SPICE MODEL of IRFB9N65A (Professional+BDS Model) in SPICE PARK
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This document summarizes the modeling and simulation of an IRFB9N65A power MOSFET manufactured by International Rectifier. It includes: 1) Details of the MOSFET components and manufacturer. 2) Descriptions and parameters of the PSpice models used to simulate the MOSFET's electrical characteristics. 3) Results of simulations validating the MOSFET's transconductance, capacitance, switching time and other characteristics against manufacturer measurements. 4) Circuit diagrams of the evaluation setups used in the simulations.
SPICE MODEL of IRFB9N65A (Professional+BDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: IRFB9N65A MANUFACTURER: International Rectifier REMARK: Body Diode (Standard) Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 2. POWER MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 3. Body Diode Model Pspice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 4. Transconductance Characteristic Circuit Simulation Result Comparison table gfs (S) ID(A) Error (%) Measurement Simulation 1.00 3.00 3.13 4.17 2.00 4.44 4.41 -0.79 5.00 6.67 6.79 1.90 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 5. Vgs-Id Characteristic Circuit Simulation result 10A 1.0A 500mA 4.0V 5.0V 6.0V 7.0V I(V2) V_V1 Evaluation circuit V2 0V dc V3 V1 10 0V dc 10 Vd c 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 6. Comparison Graph Circuit Simulation Result Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.50 4.78 4.77 -0.29 1.00 4.98 4.95 -0.51 2.00 5.22 5.22 0.07 5.00 5.72 5.77 0.93 10.00 6.28 6.40 1.91 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 7. Id-Rds(on) Characteristic Circuit Simulation result 10A 1.0A 100mA 100mV 1.0V 10V 100V I(V2) V_V3 Evaluation circuit V2 0Vdc V3 100Vdc V1 10Vdc 0 Simulation Result ID=5.0, VGS=10V Measurement Simulation Error (%) R DS (on) 0.70 0.70 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 8. Gate Charge Characteristic Circuit Simulation result 20V 16V 12V 8V 4V 0V 0 10n 20n 30n 40n 50n V(W1:3) Time*10ms Evaluation circuit V2 0Vdc Dbreak PER = 1000u D1 PW = 600u I2 TF = 10n W1 TR = 10n + 5.2Adc TD = 0 I2 = 10m - I1 W I1 = 0 IOFF = 1mA V1 ION = 0uA 325Vdc 0 Simulation Result VDD=325V,ID=5.2A Measurement Simulation Error (%) Qgs 8.000 nC 8.022 nC 0.275 Qgd 12.000 nC 11.978 nC -0.183 Qgd 32.000 nC 32.033 nC 0.103 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 9. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 10.00 325.00 321.00 -1.23 20.00 220.00 216.00 -1.82 50.00 127.00 127.50 0.39 100.00 87.00 85.00 -2.30 200.00 60.00 57.50 -4.17 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 10. Switching Time Characteristic Circuit Simulation result 12V VDS =325 (V) VGS = 10V 8V 4V 0V 5.00us 5.05us 5.10us 5.15us V(2) V(3)/32.5 Time Evaluation circuit L1 RL 3 V3 0.05uH 62 0Vdc VDD 325 L2 RG 2 0.03uH V1 = 0 V1 9.1 V2 = 10 0 TD = 5u TR = 6n TF = 7n PW = 5u PER = 100u 0 0 Simulation Result ID=5.2A, VDD=325V Measurement Simulation Error(%) VGS=0/10V td (on) 14.000 ns 14.016 ns 0.114 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 11. Output Characteristic Circuit Simulation result 10A 10.0V 7.0V 6.0V 5.5V 1.0A VGS=5.0V 100mA 100mV 1.0V 10V 100V I(V2) V_V3 Evaluation circuit V2 0V dc V3 10 0V dc V1 10 Vd c 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 12. Forward Current Characteristic of Reverse Diode Circuit Simulation Result 20A 10A 1.0A 100mA 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V I(V2) V_V3 Evaluation Circuit R1 0.0 1m V2 0V dc V3 0V dc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 13. Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.100 0.620 0.620 0.079 0.200 0.644 0.644 -0.073 0.500 0.676 0.677 0.133 1.000 0.708 0.706 -0.253 2.000 0.746 0.743 -0.397 5.000 0.812 0.817 0.589 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 14. Reverse Recovery Characteristic Circuit Simulation Result 400mA 0A -400mA 12us 14us 16us 18us 20us 22us I(R1) Time Evaluation Circuit R1 50 V1 = {-9.4} V1 V2 = {10.7} TD = 1.275u TR = 10n TF = 10n PW = 15u PER = 100u 0 0 Compare Measurement vs. Simulation Measurement Simulation Error(%) Trj 1.040 us 1.042 us 0.144 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 15. Reverse Recovery Characteristic Reference Measurement trj = 1.04(us) trb = 1.10(us) Conditions: Ifwd=Irev=0.2(A), Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2005