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special Diode Theory detail theory new 1.ppt
- 1. Semiconductor Diodes Introduction Diodes Electrical Properties of Solids Semiconductors pn Junctions Semiconductor Diodes Special-Purpose Diodes Diode Circuits
- 2. Diodes An idealdiode passing electricity in one direction but not the other
- 3. Electrical Properties ofSolids Conductors – e.g. copper or aluminium – have a cloud of free electrons (at all temperatures above absolute zero). If an electric field is applied electrons will flow causing an electric current Insulators – e.g. polythene – electrons are tightly bound to atoms so few can break free to conduct electricity
- 4. Semiconductors – e.g.silicon or germanium – at very low temperatures these have the properties of insulators – as the material warms up some electrons break free and can move about, and it takes on the properties of a conductor - albeit a poor one – however, semiconductors have several properties that make them distinct from conductors and insulators
- 5. Semiconductors Pure semiconductors –thermal vibration results in some bonds being broken generating free electrons which move about – these leave behind holes which accept electrons from adjacent atoms and therefore also move about – electrons are negative charge carriers – holes are positive charge carriers At room temperatures there are few charge carriers – pure semiconductors are poor conductors – this is intrinsic conduction
- 6. Doping – theaddition of small amounts of impurities drastically affects its properties – some materials form an excess of electrons and produce an n-type semiconductor – some materials form an excess of holes and produce a p-type semiconductor – both n-type and p-type materials have much greater conductivity than pure semiconductors – this is extrinsic conduction
- 7. The dominantcharge carriers in a doped semiconductor (e.g. electrons in n-type material) are called majority charge carriers. Other type are minority charge carriers The overall doped material is electrically neutral
- 8. pn Junctions Whenp-type and n-type materials are joined this forms a pn junction – majority charge carriers on each side diffuse across the junction where they combine with (and remove) charge carriers of the opposite polarity – hence around the junction there are few free charge carriers and we have a depletion layer (also called a space-charge layer)
- 9. The diffusionof positive charge in one direction and negative charge in the other produces a charge imbalance – this results in a potential barrier across the junction
- 10. Potential barrier –the barrier opposes the flow of majority charge carriers and only a small number have enough energy to surmount it this generates a small diffusion current – the barrier encourages the flow of minority carriers and any that come close to it will be swept over this generates a small drift current – for an isolated junction these two currents must balance each other and the net current is zero
- 11. Forward bias –if the p-type side is made positive with respect to the n-type side the height of the barrier is reduced – more majority charge carriers have sufficient energy to surmount it – the diffusion current therefore increases while the drift current remains the same – there is thus a net current flow across the junction which increases with the applied voltage
- 12. Reverse bias –if the p-type side is made negative with respect to the n-type side the height of the barrier is increased – the number of majority charge carriers that have sufficient energy to surmount it rapidly decreases – the diffusion current therefore vanishes while the drift current remains the same – thus the only current is a small leakage current caused by the (approximately constant) drift current – the leakage current is usually negligible (a few nA)
- 13. Currents ina pn junction
- 14. Forward andreverse currents – pn junction current is given approximately by – where I is the current, e is the electronic charge, V is the applied voltage, k is Boltzmann’s constant, T is the absolute temperature and (Greek letter eta) is a constant in the range 1 to 2 determined by the junction material – for most purposes we can assume = 1 1 exp ηkT eV I I s
- 15. Thus at roomtemperature e/kT ~ 40 V-1 If V > +0.1 V If V < -0.1 V – IS is the reverse saturation current 1 exp kT eV I I s V I kT eV I I s s 40 exp exp s s I I I 1 0
- 16. Semiconductor Diodes Forwardand reverse currents
- 17. Silicon diodes –generally have a turn-on voltage of about 0.5 V – generally have a conduction voltage of about 0.7 V – have a breakdown voltage that depends on their construction perhaps 75 V for a small-signal diode perhaps 400 V for a power device – have a maximum current that depends on their construction perhaps 100 mA for a small-signal diode perhaps many amps for a power device
- 18. Turn-on andbreakdown voltages for a silicon device
- 19. Special-Purpose Diodes Light-emittingdiodes – discussed earlier when we looked at light actuators
- 20. Zener diodes –uses the relatively constant reverse breakdown voltage to produce a voltage reference – breakdown voltage is called the Zener voltage, VZ – output voltage of circuit shown is equal to VZ despite variations in input voltage V – a resistor is used to limit the current in the diode
- 21. Schottky diodes –formed by the junction between a layer of metal (e.g. aluminium) and a semiconductor – action relies only on majority charge carriers – much faster in operation than a pn junction diode – has a low forward voltage drop of about 0.25 V – used in the design of high-speed logic gates
- 22. Tunnel diodes –high doping levels produce a very thin depletion layer which permits ‘tunnelling’ of charge carriers – results in a characteristic with a negative resistance region – used in high-frequency oscillators, where they can be used to ‘cancel out’ resistance in passive components
- 23. Varactor diodes –a reversed-biased diode has two conducting regions separated by an insulating depletion region – this structure resembles a capacitor – variations in the reverse-bias voltage change the width of the depletion layer and hence the capacitance – this produces a voltage-dependent capacitor – these are used in applications such as automatic tuning circuits
- 24. Diode Circuits Half-waverectifier – peak output voltage is equal to the peak input voltage minus the conduction voltage of the diode – reservoir capacitor used to produce a steadier output
- 25. Full-wave rectifier –use of a diode bridge reduces the time for which the capacitor has to maintain the output voltage and thus reduced the ripple voltage
- 26. Signal rectifier –used to demodulate full amplitude modulated signals (full-AM) – also known as an envelope detector – found in a wide range of radio receivers from crystal sets to superheterodynes
- 27. Signal clamping –a simple form of signal conditioning – circuits limit the excursion of the voltage waveform – can use a combination of signal and Zener diodes
- 28. Catch diode –used when switching inductive loads – the large back e.m.f. can cause problems such as arcing in switches – catch diodes provide a low impedance path across the inductor to dissipate the stored energy – the applied voltage reverse-biases the diode which therefore has no effect – when the voltage is removed the back e.m.f. forward biases the diode which then conducts
- 29. Key Points Diodesallow current to flow in only one direction At low temperatures semiconductors act like insulators At higher temperatures they begin to conduct Doping of semiconductors leads to the production of p-type and n-type materials A junction between p-type and n-type semiconductors has the properties of a diode Silicon semiconductor diodes approximate the behaviour of ideal diodes but have a conduction voltage of about 0.7 V There are also a wide range of special purpose diodes Diodes are used in a range of applications