SPICE MODEL of SSM3J314T (Standard+BDS Model) in SPICE PARK
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The document provides a comprehensive device modeling report for the SSM3J314T power MOSFET by Toshiba, detailing key model parameters and circuit configurations. It includes simulation results comparing measured and simulated values for transconductance, gate charge, capacitance, and other electrical characteristics. Additionally, it features performance graphs and provides insight into the device's specifications and ESD protection capabilities.
SPICE MODEL of SSM3J314T (Standard+BDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Model Parameter) PART NUMBER: SSM3J314T MANUFACTURER: TOSHIBA Body Diode (Model Parameter) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 2. Circuit Configuration MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 3. Transconductance Characteristic Circuit Simulation Result Comparison table gfs -Id(A) Error(%) Measurement Simulation 0.100 1.330 1.299 -2.331 0.200 1.880 1.852 -1.489 0.500 2.910 2.907 -0.103 1.000 4.100 4.065 -0.854 2.000 5.650 5.634 -0.283 5.000 8.800 8.636 -1.864 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 4. Vgs-Id Characteristic Circuit Simulation result -10A -100mA 0V -1.0V -2.0V -3.0V -4.0V I(V3) V_V1 Evaluation circuit V3 0Vdc U1 SSM3J314T V2 -5 V1 -3 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 5. Comparison Graph Circuit Simulation Result Simulation Result -VGS(V) -ID(A) Error (%) Measurement Simulation 0.100 1.950 2.023 3.744 0.200 2.050 2.086 1.756 0.500 2.200 2.209 0.409 1.000 2.330 2.351 -0.901 2.000 2.540 2.546 -0.236 5.000 2.900 2.958 -2.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 6. Rds(on) Characteristic Circuit Simulation result -2.0A -1.0A 0A 0V -50mV -100mV -150mV I(VD_Sense) V_VDS Evaluation circuit VD_Sense 0Vdc U1 SSM3J314T VDS 10Vdc VGS -10Vdc 0 Simulation Result ID=-2A, VGS=-10V Measurement Simulation Error (%) R DS (on) () 0.038 0.038 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 7. Gate Charge Characteristic Circuit Simulation result -10V -8V -6V -4V -2V 0V 0 3n 6n 9n 12n 15n V(W1:4) Time*1mA Evaluation circuit U1 ION = 0uA SSM3J314T IOFF = 1mA W - + W1 D2 I2 I1 = 0 I1 Dbreak 2 I2 = 1m TD = 0 TR = 10n V1 TF = 10n PW = 600u PER = 1000u -15 0 Simulation Result VDD=-15V,ID=-3.5A Measurement Simulation Error (%) ,VGS=-10V Qgs(nc) 1.800 1.789 -0.611 Qgd(nc) 2.600 2.603 0.115 Qg(nc) 11.300 11.597 2.628 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 8. Capacitance Characteristic Simulation Result Cbd(pF) -VDS(V) Error(%) Measurement Simulation 0.100 120.000 121.000 0.833 0.200 110.000 110.500 0.455 0.500 92.000 92.000 0.000 1.000 75.000 75.500 0.667 2.000 58.000 58.250 0.431 5.000 40.000 40.025 0.062 10.000 30.000 30.000 0.000 20.000 22.000 22.050 0.227 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 9. Switching Time Characteristic Circuit Simulation result -19.7V -15.0V -10.0V -5.0V 0V 1.8us 1.9us 2.0us 2.1us 2.2us 2.3us V(L1:2)*3.75 V(R2:2) Time Evaluation circuit R2 L2 15 50nH U1 R3 L1 SSM3J314T PER = 200u PW = 10u 30nH V1 TF = 1n 10 -15Vdc TR = 1n R1 TD = 2u V2 = 8 V2 10 V1 = 0 0 Simulation Result ID=-1A, VDD=-15V Measurement Simulation Error(%) VGS=-4V Ton(ns) 20.000 20.147 0.735 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 10. Output Characteristic Circuit Simulation result -10V -5V -4.0 V -7.0A -6.0A -3V -5.0A -4.0A -3.0A -2.0A VGS=-2.5V -1.0A 0A 0V -0.2V -0.4V -0.6V -0.8V -1.0V I(V3) V_V2 Evaluation circuit V3 0Vdc U1 SSM3J314T V2 V1 -5 -2.5 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 11. BODY DIODE SPICE MODEL Forward Current Characteristic Circuit Simulation Result 10A 1.0A 100mA 10mA 1.0mA 0V 0.4V 0.8V 1.2V I(VD_Sense) V_VDS Evaluation Circuit VD_Sense 0Vdc U1 SSM3J314T VDS 10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 12. Comparison Graph Circuit Simulation Result Simulation Result VDS(V) VDS(V) IDR(A) %Error Measurement Simulation 0.001 0.550 0.552 0.364 0.002 0.570 0.567 -0.526 0.005 0.588 0.587 -0.170 0.010 0.602 0.603 0.166 0.020 0.620 0.619 -0.161 0.050 0.640 0.641 0.156 0.100 0.660 0.66 0.000 0.200 0.685 0.682 -0.438 0.500 0.720 0.719 -0.139 1.000 0.750 0.753 0.400 2.000 0.795 0.795 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 13. Reverse Recovery Characteristic Circuit Simulation Result 400mA 200mA 0A -200mA -400mA 0.84us 0.92us 1.00us 1.08us 1.16us 1.24us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4v V1 U1 V2 = 10.7v SSM3J314T TD = 2n TR = 1ns TF = 10ns PW = 1us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) Trj(ns) 9.600 9.580 -0.208 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 14. Reverse Recovery Characteristic Reference Trj= 9.6 (ns) Trb= 13.6 (ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 15. ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc U1 SSM3J314T R2 100MEG 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008