TLP250
1 2019-06-17© 2019
Toshiba Electronic Devices & Storage Corporation
TOSHIBA Photocoupler IRED & Photo-IC
TLP250
Industrial Inverter
Inverter For Air Conditioner
IGBT Gate Drive
Power MOS FET Gate Drive
The TOSHIBA TLP250 consists of an infrared emitting diode and a integrated
photodetector.
This unit is 8-lead DIP package.
TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.
• Input threshold current: 5mA(max)
• Supply current : 11mA(max)
• Supply voltage : 10-35V
• Output current : ±1.5A (max)
• Switching time tpLH/tpHL): 0.5μs(max)
• Isolation voltage: 2500Vrms(min)
• UL-recognized: UL 1577, File No.E67349
• cUL-recognized: CSA Component Acceptance Service No.5A
File No.E67349
• VDE-Approved: EN 60747-5- 5 (Note 1)
Note 1: When a VDE approved type is needed,
please designate the Option(D4).
Truth Table
Tr1 Tr2
Input
LED
On On Off
Off Off On
Unit: mm
TOSHIBA 11-10C4S
Weight: 0.54 g (typ.)
Pin Configuration (top view)
8
7
6
5
1 : N.C.
2 : Anode
3 : Cathode
4 : N.C.
1
2
3
4
5 : GND
6 : VO (Output)
7 : VO
8 : VCC
Schmatic
2+
VF
IF
3-
ICC
(Tr 1)
VO
GND
(Tr 2)
IO
VO
VCC
8
7
6
5
A 0.1μF bypass capcitor must be
connected between pin 8 and 5 (See Note 5).
Start of commercial production
1990-11
TLP250
2 2019-06-17© 2019
Toshiba Electronic Devices & Storage Corporation
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating UnitLED
Forward current IF 20 mA
Forward current derating (Ta ≥ 70°C) ΔIF / ΔTa -0.36 mA / °C
Peak transient forward curent (Note 1) IFPT 1 A
Reverse voltage VR 5 V
Diode power dissipation PD 40 mW
Diode power dissipation derating (Ta≥70°C) △PD /°C -0.72 mW / °C
Junction temperature Tj 125 °C
Detector
“H”peak output current (PW ≤ 2.5μs,f ≤ 15kHz) (Note 2) IOPH -1.5 A
“L”peak output current (PW ≤ 2.5μs,f ≤ 15kHz) (Note 2) IOPL +1.5 A
Output voltage
(Ta ≤ 70°C)
VO
35
V
(Ta ≤ 85°C) 24
Supply voltage
(Ta ≤ 70°C)
VCC
35
V
(Ta ≤ 85°C) 24
Output voltage derating (Ta ≥ 70°C) ΔVO / ΔTa -0.73 V / °C
Supply voltage derating (Ta ≥ 70°C) ΔVCC / ΔTa -0.73 V / °C
Power dissipation PC 800 mW
Power dissipation derating (Ta ≥ 70°C) ΔPC / °C -14.5 mW / °C
Junction temperature Tj 125 °C
Operating frequency (Note 3) f 25 kHz
Operating temperature range Topr -20 to 85 °C
Storage temperature range Tstg -55 to 125 °C
Lead soldering temperature (10 s) Tsol 260 °C
Isolation voltage (AC, 60 s., R.H.≤ 60 %) (Note 4) BVS 2500 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width PW ≤ 1 μs, 300 pps
Note 2: Exporenential wavefom
Note 3: Exporenential wavefom, IOPH ≤ -1.0 A( ≤ 2.5 μs), IOPL ≤ +1.0 A( ≤ 2.5 μs)
Note 4: Device considerd a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted
together.
Recommended Operating Conditions
Characteristic Symbol Min Typ. Max Unit
Input current, on IF(ON) 7 8 10 mA
Input voltage, off VF(OFF) 0 ― 0.8 V
Supply voltage VCC 15 ― 30 V
Peak output current IOPH/IOPL ― ― ±0.5 A
Operating temperature Topr -20 25 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this product,
please confirm specified characteristics shown in this document.
Note : A ceramic capacitor(0.1 μF) should be connected from pin 8 to pin 5 to stabilize the operation of the high gain
linear amplifier. Failure to provide the bypassing may impair the switching proparty. The total lead length
between capacitor and coupler should not exceed 1 cm.
Note : Input signal rise time(fall time)<0.5 μs.
TLP250
3 2019-06-17© 2019
Toshiba Electronic Devices & Storage Corporation
Electrical Characteristics (Ta = -20 to 70°C, unless otherwise specified)
Characteristic Symbol
Test
Cir-
cuit
Test Condition Min Typ.* Max Unit
Input forward voltage VF ― IF = 10 mA, Ta = 25 °C ― 1.6 1.8 V
Temperature coefficient of
forward voltage
ΔVF / ΔTa ― IF = 10 mA ― -2.0 ― mV / °C
Input reverse current IR ― VR = 5 V, Ta = 25 °C ― ― 10 μA
Input capacitance CT ―
V = 0 V, f = 1 MHz ,
Ta = 25 °C
― 45 250 pF
Output current
“H” level IOPH 1
VCC = 30 V
(Note 1)
IF = 10 mA
V8-6 = 4 V
-0.5 -1.5 ―
A
“L” level IOPL 2
IF = 0 mA
V6-5 = 2.5 V
0.5 2 ―
Output voltage
“H” level VOH 3
VCC1 = +15 V, VEE1 = -15 V
RL = 200 Ω, IF = 5 mA
11 12.8 ―
V
“L” level VOL 4
VCC1 = +15 V, VEE1 = -15 V
RL = 200 Ω, VF = 0.8 V
― -14.2 -12.5
Supply current
“H” level ICCH ―
VCC = 30 V, IF = 10mA
Ta = 25 °C
― 7 ―
mA
VCC = 30 V, IF = 10 mA ― ― 11
“L” level ICCL ―
VCC = 30 V, IF = 0 mA
Ta = 25 °C
― 7.5 ―
VCC = 30 V, IF = 0 mA ― ― 11
Threshold input
current
“Output
L→H” IFLH ―
VCC1 = +15 V, VEE1 = -15 V
RL = 200 Ω, VO > 0 V
― 1.2 5 mA
Threshold input
voltage
“Output
H→L” VFHL ―
VCC1 = +15 V, VEE1 = -15 V
RL = 200 Ω, VO < 0 V
0.8 ― ― V
Supply voltage VCC ― - 10 ― 35 V
Capacitance
(input-output)
CS ―
VS = 0 V, f = 1 MHz
Ta = 25 °C
― 1.0 2.0 pF
Resistance(input-output) RS ―
VS = 500 V , Ta = 25 °C
R.H.≤ 60 %
1×1012
1014
― Ω
* All typical values are at Ta = 25°C
Note 1: Duration of IO time ≤ 50μs
TLP250
4 2019-06-17© 2019
Toshiba Electronic Devices & Storage Corporation
Switching Characteristics (Ta = -20 to 70°C, unless otherwise specified)
Characteristic Symbol
Test
Cir-
cuit
Test Condition Min Typ. Max Unit
Propagation
delay time
L→H tpLH
5
IF = 8 mA
VCC1 = +15 V, VEE1 = -15 V
RL = 200 Ω
― 0.15 0.5
μs
H→L tpHL ― 0.15 0.5
Common mode transient
immunity at high level
output
CMH
6
VCM = 600 V, IF = 8 mA
VCC = 30 V, Ta = 25 °C
-5000 ― ― V / μs
Common mode transient
immunity at low level
output
CML
VCM = 600 V, IF = 0 mA
VCC = 30 V, Ta = 25 °C
5000 ― ― V / μs
Note: All typical values are at Ta = 25°C
Test Circuit 1 : IOPH Test Circuit 2 : IOPL
Test Circuit 3 : VOH Test Circuit 4 : VOL
8
1
4
VCC1
0.1μF
VOL
VF
RL
VEE1
V
8
1
4
VCC
0.1μF
IOPL
A
V6-5
8
1
4
VCC1
0.1μF
VOHV
IF
RL
VEE1
8
1
4
VCC
0.1μF
IOPH
V8-6IF
A
TLP250
5 2019-06-17© 2019
Toshiba Electronic Devices & Storage Corporation
Test Circuit 5: tpLH, tpHL, tr tf
Test Circuit 6: CMH, CML
CML(CMH) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output voltage
in the low (high) state.
VEE1
VCC1
VO
RL
0.1μF
8
IF
100Ω
VO
IF
VO
VOH
GND
VOL
80%
80%
tpLH tpHL
tr
tf
VCM
90%
VO
600V
CMH
CHL
10%
tr tf
26V
3V
SW: A(IF=8mA)
SW: B(IF=0)
0.1μF
8
VCC
VO
1
4
VCM
+ -
A B
SW IF
CML =
CMH =
480 (V)
tr (μs)
tf (μs)
480 (V)
TLP250
6 2019-06-17© 2019
Toshiba Electronic Devices & Storage Corporation
IF – VF
Forward voltage VF (V)
ForwardcurrentIF(mA)
100
1.0
50
30
10
5
3
1
0.5
0.3
0.1
0.05
0.03
0.01
1.2 1.4 1.6 1.8 2.0
Ta = 25 °C
IF – Ta
Ambient temperature Ta (°C)
Allowableforwardcurrent
IF(mA)
40
0
0 10020 40 60 80
10
20
30
VCC – Ta
Ambient temperature Ta (°C)
AllowablesupplyvoltageVCC(V)
40
0
0 10020 40 60 80
10
20
30
IOPH, IOPL – Ta
Ambient Temperature Ta (°C)
Allowablepeakoutputcurrent
IOPH,IOPL(A)
0
0 10020 40 60 80
1
2
PW ≤ 2.5 μs, f ≤ 15 KHz
ΔVF / ΔTa – IF
Forward current IF (mA)
Forwardvoltagetemperature
coefficientΔVF/ΔTa(mV/°C)
-1.4
0.1 0.3 0.5 1 3 5 10 30
-1.6
-1.8
-2.0
-2.2
-2.4
-2.6
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
TLP250
7 2019-06-17© 2019
Toshiba Electronic Devices & Storage Corporation
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”.
Hardware, software and systems described in this document are collectively referred to as “Product”.
• TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, lifesaving and/or life supporting medical
equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to
control combustions or explosions, safety devices, elevators and escalators, and devices related to power plant. IF YOU USE
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your
TOSHIBA sales representative or contact us via our website.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or
vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of
Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled
substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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Original Opto TLP250 P250 DIP-8 New Toshiba

  • 1.
    TLP250 1 2019-06-17© 2019 ToshibaElectronic Devices & Storage Corporation TOSHIBA Photocoupler IRED & Photo-IC TLP250 Industrial Inverter Inverter For Air Conditioner IGBT Gate Drive Power MOS FET Gate Drive The TOSHIBA TLP250 consists of an infrared emitting diode and a integrated photodetector. This unit is 8-lead DIP package. TLP250 is suitable for gate driving circuit of IGBT or power MOS FET. • Input threshold current: 5mA(max) • Supply current : 11mA(max) • Supply voltage : 10-35V • Output current : ±1.5A (max) • Switching time tpLH/tpHL): 0.5μs(max) • Isolation voltage: 2500Vrms(min) • UL-recognized: UL 1577, File No.E67349 • cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 • VDE-Approved: EN 60747-5- 5 (Note 1) Note 1: When a VDE approved type is needed, please designate the Option(D4). Truth Table Tr1 Tr2 Input LED On On Off Off Off On Unit: mm TOSHIBA 11-10C4S Weight: 0.54 g (typ.) Pin Configuration (top view) 8 7 6 5 1 : N.C. 2 : Anode 3 : Cathode 4 : N.C. 1 2 3 4 5 : GND 6 : VO (Output) 7 : VO 8 : VCC Schmatic 2+ VF IF 3- ICC (Tr 1) VO GND (Tr 2) IO VO VCC 8 7 6 5 A 0.1μF bypass capcitor must be connected between pin 8 and 5 (See Note 5). Start of commercial production 1990-11
  • 2.
    TLP250 2 2019-06-17© 2019 ToshibaElectronic Devices & Storage Corporation Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating UnitLED Forward current IF 20 mA Forward current derating (Ta ≥ 70°C) ΔIF / ΔTa -0.36 mA / °C Peak transient forward curent (Note 1) IFPT 1 A Reverse voltage VR 5 V Diode power dissipation PD 40 mW Diode power dissipation derating (Ta≥70°C) △PD /°C -0.72 mW / °C Junction temperature Tj 125 °C Detector “H”peak output current (PW ≤ 2.5μs,f ≤ 15kHz) (Note 2) IOPH -1.5 A “L”peak output current (PW ≤ 2.5μs,f ≤ 15kHz) (Note 2) IOPL +1.5 A Output voltage (Ta ≤ 70°C) VO 35 V (Ta ≤ 85°C) 24 Supply voltage (Ta ≤ 70°C) VCC 35 V (Ta ≤ 85°C) 24 Output voltage derating (Ta ≥ 70°C) ΔVO / ΔTa -0.73 V / °C Supply voltage derating (Ta ≥ 70°C) ΔVCC / ΔTa -0.73 V / °C Power dissipation PC 800 mW Power dissipation derating (Ta ≥ 70°C) ΔPC / °C -14.5 mW / °C Junction temperature Tj 125 °C Operating frequency (Note 3) f 25 kHz Operating temperature range Topr -20 to 85 °C Storage temperature range Tstg -55 to 125 °C Lead soldering temperature (10 s) Tsol 260 °C Isolation voltage (AC, 60 s., R.H.≤ 60 %) (Note 4) BVS 2500 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width PW ≤ 1 μs, 300 pps Note 2: Exporenential wavefom Note 3: Exporenential wavefom, IOPH ≤ -1.0 A( ≤ 2.5 μs), IOPL ≤ +1.0 A( ≤ 2.5 μs) Note 4: Device considerd a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Input current, on IF(ON) 7 8 10 mA Input voltage, off VF(OFF) 0 ― 0.8 V Supply voltage VCC 15 ― 30 V Peak output current IOPH/IOPL ― ― ±0.5 A Operating temperature Topr -20 25 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Note : A ceramic capacitor(0.1 μF) should be connected from pin 8 to pin 5 to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching proparty. The total lead length between capacitor and coupler should not exceed 1 cm. Note : Input signal rise time(fall time)<0.5 μs.
  • 3.
    TLP250 3 2019-06-17© 2019 ToshibaElectronic Devices & Storage Corporation Electrical Characteristics (Ta = -20 to 70°C, unless otherwise specified) Characteristic Symbol Test Cir- cuit Test Condition Min Typ.* Max Unit Input forward voltage VF ― IF = 10 mA, Ta = 25 °C ― 1.6 1.8 V Temperature coefficient of forward voltage ΔVF / ΔTa ― IF = 10 mA ― -2.0 ― mV / °C Input reverse current IR ― VR = 5 V, Ta = 25 °C ― ― 10 μA Input capacitance CT ― V = 0 V, f = 1 MHz , Ta = 25 °C ― 45 250 pF Output current “H” level IOPH 1 VCC = 30 V (Note 1) IF = 10 mA V8-6 = 4 V -0.5 -1.5 ― A “L” level IOPL 2 IF = 0 mA V6-5 = 2.5 V 0.5 2 ― Output voltage “H” level VOH 3 VCC1 = +15 V, VEE1 = -15 V RL = 200 Ω, IF = 5 mA 11 12.8 ― V “L” level VOL 4 VCC1 = +15 V, VEE1 = -15 V RL = 200 Ω, VF = 0.8 V ― -14.2 -12.5 Supply current “H” level ICCH ― VCC = 30 V, IF = 10mA Ta = 25 °C ― 7 ― mA VCC = 30 V, IF = 10 mA ― ― 11 “L” level ICCL ― VCC = 30 V, IF = 0 mA Ta = 25 °C ― 7.5 ― VCC = 30 V, IF = 0 mA ― ― 11 Threshold input current “Output L→H” IFLH ― VCC1 = +15 V, VEE1 = -15 V RL = 200 Ω, VO > 0 V ― 1.2 5 mA Threshold input voltage “Output H→L” VFHL ― VCC1 = +15 V, VEE1 = -15 V RL = 200 Ω, VO < 0 V 0.8 ― ― V Supply voltage VCC ― - 10 ― 35 V Capacitance (input-output) CS ― VS = 0 V, f = 1 MHz Ta = 25 °C ― 1.0 2.0 pF Resistance(input-output) RS ― VS = 500 V , Ta = 25 °C R.H.≤ 60 % 1×1012 1014 ― Ω * All typical values are at Ta = 25°C Note 1: Duration of IO time ≤ 50μs
  • 4.
    TLP250 4 2019-06-17© 2019 ToshibaElectronic Devices & Storage Corporation Switching Characteristics (Ta = -20 to 70°C, unless otherwise specified) Characteristic Symbol Test Cir- cuit Test Condition Min Typ. Max Unit Propagation delay time L→H tpLH 5 IF = 8 mA VCC1 = +15 V, VEE1 = -15 V RL = 200 Ω ― 0.15 0.5 μs H→L tpHL ― 0.15 0.5 Common mode transient immunity at high level output CMH 6 VCM = 600 V, IF = 8 mA VCC = 30 V, Ta = 25 °C -5000 ― ― V / μs Common mode transient immunity at low level output CML VCM = 600 V, IF = 0 mA VCC = 30 V, Ta = 25 °C 5000 ― ― V / μs Note: All typical values are at Ta = 25°C Test Circuit 1 : IOPH Test Circuit 2 : IOPL Test Circuit 3 : VOH Test Circuit 4 : VOL 8 1 4 VCC1 0.1μF VOL VF RL VEE1 V 8 1 4 VCC 0.1μF IOPL A V6-5 8 1 4 VCC1 0.1μF VOHV IF RL VEE1 8 1 4 VCC 0.1μF IOPH V8-6IF A
  • 5.
    TLP250 5 2019-06-17© 2019 ToshibaElectronic Devices & Storage Corporation Test Circuit 5: tpLH, tpHL, tr tf Test Circuit 6: CMH, CML CML(CMH) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output voltage in the low (high) state. VEE1 VCC1 VO RL 0.1μF 8 IF 100Ω VO IF VO VOH GND VOL 80% 80% tpLH tpHL tr tf VCM 90% VO 600V CMH CHL 10% tr tf 26V 3V SW: A(IF=8mA) SW: B(IF=0) 0.1μF 8 VCC VO 1 4 VCM + - A B SW IF CML = CMH = 480 (V) tr (μs) tf (μs) 480 (V)
  • 6.
    TLP250 6 2019-06-17© 2019 ToshibaElectronic Devices & Storage Corporation IF – VF Forward voltage VF (V) ForwardcurrentIF(mA) 100 1.0 50 30 10 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 1.2 1.4 1.6 1.8 2.0 Ta = 25 °C IF – Ta Ambient temperature Ta (°C) Allowableforwardcurrent IF(mA) 40 0 0 10020 40 60 80 10 20 30 VCC – Ta Ambient temperature Ta (°C) AllowablesupplyvoltageVCC(V) 40 0 0 10020 40 60 80 10 20 30 IOPH, IOPL – Ta Ambient Temperature Ta (°C) Allowablepeakoutputcurrent IOPH,IOPL(A) 0 0 10020 40 60 80 1 2 PW ≤ 2.5 μs, f ≤ 15 KHz ΔVF / ΔTa – IF Forward current IF (mA) Forwardvoltagetemperature coefficientΔVF/ΔTa(mV/°C) -1.4 0.1 0.3 0.5 1 3 5 10 30 -1.6 -1.8 -2.0 -2.2 -2.4 -2.6 NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.
  • 7.
    TLP250 7 2019-06-17© 2019 ToshibaElectronic Devices & Storage Corporation RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”. • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. • PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, lifesaving and/or life supporting medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, and devices related to power plant. IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your TOSHIBA sales representative or contact us via our website. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. • GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product. • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. https://toshiba.semicon-storage.com/