Giant Magneto Resistance
GMR
The Nobel Prize in Physics 2007The Nobel Prize in Physics 2007
Peter Grünberg
“GMR can be considered one of the first real applications of the
promising field of nanotechnology ”
- Nobel committe
Albert Fert
Evolving Technology
Magnetic Forces
 Mathematically,
FB = qv x B
|FB| = |qv| |B| sin θ
( θ is angle between v and B)
direction given by right-hand rule
Magnetic field pointing into
page (screen)
Current-Carrying Wire
Direction of velocity v of
electrons
Direction of force on
conduction electrons
Magnetoresistance - MR
 Electrons - moving charges
 Effect of external magnetic field perpendicular
to the flow
 Force due to field pushes electrons off track
Concept Behind GMR
• GMR is a completely different effect from
Magnetoresistance (MR)
• MR is the regular “Lorenz” force on charges
moving in a magnetic field
• GMR exploits spin-dependent scattering
Spins and Scattering
 An electron moving into a magnetized region
will exhibit spin-dependent scattering
 Scattering depends on direction of spin
GMR is due to intrinsic rotation of the electron
that induces a magnetic moment – the
quantum mechanical property called spin
Resistance and magnetization
The straighter the path of the electrons, the greater the
conductance of the material.
Electric resistance is due to electrons diverging from their
straight path when they scatter on irregularities and
impurities in the material.
Electron and its spin
•Two types of spin, spin up and spin down
•Spin up exhibited by majority of electrons in ferromagnetic
materials
•Spin down exhibited by small amount of electrons
•Spin up ultimately results in reduction in resistance, while spin
down increases the resistance
•Under the influence of external magnetic field most of the
electrons will be showing spin up so that R reduces
Deep into GMR
GMR Material
No External Magenetic field
Resistance High
External Magenetic field present
Resistance low
Variation of resistance
TMR from GMR
The tunnelling process dependent on the available
electron states in the ferromagnetic materials
Ni–SiO2films
Fe/MgO/Fe
Merits
• Dramatic Decrease in Price per GB of storage
Decrease in size
Limitations
GMR applications are limited to
certain specific applications
GMR in HDD Technology
GMR Based biosensor
Other Applications
Magnetoresistive-Based Biosensors
Outcomes of GMR
• Discovery of GMR opened the door to a new
field of science, magnetoelectronics (or
spintronics)
• CMR - Colossal MagnetoResistance,
thousand-fold magnetoresistance in La–Ca–
Mn–O
• Magnetoelectronics & Nanotechnology.
SummarySummary
• GMR effects was discovered by A. FertA. Fert and P.P.
GrünbergGrünberg independently.
• GMR shows large magnetoresistance.
– GMR ~50 % > MR ~ a few %
• The greatest contribution of GMR is the sensitive
reading head for HDD.
References
• J.A. Katine, F.J. Albert, and R.A. Buhrman,
“Current-Driven Magnetization Reversal and
Spin-Wave Excitations in Co/Cu/Co Pillars”
• www.isoloop.com
• www.ieee.org
• https://buffy.eecs.berkeley.edu/PHP/resabs
THANK YOU
Presented by
Prashob P K

Gmr

  • 1.
  • 2.
    The Nobel Prizein Physics 2007The Nobel Prize in Physics 2007 Peter Grünberg “GMR can be considered one of the first real applications of the promising field of nanotechnology ” - Nobel committe Albert Fert
  • 3.
  • 4.
    Magnetic Forces  Mathematically, FB= qv x B |FB| = |qv| |B| sin θ ( θ is angle between v and B) direction given by right-hand rule
  • 5.
    Magnetic field pointinginto page (screen) Current-Carrying Wire Direction of velocity v of electrons Direction of force on conduction electrons
  • 6.
    Magnetoresistance - MR Electrons - moving charges  Effect of external magnetic field perpendicular to the flow  Force due to field pushes electrons off track
  • 7.
    Concept Behind GMR •GMR is a completely different effect from Magnetoresistance (MR) • MR is the regular “Lorenz” force on charges moving in a magnetic field • GMR exploits spin-dependent scattering
  • 8.
    Spins and Scattering An electron moving into a magnetized region will exhibit spin-dependent scattering  Scattering depends on direction of spin GMR is due to intrinsic rotation of the electron that induces a magnetic moment – the quantum mechanical property called spin
  • 9.
    Resistance and magnetization Thestraighter the path of the electrons, the greater the conductance of the material. Electric resistance is due to electrons diverging from their straight path when they scatter on irregularities and impurities in the material.
  • 10.
    Electron and itsspin •Two types of spin, spin up and spin down •Spin up exhibited by majority of electrons in ferromagnetic materials •Spin down exhibited by small amount of electrons •Spin up ultimately results in reduction in resistance, while spin down increases the resistance •Under the influence of external magnetic field most of the electrons will be showing spin up so that R reduces
  • 11.
  • 12.
    GMR Material No ExternalMagenetic field Resistance High External Magenetic field present Resistance low
  • 13.
  • 14.
    TMR from GMR Thetunnelling process dependent on the available electron states in the ferromagnetic materials Ni–SiO2films Fe/MgO/Fe
  • 15.
    Merits • Dramatic Decreasein Price per GB of storage
  • 16.
  • 17.
    Limitations GMR applications arelimited to certain specific applications
  • 18.
    GMR in HDDTechnology
  • 19.
  • 21.
  • 22.
    Outcomes of GMR •Discovery of GMR opened the door to a new field of science, magnetoelectronics (or spintronics) • CMR - Colossal MagnetoResistance, thousand-fold magnetoresistance in La–Ca– Mn–O • Magnetoelectronics & Nanotechnology.
  • 23.
    SummarySummary • GMR effectswas discovered by A. FertA. Fert and P.P. GrünbergGrünberg independently. • GMR shows large magnetoresistance. – GMR ~50 % > MR ~ a few % • The greatest contribution of GMR is the sensitive reading head for HDD.
  • 24.
    References • J.A. Katine,F.J. Albert, and R.A. Buhrman, “Current-Driven Magnetization Reversal and Spin-Wave Excitations in Co/Cu/Co Pillars” • www.isoloop.com • www.ieee.org • https://buffy.eecs.berkeley.edu/PHP/resabs
  • 25.