to the value of voltage supplied. After 7 minute at 30% of the maximum voltage source, the toggle is
turn back to 0% and let to be cooled for 5 minute before the chamber is opened.
B. Measurement of material
To continuethe experiment, the compound of material must be measured to get a good result. For this
experiment the compound of material were as follows:
C. The experimental parameters
Alumina (Al2O3) Titanium Dioxide (TiO2)
1 spoon of spatula = 50.4 mg 1 spoon of spatula = 96.2 mg

Various times
a). Titanium Dioxide (TiO2)
PARAMETER
1 2 3 4 5
Evaporation
time(minutes)
0 1 5 10 15
Quantity of
material
(1 spatula)
1 1 1 1 1
b). Alumina (Al2O3)
PARAMETER
1 2 3 4 5
Evaporation
time(minutes)
0 1 5 10 15
Quantity of material
(1 spatula)
1 1 1 1 1
D. Thin film evaporation process
Figure 1: Evaporation process using PVD module
TheTiO2 and Al2O3 thin film deposited on Si substrate is now already done. The system is located in
Microelectronic Laboratory of FKEE, UTHM. The substrate was cut into several pieces of sample in order to
provide thefundamental thickness (TiO2 and Al2O3thin film). Every sample is characterized using Digital
Camera, Optical Microscope, Atomic Force Microscope (AFM), Scanning Electron Microscope (SEM), Energy
Dispersive Spectrometer (EDS), I – V characterization and X- ray diffraction (XRD).
Figure 2: After evaporation process using tungsten boat
E. Sol-Gel
The sol-gel process is a wet-chemical technique such as chemical solution deposition widely used recently
in the fields of materials science and electrical engineering. Such methods are used primarily for the fabrication
of materials starting from a chemical solution which acts as the precursor for an integrated network (gel) of
either discrete particles or network polymers. Thus, the sol evolves towards the formation of a gel-like diphasic
system containing both a liquid phase and solid phase whose morphologies range from discrete particles to
continuous polymer networks. Research had done using this method and comparing between this method and
evaporation method. The result of the experiment shown that which one is the better method to fabricated a thin
film.
F. Optical Microscope
The use of optical microscope is to magnify the sample up 30X, before having a rough look on surface of
the sample. The sample is been placed on the tray and by varying the focus point of the lens, the optical image
of each sample are recorded.

G. Atomic Force Microscope (AFM)
Figure 3: Scan surface morphology using XE-100 AFM
The AFM (PARK SYSTEM - XE-100) system is used to measures the sample surface using atomic force
between tip and sample and also to observe the morphology of the TiO2 and Al2O3 thin film after the
evaporation process. The system is located in Microelectronic and Nanotechnology, Shamsuddin
ResearchCentre (MiNT-SRC), UTHM. Sample is placed on the substrate holder and been inserted into the
AFM. In this project, non- contact cantilever had been used. The non - contact cantilever had been choose
because using this cantilever,sample will not damage and can overview the topology, amplitude and phase on
the surface of the sample. After all the surface area of the sample is scan, we can observe the surface
morphology, roughness and thickness on surface topology. All the result of the sample iscaptured.
H. Scanning Electron Microscope (SEM)
The SEM (JEOL JSM – 6380 LA) system is used to observe the surface morphology of the TiO2 and Al2O3
thin film after the evaporation process. The system is located in Makmal Sains Bahan of FKMP, UTHM.
Sample is placed on the substrate holder and been inserted into the SEM chamber before pumping up the
chamber using turbo and rotary pump. The focus of image appear on the online video of the SEM is adjusted
until clear image is produced. The sample images with the magnification of 100X are recorded.
I. Energy Dispersive Spectrometer (EDS)
The SEM is equipped with EDS system that allows the user to analyze the elements exists by marking the
area in square, point or circle. In the present works, the rectangular type is chosen. EDS will verify and
characterized the sample. The characterized result will appear in form of graph. Every sample will undergo 1
times of test at different areas and every result obtained is recorded.
J. X – Ray Diffraction (XRD)
The X- ray diffraction (XRD) is used to detect any elements on the surface material. The result in form of
graph is compared with the pre-loaded library before assumption of material can be made. The data in form of
graph is recorded.
K. I – V Characterization
The I-V characterization can be used to determine the resistivity of the sample in form of voltage versus
current. Every data of the sample is recorded and been analyzed.
III. RESULT AND DISCUSSION
A. Digital Camera
The Digital Camera is a camera used to capture photographs and stores the images digitally via an
electronic image sensor. From the figure 4 below, the image of digital camera shown that there 2 different layer
on sample surface. The clean side is the hiddenpart of the sample when evaporation process.It is because that
part is hidden by the clip that used to holding the sample. Other part of sample shows a TitaniumDioxide or
Alumina single layer. From general perception, it can prove that existence of thin film.
Figure 4: Thin film of the Mixture ofTitanium Dioxideand graphite.

B. Optical microscope test
The Optical Microscope is use to observe the surface area after the evaporation process. The Optical
Microscope is connected with the computer and use IMAPS Version. 4.0 Professional Edition software.Figure 2
shows the Optical Microscope images of the TiO2 and Al2O3 thin film after the evaporation processat various
times.The images clearly show that the surface morphology changed after evaporation process at specific time.
Figure 2(a), 2(b),2(c) and 2(d) show that the images have a different surface morphology. Therefore, it is
interesting to study the evaporation process using the tungsten boat.The image that shows are like below:
Mixture Titanium Dioxide (TiO2) with graphite (CaC6)
(a) 1minute (b) 5minutes
(c) 15 minutes (BF view) (d) 15 minutes (DF view)
Figure 5: The surface morphology of Titanium Dioxide (TiO2) thin film. a) TiO2 thin film after 1 minutes
theevaporation process. b) 5 minutes. c) 15 minutes (BF view). d) 15 minutes (DF view).
Mixture Alumina (Al2O3) with graphite (CaC6)
(a) 1 minute (b) 5minutes
(c) 15 minutes (BF view) (d) 15 minutes (DF view)
Figure 6: The surface morphology of Alumina (Al2O3) thin film. a) Al2O3thin film after 1 minutes
theevaporation process. b) 5 minutes. c) 15 minutes (BF view). d) 15 minutes (DF view).

Comparison Sol-Gel and Evaporation Process
Sol- Gel
a). TiO2 and CH3OH b). TiO2 and C2H5OH
Evaporation Process
c). TiO2 and CaC6
Sol- Gel
a). Al2O3 and CH3OH b). Al2O3 and C2H5OH
Evaporation Process
c). Al2O3 and CaC6
Keywords– Titanium Dioxide (TiO2), Methanol (CH3OH)Alumina (Al2O3), Ethanol (C2H5OH), Graphite
(CaC6)
a. Scanning Electron Microscope Test
Figures4a and 4b shows the scanning electron microscope images of the TiO2 and Al2O3thin film before
and after the evaporation processes. From theimages, the evolution of the sample was nearly the same with the
optical microscope images. The growth of the rough image of the sample was observed clearly with the sample
15minutes.
Figure 7a: Surface morphology of TiO2 thin film after theevaporation process.

Figure 7b: Surface morphology of Al2O3 thin film after theevaporation process.
b. Atomic Force Microscope Test
By using the AFM, we determine the surface morphology in a particular region of thin film. The XEI
software with the help of AFM unit is used for this analysis. For example, the topography on the surface ofthin
film is been analyzed and shown in the Figures8 and 9. Figure 5a shows that the element of TiO2and graphite
were observed on the topography of thin film.
Figure 8a: 3D-image of surface morphology of TiO2 thin film after theevaporation process using AFM.
Figure 8b: Thickness of TiO2 thin film after the evaporation process using AFM. The cursor pair has shown the
change of X-axis of the surface selected.
Figure 8c: Roughness of TiO2 thin film after the evaporation process using AFM. The cursor pair has shown the
change of Y-axis at the surface selected
Figure 9a: 3D-image of surface morphology of Al2O3 thin film after the evaporation process using AFM.

Figure 9b: Thickness of Al2O3 thin film after the evaporation process using AFM. The cursorpair has shown the
change of X-axis of the surface selected.
Figure 9c: Roughness of Al2O3 thin film after the evaporation process using AFM. The cursor pair has shown
the change of Y-axis at the surface selected
C. Energy Dispersive Spectrometer Test
By using the EDS, we determine the composition of element in a particular region of thin film. The
software Analysis Station with the help of SEM unit is used for this analysis. For example, the area from the
sample TiO2 and Al2O3 for 15 minutes are been analyzed and shown in the Figures7 and 8. Figure 8 shows that
the element of oxygen and titaniumdioxide were observed on the surface of thin film.
a)
Figure 10a): The area selected of sample 15 minutes is analysis using EDS. The resultant analysis (graph) is
shown in figure 10b).
b)
c)
Figure 10c: The resultant result of sample 15 minutes at area 003 is shown. b) The resultant graph with label of
related element. c) The resultant element analysis in form of percentage is shown.

a)
Figure 11a): The area selected of sample 15 minutes is analysis using EDS. The resultant analysis (graph) is
shown in figure 11b).
b)
c)
Figure 11c: The resultant result of sample 15 minutes at area 003 is shown. b) The resultant graph with label of
related element. c) The resultant element analysis in form of percentage is shown.
a. X – Ray DiffractionTest
The elements compose in the TiO2 thin film after the evaporation process was also evaluated using XRD
analyses. The result is shown in Fig. 6. The peak position is consists of TiO2 composition.
Figure 12:XRD analyses of TiO2 thin film after the evaporation process.
Figure 12shows that the peak of TiO2. The result wasconsistent with the scanning electron and microscope
atomic force microscope images shown in Figs. 4 and 5.
b. I – V Characterization test
Finally, the I-V characteristic of each samples were evaluated used four point probe. From the I-V
characteristic, the resistivity of the TiO2 and Al3O2 thin film after the evaporation processes at various times
were calculated.One important indirect measure of coating technique is the sheet resistivity. Sheet resistivity (ρ)
is a quantity which combines all the material resitivity with some (but not all) of the geometrical factors and has
unit Ω/(ohms persquare).The formula of sheet resistivity and bulk resistivity is shown below:-
Sheet resistivity, 𝜌 =
𝜋
ln 2
×
𝑉
𝐼
(1)

= 4.523 





I
V
The results were summarized in Table 2.
Table 1: Sheet resistivity calculated from the I-V characteristic of TiO2thin film samples.
Sample
TiO2
Voltage
(V)
Current
(A)
Gradien
t (V/ I)
Sheet resistivity
(Ω∕□)
TiO2 26.4 6.408 e-10
4.11 e10
1.86 e11
Al2O3 26.4 9.55 e-10
2.76 e10
1.25 e11
Silicon
Wafer
26.4 1.295 e-9
2.05 e10
9.27 e10
Figure 13: I-V Characteristic
Using four point probes, the I-V Characteristic of different material is showing in figure 1. From this graph,
the wafer with no evaporation process is above and then followed by the evaporation of Al2O3 and Ti02.
This I-V characteristic graph show that 3 lines which represents the substances used to fabricated a thin
film. The substances that had been used are such as Alumina, Titanium Dioxide and Silicon that does not
contain any types of material. From the graph, show that Alumina have the high current flow rate compare to
Titanium Dioxide Silicon. Refer to the graph, a table for the calculation of sheet resistivity and axial gradient
graph has been build.
Table 2: Sheet resistivity at various time
Time (minutes) Resistance, R = (V/I) Sheet resistivity, ρ = Ω/□⁪
0 4.58x1010
2.07x1011
1 4.16x1010
1.88x1011
5 3.55x1010
1.61x1011
From the table above, it is shown that when the time is increase, the resistance is decrease that means the
sheet resistivity also decrease. When the sheet resistivity is decrease, the conductivity is increase.
Table 1show that the sheet resistivity of TiO2 and Al2O3 thin film. The sheet resistivity of the TiO2 and
Al2O3 thin film evaporate for 15 minutes shows that the value is becoming closer to the sheet resistivity of the Si
wafer before the evaporation of TiO2 and Al2O3. This may be due the deposition of TiO2 and Al2O3thin film
during the evaporation process.
IV. CONCLUSION
After the experiment, we can conclude that the TiO2 and Al3O2thin filmwhich was evaporate in the
modified physical vapor deposition module system shows that there is a component of TiO2 and Al2O3exist on
the surface of the thin film. This was proven from the Optical Microscope, SEM, XRD, EDS andAFM results.
The surface morphology of TiO2 and Al2O3 thin film was changed when the material added and mixture with
CaC6 in the evaporation process. The thin film also shows that, when the mixture of TiO2 nanopowder and
mixture of Al2O3nanopowder added the thickness of the thin film layer also increased.
0
2E-10
4E-10
6E-10
8E-10
1E-09
1.2E-09
1.4E-09
1.6E-09
1.8E-09
0 5 10 15 20 25 30
current (A)
voltage (V)
IV CHARACTERISTIC
Alumina
Titanium
Dioxide
Silicon
Wafer

V. SUGGESTION
The research on the particular method can be expand for further analysis using several other advance
equipment such as Atomic Force Microscope (AFM) and Field Emission Scanning Electron Microscope (FE –
SEM) to understand the phenomena happened in atomic scale. Also, it is suggested to havefabricated
moresamplesusing other material such as zinc oxide and etc and to be tested using a more efficient equipment to
understand better the reaction of thin film towards evaporation effect.
VI. ACKNOWLEDGMENT
We would like to thank Universiti Tun Hussein Onn Malaysia for supporting this research by providing
material, equipment and source of reference to accomplish this research.
REFERENCES
[1] W. Scot Ruska, Walter E.W. (1988), “MicroelectronicProcessing”. International edition. McGraw-Hill, Inc.
[2] Peter Van Zant(2004), “Microchip Fabrication”. Fifth Edition.McGraw-Hill Companies, Inc.Sami Franssila, “Introduction To
Micro Fabrication ”. John Wiley & Sons, Inc.
[3] The standard periodic table, Online, http://en.wikipedia.org/wiki/Periodic_table.
[4] Micheal Quirk, Julian Serda, Prentice Hall, “SemiconductorManufacturing Technology”.
[5] Seung – Ki Joo, Tae – Kyung Kim: “Method of Fabricating Thin Film Transistor”, US patent 6511871,
[6] Laboratory Instruction Sheet – Faculty of Electrical andElectronic engineering, University Tun ussein Onn Malaysia,“Integrated
circuit (IC) Fabrication”.
[7] Marc Madou, “Fundamental of Microfabrication”.
[9] Riyaz Ahmad Mohamed Ali(2009), “Investigation on the Thermal Effect of Al Thin Film in the Present of Nitrogen (N2) Gas”,
Universiti Tun Hussein Onn Malaysia.
[10] Donald Cristiansen, Fourth edition, “Electronics Engineers Handbook”.

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